JPH04272612A - Transparent electrode - Google Patents
Transparent electrodeInfo
- Publication number
- JPH04272612A JPH04272612A JP3115703A JP11570391A JPH04272612A JP H04272612 A JPH04272612 A JP H04272612A JP 3115703 A JP3115703 A JP 3115703A JP 11570391 A JP11570391 A JP 11570391A JP H04272612 A JPH04272612 A JP H04272612A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- weight
- film
- transparent
- oxide powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 21
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract description 2
- 241001101998 Galium Species 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、液晶表示素子用電極、
透明ヒーター、太陽電池等に用いられる新規な透明電極
に関するものである。[Industrial Application Field] The present invention relates to electrodes for liquid crystal display elements,
This invention relates to a new transparent electrode used in transparent heaters, solar cells, etc.
【０００２】0002
【従来の技術】可視光に対して透過率が大きく、かつ、
大きな電気伝導性を示すことが透明電極の特性である。
従来、透明電極の材料としてはＳｂをドープしたＳｎＯ
２があるが、抵抗値が高い、フォトリソグラフィによる
エッチングに難がある等の理由で、今日ではＳｎＯ２を
５〜１０重量％含有したＩｎ２Ｏ３（以下ＩＴＯという
）が主力となっている。[Prior Art] High transmittance for visible light, and
A characteristic of transparent electrodes is that they exhibit high electrical conductivity. Conventionally, the material for transparent electrodes is SnO doped with Sb.
However, today, In2O3 containing 5 to 10% by weight of SnO2 (hereinafter referred to as ITO) is the main choice because of its high resistance value and difficulty in etching by photolithography.
【０００３】このような材料を用いた透明電極は、液晶
表示素子用電極、自動車、電車、飛行機などのウインド
に用いられる透明ヒーター等日に日にその需要を増して
きている。Demand for transparent electrodes using such materials is increasing day by day, including electrodes for liquid crystal display elements and transparent heaters used in windows of automobiles, trains, airplanes, and the like.
【０００４】なかでも表示は、コンピュータやその他の
電気的機器と人間とのｉｎｔｅｒｆａｃｅであるので、
より大きく、より見易いものへと変化している。しかし
、表示が大型化するにつれ透明電極は電極間の距離が長
くなり、その抵抗値が表示の応答速度に影響を及ぼすよ
うになった。応答速度の遅れは、電極の抵抗値が高いと
一定の電圧では流れる電流が小さくなり、電荷の帯電が
遅くなることによる。[0004] Among these, displays are an interface between computers and other electrical equipment and humans, so
It has become larger and more visible. However, as displays have become larger, the distance between transparent electrodes has become longer, and the resistance value has come to affect the response speed of the display. The delay in response speed is due to the fact that if the resistance value of the electrode is high, the current that flows at a constant voltage will be small, and the charging of electric charges will be slow.
【０００５】これを防ぐには透明電極を厚くするとか金
属的にする等の手段で解決できるが、その反面、光の透
過性が悪くなり、透明電極の機能を減少せしめるという
欠点がある。[0005] This can be prevented by making the transparent electrode thicker or made of metal, but on the other hand, it has the disadvantage that the light transmittance becomes poor and the function of the transparent electrode is reduced.
【０００６】また、クリーンエネルギーとして太陽から
電気を取り出す太陽電池は、今後ますますその必要性が
増してくると思われるが、この場合も同様に、より低抵
抗の電極材質が同じようなコストでしかも透過性の劣化
がない材料として求められるようになってきている。[0006] Furthermore, it is thought that the need for solar cells that extract electricity from the sun as clean energy will increase more and more in the future, but in this case as well, it is possible to use electrode materials with lower resistance at the same cost. Moreover, it is increasingly being sought after as a material that does not deteriorate in permeability.
【０００７】透明電極薄膜の製法として主流となってい
るのは、スパッタ法やＥＢ蒸着法と呼ばれる真空中での
ガラス基板やプラスチック基板への蒸着法であるが、こ
の蒸着法によっても電極の電気抵抗率が変化する。また
、これらの蒸着法に使用される透明電極用材料も抵抗率
を変化させる一因である。The mainstream method for manufacturing transparent electrode thin films is the sputtering method or EB evaporation method, which is a method of vapor deposition on glass substrates or plastic substrates in a vacuum. Resistivity changes. Furthermore, the transparent electrode materials used in these vapor deposition methods are also a factor in changing the resistivity.
【０００８】[0008]
【発明が解決しようとする課題】本発明は、より抵抗が
低く、可視光や紫外光に対してより透過率が大きく、か
つ、フォトリソグラフィによるエッチング特性や寿命等
の物理特性の優れた新規な透明電極膜およびその電極膜
を形成するための透明電極用材料を提供しようとするも
のである。[Problems to be Solved by the Invention] The present invention provides a novel method that has lower resistance, higher transmittance to visible light and ultraviolet light, and excellent physical properties such as photolithographic etching characteristics and life span. The present invention aims to provide a transparent electrode film and a transparent electrode material for forming the electrode film.
【０００９】[0009]
【課題を解決するための手段】本発明は、透明電極膜と
して酸化インジウムをマトリックスとし、酸化スズ１〜
２０重量％、酸化ガリウム０．１〜２０重量％を含ませ
ることによって目的を達することができる。[Means for Solving the Problems] The present invention uses indium oxide as a matrix as a transparent electrode film, and tin oxide 1 to 1.
The objective can be achieved by including 20% by weight and 0.1 to 20% by weight of gallium oxide.
【００１０】また、酸化スズ粉末を１〜２０重量％、酸
化ガリウム粉末を０．１〜２０重量％含む酸化インジウ
ム粉末を焼結した透明電極蒸着用焼結体あるいは酸化ス
ズ粉末を１〜２０重量％、酸化ガリウム粉末を０．１〜
２０重量％含む酸化インジウム粉末を焼結したのち粉砕
した透明電極用粉体等の透明電極用材料を用いることに
よって、上記の透明電極膜を製造することができる。[0010] Also, a sintered body for transparent electrode deposition, which is obtained by sintering indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.1 to 20% by weight of gallium oxide powder, or 1 to 20% by weight of tin oxide powder %, gallium oxide powder from 0.1 to
The above-mentioned transparent electrode film can be manufactured by using a transparent electrode material such as a transparent electrode powder obtained by sintering and pulverizing indium oxide powder containing 20% by weight.
【００１１】透明電極蒸着用焼結体は透明電極薄膜の製
造に用いられるが、透明電極用粉体は厚膜用ペーストに
して透明電極厚膜の製造等にも用いられる。したがって
、本発明になる透明電極膜は薄膜に限らず厚膜にも適用
されるものである。[0011] The sintered body for transparent electrode deposition is used for manufacturing transparent electrode thin films, and the transparent electrode powder is also used for manufacturing thick transparent electrode films in the form of paste for thick films. Therefore, the transparent electrode film according to the present invention is applicable not only to thin films but also to thick films.
【００１２】スパッタ法によるＩＴＯ膜の製造は、Ｉｎ
とＳｎの合金ターゲットを酸素雰囲気中でＤＣスパッタ
することによっても行われている。同様に、インジウム
６０〜９８．９重量％、スズ１〜２０重量％、ガリウム
０．１〜２０重量％を含む透明電極蒸着用合金を酸素雰
囲気中でＤＣスパッタすることによっても、上記の透明
電極膜を製造することができる。[0012] In the production of an ITO film by sputtering, In
It has also been carried out by DC sputtering an alloy target of and Sn in an oxygen atmosphere. Similarly, by DC sputtering an alloy for transparent electrode deposition containing 60 to 98.9% by weight of indium, 1 to 20% by weight of tin, and 0.1 to 20% by weight of gallium, the above transparent electrode Membranes can be manufactured.
【００１３】[0013]
【実施例１】Ｉｎ２Ｏ３９２重量％、ＳｎＯ２５重量％
、Ｇａ２Ｏ３３重量％の粉末を混合したものを加圧成形
し、焼結してスパッタ用ターゲットを作成した。このタ
ーゲットを用いてスパッタし、ガラス基板上に透明電極
膜を着膜した。膜厚は１２００オングストロームであっ
た。この膜をＨＣｌ３％水溶液を６０℃まで加熱した溶
液でエッチングしてパターンを形成し、透過率、抵抗率
等を測定した。[Example 1] In2O392% by weight, SnO25% by weight
A mixture of powders containing 3% by weight of Ga2O3 was press-molded and sintered to prepare a sputtering target. A transparent electrode film was deposited on a glass substrate by sputtering using this target. The film thickness was 1200 angstroms. This film was etched with a 3% HCl aqueous solution heated to 60° C. to form a pattern, and transmittance, resistivity, etc. were measured.
【００１４】その結果、光透過率は５５０ナノメートル
波長で８５％と極めて高く、電気抵抗率は６×１０−５
Ωｃｍであり、金属並みの電気抵抗率となることがわか
った。また、スパッタ中の異常放電回数についても、従
来のＩＴＯ材料に比較し約５分の１と少ないことが明か
になり、極めて効率的であることがわかった。さらに、
従来のＩＴＯ膜よりスパッタ速度を早くしても良好な膜
が得られる事がわかった。また、膜のエッチング特性も
極めて良好であることがわかった。As a result, the light transmittance is extremely high at 85% at a wavelength of 550 nanometers, and the electrical resistivity is 6 x 10-5.
Ωcm, and it was found that the electrical resistivity was comparable to that of metal. It was also revealed that the number of abnormal discharges during sputtering was about one-fifth smaller than that of conventional ITO materials, indicating that it is extremely efficient. moreover,
It was found that a good film could be obtained even if the sputtering speed was higher than that of the conventional ITO film. It was also found that the etching properties of the film were extremely good.
【００１５】[0015]
【実施例２】Ｉｎ９４．５重量％、Ｓｎ５重量％、Ｇａ
０．５重量％を約２００℃で加熱溶融し合金を造り、こ
れを鋳造したのち加工して６インチφ×５ｔの大きさの
スパッタ用ターゲットを作成した。このターゲットを用
いてスパッタし、ガラス基板上に透明電極膜を着膜した
。膜厚は１０００オングストロームであった。スパッタ
に際しては、蒸着機内にアルゴンガスと純酸素ガスを導
入した。アルゴンガスと酸素ガスの比率は体積比で８対
２の割合であった。[Example 2] In 94.5% by weight, Sn 5% by weight, Ga
0.5% by weight was heated and melted at about 200°C to create an alloy, which was cast and processed to create a sputtering target with a size of 6 inches φ x 5 tons. A transparent electrode film was deposited on a glass substrate by sputtering using this target. The film thickness was 1000 angstroms. During sputtering, argon gas and pure oxygen gas were introduced into the vapor deposition machine. The ratio of argon gas to oxygen gas was 8:2 by volume.
【００１６】この膜を大気中３００℃で２時間アニール
したのち、透過率、抵抗率等を測定した。その結果、光
透過率は５５０ナノメートル波長で８８％であり、電気
抵抗率は６×１０−５Ωｃｍであり、極めて優れた膜質
であることがわかった。After this film was annealed in the atmosphere at 300° C. for 2 hours, transmittance, resistivity, etc. were measured. As a result, it was found that the light transmittance was 88% at a wavelength of 550 nanometers, and the electrical resistivity was 6 x 10-5 Ωcm, indicating extremely excellent film quality.
【００１７】[0017]
【発明の効果】本発明においては、従来、透明電極とし
て最も広く利用されているＩＴＯ膜に比較し、抵抗率が
極めて低下し、しかも、光透過率が極めて高い特徴があ
る。また、フォトリソグラフィによるエッチング特性や
膜寿命等の物理特性が優れている特徴がある。さらに、
透明電極用材料あるいは透明電極膜の製造プロセスの変
更を必要とせず、かつ、経済性が高い利点がある。Effects of the Invention The present invention is characterized by extremely low resistivity and extremely high light transmittance compared to ITO films, which have conventionally been most widely used as transparent electrodes. Additionally, it has excellent physical properties such as photolithographic etching characteristics and film life. moreover,
It does not require any change in the transparent electrode material or the manufacturing process of the transparent electrode film, and has the advantage of being highly economical.
Claims (4)
酸化スズ１〜２０重量％、酸化ガリウム０．１〜２０重
量％を含むことを特徴とする透明電極膜。[Claim 1] Indium oxide is used as a matrix,
A transparent electrode film containing 1 to 20% by weight of tin oxide and 0.1 to 20% by weight of gallium oxide.
ガリウム粉末を０．１〜２０重量％含む酸化インジウム
粉末を焼結したことを特徴とする透明電極蒸着用焼結体
。2. A sintered body for transparent electrode deposition, characterized in that indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.1 to 20% by weight of gallium oxide powder is sintered.
ガリウム粉末を０．１〜２０重量％含む酸化インジウム
粉末を焼結したのち、粉砕したことを特徴とする透明電
極用粉体。3. A powder for a transparent electrode, characterized in that indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.1 to 20% by weight of gallium oxide powder is sintered and then pulverized.
ズ１〜２０重量％、ガリウム０．１〜２０重量％を含む
ことを特徴とする透明電極蒸着用合金。4. An alloy for transparent electrode deposition, comprising 60 to 98.9% by weight of indium, 1 to 20% by weight of tin, and 0.1 to 20% by weight of gallium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3115703A JPH04272612A (en) | 1991-02-26 | 1991-02-26 | Transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3115703A JPH04272612A (en) | 1991-02-26 | 1991-02-26 | Transparent electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04272612A true JPH04272612A (en) | 1992-09-29 |
Family
ID=14669136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3115703A Pending JPH04272612A (en) | 1991-02-26 | 1991-02-26 | Transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04272612A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998037255A1 (en) * | 1997-02-21 | 1998-08-27 | Asahi Glass Company Ltd. | Transparent conductive film, sputtering target and substrate equipped with the transparent conductive film |
| US6042752A (en) * | 1997-02-21 | 2000-03-28 | Asahi Glass Company Ltd. | Transparent conductive film, sputtering target and transparent conductive film-bonded substrate |
| JP2001307554A (en) * | 2000-04-24 | 2001-11-02 | Tosoh Corp | Transparent conductive film, its manufacturing method, and its application |
| WO2003014409A1 (en) * | 2001-08-02 | 2003-02-20 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film, and their manufacturing method |
| WO2003029512A1 (en) * | 2001-09-27 | 2003-04-10 | Idemitsu Kosan Co., Ltd. | Sputtering target and transparent electroconductive film |
| JP2005150741A (en) * | 2003-11-14 | 2005-06-09 | Samsung Electronics Co Ltd | Nitride light-emitting device and its manufacturing method |
| JP2006289901A (en) * | 2005-04-14 | 2006-10-26 | Asahi Glass Co Ltd | Reflection preventing film and display unit |
| WO2008139654A1 (en) * | 2007-05-11 | 2008-11-20 | Idemitsu Kosan Co., Ltd. | In-Ga-Zn-Sn TYPE OXIDE SINTER AND TARGET FOR PHYSICAL FILM DEPOSITION |
| CN102770577A (en) * | 2010-02-24 | 2012-11-07 | 出光兴产株式会社 | In-Ga-Sn oxide sintered body, target, oxide semiconductor film, and semiconductor element |
| WO2013027391A1 (en) * | 2011-08-22 | 2013-02-28 | 出光興産株式会社 | In-ga-sn based oxide sintered compact |
| JP5348132B2 (en) * | 2008-04-16 | 2013-11-20 | 住友金属鉱山株式会社 | Thin film transistor type substrate, thin film transistor type liquid crystal display device, and method of manufacturing thin film transistor type substrate |
| KR20190113857A (en) | 2017-02-01 | 2019-10-08 | 이데미쓰 고산 가부시키가이샤 | Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target |
| KR20190117528A (en) | 2017-02-22 | 2019-10-16 | 이데미쓰 고산 가부시키가이샤 | Oxide semiconductor film, thin film transistor, oxide sintered body and sputtering target |
-
1991
- 1991-02-26 JP JP3115703A patent/JPH04272612A/en active Pending
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6042752A (en) * | 1997-02-21 | 2000-03-28 | Asahi Glass Company Ltd. | Transparent conductive film, sputtering target and transparent conductive film-bonded substrate |
| WO1998037255A1 (en) * | 1997-02-21 | 1998-08-27 | Asahi Glass Company Ltd. | Transparent conductive film, sputtering target and substrate equipped with the transparent conductive film |
| JP2001307554A (en) * | 2000-04-24 | 2001-11-02 | Tosoh Corp | Transparent conductive film, its manufacturing method, and its application |
| JP4625558B2 (en) * | 2000-04-24 | 2011-02-02 | 東ソー株式会社 | Transparent conductive film, method for producing the same, and use thereof |
| WO2003014409A1 (en) * | 2001-08-02 | 2003-02-20 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film, and their manufacturing method |
| WO2003029512A1 (en) * | 2001-09-27 | 2003-04-10 | Idemitsu Kosan Co., Ltd. | Sputtering target and transparent electroconductive film |
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