JPH05102121A - Method and apparatus for cleaning of sheet type - Google Patents
Method and apparatus for cleaning of sheet typeInfo
- Publication number
- JPH05102121A JPH05102121A JP32360391A JP32360391A JPH05102121A JP H05102121 A JPH05102121 A JP H05102121A JP 32360391 A JP32360391 A JP 32360391A JP 32360391 A JP32360391 A JP 32360391A JP H05102121 A JPH05102121 A JP H05102121A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- wafer
- substrate
- tank
- cleanser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板や液晶ガラ
ス基板等の薄板状の基板を、洗浄液を用いて一枚づつ洗
浄する枚葉式洗浄方法および装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer cleaning method and apparatus for cleaning thin substrates such as semiconductor substrates and liquid crystal glass substrates one by one using a cleaning liquid.
【０００２】[0002]
【従来の技術】半導体装置もサブミクロン時代を迎える
と共に半導体基板（以下、ウエハと称する）の直径が現
在では、１５０ｍｍ〜２００ｍｍのものが主流となり、
大口径化が進んでいる。従って、一枚のウエハに対する
清浄度の向上が要求されてきている。このため従来の方
法において、複数枚のウエハを収載したキャリアを洗浄
液に投入して、複数枚のウエハを同時に洗浄する方法か
ら、図５〜図７に示す様なウエハを一枚づつ洗浄する、
いわゆる枚葉式洗浄方法に移行してきた。すなわち、洗
浄液を収容した石英ガラス等から成る洗浄槽１内に、図
示しないチャッキングアームでウエハ３を浸漬し、洗浄
槽１内に形成され、各々ウエハ３の厚みよりやや幅広の
溝を有するウエハ保持部４に載置して保持し、循環ポン
プ５によって洗浄液を循環させると、洗浄液が洗浄液供
給口７の多数の流出口７ａから洗浄槽１内に流出する。
洗浄液が充満した洗浄槽１にさらに洗浄液が流入するこ
とにより、余った洗浄液が洗浄槽１の上部開口に設けら
れた４つの堰１ａ、１ｂ，１ｃ，１ｄを乗り越えオーバ
ーフローし、オーバーフロー部２に流れ込む。この時洗
浄槽１内に洗浄液の上昇流を生じ、ウエハ表面３ａとウ
エハ裏面３ｂに付着した汚染物質を剥離して、オーバー
フローする洗浄液と共に持ち去り、ろ過フィルタ６を通
して洗浄液中の汚染物質を除去し洗浄液のみが再び洗浄
槽１に戻る。上記のように処理時間洗浄液を循環させる
ことにより、ウエハ３が清浄化される。2. Description of the Related Art With the advent of the submicron era of semiconductor devices, semiconductor substrates (hereinafter referred to as "wafers") having diameters of 150 mm to 200 mm have become mainstream.
Larger diameter is in progress. Therefore, improvement of cleanliness for one wafer has been demanded. Therefore, in the conventional method, a carrier containing a plurality of wafers is put into a cleaning liquid to simultaneously clean a plurality of wafers, and then the wafers as shown in FIGS. 5 to 7 are cleaned one by one.
A so-called single-wafer cleaning method has been used. That is, a wafer 3 is immersed in a cleaning tank 1 made of quartz glass or the like containing a cleaning liquid with a chucking arm (not shown) to be formed in the cleaning tank 1, and each wafer has a groove slightly wider than the thickness of the wafer 3. When the cleaning liquid is circulated by the circulation pump 5 while being placed on the holding portion 4 and held, the cleaning liquid flows out into the cleaning tank 1 from the multiple outlets 7 a of the cleaning liquid supply port 7.
When the cleaning liquid further flows into the cleaning tank 1 filled with the cleaning liquid, the excess cleaning liquid overflows the four weirs 1a, 1b, 1c, 1d provided at the upper opening of the cleaning tank 1 and overflows, and flows into the overflow portion 2. . At this time, an upward flow of the cleaning liquid is generated in the cleaning tank 1, and the contaminants adhering to the front surface 3a of the wafer and the rear surface 3b of the wafer are peeled off and carried away together with the overflowing cleaning liquid, and the contaminants in the cleaning liquid are removed through the filtration filter 6. Only the cleaning liquid returns to the cleaning tank 1. The wafer 3 is cleaned by circulating the cleaning liquid for the processing time as described above.
【０００３】上記において洗浄槽は１基のみ用いて説明
したが、実際にはスループット（生産高）を上げる為、
数基を連設して使用される。例えば３基の洗浄槽を用い
て拡散前洗浄をする場合、第１の洗浄槽には希フッ酸を
収容し、第２の洗浄槽には純水を収容し、第３の洗浄槽
には過酸化水素水を収容して、ウエハをチャッキングア
ームで第１の洗浄槽から第３の洗浄槽まで順番に投入し
洗浄する。In the above description, only one cleaning tank is used. However, in order to increase the throughput (production amount),
Several units are used in series. For example, when performing pre-diffusion cleaning using three cleaning tanks, the first cleaning tank contains dilute hydrofluoric acid, the second cleaning tank contains pure water, and the third cleaning tank contains The wafer is filled with hydrogen peroxide water, and the wafer is sequentially charged by the chucking arm from the first cleaning tank to the third cleaning tank for cleaning.
【０００４】[0004]
【発明が解決しようとする課題】ウエハの裏面は各プロ
セス装置内で、搬送ベルトや真空チャック等との接触が
多いため汚染が著しく、従来の方法では以下に示す問題
点があった。すなわち、図８（図５の洗浄槽の一部を拡
大示した図）を参照して、ウエハ３を洗浄中ウエハ裏面
３ｂより剥離した汚染物質８が４方向オーバーフローだ
と、洗浄槽上部からオーバーフローしきれずに、一部が
ウエハ表面３ａ側に回り込み、槽内壁面を逆流し、ウエ
ハ表面３ａに再付着し汚染してしまうという問題点があ
った。Since the back surface of the wafer is frequently contacted with a conveyor belt, a vacuum chuck or the like in each process apparatus, the contamination is remarkable, and the conventional method has the following problems. That is, referring to FIG. 8 (an enlarged view of a part of the cleaning tank in FIG. 5), when the contaminant 8 peeled off from the wafer back surface 3b during cleaning of the wafer 3 overflows in four directions, it overflows from the upper portion of the cleaning tank. There is a problem that a part of the material does not flow to the side of the wafer surface 3a and flows back on the inner wall surface of the tank, and reattaches to the surface 3a of the wafer to contaminate it.
【０００５】それゆえに、本発明は洗浄液により洗浄さ
れたウエハ等の基板表面が、洗浄中に再び汚染されるこ
とのない改良された枚葉式洗浄方法および装置を提供す
ることにある。Therefore, it is an object of the present invention to provide an improved single-wafer cleaning method and apparatus in which the surface of a substrate such as a wafer cleaned by a cleaning liquid is not contaminated again during cleaning.
【０００６】[0006]
【課題を解決するための手段】本発明は上記の目的を達
成するため、洗浄液を収容した洗浄槽内に、被洗浄物で
ある一枚の基板を垂直に保持し、洗浄槽内底部に洗浄液
を供給すると共に、洗浄槽上部よりオーバーフローさせ
て上昇流を形成し、基板を洗浄する枚葉式洗浄方法にお
いて、基板の一面側のみからオーバーフローさせるよう
にしたものである。In order to achieve the above object, the present invention holds a single substrate, which is an object to be cleaned, vertically in a cleaning tank containing a cleaning solution, and the cleaning solution is provided at the bottom of the cleaning tank. In the single-wafer cleaning method of cleaning the substrate, the overflow is made from the upper part of the cleaning tank to form an ascending flow, and the overflow is caused only from one surface side of the substrate.
【０００７】また、洗浄液を収容した洗浄槽内に、一枚
の基板を垂直に保持し、洗浄槽内底部に洗浄液を供給す
ると共に、洗浄槽上部よりオーバーフローさせて上昇流
を形成し、基板を洗浄するようにした枚葉式洗浄装置に
おいて、前記洗浄槽を基板の一面側のみより洗浄液をオ
ーバーフローさせる構造にしたものである。Further, one substrate is held vertically in the cleaning tank containing the cleaning liquid, the cleaning liquid is supplied to the bottom of the cleaning tank, and an upward flow is formed by overflowing from the upper portion of the cleaning tank to remove the substrate. In the single-wafer cleaning apparatus for cleaning, the cleaning tank has a structure in which the cleaning liquid overflows from only one surface side of the substrate.
【０００８】[0008]
【作用】本発明によれば、上記したように、オーバーフ
ローを基板の一面側のみからさせるようにしたことによ
り、洗浄中に汚染度の高い基板裏面から剥離した汚染物
質が、基板表面に再付着することがなく基板を清浄にす
ることができる。According to the present invention, as described above, the overflow is caused only from the one surface side of the substrate, so that the contaminants peeled from the back surface of the substrate, which is highly contaminated during cleaning, are reattached to the substrate surface. The substrate can be cleaned without doing so.
【０００９】[0009]
【実施例】本発明を、従来例と同様ウエハの洗浄に適用
した実施例を図面により説明する。図１は本発明にかか
る枚葉式洗浄装置の構成図、図２は図１の左側面図、図
３は図２の平面図であり、従来例を示す図５〜図７と同
じ部分には同一番号を付して説明を省略する。従来例と
の違いは、洗浄液のオーバーフローのやり方を４方向か
ら１方向に変えた点にある。すなわち、洗浄槽１の上部
開口の１辺のみに洗浄液をオーバーフローさせる堰１ａ
と、溢れた洗浄液を一時貯留するオーバーフロー部２を
設けるように構成した。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to cleaning a wafer as in the conventional example will be described with reference to the drawings. 1 is a block diagram of a single-wafer cleaning apparatus according to the present invention, FIG. 2 is a left side view of FIG. 1, and FIG. 3 is a plan view of FIG. Are assigned the same numbers and explanations thereof are omitted. The difference from the conventional example is that the method of overflow of the cleaning liquid is changed from four directions to one direction. That is, the weir 1a that overflows the cleaning liquid only on one side of the upper opening of the cleaning tank 1.
Then, the overflow section 2 for temporarily storing the overflowed cleaning liquid is provided.
【００１０】次に、上記実施例の装置を用いた洗浄方法
について説明すると、洗浄液の収容された洗浄槽１に、
図示しないチャッキングアームによりウエハ３を浸漬
し、ウエハ裏面３ｂをオーバーフロー部２側に向けてウ
エハ保持部４に載置し、循環ポンプ５を作動させて洗浄
液を循環させると、洗浄液はろ過フィルタ６を通り洗浄
液供給口７の流出口７ａから洗浄槽１内に流出する。洗
浄液が充満した洗浄槽１にさらに洗浄液が流入すること
により、余った洗浄液が洗浄槽１の堰１ａを乗り越えオ
ーバーフローし、オーバーフロー部２に流れ込む。この
時洗浄槽１内に洗浄液の上昇流を生じ、ウエハ表面３ａ
と裏面３ｂに付着した汚染物質を剥離してオーバーフロ
ーする洗浄液と共に持ち去り、ろ過フィルタ６を通して
洗浄液中の汚染物質を除去し、洗浄液のみが再び洗浄槽
１に戻る。上記のように処理時間洗浄液を循環させるこ
とによりウエハ３が清浄化される。なお上記実施例にお
いては、ウエハ３を図示しないチャッキングアームから
ウエハ保持部４に移載しているが、洗浄槽１にウエハ保
持部４を設けず、図示しないチャッキングアームで保持
したままの状態で洗浄するようにしても良い。Next, a cleaning method using the apparatus of the above-mentioned embodiment will be described. In the cleaning tank 1 containing the cleaning liquid,
When the wafer 3 is dipped by a chucking arm (not shown), the back surface 3b of the wafer is placed on the wafer holder 4 with the overflow portion 2 side facing, and the circulation pump 5 is operated to circulate the cleaning liquid. Through the outlet 7a of the cleaning liquid supply port 7 into the cleaning tank 1. When the cleaning liquid further flows into the cleaning tank 1 filled with the cleaning liquid, the excess cleaning liquid flows over the weir 1a of the cleaning tank 1 and overflows, and flows into the overflow portion 2. At this time, an upward flow of the cleaning liquid is generated in the cleaning tank 1 and the wafer surface 3a
Then, the contaminants attached to the back surface 3b are peeled off and carried away together with the overflowing cleaning liquid, the contaminants in the cleaning liquid are removed through the filtration filter 6, and only the cleaning liquid returns to the cleaning tank 1. The wafer 3 is cleaned by circulating the cleaning liquid for the processing time as described above. In the above embodiment, the wafer 3 is transferred from the chucking arm (not shown) to the wafer holder 4, but the wafer holder 4 is not provided in the cleaning tank 1 and the wafer 3 is held by the chucking arm (not shown). You may make it wash in a state.
【００１１】次に、上記本発明の洗浄方法によるとウエ
ハの清浄度を高められる理由について、図４（図１の洗
浄槽の一部を拡大示した図）を用いて説明する。洗浄槽
１にはオーバーフロー用の堰１ａと、オーバーフローし
た洗浄液を一時貯留するオーバーフロー部２とが一方向
のみ（この場合ウエハの裏面側のみ）にしか設けてな
く、循環ポンプ５で洗浄液を循環させると、オーバーフ
ローはウエハの裏面３ｂ側のみにしか生じないので、洗
浄槽１の上層部での流れにおいて、ウエハ表面側３ａ側
えの流れはほとんど生じ得ない。 従って、ウエハ裏面
３ｂに付着していた汚染物質８はウエハ表面３ａ側には
逆流せず、ウエハ表面３ａ側に付着していた汚染物質９
と共にウエハ裏面３ｂ側からオーバーフローされ、洗浄
中にウエハ表面３ａに再付着することがなく、高い清浄
度に保つことができる。Next, the reason why the cleanliness of the wafer can be enhanced by the cleaning method of the present invention will be described with reference to FIG. 4 (a diagram showing an enlarged part of the cleaning tank in FIG. 1). The cleaning tank 1 is provided with the weir 1a for overflow and the overflow section 2 for temporarily storing the overflowed cleaning liquid only in one direction (in this case, only the back surface side of the wafer), and the cleaning liquid is circulated by the circulation pump 5. Since the overflow occurs only on the back surface 3b side of the wafer, the flow on the wafer front surface side 3a side can hardly occur in the flow in the upper layer portion of the cleaning tank 1. Therefore, the contaminant 8 adhered to the wafer back surface 3b does not flow back to the wafer front surface 3a side, but the contaminant 9 adhered to the wafer front surface 3a side.
At the same time, it overflows from the wafer back surface 3b side and does not redeposit on the wafer front surface 3a during cleaning, so that a high cleanliness can be maintained.
【００１２】[0012]
【発明の効果】以上詳細に説明したように、本発明の枚
葉式洗浄方法によれば、オーバーフローの過程におい
て、汚染度の高い基板裏面側のみからオーバーフローさ
せたことにより、基板を洗浄中に基板裏面から剥離した
汚染物質が基板表面に再付着することがなく洗い流さ
れ、清浄な状態で次工程に搬送することができ、歩留ま
りを向上させることができる。As described above in detail, according to the single-wafer cleaning method of the present invention, during the overflow process, the overflow is caused only from the back surface side of the substrate, which has a high degree of contamination. The contaminants peeled off from the back surface of the substrate can be washed away without reattaching to the front surface of the substrate, and can be conveyed to the next step in a clean state, so that the yield can be improved.
【００１３】また、本発明の枚葉式洗浄装置によれば、
上記効果に加え、従来の４方向オーバーフローから一方
向オーバーフローに改良したことにより、洗浄槽を薄く
小型に製造でき、連設して使用する場合にはプロセス装
置全体を小さくまとめることができ、半導体工場の省ス
ペース化が計れる。According to the single-wafer cleaning apparatus of the present invention,
In addition to the above effects, by improving the conventional four-way overflow to one-way overflow, the cleaning tank can be manufactured thin and small, and when used in series, the whole process equipment can be made small, and the semiconductor factory The space can be saved.
【図１】本発明の一実施例にかかる枚葉式洗浄装置の構
成図。FIG. 1 is a configuration diagram of a single wafer cleaning apparatus according to an embodiment of the present invention.
【図２】図１の左側面図。FIG. 2 is a left side view of FIG.
【図３】図２の平面図。FIG. 3 is a plan view of FIG.
【図４】本発明によると、ウエハの清浄度を高められる
理由を説明するために、図１に示す洗浄槽の一部を拡大
示した図。FIG. 4 is an enlarged view of a part of the cleaning tank shown in FIG. 1 for explaining the reason why the cleanliness of the wafer can be improved according to the present invention.
【図５】従来例にかかる枚葉式洗浄装置の構成図。FIG. 5 is a configuration diagram of a single-wafer cleaning apparatus according to a conventional example.
【図６】図５の左側面図。6 is a left side view of FIG.
【図７】図６の平面図。FIG. 7 is a plan view of FIG.
【図８】従来の技術の問題点を説明するために、図５に
示す洗浄槽の一部を拡大示した図。FIG. 8 is an enlarged view of a part of the cleaning tank shown in FIG. 5 for explaining the problems of the conventional technique.
１ 洗浄槽 １ａ 堰 ２ オーバーフロー部 ３ ウエハ ３ａ ウエハ表面 ３ｂ ウエハ裏面 ４ ウエハ保持部 ７ 洗浄液供給口 1 Cleaning Tank 1a Weir 2 Overflow Part 3 Wafer 3a Wafer Front Surface 3b Wafer Backside 4 Wafer Holding Part 7 Cleaning Liquid Supply Port
Claims (3)
板を垂直に保持し、洗浄槽内底部に洗浄液を供給すると
共に、洗浄槽上部よりオーバーフローさせて上昇流を形
成し、基板を洗浄する枚葉式洗浄方法において、基板の
一面側のみからオーバーフローさせることを特徴とする
枚葉式洗浄方法。1. A single substrate is vertically held in a cleaning tank containing a cleaning liquid, the cleaning liquid is supplied to the bottom of the cleaning tank, and an upward flow is formed by overflowing the cleaning tank from the upper part of the cleaning tank. In the single-wafer cleaning method for cleaning, the single-wafer cleaning method is characterized in that overflow is caused only from one surface side of the substrate.
バーフローさせることを特徴とする請求項１の枚葉式洗
浄方法。2. The single-wafer cleaning method according to claim 1, wherein the overflow is caused only from one surface side of the substrate having a high degree of contamination.
板を垂直に保持し、洗浄槽内底部に洗浄液を供給すると
共に、洗浄槽上部よりオーバーフローさせて上昇流を形
成し、基板を洗浄するようにした枚葉式洗浄装置におい
て、前記洗浄槽の上部開口の一方向のみにオーバーフロ
ー部を設けて成ることを特徴とする枚葉式洗浄装置。3. A single substrate is held vertically in a cleaning tank containing a cleaning liquid, the cleaning liquid is supplied to the bottom of the cleaning tank, and an upward flow is formed by overflowing the cleaning tank from the upper part of the cleaning tank. A single-wafer cleaning apparatus adapted to be washed, wherein an overflow section is provided only in one direction of an upper opening of the cleaning tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32360391A JPH05102121A (en) | 1991-10-02 | 1991-10-02 | Method and apparatus for cleaning of sheet type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32360391A JPH05102121A (en) | 1991-10-02 | 1991-10-02 | Method and apparatus for cleaning of sheet type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05102121A true JPH05102121A (en) | 1993-04-23 |
Family
ID=18156560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32360391A Pending JPH05102121A (en) | 1991-10-02 | 1991-10-02 | Method and apparatus for cleaning of sheet type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05102121A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6530388B1 (en) * | 2000-02-15 | 2003-03-11 | Quantum Global Technologies, Llc | Volume efficient cleaning systems |
| US6910487B2 (en) * | 2000-06-27 | 2005-06-28 | Imec Vzw | Method and apparatus for liquid-treating and drying a substrate |
| US6926016B1 (en) | 2001-02-15 | 2005-08-09 | Quantum Global Technologies, Llc | System for removing contaminants from semiconductor process equipment |
| US7328712B1 (en) | 2000-02-15 | 2008-02-12 | Quantum Global Technologies | Cleaning bench for removing contaminants from semiconductor process equipment |
-
1991
- 1991-10-02 JP JP32360391A patent/JPH05102121A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6530388B1 (en) * | 2000-02-15 | 2003-03-11 | Quantum Global Technologies, Llc | Volume efficient cleaning systems |
| US6637444B1 (en) | 2000-02-15 | 2003-10-28 | Quantum Global Technologies, Llc | Volume efficient cleaning methods |
| US7328712B1 (en) | 2000-02-15 | 2008-02-12 | Quantum Global Technologies | Cleaning bench for removing contaminants from semiconductor process equipment |
| US7427330B1 (en) | 2000-02-15 | 2008-09-23 | Quantum Global Technologies, Llc | Cleaning bench for removing contaminants from semiconductor process equipment |
| US6910487B2 (en) * | 2000-06-27 | 2005-06-28 | Imec Vzw | Method and apparatus for liquid-treating and drying a substrate |
| US6926016B1 (en) | 2001-02-15 | 2005-08-09 | Quantum Global Technologies, Llc | System for removing contaminants from semiconductor process equipment |
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