JP3089684B2 - Atmospheric pressure CVD equipment - Google Patents
Atmospheric pressure CVD equipmentInfo
- Publication number
- JP3089684B2 JP3089684B2 JP03064233A JP6423391A JP3089684B2 JP 3089684 B2 JP3089684 B2 JP 3089684B2 JP 03064233 A JP03064233 A JP 03064233A JP 6423391 A JP6423391 A JP 6423391A JP 3089684 B2 JP3089684 B2 JP 3089684B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- heater
- nozzle
- source gas
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は常圧ＣＶＤ装置に関し、
特にウェハー上に反応ガスを吹付けるノズルを改良した
常圧ＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure CVD apparatus,
In particular, the present invention relates to a normal pressure CVD apparatus having an improved nozzle for spraying a reaction gas onto a wafer.
【０００２】[0002]
【従来の技術】従来より、酸化膜やＰＳＧ膜等の形成方
法としては加熱した半導体ウェハーに、モノシラン（Ｓ
ｉＨ4 ）や酸素（Ｏ2 ）等の原料ガスを供給し、前記半
導体ウェハー上での原料ガスの熱分解反応による気相成
長法が用いられている。図３の断面図には、この種の常
圧ＣＶＤ装置の１例が示されている。この例では、半導
体ウェハー１を半導体ウェハー積載ベルト２上に積載
し、ヒーター３上を移動させながら所定温度に加熱し、
ノズル４の下方へ導入する。このノズル４より噴出させ
た原料ガスを熱分解反応させ、半導体ウェハー１上に酸
化膜，絶縁膜を成膜させる。このノズル４は原料ガスで
ある酸素，モノシラン等を、原料ガス導入管６内で混合
させた状態でノズル４より半導体ウェハー１上に吹付け
て成膜を行ない、未反応の原料ガスはノズル４の外周に
設けられた排気口５より排気される。2. Description of the Related Art Conventionally, as a method of forming an oxide film or a PSG film, a monosilane (S
A gas phase growth method is used in which a source gas such as iH 4 ) or oxygen (O 2 ) is supplied, and a thermal decomposition reaction of the source gas on the semiconductor wafer is performed. FIG. 3 is a cross-sectional view showing one example of this type of a normal pressure CVD apparatus. In this example, the semiconductor wafer 1 is loaded on the semiconductor wafer loading belt 2 and heated to a predetermined temperature while moving on the heater 3.
It is introduced below the nozzle 4. The source gas ejected from the nozzle 4 undergoes a thermal decomposition reaction to form an oxide film and an insulating film on the semiconductor wafer 1. The nozzle 4 sprays the semiconductor gas 1 from the nozzle 4 onto the semiconductor wafer 1 in a state where oxygen, monosilane, and the like, which are source gases, are mixed in the source gas introduction pipe 6. The air is exhausted from an exhaust port 5 provided on the outer periphery of.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の常圧Ｃ
ＶＤ装置では、原料ガスである酸素とモノシランを予め
混合させた状態でノズルより半導体ウェハーに吹付ける
ため、原料ガスが半導体ウェハーに到達するまでの間の
どの段階で加熱分解反応を起こすか予測が難しく、半導
体ウェハー上での適切な成膜を制御するのが非常に困難
となる欠点があった。また、ノズル内部で混合ガスの一
部が反応し、反応生成物が付着し、ノズルの清掃頻度が
多くなり、装置稼働率の低下も起きる。さらに、原料ガ
スはほぼ常温で半導体ウェハーに吹付けられるため、そ
の際半導体ウェハーの温度低下を引起こし成膜温度制御
が困難になる欠点もあった。The above-mentioned conventional normal pressure C
In a VD system, since the raw material gas, oxygen and monosilane, are sprayed onto the semiconductor wafer from the nozzle in a pre-mixed state, it is necessary to predict at what stage until the raw material gas reaches the semiconductor wafer to cause the thermal decomposition reaction. There is a drawback that it is difficult to control appropriate film formation on a semiconductor wafer. In addition, a part of the mixed gas reacts inside the nozzle, a reaction product adheres, the frequency of cleaning the nozzle increases, and the operation rate of the apparatus decreases. Further, since the raw material gas is sprayed on the semiconductor wafer at almost normal temperature, there is a disadvantage that the temperature of the semiconductor wafer is reduced at that time, and it is difficult to control the film forming temperature.
【０００４】[0004]
【課題を解決するための手段】本発明の常圧ＣＶＤ装置
は、原料ガスである酸素とモノシランとを別々の原料ガ
ス導入管から半導体ウェハー上に吹付け、かつ酸素とモ
ノシランが半導体ウェハー上でのみ混合されるように先
端に一点方向に向けて傾きを設けたノズルと、このノズ
ルを構成する原料ガス導入管に設けられ原料ガスを所定
温度に加熱する第１のヒーターと、半導体ウェハーを所
定温度に加熱する第２のヒーターと、原料ガスの半導体
ウェハー上への到達時に半導体ウエハー温度を低下させ
ないようにただちに熱分解反応を起こすべく第１のヒー
ター及び第２のヒーターを制御する温度制御装置と、ノ
ズルと交互に設けられ未反応原料ガスと反応生成物をノ
ズル近傍より排気する排気口とを備えている。In the atmospheric pressure CVD apparatus according to the present invention, oxygen and monosilane, which are source gases, are blown onto a semiconductor wafer from separate source gas introduction pipes, and oxygen and monosilane are sprayed on the semiconductor wafer. A nozzle having a tip inclined toward one point so as to be mixed only, and a source gas provided in a source gas introduction pipe constituting
A first heater for heating to a temperature and a semiconductor wafer
A second heater for heating to a constant temperature and a semiconductor for the source gas
Reduce the temperature of the semiconductor wafer when it reaches the wafer
First heat so that the thermal decomposition reaction
A temperature control device for controlling the heater and the second heater; and an exhaust port provided alternately with the nozzle to exhaust the unreacted raw material gas and the reaction product from the vicinity of the nozzle.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【０００６】図１は本発明の実施例１の常圧ＣＶＤ装置
のノズル近傍の断面図である。FIG. 1 is a sectional view showing the vicinity of a nozzle of an atmospheric pressure CVD apparatus according to Embodiment 1 of the present invention.
【０００７】原料ガスを半導体ウェハー１上に吹出すノ
ズル４は、酸素とモノシランの原料ガス導入管６がそれ
ぞれ分離された構成となっており、ノズルより原料ガス
が吹出される以前に酸素とモノシランが反応してＳｉＯ
2 等の反応生成物が生じない様になっている。また、ノ
ズル４に原料ガスを導入する原料ガス導入管６の一部に
外周を覆う様に原料ガス加熱ヒーター７が設けられてい
る。原料ガスは、原料ガス加熱ヒーター７により原料ガ
スが半導体ウェハー１上に到達した際、半導体ウェハー
１表面の温度を低下させない様に、さらに、ただちに熱
分解反応を起こす様に加熱され、また加熱ヒーター７は
半導体ウェハー１を底部より加熱するヒーター３と共に
温度制御装置８により制御される。また、ノズル４先端
はそれぞれ一点方向に向けて傾きを設けてあり、酸素と
モノシランが半導体ウェハー１上のみで、始めて混合さ
れ反応する様になっており、半導体ウェハー１表面以外
で熱分解反応が生じない構造となっている。また、ノズ
ル４と交互に設けられた排気口５より未反応ガスやＳｉ
Ｏ2 等の反応生成物は速やかに排気され、半導体ウェハ
ー１上に付着することがない。The nozzle 4 for blowing the source gas onto the semiconductor wafer 1 has a configuration in which the source gas introduction pipes 6 for oxygen and monosilane are separated from each other. Reacts with SiO
No reaction products such as 2 are produced. Further, a source gas heater 7 is provided so as to cover the outer periphery of a part of the source gas introduction pipe 6 for introducing the source gas into the nozzle 4. When the source gas reaches the semiconductor wafer 1 by the source gas heater 7, the source gas is heated so as not to lower the temperature of the surface of the semiconductor wafer 1 and to immediately cause a thermal decomposition reaction. 7 is controlled by the temperature controller 8 together with the heater 3 for heating the semiconductor wafer 1 from the bottom. Further, the tips of the nozzles 4 are inclined toward one point, respectively, so that oxygen and monosilane are mixed and reacted only on the semiconductor wafer 1 for the first time. The structure does not occur. Unreacted gas or Si is exhausted from an exhaust port 5 provided alternately with the nozzle 4.
Reaction products such as O 2 are quickly exhausted and do not adhere to the semiconductor wafer 1.
【０００８】図２は本発明の実施例２の常圧ＣＶＤ装置
のノズル近傍の断面図である。FIG. 2 is a sectional view showing the vicinity of a nozzle of an atmospheric pressure CVD apparatus according to a second embodiment of the present invention.
【０００９】本実施例では、原料ガス導入管６自体を抵
抗加熱体で製作している。この例では、原料ガス導入管
６全体にわたり加熱可能となり、原料ガスの急激な加熱
を避けることができ温度制御をより安定したものにでき
る。また外周をヒーターで覆う必要がないため、原料ガ
ス導入管６を任意の形状に加工し易くなり、全体の小型
化も可能で、常圧ＣＶＤ装置自体の小型・軽量化も期待
できる。さらに、原料ガス導入管６のメンテナンス時に
おいては、外周のヒーターの取外しの工数が省け、装置
作業者の労働時間の軽減も可能である。In this embodiment, the raw material gas introduction pipe 6 itself is made of a resistance heating element. In this example, heating can be performed over the entire raw material gas introducing pipe 6, so that rapid heating of the raw material gas can be avoided, and the temperature control can be made more stable. In addition, since it is not necessary to cover the outer periphery with a heater, the raw material gas introduction pipe 6 can be easily processed into an arbitrary shape, the entire size can be reduced, and the reduction in size and weight of the atmospheric pressure CVD apparatus itself can be expected. Further, at the time of maintenance of the raw material gas introduction pipe 6, the man-hour for removing the heater on the outer periphery can be omitted, and the working time of the apparatus operator can be reduced.
【００１０】[0010]
【発明の効果】以上説明したように本発明は、酸素とモ
ノシランを、各々予め所定温度に加熱制御した後、半導
体ウェハーの一定面積部分で各原料ガスが混合し反応す
る様に先端部分に一点方向に向けて傾きを設け、それぞ
れ独立のノズルから半導体ウェハーに吹付けるため、原
料ガスは半導体ウェハー表面に到達するまでの途中の経
路で分解反応を起こさず、半導体ウェハー表面でのみ分
解反応を起こすことが可能となる。その結果、ノズル内
部等での反応生成物の付着も抑えることができ、原料ガ
スが半導体ウェハーの表面温度を低下させることなく、
成膜温度制御が容易になり、ノズルの外側及びノズル間
に設けられた排気口よりＳｉＯ2 等の反応生成物が速や
かに排気され、半導体ウェハー表面に付着する反応生成
物が減少し、歩留りが向上するという効果がある。As described above, according to the present invention, oxygen and monosilane are each heated to a predetermined temperature in advance, and then, a single point is applied to a tip portion so that each source gas is mixed and reacted in a fixed area of the semiconductor wafer. The raw material gas does not decompose on the semiconductor wafer surface on its way until it reaches the semiconductor wafer surface because it is inclined toward the direction and is sprayed on the semiconductor wafer from independent nozzles. It becomes possible. As a result, adhesion of reaction products inside the nozzle and the like can also be suppressed, and the source gas does not lower the surface temperature of the semiconductor wafer,
The deposition temperature control becomes easy, reaction products such as SiO 2 are quickly exhausted from the exhaust ports provided outside and between the nozzles, and the reaction products adhering to the surface of the semiconductor wafer are reduced, and the yield is reduced. There is an effect of improving.
【図１】本発明の実施例１のノズル近傍の断面図であ
る。FIG. 1 is a sectional view of the vicinity of a nozzle according to a first embodiment of the present invention.
【図２】本発明の実施例２のノズル近傍の断面図であ
る。FIG. 2 is a sectional view of the vicinity of a nozzle according to a second embodiment of the present invention.
【図３】従来の常圧ＣＶＤ装置のノズル近傍の断面図で
ある。FIG. 3 is a cross-sectional view near a nozzle of a conventional atmospheric pressure CVD apparatus.
１ 半導体ウェハー ２ 半導体ウェハー積載ベルト ３ ヒーター ４ ノズル ５ 排気口 ６ 原料ガス導入管 ７ 原料ガス加熱ヒーター ８ 温度制御装置 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor wafer loading belt 3 Heater 4 Nozzle 5 Exhaust port 6 Source gas introduction pipe 7 Source gas heater 8 Temperature controller
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/316 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/316 H01L 21/31
Claims (1)
ためのノズルを備え、熱分解反応により気相成長を行な
う常圧ＣＶＤ装置において、原料ガスごとに別々に設け
られ且つそれぞれの先端を一点方向に向けて傾斜させた
原料ガス導入管からなるノズルと、各々の原料ガス導入
管に設けられ原料ガスを加熱する第１のヒーターと、半
導体ウェハーを加熱する第２のヒーターと、原料ガスの
半導体ウェハー上への到達時に半導体ウェハー温度を低
下させないようにただちに熱分解反応を起こすべく第１
のヒーター及び第２のヒーターを制御する温度制御装置
と、前記原料ガス導入管と交互に配置され未反応ガス及
び反応生成物を排気する排気口とを有することを特徴と
する常圧ＣＶＤ装置。1. An atmospheric pressure CVD apparatus having a nozzle for spraying a source gas onto a semiconductor wafer and performing a vapor phase growth by a thermal decomposition reaction is provided separately for each source gas and each tip is directed to one point. a nozzle consisting of the raw material gas introduction pipe is inclined towards the each of the raw material gas inlet
A first heater provided in the tube for heating the raw material gas;
A second heater for heating the conductor wafer,
Low semiconductor wafer temperature when reaching onto semiconductor wafer
The first to cause a thermal decomposition reaction immediately so as not to lower
A normal pressure CVD apparatus, comprising: a temperature control device for controlling the heater and the second heater; and an exhaust port alternately arranged with the source gas introduction pipe to exhaust unreacted gas and reaction products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03064233A JP3089684B2 (en) | 1991-03-28 | 1991-03-28 | Atmospheric pressure CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03064233A JP3089684B2 (en) | 1991-03-28 | 1991-03-28 | Atmospheric pressure CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04299532A JPH04299532A (en) | 1992-10-22 |
| JP3089684B2 true JP3089684B2 (en) | 2000-09-18 |
Family
ID=13252203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03064233A Expired - Fee Related JP3089684B2 (en) | 1991-03-28 | 1991-03-28 | Atmospheric pressure CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3089684B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101135048B (en) * | 2006-08-30 | 2011-08-24 | 财团法人工业技术研究院 | Plasma film coating device and method |
| CN102851650A (en) * | 2011-07-01 | 2013-01-02 | 财团法人工业技术研究院 | Spray head for coating and coating device |
-
1991
- 1991-03-28 JP JP03064233A patent/JP3089684B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101135048B (en) * | 2006-08-30 | 2011-08-24 | 财团法人工业技术研究院 | Plasma film coating device and method |
| CN102851650A (en) * | 2011-07-01 | 2013-01-02 | 财团法人工业技术研究院 | Spray head for coating and coating device |
| US8944347B2 (en) | 2011-07-01 | 2015-02-03 | Industrial Technology Research Institute | Deposition nozzle and apparatus for thin film deposition process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04299532A (en) | 1992-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20000620 |
|
| LAPS | Cancellation because of no payment of annual fees |