JPH0652726B2 - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH0652726B2 JPH0652726B2 JP3004476A JP447691A JPH0652726B2 JP H0652726 B2 JPH0652726 B2 JP H0652726B2 JP 3004476 A JP3004476 A JP 3004476A JP 447691 A JP447691 A JP 447691A JP H0652726 B2 JPH0652726 B2 JP H0652726B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- temperature
- dry etching
- gas
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ドライエッチング方法
に関し，とくに、サイドエッチが極めて少なく、高い寸
法精度でエッチングすることのできる，ドライエッチン
グ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching method and, more particularly, to a dry etching method which has very little side etching and can be etched with high dimensional accuracy.
【０００２】[0002]
【従来の技術】従来の高エネルギー粒子を利用した半導
体製造プロセスにおいては、固体試料および固体材料の
温度は水温に保たれていた．2. Description of the Related Art In a conventional semiconductor manufacturing process using high-energy particles, the temperature of a solid sample and a solid material is kept at a water temperature.
【０００３】[0003]
【発明が解決しようとする課題】そのため、固体温度が
比較的高く、活性ガスと固体が容易に反応し、イオンや
電子、レーザーなどのエネルギー粒子による表面反応の
促進効果の高精度制御が困難であるという欠点があっ
た。とくに、ドライエッチングでは、プラズマ中のラジ
カル等の反応性中性粒子と固体との反応の制御が困難で
あるため、マスク下のエッチング，すなわちサイドエッ
チが大きく，高い寸法精度でエッチングを行なうのが困
難である，という問題があった。本発明の目的は、上記
従来の問題を解決し、高エネルギ粒子を固体に入射させ
てエッチングを行なう際において、高エネルギ粒子が入
射しない面での表面反応を高精度に制御して、サイドエ
ッチの少ない高精度のエッチングを行なうことのでき
る、ドライエッチング方法を提供することである。Therefore, the temperature of the solid is relatively high, the active gas and the solid easily react, and it is difficult to control the effect of promoting the surface reaction by energetic particles such as ions, electrons and lasers with high precision. There was a drawback. In particular, in dry etching, it is difficult to control the reaction between reactive neutral particles such as radicals in plasma and solids, so etching under a mask, that is, side etching is large, and etching with high dimensional accuracy is recommended. There was a problem that it was difficult. An object of the present invention is to solve the above-mentioned conventional problems, and when high energy particles are incident on a solid to perform etching, the surface reaction on the surface on which high energy particles are not incident is controlled with high accuracy to perform side etching. It is an object of the present invention to provide a dry etching method capable of performing highly accurate etching with less heat.
【０００４】[0004]
【課題を解決するための手段】上記目的は、試料（固
体）の温度を、従来より著しく低い，所定の範囲内に保
ってエッチングする手段を具備することにより，達成さ
れる。The above object can be achieved by providing a means for etching while keeping the temperature of the sample (solid) within a predetermined range, which is significantly lower than in the prior art.
【０００５】[0005]
【作用】ドライエッチングでは、エッチされる固体の水
平面に、イオンや電子等の高エネルギ−粒子と、ラジカ
ル等の中性粒子が同時に入射する。機構解析を行なった
結果、固体の水平面では、高エネルギ−粒子の照射によ
り、固体の極く表面に疑似“高温”状態が作り出され、
そのため，ガス粒子やラジカルと表面電子の反応が、大
きく活性化されてエッチングに寄与する効果のあること
がわかった。In dry etching, high energy particles such as ions and electrons and neutral particles such as radicals are simultaneously incident on the horizontal surface of the solid to be etched. As a result of the mechanism analysis, in the horizontal plane of the solid, the irradiation of high energy particles creates a pseudo "high temperature" state on the very surface of the solid.
Therefore, it was found that the reaction between gas particles or radicals and surface electrons is greatly activated and contributes to etching.
【０００６】一方、固体のサイドウオ−ルでは、ラジカ
ルと固体、およびガス分子と固体との間の反応が，冷却
された温度において起る．On the other hand, in a solid sidewall, reactions between radicals and solids, and gas molecules and solids occur at a cooled temperature.
【０００７】従って、試料（固体）を著しく低い温度に
保ってエッチングを行なうと、深さ方向におけるエッチ
ングは変わらず、上記サイドウオ−ルにおける反応がは
抑制されて、サイドエッチは小さくなる。Therefore, when the sample (solid) is etched at a remarkably low temperature, the etching in the depth direction does not change, the reaction in the side wall is suppressed, and the side etch becomes small.
【０００８】[0008]
〈実施例１〉 図１は、高周波放電平行平板型カソ−ドカップル式プラ
スマエッチング装置を示し、試料台１および対向電極２
は、冷却装置（水温以下、−１２０℃以上）を具備して
いる。冷却装置はヒ−トパイプの原理を利用したもので
あり、冷媒溜め３とパイプ４、さらに排気装置５からな
る。冷媒を変えることにより、上記温度を容易に実現す
ることができ、かつ、安定性にも優れていて、典型的に
は、１時間で設定温度±１．５℃に保持できる。Example 1 FIG. 1 shows a high frequency discharge parallel plate type cathodic couple type plasma etching apparatus, which comprises a sample stage 1 and a counter electrode 2.
Is equipped with a cooling device (water temperature or lower, −120 ° C. or higher). The cooling device uses the principle of a heat pipe, and is composed of a refrigerant reservoir 3, a pipe 4, and an exhaust device 5. By changing the refrigerant, the above temperature can be easily realized and the stability is excellent, and typically, the set temperature can be maintained at ± 1.5 ° C. in 1 hour.
【０００９】プラズマは、高周波電力を試料台１に印加
して、両電極１，２間に発生させる。ガス導入口は、ポ
−ト６である。High-frequency power is applied to the sample stage 1 to generate plasma between the electrodes 1 and 2. The gas inlet is port 6.
【００１０】本装置を用い、ＳＦ6ガスによるｐｏｌｙ
−Ｓｉのエッチングを行なった結果を図２に示す。エッ
チング条件は、ガス圧力：５×１０Ｐａ、高周波電力：
２００Ｗ（電力密度０．２Ｗ／ｍ2）であり、ｐｏｌｙ
−Ｓｉ膜（厚さ１．２μｍ）上のマスクとしては、ホト
レジスト（ＡＺ１３５０Ｊ）膜を使用した。図２は、試
料台温度とエッチング完了時におけるサイドエッチング
量（寸法シフト量：マスク端からの寸法を示す）の関係
を示した図であり、このエッチングにおいて温度を下げ
ることにより、寸法シフトが著しく小さくなることがわ
かった。しかも、図２から明らかなように、試料台の温
度が−１０℃以下になると、０℃のときにくらべて、寸
法シフト量は急激に小さくなった。Using this apparatus, poly with SF 6 gas is used.
The result of etching -Si is shown in FIG. Etching conditions are gas pressure: 5 × 10 Pa, high frequency power:
200 W (power density 0.2 W / m 2 ) and poly
A photoresist (AZ1350J) film was used as a mask on the -Si film (thickness 1.2 μm). FIG. 2 is a diagram showing the relationship between the sample stage temperature and the side etching amount (dimension shift amount: showing the dimension from the mask edge) at the time of completion of etching. By decreasing the temperature in this etching, the dimension shift is remarkably increased. It turned out to be smaller. Moreover, as is apparent from FIG. 2, when the temperature of the sample table was −10 ° C. or lower, the amount of dimensional shift became sharply smaller than that at 0 ° C.
【００１１】さらに、サイドエッチング量は、ｐｏｌｙ
−ＳｉとＳＦ6ガスプラズマの反応生成物であるＳｉＦ4
の蒸気圧が，室温での蒸気圧の１／１０以下となる温
度，すなわち、約−１０℃以下となる温度で、２０℃で
のサイドエッチング量０．８μｍの１／４以下となり，
顕著に減少した。この時、深さ方向におけるエッチング
速度ははほとんど変化せず、これは本発明の大きな特長
である。同様な現象は、ＡｌやＷ，レジストおよびＭｏ
など，他の電子材料のエッチングにおいても確認でき
た。Further, the side etching amount is poly
-SiF 4 which is a reaction product of Si and SF 6 gas plasma
The vapor pressure of 1/10 or less of the vapor pressure at room temperature, that is, at a temperature of about -10 ° C or less, it becomes 1/4 or less of the side etching amount of 0.8 µm at 20 ° C
Remarkably decreased. At this time, the etching rate in the depth direction hardly changes, which is a great feature of the present invention. Similar phenomenon is caused by Al, W, resist and Mo.
It was also confirmed by etching other electronic materials.
【００１２】すなわち、反応生成物の蒸気圧が、室温に
おける蒸気圧の１／１０以下になる温度に，試料を冷却
してエッチングすることにより、サイドエッチングを極
めて小さくすることができる。しかし、温度が低すぎる
と冷却部へのガスの吸着が起り、エッチングが不可能で
あった。このガス吸着は，導入されたガスＳＦ6の試料
温度での蒸気圧が、真空容器内のガス圧力以下になった
場合に，起ることがわかった。従って、試料の温度は、
導入されたガスの蒸気圧が、真空容器内のガス圧力以上
の蒸気圧となる温度であることが必要である。That is, side etching can be made extremely small by cooling the sample to a temperature at which the vapor pressure of the reaction product becomes 1/10 or less of the vapor pressure at room temperature and etching. However, if the temperature is too low, gas adsorption to the cooling part occurs, making etching impossible. It was found that this gas adsorption occurs when the vapor pressure of the introduced gas SF 6 at the sample temperature becomes equal to or lower than the gas pressure in the vacuum container. Therefore, the temperature of the sample is
It is necessary that the vapor pressure of the introduced gas is a temperature at which the vapor pressure becomes equal to or higher than the gas pressure in the vacuum container.
【００１３】[0013]
【発明の効果】上記範囲内の温度では、図２からわかる
ように、サイドエッチングの量は極めて小さくなり、本
発明は，高集積密度を有するＬＳＩ製造に用いられるエ
ッチング装置として、極めて優れている。As can be seen from FIG. 2, the amount of side etching becomes extremely small at temperatures within the above range, and the present invention is extremely excellent as an etching apparatus used for manufacturing LSI having a high integration density. .
【００１４】本発明は、平行平板型エッチング装置のみ
ではなく、マイクロ波エッチング装置や、イオンビ−ム
エッチング装置等、他のエッチング装置を用いた場合に
も有効である。また、真空容器自体の冷却もガスエッチ
ング反応の制御に関係があることがわかった。ただし、
この場合には、真空容器を二重構造にするなど，霧滴対
策が必要であった。The present invention is effective not only when using a parallel plate type etching apparatus, but also when using another etching apparatus such as a microwave etching apparatus or an ion beam etching apparatus. It was also found that the cooling of the vacuum container itself is related to the control of the gas etching reaction. However,
In this case, it was necessary to take measures against fog drops, such as using a double structure for the vacuum container.
【図１】本発明の実施に用いたエッチング装置の断面
図。FIG. 1 is a cross-sectional view of an etching apparatus used for implementing the present invention.
【図２】本発明の効果を示す曲線図。FIG. 2 is a curve diagram showing the effect of the present invention.
１…試料台 ２…対向電極 ３…冷媒溜め ４…パイプ ５…ポンプ ６…ガス導入孔 ７…ｒｆ電源 ８…試料 ９…排気。 1 ... Sample stand 2 ... Counter electrode 3 ... Refrigerant reservoir 4 ... Pipe 5 ... Pump 6 ... Gas introduction hole 7 ... rf power supply 8 ... Sample 9 ... Exhaust.
Claims (4)
真空容器内の所定の位置に配置し、エッチングガスのプ
ラズマを利用して上記被加工物をエッチングする方法に
おいて、上記エッチングは、上記被加工物上に形成せれ
た所望の形状を有するレジスト膜をマスクとして用い、
上記試料台の温度を−１０℃以下に保って行なわれるこ
とを特徴とするドライエッチング方法。1. A method of etching a workpiece to be etched by arranging the workpiece to be etched at a predetermined position in a vacuum container by a sample table and etching the workpiece using plasma of an etching gas. Using a resist film having a desired shape formed on the workpiece as a mask,
A dry etching method characterized in that the temperature of the sample stage is maintained at -10 ° C or lower.
は、ＳｉＦ4であることを特徴とする請求項１に記載の
ドライエッチング方法。2. The dry etching method according to claim 1, wherein the reaction product generated by the etching is SiF 4 .
とする請求項２に記載のドライエッチング方法。3. The dry etching method according to claim 2, wherein the workpiece is silicon.
特徴とする請求項２もしくは３に記載のドライエッチン
グ方法。4. The dry etching method according to claim 2, wherein the etching gas is SF 6 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004476A JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004476A JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59011945A Division JPH0614518B2 (en) | 1984-01-27 | 1984-01-27 | Surface reaction control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04211126A JPH04211126A (en) | 1992-08-03 |
| JPH0652726B2 true JPH0652726B2 (en) | 1994-07-06 |
Family
ID=11585171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3004476A Expired - Lifetime JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652726B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4381965A (en) | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4269264A (en) * | 1978-07-03 | 1981-05-26 | Water Services Of America, Inc. | Cleaning of heat exchanger tubing |
| JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
-
1991
- 1991-01-18 JP JP3004476A patent/JPH0652726B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4381965A (en) | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04211126A (en) | 1992-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0614518B2 (en) | Surface reaction control method | |
| US5593539A (en) | Plasma source for etching | |
| US6069092A (en) | Dry etching method and semiconductor device fabrication method | |
| US4190488A (en) | Etching method using noble gas halides | |
| US3971684A (en) | Etching thin film circuits and semiconductor chips | |
| US4734157A (en) | Selective and anisotropic dry etching | |
| EP0184220B1 (en) | Apparatus and method for carrying out dry etching | |
| JPS6337193B2 (en) | ||
| JP3339920B2 (en) | Method for plasma etching SiOx material and method for creating metal connection between layers in an integrated circuit | |
| JPS63141316A (en) | Low temperature dry-etching method | |
| JP2509389B2 (en) | Dry etching equipment | |
| JPH0652726B2 (en) | Dry etching method | |
| JPH0652725B2 (en) | Dry etching equipment | |
| JPS629673B2 (en) | ||
| JPH02156529A (en) | Oxide layer inclined etching method of semiconductor wafer | |
| JP2752807B2 (en) | Plasma processing equipment | |
| US5342476A (en) | Reduction of polycide residues through helium backside pressure control during dry etching | |
| JP3023931B2 (en) | Plasma processing method and apparatus | |
| JP2794963B2 (en) | Dry etching method and dry etching apparatus | |
| JPH0393224A (en) | Dry etching | |
| JPH0691041B2 (en) | Reactive sputter etching method | |
| JPS6148924A (en) | Dry etching method for metal having high fusion point | |
| JPH1116885A (en) | Dry-etching | |
| JP2516099B2 (en) | Dry etching method | |
| JPH0590217A (en) | Dry etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |