JPH04102227A - Initialization method for phase change type optical disk - Google Patents
Initialization method for phase change type optical diskInfo
- Publication number
- JPH04102227A JPH04102227A JP21887290A JP21887290A JPH04102227A JP H04102227 A JPH04102227 A JP H04102227A JP 21887290 A JP21887290 A JP 21887290A JP 21887290 A JP21887290 A JP 21887290A JP H04102227 A JPH04102227 A JP H04102227A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- optical disk
- phase change
- initialization
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 37
- 238000011423 initialization method Methods 0.000 title description 9
- 238000000034 method Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 23
- 239000011241 protective layer Substances 0.000 abstract description 19
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052774 Proactinium Inorganic materials 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 3
- 229910052745 lead Inorganic materials 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Optical Recording Or Reproduction (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、情報の記録再生で用いられる相変彫型光ディ
スクの初期化方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Field of Industrial Application) The present invention relates to a method for initializing a phase-change carved optical disc used for recording and reproducing information.
（従来の技術）
近年、大容量メモリーとして光ディスクが注目をあびて
いる。(Prior Art) In recent years, optical disks have been attracting attention as a large capacity memory.
光ディスクは、ＣＤ（コンパクトディスク）に代表され
る再生専用タイプと、電子式文書ファイルに代表される
１回記録可能な書込み専用タイプと、記録、消去が可能
な書替タイプとに大別される。Optical discs are broadly divided into playback-only types represented by CDs (compact discs), write-only types that can be recorded once and represented by electronic document files, and rewritable types that allow recording and erasure. .
また、書替タイプの内、レーザー光の照射により、記録
膜を結晶相と非晶質相とに可逆的に変化させて記録、消
去を行う、いわゆる、相変化型光ディスクが注目をあび
ている。Among the rewritable types, so-called phase-change optical disks, in which recording and erasing are performed by reversibly changing the recording film between a crystalline phase and an amorphous phase by laser beam irradiation, are attracting attention.
情報の記録再生で用いられる相変化型の光ディスクとし
ては、カルコゲナイド系材料を記録膜に用いた光ディス
クが検討されている。As a phase change type optical disk used for recording and reproducing information, an optical disk using a chalcogenide material for the recording film is being considered.
相変化型光ディスクの従来技術については、「書換え可
能光ディスク材料ヨ （奥田昌宏著、株式会社工業調査
会発行、１９８９年５月２０日初版発行）に詳しい。The conventional technology for phase change optical disks is detailed in ``Rewritable Optical Disk Materials'' (written by Masahiro Okuda, published by Kogyo Chosenkai Co., Ltd., first published on May 20, 1989).
相変化型光ディスクは、カルコゲナイド系記録膜の結晶
相、非晶質層の相変化を利用して情報の記録再生を行な
う。従来の相変化型光ディスクの動作は次のように行わ
れている。A phase change optical disk records and reproduces information by utilizing the crystal phase of a chalcogenide recording film and the phase change of an amorphous layer. A conventional phase change optical disk operates as follows.
１）スパッタ、蒸着などで成膜された記録膜は非晶質で
あるので、加熱アニール処理または光ビーム照射などで
、記録膜を結晶相とする。これを初期（結晶）化という
。1) Since the recording film formed by sputtering, vapor deposition, etc. is amorphous, the recording film is turned into a crystalline phase by heat annealing treatment or light beam irradiation. This is called initialization (crystallization).
２）短パルス、高パワーの記録パルスで結晶相の記録膜
を溶融、急冷し非晶質化して記録マークとする。2) A short, high-power recording pulse melts the crystalline recording film, rapidly cools it, and turns it into an amorphous state, forming recording marks.
３）長パルス、低パワーの消去パルスで非結晶質相の記
録マークを結晶化し、記録マークを消去する。3) Crystallize the recording mark in the amorphous phase with a long pulse and low power erasing pulse to erase the recording mark.
また、消去パワーを重畳させて、オーバーライトを行な
うことも検討されている。Further, it is also being considered to perform overwriting by superimposing erase power.
第４図は、従来の初期化方法で初期化した初期化トラッ
クＴの従来例を模式的に示す。成膜のままの記録膜を結
晶化させるレベルの光強度の連続光ビームを記録トラッ
クに照射してトラックＴ全面を結晶Ｃとしている。その
ため記録を行うと記録マークで大きく反射・率が変化す
るのでトラックＴの平均反射率も大きく変化する。FIG. 4 schematically shows a conventional example of an initialization track T initialized by a conventional initialization method. The entire surface of the track T is made into a crystal C by irradiating the recording track with a continuous light beam having a light intensity at a level that crystallizes the recording film as formed. Therefore, when recording is performed, the reflectance changes greatly depending on the recording mark, and the average reflectance of the track T also changes greatly.
（発明が解決しようとする課題）
従来は、前述の相変化型光ディスクの初期化は、一定強
度の連続光ビームを集光し記録トラックＴに照射するこ
とでなされていた。相変化型光ディスクの初期化トラッ
クＴに記録を行なうと相変化に伴う反射率変化か数１０
％と大きいので、記録によって光ビームのトラッキング
及びフォーカシングのためのサーボゲインが大きく変化
する。そのため記録によってトラッキング及びフォーカ
シングのサーボ系の動作が不安定となる問題があった。(Problems to be Solved by the Invention) Conventionally, the above-mentioned phase-change optical disk has been initialized by focusing a continuous light beam of constant intensity and irradiating it onto the recording track T. When recording is performed on the initialization track T of a phase change type optical disk, the reflectance changes due to the phase change.
%, the servo gain for tracking and focusing of the light beam changes greatly depending on recording. Therefore, there is a problem in that the operation of the tracking and focusing servo systems becomes unstable due to recording.
そこで、この発明は、初期化トラックに記録を行なって
も安定したトラッキング及びフォーカシング動作が得ら
れる相変化型光ディスクの初期化方法を提供することを
目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for initializing a phase change optical disk, which allows stable tracking and focusing operations to be obtained even when recording is performed on an initialization track.
［発明の構成コ
（課題を解決するための手段）
本発明は、上記課題を解決するために、光ビームを照射
し、照射部分に状態の変化を生じさせて情報を記録する
相変化型光ディスクの初期化方法であって、記録周波数
に対応したパルス列の光ビームで初期化するものである
。[Structure of the Invention (Means for Solving the Problems) In order to solve the above problems, the present invention provides a phase change optical disc that records information by irradiating a light beam and causing a state change in the irradiated area. In this initialization method, initialization is performed using a light beam of a pulse train corresponding to the recording frequency.
（作用）
相変化光ディスクの初期化を記録周波数に対応したパル
ス列の光ビームで行なうので、初期化トラックは結晶化
トラックと非晶質マークから形成される。これは記録ト
ラックの状態と同じである。(Operation) Since the phase change optical disk is initialized with a light beam of a pulse train corresponding to the recording frequency, the initialization track is formed from a crystallized track and an amorphous mark. This is the same state as the recording track.
また記録周波数に対応したパルス列で初期化を行なうの
で結晶化トラックと非晶質マークの割合も記録トラック
の場合に近くなる。Furthermore, since initialization is performed with a pulse train corresponding to the recording frequency, the ratio of crystallized tracks to amorphous marks is close to that of recording tracks.
従って、この発明による初期化トラックに記録を行なっ
てもトラックの平均反射率の変化は少ないので安定した
トラッキング及びフォーカシング動作が得られる。Therefore, even if recording is performed on the initialized track according to the present invention, there is little change in the average reflectance of the track, so stable tracking and focusing operations can be obtained.
（実施例）
以下、本発明の実施例を図面を参照して詳細に説明する
。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の初期化方法で用いる記録周波数に対
応したパルス列の先ビームＢの実施例を示す。FIG. 1 shows an embodiment of the leading beam B of the pulse train corresponding to the recording frequency used in the initialization method of the present invention.
第１図（ａ）はオーバーライト波形を初期化に用いる場
合である。成膜のままの非晶質の記録膜を結晶化させる
レベルＨ１の光強度の光パルスＰａに記録膜を溶融急冷
で非晶質化させるレベルＨ２の光強度の光パルスｐｂを
重畳させた光ビームＢで初期化を行なう。このオーバラ
イド初期化パルスＰａ、Ｐｂのパルス周波数は、記録周
波数に対応させる。FIG. 1(a) shows a case where an overwrite waveform is used for initialization. Light in which a light pulse Pa with a light intensity of level H1 that crystallizes an amorphous recording film as formed is superimposed with a light pulse pb of a light intensity of level H2 that melts and rapidly cools the recording film to make it amorphous. Beam B performs initialization. The pulse frequency of the override initialization pulses Pa and Pb is made to correspond to the recording frequency.
第１図（ｂ）は単一パルス波形を初期化に用いる場合で
ある。パルスｐｂの光強度は第１図（ａ）と同様に記録
膜を非晶質化させるレベルＨ２に設定され、そのパルス
周波数は記録周波数に対応するように設定される。FIG. 1(b) shows a case where a single pulse waveform is used for initialization. The light intensity of the pulse pb is set to a level H2 that makes the recording film amorphous, as in FIG. 1(a), and the pulse frequency is set to correspond to the recording frequency.
本発明の要件は、第１図（ａ）または第１図（ｂ）のよ
うなパルス列の光ビームＢを記録トラックＴに少なくと
も１回以上照射して初期化を行なうことである。従って
必要に応じてこれらの初期化パルスで同じ記録トラック
を複数回照射して初期化してもよい。A requirement of the present invention is to perform initialization by irradiating the recording track T with the light beam B having a pulse train as shown in FIG. 1(a) or FIG. 1(b) at least once or more. Therefore, if necessary, the same recording track may be irradiated multiple times with these initialization pulses for initialization.
また必要に応じて、連続光ビームで記録トラッりを結晶
化させてから本発明のパルス光ビームＢで初期化しても
よい。Further, if necessary, the recording tracks may be crystallized with a continuous light beam and then initialized with the pulsed light beam B of the present invention.
パルス波形についても、第１図（ａ）、（ｂ）に限定さ
れるものではなく、記録周波数に対応したパルスであれ
ばその他の波形を用いてもよい。The pulse waveform is not limited to those shown in FIGS. 1(a) and 1(b), and other waveforms may be used as long as the pulses correspond to the recording frequency.
第２図にこの初期化方法で初期化された記録トラックの
実施例を模式的に示す。この実施例では、連続溝の記録
トラックＴに初期化を行なった例を示す。この発明では
初期化したトラックＴは主として結晶Ｃのトラックと主
として非晶質のマークＭから構成される。この非晶質の
マークＭの間隔か記録周波数に対応している。この初期
化トラックＴに記録がなされる。FIG. 2 schematically shows an embodiment of a recording track initialized by this initialization method. This embodiment shows an example in which a continuous groove recording track T is initialized. In this invention, the initialized track T is mainly composed of a crystalline track C and a mainly amorphous mark M. The interval between these amorphous marks M corresponds to the recording frequency. Recording is performed on this initialization track T.
第３図に本発明の適用か可能な相変化型光ディスクＤの
層構成の１例を模式的に示す。本発明においても従来の
相変化型光ディスクの層構成を用いることができる。FIG. 3 schematically shows an example of the layer structure of a phase change optical disc D to which the present invention can be applied. Also in the present invention, the layer structure of a conventional phase change optical disk can be used.
第３図では本発明の適用が可能な相変化型光ディスクＤ
は、光デイスク基板１０と、この光デイスク基板１０上
に順次積層された保護層１１、記録層１２、保護層１３
、反射層１４、および保護層１５から構成されている。FIG. 3 shows a phase change optical disk D to which the present invention can be applied.
is an optical disk substrate 10, and a protective layer 11, a recording layer 12, and a protective layer 13 that are sequentially laminated on this optical disk substrate 10.
, a reflective layer 14, and a protective layer 15.
この層構成は単板の場合の例であり、記録層１２のある
面を内側にしてこの単板光デイスク２枚を貼り合わせ両
面使用の光ディスクとすることも可能である。This layer structure is an example of a single disk, and it is also possible to make a double-sided optical disk by bonding two single disk optical disks with the surface with the recording layer 12 on the inside.
また、用途に応じて保護層１１、保護層１３、反射層１
４、保護層１５は、それぞれ省略することも可能である
。In addition, depending on the application, protective layer 11, protective layer 13, reflective layer 1
4. The protective layer 15 can also be omitted.
光デイスク基板１０は、透明で経時変化か少ない材料、
例えばポリメチルメタクリレート（ＰＭＭＡ）のような
アクリル樹脂、ポリカーボネート樹脂、エポキシ樹脂、
スチレン樹脂、またはガラス等で形成される。記録フォ
ーマットに応じて連続溝、サンプルサーボマーク、プリ
フォーマットマーク等が形成される。The optical disk substrate 10 is made of a material that is transparent and has little change over time.
For example, acrylic resins such as polymethyl methacrylate (PMMA), polycarbonate resins, epoxy resins,
It is made of styrene resin, glass, etc. Continuous grooves, sample servo marks, preformat marks, etc. are formed depending on the recording format.
記録層１２は、光ビームＢか照射されることにより状態
が変化する材料で形成されている。このような相変化型
材料としては、ＧｅＴｅ系、ＴｅＳｅ系、Ｇｅ５ｂＳｅ
系、ＴｅＯｘ系、ＩｎＳｅ系、Ｇｅ５ｂＴｅ系等のカル
コゲナイド系アモルファス半導体材料やＩ ｎＳｂ系、
ＧａＳｂ系、Ｉｎ５ｂＴｅ系等の化合物半導体材料など
を用いることができる。この記録層１２は、真空蒸着法
やスパッタリング法等で形成することができる。この記
録層１２の膜厚としては、実用上数ｎｌ〜数μ■範囲で
あることが好ましい。The recording layer 12 is made of a material whose state changes when irradiated with the light beam B. Such phase change materials include GeTe, TeSe, and Ge5bSe.
chalcogenide-based amorphous semiconductor materials such as TeOx-based, InSe-based, Ge5bTe-based, InSb-based,
Compound semiconductor materials such as GaSb-based and In5bTe-based materials can be used. This recording layer 12 can be formed by a vacuum deposition method, a sputtering method, or the like. The thickness of the recording layer 12 is preferably in the range of several nanoliters to several micrometers in practical terms.
保護層１１．１３は、記録層１２を挾むように配設され
ており、記録ビームＢの照射により記録層１２が、飛散
したり、穴がおいてしまうことを防止する役割を有して
いる。また記録のときの記録層の加熱、冷却の熱拡散を
制御する役割もある。The protective layers 11 and 13 are disposed to sandwich the recording layer 12, and have the role of preventing the recording layer 12 from being scattered or having holes caused by the irradiation of the recording beam B. It also has the role of controlling thermal diffusion during heating and cooling of the recording layer during recording.
この保護層１１．１３は、ＳｉＯ２＋ Ｓ ｉＯ＋Ａ
ｐ Ｎ、ＡＭ ２０３．Ｚ Ｔ０２ 、Ｔ１０２Ｔａ２
０３ 、ＺｎＳ、Ｓ ｉ、またはＧｅ等を真空蒸着法や
スパッタリング法などで形成することができる。保護層
１１．１３の膜厚は実用上数ｒ＋ｍ〜数μｍあることが
好ましい。This protective layer 11.13 is made of SiO2+ SiO+A
p N, AM 203. Z T02, T102Ta2
03, ZnS, Si, Ge, or the like can be formed by a vacuum evaporation method, a sputtering method, or the like. Practically speaking, the thickness of the protective layer 11.13 is preferably from several r+m to several μm.
反射層１４は、記録層の光学的変化を光学的にエンハン
スして再生信号を増大させる効果と記録層の冷却効果が
ある。この反射層１４は、Ａｕ、Ａｌ、Ｃｕ５Ｎｉ−Ｃ
ｒ合金等の金属膜を真空蒸着法やスパッタリング法など
で形成することができる。反射層の膜厚は、実用上数ｎ
ｌ１ｌ〜数μＷあることが好ましい。The reflective layer 14 has the effect of optically enhancing the optical changes in the recording layer to increase the reproduced signal and the effect of cooling the recording layer. This reflective layer 14 is composed of Au, Al, Cu5Ni-C
A metal film such as r-alloy can be formed by a vacuum evaporation method, a sputtering method, or the like. The thickness of the reflective layer is practically several n.
It is preferable that the electric current is between 11l and several μW.
保護層１５は、相変化光ディスクを取り扱う上での、傷
、はこり等を防止するために配設されるものであり、通
常、紫外線硬化樹脂などにより形成される。この保護層
１５は、例えば紫外線硬化樹脂をスピンコード法により
反射層１４の表面に塗布し、紫外線を照射して硬化させ
て形成する。The protective layer 15 is provided to prevent scratches, chips, etc. during handling of the phase change optical disk, and is usually made of ultraviolet curing resin or the like. The protective layer 15 is formed, for example, by applying an ultraviolet curable resin onto the surface of the reflective layer 14 by a spin-coding method and curing it by irradiating ultraviolet rays.
この保護層１５の膜厚としては、実用上数ｕｍ〜数百μ
■範囲であることが好ましい。In practical terms, the thickness of this protective layer 15 is from several um to several hundreds of microns.
(2) It is preferable that it is within the range.
しかして、本発明にあっては、相変化型光ディスクＤの
初期化を記録周波数に対応したパルス列Ｐａ、Ｐｂの光
ビームＢで行なうので、初期化トラックＴは結晶化トラ
ックＣと非晶質マークＭがら形成される。これは記録ト
ラックの状態と同じである。また記録周波数に対応した
パルス列で初期化を行なうので結晶化トラックＣと非晶
質マ−りＭの割合も記録トラックの場合に近くなる。According to the present invention, since the phase change optical disk D is initialized with the light beam B of the pulse train Pa and Pb corresponding to the recording frequency, the initialization track T is separated by the crystallization track C and the amorphous mark. It is formed from M. This is the same state as the recording track. Furthermore, since initialization is performed with a pulse train corresponding to the recording frequency, the ratio of crystallized tracks C to amorphous marks M is also close to that of the recording track.
従って、この発明による初期化トラックＴに記録を行な
ってもトラックＴの平均反射率の変化は少ないので安定
したトラッキング及びフォーカシング動作が得られる。Therefore, even if recording is performed on the initialized track T according to the present invention, there is little change in the average reflectance of the track T, so stable tracking and focusing operations can be obtained.
なお、本発明は上記一実施例には限らず、要旨を変えな
い範囲で種々変形実施可能であることは勿論である。It should be noted that the present invention is not limited to the above-mentioned embodiment, and it goes without saying that various modifications can be made without changing the gist.
［発明の効果］
以上説明したように本発明によれば、従来の相変化光デ
ィスクの初期化方法よりも、記録したときのトラッキン
グ及びフォーカシングの動作が安定な初期化方法を提供
することができる。また初期化で非晶質マークを形成す
るので記録膜の記録特性や欠陥などをチエツクすること
も可能であるといった効果を奏する。[Effects of the Invention] As described above, according to the present invention, it is possible to provide an initialization method that provides more stable tracking and focusing operations during recording than conventional initialization methods for phase change optical discs. Furthermore, since an amorphous mark is formed during initialization, it is possible to check the recording characteristics and defects of the recording film.
第１図は本発明の初期化方法で用いる記録周波数に対応
したパルス列、の光ビームの状態を示す図、第２図はこ
の発明の実施例に係わる相変化光ディスクの初期化方法
の概略を模式的に示す図、第３図はこの発明の適用され
る相変化光デイスク記録媒体の断面図、第４図は従来の
相変化光ディスクの初期化トラックを模式的に示す図で
ある。
１０・・・光デイスク基板、１１・・・保護層、１２・
・・記録層、１３・・・保護層、１４・・・保護層、１
５・・・保護層、Ｂ・・・光ビーム、Ｄ・・・先ディス
ク。
出願人代理人 弁理士 鈴江武彦
（ｂ）
第１図
第２図
第４図FIG. 1 is a diagram showing the state of a light beam of a pulse train corresponding to the recording frequency used in the initialization method of the present invention, and FIG. 2 is a schematic diagram showing an outline of the initialization method for a phase change optical disk according to an embodiment of the present invention. FIG. 3 is a sectional view of a phase change optical disk recording medium to which the present invention is applied, and FIG. 4 is a diagram schematically showing an initialization track of a conventional phase change optical disk. DESCRIPTION OF SYMBOLS 10... Optical disk substrate, 11... Protective layer, 12...
... Recording layer, 13... Protective layer, 14... Protective layer, 1
5... Protective layer, B... Light beam, D... Destination disk. Applicant's agent Patent attorney Takehiko Suzue (b) Figure 1 Figure 2 Figure 4
Claims (2)
させることにより情報を記録する相変化型光ディスクの
初期化方法であって、 記録周波数に対応したパルス列の光ビームで初期化する
ことを特徴とする相変化型の情報記録媒体の初期化方法
。(1) A method for initializing a phase-change optical disc in which information is recorded by irradiating a light beam to cause a state change in the irradiated area, which initializes with a light beam of a pulse train corresponding to the recording frequency. A method for initializing a phase change type information recording medium, characterized by:
特徴とする請求項１記載の相変化型光ディスクの初期化
方法。(2) The method for initializing a phase change optical disk according to claim 1, wherein the pulse train has an overwrite waveform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21887290A JPH04102227A (en) | 1990-08-22 | 1990-08-22 | Initialization method for phase change type optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21887290A JPH04102227A (en) | 1990-08-22 | 1990-08-22 | Initialization method for phase change type optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04102227A true JPH04102227A (en) | 1992-04-03 |
Family
ID=16726628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21887290A Pending JPH04102227A (en) | 1990-08-22 | 1990-08-22 | Initialization method for phase change type optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04102227A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256286B1 (en) | 1997-02-21 | 2001-07-03 | Nec Corporation | Method for initiating a phase change recording medium |
| US6278674B1 (en) | 1996-12-13 | 2001-08-21 | Nec Corporation | Phase change optical disk initializing apparatus |
| WO2006121128A1 (en) * | 2005-05-12 | 2006-11-16 | Pioneer Corporation | Information recording medium, information recording device and method, and computer program for record control |
-
1990
- 1990-08-22 JP JP21887290A patent/JPH04102227A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6278674B1 (en) | 1996-12-13 | 2001-08-21 | Nec Corporation | Phase change optical disk initializing apparatus |
| US6256286B1 (en) | 1997-02-21 | 2001-07-03 | Nec Corporation | Method for initiating a phase change recording medium |
| WO2006121128A1 (en) * | 2005-05-12 | 2006-11-16 | Pioneer Corporation | Information recording medium, information recording device and method, and computer program for record control |
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