JP2005251806A - Method of cleaning substrate for semiconductor and spin cleaning apparatus - Google Patents

Method of cleaning substrate for semiconductor and spin cleaning apparatus Download PDF

Info

Publication number
JP2005251806A
JP2005251806A JP2004056704A JP2004056704A JP2005251806A JP 2005251806 A JP2005251806 A JP 2005251806A JP 2004056704 A JP2004056704 A JP 2004056704A JP 2004056704 A JP2004056704 A JP 2004056704A JP 2005251806 A JP2005251806 A JP 2005251806A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
cleaning liquid
spin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004056704A
Other languages
Japanese (ja)
Other versions
JP4766836B2 (en
Inventor
Atsushi Hida
敦 飛田
Kunihisa Zaitsu
国央 財津
Yusuke Shoji
祐介 庄司
Hiroyuki Ishii
裕之 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2004056704A priority Critical patent/JP4766836B2/en
Publication of JP2005251806A publication Critical patent/JP2005251806A/en
Application granted granted Critical
Publication of JP4766836B2 publication Critical patent/JP4766836B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning method which has a high washing performance using little chemical and has extremely low reattachment of foreign matters, etc. to a substrate in cleaning the substrate to be used for semiconductor manufacturing such as a silicon wafer and a photo mask, and to provide a spin cleaning apparatus. <P>SOLUTION: The cleaning method for the substrate for a semiconductor using the spin cleaning apparatus for cleaning and drying the substrate to be used for semiconductor manufacturing comprises a first process of dropping a small amount of a room temperature cleaning liquid, on the surface of the substrate being rotated at a low speed to expand the cleaning liquid evenly on the surface of the substrate; a second process wherein, while rotating the substrate at a low speed, with the cleaning liquid applied on the surface of the substrate, high temperature superpure water is supplied to the rear face of the substrate, and the substrate and the cleaning liquid are heated at a high temperature and are kept in such a condition for a prescribed period of time to the surface of the substrate; and a third process wherein, after the cleaning treatment for the prescribed period of time, superpure water is supplied to the substrate from above the substrate to wash away the cleaning liquid. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、シリコンウエーハ、フォトマスクなどの半導体製造に使用される基板等を、回転させながら洗浄処理を行うスピン式洗浄方法およびスピン式洗浄装置に関するものである。   The present invention relates to a spin cleaning method and a spin cleaning apparatus that perform cleaning processing while rotating a substrate or the like used for manufacturing a semiconductor such as a silicon wafer or a photomask.

半導体等の製造工程において、シリコンウエーハ、フォトマスクなどの半導体製造に使用される基板に付着した有機物、金属等の塵埃、異物は、製造歩留り低下の最大の原因となる。したがって、塵埃、異物等を取り除く洗浄工程は、半導体等の製造工程の中で最も重要な工程の一つであり、従来、浸漬式洗浄、スピン式洗浄、スクラブ式洗浄、ブラシ式洗浄等の種々の洗浄方法が行なわれている。それらの洗浄方法の中で、半導体製造に使用される基板表面に直接にブラシ等を接触させることがなく、基板を傷つけにくい方法である浸漬式洗浄（例えば、特許文献１参照。）、およびスピン式洗浄（例えば、特許文献２参照。）が最も一般的に行なわれている方法である。   In the manufacturing process of semiconductors and the like, organic substances, dust such as metal, and foreign matters attached to a substrate used for manufacturing semiconductors such as silicon wafers and photomasks are the largest cause of a decrease in manufacturing yield. Therefore, the cleaning process for removing dust, foreign matters, etc. is one of the most important processes in the manufacturing process of semiconductors, etc., and conventionally, there are various methods such as immersion cleaning, spin cleaning, scrub cleaning, brush cleaning, etc. The cleaning method is performed. Among these cleaning methods, immersion cleaning (see, for example, Patent Document 1), which is a method that does not directly damage the substrate without bringing a brush or the like into direct contact with the surface of the substrate used in semiconductor manufacturing, and spin. Type cleaning (see, for example, Patent Document 2) is the most commonly performed method.

従来の半導体基板の洗浄方法の一つである浸漬式洗浄について、図６に示す従来の浸漬式洗浄装置の構成図に基づいて説明する。洗浄処理は通常、硫酸と過酸化水素水の混合液（硫酸過水と称される）の高温溶液、あるいはアンモニア水溶液と過酸化水素水の混合液（アンモニア過水と称される）による洗浄液６１に満たされた洗浄処理槽６２に、被洗浄基板６３を一定時間浸漬することにより行なわれる。浸漬された基板６３の表面の塵埃等の異物は洗浄液６１に溶解し、除去される。洗浄液６１は、ポンプ６４により常時循環し、フィルター６５により濾過されて、一定の清浄度を保つようにしている。
しかしながら、循環濾過のみでは、被洗浄基板６３によって洗浄処理槽６２内に持ちこまれる汚染物質を完全に除去することが困難であり、浸漬式洗浄方法は基板６３洗浄後の再汚染の問題を原理上有している。 Immersion cleaning, which is one of the conventional semiconductor substrate cleaning methods, will be described based on the configuration diagram of a conventional immersion cleaning apparatus shown in FIG. The cleaning treatment is usually performed by a cleaning solution 61 using a high-temperature solution of a mixed solution of sulfuric acid and hydrogen peroxide (referred to as sulfuric acid / hydrogen peroxide) or a mixed solution of aqueous ammonia and hydrogen peroxide (referred to as ammonia / hydrogen peroxide). This is performed by immersing the substrate 63 to be cleaned in the cleaning tank 62 filled with the above. Foreign matter such as dust on the surface of the immersed substrate 63 is dissolved in the cleaning liquid 61 and removed. The cleaning liquid 61 is constantly circulated by a pump 64 and is filtered by a filter 65 so as to maintain a certain degree of cleanliness.
However, it is difficult to completely remove the contaminants brought into the cleaning treatment tank 62 by the substrate 63 to be cleaned only with the circulation filtration, and the immersion cleaning method has a principle of re-contamination after cleaning the substrate 63 in principle. Have.

上記の基板再汚染の問題を改善するために、スピン式の洗浄方法が行なわれている。例えば、図７に従来のスピン式洗浄装置の断面図を示す。図７に示すスピン式の洗浄装置において、被洗浄基板７１は、装置の回転軸７２上に設置された基板保持冶具７３の上に、水平状態で保持される。基板７１は基板中央を軸として回転し、ノズル７４から吹き出した洗浄液７５は回転する基板７１上に吐出され、基板７１上の異物を溶解し、遠心力により、基板７１の外に排出される。この場合、基本的には、洗浄液７５は使い捨てにするため、基板７１の再汚染の問題はない。上記において、洗浄液７５は常温あるいは加温して基板７１上に吐出される。また、基板表面を洗浄中、必要に応じて、基板７１の裏面側を室温の超純水７６で洗浄する。
特開平５−３４３３７９号公報 特開２００２−１９８３４５号公報 In order to improve the above-mentioned problem of substrate recontamination, a spin-type cleaning method is performed. For example, FIG. 7 shows a cross-sectional view of a conventional spin cleaning apparatus. In the spin cleaning apparatus shown in FIG. 7, the substrate 71 to be cleaned is held in a horizontal state on a substrate holding jig 73 installed on a rotation shaft 72 of the apparatus. The substrate 71 rotates about the center of the substrate, and the cleaning liquid 75 blown out from the nozzle 74 is discharged onto the rotating substrate 71, dissolves the foreign matter on the substrate 71, and is discharged out of the substrate 71 by centrifugal force. In this case, since the cleaning liquid 75 is basically disposable, there is no problem of recontamination of the substrate 71. In the above, the cleaning liquid 75 is discharged onto the substrate 71 at room temperature or heated. Further, during the cleaning of the substrate surface, the back surface side of the substrate 71 is cleaned with ultrapure water 76 at room temperature as necessary.
JP-A-5-343379 JP 2002-198345 A

上記の従来の浸漬式洗浄においては、高温、高濃度の強力な洗浄液による長時間処理が可能なため、洗浄能力が高いという利点がある。しかしながら、一方、被洗浄基板によって持ちこまれる汚染が洗浄処理槽内に蓄積され、清浄な基板を汚染するという、再付着の問題が発生する。また、洗浄処理槽及び洗浄液の循環系を洗浄液で満たすために、大量の洗浄液が必要であり、それゆえ、一定量の高温の洗浄液を数日間に渡って使用することとなる。このため、洗浄液の劣化が問題となる。   The above-described conventional immersion cleaning has an advantage of high cleaning capability because it can be processed for a long time with a strong cleaning solution of high temperature and high concentration. However, on the other hand, the contamination brought about by the substrate to be cleaned is accumulated in the cleaning tank, and the problem of reattachment occurs that contaminates a clean substrate. In addition, a large amount of cleaning liquid is required to fill the cleaning tank and the circulation system of the cleaning liquid with the cleaning liquid. Therefore, a certain amount of high-temperature cleaning liquid is used for several days. For this reason, deterioration of the cleaning liquid becomes a problem.

また、従来のスピン式洗浄においては、洗浄処理中は洗浄液を基板表面に供給しつづける必要がある。このため洗浄液を使い捨てにする場合、高温の洗浄液による長時間処理を行うことは実質的に不可能である。また、これを解決するために洗浄液を回収、再利用する方法も行なわれているが、この場合でも、洗浄液を回収時に、洗浄液に溶解したりあるいは洗浄液中に浮遊する塵埃等の異物を完全に洗浄液から分離することは構造的に困難なこともあり、スピン式洗浄の利点が失われ、浸漬式洗浄同様の洗浄液の劣化や、洗浄液の汚染による再付着の問題が発生する。   Further, in the conventional spin cleaning, it is necessary to continue supplying the cleaning liquid to the substrate surface during the cleaning process. For this reason, when the cleaning liquid is made disposable, it is practically impossible to perform the treatment for a long time with the hot cleaning liquid. In order to solve this problem, there is a method of collecting and reusing the cleaning solution, but even in this case, when collecting the cleaning solution, it is possible to completely remove foreign matters such as dust dissolved in the cleaning solution or floating in the cleaning solution. Separation from the cleaning liquid may be structurally difficult, and the advantages of the spin cleaning are lost, resulting in the deterioration of the cleaning liquid similar to the immersion cleaning and the problem of redeposition due to contamination of the cleaning liquid.

本発明は上記のような問題点を解決するためのものであり、シリコンウェーハやフォトマスク等の半導体製造に使用される基板を洗浄するに際し、少量の洗浄液で高い洗浄能力を持ち、異物等の基板への再付着が極めて少ない洗浄方法、およびスピン式洗浄装置を提供するものである。   The present invention is for solving the above-mentioned problems, and has a high cleaning ability with a small amount of cleaning liquid when cleaning a substrate used for manufacturing a semiconductor such as a silicon wafer or a photomask. It is an object of the present invention to provide a cleaning method and a spin type cleaning apparatus with very little reattachment to a substrate.

本発明の半導体用基板の洗浄方法は、半導体製造に使用される基板を洗浄、乾燥するスピン式の洗浄装置を用いた半導体用基板の洗浄方法において、低速回転する前記基板の表面上に常温の洗浄液を少量滴下し、前記基板表面に均一に広げる第一の工程と、前記洗浄液を前記基板表面に盛った状態にて低速回転する一方、前記基板裏面に高温の超純水を供給し、前記基板及び前記洗浄液を高温に加熱しながら一定時間保持して前記基板表面を洗浄処理する第二の工程と、一定時間の洗浄処理後、前記基板の上方から純水を供給し、前記洗浄液を洗い流して除去する第三の工程とを有するようにしたものである。
また、本発明の半導体用基板の洗浄方法は、前記第一の工程から第三の工程までを、洗浄液を切り替えて繰り返すようにしたものである。
また、本発明の半導体用基板の洗浄方法は、前記第二の工程において、前記基板及び該基板表面に盛った洗浄液を該基板の上方からも加熱するようにしたものである。さらに、本発明の半導体用基板の洗浄方法は、平坦な下面を持ち、該下面を高温に保持できる治具を前記基板上の前記洗浄液に近接させ、該洗浄液を加熱するようにしたものである。 The method for cleaning a semiconductor substrate according to the present invention is a method for cleaning a semiconductor substrate using a spin cleaning apparatus that cleans and dries a substrate used for semiconductor manufacture. A first step of dropping a small amount of cleaning liquid and spreading it uniformly on the substrate surface, while rotating the cleaning liquid on the substrate surface at a low speed, while supplying high-temperature ultrapure water to the back surface of the substrate, A second step of cleaning the substrate surface by holding the substrate and the cleaning liquid at a high temperature for a certain period of time, and after the cleaning process for a certain period of time, supplying pure water from above the substrate to wash out the cleaning liquid And a third step to be removed.
In the semiconductor substrate cleaning method of the present invention, the first to third steps are repeated by switching the cleaning liquid.
In the method for cleaning a semiconductor substrate of the present invention, in the second step, the cleaning liquid accumulated on the substrate and the substrate surface is also heated from above the substrate. Furthermore, the semiconductor substrate cleaning method of the present invention has a flat lower surface, a jig capable of holding the lower surface at a high temperature is brought close to the cleaning solution on the substrate, and the cleaning solution is heated. .

本発明のスピン式洗浄装置は、半導体製造に使用される基板を保持し、前記基板の下方から超純水を供給するノズルと、前記基板の上方から洗浄液を供給するノズルとを有し、前記基板を洗浄、乾燥するスピン式の洗浄装置において、前記基板を上方から加熱する機構を有するようにしたものである。
また、本発明のスピン式洗浄装置は、前記基板を上方から加熱する機構が、平坦な下面を持ち、該下面を高温に保持できる冶具であるようにしたものである。 The spin cleaning apparatus of the present invention includes a nozzle that holds a substrate used for semiconductor manufacturing and supplies ultrapure water from below the substrate, and a nozzle that supplies cleaning liquid from above the substrate, A spin cleaning apparatus for cleaning and drying a substrate has a mechanism for heating the substrate from above.
In the spin cleaning apparatus of the present invention, the mechanism for heating the substrate from above is a jig that has a flat lower surface and can maintain the lower surface at a high temperature.

本発明の洗浄方法によれば、従来のスピン式洗浄方法のように、高温の洗浄液を基板洗浄処理中に常時供給しつづける必要は無く、熱源として供給しつづけるのは裏面より供給される高温の超純水のみで良い。したがって、洗浄液を大量に消費することなく長時間の処理が可能である。また、洗浄液は循環して使用するのではなく、基板1枚ごとに新しい液を使い捨てるため、洗浄液の劣化が無い。更に洗浄液は洗浄処理前に予め加熱せず、常温の不活性な状態にて保持されるため、洗浄液の経時劣化は最小限に抑えられる。以上により、安定して浸漬式洗浄方法以上の高い洗浄能力を持ちつつ、スピン式洗浄方法の利点である異物の再付着の極めて少ない洗浄方法を実現することができる。
また、本発明の洗浄装置の構成は、洗浄液の温調循環装置が不必要となり、装置の導入コスト及びメンテナンスが削減され、基板洗浄工程のコストが低減される。 According to the cleaning method of the present invention, unlike the conventional spin cleaning method, it is not necessary to continuously supply a high temperature cleaning liquid during the substrate cleaning process, and it is possible to continue supplying the heat source as a high temperature supplied from the back surface. Only ultrapure water is required. Therefore, long-time processing is possible without consuming a large amount of cleaning liquid. In addition, since the cleaning liquid is not used in a circulating manner, a new liquid is disposed for each substrate, so that the cleaning liquid is not deteriorated. Furthermore, since the cleaning liquid is not heated in advance before the cleaning process and is maintained in an inactive state at room temperature, the deterioration of the cleaning liquid over time can be minimized. As described above, it is possible to realize a cleaning method that has an extremely high cleaning ability that is higher than that of the immersion type cleaning method and that has very little foreign matter reattachment, which is an advantage of the spin type cleaning method.
The configuration of the cleaning apparatus of the present invention eliminates the need for a temperature control and circulation apparatus for the cleaning liquid, reduces the introduction cost and maintenance of the apparatus, and reduces the cost of the substrate cleaning process.

本発明において洗浄する基板としては、シリコン半導体基板、化合物半導体基板、フォトマスクブランクス基板、フォトマスク基板等の半導体に使用される基板に限られることなく、液晶表示基板、電子部品搭載基板等も用いることができる。
以下、本発明を実施するための最良の形態を、図面に基づいて説明する。 The substrate to be cleaned in the present invention is not limited to a substrate used for a semiconductor such as a silicon semiconductor substrate, a compound semiconductor substrate, a photomask blank substrate, or a photomask substrate, but a liquid crystal display substrate, an electronic component mounting substrate, or the like is also used. be able to.
The best mode for carrying out the present invention will be described below with reference to the drawings.

(第１の実施形態)
図1〜図４は、本発明における基板洗浄方法の処理工程を示す断面模式図である。図1〜図４において、同じ部位を示す場合には、同じ符号を用いている。
図１は洗浄処理前の状態を示す断面図である。スピン式洗浄装置１１に洗浄すべき基板１２を載置する。基板１２は、スピンテーブル１３上に設けたストッパー等による基板保持冶具１４により、回転中に動かないように水平状態で保持される。基板保持冶具１４は、基板１２中央を回転軸の中心とし、基板を水平に保持すると共に、基板裏面を超純水で洗浄できるように空間を設けてある。続いて、基板１２を低速回転させながら、スピン回転軸に設けた裏面用ノズル１５から室温の超純水１６を基板裏面に供給する。基板裏面に超純水１６を供給するのは、洗浄液の一部が基板表面側から裏面側に回り込み、裏面に汚れた洗浄液による跡が残ることがあり、この洗浄跡は微細な塵埃や異物等を含んでいるため、次工程での汚染源となるので、基板裏面側洗浄を行なうのが好ましいからである。
低速回転の回転数は、次に洗浄液を滴下する時に合わせて、数ｒｐｍ〜数１０ｒｐｍ程度とするのが好ましい。
図示はしてないが、スピン式洗浄装置１１は、通常、洗浄チャンバー内に設置するのが好ましい。 (First embodiment)
1 to 4 are schematic cross-sectional views showing processing steps of the substrate cleaning method according to the present invention. 1 to 4, the same reference numerals are used to indicate the same parts.
FIG. 1 is a cross-sectional view showing a state before the cleaning process. A substrate 12 to be cleaned is placed on the spin cleaning apparatus 11. The substrate 12 is held in a horizontal state so as not to move during rotation by a substrate holding jig 14 such as a stopper provided on the spin table 13. The substrate holding jig 14 is provided with a space so that the center of the substrate 12 is the center of the rotation axis, the substrate is held horizontally, and the back surface of the substrate can be cleaned with ultrapure water. Subsequently, while rotating the substrate 12 at a low speed, room-temperature ultrapure water 16 is supplied from the back surface nozzle 15 provided on the spin rotation shaft to the back surface of the substrate. The reason why ultrapure water 16 is supplied to the back surface of the substrate is that a part of the cleaning liquid may go around from the front surface side to the back surface, and a trace due to the dirty cleaning solution may remain on the back surface. This is because it is a source of contamination in the next process, and therefore it is preferable to perform the backside cleaning of the substrate.
The rotational speed of the low-speed rotation is preferably set to about several rpm to several tens rpm in accordance with the next dropping of the cleaning liquid.
Although not shown, it is usually preferable to install the spin cleaning apparatus 11 in a cleaning chamber.

次に、図２に洗浄液滴下工程を示すように、スピンテーブル１３を低速回転させながら、低速回転する基板１２の表面上に、常温の洗浄液２１を基板１２の表面に盛り上がるように滴下し、基板表面に均一に広げる。低速回転の回転数は、洗浄液滴下時に、洗浄液を基板上に均一に広げ、かつ、洗浄液が基板上から飛散しないようにし、洗浄液を基板上に盛った状態とするために、数ｒｐｍ〜数１０ｒｐｍ程度とするが好ましい。
本発明で用いる洗浄液２１としては、基板洗浄に通常用いられる硫酸過水、アンモニア過水等の薬液が用いられる。硫酸過水としては、例えば、体積比で９６％硫酸１に対して３０％過酸化水素水を０．１〜０．２５程度含む洗浄液が用いられ、アンモニア過水としては、例えば、体積比で２８％アンモニア水溶液１に対して３０％過酸化水素水を１、さらに純水を５〜１０程度含む洗浄液が用いられる。
洗浄液２１の滴下量としては、洗浄液が基板上全面に均一に広がればよいので、洗浄すべき基板の大きさ、形状、洗浄液の表面張力等に依存するが、例えば、６インチ角のフォトマスク基板ならば数１０ｍｌで基板全面に均一に広げることができる。
洗浄液２１滴下時、基板１２裏面側には引き続いて室温の超純水１６が供給されており、基板１２裏面を清浄に保つようにしている。本発明では、この工程までを第一の工程とする。 Next, as shown in FIG. 2, the cleaning liquid dropping step, while the spin table 13 is rotated at a low speed, a room-temperature cleaning liquid 21 is dropped on the surface of the substrate 12 so as to rise on the surface of the substrate 12. Spread evenly on the surface. The rotation speed of the low-speed rotation is several rpm to several tens of rpm in order to spread the cleaning liquid uniformly on the substrate and prevent the cleaning liquid from splashing from the substrate when the cleaning droplet is dropped, and to keep the cleaning liquid on the substrate. However, it is preferable.
As the cleaning solution 21 used in the present invention, a chemical solution such as sulfuric acid / hydrogen peroxide or ammonia / water that is usually used for substrate cleaning is used. As the sulfuric acid perwater, for example, a cleaning solution containing about 0.1 to 0.25 of 30% hydrogen peroxide water with respect to 96% sulfuric acid 1 by volume is used. A cleaning solution containing 1% 30% hydrogen peroxide and 5 to 10 pure water with respect to 28% aqueous ammonia solution 1 is used.
The amount of the cleaning liquid 21 to be dripped only needs to spread uniformly over the entire surface of the substrate, and depends on the size and shape of the substrate to be cleaned, the surface tension of the cleaning liquid, and the like. For example, a 6-inch square photomask substrate If so, it can be spread evenly over the entire surface with several tens of ml.
When the cleaning liquid 21 is dripped, the ultrapure water 16 at room temperature is continuously supplied to the back surface side of the substrate 12 to keep the back surface of the substrate 12 clean. In the present invention, this process is the first process.

次に、図３に洗浄処理工程を示すように、基板表面に洗浄液を盛った状態で基板を低速回転する一方で、基板裏面に高温の超純水３１を供給し、基板１２及び基板上に盛られた洗浄液３２を加熱しながら一定時間保持する。この段階で、基板表面に盛られた硫酸過水等の洗浄液３２は高温の活性状態となり、高温の洗浄液３２は基板１２上に付着している有機物、金属、異物等の汚染物質を効率良く溶解する。高温の超純水３１の温度としては、その温度が高いほど基板１２及び基板上の洗浄液３２を加熱する効果が高まり、６０℃〜９５℃程度の温度範囲が効果的であり、さらには８０℃〜９０℃がより好ましい。加熱された洗浄液３２の温度としては、４０℃〜９０℃程度が好ましい。高温の洗浄液３２を、基板１２上に一定時間保持する時間としては、洗浄液３２の温度、基板１２の汚染度合い、洗浄効果、生産効率等を考慮して決められるものであり、厳密に制御する必要はないが、例えば、８０℃の硫酸過水を用いた場合では、３〜１０分程度の時間範囲が適用し得る。本発明では、この工程を第二の工程とする。   Next, as shown in FIG. 3, the substrate is rotated at a low speed with the cleaning liquid on the surface of the substrate, while high-temperature ultrapure water 31 is supplied to the back surface of the substrate, and the substrate 12 and the substrate are placed on the substrate 12 and the substrate. The accumulated cleaning liquid 32 is held for a certain time while being heated. At this stage, the cleaning solution 32 such as sulfuric acid / hydrogen peroxide accumulated on the surface of the substrate is in a high temperature active state, and the high temperature cleaning solution 32 efficiently dissolves contaminants such as organic matter, metal and foreign matter adhering to the substrate 12. To do. As the temperature of the high-temperature ultrapure water 31, the higher the temperature, the higher the effect of heating the substrate 12 and the cleaning liquid 32 on the substrate, and a temperature range of about 60 ° C. to 95 ° C. is more effective. -90 degreeC is more preferable. The temperature of the heated cleaning liquid 32 is preferably about 40 ° C to 90 ° C. The time for holding the high temperature cleaning liquid 32 on the substrate 12 for a certain period of time is determined in consideration of the temperature of the cleaning liquid 32, the degree of contamination of the substrate 12, the cleaning effect, production efficiency, and the like, and must be strictly controlled. However, for example, when sulfuric acid / hydrogen peroxide at 80 ° C. is used, a time range of about 3 to 10 minutes can be applied. In the present invention, this step is the second step.

次に、図４に洗浄処理後のリンス工程を示すように、一定時間の洗浄処理後、基板１２を低速回転させながら、基板１２の表面上に室温の超純水４１を供給し、基板上を超純水４１により十分にリンスし、基板表面から汚染物質を含んだ硫酸過水等の洗浄液を基板１２の外側に洗い流す。低速回転の回転数としては、数１０ｒｐｍ程度が好ましい。本発明では、この工程を第三の工程とする。
次に、例えば、高速回転によるスピン乾燥により、基板１２は乾燥され、基板洗浄工程が完了する。
本発明の洗浄能力の高い洗浄方法を用いることにより、異物の再付着のない高品質の半導体に使用される基板が得られ、また、洗浄液は常温で保持されるので、液の経時的劣化が少ない。 Next, as shown in FIG. 4, the rinsing process after the cleaning process, after the cleaning process for a certain time, while the substrate 12 is rotated at a low speed, the room-temperature ultrapure water 41 is supplied onto the surface of the substrate 12. Is thoroughly rinsed with ultrapure water 41, and a cleaning solution such as sulfuric acid / hydrogen peroxide containing contaminants is washed out of the substrate 12 from the substrate surface. The number of rotations at low speed is preferably about several tens of rpm. In the present invention, this step is the third step.
Next, for example, the substrate 12 is dried by spin drying by high-speed rotation, and the substrate cleaning process is completed.
By using the cleaning method with high cleaning ability of the present invention, a substrate used for a high-quality semiconductor without reattachment of foreign matters can be obtained, and since the cleaning liquid is kept at room temperature, the deterioration of the liquid over time can be achieved. Few.

(第２の実施形態)
本発明においては、図４に示したリンス工程の後に、洗浄液を切り替えて、上記の第一の工程から第三の工程までを繰り返すこともできる。例えば、最初の洗浄液が硫酸過水であれば、２番目の洗浄液をアンモニア過水等の別な洗浄液に切り替えて用い、一連の洗浄処理の後に、基板乾燥し、基板洗浄工程を完了させる方法も適用し得る。この場合、基板表面洗浄用のノズルを１本で洗浄液を切り替えて使用してもよいし、２本以上の複数本のノズルを設けて、洗浄液ごとに切り替えて使用してもよい。
異なる洗浄液を切り替えて使用することにより、一種類の洗浄液のみでは洗浄しにくい汚れも除去することが可能となり、より高い洗浄効果が得られる。 (Second Embodiment)
In the present invention, after the rinsing step shown in FIG. 4, the cleaning liquid can be switched to repeat the first to third steps. For example, if the first cleaning solution is sulfuric acid / hydrogen peroxide, the second cleaning solution can be used by switching to another cleaning solution such as ammonia water, and after a series of cleaning treatments, the substrate is dried to complete the substrate cleaning process. Applicable. In this case, the substrate surface cleaning nozzle may be used by switching the cleaning liquid with a single nozzle, or two or more nozzles may be provided and switched for each cleaning liquid.
By switching and using different cleaning liquids, it becomes possible to remove dirt that is difficult to clean with only one type of cleaning liquid, and a higher cleaning effect can be obtained.

(第３の実施形態)
本発明の第二の工程における、別な実施形態を図５に示す。この実施形態は、基板１２の表面側にも加熱機構を備えた本発明のスピン式洗浄装置５１を用いた形態であり、基板１２上に盛られた洗浄液３２を上部からも加熱するスピン式洗浄方法である。基板表面側の加熱機構は、赤外線ランプ等の放射熱源による加熱方法、あるいは高温プレート等との近接接触による加熱方法により行ない得る。後者の加熱方法について、図５を用いて更に説明する。 (Third embodiment)
Another embodiment in the second step of the present invention is shown in FIG. In this embodiment, the spin cleaning device 51 of the present invention having a heating mechanism on the surface side of the substrate 12 is used, and the spin cleaning that heats the cleaning liquid 32 deposited on the substrate 12 also from above. Is the method. The heating mechanism on the substrate surface side can be performed by a heating method using a radiant heat source such as an infrared lamp, or a heating method using close contact with a high temperature plate or the like. The latter heating method will be further described with reference to FIG.

図５は、本発明のスピン式洗浄装置５１において、高温超純水３１による基板１２の裏面側からの基板１２及び基板上の洗浄液３２の加熱に加えて、基板１２の表面側からも加熱を行っている状態を示す。洗浄液を基板表面に盛った後、石英等の対薬品性があり平坦な下面を持ち表面を加熱する機構５３を有するプレート５２を基板１２表面に近接して、例えば、約２ｍｍ程度離れた位置に、配置する。基板上部にプレート５２を設置すると、洗浄液は上部のプレート５２と基板１２表面との隙間に広がり、基板裏面側からの加熱とプレート５２の熱により高温の洗浄液３２となり、更に強く活性化され、洗浄効果が高まるものである。プレート５２は、その内部を８０℃程度の高温の温調水が流れるような構造にして加熱機構５３とすることで、洗浄液を４０℃以上の高温に保つことができる。
本実施形態では、基板裏面からの加熱のみの場合に比べ、基板表面からも加熱され、より高い洗浄効果が得られる。 FIG. 5 shows that in the spin cleaning apparatus 51 of the present invention, heating is also performed from the front surface side of the substrate 12 in addition to the heating of the substrate 12 and the cleaning liquid 32 on the substrate 12 from the back surface side of the substrate 12 by the high-temperature ultrapure water 31. Indicates the state of going. After depositing the cleaning liquid on the substrate surface, a plate 52 having a chemical lowering surface such as quartz and having a flat lower surface and a mechanism 53 for heating the surface is brought close to the surface of the substrate 12, for example, at a position about 2 mm away. ,Deploy. When the plate 52 is installed on the upper part of the substrate, the cleaning liquid spreads in the gap between the upper plate 52 and the surface of the substrate 12, becomes the high-temperature cleaning liquid 32 by the heating from the back side of the substrate and the heat of the plate 52. The effect is increased. The plate 52 can be maintained at a high temperature of 40 ° C. or higher by making the inside of the plate 52 have a structure in which temperature-controlled water having a high temperature of about 80 ° C. flows to form the heating mechanism 53.
In this embodiment, compared with the case of heating only from the back surface of the substrate, the substrate surface is also heated, and a higher cleaning effect is obtained.

（実施例１）
洗浄すべき６インチ角のフォトマスク基板を、スピン式洗浄装置に載置し、基板を３０ｒｐｍで低速回転させ、基板裏面に裏面用ノズルから常温の超純水を供給しながら、基板上部に設けたノズルから洗浄液として常温の硫酸過水（体積比で９６％硫酸：３０％過酸化水素水＝５：１）を基板表面に盛りあがるように約５０ｍｌ量を滴下し、基板表面に均一に広げた。
そのまま、洗浄液を基板表面に盛った状態にて１０ｒｐｍの低速回転にする一方、基板裏面に８０℃の超純水を供給し、基板及び洗浄液を加熱しながら１０分間保持した。この段階で、表面に盛られた硫酸過水は活性状態となり、有機物、金属、異物等の基板上の汚染物質を溶解した。次に基板上部より室温の超純水を供給し、５０ｒｐｍの低速回転で汚染物質を含んだ硫酸過水を基板の外側に洗い流した。十分にリンスを行い、基板表面から硫酸を除去した後、高速スピン乾燥により、基板を乾燥し、洗浄工程を完了し、基板を洗浄装置から取り出した。
本実施例の洗浄方法により、異物の再付着のない高品質のフォトマスク基板が得られた。 (Example 1)
A 6-inch square photomask substrate to be cleaned is placed on a spin-type cleaning device, and the substrate is rotated at a low speed of 30 rpm. About 50 ml of sulfuric acid / hydrogen peroxide at room temperature (96% sulfuric acid: 30% hydrogen peroxide solution = 5: 1) was dropped from the nozzle as a cleaning solution so that the surface was evenly spread over the substrate surface. .
As it is, the cleaning liquid is rotated at a low speed of 10 rpm on the surface of the substrate, while ultrapure water at 80 ° C. is supplied to the back surface of the substrate and held for 10 minutes while heating the substrate and the cleaning liquid. At this stage, the sulfuric acid / hydrogen peroxide accumulated on the surface became active and dissolved contaminants on the substrate such as organic matter, metal and foreign matter. Next, ultrapure water at room temperature was supplied from the top of the substrate, and sulfuric acid / hydrogen peroxide containing contaminants was washed out to the outside of the substrate by rotating at a low speed of 50 rpm. After sufficiently rinsing and removing sulfuric acid from the substrate surface, the substrate was dried by high-speed spin drying to complete the cleaning process, and the substrate was taken out from the cleaning apparatus.
By the cleaning method of this example, a high-quality photomask substrate without foreign matter reattachment was obtained.

（実施例２）
本実施例は、洗浄液を切り替えた場合の例である。実施例１と同様の工程で、６インチ角のフォトマスク基板を硫酸過水（体積比で９６％硫酸：３０％過酸化水素水＝５：１）により洗浄し、超純水によるリンス工程を行なった後、２番目の洗浄液としてアンモニア過水（体積比で２８％アンモニア水溶液：３０％過酸化水素水：純水＝１：１：５）を用い、基板洗浄を行なった。
本実施例の場合、硫酸過水のみの洗浄では除去しきれなかった異物もアンモニア過水で洗浄除去され、高品質のフォトマスク基板が得られた。 (Example 2)
In this embodiment, the cleaning liquid is switched. In the same process as in Example 1, a 6-inch square photomask substrate was washed with sulfuric acid / hydrogen peroxide (96% sulfuric acid: 30% hydrogen peroxide solution = 5: 1 by volume), and rinsed with ultrapure water. After that, the substrate was cleaned using ammonia overwater (28% aqueous ammonia solution: 30% hydrogen peroxide solution: pure water = 1: 1: 5 by volume) as the second cleaning solution.
In the case of this example, foreign matter that could not be removed by washing with sulfuric acid / hydrogen peroxide alone was also washed away with ammonia / hydrogen peroxide, and a high-quality photomask substrate was obtained.

(実施例３)
洗浄すべき８インチ径のシリコンウェーハ基板を、本発明のスピン式洗浄装置に載置し、基板を２５ｒｐｍで低速回転させ、基板裏面に裏面用ノズルから常温の超純水を供給しながら、基板上部に設けたノズルから常温の硫酸過水を基板表面に盛りあがるように約６０ｍｌ量を滴下し、基板表面に均一に広げた。
次に、洗浄液を基板表面に盛った状態にて１０ｒｐｍの低速回転にし、基板裏面に８０℃の超純水を供給し、基板を下側から加熱し、一方、平坦な下面を有し、その内部を８０℃程度の高温の温調水が流れるような構造にした石英製のプレートを、基板表面に近接して、基板上の洗浄液から約２ｍｍの位置に配置し、基板及び洗浄液を上部からも加熱し、１０分間保持した。この段階で、表面に盛られた硫酸過水は活性状態となり、有機物、金属、異物等の基板上の汚染物質を溶解した。
次に、プレートを除去し、基板上部より超純水を供給し、５０ｒｐｍの低速回転で汚染物質を含んだ硫酸過水を基板の外側に洗い流した。超純水で十分にリンスを行い、基板表面から硫酸を除去した後、高速スピン乾燥により、基板を乾燥し、洗浄工程を完了し、基板を洗浄装置から取り出した。
本発明のスピン式洗浄装置を用いた本実施例の洗浄方法において、異物の再付着のない高品質のシリコンウェーハ基板が得られた。 Example 3
An 8-inch diameter silicon wafer substrate to be cleaned is placed on the spin cleaning apparatus of the present invention, the substrate is rotated at a low speed of 25 rpm, and ultra-pure water at room temperature is supplied to the back surface of the substrate from the back nozzle. About 60 ml amount of sulfuric acid / hydrogen peroxide at room temperature was dropped from a nozzle provided at the top so as to rise on the surface of the substrate, and spread uniformly on the surface of the substrate.
Next, the substrate is rotated at a low speed of 10 rpm while the cleaning liquid is piled up on the surface of the substrate, ultrapure water of 80 ° C. is supplied to the back surface of the substrate, and the substrate is heated from the lower side, while having a flat lower surface, A quartz plate with a structure in which high-temperature water at a high temperature of about 80 ° C. flows is placed close to the substrate surface, at a position of about 2 mm from the cleaning solution on the substrate, and the substrate and the cleaning solution are placed from above. Was also heated and held for 10 minutes. At this stage, the sulfuric acid / hydrogen peroxide accumulated on the surface became active and dissolved contaminants on the substrate such as organic matter, metal and foreign matter.
Next, the plate was removed, ultrapure water was supplied from the upper part of the substrate, and sulfuric acid / hydrogen peroxide containing contaminants was washed out to the outside of the substrate by rotating at a low speed of 50 rpm. After sufficiently rinsing with ultrapure water to remove sulfuric acid from the substrate surface, the substrate was dried by high-speed spin drying, the cleaning process was completed, and the substrate was taken out of the cleaning apparatus.
In the cleaning method of this example using the spin cleaning apparatus of the present invention, a high-quality silicon wafer substrate without reattachment of foreign matters was obtained.

本発明の洗浄方法の洗浄処理前を示す断面図Sectional drawing which shows before the cleaning process of the cleaning method of the present invention 本発明の洗浄方法の洗浄液滴下工程を示す断面図Sectional drawing which shows the washing | cleaning droplet lowering process of the washing | cleaning method of this invention 本発明の洗浄方法の洗浄処理工程を示す断面図Sectional drawing which shows the washing process process of the washing | cleaning method of this invention 本発明の洗浄方法の洗浄処理後のリンス工程を示す断面図Sectional drawing which shows the rinse process after the washing process of the washing | cleaning method of this invention 本発明の洗浄方法の洗浄処理工程の別な形態と本発明のスピン式洗浄装置をを示す断面図Sectional drawing which shows another form of the washing | cleaning process of the washing | cleaning method of this invention, and the spin type cleaning apparatus of this invention 従来の浸漬式洗浄装置の構成図Configuration of conventional immersion cleaning equipment 従来のスピン式洗浄装置の断面図Cross-sectional view of a conventional spin cleaning device

符号の説明Explanation of symbols

１１ スピン式洗浄装置
１２ 基板
１３ スピンテーブル
１４ 基板保持冶具
１５ 裏面用ノズル
１６ 室温の超純水
１７ ノズル
２１ 常温の洗浄液
３１ 高温の超純水
３２ 基板上に盛られた高温の洗浄液
４１ 室温の超純水
５１ スピン式洗浄装置
５２ プレート
５３ 加熱機構
６１ 洗浄液
６２ 洗浄処理槽
６３ 被洗浄基板
６４ ポンプ
６５ フィルター
６６ ヒーター
７１ 被洗浄基板
７２ 回転軸
７３ 基板保持治具
７４ ノズル
７５ 洗浄液
７６ 室温の超純水




























DESCRIPTION OF SYMBOLS 11 Spin type cleaning apparatus 12 Substrate 13 Spin table 14 Substrate holding jig 15 Back surface nozzle 16 Room temperature ultrapure water 17 Nozzle 21 Room temperature cleaning liquid 31 High temperature ultrapure water 32 High temperature cleaning liquid placed on substrate 41 Room temperature ultra high temperature Pure water 51 Spin cleaning device 52 Plate 53 Heating mechanism 61 Cleaning liquid 62 Cleaning treatment tank 63 Substrate to be cleaned 64 Pump 65 Filter 66 Heater 71 Substrate to be cleaned 72 Rotating shaft 73 Substrate holding jig 74 Nozzle 75 Cleaning liquid 76 Ultrapure water at room temperature




























Claims (6)

半導体製造に使用される基板を洗浄、乾燥するスピン式の洗浄装置を用いた半導体用基板の洗浄方法において、低速回転する前記基板の表面上に常温の洗浄液を少量滴下し、前記基板表面に均一に広げる第一の工程と、前記洗浄液を前記基板表面に盛った状態にて低速回転する一方、前記基板裏面に高温の超純水を供給し、前記基板及び前記洗浄液を高温に加熱しながら一定時間保持して前記基板表面を洗浄処理する第二の工程と、一定時間の洗浄処理後、前記基板の上方から超純水を供給し、前記洗浄液を洗い流して除去する第三の工程とを有することを特徴とする半導体用基板の洗浄方法。 In a semiconductor substrate cleaning method using a spin-type cleaning device that cleans and dries a substrate used in semiconductor manufacturing, a small amount of a normal temperature cleaning solution is dropped on the surface of the substrate rotating at a low speed, and the substrate surface is evenly distributed. A first step of spreading the substrate to the surface of the substrate and rotating at a low speed while supplying the high temperature ultrapure water to the back surface of the substrate and heating the substrate and the cleaning solution to a high temperature while maintaining a constant temperature. A second step of cleaning the substrate surface by holding for a period of time, and a third step of supplying ultrapure water from above the substrate after the cleaning process for a fixed time, and washing away the cleaning liquid. A method for cleaning a semiconductor substrate. 前記第一の工程から第三の工程までを、洗浄液を切り替えて繰り返すことを特徴とする請求項１に記載の半導体用基板の洗浄方法。 2. The method for cleaning a semiconductor substrate according to claim 1, wherein the steps from the first step to the third step are repeated by switching the cleaning liquid. 前記第二の工程において、前記基板及び該基板表面に盛った洗浄液を該基板の上方からも加熱することを特徴とする請求項１または２に記載の半導体用基板の洗浄方法。 3. The method for cleaning a semiconductor substrate according to claim 1, wherein, in the second step, the cleaning liquid accumulated on the substrate and the substrate surface is also heated from above the substrate. 請求項３に記載の半導体用基板の洗浄方法において、平坦な下面を持ち、該下面を高温に保持できる治具を前記基板上の前記洗浄液に近接させ、該洗浄液を加熱することを特徴とする半導体用基板の洗浄方法。 4. The method for cleaning a semiconductor substrate according to claim 3, wherein a jig having a flat lower surface and capable of holding the lower surface at a high temperature is brought close to the cleaning liquid on the substrate, and the cleaning liquid is heated. A method for cleaning a semiconductor substrate. 半導体製造に使用される基板を保持し、前記基板の下方から超純水を供給するノズルと、前記基板の上方から洗浄液を供給するノズルとを有し、前記基板を洗浄、乾燥するスピン式の洗浄装置において、前記基板を上方から加熱する機構を有することを特徴とするスピン式洗浄装置。 A spin type holding a substrate used for semiconductor manufacture and having a nozzle for supplying ultrapure water from below the substrate and a nozzle for supplying a cleaning liquid from above the substrate, and cleaning and drying the substrate The spin cleaning apparatus according to claim 1, further comprising a mechanism for heating the substrate from above. 請求項５に記載のスピン式洗浄装置において、前記基板を上方から加熱する機構が、平坦な下面を持ち、該下面を高温に保持できる冶具であることを特徴とするスピン式洗浄装置。


























6. The spin cleaning apparatus according to claim 5, wherein the mechanism for heating the substrate from above is a jig having a flat lower surface and capable of holding the lower surface at a high temperature.


























JP2004056704A 2004-03-01 2004-03-01 Photomask substrate cleaning method Expired - Fee Related JP4766836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004056704A JP4766836B2 (en) 2004-03-01 2004-03-01 Photomask substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056704A JP4766836B2 (en) 2004-03-01 2004-03-01 Photomask substrate cleaning method

Publications (2)

Publication Number Publication Date
JP2005251806A true JP2005251806A (en) 2005-09-15
JP4766836B2 JP4766836B2 (en) 2011-09-07

Family

ID=35032032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004056704A Expired - Fee Related JP4766836B2 (en) 2004-03-01 2004-03-01 Photomask substrate cleaning method

Country Status (1)

Country Link
JP (1) JP4766836B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050143A (en) * 2008-08-19 2010-03-04 Dainippon Screen Mfg Co Ltd Substrate processing method, and substrate processing apparatus
CN102366753A (en) * 2011-10-10 2012-03-07 江苏港星方能超声洗净科技有限公司 Clamping device for cleaning organosilicon optical conductors
JP2014197571A (en) * 2012-08-28 2014-10-16 大日本スクリーン製造株式会社 Substrate processing method and substrate processing device
WO2018193920A1 (en) * 2017-04-19 2018-10-25 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing device
CN109585262A (en) * 2017-09-28 2019-04-05 台湾积体电路制造股份有限公司 The method of clean semiconductor substrate
KR20210145058A (en) * 2020-05-22 2021-12-01 사이언테크 코포레이션 Wafer Rinsing Device

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04353750A (en) * 1991-05-30 1992-12-08 Tadahiro Omi Evaluation of segregation state of solid-liquid interface and segregation apparatus
JPH0837143A (en) * 1994-07-25 1996-02-06 Fuji Xerox Co Ltd Semiconductor treatmnt apparatus
JPH118213A (en) * 1997-06-13 1999-01-12 Komatsu Ltd Method of wafer treatment
JP2000223394A (en) * 1999-01-29 2000-08-11 Dainippon Screen Mfg Co Ltd Substrate-treating device and method for treating substrate
JP2001015475A (en) * 1999-06-28 2001-01-19 Seiko Epson Corp Cleaning apparatus and cleaning method
JP2001073157A (en) * 1999-09-08 2001-03-21 Sony Corp Electroless plating method and device therefor
JP2001321735A (en) * 2000-05-16 2001-11-20 Nec Corp Method for removing foreign matters
JP2002118085A (en) * 2000-10-06 2002-04-19 M Fsi Kk Substrate-treating method and apparatus therefor
JP2002136935A (en) * 2001-08-29 2002-05-14 Tokyo Electron Ltd Device and method for cleaning treatment
JP2002219424A (en) * 2001-01-23 2002-08-06 Tokyo Electron Ltd Substrate processing unit and substrate processing method
JP2003115474A (en) * 2001-10-03 2003-04-18 Ebara Corp Substrate processor and processing method
JP2003188139A (en) * 2001-12-20 2003-07-04 Mitsubishi Electric Corp Method of manufacturing semiconductor device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04353750A (en) * 1991-05-30 1992-12-08 Tadahiro Omi Evaluation of segregation state of solid-liquid interface and segregation apparatus
JPH0837143A (en) * 1994-07-25 1996-02-06 Fuji Xerox Co Ltd Semiconductor treatmnt apparatus
JPH118213A (en) * 1997-06-13 1999-01-12 Komatsu Ltd Method of wafer treatment
JP2000223394A (en) * 1999-01-29 2000-08-11 Dainippon Screen Mfg Co Ltd Substrate-treating device and method for treating substrate
JP2001015475A (en) * 1999-06-28 2001-01-19 Seiko Epson Corp Cleaning apparatus and cleaning method
JP2001073157A (en) * 1999-09-08 2001-03-21 Sony Corp Electroless plating method and device therefor
JP2001321735A (en) * 2000-05-16 2001-11-20 Nec Corp Method for removing foreign matters
JP2002118085A (en) * 2000-10-06 2002-04-19 M Fsi Kk Substrate-treating method and apparatus therefor
JP2002219424A (en) * 2001-01-23 2002-08-06 Tokyo Electron Ltd Substrate processing unit and substrate processing method
JP2002136935A (en) * 2001-08-29 2002-05-14 Tokyo Electron Ltd Device and method for cleaning treatment
JP2003115474A (en) * 2001-10-03 2003-04-18 Ebara Corp Substrate processor and processing method
JP2003188139A (en) * 2001-12-20 2003-07-04 Mitsubishi Electric Corp Method of manufacturing semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050143A (en) * 2008-08-19 2010-03-04 Dainippon Screen Mfg Co Ltd Substrate processing method, and substrate processing apparatus
CN102366753A (en) * 2011-10-10 2012-03-07 江苏港星方能超声洗净科技有限公司 Clamping device for cleaning organosilicon optical conductors
CN102366753B (en) * 2011-10-10 2012-11-14 江苏港星方能超声洗净科技有限公司 Clamping device for cleaning organosilicon optical conductors
JP2014197571A (en) * 2012-08-28 2014-10-16 大日本スクリーン製造株式会社 Substrate processing method and substrate processing device
KR20190137869A (en) * 2017-04-19 2019-12-11 가부시키가이샤 스크린 홀딩스 Substrate processing method and substrate processing apparatus
JP2018182212A (en) * 2017-04-19 2018-11-15 株式会社Ｓｃｒｅｅｎホールディングス Wafer processing method and wafer processing device
CN110537248A (en) * 2017-04-19 2019-12-03 株式会社斯库林集团 Substrate processing method using same and substrate board treatment
WO2018193920A1 (en) * 2017-04-19 2018-10-25 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing device
KR102278972B1 (en) * 2017-04-19 2021-07-16 가부시키가이샤 스크린 홀딩스 Substrate processing method and substrate processing apparatus
JP6990034B2 (en) 2017-04-19 2022-01-12 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and board processing equipment
US11660644B2 (en) 2017-04-19 2023-05-30 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing device
CN110537248B (en) * 2017-04-19 2023-07-14 株式会社斯库林集团 Substrate processing method and substrate processing apparatus
CN109585262A (en) * 2017-09-28 2019-04-05 台湾积体电路制造股份有限公司 The method of clean semiconductor substrate
CN109585262B (en) * 2017-09-28 2023-12-26 台湾积体电路制造股份有限公司 Method for cleaning semiconductor substrate
KR20210145058A (en) * 2020-05-22 2021-12-01 사이언테크 코포레이션 Wafer Rinsing Device
KR102379439B1 (en) 2020-05-22 2022-03-28 사이언테크 코포레이션 Wafer Rinsing Device

Also Published As

Publication number Publication date
JP4766836B2 (en) 2011-09-07

Similar Documents

Publication Publication Date Title
TW201817501A (en) Apparatus for substrate wet processing
JP2008034779A (en) Method and equipment for processing substrate
KR102276773B1 (en) Substrate processing method and substrate processing apparatus
JP6275090B2 (en) Process separation type substrate processing apparatus and processing method
JP2008034428A (en) Equipment and method for processing substrate
JP4766836B2 (en) Photomask substrate cleaning method
JP7292107B2 (en) Substrate processing method and substrate processing apparatus
JP4791905B2 (en) Substrate cleaning method
JP6749405B2 (en) Substrate processing method and substrate processing apparatus
JP2006181426A (en) Apparatus and method for treatment of substrate
KR20090030204A (en) Process for cleaning a semiconductor wafer
JP2009021617A (en) Substrate processing method
JP3035450B2 (en) Substrate cleaning method
JP2002151453A (en) Cleaning method and apparatus for precision substrate
JP5321574B2 (en) Method of operating semiconductor manufacturing apparatus and method of manufacturing semiconductor device
JPH11145105A (en) Cleaning device
JP4995237B2 (en) Substrate processing apparatus and substrate processing method
JP4357456B2 (en) Semiconductor substrate cleaning method
JP2005175036A (en) Substrate treatment apparatus
JP2006070349A (en) Semiconductor fabrication equipment
JPH10340875A (en) Treatment equipment and treatment method
JP7300433B2 (en) Epitaxial wafer cleaning method
JP3000997B1 (en) Semiconductor cleaning apparatus and semiconductor device cleaning method
KR100909337B1 (en) Wet cleaning method and wet cleaning device controller
KR100567128B1 (en) Equipment for cleaning wafers and method of removing metallic residue

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090410

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090414

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090611

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20091201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100225

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100308

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20100514

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110518

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110614

R150 Certificate of patent or registration of utility model

Ref document number: 4766836

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140624

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees