JPH0436255U - - Google Patents

Info

Publication number
JPH0436255U
JPH0436255U JP7773990U JP7773990U JPH0436255U JP H0436255 U JPH0436255 U JP H0436255U JP 7773990 U JP7773990 U JP 7773990U JP 7773990 U JP7773990 U JP 7773990U JP H0436255 U JPH0436255 U JP H0436255U
Authority
JP
Japan
Prior art keywords
diffusion layer
type
semiconductor substrate
type semiconductor
photothyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7773990U
Other languages
English (en)
Other versions
JP2521745Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990077739U priority Critical patent/JP2521745Y2/ja
Publication of JPH0436255U publication Critical patent/JPH0436255U/ja
Application granted granted Critical
Publication of JP2521745Y2 publication Critical patent/JP2521745Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Description

【図面の簡単な説明】
第１図は本案の一実施例の略断面図、第２図は
他の実施例の略断面図、第３図は従来例の略断面
図である。 １……Ｎ型半導体基板、２……アノード拡散層
、３……Ｐゲート拡散層、４……カソード拡散層
、８……Ｎ型拡散層。

Claims (1)

    【実用新案登録請求の範囲】
  1. Ｎ型半導体基板の表面のＰゲート拡散層とアノ
    ード拡散層との間のＮ型の領域とその表面の絶縁
    膜との界面に、Ｎ型半導体基板の不純物濃度より
    も高い濃度のＮ型拡散層を形成したフオトサイリ
    スタ。
JP1990077739U 1990-07-20 1990-07-20 フォトサイリスタ Expired - Lifetime JP2521745Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990077739U JP2521745Y2 (ja) 1990-07-20 1990-07-20 フォトサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990077739U JP2521745Y2 (ja) 1990-07-20 1990-07-20 フォトサイリスタ

Publications (2)

Publication Number Publication Date
JPH0436255U true JPH0436255U (ja) 1992-03-26
JP2521745Y2 JP2521745Y2 (ja) 1997-01-08

Family

ID=31620401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990077739U Expired - Lifetime JP2521745Y2 (ja) 1990-07-20 1990-07-20 フォトサイリスタ

Country Status (1)

Country Link
JP (1) JP2521745Y2 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562668A (en) * 1979-06-21 1981-01-12 Nec Corp Planar type thyristor
JPS6353973A (ja) * 1986-08-22 1988-03-08 Sharp Corp フオトサイリスタチツプ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562668A (en) * 1979-06-21 1981-01-12 Nec Corp Planar type thyristor
JPS6353973A (ja) * 1986-08-22 1988-03-08 Sharp Corp フオトサイリスタチツプ

Also Published As

Publication number Publication date
JP2521745Y2 (ja) 1997-01-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term