JPH03291381A - Vertical type cvd device - Google Patents
Vertical type cvd deviceInfo
- Publication number
- JPH03291381A JPH03291381A JP9422590A JP9422590A JPH03291381A JP H03291381 A JPH03291381 A JP H03291381A JP 9422590 A JP9422590 A JP 9422590A JP 9422590 A JP9422590 A JP 9422590A JP H03291381 A JPH03291381 A JP H03291381A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- inner tube
- film
- inert gas
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 22
- 239000011261 inert gas Substances 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000428 dust Substances 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 3
- 238000011109 contamination Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
この発明は縦型ＣＶＤ装置に関する。さらに詳しくはそ
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to a vertical CVD apparatus. More details relate to its improvement.
（ロ）従来の技術
ウェハ等の基板にＣＶＤ法により化学物質の薄膜を堆積
する装置として、縦型ＬＰ−ＣＶＤ装置が汎用されてい
る。(B) Conventional Technology A vertical LP-CVD apparatus is widely used as an apparatus for depositing a thin film of a chemical substance on a substrate such as a wafer by the CVD method.
該装置は第３図に示すように、密閉可能に構成された縦
型反応室（１０）と、該反応室下部に接続され反応室内
に上向に成膜物質（化学物質）のガス（以下反応ガスと
いう）を導入するガス導入管（１１）と、該ガス導入管
の上向開口端よりも上部でウェハ等の基板を支持しうる
基板支持部（１２）と、上記反応室に接続され反応室内
を排気しうる排気管（１３）とから主として構成されて
いる。As shown in Fig. 3, the apparatus includes a vertical reaction chamber (10) configured to be airtight, and a gas (hereinafter referred to as a chemical substance) of a film-forming substance (chemical substance) connected to the lower part of the reaction chamber and flowing upward into the reaction chamber. A gas introduction pipe (11) for introducing a reaction gas), a substrate support part (12) capable of supporting a substrate such as a wafer above the upward opening end of the gas introduction pipe, and a substrate support part (12) connected to the reaction chamber. It mainly consists of an exhaust pipe (13) that can exhaust the inside of the reaction chamber.
上記反応室はその下部にフランジ部（１４）が設けられ
ており、このフランジ部に上記ガス導入管（１１）およ
び排気管（１３）がそれぞれ気密に接続されている。ま
た上記基板支持部（１２）は支持台（１５）に取り付け
られている。The reaction chamber is provided with a flange portion (14) at its lower part, and the gas introduction pipe (11) and exhaust pipe (13) are each airtightly connected to this flange portion. Further, the substrate support section (12) is attached to a support stand (15).
上記ガス導入管（１１）は反応室内で上方向に曲げて配
設され、その先端開口から反応ガスが上向きに噴出され
る。この成膜方式は、例えばＳｉ。The gas introduction pipe (11) is bent upward in the reaction chamber, and the reaction gas is ejected upward from the opening at its tip. This film forming method uses Si, for example.
Ｎ４．ドープトポリＳｉ、ノンドープドポリＳｉ。N4. Doped poly-Si, non-doped poly-Si.
ドープトＳｉＯ＊、ノンドープト５ｉ０２等の成膜に用
いられる。It is used for forming films of doped SiO*, non-doped 5i02, etc.
また上記装置には、第４図に示すようにさらにインナー
チューブ（１６）を備えた２重チューブ仕様のものも汎
用されている。Furthermore, as shown in FIG. 4, the above-mentioned device is also commonly used with a double tube design, which is further equipped with an inner tube (16).
（ハ）発明が解決しようとする課題
上記のごときＣＶＤ装置でウェハ等に５ｉｓＮ＋等の膜
を形成する場合、基板支持部下方のフランジ部にも膜成
長が生じてしまう。このため第４図のインナーチューブ
を用いた仕様の装置を採用し、このインナーチューブ形
状をさらに第５図のように改良して、フランジ部への膜
成長を抑制するか、又はフランジ部を加熱することで成
長した膜が剥がれるのを抑制している。(c) Problems to be Solved by the Invention When forming a film such as 5isN+ on a wafer or the like using the above-mentioned CVD apparatus, film growth also occurs on the flange portion below the substrate support. For this reason, we adopted a device with specifications using the inner tube shown in Figure 4, and further improved the shape of this inner tube as shown in Figure 5 to suppress film growth on the flange, or to heat the flange. This prevents the grown film from peeling off.
しかしながら、前者のごとくインナーチューブの形状を
改良してもなお図中の斜線部に膜成長が生じる。However, even if the shape of the inner tube is improved as in the former case, film growth still occurs in the shaded area in the figure.
また後者のフランジ部の加熱による方法では、フランジ
部に成長する膜の膜厚が厚くなると膜自身にクラックが
発生しく応力等による）、膜剥がれが発生する。これは
ダストとなり、成膜したＬＳＩ等のウェハ基板に付着し
て、ウェハー歩留り低下を引き起こすことになる。Furthermore, in the latter method of heating the flange portion, if the film grown on the flange portion becomes thick, the film itself will crack (due to stress, etc.) and peeling of the film will occur. This turns into dust and adheres to the wafer substrate, such as LSI, on which a film has been formed, resulting in a decrease in wafer yield.
またさらにフランジ部の加熱は、真空度維持のためフラ
ンジ部の密閉度を上げる必要性から、０リングを使用す
るが、反応室内が約７００℃以上になると、この熱輻射
のためにフランジ部もさらに加熱され、０リングが焼き
付く等の不都合が生じる。Additionally, an O-ring is used to heat the flange due to the need to increase the degree of sealing of the flange to maintain the degree of vacuum, but when the temperature inside the reaction chamber exceeds approximately 700°C, the flange also heats due to heat radiation. Further heating may occur, causing problems such as the O-ring being seized.
この発明はかかる状況に鑑み為されたものであり、イン
ナーチューブの有無やその形状によらず、また反応室下
部ことにフランジ部を加熱することなく、効果的に膜成
長を防ぐことが可能な構成の縦型ＣＶＤ装置を提供しよ
うとするものである。This invention was made in view of the above situation, and it is possible to effectively prevent film growth regardless of the presence or absence of an inner tube or its shape, and without heating the flange part in the lower part of the reaction chamber. The purpose of this invention is to provide a vertical CVD apparatus with this configuration.
（ニ）課題を解決するための手段
かくしてこの発明によれば、密閉可能に構成された縦型
反応室と、該反応室下部に接続され反応室内に上向に成
膜物質のガスを導入するガス導入管と、該ガス導入管の
上向開口端よりも上部で基板を支持しうる基板支持部と
、上記反応室に接続され反応室内を排気しうる排気管を
有し、上記反応室内に支持された基板に減圧下で成膜物
質を成膜させるよう構成された縦型ＣＶＤ装置であって
、上記縦型反応室内で基板支持部よりも下部領域に、不
活性ガスを供給して当該下部領域への成膜物質のガスの
侵入を遮断しうるよう、不活性ガス供給路を上記反応室
下部に接続したことを特徴とする縦型ＣＶＤ装置が提供
される。(d) Means for Solving the Problems According to the present invention, there is provided a vertical reaction chamber configured to be airtight, and a gas of a film-forming substance connected to the lower part of the reaction chamber and introduced upward into the reaction chamber. A gas introduction pipe, a substrate support part capable of supporting a substrate above the upward opening end of the gas introduction pipe, and an exhaust pipe connected to the reaction chamber and capable of exhausting the inside of the reaction chamber; A vertical CVD apparatus configured to form a film-forming substance on a supported substrate under reduced pressure, the apparatus comprising: supplying an inert gas to a region below the substrate support part in the vertical reaction chamber; A vertical CVD apparatus is provided, characterized in that an inert gas supply path is connected to the lower part of the reaction chamber so as to block gas from a film-forming substance from entering the lower region.
この発明の縦型ＣＶＤ装置（以下この発明の装置という
）は、反応室内の所定領域に成膜物質のガスの侵入を遮
断しうる不活性ガス領域を形成する以外は、当該分野で
公知の縦型ＣＶＤ装置をその基本構成として用いること
ができる。The vertical CVD apparatus of the present invention (hereinafter referred to as the apparatus of the present invention) is a vertical CVD apparatus known in the art, except that an inert gas region is formed in a predetermined region in the reaction chamber to block the intrusion of gas of a film-forming substance. type CVD equipment can be used as its basic configuration.
上記所定領域とは、反応室において基板支持部よりも下
部領域を意味する。例えば装置構成に公知の縦型ＬＰ−
ＣＶＤ装置を利用する場合、そのフランジ部が相当する
。しかしこの部分に限定されない。従って不活性ガス供
給路が接続される反応室下部とは、上記所定領域に不活
性ガスを供給しうるにたる部位を意味する。この部位に
不活性ガス供給路は気密に接続されるが、この場合接続
は１カ所であってもよくま１こ複数カ所であってもよい
。上記領域に均等にかつ速やかに供給して、成膜物質の
ガス（以下反応ガスという）の流入を防止しうるバリア
を形成する点から、複数カ所に分岐して接続されること
が好ましい。この接続例については後述する実施例の記
載が参照される。The above-mentioned predetermined region means a region lower than the substrate support part in the reaction chamber. For example, the vertical type LP-
When using a CVD device, this corresponds to the flange portion thereof. However, it is not limited to this part. Therefore, the lower part of the reaction chamber to which the inert gas supply path is connected means the part where the inert gas can be supplied to the predetermined region. The inert gas supply path is airtightly connected to this location, and in this case, the connection may be at one location or may be at one or multiple locations. It is preferable to branch and connect to a plurality of locations in order to form a barrier that can prevent the inflow of film-forming substance gas (hereinafter referred to as reaction gas) by uniformly and quickly supplying the gas to the above region. For this connection example, refer to the description of the embodiment described later.
上記不活性ガスは、上記所定領域に反応ガスが侵入しな
いようその領域に存在しさえすれば良いが、これは静的
であっても動的でありもよい。動的な場合は定常的に所
定量が存在するように供給流量が調節される。不活性ガ
スの反応ガスへの拡散は生じてもよい。The inert gas need only be present in the predetermined region so that the reactive gas does not enter the region, and it may be static or dynamic. In the dynamic case, the supply flow rate is adjusted so that a predetermined amount is constantly present. Diffusion of inert gas into the reactant gas may occur.
この発明の装置に用いられる不活性ガスとしては、窒素
、アルゴン、ヘリウム等が挙げられる。Examples of the inert gas used in the apparatus of this invention include nitrogen, argon, helium, and the like.
（ホ）作用
この発明によれば、反応室内における基板支持部よりも
下方の領域には不活性ガスが存在し、これがバリアとな
って成膜物質のガスは基板支持部よりも下方には流入で
きないこととなる。(E) Effect According to the present invention, an inert gas exists in the region below the substrate support part in the reaction chamber, and this acts as a barrier so that the gas of the film-forming substance does not flow below the substrate support part. It becomes impossible.
以下実施例によりこの発明の詳細な説明するが、これに
よりこの発明は限定されるものではない。The present invention will be described in detail below with reference to Examples, but the present invention is not limited thereby.
（へ）実施例
第１図はこの発明の縦型ＣＶＤ装置の一例の構成説明図
である。同図において縦型ＣＶＤ装置（１）は、反応室
本体部（２１）とこの本体部の下部に気密に接続される
フランジ部（２２）とからなる密閉可能な縦型反応室（
２）と、この反応室内に設けられたインナーチューブ（
３）と、上記フランジ部に気密に接続され上記インナー
チューブ内に上向きに配設される反応ガス導入管（４）
と、フランジ部に気密に設けられ図示しない排気手段に
接続される排気管（５）と、基板支持ボート（６）及び
これを固定する支持台（７）と、フランジ部の排気管接
続位置よりも下部に気密に接続される不活性ガス供給管
（８）とから主として構成されている。なお（９）はウ
ェハである。(F) Embodiment FIG. 1 is an explanatory diagram of the configuration of an example of a vertical CVD apparatus of the present invention. In the same figure, a vertical CVD apparatus (1) is a sealable vertical reaction chamber (
2) and an inner tube (
3), and a reaction gas introduction pipe (4) airtightly connected to the flange portion and arranged upward within the inner tube.
, an exhaust pipe (5) that is airtightly provided on the flange part and connected to an exhaust means (not shown), a board support boat (6) and a support stand (7) that fixes it, and the exhaust pipe connection position of the flange part. It also mainly consists of an inert gas supply pipe (8) that is airtightly connected to the lower part. Note that (9) is a wafer.
反応ガス導入管（４）の上向き管路部はインナーチュー
ブ壁に沿って設けられ、その先端がフランジ部上端程度
にまで達するよう立ち上げられている。The upward conduit portion of the reaction gas introduction pipe (4) is provided along the wall of the inner tube, and is raised so that its tip reaches approximately the upper end of the flange portion.
排気管（５）は、インナーチューブ下端よりも上方に開
口するようフランジ部側壁の上端部に接続されている。The exhaust pipe (5) is connected to the upper end of the flange side wall so as to open above the lower end of the inner tube.
不活性ガス供給管（８）は、図示しない不活性ガスボン
ベ（この例では窒素ガスボンベ）から延設され、フラン
ジ部側壁において上記排気管接続位置よりも下方でかつ
その先端が第２図に示すように数箇所（この図では７カ
所）に分岐されて挿入接続されている。挿入された各管
路先端はいずれもインナーチューブ内に開口するように
設けられている。The inert gas supply pipe (8) extends from an inert gas cylinder (in this example, a nitrogen gas cylinder), not shown, and is located below the exhaust pipe connection position on the side wall of the flange portion, and has its tip as shown in FIG. It is branched and inserted and connected at several locations (seven locations in this figure). The tips of each of the inserted pipes are provided so as to open into the inner tube.
基板支持ボート（６）は、ウェハを反応室本体部内に支
持できるように支持台（７）に固定されている。The substrate support boat (6) is fixed to the support stand (7) so that the wafer can be supported within the reaction chamber main body.
以上のように構成された縦型ＣＶＤ装置において、基板
支持ボートに支持されたウェハに例えば５ｉｓＮ４等の
膜を形成する場合、不活性ガス供給管（８）により窒素
ガスを常時供給すると、反応室内のフランジ部及びイン
ナーチューブ下部には同図の斜線部のように窒素が充満
される状態となる。In the vertical CVD apparatus configured as described above, when forming a film of, for example, 5isN4 on a wafer supported on a substrate support boat, if nitrogen gas is constantly supplied through the inert gas supply pipe (8), the reaction chamber The flange part and the lower part of the inner tube are filled with nitrogen as shown by the shaded area in the figure.
この状態下で、上記反応室内に反応ガス導入管（４）に
より導入される反応ガス（すなわち５ｊｓＮ＋）は、図
中の矢印で示されるごとくインナーチューブ内を上向き
に流動される。この反応ガスを導入している間、フラン
ジ部及びインナーチューブ下部には窒素ガスが充満され
ているので、これがバリアとなってこの領域への反応ガ
スの流入は抑制されることとなる。これによって、この
領域でのＳｉ、Ｎａの低級膜等の膜成長を抑制すること
ができ、結果的にダストとなるパーティクルの発生は抑
制され、ウェハには５ｉｚＮｉ膜が汚染されることなく
形成される。Under this condition, the reaction gas (ie, 5jsN+) introduced into the reaction chamber by the reaction gas introduction pipe (4) flows upward in the inner tube as shown by the arrow in the figure. While the reactant gas is being introduced, the flange portion and the lower part of the inner tube are filled with nitrogen gas, which acts as a barrier and suppresses the inflow of the reactant gas into these regions. This makes it possible to suppress the growth of low grade films such as Si and Na in this region, and as a result, the generation of particles that become dust is suppressed, and the 5izNi film is formed on the wafer without being contaminated. Ru.
（ト）発明の効果
この発明によれば、膜形成中におけるダストの発生が抑
制されるので、ダストのない試料処理が可能となる。ま
たＣＶＤ装置の使用寿命が延び装置稼働率が大幅に向上
することとなる。(G) Effects of the Invention According to the present invention, since the generation of dust during film formation is suppressed, it is possible to process a sample without dust. Furthermore, the service life of the CVD apparatus will be extended and the operating rate of the apparatus will be significantly improved.
第１図はこの発明の縦型ＣＶＤ装置の一例の構成説明図
、第２図はフランジ部への不活性ガス供給管の接続例を
示す部分断面構成説明図、第３図及び第４図はそれぞれ
従来例の第１図相当図、第５図は従来の問題点を説明す
るための概略図である。
２・・・・・・縦型反応室、 ３・・・・・・インナ
ーチューブ、４・・・・・・反応ガス導入管、
５・・・・・・排気管、 ６・・・・・・基板支
持ボート、７・・・・・・支持台、
８・・・・・・不活性ガス供給管、
９・・・・・・ウェハ、
２１・・・・・・反応室本体部、２２・・・・・・フラ
ンジ部。
第１図
第３図
第４図
第５図FIG. 1 is a structural explanatory diagram of an example of a vertical CVD apparatus of the present invention, FIG. 2 is a partially cross-sectional structural explanatory diagram showing an example of connection of an inert gas supply pipe to a flange portion, and FIGS. 3 and 4 are FIG. 1 is a diagram corresponding to the conventional example, and FIG. 5 is a schematic diagram for explaining the problems of the conventional example. 2... Vertical reaction chamber, 3... Inner tube, 4... Reaction gas introduction pipe, 5... Exhaust pipe, 6...・Substrate support boat, 7...Support stand, 8...Inert gas supply pipe, 9...Wafer, 21...Reaction chamber main body, 22 ...Flange part. Figure 1 Figure 3 Figure 4 Figure 5
Claims (1)
に接続され反応室内に上向に成膜物質のガスを導入する
ガス導入管と、該ガス導入管の上向開口端よりも上部で
基板を支持しうる基板支持部と、上記反応室に接続され
反応室内を排気しうる排気管を有し、上記反応室内に支
持された基板に減圧下で成膜物質を成膜させるよう構成
された縦型ＣＶＤ装置であって、 上記縦型反応室内で基板支持部よりも下部領域に、不活
性ガスを供給して当該下部領域への成膜物質のガスの侵
入を遮断しうるよう、不活性ガス供給路を上記反応室下
部に接続したことを特徴とする縦型ＣＶＤ装置。1. A vertical reaction chamber configured to be airtight, a gas introduction pipe connected to the lower part of the reaction chamber and introducing gas of a film-forming substance upward into the reaction chamber, and an upper part above the upwardly opening end of the gas introduction pipe. and an exhaust pipe connected to the reaction chamber and capable of evacuating the inside of the reaction chamber, and configured to form a film-forming substance under reduced pressure on the substrate supported within the reaction chamber. The vertical CVD apparatus is configured to supply an inert gas to a region lower than the substrate support part in the vertical reaction chamber so as to block gas of a film-forming substance from entering the lower region. A vertical CVD apparatus characterized in that an inert gas supply path is connected to the lower part of the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9422590A JPH03291381A (en) | 1990-04-09 | 1990-04-09 | Vertical type cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9422590A JPH03291381A (en) | 1990-04-09 | 1990-04-09 | Vertical type cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03291381A true JPH03291381A (en) | 1991-12-20 |
Family
ID=14104372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9422590A Pending JPH03291381A (en) | 1990-04-09 | 1990-04-09 | Vertical type cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03291381A (en) |
-
1990
- 1990-04-09 JP JP9422590A patent/JPH03291381A/en active Pending
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