JPH0372075A - Apparatus for producing silicon carbide film - Google Patents
Apparatus for producing silicon carbide filmInfo
- Publication number
- JPH0372075A JPH0372075A JP20742689A JP20742689A JPH0372075A JP H0372075 A JPH0372075 A JP H0372075A JP 20742689 A JP20742689 A JP 20742689A JP 20742689 A JP20742689 A JP 20742689A JP H0372075 A JPH0372075 A JP H0372075A
- Authority
- JP
- Japan
- Prior art keywords
- work
- silicon carbide
- reaction tube
- source
- supply pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 58
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 58
- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 230000006698 induction Effects 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 48
- 238000009792 diffusion process Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体に熱処理を施す拡散炉用の反応管等の
筒状基体の内面に炭化珪素被膜を形成するのに好適に用
いられる炭化珪素膜製造装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a silicon carbide film suitable for forming a silicon carbide film on the inner surface of a cylindrical substrate such as a reaction tube for a diffusion furnace for heat-treating semiconductors. The present invention relates to a silicon film manufacturing apparatus.
〔従来の技術及び発明が解決しようとする課題〕半導体
拡散炉用の反応管としては筒状の炭化珪素質基体の内面
に高純度の炭化珪素被膜を形成したものが好ましいが、
このような反応管を製造する場合、基体内面に高純度炭
化珪素被膜を形成する方法としては、珪素源と炭素源と
を含む原料ガスを基体内に供給し、常圧又は減圧下で加
熱して基体内面に炭化珪素膜を蒸着する化学気相蒸着（
ＣＤＶ）法が通常用いられている。[Prior Art and Problems to be Solved by the Invention] As a reaction tube for a semiconductor diffusion furnace, it is preferable to use a cylindrical silicon carbide substrate with a high-purity silicon carbide coating formed on the inner surface.
When manufacturing such a reaction tube, a method of forming a high-purity silicon carbide coating on the inner surface of the substrate is to supply a raw material gas containing a silicon source and a carbon source into the substrate, and heat it under normal pressure or reduced pressure. Chemical vapor deposition (chemical vapor deposition) in which a silicon carbide film is deposited on the inner surface of the substrate using
CDV) method is commonly used.
しかし、このような方法で得られた炭化珪素膜は緻密性
、均一性、均質性に劣り、破損や剥離といった不都合を
生じる。場合がある。即ち、拡散炉用反応管などのよう
に長尺筒状の基体内面に化学気相蒸着法により炭化珪素
膜を形成する場合、加熱下において筒状基体の一端開口
部より原料ガスを供給するが、この場合原料ガスの供給
部付近、即ち一端側はど厚い被膜となり易く、反応条件
の変化が緻密性にも影響し、緻密性、均一性、均質性の
高い被膜を得ることが困難である。このため。However, the silicon carbide film obtained by such a method is inferior in density, uniformity, and homogeneity, resulting in disadvantages such as breakage and peeling. There are cases. That is, when forming a silicon carbide film on the inner surface of a long cylindrical substrate such as a reaction tube for a diffusion furnace by chemical vapor deposition, a raw material gas is supplied from an opening at one end of the cylindrical substrate under heating. In this case, the film tends to be thick near the raw material gas supply part, that is, on one end side, and changes in reaction conditions also affect the density, making it difficult to obtain a film with high density, uniformity, and homogeneity. . For this reason.
このような方法により被膜を形成した半導体拡散炉用反
応管は、半導体の熱処理中に被膜の破損。Reaction tubes for semiconductor diffusion furnaces with coatings formed using this method suffer from damage to the coating during heat treatment of semiconductors.
剥離を起こしやすく、不純物の通過や拡散により。It is prone to peeling, due to the passage and diffusion of impurities.
内部の半導体を汚染する場合がある。It may contaminate internal semiconductors.
このような問題を解決するため、筒状の外殻内に筒状電
極を配し、該筒状電極内に被処理炭化珪素管を配設して
該炭化珪素管内にその一端側から原料ガスを供給し、上
記外殻外周に移動可能に配設されたリング状の誘導加熱
器により筒状電極内を帯域状に誘導加熱すると共に、誘
導加熱器を外殻に沿って移動させることによって加熱帯
域、即ち反応領域を移動させ、原料ガスの似絵側の端部
と他端部とで膜厚や緻密性に差が生じるのを防止した被
膜形成装置が提案されている（特公昭６０−６３０４号
公報）。In order to solve such problems, a cylindrical electrode is placed inside a cylindrical outer shell, a silicon carbide tube to be treated is placed inside the cylindrical electrode, and the raw material gas is introduced into the silicon carbide tube from one end side. The inside of the cylindrical electrode is induction-heated in a band-like manner by a ring-shaped induction heater movably disposed around the outer periphery of the outer shell, and the induction heater is moved along the outer shell to perform heating. A film forming apparatus has been proposed in which the zone, that is, the reaction region is moved to prevent differences in film thickness and density between the end of the material gas on the similitude side and the other end (Japanese Patent Publication No. 1983- 6304).
しかし、このような装置にあっては、加熱部（反応領域
）とガス導入部との距離が変化し、その間の温度分布、
ガス組成（炭素源／珪素源比、原料ガス／キャリヤーガ
ス比等）の制御が困難であり、このため膜厚の均一性は
得られ易いものの、膜が多層横進になり易いなど、均質
性の点て問題を生しる場合がある。However, in such devices, the distance between the heating section (reaction region) and the gas introduction section changes, and the temperature distribution between them changes.
It is difficult to control the gas composition (carbon source/silicon source ratio, raw material gas/carrier gas ratio, etc.), and although it is easy to obtain uniform film thickness, it is difficult to achieve homogeneity, such as the film being prone to multilayer traverse. This may cause problems.
本発明は、上記事情に鑑みなされたもので、長尺の筒状
物であっても、その内面全面に均一性。The present invention was developed in view of the above circumstances, and it is possible to achieve uniformity over the entire inner surface of a long cylindrical object.
均質性の優れた高純度炭化珪素膜を確実に形威し得、半
導体拡散炉用の炭化珪素質反応管の製造に好適に用いら
れる炭化珪素膜製造装置を提供することを目的とする。It is an object of the present invention to provide a silicon carbide film manufacturing apparatus that can reliably form a high purity silicon carbide film with excellent homogeneity and is suitably used for manufacturing a silicon carbide reaction tube for a semiconductor diffusion furnace.
本発明は、上記目的を連取するため、筒状の被処理物内
面に高純度炭化珪素被＋ｌＷを化学気相蒸着法によって
形成する装置であって、上記筒状の被処理物を収容する
反応管と、この反応管内を加熱する加熱機構と、先端部
が上記反応管内をその軸方向に沿って移動し得るように
配設され、その先端部から上記反応管内に収容された筒
状の被処理物内に炭素源と珪素源とを含む原料ガスを併
給するガス供給管と、このガス供給管を移動させるガス
供給管移動機構とを具備してなることを特徴とする炭化
珪素膜製造装置を提供する。In order to achieve the above-mentioned objects, the present invention provides an apparatus for forming a high-purity silicon carbide coating on the inner surface of a cylindrical workpiece by a chemical vapor deposition method, and a reaction system for accommodating the cylindrical workpiece. A tube, a heating mechanism for heating the inside of the reaction tube, and a tip portion disposed so as to be able to move inside the reaction tube in the axial direction, and a cylindrical cover housed in the reaction tube from the tip portion. A silicon carbide film manufacturing apparatus comprising: a gas supply pipe that co-feeds a raw material gas containing a carbon source and a silicon source into the processed material; and a gas supply pipe moving mechanism that moves the gas supply pipe. I will provide a.
本発明の炭化珪素膜製造装置を用いて筒状の被処理物の
内面に炭化珪素被膜を形成する場合、該被処理物を反応
管に収容した後、加熱機構により反応管内を加熱し、ガ
ス供給管先端部から珪素源と炭素源とを含む原料ガスを
被処理物内に供給すると共に、ガス供給管の先端を被処
理物内に軸方向に沿って移動させて筒状被処理物の内面
全面に炭化珪素を化学気相蒸着させ、炭化珪素被膜を形
成する。なお、この際反応管内を減圧とすることが好ま
しい。When forming a silicon carbide film on the inner surface of a cylindrical workpiece using the silicon carbide film manufacturing apparatus of the present invention, after the workpiece is placed in a reaction tube, the inside of the reaction tube is heated by a heating mechanism, and a gas A raw material gas containing a silicon source and a carbon source is supplied from the tip of the supply pipe into the workpiece, and the end of the gas supply pipe is moved into the workpiece along the axial direction to remove the cylindrical workpiece. Chemical vapor deposition of silicon carbide is performed on the entire inner surface to form a silicon carbide film. At this time, it is preferable to reduce the pressure inside the reaction tube.
而して、Ｐ発明の炭化珪素膜製造装置によれば、ガス供
給管の先端部（ガス噴出部）が筒状被処理物内に原料ガ
スを供給しつつ、該被処理物内を軸方向に沿って移動す
ることにより、被処理物が長尺な筒状物であっても、そ
の内面に均一、均質な蒸着膜が得られる反応領域にたえ
ず新しい原料ガスを供給することができ、更に被処理物
の一端側であっても他端側であっても同一の条件で気相
合成及び蒸着を行なうことができるので、被処理物内面
全面に均一、均質で緻密な炭化珪素Ｉ摸を確実に形成す
ることができる。従って、被処理物として炭化珪素管を
用いることにより、被ｌ摸の破損。According to the silicon carbide film manufacturing apparatus of P invention, the tip part (gas ejection part) of the gas supply pipe supplies the raw material gas into the cylindrical workpiece while axially moving the inside of the workpiece. Even if the object to be treated is a long cylindrical object, new raw material gas can be continuously supplied to the reaction area where a uniform and homogeneous vapor deposited film can be obtained on the inner surface of the object. Since vapor phase synthesis and vapor deposition can be carried out under the same conditions whether it is on one end of the object to be treated or the other end, uniform, homogeneous and dense silicon carbide I can be deposited on the entire inner surface of the object. It can be formed reliably. Therefore, by using a silicon carbide tube as the object to be treated, damage to the object can be avoided.
剥離といった不都合を生したり、熱処理中に不純物の通
過や拡散により内部の半導体を汚染するようなことのな
い半導体拡散炉用の炭化珪素質反応管を得ることができ
る。It is possible to obtain a silicon carbide reaction tube for a semiconductor diffusion furnace that does not cause inconveniences such as peeling or contaminate the semiconductor inside due to the passage or diffusion of impurities during heat treatment.
以下１本発明の一実施例につき図面を参照して説明する
。An embodiment of the present invention will be described below with reference to the drawings.
図面は、半導体拡散炉用反応管の筒状炭化珪素質基体の
内面に高純度炭化珪素被膜を形成するのに好適に使用さ
れる本発明の一実施例に係る炭化珪素膜製造装置を示す
もので、この炭化珪素膜製造装置１は、箱型基台２の上
面に立設された円筒状反応管３を具備する。なお、この
円筒状反応管３は石英等から形成されている。この反応
管３内には、その軸方向に沿って円筒状の黒鉛電極４が
配置固定され、この電ｒｉ４と反応管３との間にはカー
ボン繊維等の断熱材が介装されて断熱層５が形成されて
いる。また、反応管３の外側には、上記電極４を誘導加
熱する水冷誘導コイル６が配設されており、上記電極４
と共に誘導加熱機構を構成している。なお１反応管３の
」二端開ロ部は中央部に排気管７を有する蓋体８により
Ｏリング（図示せず）を介して気密に閉塞されている。The drawing shows a silicon carbide film manufacturing apparatus according to an embodiment of the present invention, which is suitably used to form a high-purity silicon carbide film on the inner surface of a cylindrical silicon carbide substrate of a reaction tube for a semiconductor diffusion furnace. This silicon carbide film manufacturing apparatus 1 includes a cylindrical reaction tube 3 erected on the upper surface of a box-shaped base 2 . Note that this cylindrical reaction tube 3 is made of quartz or the like. A cylindrical graphite electrode 4 is arranged and fixed in the reaction tube 3 along its axial direction, and a heat insulating material such as carbon fiber is interposed between the electrode 4 and the reaction tube 3 to form a heat insulating layer. 5 is formed. Further, a water-cooled induction coil 6 for inductively heating the electrode 4 is disposed outside the reaction tube 3.
Together, they constitute an induction heating mechanism. Note that the opening at both ends of the reaction tube 3 is hermetically closed by a lid 8 having an exhaust pipe 7 in the center via an O-ring (not shown).
」二記載台２内には、原料ガスを反応管３内（電極４内
）に供給するガス供給管９が上記反応管３の軸方向に沿
って移動可能に配設されている。この供給管９の基端部
は、基台２内に互に所定間隔離間して立設された２本の
支柱１０．１１にそれぞれ摺動可能に取り付けられた摺
動リング１２ａ。A gas supply pipe 9 for supplying raw material gas into the reaction tube 3 (inside the electrode 4) is disposed in the writing table 2 so as to be movable along the axial direction of the reaction tube 3. The base end of the supply pipe 9 is a sliding ring 12a that is slidably attached to two support columns 10.11 that are set up in the base 2 at a predetermined distance from each other.
１２ｂ間に架設固定された支持棒１３に固定されている
。上記一方の摺動リング１２ａには、その端部に突起１
４が突設されていると共に、この突起１４は基台２の底
壁に固定された減速モータ１５の回転軸１６と支柱１０
の先端側部に突設されたピン１７との間に巻装された邸
動用チェーン↓８に固定され、減速モーター１５の作動
により駆動用チェーン１８が上下方向に移動すると共に
、この移動と一体に摺動リング１２ａ、１２ｂ及び支持
棒１３が移動し、従ってガス供給管９が一体に移動する
ようになっている。一方、上記ガス供給管９の先端部１
９は、該ガス供給管９の下降限位置において、上記反応
管３が立設された基台２のそ上壁の該反応管３中心部に
対応する箇所に穿設された挿通孔２０内に挿入されてい
る。It is fixed to a support rod 13 installed and fixed between 12b. One of the sliding rings 12a has a protrusion 1 at its end.
4 is provided protrudingly, and this protrusion 14 is connected to the rotating shaft 16 of the deceleration motor 15 fixed to the bottom wall of the base 2 and the support column 10.
The driving chain ↓8 is fixed to the driving chain ↓8, which is wound between the pin 17 protruding from the side of the tip of the The sliding rings 12a, 12b and the support rod 13 move, so that the gas supply pipe 9 moves together. On the other hand, the tip 1 of the gas supply pipe 9
Reference numeral 9 indicates an insertion hole 20 bored at a location corresponding to the center of the reaction tube 3 on the upper wall of the base 2 on which the reaction tube 3 is erected, at the lowering limit position of the gas supply tube 9. is inserted into.
次に、上記炭化珪素膜製造装置１を用いて半導体拡散炉
用反応管の筒状炭化珪素質基体の内面に高純度炭化珪素
被膜を形成する場合は、まず被処理物である筒状の炭化
珪素質基体２１を電極４内に配設し、蓋体８で反応管３
を閉塞した後、排気管７から真空ポンプ等により反応管
３内の空気を排気して反応管３内を減圧とする。この減
圧状態を保持したまま、水冷誘導コイル６に通電して電
極４内を誘導加熱し、ガス供給管９の先端部１９より炭
素源と珪素源とを含有する原料ガスを炭化珪素質基体２
１内に噴出させると共に、減速モータ１５を作動させ、
ガス供給管９をゆっくりと上昇させて炭化珪素質基体内
面の下端部から上端部までの全面に亘って同一の条件で
気相合成及び蒸着を行なうものである。なお、この場合
、原料ガスとしては炭素源と珪素源とを含有するもので
あり、具体的にはメチルトリクロロシラン等が好適に使
用され、この際通常はキャリヤーガスとして水素ガスが
併用される。また、炭素源と珪素源とを別々のガスから
供給することもできる。この場合、ガス供給管９を二重
構造とすることにより。Next, when forming a high-purity silicon carbide film on the inner surface of a cylindrical silicon carbide substrate of a reaction tube for a semiconductor diffusion furnace using the silicon carbide film manufacturing apparatus 1 described above, first, the cylindrical carbonized A silicon substrate 21 is placed inside the electrode 4, and the reaction tube 3 is closed with the lid 8.
After closing, the air inside the reaction tube 3 is exhausted from the exhaust pipe 7 using a vacuum pump or the like to reduce the pressure inside the reaction tube 3. While maintaining this reduced pressure state, electricity is applied to the water-cooled induction coil 6 to inductively heat the inside of the electrode 4, and a raw material gas containing a carbon source and a silicon source is supplied to the silicon carbide substrate 2 from the tip 19 of the gas supply pipe 9.
1 and operates the deceleration motor 15,
The gas supply pipe 9 is slowly raised to perform vapor phase synthesis and vapor deposition over the entire inner surface of the silicon carbide substrate from the lower end to the upper end under the same conditions. In this case, the raw material gas contains a carbon source and a silicon source, and specifically, methyltrichlorosilane or the like is preferably used, and in this case, hydrogen gas is usually used in combination as a carrier gas. Moreover, the carbon source and the silicon source can also be supplied from separate gases. In this case, by making the gas supply pipe 9 a double structure.
原料ガスに対して任意のキャリヤーガス流量が容易に選
択できる。また、二種類の原料ガスを別々に供給でき、
ガス供給管９内での反応を防ぐことができ、反応管内へ
設定ガス流量で供給できる等の利点がある。反応管内の
加熱温度は１↓ＯＯ〜１５００℃とすることができ、ま
た反応管内を１〜１００Ｔｏｒｒ程度の減圧とすること
が釘ましい。Any carrier gas flow rate can be easily selected for the source gas. In addition, two types of raw material gas can be supplied separately,
There are advantages such as being able to prevent reactions within the gas supply pipe 9 and supplying the gas into the reaction pipe at a set flow rate. The heating temperature inside the reaction tube can be set to 1↓OO to 1500°C, and the pressure inside the reaction tube should preferably be reduced to about 1 to 100 Torr.
更に、ガス供給管９の移動速度は、希望する膜厚と処理
対象物の大きさ、その他の処理条件とから決定する必要
があるが２００ｎｗｎ／ｈｒ程度とすることが好ましい
。Further, the moving speed of the gas supply pipe 9 needs to be determined based on the desired film thickness, the size of the object to be treated, and other processing conditions, but is preferably about 200 nwn/hr.
上記炭化珪素膜製造装置ｌによれば、ガス供給管９の先
端部（ガス噴出部）１０が筒状の被処理物２１内に原料
ガスを供給しつつ、該被処理物２１内を移動することに
より、その内面の均一均質な蒸着膜が得られる反応領域
にたえず新しい原料ガスが供給され、更に被処理物２（
内面の下端部から上端部までの全面に亘って同一の条件
で気相合成及び蒸着が行なわれ、被処理物２↓の内面全
面に均一、均質で緻密な炭化珪素膜が確実に形成される
。According to the silicon carbide film manufacturing apparatus I, the tip portion (gas ejection portion) 10 of the gas supply pipe 9 moves within the cylindrical workpiece 21 while supplying raw material gas into the workpiece 21. As a result, new raw material gas is constantly supplied to the reaction region where a uniform and homogeneous deposited film can be obtained on the inner surface, and furthermore, the workpiece 2 (
Vapor phase synthesis and vapor deposition are performed under the same conditions over the entire inner surface from the lower end to the upper end, and a uniform, homogeneous, and dense silicon carbide film is reliably formed over the entire inner surface of object 2↓. .
従って、被処理物２１として炭化珪素管を用いることに
より、被膜の破損、剥離といった不都合を生じたり、熱
処理中に不純物の通過や拡散により内部の半導体を汚染
するようなことのない半導体拡散炉用の炭化珪素質反応
管を得ることができるものである。Therefore, by using a silicon carbide tube as the object to be treated 21, it is possible to use a semiconductor diffusion furnace without causing inconveniences such as damage or peeling of the coating, or contaminating the internal semiconductor due to passage or diffusion of impurities during heat treatment. This makes it possible to obtain a silicon carbide reaction tube.
なお、本発明の炭化珪素膜製造装置は、上記実施例に限
定されるものではなく、例えば加熱機構を誘導加熱に代
えて抵抗加熱、赤外放射加熱、レーザービーム加熱等の
他の方法による加熱機構とすることや反応管を水平に配
置することは何ら差し支えなく、またガス供給管の移動
機構や各部材の形状及びそれらの配置等も本発明の要旨
の範囲内において種々変更して差し支えない。Note that the silicon carbide film manufacturing apparatus of the present invention is not limited to the above-mentioned embodiments, and for example, the heating mechanism may be replaced with induction heating by other methods such as resistance heating, infrared radiation heating, laser beam heating, etc. There is no problem with using a mechanism or arranging the reaction tube horizontally, and the movement mechanism of the gas supply pipe, the shape of each member, their arrangement, etc. may be changed in various ways within the scope of the gist of the present invention. .
以上説明したように、本発明の炭化珪素膜製造装置によ
れば、長尺筒状の被処理物であってもその内面全面に均
一、均質で緻密な炭化珪素膜を形成することができ、被
処理物として炭化珪素管を用いることにより、被膜の破
損、剥離といった不都合を生じたり、熱処理中に不純物
の通過や拡散により内部の半導体を汚染するようなこと
のない半導体拡散炉用の炭化珪素質反応管を得ることが
できるものである。As explained above, according to the silicon carbide film manufacturing apparatus of the present invention, a uniform, homogeneous, and dense silicon carbide film can be formed on the entire inner surface of a long cylindrical workpiece. Silicon carbide for semiconductor diffusion furnaces that uses silicon carbide tubes as objects to be treated, which does not cause inconveniences such as damage or peeling of the coating, or contaminate the internal semiconductors due to the passage or diffusion of impurities during heat treatment. It is possible to obtain a quality reaction tube.
以下、実験例を示し、本発明の効果を具体的に説明する
。Hereinafter, the effects of the present invention will be specifically explained using experimental examples.
上記実施例において示した炭化珪素膜製造装置１を用い
、その黒鉛電極４内に内径１５０ｍ＋＋φ。Using the silicon carbide film manufacturing apparatus 1 shown in the above embodiment, the graphite electrode 4 has an inner diameter of 150 m++φ.
外径１６０ｎｍφ、長さ２０００１１１１１の炭化珪素
管２１を装填し、蓋体８で反応管３上端開口部を気密に
閉塞した後、排気管７から真空ポンプにより反応管３内
の空気を排気して管内を減圧した。After loading a silicon carbide tube 21 with an outer diameter of 160 nmφ and a length of 200011111 and sealing the upper end opening of the reaction tube 3 with the lid 8, the air inside the reaction tube 3 was evacuated from the exhaust tube 7 with a vacuum pump. The pressure inside the tube was reduced.
次に、水冷誘導コイル６に通電して電極４内を誘湛加熱
すると共に、ガス供給管９から炭化珪素管２１内に水素
ガスを６０００ ｍＱ／ｍｉｎの条件で流入させながら
反応管３内を５０Ｔｏｒｒに調整した。Next, the water-cooled induction coil 6 is energized to heat the inside of the electrode 4 by induction, and the inside of the reaction tube 3 is heated while hydrogen gas is flowing into the silicon carbide tube 21 from the gas supply tube 9 at a rate of 6000 mQ/min. It was adjusted to 50 Torr.
その後、炭化珪素管２１内を１３００°Ｃとし、ガス浜
給管９の先端１９より水素ガス及びメチルトリクロロシ
ランをそれぞれ６０００ ｍＱ／＋ｎｊｎ及び５ＱｍＱ
／ｍｉｎの流速で炭化珪素管２１内に流入させながら、
減速モーター１５を作動させてガス供給管９を炭化珪素
管２１の軸方向に沿って下方から上方へ２００ ｎ＋ｍ
／ｈｒの速度で移動させ、炭化珪素管２１の内面に炭化
珪素を気相蒸着させて、内面が緻密質の炭化珪素膜で被
覆された炭化珪素質反応管を得た。Thereafter, the inside of the silicon carbide tube 21 was heated to 1300°C, and hydrogen gas and methyltrichlorosilane were supplied from the tip 19 of the gas supply pipe 9 at 6000 mQ/+njn and 5QmQ, respectively.
While flowing into silicon carbide tube 21 at a flow rate of /min,
The deceleration motor 15 is activated to move the gas supply pipe 9 along the axial direction of the silicon carbide pipe 21 from below to above by 200 n+m.
/hr to vapor-deposit silicon carbide on the inner surface of silicon carbide tube 21 to obtain a silicon carbide reaction tube whose inner surface was coated with a dense silicon carbide film.
上記炭化珪素質反応管において、その被膜の両端部及び
中央部での膜厚は平均５００μｓでそのバラツキは最大
厚と最小厚との差が１５戸であった。In the silicon carbide reaction tube, the average thickness of the coating at both ends and the center was 500 μs, with a variation of 15 times between the maximum and minimum thicknesses.
また、被膜の断面を観察したところ層状態は認められず
、均一、均質な炭化珪素膜であることが確認された。Further, when the cross section of the film was observed, no layer state was observed, and it was confirmed that the film was a uniform and homogeneous silicon carbide film.
一方、比較のため減速モータ１５を作動させずにガス供
給管９を最下部に固定して、即ち従来の装置と同様の原
料ガス供給機構とし、その他の条件は上記と同様にして
被膜形成を行なったところ、得られた炭化珪素膜はガス
下流側はど薄くなり。On the other hand, for comparison, the gas supply pipe 9 was fixed at the bottom without operating the deceleration motor 15, that is, the raw material gas supply mechanism was the same as in the conventional device, and the other conditions were the same as above to form the film. As a result, the resulting silicon carbide film became thinner on the downstream side of the gas.
ガス下流側の端部ではほとんど被覆されなかった。There was almost no coating at the end on the downstream side of the gas.
図面は本発明の一実施例を示す断面図である。
１・・・炭化珪素膜製造装置 ３・・・反応管６・・
・水冷誘導コイル ９・・・ガス供給管２１・・
被処理物The drawing is a sectional view showing an embodiment of the present invention. 1...Silicon carbide film manufacturing equipment 3...Reaction tube 6...
・Water-cooled induction coil 9...Gas supply pipe 21...
Processed object
Claims (1)
相蒸着法によって形成する装置であって、上記筒状の被
処理物を収容する反応管と、この反応管内を加熱する加
熱機構と、先端部が上記反応管内をその軸方向に沿って
移動し得るように配設され、その先端部から上記反応管
内に収容された筒状の被処理物内に炭素源と珪素源とを
含む原料ガスを供給するガス供給管と、このガス供給管
を移動させるガス供給管移動機構とを具備してなること
を特徴とする炭化珪素膜製造装置。1. An apparatus for forming a high-purity silicon carbide coating on the inner surface of a cylindrical workpiece by chemical vapor deposition, the apparatus comprising: a reaction tube for accommodating the cylindrical workpiece; and a heating mechanism for heating the inside of the reaction tube. , disposed such that its tip can move within the reaction tube along its axial direction, and containing a carbon source and a silicon source from the tip into a cylindrical workpiece housed in the reaction tube. A silicon carbide film manufacturing apparatus comprising: a gas supply pipe for supplying raw material gas; and a gas supply pipe moving mechanism for moving the gas supply pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20742689A JPH0372075A (en) | 1989-08-10 | 1989-08-10 | Apparatus for producing silicon carbide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20742689A JPH0372075A (en) | 1989-08-10 | 1989-08-10 | Apparatus for producing silicon carbide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0372075A true JPH0372075A (en) | 1991-03-27 |
Family
ID=16539560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20742689A Pending JPH0372075A (en) | 1989-08-10 | 1989-08-10 | Apparatus for producing silicon carbide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0372075A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221355A (en) * | 1991-10-31 | 1993-06-22 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide film forming apparatus |
| US8771416B2 (en) | 2009-07-02 | 2014-07-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus with an insulator disposed in the reaction chamber |
-
1989
- 1989-08-10 JP JP20742689A patent/JPH0372075A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221355A (en) * | 1991-10-31 | 1993-06-22 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide film forming apparatus |
| US8771416B2 (en) | 2009-07-02 | 2014-07-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus with an insulator disposed in the reaction chamber |
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