JPS60158627A - Controlling method of surface reaction - Google Patents
Controlling method of surface reactionInfo
- Publication number
- JPS60158627A JPS60158627A JP1194584A JP1194584A JPS60158627A JP S60158627 A JPS60158627 A JP S60158627A JP 1194584 A JP1194584 A JP 1194584A JP 1194584 A JP1194584 A JP 1194584A JP S60158627 A JPS60158627 A JP S60158627A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- vapor pressure
- sample
- reaction
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、固体のエツチングおよび固体表面の改質に係
り、とくに、高寸法精度の加工と改質に好適な表面反応
の制御方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to etching of solids and modification of the surface of solids, and particularly to a method of controlling surface reactions suitable for processing and modification with high dimensional accuracy.
従来の高エネルギー粒子を利用した半導体製造プロセス
においては、固体試料および固体材料の温度が水温に保
たれていたため、固体温度が比較的高く、活性ガスと固
体が容易に反応し、イオンや電子、レーザー等のエネル
ギー粒子による表面反応の促進効果の高精度制御がなか
なかできないという欠点があった。とくに、ドライエツ
チングでは、プラズマ中のラジカル等の反応性中性粒子
と固体との反応の制御が困難であり、マスク下のエツチ
ングが太くなるという欠点があった。In the conventional semiconductor manufacturing process using high-energy particles, the temperature of the solid sample and solid material was kept at water temperature, so the solid temperature was relatively high, and the active gas and solid reacted easily, causing ions, electrons, The drawback is that it is difficult to precisely control the effect of promoting surface reactions using energetic particles such as lasers. In particular, dry etching has the disadvantage that it is difficult to control the reaction between reactive neutral particles such as radicals in the plasma and the solid, and that the etching under the mask becomes thick.
本発明の目的は、高エネルギー粒子が固体へ入射させて
処理する際において、該呈ネルギー粒子が入射しない面
での表面反応を高精度に制御する方法を提供することに
ある。An object of the present invention is to provide a method for highly accurately controlling surface reactions on surfaces where energetic particles do not enter when high-energy particles are incident on a solid for treatment.
ドライエツチングでは、水平面に、イオンや電子等の高
エネルギー粒子といラジカル等の中性粒子が同時に入射
する一方、サイドウオールには、中性粒子だけが入射す
る。機栂解析から、高エネルギー粒子照射により、固体
の極く表面に、疑似″高温″状態がつくり出され、その
ため、ガス粒子やラジカルと表面電子の反応が大きく活
性化される効果があることがわかった。In dry etching, high-energy particles such as ions and electrons and neutral particles such as radicals are simultaneously incident on a horizontal surface, while only neutral particles are incident on the sidewall. Kito's analysis shows that high-energy particle irradiation creates a pseudo-high-temperature state on the very surface of a solid, which has the effect of greatly activating reactions between gas particles and radicals and surface electrons. Understood.
一方、サイドウオールでは、ラジカルと固体、ガス分子
と固体といった水冷さ扛た温度での反応が起る。On the other hand, in the sidewall, reactions occur between radicals and solids, and between gas molecules and solids, at temperatures comparable to water.
したがって、深さ方向エツチングを変えないでサイドエ
ツチングを小さくするためには、試料（固体）の温度を
下げてやれば良いことがわかった。Therefore, it was found that in order to reduce the side etching without changing the etching in the depth direction, it is sufficient to lower the temperature of the sample (solid).
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は、高周波放電平行平板型カソードカップル式プ
ラズマエツチング装置の試料台１ならびに対向電極２に
、冷却装置゛（水温以下、−１２０℃以上）を具備させ
た装置を示す。冷却装置は、ヒートパイプの原理を使用
したものであり、溶媒溜め３とパイプ４、さらに排気装
置５からなり、溶媒をかえることで、上記温度を容易実
現可能であり、安定性にも優れており、典型的には１時
間に設定温度±１．５ ℃に保持可能な装置である。FIG. 1 shows a high-frequency discharge parallel plate cathode-coupled plasma etching apparatus in which a sample stage 1 and a counter electrode 2 are equipped with a cooling device (water temperature or lower, -120 DEG C. or higher). The cooling device uses the principle of a heat pipe, and consists of a solvent reservoir 3, a pipe 4, and an exhaust device 5. By changing the solvent, the above temperature can be easily achieved, and it has excellent stability. The device is typically capable of maintaining a set temperature of ±1.5°C for one hour.
プラズマは、、ｇ周波電力を試料台１に印加し両電極間
で発生させる。ガス導入口は、ボート６である。Plasma is generated between both electrodes by applying g-frequency power to the sample stage 1. The gas inlet is the boat 6.
本装置を用い、ＳＦ６ガスによるＰｏ１ｙ −Ｓｉのエ
ツチングを行なった結果を第２図に示す。エツチング条
件は５Ｘ１０Ｐａ、高周波型カニ２００Ｗ（電力密度０
．２ Ｗ／ａ１）であり、Ｐｏ１ｙ Ｓｉ （厚さ１，
２ μｍ）のマスク材料には、ホトレジストＡｚ１３５
０Ｊを使用した。第２図は、試料台温度とエツチング完
了時のサイドエツチング量（寸法シフト量：マスク端か
らの寸法を示す）の関係を示したものであり、このエツ
ングにおいて温度を下げるにともない、寸法シフトが小
さくなることがわかった。さらに、サイドエツチング量
は、Ｐｏ１ｙ −ＳｉとＳＦ８ガスプラズマの反応生成
物であるＳｉＦ４の蒸気圧が室温での蒸気圧の１７１０
以下となる温度以下、すなわち、約−１０℃以下となる
温度で、２０℃でのサイドエツチング量０．８ μｍの
１７４以下と顕著となる。この時深さ方向へのエツチン
グ速度は変化しないという特徴がある。同様な現像は、
ＡＱやＷ、レジスト、ＭＯなど他の電子材料でも確認で
きた。すなわち、本方法においては、反応生成物の蒸気
圧が、室温での蒸気圧のｌ／１０以下となる温度に試料
を保持することにより、サイドエツチングを極めて小さ
くすることができる。しかし、温度が低すぎると冷却部
へのガスの眼差が起こり、エツチングが不可能であった
。このガス吸着は、導入するガスであるＳＦ６の試料温
度での蒸気圧が、真空容器のガス圧力以下となった場合
に起こることがわかった。FIG. 2 shows the results of etching Po1y-Si with SF6 gas using this apparatus. Etching conditions are 5X10Pa, high frequency crab 200W (power density 0
．． 2 W/a1), and PolySi (thickness 1,
2 μm) mask material is photoresist Az135.
0J was used. Figure 2 shows the relationship between the sample stage temperature and the side etching amount (dimensional shift amount: the dimension from the edge of the mask) at the end of etching. I found out that it gets smaller. Furthermore, the amount of side etching is determined by the fact that the vapor pressure of SiF4, which is a reaction product of Poly-Si and SF8 gas plasma, is 1710% of the vapor pressure at room temperature.
At a temperature below, that is, at a temperature below about -10°C, the side etching amount at 20°C is 0.8 μm, which is 174 or below, which becomes remarkable. At this time, the etching rate in the depth direction does not change. A similar development is
It was also confirmed in other electronic materials such as AQ, W, resist, and MO. That is, in this method, side etching can be extremely reduced by maintaining the sample at a temperature where the vapor pressure of the reaction product is 1/10 or less of the vapor pressure at room temperature. However, if the temperature is too low, gas leakage to the cooling part occurs, making etching impossible. It has been found that this gas adsorption occurs when the vapor pressure of SF6, which is the gas to be introduced, at the sample temperature becomes lower than the gas pressure of the vacuum container.
したがって、真空容器圧力以上の蒸気圧となる温度以上
であるとンが必要である。Therefore, the temperature must be higher than the temperature at which the vapor pressure is higher than the vacuum vessel pressure.
以上の範囲の温度では、本発明は第２図でわかるように
、サイドエツチングの量が極めて小さくでき、高集積Ｌ
ＳＩのエツチングとして優れた方法である。In the above temperature range, the amount of side etching can be extremely small, as shown in FIG.
This is an excellent method for etching SI.
本反応制御法は、マイクロ波エツチング装置やイオンビ
ームエツチング装置等の他のエツチング装置にも有効で
あり、また、真空容器自体の冷却もプラズマエツチング
反応の制御に関係があると判明した。ただし、この場合
には、２重構造など゛露滴対策が必要であった。This reaction control method is also effective for other etching apparatuses such as microwave etching apparatuses and ion beam etching apparatuses, and it has also been found that cooling of the vacuum chamber itself is also relevant to controlling the plasma etching reaction. However, in this case, measures against dew droplets, such as a double structure, were required.
本発明は、イオンビームやエレクトロビームを使ったり
ソグラフイでも有効である。リソグラフィでは、これら
のビームの横方置床がりだけの広がりに押えた高精度パ
ターン形成が可能であった。The present invention is also effective using ion beams, electrobeams, and lithography. With lithography, it was possible to form high-precision patterns by limiting the spread of these beams to only the horizontal floor space.
第１図は本発明の実施に用いたエツチング装置の断面図
、第２図は本発明の効果を示す曲線図である。
■・・・試料台（電極）、２・・・対向電極、３・・・
溶媒溜め、４・・・パイプ、５・・・ポンプ、６・・・
ガス導入孔、第 １ 図
第 ２ （２）
１） −２１） −ヂ／ −、（ρ
省入料ひ温度（Ｃ）FIG. 1 is a sectional view of an etching apparatus used to carry out the present invention, and FIG. 2 is a curve diagram showing the effects of the present invention. ■... Sample stage (electrode), 2... Counter electrode, 3...
Solvent reservoir, 4...pipe, 5...pump, 6...
Gas inlet hole, Fig. 1 Fig. 2 (2) 1) -21) -di/ -, (ρ Temperature (C)
Claims (1)
置いた固体試料に熱エネルギー以上のエネルギーを有す
る粒子が連続的もしくは間けつ的に入射し、該固体表面
にエツチングおよび固体表面の改質をおこなう系におい
て、該固体試料を該雰囲気ガスと該固体試料との反応に
よる生成物の少なくとも一種類の安全なガス状反応生成
物が、その生成物の室温における蒸気圧の１／１０以下
の蒸気圧となる温度以下に保持し、かつ、その温度での
該雰囲気ガス蒸気圧が真空容器圧力以下とならない状態
で処理を行なうことを特徴とする表面反応の制御方法。 ２、特許請求の範囲第１項記載の表面反応の制御方法に
において、固体表面温度の制御にビーｌ−パイプを使う
ことを特徴とした表面反応の制御方法。[Claims] (1) Particles having energy greater than thermal energy are continuously or intermittently incident on a solid sample placed in an atmosphere of at least one type of gas in a vacuum container, and the solid surface is etched. and a system for modifying the surface of a solid, in which at least one safe gaseous reaction product of the reaction between the atmospheric gas and the solid sample is heated to a vapor pressure of the product at room temperature. 1. A method for controlling a surface reaction, comprising: maintaining the temperature at a temperature at which the vapor pressure is 1/10 or less, and performing the treatment in a state where the vapor pressure of the atmospheric gas at that temperature does not fall below the vacuum vessel pressure. 2. A surface reaction control method according to claim 1, characterized in that a beer L-pipe is used to control the solid surface temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011945A JPH0614518B2 (en) | 1984-01-27 | 1984-01-27 | Surface reaction control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011945A JPH0614518B2 (en) | 1984-01-27 | 1984-01-27 | Surface reaction control method |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3004476A Division JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
| JP447491A Division JPH0652725B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching equipment |
| JP3004475A Division JP2509389B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60158627A true JPS60158627A (en) | 1985-08-20 |
| JPH0614518B2 JPH0614518B2 (en) | 1994-02-23 |
Family
ID=11791780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59011945A Expired - Lifetime JPH0614518B2 (en) | 1984-01-27 | 1984-01-27 | Surface reaction control method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614518B2 (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144330A (en) * | 1985-12-19 | 1987-06-27 | Nec Corp | Reactive sputtering etching method |
| JPS63110726A (en) * | 1986-10-29 | 1988-05-16 | Hitachi Ltd | Etching method |
| JPS63160227A (en) * | 1986-12-23 | 1988-07-04 | Nec Corp | Dry etching |
| JPS6432628A (en) * | 1986-09-05 | 1989-02-02 | Hitachi Ltd | Dry etching method |
| JPH01103836A (en) * | 1987-07-02 | 1989-04-20 | Toshiba Corp | Dry etching and apparatus therefor |
| JPH01200630A (en) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | Dry etching |
| JPH01231323A (en) * | 1988-03-11 | 1989-09-14 | Sumitomo Metal Ind Ltd | Plasma etching device |
| JPH02146728A (en) * | 1989-08-30 | 1990-06-05 | Hitachi Ltd | Plasma etching and device therefor |
| US4986877A (en) * | 1987-07-29 | 1991-01-22 | Hitachi, Ltd. | Method of dry etching |
| US4992136A (en) * | 1987-07-29 | 1991-02-12 | Hitachi, Ltd. | Dry etching method |
| US5147500A (en) * | 1987-07-31 | 1992-09-15 | Hitachi, Ltd. | Dry etching method |
| US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
| US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
| US5356515A (en) * | 1990-10-19 | 1994-10-18 | Tokyo Electron Limited | Dry etching method |
| US5409562A (en) * | 1991-08-16 | 1995-04-25 | Hitachi, Ltd. | Dry-etching method and apparatus |
| US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
| US5643473A (en) * | 1987-07-31 | 1997-07-01 | Hitachi, Ltd. | Dry etching method |
| US5900162A (en) * | 1989-02-15 | 1999-05-04 | Hitachi, Ltd. | Plasma etching method and apparatus |
| JP2020523794A (en) * | 2017-06-13 | 2020-08-06 | 東京エレクトロン株式会社 | How to pattern a magnetic tunnel junction |
| JP2020167281A (en) * | 2019-03-29 | 2020-10-08 | ローム株式会社 | Semiconductor substrate structure, method for manufacturing the same, and semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54108579A (en) * | 1978-02-14 | 1979-08-25 | Fujitsu Ltd | Method and device for plasma etching |
| JPS558593A (en) * | 1978-07-03 | 1980-01-22 | American Water Services | Apparatus for cleaning pipe of heat exchanger |
-
1984
- 1984-01-27 JP JP59011945A patent/JPH0614518B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54108579A (en) * | 1978-02-14 | 1979-08-25 | Fujitsu Ltd | Method and device for plasma etching |
| JPS558593A (en) * | 1978-07-03 | 1980-01-22 | American Water Services | Apparatus for cleaning pipe of heat exchanger |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144330A (en) * | 1985-12-19 | 1987-06-27 | Nec Corp | Reactive sputtering etching method |
| US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
| JPS6432628A (en) * | 1986-09-05 | 1989-02-02 | Hitachi Ltd | Dry etching method |
| US5705029A (en) * | 1986-09-05 | 1998-01-06 | Hitachi, Ltd. | Dry etching method |
| JPS63110726A (en) * | 1986-10-29 | 1988-05-16 | Hitachi Ltd | Etching method |
| US4943344A (en) * | 1986-10-29 | 1990-07-24 | Hitachi, Ltd. | Etching method |
| JPS63160227A (en) * | 1986-12-23 | 1988-07-04 | Nec Corp | Dry etching |
| JPH01103836A (en) * | 1987-07-02 | 1989-04-20 | Toshiba Corp | Dry etching and apparatus therefor |
| US4986877A (en) * | 1987-07-29 | 1991-01-22 | Hitachi, Ltd. | Method of dry etching |
| US4992136A (en) * | 1987-07-29 | 1991-02-12 | Hitachi, Ltd. | Dry etching method |
| US5643473A (en) * | 1987-07-31 | 1997-07-01 | Hitachi, Ltd. | Dry etching method |
| US5147500A (en) * | 1987-07-31 | 1992-09-15 | Hitachi, Ltd. | Dry etching method |
| JPH01200630A (en) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | Dry etching |
| US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
| JPH01231323A (en) * | 1988-03-11 | 1989-09-14 | Sumitomo Metal Ind Ltd | Plasma etching device |
| US5900162A (en) * | 1989-02-15 | 1999-05-04 | Hitachi, Ltd. | Plasma etching method and apparatus |
| US6165377A (en) * | 1989-02-15 | 2000-12-26 | Hitachi, Ltd. | Plasma etching method and apparatus |
| JPH02146728A (en) * | 1989-08-30 | 1990-06-05 | Hitachi Ltd | Plasma etching and device therefor |
| US5356515A (en) * | 1990-10-19 | 1994-10-18 | Tokyo Electron Limited | Dry etching method |
| US5409562A (en) * | 1991-08-16 | 1995-04-25 | Hitachi, Ltd. | Dry-etching method and apparatus |
| US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
| JP2020523794A (en) * | 2017-06-13 | 2020-08-06 | 東京エレクトロン株式会社 | How to pattern a magnetic tunnel junction |
| JP2020167281A (en) * | 2019-03-29 | 2020-10-08 | ローム株式会社 | Semiconductor substrate structure, method for manufacturing the same, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614518B2 (en) | 1994-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |