JPH0410617A - Manufacturing device for semiconductor - Google Patents
Manufacturing device for semiconductorInfo
- Publication number
- JPH0410617A JPH0410617A JP11349390A JP11349390A JPH0410617A JP H0410617 A JPH0410617 A JP H0410617A JP 11349390 A JP11349390 A JP 11349390A JP 11349390 A JP11349390 A JP 11349390A JP H0410617 A JPH0410617 A JP H0410617A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- exhaust
- exhaust pipe
- gas
- capillaries
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000002912 waste gas Substances 0.000 claims abstract description 15
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 13
- 239000000843 powder Substances 0.000 abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 7
- 239000011148 porous material Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 10
- 238000010586 diagram Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ＣＶＤ装置、エピタキシャル成長装置など、被膜を成長
させる製造装置における排気管の構造に関し、
排気管の管壁への粉末の付着を防止することを１０勺と
し、
反応容器より廃ガスを排出させる排気管の一部を、全面
に多数孔のあるポーラスな内管と、排気管より管径の小
さい細管を付けた外管とからなる二重構造に構成し、
前記内管の内部を通して廃ガスを排気させるとともに、
前記細管によって外管と内管との間に不活性ガスを流入
させ、更に内管の管壁を透過させて、前記廃ガスと同時
に排気するようにした排気管を具備させる。[Detailed Description of the Invention] [Summary] Regarding the structure of the exhaust pipe in manufacturing equipment for growing films, such as CVD equipment and epitaxial growth equipment, it is important to prevent powder from adhering to the wall of the exhaust pipe. A part of the exhaust pipe that discharges waste gas from the reaction vessel has a double structure consisting of a porous inner pipe with many holes on the entire surface and an outer pipe with a thin tube with a smaller diameter than the exhaust pipe. Exhaust the waste gas through the inside of the inner pipe, and
An exhaust pipe is provided which allows an inert gas to flow between the outer pipe and the inner pipe through the thin pipe, and further allows the inert gas to pass through the wall of the inner pipe to be exhausted simultaneously with the waste gas.
且つ、前記排気管を全排気管の一部に構成することを特
徴とする。Further, the exhaust pipe is configured as a part of the entire exhaust pipe.
本発明は半導体製造装置のうち、ＣＶＤ装置。 The present invention relates to a CVD device among semiconductor manufacturing devices.
エピタキシャル成長装置など、被膜を成長させる製造装
置における排気管の構造に関する。The present invention relates to the structure of an exhaust pipe in a manufacturing device for growing a film, such as an epitaxial growth device.
近年、半導体デバイスの量産化、ウェハーの大口径化が
進行するに伴って、被膜の成長が不均一になり易くなっ
ており、従って、その膜質の安定化が重要な問題である
。In recent years, with the progress of mass production of semiconductor devices and the increase in the diameter of wafers, the growth of films tends to become non-uniform, and therefore, stabilization of the film quality is an important issue.
例えば、ＣＶＤ （化学気相成長）装置は半導体デバイ
スの薄膜形成の主流をなしている装置で、膜中添加物濃
度の制御１組成の制御が容易で、ステップカバレージ（
被覆性）の良い被膜が成長する利点のあるものである。For example, CVD (chemical vapor deposition) equipment is the mainstream equipment for forming thin films of semiconductor devices, and it is easy to control the concentration of additives in the film.1 It is easy to control the composition, and step coverage (
This has the advantage of growing a film with good coverage (coverability).
このＣＶＤ装置にはプラズマＣＶＤ装置、減圧ＣＶＤ装
置、常圧ＣＶＤ装置、横型、縦型１枚葉式、バッチ処理
など種々の形式やその組み合わせ形式が考案されており
、第３図に一例として枚葉式減圧ＣＶＤ装置の概要図を
示している。図中の記号１は反応容器、２はウェハー、
３は加熱ヒータ、４はガス流入管、５は排気管である。Various types of CVD equipment have been devised, such as plasma CVD equipment, low pressure CVD equipment, normal pressure CVD equipment, horizontal type, vertical single wafer type, batch processing, etc., and combinations thereof. A schematic diagram of a leaf-type reduced pressure CVD apparatus is shown. Symbol 1 in the figure is a reaction container, 2 is a wafer,
3 is a heater, 4 is a gas inflow pipe, and 5 is an exhaust pipe.
このような枚葉式減圧ＣＶＤ装置を用いて、例えば、ウ
ェハー面に多結晶シリコン膜を成長させる場合、ガス流
入管４から窒素ガス（Ｎ２ ；不活性ガス）をキャリヤ
ガスとしたモノシラン（ＳｉＨ４）＋フォスフイン（Ｐ
Ｈ，）の混合ガスを流入させ、且つ、排気管５により真
空排気して、容器内を数Ｔｏｒｒ〜数百Ｔｏｒｒの減圧
に保持する。次いで、加熱ヒータ３によってウェハー２
を８００〜１０００°Ｃ程度に加熱し、上記の混合ガス
をウェハー面で熱分解させて多結晶シリコン膜を成長さ
せている。For example, when growing a polycrystalline silicon film on a wafer surface using such a single-wafer type low-pressure CVD apparatus, monosilane (SiH4) is grown using nitrogen gas (N2; inert gas) as a carrier gas from the gas inlet tube 4. +Phosphine (P
A mixed gas of H, ) is introduced and evacuated through the exhaust pipe 5 to maintain the inside of the container at a reduced pressure of several Torr to several hundred Torr. Next, the wafer 2 is heated by the heater 3.
The polycrystalline silicon film is grown by heating the wafer to about 800 to 1000° C. and thermally decomposing the mixed gas on the wafer surface.
なお、上記例の枚葉式減圧ＣＶＤ装置は自動化処理シス
テムを構成する製造装置の一部になっており、今後汎用
される可能性の高いものである。Note that the single wafer type low pressure CVD apparatus in the above example is a part of manufacturing equipment that constitutes an automated processing system, and is likely to be widely used in the future.
なお、処理システムの各装置は紙面に垂直な方向に並列
しており、従って、このＣＶＤ装置のローダ室とアンロ
ーダ室とも紙面に垂直な方向に配置されている。Note that each device of the processing system is arranged in parallel in the direction perpendicular to the plane of the paper, and therefore, the loader chamber and unloader chamber of this CVD apparatus are also arranged in the direction perpendicular to the plane of the paper.
（発明が解決しようとする課題〕
ところで、上記のようなＣＶＤ装置には反応ガスを流入
させるガス流入管４や廃ガスを排気する排気管５が不可
欠であり、そのガスの流入量や排気量をバランス（均衡
）させて容器内部の減圧度を一定に維持しないと、均質
な被膜を成長させることができない。(Problem to be Solved by the Invention) By the way, the above-mentioned CVD apparatus requires a gas inflow pipe 4 for introducing reaction gas and an exhaust pipe 5 for exhausting waste gas, and the amount of inflow and exhaust of the gas is indispensable. A homogeneous film cannot be grown unless the vacuum inside the container is maintained at a constant level.
しかし、反応ガスを熱分解させて被膜を成長させる装置
であるから、熱分解して固体化した生成物がすべてウェ
ハー面に被着するというわけではなく、固体化した粉末
（生成物）が排気管５から排気されるために、その粉末
が排気管５の管壁に付着し、特に排気管５の湾曲部分や
管内径の細（なった開閉弁や流量計の部分に付着し易い
。However, since this is a device that thermally decomposes a reaction gas to grow a film, not all of the thermally decomposed and solidified products adhere to the wafer surface, and the solidified powder (products) are exhausted. Since the powder is exhausted from the pipe 5, the powder adheres to the wall of the exhaust pipe 5, and is particularly likely to adhere to curved parts of the exhaust pipe 5 and parts of the open/close valve and flowmeter where the inner diameter of the pipe is small.
従って、そのように、管壁に粉末が付着して次第に被着
量が増加すると、排気管の内径が更に小さくなったり、
詰まったりするために排気量が変化して、ガスの流入と
排気とのバランスが崩れ、容器内の減圧度が変化して均
質な被膜の成長が困難になる問題がある。Therefore, as powder adheres to the pipe wall and the amount of adhesion gradually increases, the inner diameter of the exhaust pipe becomes smaller,
This causes problems such as clogging, which changes the exhaust volume, disrupts the balance between gas inflow and exhaust, and changes the degree of vacuum inside the container, making it difficult to grow a homogeneous film.
その課題は、第１図に示すように、反応容器より廃ガス
を排出させる排気管を、全面に多数孔のあるポーラスな
内管１１と、排気管より管径の小さい細管２０を付けた
外管１２とからなる二重構造に構成し、
前記内管の内部を通して廃ガスを排気させるとともに、
前記細管によって外管と内管との間に不活性ガスを流入
させ、更に内管の管壁を透過させて、前記廃ガスと同時
に排気するようにした排気管を具備している半導体製造
装置によって解決される。As shown in Fig. 1, the problem is that the exhaust pipe for discharging waste gas from the reaction vessel has a porous inner pipe 11 with many holes on its entire surface, and an outer tube 20 with a smaller diameter than the exhaust pipe. It has a double structure consisting of a pipe 12, exhausts the waste gas through the inside of the inner pipe, and
A semiconductor manufacturing device comprising an exhaust pipe that allows an inert gas to flow between an outer pipe and an inner pipe through the thin pipe, and further allows the inert gas to pass through the wall of the inner pipe to exhaust the waste gas at the same time. solved by.
且つ、このような排気管を全排気管の一部に構成しても
良い。Moreover, such an exhaust pipe may be configured as a part of the entire exhaust pipe.
即ち、本発明は排気管をポーラス（ｐｏｒｏｕｓ）な内
管１１と細管２０を付けた外管１２とからなる二重構造
にし、処理中は細管から不活性ガスを内管の管壁を通し
て内管の内部に流入して、廃ガスと同時に排気する。That is, in the present invention, the exhaust pipe has a double structure consisting of a porous inner pipe 11 and an outer pipe 12 equipped with a thin tube 20, and during processing, inert gas is passed from the thin tube through the wall of the inner tube to the inner tube. The gas flows into the interior of the gas and is exhausted at the same time as the waste gas.
そうすれば、管壁に付着した粉末を不活性ガスと一緒に
排出できて、絶えずガスの流入と排気とのバランスを維
持でき、均質な被膜を成長させることができる。In this way, the powder adhering to the tube wall can be discharged together with the inert gas, the balance between gas inflow and exhaust can be constantly maintained, and a homogeneous film can be grown.
〔実施例〕 以下、図面を参照して実施例によって詳細に説明する。〔Example〕 Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図（ａ）、 （ｂ）は本発明にかかる排気管を示す
図で、同図（ａ）は側断面図、同図（ｂ）は垂直断面（
ＡＡ断面）図を示しており、記号１１は内管、１２は外
管。FIGS. 1(a) and 1(b) are views showing an exhaust pipe according to the present invention, in which FIG. 1(a) is a side sectional view, and FIG. 1(b) is a vertical sectional view (
AA cross section) is shown, where symbol 11 is the inner tube and 12 is the outer tube.
２０は外管に付けた細管である。例えば、外管１２のロ
径３０ｍｍφ、内管１１の口径２０ｍｍφとすると細管
２０の口径は３ｍｍφ程度にして、その細管２０を二重
管にした排気管部分に数本付設する。例えば、本例は２
箇所の垂直断面位置に２つずつ合計４本を付設しである
。また、内管１１は多数孔のあるポーラスな管で、例え
ば、０．５〜１ｍｍφの微細孔を無数に設けである。20 is a thin tube attached to the outer tube. For example, if the diameter of the outer tube 12 is 30 mmφ and the diameter of the inner tube 11 is 20 mmφ, the diameter of the capillary tube 20 is about 3 mmφ, and several of the capillary tubes 20 are attached to a double-pipe exhaust pipe section. For example, in this example, 2
A total of four wires are attached, two at each vertical cross-sectional position. Further, the inner tube 11 is a porous tube with many holes, for example, it is provided with countless fine holes of 0.5 to 1 mmφ.
このような内管１１と外管１２とから構成した二重層の
排気管部分を設けて、第３図に示すＣＶＤ装置を動作さ
せている間は、細管２０から窒素ガスを流入させる。そ
うすると、この排気管の先端には真空排気ポンプ（図示
していない）を配設して真空排気しているために、細管
２０から外管１２と内管１１との間に流入した窒素ガス
がＣＶＤ装置側から排出される廃ガスと共に排気される
。その際、廃ガス中に含まれる粉末が内管１１の管壁に
付着せず、内管１１の管壁から透過する窒素ガスと一緒
に排出される。従って、そのように構成した排気管の内
部には粉末は被着しない。A double-layer exhaust pipe section consisting of the inner tube 11 and outer tube 12 is provided, and nitrogen gas is allowed to flow in through the thin tube 20 while the CVD apparatus shown in FIG. 3 is operating. Then, since a vacuum pump (not shown) is installed at the tip of this exhaust pipe to evacuate, the nitrogen gas flowing from the thin tube 20 between the outer tube 12 and the inner tube 11 is It is exhausted together with the waste gas discharged from the CVD equipment side. At this time, the powder contained in the waste gas does not adhere to the wall of the inner tube 11 and is discharged together with the nitrogen gas that permeates through the wall of the inner tube 11. Therefore, powder does not adhere to the inside of the exhaust pipe configured in this way.
この本発明にかかる排気管の構成を排気管の全長にわた
って実施するのが望ましいが、それでは真空排気ポンプ
の排気量を増大させることになるために、これを部分的
に実施するのが良い。It is desirable to implement the configuration of the exhaust pipe according to the present invention over the entire length of the exhaust pipe, but since this would increase the displacement amount of the vacuum pump, it is better to implement it partially.
第２図（ａ）、 （ｂ）に本発明にかかる排気管構成の
実施箇所の具体例を示している。図中の記号５は排気管
、■は開閉弁、他は第１図と同一記号がつけてあり、第
２図（ａ）は湾曲部に設けた例、同図（ｂ）は開閉弁近
傍に設けた例である。これらの部分が粉末が付着し易い
ために、この部分に配置すれば特に有効となる。FIGS. 2(a) and 2(b) show specific examples of implementation locations of the exhaust pipe structure according to the present invention. In the figure, symbol 5 is the exhaust pipe, ■ is the on-off valve, and the others are given the same symbols as in Fig. 1. Fig. 2 (a) is an example of installation in a curved part, and Fig. 2 (b) is near the on-off valve. This is an example set in . Since powder tends to adhere to these parts, it is particularly effective to arrange it in these parts.
従っ゛て、本発明にかかる排気管構造にすれば、管壁に
付着する粉末を皆無または極めて減少させることができ
、ＣＶＤ装置内部のガスのバランスが維持できて、均質
な被膜の成長に役立つものである。Therefore, with the exhaust pipe structure according to the present invention, it is possible to eliminate or extremely reduce the amount of powder adhering to the pipe wall, maintain the gas balance inside the CVD apparatus, and help grow a homogeneous film. It is something.
なお、上記は減圧式のＣＶＤ装置の実施例で説明したが
、本発明にかかる排気管は常圧式にも適用でき、また、
多結晶シリコン膜以外の成長被膜は勿論、他の膜成長装
置にも適用することができる。Although the above description has been made using an embodiment of a reduced pressure type CVD apparatus, the exhaust pipe according to the present invention can also be applied to a normal pressure type.
It can be applied to growth films other than polycrystalline silicon films as well as other film growth apparatuses.
以上の説明から明らかなように、本発明にかかる半導体
製造装置によれば、均一な膜厚や膜質などの均質な被膜
を成長させることができて、半導体デバイスの品質向上
に顕著に寄与するものである。As is clear from the above description, the semiconductor manufacturing apparatus according to the present invention can grow a homogeneous film with uniform thickness and quality, which significantly contributes to improving the quality of semiconductor devices. It is.
第１１９（ａ）、 （ｂ）は本発明にかかる排気管を示
す図、第２図（ａＬ （ｂ）は具体例図、
第３図は枚葉式減圧ＣＶＤ装置の概要図である。
図において、
１は反応容器、 ２はウェハー、３は加熱ヒータ
、 ４はガス流入管、５は排気管、
１１は内管、 １２は外管、２０は細管
を示している。119(a) and 119(b) are diagrams showing the exhaust pipe according to the present invention, FIG. 2(a) is a diagram showing a specific example, and FIG. In the figure, 1 is a reaction vessel, 2 is a wafer, 3 is a heater, 4 is a gas inflow pipe, 5 is an exhaust pipe, 11 is an inner pipe, 12 is an outer pipe, and 20 is a thin tube.
Claims (2)
に多数孔のあるポーラスな内管と、排気管より管径の小
さい細管を付けた外管とからなる二重構造に構成し、 前記内管の内部を通して廃ガスを排気させるとともに、
前記細管によって外管と内管との間に不活性ガスを流入
させ、更に内管の管壁を透過させて、前記廃ガスと同時
に排気するようにした排気管を具備してなることを特徴
とする半導体製造装置。(1) The exhaust pipe for discharging waste gas from the reaction vessel has a double structure consisting of a porous inner pipe with many holes on the entire surface and an outer pipe with a thin tube having a smaller diameter than the exhaust pipe, Exhaust the waste gas through the inside of the inner pipe, and
It is characterized by comprising an exhaust pipe that allows inert gas to flow between the outer pipe and the inner pipe through the thin pipe, and further allows the inert gas to pass through the wall of the inner pipe to exhaust the waste gas at the same time. Semiconductor manufacturing equipment.
徴とする請求項（１）記載の半導体製造装置。(2) The semiconductor manufacturing apparatus according to claim (1), wherein the exhaust pipe is configured as a part of the entire exhaust pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11349390A JPH0410617A (en) | 1990-04-27 | 1990-04-27 | Manufacturing device for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11349390A JPH0410617A (en) | 1990-04-27 | 1990-04-27 | Manufacturing device for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0410617A true JPH0410617A (en) | 1992-01-14 |
Family
ID=14613708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11349390A Pending JPH0410617A (en) | 1990-04-27 | 1990-04-27 | Manufacturing device for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0410617A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180142353A1 (en) * | 2016-11-18 | 2018-05-24 | Hitachi Kokusai Electric Inc. | Reaction tube structure and substrate processing apparatus |
| EP3980575A4 (en) * | 2019-06-06 | 2023-03-15 | Picosun Oy | Porous inlet |
-
1990
- 1990-04-27 JP JP11349390A patent/JPH0410617A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180142353A1 (en) * | 2016-11-18 | 2018-05-24 | Hitachi Kokusai Electric Inc. | Reaction tube structure and substrate processing apparatus |
| CN108074845A (en) * | 2016-11-18 | 2018-05-25 | 株式会社日立国际电气 | The manufacturing method of substrate board treatment, reaction tube and semiconductor device |
| CN108074845B (en) * | 2016-11-18 | 2021-12-03 | 株式会社国际电气 | Substrate processing apparatus, reaction tube, and method for manufacturing semiconductor device |
| US11359283B2 (en) * | 2016-11-18 | 2022-06-14 | Kokusai Electric Corporation | Reaction tube structure and substrate processing apparatus |
| EP3980575A4 (en) * | 2019-06-06 | 2023-03-15 | Picosun Oy | Porous inlet |
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