JPH0641723A - Electric conductive transparent film - Google Patents
Electric conductive transparent filmInfo
- Publication number
- JPH0641723A JPH0641723A JP4218685A JP21868592A JPH0641723A JP H0641723 A JPH0641723 A JP H0641723A JP 4218685 A JP4218685 A JP 4218685A JP 21868592 A JP21868592 A JP 21868592A JP H0641723 A JPH0641723 A JP H0641723A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electric conductive
- conductive transparent
- substrate
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は透明導電膜に関する。FIELD OF THE INVENTION The present invention relates to a transparent conductive film.
【０００２】[0002]
【従来の技術】ＩＴＯ（Ｓｎを添加したＩｎ2 Ｏ3 ）、
ＺｎＯ、ＳｎＯ2 等の導電材料を用いた透明導電薄膜
は、液晶ディスプレイ、タッチパネル、センサ、太陽電
池における透明電極等の分野において広く用いられてお
り、今後の需要増加が予想される。透明導電薄膜の品質
は膜の比抵抗値によって決まり、例えば液晶ディスプレ
イにおいては、大面積化、表示密度の向上に伴って、よ
り比抵抗値の小さい透明導電薄膜が要求されるようにな
ってきた。他の用途においても同様に、比抵抗値をより
小さくすることが求められている。2. Description of the Related Art ITO (In 2 O 3 with Sn added),
A transparent conductive thin film using a conductive material such as ZnO or SnO 2 is widely used in the fields of liquid crystal displays, touch panels, sensors, transparent electrodes in solar cells, and the like, and demand is expected to increase in the future. The quality of the transparent conductive thin film is determined by the specific resistance value of the film. For example, in a liquid crystal display, a transparent conductive thin film having a smaller specific resistance value has been required with the increase in area and display density. . Similarly, in other applications, it is required to make the specific resistance value smaller.
【０００３】このような透明導電薄膜は従来、真空蒸着
法、イオンプレーティング法、スパッタ法などを用いて
作成されているが、いずれの場合にも、ドナーとして寄
与する酸素空孔を有効に作り出し、キャリア濃度を増加
させることが膜の低抵抗率化の重要なポイントとなって
いる。例えば、(1) 基板加熱による結晶化の方法、(2）
磁場によりプラズマを収束する方法（樋口靖、石橋暁、
スパッタリング＆プラズマプロセス研究会講演予稿集、
第５巻、３号、１９９０年）、あるいは(3) プラズマ中
に電極を設けてプラズマ活性化による結晶性（膜中の各
原子の規則的な配列）の向上を図る方法等により実施さ
れてきた。しかし、(1) の方法では、ＰＥＴ（ポリエチ
レンテレフタレート）等の樹脂製の低融点基板には応用
が不可能であり、(2) および(3) では、装置が複雑とな
り、制御性および均一性に劣るという問題があり、望ま
しい低抵抗の透明導電薄膜は未だ得られていない。Conventionally, such a transparent conductive thin film has been prepared by using a vacuum deposition method, an ion plating method, a sputtering method or the like. In any case, oxygen vacancies which contribute as a donor are effectively created. However, increasing the carrier concentration is an important point for lowering the resistivity of the film. For example, (1) crystallization method by heating the substrate, (2)
Method of focusing plasma by magnetic field (Yasuhi Higuchi, Akira Ishibashi,
Proceedings of the lectures on the Sputtering & Plasma Process Research Group,
Vol.5, No.3, 1990), or (3) A method of improving the crystallinity (regular arrangement of each atom in the film) by plasma activation by providing an electrode in plasma. It was However, the method (1) cannot be applied to a low melting point substrate made of resin such as PET (polyethylene terephthalate), and the methods (2) and (3) make the device complicated, resulting in controllability and uniformity. However, a desirable transparent conductive thin film having a low resistance has not been obtained yet.
【０００４】そこで本発明は、低い比抵抗（抵抗率）を
有する透明導電薄膜を提供することを目的とする。Therefore, an object of the present invention is to provide a transparent conductive thin film having a low specific resistance (resistivity).
【０００５】[0005]
【課題を解決するための手段】本発明の透明導電膜は、
Ｂｉ、Ｔｉ、Ｓｎ、Ｉｎ、Ｃｄ、Ｚｎ、Ｎｉ、Ｔｅ、
Ｗ、Ｍｏ、ＺｒおよびＩｒから選ばれる１種または２種
以上の金属の酸化物を少なくとも含む、単層もしくは多
層の膜であるところの透明導電膜において、さらに窒素
原子が０．１〜６０原子％含有されていることを特徴と
する。The transparent conductive film of the present invention comprises:
Bi, Ti, Sn, In, Cd, Zn, Ni, Te,
The transparent conductive film, which is a single-layer or multi-layer film containing at least one kind or two or more kinds of metal oxides selected from W, Mo, Zr and Ir, further contains 0.1 to 60 atoms of nitrogen atoms. % Is contained.
【０００６】本発明の透明導電膜は、少なくとも上記し
た金属の酸化物を含む。好ましい金属酸化物の例として
は、Ｂｉ2 Ｏ3 、ＴｉＯ2 、ＳｎＯ2 、ＣｄＯ、Ｚｎ
Ｏ、ＺｒＯ2 、ＣＴＯ系（ＣｄＳｎＯ3 、Ｃｄ2 ＳｎＯ
4 、ＣｄＳｎＯ4 ）、Ｉｎ2 Ｏ3 、ＣｄＩｎ2 Ｏ4 、Ｉ
ｎ2 ＴｅＯ6 、ＷＯ系、ＭｏＯ3 系、ＮｉＯ系、ＩｒＯ
系等が挙げられる。好ましくは上記の金属酸化物に、Ｓ
ｎ、Ｓｂ、Ｗ、Ｍｏ、Ｆ、ＡｓおよびＡｌから選ばれる
１種または２種以上を添加した複合（ドープ）相であ
る。より好ましくは、Ｓｎを添加したＩｎ2 Ｏ3 （ＩＴ
Ｏ）、Ｓｂを添加したＩｎ2 Ｏ3 、Ｗを添加したＩｎ2
Ｏ3 、Ｍｏを添加したＩｎ2 Ｏ3 、Ｓｂを添加したＳｎ
Ｏ2 、Ｆを添加したＳｎＯ2 、Ａｓを添加したＳｎ
Ｏ2 、Ａｌを添加したＳｎＯ2 （ＡＴＯ）、Ａｌを添加
したＺｎＯ（ＡＺＯ）等の複合相が挙げられる。なかで
も特に、ＩＴＯ膜、ＦやＳｂを添加したＳｎＯ2 膜、Ａ
ＴＯ膜等の複合相が好ましい。このような金属酸化物
は、単層または多層で使用することができるが、また、
上記の金属酸化物と非酸化物との多層膜を使用すること
もできる。そのような非酸化物としては、例えばＰｔ、
Ａｕ、Ａｇ、Ｃｕ、Ｎｉ等の金属、カルコゲナイド（Ｃ
ｕ2 Ｓ、ＣｄＳ、ＺｎＳ）、ＬａＢ6 、ＴｉＮ、Ｔｉ
Ｃ、ＺＮ、ＺｒＢ2 、ＨｆＮ等が挙げられる。このよう
な多層膜の例としては、Ａｕ／Ｂｉ2 Ｏ3 、ＴｉＯ2 ／
Ａｇ／ＴｉＯ2 、Ｂｉ2 Ｏ3 ／Ａｕ／Ｂｉ2 Ｏ3 、Ｓｎ
Ｏ2 ／Ａｇ／ＳｎＯ2 、ＴｉＯ2 ／ＴｉＮ、ＺｒＯ2 ／
ＴｉＮ等が挙げられる。The transparent conductive film of the present invention contains at least an oxide of the above metal. Examples of preferable metal oxides include Bi 2 O 3 , TiO 2 , SnO 2 , CdO and Zn.
O, ZrO 2 , CTO system (CdSnO 3 , Cd 2 SnO
4 , CdSnO 4 ), In 2 O 3 , CdIn 2 O 4 , I
n 2 TeO 6 , WO type, MoO 3 type, NiO type, IrO
A system etc. are mentioned. Preferably, in the above metal oxide, S
It is a composite (doped) phase in which one or more selected from n, Sb, W, Mo, F, As and Al are added. More preferably, Sn-added In 2 O 3 (IT
O), an In 2 with the addition of In 2 O 3, W added with Sb
In 2 O 3 with O 3 and Mo, Sn with Sb
O 2, F was added SnO 2, As with the addition of Sn
Examples thereof include a composite phase of O 2 , SnO 2 (ATO) added with Al, ZnO (AZO) added with Al, and the like. Among them, particularly, ITO film, SnO 2 film containing F or Sb, A
Composite phases such as TO membranes are preferred. Such metal oxides can be used in single or multiple layers, but also
It is also possible to use a multilayer film of the above metal oxide and non-oxide. Examples of such non-oxides include Pt,
Metals such as Au, Ag, Cu and Ni, chalcogenides (C
u 2 S, CdS, ZnS), LaB 6 , TiN, Ti
C, ZN, ZrB 2 , HfN and the like can be mentioned. Examples of such a multilayer film include Au / Bi 2 O 3 , TiO 2 /
Ag / TiO 2 , Bi 2 O 3 / Au / Bi 2 O 3 , Sn
O 2 / Ag / SnO 2 , TiO 2 / TiN, ZrO 2 /
TiN etc. are mentioned.
【０００７】本発明においては、このような膜にさらに
窒素原子が０．１〜６０原子％、好ましくは０．１〜４
０原子％含有されていることを特徴とする。窒素原子の
含有量がこの範囲より少なくても多くても本発明の効
果、すなわち透明導電膜の抵抗率を下げることができな
い。多すぎる場合には、含有される窒素原子が不純物と
して作用し、膜の抵抗率を低下させてしまう。In the present invention, such a film further contains 0.1 to 60 atomic%, preferably 0.1 to 4 nitrogen atoms.
It is characterized by containing 0 atomic%. If the content of nitrogen atoms is smaller or larger than this range, the effect of the present invention, that is, the resistivity of the transparent conductive film cannot be reduced. If the amount is too large, the nitrogen atoms contained act as impurities and reduce the resistivity of the film.
【０００８】本発明の透明導電膜は、スパッタ法、イオ
ンプレーティング法、ＣＶＤ法、スプレー法等の公知の
製膜法を用いて、上記した金属酸化物を原料として、窒
素酸化物含有ガスの存在下で基板上に製造することがで
きる。窒素酸化物としては、亜酸化窒素（Ｎ2 Ｏ）が特
に好ましい。このとき例えばＡｒ、Ｈｅ、Ｎｅ、Ｋｒ、
Ｘｅ等の不活性ガスが共に存在することができる。使用
するガス中における窒素酸化物ガスの量は通常１．０〜
６０体積％、好ましくは２．０〜４０体積％である。金
属酸化物原料が、金属酸化物に特定の元素を添加したも
のである場合、例えばＩＴＯの場合には、Ｉｎ2 Ｏ3 に
Ｓｎを含む化合物例えばＳｎＯ2 を混合したものを原料
として用いることができる。使用する基板としては、ガ
ラス、プラスチック、例えばポリエチレンテレフタレー
ト、ポリブチレンテレフタレート等のポリエステル、ポ
リアミド、ポリ塩化ビニル、ポリカーボネート、ポリス
チレン、ポリプロピレン、ポリエチレン等（単独重合体
の他に共重合体も含む）の基板が挙げられる。また、基
板はこれらを２種以上含む積層体であっても良い。基板
の厚さは、用途によって異なるが、通常１．０〜１００
０μｍである。製膜の際の基板温度は、基板が劣化しな
い範囲で高いほど良く、基板の材質によって決められ
る。プラスチック基板の場合には通常、室温〜１００℃
である。また、製膜の際の他の条件としては、それぞれ
の薄膜形成法における慣用の条件を用いることができ
る。The transparent conductive film of the present invention is prepared by using a known film forming method such as a sputtering method, an ion plating method, a CVD method, or a spray method, and using the above-mentioned metal oxide as a raw material to obtain a gas containing a nitrogen oxide. It can be manufactured on a substrate in the presence. Nitrogen oxide (N 2 O) is particularly preferable as the nitrogen oxide. At this time, for example, Ar, He, Ne, Kr,
An inert gas such as Xe can be present together. The amount of nitrogen oxide gas in the gas used is usually 1.0 to
It is 60% by volume, preferably 2.0 to 40% by volume. When the metal oxide raw material is a metal oxide to which a specific element is added, for example, in the case of ITO, it is preferable to use a mixture of In 2 O 3 and a compound containing Sn, for example, SnO 2. it can. The substrate to be used is a substrate made of glass, plastic, for example, polyester such as polyethylene terephthalate or polybutylene terephthalate, polyamide, polyvinyl chloride, polycarbonate, polystyrene, polypropylene, polyethylene (including a copolymer in addition to a homopolymer). Is mentioned. Further, the substrate may be a laminated body containing two or more of these. The thickness of the substrate varies depending on the application, but is usually 1.0 to 100.
It is 0 μm. The substrate temperature at the time of film formation is better as high as possible within the range where the substrate does not deteriorate, and is determined by the substrate material. For plastic substrates, usually room temperature to 100 ° C
Is. Further, as other conditions for film formation, the conditions commonly used in each thin film forming method can be used.
【０００９】本発明の透明導電膜の透明性としては、可
視光透過率で少なくとも数十％以上が必要で、実用的に
は８０％程度以上が通常要求される。導電性は、キャリ
ア濃度（キャリア電子の密度）と移動度（易動度）の積
に比例する。本発明においては、得られる膜のキャリア
濃度、移動度は高い程良いが、キャリア濃度は通常１．
０〜６．０×1021cm-3、移動度は通常４．０〜１０cm2
／Ｖ・秒である。また抵抗率は低い程よいが、四端子法
によって測定した抵抗率が３．０〜５．０×10-4Ω・cm
であるのが好ましい。The transparency of the transparent conductive film of the present invention is required to be at least several tens of percent in terms of visible light transmittance, and practically about 80% or more is usually required. The conductivity is proportional to the product of carrier concentration (density of carrier electrons) and mobility (mobility). In the present invention, the higher the carrier concentration and mobility of the obtained film, the better, but the carrier concentration is usually 1.
0-6.0 × 10 21 cm -3 , mobility is usually 4.0-10 cm 2
/ V · sec. The lower the resistivity, the better, but the resistivity measured by the four-terminal method is 3.0 to 5.0 × 10 -4 Ω · cm.
Is preferred.
【００１０】本発明の透明導電膜は、太陽電池、光セン
サ等の光電変換用途；液晶、エレクトロルミネセンス、
エレクトロクロミック、ＥＬ等の表示素子用途；建築
物、自動車、航空機、炉ののぞき窓等の各種窓の熱線反
射用途、可視光の可変遮光用途、防曇防氷用途；帯電防
止用途；タッチスイッチ用途；光通信用途等の広い分野
で使用することができる。The transparent conductive film of the present invention is used for photoelectric conversion of solar cells, photosensors, etc .; liquid crystals, electroluminescence,
Display element applications such as electrochromic and EL applications; heat ray reflection applications for various windows such as buildings, automobiles, aircraft, and peep windows of furnaces; variable light shielding applications for visible light; anti-fog / anti-ice applications; antistatic applications; touch switch applications It can be used in a wide range of fields such as optical communication applications.
【００１１】[0011]
【作用】本発明の透明導電膜は、その材質として少なく
とも金属酸化物を含む膜にさらに窒素が含まれているこ
とを特徴とする。この窒素原子は、金属酸化物中でドナ
ーとして作用している酸素原子（酸素空孔）の位置に置
き換わるので、Ｏ2-とＮ3-の価数の差（放出できる電子
の数の差）の故に、キャリア濃度が増加し、低抵抗率化
が達成されるものと推測される。The transparent conductive film of the present invention is characterized in that a film containing at least a metal oxide as its material further contains nitrogen. Since this nitrogen atom replaces the position of the oxygen atom (oxygen vacancy) acting as a donor in the metal oxide, the difference in valence between O 2− and N 3− (difference in the number of electrons that can be emitted) Therefore, it is presumed that the carrier concentration is increased and the low resistivity is achieved.
【００１２】[0012]
【実施例】以下の実施例により、本発明をさらに詳しく
説明する。実施例１〜４および比較例１〜６ 厚さ１００μｍのポリエチレンテレフタレート（以下、
ＰＥＴということがある）基板上に、直流プレーナー型
マグネトロンスパッタ装置（基板自公転型、ＵＬＶＡＣ
社製）を使用して、初期真空度：２×10-6Torr、スパッ
タガス圧：10×10-3Torr、基板温度３０℃の条件にて製
膜を行った。ターゲットとして、Ｉｎ2Ｏ3 とＳｎＯ2
粉末の焼結ターゲット（重量比９０：１０）を用いた。
なお、スパッタガスは、実施例においてはＡｒ＋Ｎ2 Ｏ
を、比較例においてはＡｒ＋Ｏ2を用いた（ガスの組成
は表１に示した）。また、製膜速度および投入電力も表
１に併記した。The present invention will be described in more detail by the following examples. Examples 1 to 4 and Comparative Examples 1 to 6 100 μm thick polyethylene terephthalate (hereinafter,
DC planer type magnetron sputtering equipment (substrate rotation / revolution type, ULVAC)
(Manufactured by Mfg. Co., Ltd.) was used to perform film formation under the conditions of initial vacuum degree: 2 × 10 −6 Torr, sputtering gas pressure: 10 × 10 −3 Torr, and substrate temperature: 30 ° C. As targets, In 2 O 3 and SnO 2
A powder sintering target (weight ratio 90:10) was used.
The sputtering gas is Ar + N 2 O in the examples.
And in Comparative Example was used Ar + O 2 (gas composition are shown in Table 1). Further, the film forming speed and the input power are also shown in Table 1.
【００１３】かくして基板上に、ＩＴＯ膜（膜厚１５０
０オングストローム）を形成した。この膜について、抵
抗率、可視光透過率、移動度、キャリア濃度および窒素
含有量を測定した。結果を表１に示す。Thus, the ITO film (film thickness 150) is formed on the substrate.
0 angstrom). The resistivity, visible light transmittance, mobility, carrier concentration and nitrogen content of this film were measured. The results are shown in Table 1.
【００１４】なお、抵抗率は四端子法により、移動度お
よびキャリア濃度はファン デルポウ(van der Pauw)法
により測定した。また、可視光透過率は波長を固定（68
0nm）した簡易な装置で測定し、ＰＥＴ基板での吸収を
差し引いた値である。窒素含有量は、オージェ電子分光
法（ＡＥＳ）および二次イオン質量分析法（ＳＩＭＳ）
を併用して定量した。The resistivity was measured by the four-terminal method, and the mobility and carrier concentration were measured by the van der Pauw method. The visible light transmittance is fixed at the wavelength (68
(0 nm), and the value obtained by subtracting the absorption on the PET substrate. Nitrogen content is determined by Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS)
Was quantified in combination.
【００１５】[0015]
【表１】 実施例５〜８および比較例７〜12 ターゲットとしてＩｎ2 Ｏ3 とＳｎＯ2 の混合粉末の代
わりに、ＺｎＯとＡｌ2 Ｏ3 粉末の焼結ターゲット（重
量比９８：２）を用い、製膜条件を表２のようにした以
外は実施例と同様にして（他の条件は同一にして）、Ｐ
ＥＴ基板上にＡＺＯ膜を形成した。[Table 1] Examples 5 to 8 and Comparative Examples 7 to 12 As a target, a sintering target of ZnO and Al 2 O 3 powder (weight ratio 98: 2) was used in place of the mixed powder of In 2 O 3 and SnO 2 to form a film. P except that the conditions are as shown in Table 2 (the other conditions are the same), P
An AZO film was formed on the ET substrate.
【００１６】かくして得られたＡＺＯ膜の膜厚は１５０
０オングストロームであった。この膜について、実施例
と同一条件で抵抗率、可視光透過率、移動度、キャリア
濃度および窒素含有量を測定した。結果を表２に示す。The thickness of the AZO film thus obtained is 150.
It was 0 angstrom. For this film, the resistivity, visible light transmittance, mobility, carrier concentration and nitrogen content were measured under the same conditions as in the examples. The results are shown in Table 2.
【００１７】[0017]
【表２】 実施例９〜12および比較例13〜15 厚さ１００μｍのＰＥＴ基板上に、アークイオン放電式
イオンプレーテイング装置を用いて、初期真空度：8.0
×10-6Torr以下、ガス圧：0.6 ×10-3Torr、基板温度３
０℃の条件にて製膜を行った。蒸着源として、Ｉｎ2 Ｏ
3 とＳｎＯ2 粉末の焼結ペレット（重量比９０：１０）
を用いた。なお、ガスは、実施例においてはＡｒ＋Ｎ2
Ｏを、比較例においてはＡｒ＋Ｏ2 を用いた（ガスの組
成は表３に示した）。また、製膜速度およびアーク電流
も表３に併記した。[Table 2] Examples 9 to 12 and Comparative Examples 13 to 15 On a PET substrate having a thickness of 100 μm, using an arc ion discharge type ion plating apparatus, an initial degree of vacuum: 8.0.
× 10 -6 Torr or less, gas pressure: 0.6 × 10 -3 Torr, substrate temperature 3
Film formation was carried out under the condition of 0 ° C. In 2 O as a vapor deposition source
Sintered pellets of 3 and SnO 2 powder (weight ratio 90:10)
Was used. The gas is Ar + N 2 in the examples.
O was used, and Ar + O 2 was used in the comparative example (the composition of the gas is shown in Table 3). The film forming speed and the arc current are also shown in Table 3.
【００１８】かくして基板上に、ＩＴＯ膜（膜厚１５０
０オングストローム）を形成した。この膜について、抵
抗率、可視光透過率、移動度、キャリア濃度および窒素
含有量を実施例１と同様にして測定した。結果を表３に
示す。Thus, the ITO film (film thickness 150) is formed on the substrate.
0 angstrom). For this film, the resistivity, visible light transmittance, mobility, carrier concentration and nitrogen content were measured in the same manner as in Example 1. The results are shown in Table 3.
【００１９】[0019]
【表３】 [Table 3]
【００２０】[0020]
【発明の効果】本発明の透明導電膜は、低抵抗であるの
で広い分野で使用でき、工業的に有用である。Since the transparent conductive film of the present invention has a low resistance, it can be used in a wide variety of fields and is industrially useful.
Claims (1)
Ｎｉ、Ｔｅ、Ｗ、Ｍｏ、ＺｒおよびＩｒから選ばれる１
種または２種以上の金属の酸化物を少なくとも含む、単
層もしくは多層の膜であるところの透明導電膜におい
て、さらに窒素原子が０．１〜６０原子％含有されてい
ることを特徴とする透明導電膜。1. Bi, Ti, Sn, In, Cd, Zn,
1 selected from Ni, Te, W, Mo, Zr and Ir
Transparent conductive film, which is a single-layer or multi-layer film containing at least one kind or two or more kinds of metal oxides, is characterized by further containing 0.1 to 60 atom% of nitrogen atoms. Conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218685A JPH0641723A (en) | 1992-07-27 | 1992-07-27 | Electric conductive transparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218685A JPH0641723A (en) | 1992-07-27 | 1992-07-27 | Electric conductive transparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0641723A true JPH0641723A (en) | 1994-02-15 |
Family
ID=16723816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4218685A Pending JPH0641723A (en) | 1992-07-27 | 1992-07-27 | Electric conductive transparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0641723A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09302284A (en) * | 1996-05-14 | 1997-11-25 | Sumitomo Metal Mining Co Ltd | Coating fluid for sunlight-screening film and sunlight-screening film made by using the same |
| JPH11181336A (en) * | 1997-09-30 | 1999-07-06 | Sumitomo Metal Mining Co Ltd | Coating fluid for permselective membrane, permselective membrane, and multi layered permselective membrane |
| JP2000096034A (en) * | 1998-09-22 | 2000-04-04 | Sumitomo Metal Mining Co Ltd | Sun radiation screening material, coating solution for sun radiation screening membrane and sun radiation screening membrane |
| JP2000169765A (en) * | 1998-12-10 | 2000-06-20 | Sumitomo Metal Mining Co Ltd | Coating solution for sunlight-shielding film and sunlight- shielding film obtained therefrom |
| JP2002231054A (en) * | 2001-02-01 | 2002-08-16 | Stanley Electric Co Ltd | Transparent electrode material and electronic element using the same |
| US6641937B1 (en) | 1999-11-11 | 2003-11-04 | Agency Of Industrial Science And Technology | Transparent conductive film and process for producing the film |
| DE10248927B4 (en) * | 2002-10-15 | 2007-02-01 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Thin-film solar cell with electrical molybdenum contact layer and manufacturing method |
| JP2014519677A (en) * | 2011-04-28 | 2014-08-14 | サン−ゴバン グラス フランス | Transparent conductor |
-
1992
- 1992-07-27 JP JP4218685A patent/JPH0641723A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09302284A (en) * | 1996-05-14 | 1997-11-25 | Sumitomo Metal Mining Co Ltd | Coating fluid for sunlight-screening film and sunlight-screening film made by using the same |
| JPH11181336A (en) * | 1997-09-30 | 1999-07-06 | Sumitomo Metal Mining Co Ltd | Coating fluid for permselective membrane, permselective membrane, and multi layered permselective membrane |
| JP2000096034A (en) * | 1998-09-22 | 2000-04-04 | Sumitomo Metal Mining Co Ltd | Sun radiation screening material, coating solution for sun radiation screening membrane and sun radiation screening membrane |
| JP2000169765A (en) * | 1998-12-10 | 2000-06-20 | Sumitomo Metal Mining Co Ltd | Coating solution for sunlight-shielding film and sunlight- shielding film obtained therefrom |
| US6641937B1 (en) | 1999-11-11 | 2003-11-04 | Agency Of Industrial Science And Technology | Transparent conductive film and process for producing the film |
| JP2002231054A (en) * | 2001-02-01 | 2002-08-16 | Stanley Electric Co Ltd | Transparent electrode material and electronic element using the same |
| DE10248927B4 (en) * | 2002-10-15 | 2007-02-01 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Thin-film solar cell with electrical molybdenum contact layer and manufacturing method |
| DE10248927C5 (en) * | 2002-10-15 | 2013-10-31 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Thin-film solar cell with electrical molybdenum contact layer and manufacturing method |
| JP2014519677A (en) * | 2011-04-28 | 2014-08-14 | サン−ゴバン グラス フランス | Transparent conductor |
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