JPH04341567A - Method for synthesizing cubic boron nitride - Google Patents
Method for synthesizing cubic boron nitrideInfo
- Publication number
- JPH04341567A JPH04341567A JP14130491A JP14130491A JPH04341567A JP H04341567 A JPH04341567 A JP H04341567A JP 14130491 A JP14130491 A JP 14130491A JP 14130491 A JP14130491 A JP 14130491A JP H04341567 A JPH04341567 A JP H04341567A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- boron nitride
- cubic boron
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052582 BN Inorganic materials 0.000 title claims description 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 14
- 230000002194 synthesizing effect Effects 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 51
- 239000002994 raw material Substances 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000007858 starting material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910015844 BCl3 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 5
- 238000010571 fourier transform-infrared absorption spectrum Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- -1 nitrogen-containing compound Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、切削工具等の工業材料
やヒートシンク等の電子材料となる立方晶窒化硼素の合
成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for synthesizing cubic boron nitride, which can be used as industrial materials such as cutting tools and electronic materials such as heat sinks.
【０００２】0002
【従来の技術】立方晶窒化硼素（ｃ−ＢＮ）はダイヤモ
ンドに次ぐ硬さ、熱伝導率を有すると共に、鉄族合金に
対して極めて化学的に安定であるところから、切削工具
、金型等の耐久性向上への応用、あるいは半導体素子、
発光素子等への応用など幅広い用途がある。[Prior Art] Cubic boron nitride (c-BN) has hardness and thermal conductivity second only to diamond, and is extremely chemically stable with respect to iron group alloys, so it is used in cutting tools, molds, etc. application to improve the durability of semiconductor devices,
It has a wide range of uses, including applications in light-emitting devices.
【０００３】この立方晶窒化硼素は、気相化学蒸着法（
ＣＶＤ）により合成されており、特開昭６３−２３９１
９７号公報および同６３−２７７７６６号公報には、そ
の従来技術が開示されている。[0003] This cubic boron nitride is produced by vapor phase chemical vapor deposition (
It was synthesized by CVD) and was disclosed in Japanese Patent Application Laid-Open No. 63-2391.
The prior art is disclosed in Japanese Patent No. 97 and Japanese Patent No. 63-277766.
【０００４】特開昭６３−２３９１９７号公報の方法は
、基板にバイアス電圧を印加するものであり、水素化硼
素あるいは硼素を含む化合物と窒素あるいは窒素を含む
化合物よりなる原料の混合ガスを基材を収容した反応室
内に導入し、この反応室内に電子サイクロトロン共鳴プ
ラズマを発生させ、バイアス電圧を印加した基材に立方
晶窒化硼素を析出させている。The method disclosed in JP-A No. 63-239197 applies a bias voltage to the substrate, and uses a mixed gas of boron hydride or a boron-containing compound and nitrogen or a nitrogen-containing compound as a base material. is introduced into a reaction chamber containing a cyclotron, an electron cyclotron resonance plasma is generated in the reaction chamber, and cubic boron nitride is deposited on a substrate to which a bias voltage is applied.
【０００５】特開昭６３−２７７７６６号公報の方法は
、マイクロ波無電極放電と熱電子放射とを併用するもの
であり、硼素原子含有ガスと窒素原子含有ガスを別個に
反応系内に導入し、窒素原子含有ガスのみをマイクロ波
無電極放電中を通過させた後、硼素原子含有ガスと混合
している。そして、この混合ガスを１０００℃以上に加
熱された熱電子放射材中を通過させてから３００〜１３
００℃に加熱された基板表面に立方晶窒化硼素を析出さ
せている。この場合、硼素原子含有ガス中の硼素原子と
窒素原子含有ガス中の窒素原子数との比が０．０００１
〜１００００の範囲となっている。The method disclosed in JP-A-63-277766 uses microwave electrodeless discharge and thermionic radiation in combination, and a boron atom-containing gas and a nitrogen atom-containing gas are separately introduced into the reaction system. After passing only the nitrogen atom-containing gas through a microwave electrodeless discharge, it is mixed with the boron atom-containing gas. After passing this mixed gas through a thermionic emitting material heated to 1000°C or higher,
Cubic boron nitride is deposited on the surface of the substrate heated to 00°C. In this case, the ratio of the number of boron atoms in the boron atom-containing gas to the number of nitrogen atoms in the nitrogen atom-containing gas is 0.0001.
The range is 10,000 to 10,000.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、特開昭
６３−２３９１９７号公報の方法は、電子サイクロトロ
ン共鳴プラズマを窒化硼素の成膜に利用しているため、
磁界印加用コイル（ＥＣＲコイル）や電磁石などを必要
とし、装置の構造が複雑となり、その成膜制御が面倒と
なっていた。[Problems to be Solved by the Invention] However, since the method disclosed in Japanese Patent Application Laid-Open No. 63-239197 uses electron cyclotron resonance plasma to form a film of boron nitride,
The device requires a coil for applying a magnetic field (ECR coil), an electromagnet, etc., making the structure of the device complicated and making film formation control difficult.
【０００８】また特開昭６３−２７７７６６号公報の方
法は、１０００℃以上に加熱された熱電子放射材に原料
ガスを通過させるため熱電子放射材からの不純物が膜中
に混入しやすいと共に、励起手法としてマイクロ波と熱
電子放射材を利用しているため、比較的高密度、高活性
のプラズマを発生させることは可能である反面、所望の
高い結晶性の立方晶窒化硼素を合成するにはイオンのエ
ネルギーが不十分となっていた。Furthermore, in the method of JP-A-63-277766, since the raw material gas is passed through the thermionic emitting material heated to 1000° C. or higher, impurities from the thermionic emitting material are likely to be mixed into the film. Since microwaves and thermionic emitters are used as excitation methods, it is possible to generate relatively high-density and highly active plasma, but it is difficult to synthesize cubic boron nitride with the desired high crystallinity. The ion energy was insufficient.
【０００９】このため、立方晶窒化硼素（ｃ−ＢＮ）の
みならず、六方晶窒化硼素（ｈ−ＢＮ）やａ−ＢＮが同
時に成膜していた。For this reason, not only cubic boron nitride (c-BN) but also hexagonal boron nitride (h-BN) and a-BN have been formed simultaneously.
【００１０】本発明は上記事情を考慮してなされたもの
であり、立方晶窒化硼素の成膜に有利な合成方法を提供
することを目的とする。The present invention has been made in consideration of the above circumstances, and it is an object of the present invention to provide a synthesis method advantageous for forming a film of cubic boron nitride.
【００１１】[0011]
【課題を解決するための手段】本発明の合成方法は、硼
素原子含有ガスおよび窒素原子含有ガスからなる原料ガ
スをマイクロ波無電極放電によって３００〜１３００℃
に加熱すると共に、前記基板にバイアス電圧を印加する
ことを特徴とする。この場合、前記原料ガスを前記マイ
クロ波無電極放電の直前に設けた熱フイラメントを通過
させても良い。[Means for Solving the Problems] In the synthesis method of the present invention, a raw material gas consisting of a boron atom-containing gas and a nitrogen atom-containing gas is heated at 300 to 1300°C by microwave electrodeless discharge.
The method is characterized in that a bias voltage is applied to the substrate at the same time as heating the substrate. In this case, the raw material gas may be passed through a thermal filament provided immediately before the microwave electrodeless discharge.
【００１２】0012
【作用】上記構成では、原料の混合ガスの励起法として
、マイクロ波プラズマを利用していることから空間的エ
ネルギー密度の高いプラズマを発生させることができる
ため、立方晶窒化硼素形成に有利となる。また、基板表
面にバイアス電圧をかけることでマイクロ波プラズマ中
で発生した高濃度のイオンに対して電界による運動エネ
ルギーを付与するため、立方晶窒化硼素を有利にする。
このような立方晶窒化硼素の合成において、ＰＶＤ法と
くにイオンプロセスの場合、合成に有利となり、また高
密度のプラズマを発生させることも合成に有利となって
いる。また、マイクロ波無電極放電の直前に設けた熱フ
イラメントに原料ガスを通過させる場合には、さらに高
いイオン密度と運動エネルギーを付与するため、結晶性
の高い膜を形成させることができる。[Effect] The above configuration uses microwave plasma as the excitation method for the raw material gas mixture, which makes it possible to generate plasma with high spatial energy density, which is advantageous for cubic boron nitride formation. . Further, by applying a bias voltage to the substrate surface, kinetic energy is imparted by an electric field to highly concentrated ions generated in the microwave plasma, making cubic boron nitride advantageous. In the synthesis of such cubic boron nitride, the PVD method, especially the ion process, is advantageous for the synthesis, and the generation of high-density plasma is also advantageous for the synthesis. Further, when the raw material gas is passed through a thermal filament provided immediately before the microwave electrodeless discharge, a higher ion density and kinetic energy are imparted, so that a highly crystalline film can be formed.
【００１３】[0013]
【実施例１】図１は本発明の実施例１を適用することが
できるＣＶＤ装置を示す。ＢＣｌ３ ガス供給源１と、
Ｎ２ ガス供給源２と、アシストガスとしてのＨ２ ガ
スの供給源３とがバルブ４を介して導入管５に連結され
ている。導入管５の先端部はチャンバー６に連通してお
り、チャンバー６内には基板７をセットするサセプター
８が設けられている。このチャンバー６の下部はチャン
バー６内を減圧するための排気パイプ９が設けられてい
る。
また、基板７部分のチャンバー６周囲には、マイクロ波
発振器１０に接続された放電板１１が設けられている。
この放電板１１は基板７に供給される原料ガスを無電極
放電するものであり、これにより原料ガスは３００〜１
３００℃に加熱される。さらに、サセプター８上の基板
７は直流電流１２に接続され、成膜時にバイアス電圧が
印加されるようになっている。Embodiment 1 FIG. 1 shows a CVD apparatus to which embodiment 1 of the present invention can be applied. BCl3 gas supply source 1;
A N2 gas supply source 2 and a H2 gas supply source 3 as an assist gas are connected to an inlet pipe 5 via a valve 4. The tip of the introduction tube 5 communicates with a chamber 6, and a susceptor 8 on which a substrate 7 is set is provided in the chamber 6. An exhaust pipe 9 for reducing the pressure inside the chamber 6 is provided at the lower part of the chamber 6 . Furthermore, a discharge plate 11 connected to a microwave oscillator 10 is provided around the chamber 6 in the substrate 7 portion. This discharge plate 11 is for electrodeless discharge of the raw material gas supplied to the substrate 7, and as a result, the raw material gas is
Heated to 300°C. Further, the substrate 7 on the susceptor 8 is connected to a direct current 12, so that a bias voltage is applied during film formation.
【００１４】次に本実施例による成膜を説明する。基板
７としてシリコンウエハーを使用し、チャンバー６内を
減圧して、圧力１５Ｔｏｒｒに保持した。また、直流電
源１２から−５００Ｖの直流電圧を印加して、基板７の
温度を９５０℃に加熱した、この状態で、ＢＣｌ３ ガ
ス，Ｎ２ ガス，Ｈガスの流速をそれぞれ１ｃｃ／ｍｉ
ｎ、１０ｃｃ／ｍｉｎ、１０００ｃｃ／ｍｉｎとして導
入管５からチャンバー６内に混合導入し、マイクロ波発
振器１０により発生させた２４５０ＭＨＺ の無電極放
電中を通過させた。２時間反応させたところ、基板表面
に１μｍの厚さの膜が成膜された。この膜をフーリエ変
換赤外吸収スペクトル（ＦＴ−ＩＲ）で調べたところ、
１０５０ｃｍ−１に顕著な吸収を示した。これにより、
ｃ−ＢＮ膜の形成を確認することができた。また、この
成膜中にはｈ−ＢＮあるいはａ−ＢＮがほとんど形成さ
れていなかった。Next, film formation according to this embodiment will be explained. A silicon wafer was used as the substrate 7, and the pressure inside the chamber 6 was reduced to maintain the pressure at 15 Torr. Further, a DC voltage of -500V was applied from the DC power source 12 to heat the substrate 7 to 950°C. In this state, the flow rate of BCl3 gas, N2 gas, and H gas was adjusted to 1cc/mi, respectively.
The mixture was introduced into the chamber 6 from the introduction tube 5 at a rate of 10 cc/min, 10 cc/min, and 1000 cc/min, and passed through an electrodeless discharge of 2450 MHZ generated by a microwave oscillator 10. When the reaction was allowed to proceed for 2 hours, a film with a thickness of 1 μm was formed on the surface of the substrate. When this film was examined by Fourier transform infrared absorption spectrum (FT-IR),
It showed remarkable absorption at 1050 cm-1. This results in
Formation of a c-BN film could be confirmed. Further, during this film formation, almost no h-BN or a-BN was formed.
【００１５】[0015]
【実施例２】図２は本発明の実施例２を適用することが
できるＣＶＤ装置を示し、実施例１と同一の要素は同一
の符号で対応させてある。このＣＶＤ装置では原料ガス
としてＢＣｌ３ ガスとＮＨ３ ガスとを使用するもの
であり、ＮＨ３ ガス供給源１３がバルブ４を介してチ
ャンバー６に連通している。また、アシストガスとして
Ａｒガスが使用され、そのＡｒガス供給源１４がバルブ
４を介して導入管５に連結されている。さらに、サセプ
ター８上の基板７は高周波電源１５に接続され、同電源
１５により−５００Ｖの高周波電圧が印加されるように
なっている。これにより、基板７は９００℃に加熱され
ている。以上の構成に加えて、基板７直上には電源１６
に接続された熱フイラメント１７が設けられている。こ
の熱フイラメント１７は原料ガスに無電極放電を行なう
放電板１１の上方に位置しており、これにより原料ガス
は無電極放電の直前で熱電子放射が行なわれるようにな
っている。Embodiment 2 FIG. 2 shows a CVD apparatus to which Embodiment 2 of the present invention can be applied, and the same elements as in Embodiment 1 are designated by the same reference numerals. This CVD apparatus uses BCl3 gas and NH3 gas as source gases, and an NH3 gas supply source 13 communicates with the chamber 6 via a valve 4. Furthermore, Ar gas is used as an assist gas, and its Ar gas supply source 14 is connected to the introduction pipe 5 via the valve 4 . Further, the substrate 7 on the susceptor 8 is connected to a high frequency power source 15, and a high frequency voltage of -500V is applied by the power source 15. As a result, the substrate 7 is heated to 900°C. In addition to the above configuration, a power supply 16 is installed directly above the board 7.
A thermal filament 17 is provided which is connected to. This thermal filament 17 is located above the discharge plate 11 which performs electrodeless discharge on the raw material gas, so that thermionic emission is performed on the raw material gas immediately before the electrodeless discharge.
【００１６】上記構成において、チャンバー６内を圧力
１０Ｔｏｒｒに減圧すると共に、マイクロ波発振器１０
により２４５０ＭＨＺ の無電極放電中を行い、さらに
熱フイラメント１７を８００℃に加熱した状態とし、基
板７としてのシリコンウエハーを９００℃に加熱する。
そして、ＢＣｌ３ ガスの流速を２ｃｃ／ｍｉｎ、ＮＨ
３ ガス、Ａｒガスの各流速をそれぞれ２ｃｃ／ｍｉｎ
、５０ｃｃ／ｍｉｎとし、チャンバー６内に導入して、
熱フイラメント１７を通過させた後、マイクロ波発振器
１０により発生させ無電極放電中を通過させて、成膜を
行なった。２時間反応させたところ、基板表面に１．５
μｍの厚さの膜が形成された。
この膜をＦＴ−ＩＲで調べたところ、１０５０ｃｍ−１
に顕著な吸収を示し、ｃ−ＢＮ膜の選択的な形成を確認
できた。In the above configuration, the pressure inside the chamber 6 is reduced to 10 Torr, and the microwave oscillator 10 is
Electrodeless discharge was performed at 2450 MHZ, and the thermal filament 17 was heated to 800°C, and the silicon wafer as the substrate 7 was heated to 900°C. Then, the flow rate of BCl3 gas was set to 2 cc/min, and the flow rate of NH
3. Each flow rate of gas and Ar gas was set to 2 cc/min.
, 50cc/min, and introduced into the chamber 6,
After passing through the thermal filament 17, the film was formed by passing through an electrodeless discharge generated by the microwave oscillator 10. When reacted for 2 hours, 1.5
A μm thick film was formed. When this film was examined by FT-IR, it was found to be 1050cm-1
It was confirmed that a c-BN film was selectively formed.
【００１７】[0017]
【実施例３】図３は本発明の実施例３を適用することが
できるＣＶＤ装置を示し、前記各実施例と同一の要素は
同一の符号で対応させてある。このＣＶＤ装置では原料
ガスとしてＢ２ Ｈ６ ガスとＮＨ３ ガスとを使用す
るものであり、Ｂ２ Ｈ６ ガス供給源１８が導入管５
を介してチャンバー６に連結されている。そして、基板
としてＳｉＣ板を使用する一方、Ｂ２ Ｈ６ ガス、Ｎ
Ｈ３ ガスの流速を共に１ｃｃ／ｍｉｎとして、チャン
バー内に導入した。また、Ｈ２ ガスの流速を１００ｃ
ｃ／ｍｉｎとし、これらの混合ガスを９００℃に加熱さ
れた熱フイラメント１７を通過させ、その後、マイクロ
波発振器１０によって発生させた２４５０ＭＨＺ の無
電極放電中を通過させた。このとき、基板７に−４００
Ｖの直流電圧を印加して８５０℃に加熱すると共に、チ
ャンバー内の圧力を２０Ｔｏｒｒに保持した。この状態
で、１時間反応させたところ、基板表面に１μｍの厚さ
の膜が形成された。この膜をＦＴ−ＩＲで調べたところ
、１０５０ｃｍ−１に顕著な吸収を示し、ｃ−ＢＮ膜の
選択的な形成を確認できた。Embodiment 3 FIG. 3 shows a CVD apparatus to which Embodiment 3 of the present invention can be applied, and the same elements as in each of the above embodiments are designated by the same reference numerals. This CVD apparatus uses B2 H6 gas and NH3 gas as raw material gases, and the B2 H6 gas supply source 18 is connected to the inlet pipe 5.
It is connected to the chamber 6 via. Then, while using a SiC plate as a substrate, B2 H6 gas, N
H3 gas was introduced into the chamber at a flow rate of 1 cc/min. In addition, the flow rate of H2 gas was set to 100c.
c/min, and the mixed gas was passed through a thermal filament 17 heated to 900° C., and then passed through an electrodeless discharge of 2450 MHZ generated by a microwave oscillator 10. At this time, -400
A DC voltage of V was applied to heat the chamber to 850° C., and the pressure inside the chamber was maintained at 20 Torr. When the reaction was allowed to proceed for 1 hour in this state, a film with a thickness of 1 μm was formed on the surface of the substrate. When this film was examined by FT-IR, it showed remarkable absorption at 1050 cm −1 , confirming the selective formation of a c-BN film.
【００１８】[0018]
【発明の効果】本発明は原料ガスをマイクロ波無電極放
電によって加熱すると共に、基板にバイアス電圧を印加
してｃ−ＢＮ膜を形成するため、ｈ−ＢＮやａ−ＢＮを
含まないｃ−ＢＮを簡単な制御で確実に合成することが
できる。Effects of the Invention In the present invention, a c-BN film is formed by heating the raw material gas by microwave electrodeless discharge and applying a bias voltage to the substrate. BN can be reliably synthesized with simple control.
【図１】本発明の実施例１に適用されるＣＶＤ装置の側
面図。FIG. 1 is a side view of a CVD apparatus applied to Example 1 of the present invention.
【図２】本発明の実施例２に適用されるＣＶＤ装置の側
面図。FIG. 2 is a side view of a CVD apparatus applied to Example 2 of the present invention.
【図３】本発明の実施例３に適用されるＣＶＤ装置の側
面図。FIG. 3 is a side view of a CVD apparatus applied to Example 3 of the present invention.
１ ＢＣｌ３ ガス供給源 ２ Ｎ２ ガス供給源 ６ チャンバー ７ 基板 １０ マイクロ波発振器 １２ 直流電源 1 BCl3 gas supply source 2 N2 gas supply source 6 Chamber 7 Board 10 Microwave oscillator 12 DC power supply
Claims (2)
ガスを原料とし、気相化学蒸着により基板表面に窒化硼
素を析出させる方法において、前記原料ガスをマイクロ
波無電極放電によって３００〜１３００℃に加熱すると
共に、前記基板にバイアス電圧を印加することを特徴と
する立方晶窒化硼素の合成法。1. A method of depositing boron nitride on a substrate surface by vapor phase chemical vapor deposition using a boron atom-containing gas and a nitrogen atom-containing gas as raw materials, the raw material gas being heated to 300 to 1300° C. by microwave electrodeless discharge. A method for synthesizing cubic boron nitride, comprising: applying a bias voltage to the substrate.
放電の直前に設けた熱フイラメントを通過させることを
特徴とする請求項１記載の立方晶窒化硼素の合成法。2. The method for synthesizing cubic boron nitride according to claim 1, wherein the raw material gas is passed through a thermal filament provided immediately before the microwave electrodeless discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14130491A JPH04341567A (en) | 1991-05-17 | 1991-05-17 | Method for synthesizing cubic boron nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14130491A JPH04341567A (en) | 1991-05-17 | 1991-05-17 | Method for synthesizing cubic boron nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04341567A true JPH04341567A (en) | 1992-11-27 |
Family
ID=15288778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14130491A Withdrawn JPH04341567A (en) | 1991-05-17 | 1991-05-17 | Method for synthesizing cubic boron nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04341567A (en) |
-
1991
- 1991-05-17 JP JP14130491A patent/JPH04341567A/en not_active Withdrawn
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