JP2860174B2 - Chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipmentInfo
- Publication number
- JP2860174B2 JP2860174B2 JP3766791A JP3766791A JP2860174B2 JP 2860174 B2 JP2860174 B2 JP 2860174B2 JP 3766791 A JP3766791 A JP 3766791A JP 3766791 A JP3766791 A JP 3766791A JP 2860174 B2 JP2860174 B2 JP 2860174B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- chamber
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、化学気相成長装置に関
し、特に、半導体装置の成膜プロセスで使用する化学気
相成長装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus used in a film forming process of a semiconductor device.
【０００２】[0002]
【従来の技術】図３はいわゆるポストミックスタイプの
従来の化学気相成長装置の断面側面図である。チャンバ
(1)内のウェーハステージ(2)上に設置されたウェーハ
(3)は、ウェーハステージ(2)内のヒータ(4)により加熱
される。そして、排気口(5)より排気を行いつつガスヘ
ッド(6)からはウェーハ(3)の表面に反応ガス(Ｂ)及びＯ
2ガス(Ｃ)が噴射される。ウェーハ(3)の表面には熱化学
反応により反応生成膜(Ａ)が形成される。2. Description of the Related Art FIG. 3 is a sectional side view of a so-called post-mix type conventional chemical vapor deposition apparatus. Chamber
Wafer mounted on wafer stage (2) in (1)
(3) is heated by the heater (4) in the wafer stage (2). Then, the reaction gas (B) and the oxygen (O) are discharged from the gas head (6) to the surface of the wafer (3) while exhausting air from the exhaust port (5).
Two gases (C) are injected. A reaction product film (A) is formed on the surface of the wafer (3) by a thermochemical reaction.
【０００３】[0003]
【発明が解決しようとする課題】ところが、この種の従
来の化学気相成長装置においては、反応ガス(Ｂ)及びＯ
2ガス(Ｃ)によってウェーハ(3)の表面に形成される反応
生成膜(Ａ)以外に、ウェーハステージ(2)の周辺の成膜
下限温度以上の高温部に熱化学反応によって生じた反応
生成膜(Ｆ)が付着する(図３参照)。また、成膜下限温度
以下の低温部［チャンバ(1)の天井部やウェーハステー
ジ(2)より離れている部分］には、反応ガス(Ｂ)とＯ2ガ
ス(Ｃ)の気相反応によって生じた反応生成物(Ｇ)が付着
する(図３参照)。これらの反応生成膜(Ｆ)、反応生成物
(Ｇ)は付着量が多くなると、その付着場所から剥がれ、
それがウェーハ(3)へ付着する。こうなると、製品の歩
留まり低下を招くので、定期的に装置を止めて、付着し
ている反応生成膜(Ｆ)、反応生成物(Ｇ)の除去を行わな
ければならず、装置の稼働率の低下を招くという問題点
があった。However, in this type of conventional chemical vapor deposition apparatus, the reaction gas (B) and O
By 2 gas (C) in addition to the reaction product film formed on the surface of the wafer (3) (A), the reaction product produced by the thermochemical reaction to a high temperature portion of the above film formation minimum temperature near the wafer stage (2) The film (F) adheres (see FIG. 3). In addition, a low-temperature portion below the film forming lower limit temperature [the ceiling portion of the chamber (1) or a portion distant from the wafer stage (2)] is subjected to a gas phase reaction of the reaction gas (B) and the O 2 gas (C). The resulting reaction product (G) adheres (see FIG. 3). These reaction product films (F), reaction products
(G) peels off from the place where the amount of adhesion increases,
It adheres to the wafer (3). In such a case, the yield of the product is reduced. Therefore, the apparatus must be stopped periodically to remove the attached reaction product film (F) and reaction product (G). There was a problem that it caused a decrease.
【０００４】本発明は上記のような問題点を解消するた
めになされたもので、チャンバ内に不要な反応生成膜や
反応生成物が生じない化学気相成長装置を得ることを目
的とする。The present invention has been made to solve the above problems, and has as its object to provide a chemical vapor deposition apparatus in which an unnecessary reaction product film and reaction product are not generated in a chamber.
【０００５】[0005]
【課題を解決するための手段】本発明に係る化学気相成
長装置は、反応室内で、ウェーハステージ表面に設置さ
れたウェーハを加熱しつつ、ウェーハ表面に反応ガスを
供給することにより、所望の膜を形成する化学気相成長
装置において、前記反応室の壁面を加熱する加熱手段
と、前記反応室の内壁に沿って前記ウェーハステージか
ら遠ざかる方向にエトキシ基またはメトキシ基を有する
化学種を噴出する噴射手段とを備えたことを特徴とす
る。SUMMARY OF THE INVENTION In a chemical vapor deposition apparatus according to the present invention, a desired gas is supplied to a wafer surface while heating a wafer placed on the surface of a wafer stage in a reaction chamber. In a chemical vapor deposition apparatus for forming a film, a heating means for heating a wall surface of the reaction chamber and a chemical species having an ethoxy group or a methoxy group are ejected in a direction away from the wafer stage along an inner wall of the reaction chamber. And an injection means.
【０００６】[0006]
【作用】本発明においては、チャンバの壁面を加熱する
加熱手段によりチャンバの壁面を成膜下限温度以上に加
熱し、かつ反応室の内壁に沿ってウェーハステージから
遠ざかる方向にエトキシ基またはメトキシ基を有する化
学種の蒸気を噴射する噴射手段を設け、該噴射手段から
の蒸気の流量を多くすれば、不要な反応生成膜や反応生
成物の形成を防止することができる。In the present invention, the wall of the chamber is heated to a temperature equal to or higher than the lower limit of film formation by the heating means for heating the wall of the chamber, and the ethoxy or methoxy group is formed along the inner wall of the reaction chamber in a direction away from the wafer stage. If an injection means for injecting the vapor of the chemical species is provided and the flow rate of the vapor from the injection means is increased, formation of an unnecessary reaction product film or reaction product can be prevented.
【０００７】[0007]
【実施例】図１は本発明に係る化学気相成長装置の一実
施例を示す断面側面図である。この装置はいわゆるポス
トミックスタイプのものを示している。チャンバ(1)内
のウェーハステージ(2)上に設置されたウェーハ(3)は、
ウェーハステージ(2)内のヒーター(4)により成膜下限温
度以上に加熱される。また、ヒーター(10)によりチャン
バ(1)の壁面を近傍のガス温度以上に加熱する。排気口
(5)より排気を行いつつ、ガスヘッド(6)からウェーハ
(3)の表面に反応ガス(Ｂ)(例えばＳｉＨ4)及びＯ2ガス
(Ｃ)を噴射するとウェーハ(3)上で反応が起こり、Ｓｉ
Ｏ2膜(Ａ)と反応生成物(Ｇ)が生じる。反応生成物(Ｇ)
は周辺へ拡散するが、この時、ウェーハステージ(2)や
ガスヘッド(6)の周辺部のチャンバ(1)の壁面及び排気路
内壁は、前述のように加熱されているので、流れるガス
との温度差に起因する熱泳動により反応生成物(Ｇ)の壁
面への堆積は妨げられ、装置外へ排出される。1 is a sectional side view showing an embodiment of a chemical vapor deposition apparatus according to the present invention. This device is of the so-called post-mix type. The wafer (3) installed on the wafer stage (2) in the chamber (1)
The heater (4) in the wafer stage (2) is heated to a temperature equal to or higher than the film formation lower limit temperature. The heater (10) heats the wall surface of the chamber (1) to a temperature equal to or higher than the nearby gas temperature. exhaust port
(5) Exhaust from the gas head (6)
Reaction gas (B) (eg, SiH 4 ) and O 2 gas are applied to the surface of (3).
When (C) is injected, a reaction occurs on the wafer (3) and Si
An O 2 film (A) and a reaction product (G) are generated. Reaction product (G)
At this time, the walls of the chamber (1) and the inner wall of the exhaust passage around the wafer stage (2) and the gas head (6) are heated as described above. The deposition of the reaction product (G) on the wall surface is prevented by thermophoresis caused by the temperature difference, and the reaction product (G) is discharged out of the apparatus.
【０００８】しかし、このままだと熱化学反応により反
応生成膜(Ｆ)が生じてチャンバ(1)の内壁に付着するこ
とがある。そこで、蒸気吹出口(15)からチャンバ(1)の
内壁に沿って蒸気［例えばテトラエトキシシラン(ＴＥ
ＯＳ)］(16)を吹き出させ、チャンバ(1)の内面及び排気
路壁面付近をＴＥＯＳ蒸気過剰雰囲気にすることにより
反応生成膜(Ｆ)が生じないようにすることができる。[0008] However, if this state is left as it is, a reaction product film (F) may be formed by thermochemical reaction and adhere to the inner wall of the chamber (1). Then, vapor [for example, tetraethoxysilane (TE) is supplied from the vapor outlet (15) along the inner wall of the chamber (1).
OS)] (16) is blown out, and the inner surface of the chamber (1) and the vicinity of the exhaust path wall surface are set to a TEOS vapor excess atmosphere, so that the reaction product film (F) can be prevented from being generated.
【０００９】上述のように、排気路壁面付近をＴＥＯＳ
蒸気過剰雰囲気にすることで、反応生成膜(Ｆ)が生成さ
れないことを図２のグラフを用いて説明する。図２はＳ
ｉＨ4／Ｏ2流量比１／１０の条件でのＴＥＯＳとＳｉＨ
4の流量の比と成膜成長速度との関係を示すグラフであ
る。このグラフからわかるように、ＴＥＯＳ蒸気の流量
がＳｉＨ4ガスの流量の０.５倍程度となると成膜成長速
度が急激に減少を始め、そして、ＴＥＯＳ蒸気の流量が
ＳｉＨ4ガスの流量の２倍を越えると、成膜は行われな
い。これはＳｉＨ4とＯ2の連鎖反応を加速するＯ原子を
ＴＥＯＳの中にあるエトキシ基がエタノールになること
で不活性化するためである。As described above, the vicinity of the exhaust passage wall surface is TEOS
The fact that the reaction-produced film (F) is not generated by setting the atmosphere to be excessive in vapor will be described with reference to the graph of FIG. FIG. 2 shows S
TEOS and SiH under the condition of iH 4 / O 2 flow ratio 1/10
4 is a graph showing a relationship between a flow rate ratio and a film formation growth rate. As can be seen from this graph, when the flow rate of the TEOS vapor becomes about 0.5 times the flow rate of the SiH 4 gas, the film formation growth rate starts to rapidly decrease, and the flow rate of the TEOS vapor becomes 2 times the flow rate of the SiH 4 gas. If it exceeds twice, no film is formed. This is because the O atom accelerating the chain reaction between SiH 4 and O 2 is inactivated by the ethoxy group in TEOS becoming ethanol.
【００１０】ＴＥＯＳによる反応の不活性化の効果は、
ＳｉＨ4／Ｏ2流量比が小さくなるほど大きい。従って、
反応によりＳｉＨ4が減少し、ＳｉＨ4／Ｏ2流量比の小
さくなったウェーハステージ周辺部や排気路において、
ＴＥＯＳ蒸気過剰雰囲気では、反応生成膜(Ｆ)は生成さ
れず、反応生成膜(Ｆ)がチャンバ(1)の内壁面に付着す
ることがなくなる。その結果、従来のように装置を止め
てチャンバ(1)の内壁面の掃除を行う必要がなく、装置
の稼働率が低下することがなくなる。The effect of inactivating the reaction by TEOS is as follows:
It increases as the SiH 4 / O 2 flow ratio decreases. Therefore,
SiH 4 is reduced by the reaction, and the SiH 4 / O 2 flow rate ratio is reduced around the wafer stage and the exhaust path.
In a TEOS vapor excess atmosphere, the reaction product film (F) is not generated, and the reaction product film (F) does not adhere to the inner wall surface of the chamber (1). As a result, there is no need to stop the apparatus and clean the inner wall surface of the chamber (1) as in the related art, and the operation rate of the apparatus does not decrease.
【００１１】なお、上記実施例においては、加熱手段と
してヒーター(10)を用いてチャンバ(1)の壁面を加熱す
る場合について説明したが、他の加熱手段を用いてもよ
い。また、チャンバ(1)の内壁に沿ってウェーハステー
ジ(2)から遠ざかる方向に蒸気(本実施例においてはＴＥ
ＯＳ蒸気)を吹き出すことができれば蒸気吹出口(15)の
位置や形状、個数は限定されない。更に、チャンバ(1)
内壁面に吹き付ける蒸気(16)として本実施例ではＴＥＯ
Ｓ蒸気を使用したが、蒸気はＮ2ガス等の不活性ガスを
キャリアとして加えたものであってもよい。In the above embodiment, the case where the wall of the chamber (1) is heated by using the heater (10) as the heating means has been described. However, other heating means may be used. In addition, steam (in this embodiment, TE) in the direction away from the wafer stage (2) along the inner wall of the chamber (1).
The position, shape, and number of the steam outlets (15) are not limited as long as OS vapors can be blown out. Furthermore, chamber (1)
In this embodiment, TEO is used as steam (16) to be sprayed on the inner wall surface.
Although S vapor was used, the vapor may be one obtained by adding an inert gas such as N 2 gas as a carrier.
【００１２】また、上記実施例では、ポストミックスタ
イプの装置について説明したが、反応ガス(Ｂ)とＯ2ガ
ス(Ｃ)をあらかじめ混合してウェーハ(3)の表面に噴射
するいわゆるプリミックスタイプのものであっても、本
発明は適用できる。In the above embodiment, a post-mix type apparatus has been described. However, a so-called pre-mix type apparatus in which a reaction gas (B) and an O 2 gas (C) are preliminarily mixed and sprayed onto the surface of a wafer (3). However, the present invention can be applied to such a case.
【００１３】更に、上記実施例では、反応ガス(Ｂ)がＳ
ｉＨ4ガスの場合について説明したが、ＰＨ3(ホスフィ
ン)やＢ2Ｈ6(ジボラン)を数％含むＳｉＨ4ガスでもよ
い。Further, in the above embodiment, the reaction gas (B) is S
Although the case of iH 4 gas has been described, SiH 4 gas containing PH 3 (phosphine) and B 2 H 6 (diborane) of several% may be used.
【００１４】また、吹き出すガスとして、ＴＥＯＳ蒸気
を用いて説明したが、メトキシ基またはエトキシ基を有
するガスであれば、Ｏ原子不活性化効果があり、ＴＥＯ
Ｓ蒸気と同様の反応抑制作用が期待できる。Although TEOS vapor has been described as the gas to be blown out, a gas having a methoxy group or an ethoxy group has an O atom inactivating effect, and TEO vapor is used.
The same reaction suppression effect as that of S vapor can be expected.
【００１５】以上のように、本発明によれば、反応室の
壁面を加熱する加熱手段と、反応室の内壁に沿ってウェ
ーハステージから遠ざかる方向にエトキシ基またはメト
キシ基を有する化学種を噴射する噴射手段とを設けたの
で、反応室の壁面を成膜下限温度以上に加熱し、該蒸気
の流量を多くすれば、反応室の壁面に不要な反応生成膜
や反応生成物が付着することがない。その結果、定期的
に装置を止めてチャンバの内壁面を掃除する必要がなく
なり、装置の稼働率の向上が図れるという効果がある。As described above, according to the present invention, the heating means for heating the wall surface of the reaction chamber and the chemical species having an ethoxy group or a methoxy group are jetted along the inner wall of the reaction chamber in a direction away from the wafer stage. Since the injection means is provided, if the wall surface of the reaction chamber is heated to a film formation lower limit temperature or higher and the flow rate of the vapor is increased, an unnecessary reaction product film or reaction product may adhere to the wall surface of the reaction chamber. Absent. As a result, there is no need to periodically stop the apparatus and clean the inner wall surface of the chamber, and the operation rate of the apparatus can be improved.
【図１】本発明に係る化学気相成長装置の一実施例を示
す断面側面図である。FIG. 1 is a sectional side view showing one embodiment of a chemical vapor deposition apparatus according to the present invention.
【図２】図１に示した装置の動作を説明するためのグラ
フである。FIG. 2 is a graph for explaining the operation of the device shown in FIG.
【図３】従来の化学気相成長装置を示す断面側面図であ
る。FIG. 3 is a sectional side view showing a conventional chemical vapor deposition apparatus.
１ チャンバ ２ ウェーハステージ ４ ヒーター ６ ガスヘッド 10 ヒーター 15 蒸気吹出口 16 蒸気(ＴＥＯＳ) Ｂ 反応ガス Ｃ Ｏ2ガス なお、各図中同一符号は同一または相当部分を示す。1 Chamber 2 Wafer stage 4 Heater 6 Gas head 10 Heater 15 Steam outlet 16 Steam (TEOS) B Reaction gas CO 2 gas Note that the same reference numerals in each figure indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−262530（ＪＰ，Ａ) 特開 平３−83891（ＪＰ，Ａ) 特開 平２−264424（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/205 H01L 21/31 H01L 21/285────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-262530 (JP, A) JP-A-3-83891 (JP, A) JP-A-2-264424 (JP, A) (58) Field (Int.Cl. 6 , DB name) H01L 21/205 H01L 21/31 H01L 21/285
Claims (1)
置されたウェーハを加熱しつつ、ウェーハ表面に反応ガ
スを供給することにより、所望の膜を形成する化学気相
成長装置において、前記反応室の壁面を加熱する加熱手
段と、前記反応室の内壁に沿って前記ウェーハステージ
から遠ざかる方向にエトキシ基またはメトキシ基を有す
る化学種を噴出する噴射手段とを備えたことを特徴とす
る化学気相成長装置。In a chemical vapor deposition apparatus for forming a desired film by supplying a reaction gas to a surface of a wafer while heating a wafer placed on the surface of a wafer stage in the reaction chamber, Chemical vapor deposition comprising: heating means for heating a wall surface; and injection means for emitting a chemical species having an ethoxy group or a methoxy group in a direction away from the wafer stage along an inner wall of the reaction chamber. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3766791A JP2860174B2 (en) | 1991-03-05 | 1991-03-05 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3766791A JP2860174B2 (en) | 1991-03-05 | 1991-03-05 | Chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04297030A JPH04297030A (en) | 1992-10-21 |
| JP2860174B2 true JP2860174B2 (en) | 1999-02-24 |
Family
ID=12503986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3766791A Expired - Fee Related JP2860174B2 (en) | 1991-03-05 | 1991-03-05 | Chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2860174B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3226073A3 (en) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device |
| TWI609409B (en) | 2003-10-28 | 2017-12-21 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
| TWI512335B (en) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | Light beam converter, optical illuminating apparatus, exposure device, and exposure method |
| TWI614795B (en) | 2004-02-06 | 2018-02-11 | Nikon Corporation | Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method |
| US7030959B2 (en) * | 2004-07-23 | 2006-04-18 | Nikon Corporation | Extreme ultraviolet reticle protection using gas flow thermophoresis |
| EP3232270A3 (en) | 2005-05-12 | 2017-12-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
-
1991
- 1991-03-05 JP JP3766791A patent/JP2860174B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04297030A (en) | 1992-10-21 |
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