JPH0543273A - Transparent electrode - Google Patents
Transparent electrodeInfo
- Publication number
- JPH0543273A JPH0543273A JP3197533A JP19753391A JPH0543273A JP H0543273 A JPH0543273 A JP H0543273A JP 3197533 A JP3197533 A JP 3197533A JP 19753391 A JP19753391 A JP 19753391A JP H0543273 A JPH0543273 A JP H0543273A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- weight
- film
- oxide powder
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Resistance Heating (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Surface Treatment Of Glass (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示素子用電極、
透明ヒーター、太陽電池等に用いられる新規な透明電極
に関するものである。FIELD OF THE INVENTION The present invention relates to an electrode for a liquid crystal display device,
The present invention relates to a novel transparent electrode used for transparent heaters, solar cells, and the like.
【０００２】[0002]
【従来の技術】可視光に対して透過率が大きく、かつ、
大きな電気伝導性を示すことが透明電極の特性である。
従来、透明電極の材料としてはＳｂをドープしたＳｎＯ
２があるが、抵抗値が高い、フォトリソグラフィによる
エッチングに難がある等の理由で、今日ではＳｎＯ２を
５〜１０重量％含有したＩｎ２Ｏ３（以下ＩＴＯとい
う）が主力となっている。2. Description of the Related Art The transmittance of visible light is high, and
It is a characteristic of the transparent electrode that it exhibits large electric conductivity.
Conventionally, as a material of the transparent electrode, SnO doped with Sb is used.
2 there is, but the resistance value is high, because such a difficulty in etching by photolithography, an In 2 O 3 containing the SnO 2 5 to 10 wt% today (hereinafter referred to as ITO) has become a mainstay .
【０００３】このような材料を用いた透明電極は、液晶
表示素子用電極、自動車、電車、飛行機などのウインド
に用いられる透明ヒーター等日に日にその需要を増して
きている。Demands for transparent electrodes using such materials are increasing day by day, such as electrodes for liquid crystal display devices and transparent heaters used for windows such as automobiles, trains and airplanes.
【０００４】なかでも表示は、コンピュータやその他の
電気的機器と人間とのｉｎｔｅｒｆａｃｅであるので、
より大きく、より見易いものへと変化している。しか
し、表示が大型化するにつれ透明電極は電極間の距離が
長くなり、その抵抗値が表示の応答速度に影響を及ぼす
ようになった。応答速度の遅れは、電極の抵抗値が高い
と一定の電圧では流れる電流が小さくなり、電荷の帯電
が遅くなることによる。Among them, the display is an interface between a human being and a computer or other electric device,
It has changed to a larger and more visible one. However, as the display becomes larger, the distance between the transparent electrodes becomes longer, and the resistance value thereof affects the response speed of the display. The delay in response speed is due to the fact that when the resistance value of the electrode is high, the current flowing at a constant voltage becomes small, and the charging of electric charges becomes slow.
【０００５】これを防ぐには透明電極を厚くするとか金
属的にする等の手段で解決できるが、その反面、光の透
過性が悪くなり、透明電極の機能を減少せしめるという
欠点がある。In order to prevent this, it is possible to solve the problem by making the transparent electrode thicker or making it metallic, but on the other hand, there is a drawback that the transparency of light is deteriorated and the function of the transparent electrode is reduced.
【０００６】また、クリーンエネルギーとして太陽から
電気を取り出す太陽電池は、今後ますますその必要性が
増してくると思われるが、この場合も同様に、より低抵
抗の電極材質が同じようなコストでしかも透過性の劣化
がない材料として求められるようになってきている。[0006] Further, it seems that the need for solar cells that take out electricity from the sun as clean energy will increase more and more in the future, but in this case as well, a lower resistance electrode material is used at a similar cost. Moreover, there is a growing demand for materials that do not deteriorate in transparency.
【０００７】透明電極薄膜の製法として主流となってい
るのは、スパッタ法やＥＢ蒸着法と呼ばれる真空中での
ガラス基板やプラスチック基板への蒸着法であるが、こ
の蒸着法によっても電極の電気抵抗率が変化する。ま
た、これらの蒸着法に使用される透明電極用材料も抵抗
率を変化させる一因である。The mainstream method for producing a transparent electrode thin film is a vapor deposition method on a glass substrate or a plastic substrate in a vacuum, which is called a sputtering method or an EB vapor deposition method. The resistivity changes. Further, the transparent electrode material used in these vapor deposition methods is also a factor in changing the resistivity.
【０００８】[0008]
【発明が解決しようとする課題】本発明者等は、より抵
抗が低く、可視光や紫外光に対してより透過率が大き
く、かつ、フォトリソグラフィによるエッチング特性や
寿命等の特性の優れた新規な透明電極膜およびその電極
膜を形成するための透明電極用材料として、平成３年２
月２６日（整理番号Ｐ９１０２−００３）、平成３年３
月１日（整理番号Ｐ９１０３−００４）特許を出願し
た。本発明は、上記発明に基づきさらに研究を重ねた結
果、新規な透明電極として見い出されたものである。DISCLOSURE OF THE INVENTION The inventors of the present invention have developed a novel resin which has a lower resistance, a higher transmittance with respect to visible light and ultraviolet light, and excellent characteristics such as etching characteristics by photolithography and life. As a transparent electrode film and a transparent electrode material for forming the electrode film,
March 26 (reference number P9102-003), March 1991
I applied for a patent on the 1st of the month (reference number P9103-004). The present invention has been found as a novel transparent electrode as a result of further research based on the above invention.
【０００９】[0009]
【課題を解決するための手段】本発明は、透明電極膜と
して酸化インジウムを主成分とし、酸化スズ１〜２０重
量％、酸化亜鉛０．０５〜５重量％を含ませることによ
って目的を達することができる。Means for Solving the Problems The present invention achieves the object by including indium oxide as a main component as a transparent electrode film, and containing 1 to 20% by weight of tin oxide and 0.05 to 5% by weight of zinc oxide. You can
【００１０】また、酸化スズ粉末を１〜２０重量％、酸
化亜鉛粉末を０．０５〜５重量％含む酸化インジウム粉
末を焼結した透明電極蒸着用焼結体あるいは酸化スズ粉
末を１〜２０重量％、酸化亜鉛粉末を０．０５〜５重量
％含む酸化インジウム粉末を焼結したのち粉砕した透明
電極用粉体等の透明電極用材料を用いることによって、
上記の透明電極膜を製造することができる。Further, 1 to 20% by weight of a sintered body for vapor deposition of transparent electrodes or tin oxide powder obtained by sintering indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.05 to 5% by weight of zinc oxide powder. %, By using a transparent electrode material such as a transparent electrode powder obtained by sintering and crushing indium oxide powder containing 0.05 to 5% by weight of zinc oxide powder,
The above transparent electrode film can be manufactured.
【００１１】透明電極蒸着用焼結体は透明電極薄膜の製
造に用いられるが、透明電極用粉体は厚膜用ペーストに
して透明電極厚膜の製造等にも用いられる。したがっ
て、本発明になる透明電極膜は薄膜に限らず厚膜にも適
用されるものである。The sintered body for vapor deposition of a transparent electrode is used for producing a transparent electrode thin film, and the powder for a transparent electrode is also used as a thick film paste for producing a transparent electrode thick film. Therefore, the transparent electrode film according to the present invention is applicable not only to a thin film but also to a thick film.
【００１２】スパッタ法によるＩＴＯ膜の製造は、Ｉｎ
とＳｎの合金ターゲットを酸素雰囲気中でＤＣスパッタ
することによっても行われている。同様に、インジウム
６０〜９８．９重量％、スズ１〜２０重量％、亜鉛０．
１〜２０重量％を含む透明電極蒸着用合金を酸素雰囲気
中でＤＣスパッタすることによっても、上記の透明電極
膜を製造することができる。The ITO film is manufactured by the sputtering method using In
It is also carried out by DC sputtering an alloy target of Sn and Sn in an oxygen atmosphere. Similarly, 60 to 98.9% by weight of indium, 1 to 20% by weight of tin, and 0.
The transparent electrode film can also be manufactured by DC sputtering an alloy for vapor deposition of a transparent electrode containing 1 to 20% by weight in an oxygen atmosphere.
【００１３】[0013]
【実施例１】Ｉｎ２Ｏ３９４重量％、ＳｎＯ２５重量
％、ＺｎＯ１重量％の粉末を混合したものを加圧成形
し、焼結してスパッタ用ターゲットを作成した。このタ
ーゲットを用いてスパッタし、ガラス基板上に透明電極
膜を着膜した。膜厚は１０００オングストロームであっ
た。この膜をＨＣｌ３％水溶液を６０℃まで加熱した溶
液でエッチングしてパターンを形成し、透過率、抵抗率
等を測定した。Example 1 A mixture of powders of 94% by weight of In 2 O 3 , 5% by weight of SnO 2 and 1% by weight of ZnO was pressure-molded and sintered to prepare a sputtering target. Sputtering was performed using this target to deposit a transparent electrode film on the glass substrate. The film thickness was 1000 Å. This film was etched with a solution obtained by heating a 3% HCl aqueous solution to 60 ° C. to form a pattern, and the transmittance, resistivity, etc. were measured.
【００１４】その結果、光透過率は５５０ナノメートル
波長で９０％と極めて高く、電気抵抗率は１．５×１０
−４Ωｃｍであり、金属並みの電気抵抗率となることが
わかつた。また、スパッタ中の異常放電回数について
も、従来のＩＴＯ材料に比較し約５分の１と少ないこと
が明かになり、極めて効率的であることがわかった。さ
らに、従来のＩＴＯ膜よりスパッタ速度を早くしても良
好な膜が得られることがわかった。また、膜のエッチン
グ特性も極めて良好であることがわかった。As a result, the light transmittance was extremely high at 90% at a wavelength of 550 nanometers, and the electric resistivity was 1.5 × 10 5.
It was -4 Ωcm, and it was found that the electrical resistivity was comparable to that of metal. Also, it was revealed that the number of abnormal discharges during sputtering was about one fifth of that of the conventional ITO material, which was extremely efficient. Further, it was found that a good film can be obtained even if the sputtering rate is higher than that of the conventional ITO film. It was also found that the etching characteristics of the film were extremely good.
【００１５】[0015]
【実施例２】Ｉｎ９４重量％、Ｓｎ５重量％、Ｚｎ１重
量％を約２００℃で加熱溶融し合金を造り、これを鋳造
したのち加工して６インチφ×５ｔの大きさのスパッタ
用ターゲットを作成した。ただし、ＺｎはＳｎの中にあ
らかじめ溶融させておいた合金を用いてＺｎの溶融を容
易にした。このターゲットを用いてスパッタし、ガラス
基板上に透明電極膜を着膜した。膜厚は８００オングス
トロームであった。スパッタに際しては、蒸着機内にア
ルゴンガスと純酸素ガスを導入した。アルゴンガスと酸
素ガスの比率は体積比で８対２の割合であった。[Example 2] 94 wt% In, 5 wt% Sn, and 1 wt% Zn were heated and melted at about 200 ° C to produce an alloy, which was cast and then processed to prepare a sputtering target of 6 inches φ x 5 t. did. However, Zn used an alloy previously melted in Sn to facilitate the melting of Zn. Sputtering was performed using this target to deposit a transparent electrode film on the glass substrate. The film thickness was 800 Å. At the time of sputtering, argon gas and pure oxygen gas were introduced into the vapor deposition machine. The volume ratio of argon gas to oxygen gas was 8: 2.
【００１６】この膜を大気中３００℃で２時間アニール
したのち、透過率、抵抗率等を測定した。その結果、光
透過率は５５０ナノメートル波長で９０％であり、電気
抵抗率は１．３×１０−４Ωｃｍであり、極めて優れた
膜質であることがわかった。After this film was annealed at 300 ° C. for 2 hours in the atmosphere, the transmittance and the resistivity were measured. As a result, it was found that the light transmittance was 90% at a wavelength of 550 nanometers and the electric resistivity was 1.3 × 10 −4 Ωcm, which was an extremely excellent film quality.
【００１７】[0017]
【発明の効果】本発明においては、従来、透明電極とし
て最も広く利用されているＩＴＯ膜に比較し、抵抗率が
極めて低下し、しかも、光透過率が極めて高い特徴があ
る。また、フォトリソグラフィによるエッチング特性や
膜寿命等の特性が優れている特徴がある。さらに、透明
電極用材料あるいは透明電極膜の製造プロセスの変更を
必要とせず、かつ、経済性が高い利点がある。EFFECTS OF THE INVENTION In comparison with the ITO film which has been most widely used as a transparent electrode in the past, the present invention is characterized in that the resistivity is extremely low and the light transmittance is extremely high. Further, there is a feature that the characteristics such as etching characteristics by photolithography and film life are excellent. Further, there is an advantage that the manufacturing process of the transparent electrode material or the transparent electrode film does not need to be changed and the cost is high.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ２２Ｃ 29/12 7217−4Ｋ Ｇ０２Ｆ 1/1343 9018−2Ｋ Ｇ０９Ｆ 9/30 ３３９ 7926−5Ｇ Ｈ０５Ｂ 3/03 8715−3Ｋ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location C22C 29/12 7217-4K G02F 1/1343 9018-2K G09F 9/30 339 7926-5G H05B 3 / 03 8715-3K
Claims (4)
１〜２０重量％、酸化亜鉛０．０５〜５重量％を含むこ
とを特徴とする透明電極膜。1. A transparent electrode film containing indium oxide as a main component and containing 1 to 20% by weight of tin oxide and 0.05 to 5% by weight of zinc oxide.
鉛粉末を０．０５〜５重量％含む酸化インジウム粉末を
焼結したことを特徴とする透明電極蒸着用焼結休。2. A sintering electrode for vapor deposition of a transparent electrode, comprising indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.05 to 5% by weight of zinc oxide powder.
鉛粉末を０．０５〜５重量％含む酸化インジウム粉末を
焼結したのち、粉砕したことを特徴とする透明電極用粉
体。3. A powder for a transparent electrode, which is obtained by sintering an indium oxide powder containing 1 to 20% by weight of tin oxide powder and 0.05 to 5% by weight of zinc oxide powder and then pulverizing the powder.
１〜２０重量％、亜鉛０．１〜２０重量％を含むことを
特徴とする透明電極蒸着用合金。4. An alloy for vapor deposition of transparent electrodes, comprising 60 to 98.9% by weight of indium, 1 to 20% by weight of tin, and 0.1 to 20% by weight of zinc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3197533A JPH0543273A (en) | 1991-05-07 | 1991-05-07 | Transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3197533A JPH0543273A (en) | 1991-05-07 | 1991-05-07 | Transparent electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0543273A true JPH0543273A (en) | 1993-02-23 |
Family
ID=16376052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3197533A Pending JPH0543273A (en) | 1991-05-07 | 1991-05-07 | Transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0543273A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005022953A (en) * | 2003-04-01 | 2005-01-27 | Hitachi Maxell Ltd | Complex indium oxide particle and its manufacturing method, and conductive paint, conductive coating film and conductive sheet |
| JP2005122947A (en) * | 2003-10-14 | 2005-05-12 | Pioneer Plasma Display Corp | Manufacturing method of transparent thin-film electrode, film forming device, and manufacturing method of plasma display panel and plasma display device |
| JP2008090310A (en) * | 1999-03-16 | 2008-04-17 | Lg Philips Lcd Co Ltd | Method of manufacturing thin film transistor substrate |
-
1991
- 1991-05-07 JP JP3197533A patent/JPH0543273A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008090310A (en) * | 1999-03-16 | 2008-04-17 | Lg Philips Lcd Co Ltd | Method of manufacturing thin film transistor substrate |
| JP4709816B2 (en) * | 1999-03-16 | 2011-06-29 | エルジー ディスプレイ カンパニー リミテッド | Method for manufacturing thin film transistor substrate |
| JP2005022953A (en) * | 2003-04-01 | 2005-01-27 | Hitachi Maxell Ltd | Complex indium oxide particle and its manufacturing method, and conductive paint, conductive coating film and conductive sheet |
| JP2005122947A (en) * | 2003-10-14 | 2005-05-12 | Pioneer Plasma Display Corp | Manufacturing method of transparent thin-film electrode, film forming device, and manufacturing method of plasma display panel and plasma display device |
| JP4516296B2 (en) * | 2003-10-14 | 2010-08-04 | パナソニック株式会社 | Transparent thin film electrode manufacturing method, film forming apparatus, plasma display panel manufacturing method, and plasma display apparatus manufacturing method |
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