JPH11200052A - Chemical vapor phase growth apparatus - Google Patents
Chemical vapor phase growth apparatusInfo
- Publication number
- JPH11200052A JPH11200052A JP1776998A JP1776998A JPH11200052A JP H11200052 A JPH11200052 A JP H11200052A JP 1776998 A JP1776998 A JP 1776998A JP 1776998 A JP1776998 A JP 1776998A JP H11200052 A JPH11200052 A JP H11200052A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- raw material
- gas
- perforated plate
- shielding plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、Ｓｉ半導体や化合
物半導体デバイス分野における薄膜形成のための化学的
気相成長装置の改良に関する。特に大面積の基板に薄膜
形成するための化学的気相成長装置において原料ガス消
費効率を高めるための工夫に関する。ここで基板と言う
のはガラス基板、Ｓｉウエハ、ＧａＡｓウエハ、ＩｎＰ
ウエハなど半導体基板を指している。大面積というのは
基板によって違うがＳｉウエハの場合は８インチ（２０
ｃｍ）ウエハ以上のものを意味する。The present invention relates to an improvement of a chemical vapor deposition apparatus for forming a thin film in the field of Si semiconductor and compound semiconductor devices. In particular, the present invention relates to a device for improving source gas consumption efficiency in a chemical vapor deposition apparatus for forming a thin film on a large-area substrate. Here, the substrate is a glass substrate, Si wafer, GaAs wafer, InP
Refers to a semiconductor substrate such as a wafer. The large area depends on the substrate, but in the case of a Si wafer, it is 8 inches (20 inches).
cm) means more than a wafer.
【０００２】[0002]
【従来の技術】図２に化学的気相成長装置の概略を示
す。これは真空に引くことのできるＣＶＤ成長室の内部
構造だけを図示している。実際には外側に壁があるが省
略している。処理されるべき基板１が円盤状の支持台２
の上に戴置される。これは１枚のウエハだけを処理する
枚葉式の装置である。その他に複数の基板をひとつの支
持台の上に載せて一挙に処理する化学的気相成長装置も
ある。支持台２は回転軸６に固定され回転昇降できるよ
うになっている。支持台２の内部あるいは外部にヒ−タ
があって基板を加熱するようになっている。支持台内部
に加熱機構がある場合は内部加熱という。外部にある場
合は高周波加熱やランプ加熱になるがこれは外部加熱と
いう。ここでは加熱機構は図示していない。2. Description of the Related Art FIG. 2 schematically shows a chemical vapor deposition apparatus. It shows only the internal structure of the CVD growth chamber which can be evacuated. Actually, there is a wall on the outside, but it is omitted. The substrate 1 to be processed is a disk-shaped support 2
Placed on top of This is a single-wafer apparatus that processes only one wafer. In addition, there is a chemical vapor deposition apparatus in which a plurality of substrates are placed on a single support and processed at once. The support base 2 is fixed to a rotating shaft 6 so that it can be rotated up and down. There is a heater inside or outside the support base 2 to heat the substrate. When there is a heating mechanism inside the support, it is called internal heating. If it is outside, it will be high-frequency heating or lamp heating, which is called external heating. Here, the heating mechanism is not shown.
【０００３】支持台２のすぐ上にはこれに対向して原料
導入管７が設置される。原料導入管は下方が広がった円
形状になっており、ここに多数の原料排出口８を穿った
多孔板４が設けられる。原料排出口８の外側には外套管
９がある。[0006] Immediately above the support 2, a raw material introduction pipe 7 is provided to face the support 2. The raw material introduction pipe has a circular shape with the lower part widened, and a perforated plate 4 having a large number of raw material discharge ports 8 is provided here. Outside the raw material discharge port 8 is a mantle tube 9.
【０００４】基板の面積が狭い場合は原料導入口は一つ
である。基板面積が大きいと一つの原料排出口から基板
中心に向けて原料を吹き出させるようにした場合、原料
ガスの流速、圧力など基板と接触状態が基板上の位置に
よって相違して薄膜の膜厚、膜質にばらつきが生じる。
そこで多数の小孔を穿った多孔板から原料ガスを一様な
状態で基板に吹き付けるようにしているのである。多孔
板は基板より少し小さい直径を持っている。穴の配分は
基板に当たるガス量ができるだけ均一になるように決め
られる。When the area of the substrate is small, there is only one raw material inlet. If the substrate area is large and the raw material is blown out from one raw material discharge port toward the center of the substrate, the contact state with the substrate such as the flow rate of the raw material gas, pressure, etc. differs depending on the position on the substrate, the thickness of the thin film, The film quality varies.
Therefore, the source gas is blown onto the substrate in a uniform state from a perforated plate having many small holes. The perforated plate has a slightly smaller diameter than the substrate. The distribution of holes is determined so that the amount of gas that strikes the substrate is as uniform as possible.
【０００５】原料導入管７から原料となるガス３を多数
の原料排出口８を通して噴出する。原料ガス３は被処理
基板１に吹き付けられる。原料ガス３は加熱された基板
１上で分解され気相反応を起こし、生成物が薄膜として
基板上に堆積する。被処理基板１の面積が大きいほど処
理回数に対する半導体デバイスの収率が大きくなる。そ
のため被処理基板１の大面積化が進んでいる。Ｓｉウエ
ハの場合は通常２０ｃｍ（８インチ）直径のものが使わ
れているが３０ｃｍ径（１２インチ）のＳｉウエハが検
討され一部実施されている。ガラス基板の場合はアモル
ファスＳｉなどの薄膜を生成するがその場合は１辺が５
０ｃｍ〜１００ｃｍの大きいガラス板を基板とする。Ｇ
ａＡｓなどの化合物半導体の場合はＳｉより小さい直径
のものであるが、それでもウエハ（基板）が次第に大口
径化しつつある。A gas 3 serving as a raw material is ejected from a raw material introduction pipe 7 through a number of raw material discharge ports 8. The source gas 3 is sprayed on the substrate 1 to be processed. The source gas 3 is decomposed on the heated substrate 1 to cause a gas phase reaction, and a product is deposited on the substrate as a thin film. The larger the area of the substrate 1 to be processed, the higher the yield of semiconductor devices with respect to the number of times of processing. Therefore, the area of the substrate to be processed 1 is increasing. In the case of Si wafers, those having a diameter of 20 cm (8 inches) are usually used, but Si wafers having a diameter of 30 cm (12 inches) have been studied and partially implemented. In the case of a glass substrate, a thin film of amorphous Si or the like is generated.
A large glass plate of 0 cm to 100 cm is used as a substrate. G
In the case of a compound semiconductor such as aAs, the diameter is smaller than that of Si, but the diameter of the wafer (substrate) is still increasing.
【０００６】[0006]
【発明が解決しようとする課題】大面積の基板に対して
は、薄膜の面内の均一性を向上させるため、原料ガスは
通常多孔板を通して、基板に吹き付けるようにする事が
多い。多孔板より吹き出すようにすると薄膜の膜厚、膜
質など特性の均一性は向上する。しかし別の欠点があ
る。それは原料消費効率が低いという事である。For a large-area substrate, the raw material gas is usually blown onto the substrate through a perforated plate in order to improve the in-plane uniformity of the thin film. When blown out from the perforated plate, the uniformity of characteristics such as the thickness and quality of the thin film is improved. But there are other disadvantages. That is, the raw material consumption efficiency is low.
【０００７】多孔板端部より噴出する原料ガスＢは中心
からの原料ガスＣに押し出され、基板に到達する割合が
少なくなる。端部より出るガスＢが無駄になり易い。た
めに原料の消費効率が低下する。例えばＳｉウエハの上
へのＳｉ薄膜の成長には水素化物（ＳｉＨ4 ）と水素
（Ｈ2 ）等が用いられる。水素はキャリヤガスである。
ＧａＡｓ基板の上へのＧａＡｓ薄膜の成長にはアルシン
（ＡｓＨ3 ）とトリメチルガリウム（ＴＭＧ：Ｇａ（Ｃ
Ｈ3 ）3 ））、水素（Ｈ2 ）などが用いられる。何れも
高価な高純度のガスであるし危険物、毒物であるものも
ある。アルシンとＴＭＧの場合はモル比にして後者が１
０倍〜５０倍の量が必要である。基板の大面積化が進む
につれて原料ガスの使用量が多くなるから、消費効率を
向上させる事は大面積化学的気相成長にとって重要な課
題である。現在のところ原料消費効率は１０％程度であ
る。つまりこの場合９０％もの原料ガスが無駄になって
いる。高価な原料ガスの浪費を抑えることが緊喫の課題
であることがわかるであろう。[0007] The source gas B ejected from the end of the perforated plate is pushed out from the center by the source gas C, and the ratio of reaching the substrate is reduced. The gas B emitted from the end tends to be wasted. As a result, the raw material consumption efficiency is reduced. For example, hydride (SiH 4 ) and hydrogen (H 2 ) are used for growing a Si thin film on a Si wafer. Hydrogen is the carrier gas.
For growing a GaAs thin film on a GaAs substrate, arsine (AsH 3 ) and trimethylgallium (TMG: Ga (C
H 3) 3)), hydrogen (H 2) are used. All are expensive high-purity gases, and some are dangerous or poisonous. In the case of arsine and TMG, the latter is 1 in molar ratio.
A volume of 0 to 50 times is required. Since the amount of source gas used increases as the area of the substrate increases, improving the consumption efficiency is an important issue for large-area chemical vapor deposition. At present, raw material consumption efficiency is about 10%. That is, in this case, as much as 90% of the source gas is wasted. It can be seen that reducing waste of expensive source gases is an urgent task.
【０００８】[0008]
【課題を解決するための手段】本発明の化学的気相成長
装置は、真空に引く事のできる処理室の内部に原料ガス
を導き多数の原料排出口を穿孔した多孔板から原料ガス
を加熱された基板に向けて噴出し原料ガスが気相反応を
起こして基板の上に薄膜を生成するようにした化学的気
相成長装置において、原料排出口を有する多孔板の外側
に筒状（四角筒、円筒、六角筒など）の遮蔽板をその下
端が多孔板より基板に接近した位置に設け、多孔板と遮
蔽板との間の流路にパージ用のガスを流すようにしてい
る。According to the chemical vapor deposition apparatus of the present invention, a source gas is introduced into a processing chamber which can be evacuated, and the source gas is heated from a perforated plate having a large number of source outlets. In a chemical vapor deposition apparatus in which a source gas is ejected toward a substrate subjected to a gas phase reaction to form a thin film on the substrate, a cylindrical (square) is formed outside a perforated plate having a source outlet. A shielding plate such as a cylinder, a cylinder, or a hexagonal cylinder is provided at a position where the lower end is closer to the substrate than the perforated plate, and a gas for purging flows through a flow path between the perforated plate and the shielding plate.
【０００９】本発明の装置は、それゆえ、真空に引く事
のできるＣＶＤ処理室と、処理室の内部に設けられた基
板を戴置できる支持台と、基板を加熱する加熱機構と、
原料ガスを導入するため多数の原料排出口を穿設した多
孔板を含む原料導入機構と、多孔板の外側にこれを囲み
下端が多孔板より基板に接近しているように設けられる
筒状（四角筒、円筒、六角筒など）の遮蔽板と、遮蔽板
と多孔板の間の空間からパージガスを基板に向けて吹き
付ける機構よりなる。The apparatus of the present invention therefore comprises a CVD processing chamber that can be evacuated, a support stand provided inside the processing chamber for mounting a substrate, a heating mechanism for heating the substrate,
A raw material introduction mechanism including a perforated plate having a plurality of raw material outlets for introducing a raw material gas, and a cylindrical shape provided outside the perforated plate so as to surround the perforated plate and have a lower end closer to the substrate than the perforated plate ( (A square tube, a cylinder, a hexagonal tube, etc.) and a mechanism for blowing a purge gas toward the substrate from a space between the shield plate and the perforated plate.
【００１０】[0010]
【発明の実施の形態】支持台２は基板１の大きさに対応
した大きさを持つ。基板はＳｉの場合は２０ｃｍ径ある
いは３０ｃｍ径の大きいものである。基板に対向する原
料導入管の下端に設けられる多孔板は基板のサイズより
少し小さい。多孔板には多数の原料排出口が穿孔され
る。これは例えば２ｍｍ〜４ｍｍ程度の小さい直径の穴
である。多孔板を囲む遮蔽板は、その下端が多孔板より
下方に延びている。支持台は回転軸によって支持され
る。これは内部に加熱機構と持つ場合もあるし、外部加
熱される事もある。回転軸は回転し昇降できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The support 2 has a size corresponding to the size of the substrate 1. The substrate has a large diameter of 20 cm or 30 cm in the case of Si. The perforated plate provided at the lower end of the raw material introduction pipe facing the substrate is slightly smaller than the size of the substrate. A number of raw material outlets are perforated in the perforated plate. This is a hole having a small diameter of, for example, about 2 mm to 4 mm. The lower end of the shielding plate surrounding the perforated plate extends below the perforated plate. The support is supported by a rotating shaft. This may have a heating mechanism inside, or it may be externally heated. The rotating shaft can rotate and move up and down.
【００１１】原料ガスは上方から反応室内の原料導入管
に入り、多孔板の原料排出口から噴出する。小さい穴で
あって圧力が掛かっているので原料ガスは下向きに出る
が中央部に噴出した原料ガスＣが基板に当たって周辺部
に向けて進路を曲げる。それで周辺部に吹き出された原
料ガスＢはより周辺に向けて押し出される。しかし遮蔽
板があり、これは多孔板より基板方向に突出している。
多孔板端部より排出された原料ガスＢを押し止め、基板
方向に向かわせる。周辺部の原料排出口から出た原料ガ
スが基板側に戻り気相反応して薄膜になる可能性があ
る。だから原料の利用効率が高まる。The raw material gas enters the raw material introduction pipe in the reaction chamber from above, and blows out from the raw material discharge port of the perforated plate. Since the pressure is applied to the small hole, the source gas flows downward, but the source gas C ejected to the center hits the substrate and bends toward the periphery. As a result, the raw material gas B blown out to the peripheral portion is pushed further toward the periphery. However, there is a shielding plate, which protrudes from the perforated plate toward the substrate.
The raw material gas B discharged from the end of the perforated plate is pressed down and directed toward the substrate. There is a possibility that the source gas discharged from the source outlet at the peripheral portion returns to the substrate side and undergoes a gas phase reaction to form a thin film. Therefore, the utilization efficiency of the raw materials increases.
【００１２】しかし遮蔽板が加熱した基板に接近した位
置にあるため遮蔽板が加熱される。このままだと遮蔽板
にも膜堆積が行われる。これは無駄な事であるし堆積し
た膜が時に剥落し基板に落ちると欠陥を作ることにもな
ってしまう。これを防ぐ為に遮蔽板と多孔板との間にパ
ージ用ガスを流している。パージガスは周辺部を降下す
る原料ガスＢが遮蔽板に接触するのを妨げる。ために遮
蔽板には膜が堆積しない。原料ガスを浪費せず基板上の
薄膜に欠陥が入るのを防ぐことができる。パージガスは
気相反応を起こさない不活性なガスであればよい。窒素
ガスや、希ガスなどを用いると良い。パージガスの流速
Ｐは、原料ガスの流速Ｇより速いと原料ガスの流れを乱
してしまう。それゆえパージガスの流速Ｐは原料ガスの
流速Ｇより低いものとする。Ｐ＜Ｇである。例えば原料
ガスの原料排出口での流速が０．５ｍ／ｓ〜２ｍ／ｓと
すると、パージガスの流速は０．２ｍ／ｓ〜１ｍ／ｓと
半分程度にする。However, since the shielding plate is located at a position close to the heated substrate, the shielding plate is heated. In this state, film deposition is performed on the shielding plate. This is wasteful, and the deposited film sometimes peels off and falls on the substrate, creating defects. To prevent this, a purge gas is supplied between the shielding plate and the perforated plate. The purge gas prevents the raw material gas B descending in the peripheral portion from contacting the shielding plate. Therefore, no film is deposited on the shielding plate. Defects can be prevented from entering the thin film on the substrate without wasting the source gas. The purge gas may be an inert gas that does not cause a gas phase reaction. It is preferable to use nitrogen gas, a rare gas, or the like. If the flow rate P of the purge gas is higher than the flow rate G of the source gas, the flow of the source gas is disturbed. Therefore, the flow rate P of the purge gas is lower than the flow rate G of the source gas. P <G. For example, if the flow velocity of the raw material gas at the raw material discharge port is 0.5 m / s to 2 m / s, the flow velocity of the purge gas is reduced to about half, from 0.2 m / s to 1 m / s.
【００１３】[0013]
【実施例】図１に本発明の実施例を示す。処理室の内部
の構造のみを書き、処理室（反応室）の壁は図示を省略
している。ＣＶＤ処理室は縦長の容器であって真空に引
く事ができる。原料ガスは気相反応し廃ガスは真空排気
装置によって排気される。簡単のため処理室や真空排気
装置の図示を略している。被処理基板１は、加熱構造を
有する支持台２によって水平に支持されている。加熱機
構は抵抗加熱であるがここでは図示しない。また外部か
らランプ加熱あるいは高周波加熱であっても良い。支持
台１の中央に１枚のウエハが載っている枚葉式のものを
示すが複数枚を一挙に処理するようにしても良い。支持
台１は回転軸６によって支えられ必要に応じて回転昇降
できる構造になっている。支持台１はカーボンなどで作
られＳｉＣなどのコ−ティングがなされる。ヒ−タはや
はりカーボンであって支持台の内部にもうけられる。ヒ
−タは回転せず外側の回転軸６と支持台２だけが回転す
る。基板（ウエハ）１はＳｉ、ＧａＡｓ、ガラスなどで
ある。FIG. 1 shows an embodiment of the present invention. Only the internal structure of the processing chamber is illustrated, and the processing chamber (reaction chamber) wall is not shown. The CVD processing chamber is a vertically long container and can be evacuated. The raw material gas undergoes a gas phase reaction, and the waste gas is exhausted by a vacuum exhaust device. For simplicity, illustration of a processing chamber and a vacuum exhaust device are omitted. The substrate 1 to be processed is horizontally supported by a support 2 having a heating structure. The heating mechanism is resistance heating, but is not shown here. Lamp heating or high-frequency heating from outside may be used. Although a single wafer type in which one wafer is placed on the center of the support 1 is shown, a plurality of wafers may be processed at a time. The support base 1 is supported by a rotating shaft 6 and has a structure that can be rotated and moved up and down as needed. The support 1 is made of carbon or the like and coated with SiC or the like. The heater is also carbon and is provided inside the support. The heater does not rotate, and only the outer rotating shaft 6 and the support 2 rotate. The substrate (wafer) 1 is made of Si, GaAs, glass or the like.
【００１４】基板１の上方に原料導入管７が設けられ
る。原料導入管７の下端は拡開し広い管部の下端には多
孔板４が取り付けられる。多孔板４は２ｍｍ〜４ｍｍ径
の小孔が多数穿孔される。均等分布であるとは限らな
い。基板１に均等な密度で原料ガスを噴射できるような
穴分布とする。多孔板４の外側には外套管９がある。こ
れはステンレスなどの金属である。厚みは３ｍｍ〜２０
ｍｍの程度であるが、ここでは１０ｍｍものを用いてい
る。外套管９までが原料導入管７である。原料導入管７
の外周にこれを囲むように筒状の遮蔽板１０が設けられ
る。遮蔽板１０の下端Ｗは多孔板４の下面よりさらに基
板側にある。つまり遮蔽板は多孔板より、基板方向に長
く張り出している。遮蔽板１０によって多孔板４直下の
空間の一部が囲まれる。突出量Ｕの長さは、多孔板から
排出されるガスを基板方向に向かわせるだけの十分な長
さで、かつ基板を流れるガスがスムーズにその外側へと
押し出されるものとなっている。A raw material introduction pipe 7 is provided above the substrate 1. The lower end of the raw material introduction tube 7 is expanded, and the perforated plate 4 is attached to the lower end of the wide tube portion. The perforated plate 4 has a large number of small holes having a diameter of 2 mm to 4 mm. The distribution is not always uniform. The hole distribution is such that the source gas can be injected at a uniform density onto the substrate 1. Outside the perforated plate 4 is a mantle tube 9. This is a metal such as stainless steel. The thickness is 3mm-20
Although it is on the order of mm, here, 10 mm is used. The raw material introduction tube 7 extends to the outer tube 9. Raw material introduction pipe 7
A cylindrical shielding plate 10 is provided on the outer periphery of the device so as to surround it. The lower end W of the shielding plate 10 is further on the substrate side than the lower surface of the perforated plate 4. That is, the shielding plate extends longer in the direction of the substrate than the perforated plate. A part of the space directly below the perforated plate 4 is surrounded by the shielding plate 10. The length of the protruding amount U is sufficient to direct the gas discharged from the perforated plate toward the substrate, and the gas flowing through the substrate is smoothly pushed out of the substrate.
【００１５】原料導入管７の外側と遮蔽板１０の間にガ
スの流路を形成する。これはパージガスの流路１１であ
る。外套管９と遮蔽板１０の間の流路１１の終端つまり
外套管９と面一に小孔を多数穿孔した多孔リング１２が
はめこんである。パージガスは原料ガスが遮蔽板１０に
接触しないようにするための流路１１に流される。これ
は窒素、希ガス、水素ガスなどである。A gas flow path is formed between the outside of the raw material introduction pipe 7 and the shielding plate 10. This is the purge gas flow path 11. A perforated ring 12 having a large number of small holes formed in the end of the flow path 11 between the mantle tube 9 and the shielding plate 10, that is, flush with the mantle tube 9 is fitted therein. The purge gas is supplied to a flow path 11 for preventing the source gas from contacting the shielding plate 10. This is nitrogen, rare gas, hydrogen gas or the like.
【００１６】以上の構成においてその作用を説明する。
原料ガス３は原料導入管７を通り処理室に導入される。
これが終端の多孔板４の原料ガス排出口８を通って基板
１に向けて噴出する。加熱された基板に接触すると原料
ガスは気相反応を起こす。気相反応の生成物は基板の上
に堆積し薄膜となる。未反応ガスと反応済のガスは基板
の表面をかすめて基板支持台の周辺にいたりさらに下方
に吸い込まれ排気部から外部へと排出される。中央部に
噴出する原料ガスＣは比較的長く滞留する。周辺部のガ
スは中央分のガスＣによって外部に押し出されるが、円
筒状の遮蔽板１０があるので内側へ押し戻される。これ
によって周辺部に噴射される原料ガスもより長く基板近
傍に滞留できる。遮蔽板１０の下端Ｗが多孔板４より下
にあるので原料ガスの周辺への流れをせき止める。単に
せき止めたのではガスは移出できないので遮蔽板１０と
支持台２の間は空間になっている。The operation of the above configuration will be described.
The raw material gas 3 is introduced into the processing chamber through the raw material introduction pipe 7.
This is ejected toward the substrate 1 through the source gas outlet 8 of the terminal plate 4. When contacting the heated substrate, the source gas causes a gas phase reaction. The products of the gas phase reaction are deposited on the substrate to form a thin film. The unreacted gas and the gas that has been reacted are grazed on the surface of the substrate and are drawn to the periphery of the substrate support or further downward, and are discharged to the outside from the exhaust unit. The source gas C ejected to the center stays for a relatively long time. The gas in the peripheral portion is pushed out to the outside by the gas C in the center, but is pushed back inside due to the cylindrical shielding plate 10. As a result, the source gas injected to the peripheral portion can stay longer near the substrate. Since the lower end W of the shielding plate 10 is below the perforated plate 4, the flow of the raw material gas to the periphery is blocked. Since gas cannot be transferred simply by damming, there is a space between the shielding plate 10 and the support 2.
【００１７】パージガスが多孔板４と遮蔽板１０の間に
流れているから原料ガスは遮蔽板１０の方へ流れず、遮
蔽板には薄膜が付着しない。またパージガスは、原料ガ
スを基板方向に対して向かわす為の押さえつけガスの役
割を持っている。ただし、パージガスが基板上での原料
ガスの流れを乱さない事に注意する必要がある。それゆ
えパージガスの出口流速Ｐは、原料ガスが多孔板より噴
出する流速Ｇ以下にする。Since the purge gas flows between the perforated plate 4 and the shield plate 10, the source gas does not flow toward the shield plate 10, and no thin film adheres to the shield plate. Further, the purge gas has a role of a pressing gas for moving the source gas toward the substrate. However, care must be taken that the purge gas does not disturb the flow of the source gas on the substrate. Therefore, the outlet flow velocity P of the purge gas is set to be equal to or lower than the flow velocity G at which the raw material gas is ejected from the perforated plate.
【００１８】[0018]
【発明の効果】本発明は、多孔板の周辺部から出る原料
ガスが基板に接触する機会をもたずそのまま排出される
ことを遮蔽板によって防ぐ。しかも中央部に出るガスよ
り周辺部に出るガス量の方が多いのであるから原料ガス
がより有効に利用される。原料ガスの消費効率を高める
上に大きな効果がある。例えば有機金属（トリメチルガ
リウム）、アルシンを用いたＧａＡｓ基板上にＧａＡｓ
薄膜を堆積させる化学的気相成長法において図２のよう
な従来例の構成では原料利用効率は１０％であった。そ
れが本発明を用いた場合、消費効率が約１５％に上昇し
た。つまり原料消費効率が約１．５倍になったのであ
る。高価な原料ガスであるからその効果は多大である。According to the present invention, the shielding plate prevents the raw material gas discharged from the peripheral portion of the perforated plate from being directly discharged without having a chance to come into contact with the substrate. Moreover, since the amount of gas discharged to the peripheral portion is larger than the amount of gas discharged to the central portion, the source gas is more effectively used. There is a great effect on increasing the consumption efficiency of the source gas. For example, GaAs is formed on a GaAs substrate using organic metal (trimethylgallium) or arsine.
In the chemical vapor deposition method for depositing a thin film, the conventional material configuration as shown in FIG. 2 has a raw material utilization efficiency of 10%. When it used the present invention, the consumption efficiency increased to about 15%. That is, the raw material consumption efficiency has increased about 1.5 times. Since it is an expensive raw material gas, its effect is great.
【図１】本発明の実施例にかかる化学的気相成長装置の
内部の概略構成断面図。FIG. 1 is a schematic sectional view of the inside of a chemical vapor deposition apparatus according to an embodiment of the present invention.
【図２】従来例にかかる化学的気相成長装置の内部の概
略構成図。FIG. 2 is a schematic configuration diagram of the inside of a chemical vapor deposition apparatus according to a conventional example.
１ 基板 ２ 支持台 ３ 原料ガス ４ 多孔板 ５ パージガス ６ 回転軸 ７ 原料導入管 ８ 原料排出口 ９ 外套管 １０ 遮蔽板 １１ パージガス流路 １２ 多孔リング DESCRIPTION OF SYMBOLS 1 Substrate 2 Support base 3 Raw material gas 4 Perforated plate 5 Purge gas 6 Rotating shaft 7 Raw material introduction tube 8 Raw material discharge port 9 Outer tube 10 Shield plate 11 Purge gas flow path 12 Porous ring
Claims (1)
料ガスを導き多数の原料排出口を穿孔した多孔板から原
料ガスを加熱された基板に向けて噴出し原料ガスが気相
反応を起こして基板の上に薄膜を生成するようにした化
学的気相成長装置において、原料排出口より外側に筒状
の遮蔽板をその下端が多孔板より基板に接近した位置に
設け、遮蔽板と原料排出口との間に押し出し用パ−ジガ
スを流す構造を有することを特徴とする化学的気相成長
装置。1. A source gas is introduced into a processing chamber capable of being evacuated, and the source gas is ejected from a perforated plate having a large number of source outlets toward a heated substrate to cause a gas phase reaction. In a chemical vapor deposition apparatus in which a thin film is formed on a substrate by raising it, a cylindrical shielding plate is provided outside the raw material discharge port at a position where the lower end is closer to the substrate than the perforated plate, and the shielding plate is provided. A chemical vapor deposition apparatus having a structure in which a purge gas for extruding flows between the material and a material discharge port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1776998A JPH11200052A (en) | 1998-01-13 | 1998-01-13 | Chemical vapor phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1776998A JPH11200052A (en) | 1998-01-13 | 1998-01-13 | Chemical vapor phase growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11200052A true JPH11200052A (en) | 1999-07-27 |
Family
ID=11952934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1776998A Pending JPH11200052A (en) | 1998-01-13 | 1998-01-13 | Chemical vapor phase growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11200052A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1386981A1 (en) * | 2002-07-05 | 2004-02-04 | Ulvac, Inc. | A thin film-forming apparatus |
| JP2006524911A (en) * | 2003-04-30 | 2006-11-02 | アイクストロン、アーゲー | Semiconductor vapor deposition process and apparatus using two kinds of process gas pretreated on one side |
| JP2009068105A (en) * | 2007-09-10 | 2009-04-02 | Ind Technol Res Inst | Film coating system and isolating device thereof |
| JP2009235470A (en) * | 2008-03-26 | 2009-10-15 | Tokyo Electron Ltd | Film deposition system, and film deposition method |
| JP2009242879A (en) * | 2008-03-31 | 2009-10-22 | Ngk Insulators Ltd | Dlc film deposition method |
| JP2011190519A (en) * | 2010-03-16 | 2011-09-29 | Tokyo Electron Ltd | Film forming apparatus |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业***株式会社 | Film formation device |
-
1998
- 1998-01-13 JP JP1776998A patent/JPH11200052A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1386981A1 (en) * | 2002-07-05 | 2004-02-04 | Ulvac, Inc. | A thin film-forming apparatus |
| JP2006524911A (en) * | 2003-04-30 | 2006-11-02 | アイクストロン、アーゲー | Semiconductor vapor deposition process and apparatus using two kinds of process gas pretreated on one side |
| JP4700602B2 (en) * | 2003-04-30 | 2011-06-15 | アイクストロン、アーゲー | Semiconductor vapor deposition process and apparatus using two kinds of process gas pretreated on one side |
| JP2009068105A (en) * | 2007-09-10 | 2009-04-02 | Ind Technol Res Inst | Film coating system and isolating device thereof |
| US8316796B2 (en) | 2007-09-10 | 2012-11-27 | Industrial Technology Research Institute | Film coating system and isolating device thereof |
| JP2009235470A (en) * | 2008-03-26 | 2009-10-15 | Tokyo Electron Ltd | Film deposition system, and film deposition method |
| JP2009242879A (en) * | 2008-03-31 | 2009-10-22 | Ngk Insulators Ltd | Dlc film deposition method |
| JP2011190519A (en) * | 2010-03-16 | 2011-09-29 | Tokyo Electron Ltd | Film forming apparatus |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业***株式会社 | Film formation device |
| US10121931B2 (en) | 2011-03-15 | 2018-11-06 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Film formation device |
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