JPH04290220A - Normal pressure cvd device - Google Patents
Normal pressure cvd deviceInfo
- Publication number
- JPH04290220A JPH04290220A JP5299391A JP5299391A JPH04290220A JP H04290220 A JPH04290220 A JP H04290220A JP 5299391 A JP5299391 A JP 5299391A JP 5299391 A JP5299391 A JP 5299391A JP H04290220 A JPH04290220 A JP H04290220A
- Authority
- JP
- Japan
- Prior art keywords
- duct
- injector head
- exhaust pressure
- wafer
- normal pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012495 reaction gas Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は常圧ＣＶＤ装置に関し、
特に未反応ガスを排気するダクトを備えた常圧ＣＶＤ装
置に関する。[Industrial Application Field] The present invention relates to an atmospheric pressure CVD apparatus.
In particular, the present invention relates to an atmospheric pressure CVD apparatus equipped with a duct for exhausting unreacted gas.
【０００２】0002
【従来の技術】従来の常圧ＣＶＤ装置は、図３の断面図
に示すように、ウェハー１をウェハー搬送機２上に乗せ
てヒーター３の上方を搬送させ、ウェハー搬送機２上の
ウェハー１が、ダクト４で囲まれたインジェクターヘッ
ド５の下を通過する際、インジェクターヘッド５から反
応ガスをウェハー１に向けて吹き付け、ウェハー１上に
ＣＶＤ膜を形成し、成膜に使用されなかった未反応ガス
６は、外部の空気流７とともにダクト４より外部に排気
されていた。このダクト４は、インジェクターヘッド５
の両側面に１対ずつ設けられ、両側のダクト４の排気圧
力は、両側同時に１箇所のバタフライバルブ８により制
御されていた。2. Description of the Related Art As shown in the cross-sectional view of FIG. When passing under the injector head 5 surrounded by the duct 4, the reactant gas is sprayed from the injector head 5 toward the wafer 1, forming a CVD film on the wafer 1, and removing unused material that was not used for film formation. The reaction gas 6 was exhausted to the outside through the duct 4 together with the external air flow 7 . This duct 4 is connected to the injector head 5
A pair of butterfly valves 8 were provided on each side of the duct 4, and the exhaust pressure of the ducts 4 on both sides was controlled by a single butterfly valve 8 on both sides simultaneously.
【０００３】0003
【発明が解決しようとする課題】上述した従来の常圧Ｃ
ＶＤ装置を用いて成膜させた場合、インジェクターヘッ
ド５の下方より吹き出た反応ガスは、ウェハー１の表面
に接触し反応するが、一部の反応ガスは未反応のまま、
未反応ガス６としてダクト４に吸い込まれる。また、外
気より大量の空気流７も吸い込まれ、ダクト４内で合流
して反応し合い、反応生成物９となり、ダクト４の内壁
に付着する。その付着の具合いは、インジェクターヘッ
ド５の両側面のそれぞれのダクト４で不均一なため、単
一のバタフライバルブ８による制御では十分な制御が不
可能であり、さらに、インジェクーターヘッド５の下方
より吹き出る反応ガスと外気との間を、単一のダクト４
で仕切っているため、外気の圧力変動を受けやすくなり
、ダクト４の排気圧制御が外乱に追従出来なくなる。
その結果、成膜された膜厚の不均一やドーピング濃度の
不均一を招くという問題点があった。[Problem to be solved by the invention] The above-mentioned conventional normal pressure C
When a film is formed using a VD device, the reactive gas blown out from below the injector head 5 contacts and reacts with the surface of the wafer 1, but some of the reactive gas remains unreacted.
It is sucked into the duct 4 as unreacted gas 6. In addition, a larger amount of air flow 7 than the outside air is also sucked in, joins in the duct 4 and reacts with each other to form a reaction product 9, which adheres to the inner wall of the duct 4. Since the degree of adhesion is uneven in each duct 4 on both sides of the injector head 5, sufficient control is not possible with a single butterfly valve 8. A single duct 4 connects the blowing reaction gas and the outside air.
Since the duct 4 is partitioned by a wall, it becomes susceptible to pressure fluctuations in the outside air, and the exhaust pressure control of the duct 4 becomes unable to follow disturbances. As a result, there is a problem in that the thickness of the formed film becomes non-uniform and the doping concentration becomes non-uniform.
【０００４】0004
【課題を解決するための手段】本発明の常圧ＣＶＤ装置
は、インジェクターヘッドの両側面にそれぞれ複数の並
列したダクトと、その個々のダクトの排気圧力を独立に
制御する排気圧制御装置とを備えている。[Means for Solving the Problems] The atmospheric pressure CVD apparatus of the present invention includes a plurality of ducts arranged in parallel on both sides of an injector head, and an exhaust pressure control device that independently controls the exhaust pressure of each duct. We are prepared.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明する
。図１は本発明の第１の実施例の常圧ＣＶＤ装置のイン
ジェクターヘッド５及びダクト４近傍の断面図である。
ウェハー搬送機２上のウェハー１は、インジェクターヘ
ッド５の下方に来ると、ヒーター３で加熱されつつイン
ジェクターヘッド５より反応ガスを吹き付けられ、ＣＶ
Ｄ膜を成膜する。その際、未反応ガス６は外部の空気流
７とともにダクト４で排気される。ダクト４はインジェ
クターヘッド５の両側面にそれぞれ複数個並列配置され
ており、個々のダクト４内部の反応生成物９の付着具合
いにより、それぞれ独立にバタフライバルブ８を作動さ
せ、あらかじめ設定された排気圧力を保つ。また、隣り
合ったダクト４同士はその排気圧力設定を少しずつずら
し、外部、すなわち大気側へ行く程、排気圧力を大気圧
に近づけ、インジェクターヘッド５下部と外部との圧力
勾配を小さくしてある。これらの排気圧力の設定は、バ
タフライバルブ８を含む排気圧力制御装置により行ない
、その操作は手動でもよいし、また自動制御も可能であ
る。従って、常に一定の成膜時排気圧力を得ることがで
き、長期に渡るＣＶＤ膜の膜厚均一性、ドーピング濃度
均一性が得られ、さらに、何らかの外乱により、インジ
ェクターヘッド５及びダクト４付近の圧力に異常が出た
場合も、その影響を複数のダクト４により大幅に緩衝で
きる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view of the vicinity of an injector head 5 and a duct 4 of an atmospheric pressure CVD apparatus according to a first embodiment of the present invention. When the wafer 1 on the wafer transport machine 2 comes below the injector head 5, it is heated by the heater 3 and sprayed with a reaction gas from the injector head 5,
Form D film. The unreacted gases 6 are then exhausted together with the external air stream 7 in the duct 4 . A plurality of ducts 4 are arranged in parallel on both sides of the injector head 5, and depending on the degree of adhesion of reaction products 9 inside each duct 4, each butterfly valve 8 is operated independently to achieve a preset exhaust pressure. keep it. In addition, the exhaust pressure settings of adjacent ducts 4 are shifted little by little, and the closer to the outside, that is, the atmosphere, the closer the exhaust pressure is to atmospheric pressure, thereby reducing the pressure gradient between the lower part of the injector head 5 and the outside. . These exhaust pressures are set by an exhaust pressure control device including the butterfly valve 8, which can be operated manually or automatically. Therefore, it is possible to always obtain a constant exhaust pressure during film formation, and it is possible to obtain uniformity in film thickness and doping concentration of the CVD film over a long period of time. Even if an abnormality occurs, the influence can be greatly buffered by the plurality of ducts 4.
【０００６】図２は本発明の第２の実施例のインジェク
ターヘッド５及びダクト４近傍の断面図である。本実施
例では、バタフライバルブ８の代りに窒素導入口１０を
ダクト４の壁面に設け、圧力制御された窒素ガスを導入
することによりダクト４の排気圧力を制御するものであ
る。この場合、バタフライバルブ等の排気圧制御装置そ
のものに反応生成物９が付着して、その動作精度が低下
することが無いという利点がある。FIG. 2 is a sectional view of the vicinity of the injector head 5 and duct 4 of a second embodiment of the present invention. In this embodiment, a nitrogen inlet 10 is provided in the wall of the duct 4 instead of the butterfly valve 8, and the exhaust pressure of the duct 4 is controlled by introducing pressure-controlled nitrogen gas. In this case, there is an advantage that the reaction product 9 does not adhere to the exhaust pressure control device itself, such as a butterfly valve, and the operating accuracy thereof does not deteriorate.
【０００７】[0007]
【発明の効果】以上説明したように本発明は、インジェ
クターヘッドの両側面に、それぞれ複数の並列したダク
トと、その個々のダクトの排気圧力を独立に制御できる
排気圧制御装置とを有するため、個々のダクトの内壁の
反応生成物の付着具合によらず、ＣＶＤ膜成膜時に常に
一定の排気圧力を得ることができ、長期に渡るＣＶＤ膜
の膜厚均一性、及びドーピング濃度均一性が得られる。
さらに、外部すなわち大気側とインジェクター下部との
圧力勾配を小さくすることが可能となり、外部圧力の異
常の影響を大幅に緩衝できるという効果を有する。As explained above, the present invention has a plurality of parallel ducts on both sides of the injector head, and an exhaust pressure control device that can independently control the exhaust pressure of each duct. Regardless of the adhesion of reaction products on the inner walls of individual ducts, a constant exhaust pressure can always be obtained during CVD film formation, resulting in uniform thickness and doping concentration of CVD films over a long period of time. It will be done. Furthermore, it is possible to reduce the pressure gradient between the outside, that is, the atmospheric side, and the lower part of the injector, which has the effect of significantly dampening the influence of abnormal external pressure.
【図１】本発明の第１の実施例のインジェクターヘッド
及びダクト近傍の断面図である。FIG. 1 is a sectional view of the vicinity of an injector head and a duct according to a first embodiment of the present invention.
【図２】本発明の第２の実施例のインジェクターヘッド
及びダクト近傍の断面図である。FIG. 2 is a sectional view of the vicinity of an injector head and a duct according to a second embodiment of the present invention.
【図３】従来の常圧ＣＶＤ装置のインジェクターヘッド
及びダクト近傍の断面図である。FIG. 3 is a cross-sectional view of the vicinity of an injector head and duct of a conventional atmospheric pressure CVD apparatus.
１ ウェハー ２ ウェハー搬送機 ３ ヒーター ４ ダクト ５ インジェクターヘッド ６ 未反応ガス ７ 空気流 ８ バタフライバルブ ９ 反応生成物 １０ 窒素導入口 1 Wafer 2 Wafer transport machine 3 Heater 4 Duct 5 Injector head 6 Unreacted gas 7 Air flow 8 Butterfly valve 9 Reaction product 10 Nitrogen inlet
Claims (1)
により搬送されるウェハーを加熱するヒーターと、搬送
機上のウェハーに反応ガスを吹き付けるインジェクター
ヘッドとを有する常圧ＣＶＤ装置において、前記インジ
ェクターヘッドの両側面に、それぞれ並列した複数のダ
クトと、その個々のダクトの排気圧力を独立に制御する
排気圧制御装置とを備えることを特徴とする常圧ＣＶＤ
装置。1. A normal pressure CVD apparatus comprising a carrier for carrying a wafer, a heater for heating the wafer carried by the carrier, and an injector head for spraying a reaction gas onto the wafer on the carrier, wherein the injector head A normal pressure CVD comprising a plurality of parallel ducts and an exhaust pressure control device that independently controls the exhaust pressure of each duct on both sides of the
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5299391A JPH04290220A (en) | 1991-03-19 | 1991-03-19 | Normal pressure cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5299391A JPH04290220A (en) | 1991-03-19 | 1991-03-19 | Normal pressure cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04290220A true JPH04290220A (en) | 1992-10-14 |
Family
ID=12930454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5299391A Pending JPH04290220A (en) | 1991-03-19 | 1991-03-19 | Normal pressure cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04290220A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005501428A (en) * | 2001-08-24 | 2005-01-13 | アヴィザ テクノロジー インコーポレイテッド | Atmospheric pressure wafer processing reactor having internal pressure control system and method |
| JP2010121195A (en) * | 2008-11-21 | 2010-06-03 | Mitsubishi Heavy Ind Ltd | Cvd film deposition apparatus and film deposition method |
| JP2020524914A (en) * | 2017-07-21 | 2020-08-20 | 江蘇魯▲もん▼儀器有限公司Ｊｉａｎｇｓｕ Ｌｅｕｖｅｎ Ｉｎｓｔｒｕｍｍｅｎｔｓ Ｃｏ． Ｌｔｄ | Vapor corrosion cavity with adjustable internal and external pressure difference and vapor corrosion method using the same |
-
1991
- 1991-03-19 JP JP5299391A patent/JPH04290220A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005501428A (en) * | 2001-08-24 | 2005-01-13 | アヴィザ テクノロジー インコーポレイテッド | Atmospheric pressure wafer processing reactor having internal pressure control system and method |
| JP4832718B2 (en) * | 2001-08-24 | 2011-12-07 | アヴィザ テクノロジー インコーポレイテッド | Wafer processing system, chemical vapor deposition processing system and method using them |
| JP2010121195A (en) * | 2008-11-21 | 2010-06-03 | Mitsubishi Heavy Ind Ltd | Cvd film deposition apparatus and film deposition method |
| JP2020524914A (en) * | 2017-07-21 | 2020-08-20 | 江蘇魯▲もん▼儀器有限公司Ｊｉａｎｇｓｕ Ｌｅｕｖｅｎ Ｉｎｓｔｒｕｍｍｅｎｔｓ Ｃｏ． Ｌｔｄ | Vapor corrosion cavity with adjustable internal and external pressure difference and vapor corrosion method using the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19991109 |