TWI609988B - Process equipment and chemical vapor deposition process - Google Patents
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Abstract
一種製程設備包含製程腔體、晶圓承托裝置、至少一排氣管路以及至少一排氣通道。晶圓承托裝置位於製程腔體中，晶圓承托裝置具有晶圓承托位置，晶圓承托位置將製程腔體區分為位於晶圓承托位置上方的上腔體，以及位於晶圓承托位置下方之下腔體。排氣通道連通下腔體與排氣管路。 A process apparatus includes a process chamber, a wafer support device, at least one exhaust line, and at least one exhaust passage. The wafer support device is located in the process cavity, and the wafer support device has a wafer support position, and the wafer support position divides the process cavity into an upper cavity above the wafer support position, and is located on the wafer Support the cavity below the position. The exhaust passage communicates with the lower chamber and the exhaust line.
Description
本發明實施例是有關於一種製程設備。 Embodiments of the present invention are directed to a process apparatus.
化學氣相沉積(Chemical Vapor Deposition；CVD)是一種應用在半導體產業中生產薄膜的技術。化學氣相沉積包括常壓化學氣相沉積、電漿增強化學氣相沉積、雷射輔助化學沉積、金屬有機化學氣相沉積等。在化學氣相沉積的過程中，晶圓將暴露於一種或多種製程氣體中，而這些製程氣體可能會發生不同的變化，例如分解、沉積等反應並附著於晶圓上，繼而在晶圓上形成所需的薄膜。 Chemical Vapor Deposition (CVD) is a technology used to produce thin films in the semiconductor industry. Chemical vapor deposition includes atmospheric pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, laser assisted chemical deposition, metal organic chemical vapor deposition, and the like. During chemical vapor deposition, the wafer will be exposed to one or more process gases, which may undergo different changes, such as decomposition, deposition, etc., attached to the wafer, and then on the wafer. The desired film is formed.
本發明實施例之一技術態樣在於提供一種製程設備，其能使製程氣體保持以層流(Laminar Flow)的方式穩定地流動，而製程氣體沉積於晶圓的表面上的過程，也能夠得到更佳的控制。 A technical aspect of an embodiment of the present invention is to provide a process apparatus capable of stably maintaining a process gas in a laminar flow manner, and a process of depositing a process gas on a surface of the wafer. Better control.
根據本發明的多個實施例，一種製程設備包含 製程腔體、晶圓承托裝置、至少一排氣管路以及至少一排氣通道。晶圓承托裝置位於製程腔體中，晶圓承托裝置具有晶圓承托位置，晶圓承托位置將製程腔體區分為位於晶圓承托位置上方的上腔體，以及位於晶圓承托位置下方之下腔體。排氣通道連通下腔體與排氣管路。 According to various embodiments of the invention, a process device includes a process chamber, a wafer support device, at least one exhaust line, and at least one exhaust passage. The wafer support device is located in the process cavity, and the wafer support device has a wafer support position, and the wafer support position divides the process cavity into an upper cavity above the wafer support position, and is located on the wafer Support the cavity below the position. The exhaust passage communicates with the lower chamber and the exhaust line.
根據本發明的多個實施例，一種製程設備包含上腔壁、下腔壁、至少一上襯墊、至少一下襯墊以及排氣管路。上襯墊介於上腔壁與下腔壁之間。下襯墊介於上襯墊與下腔壁之間，下襯墊具有至少一吹驅氣體排氣通道於其中。排氣管路連通吹驅氣體排氣通道。 In accordance with various embodiments of the present invention, a process apparatus includes an upper chamber wall, a lower chamber wall, at least one upper gasket, at least a lower gasket, and an exhaust conduit. The upper pad is between the upper chamber wall and the lower chamber wall. The lower liner is interposed between the upper liner and the lower chamber wall, and the lower liner has at least one purge gas exhaust passage therein. The exhaust line communicates with the purge gas exhaust passage.
本發明實施例之一技術態樣在於提供一種化學氣相沉積製程，其能使製程氣體保持以層流(Laminar Flow)的方式穩定地流動，而製程氣體沉積於晶圓的表面上的過程，也能夠得到更佳的控制。 A technical aspect of an embodiment of the present invention is to provide a chemical vapor deposition process that enables a process gas to be stably flowed in a laminar flow manner, and a process gas is deposited on a surface of the wafer. Better control is also possible.
根據本發明的多個實施例，一種化學氣相沉積製程包含導引至少一製程氣體進入至少一晶圓上方的上腔體、導引至少一吹驅氣體進入晶圓下方的下腔體以及導引至少部份位於下腔體中的吹驅氣體進入排氣管路。 According to various embodiments of the present invention, a chemical vapor deposition process includes guiding at least one process gas into an upper cavity above at least one wafer, guiding at least one purge gas into a lower cavity below the wafer, and guiding At least a portion of the purge gas located in the lower chamber enters the exhaust line.
綜上所述，本發明上述的多個實施例所揭露的技術方案至少具有以下優點： In summary, the technical solutions disclosed in the foregoing various embodiments of the present invention have at least the following advantages:
(1)由於排氣通道連通製程腔體的下腔體與排氣管路，因此，被注入至製程腔體的下腔體中的吹驅氣體，將可以通過排氣通道而流動至排氣管路，繼而離開製程設備。而且，在製程設備運作時，由於製程氣體被注入至製程 腔體的上腔體中，會使得上腔體中的壓力增加，因此，藉由維持排氣管路處於低壓的狀態，至少部份的吹驅氣體將會流動至壓力相對較低的排氣管路，而不會流動至壓力相對較高的上腔體。 (1) Since the exhaust passage communicates with the lower chamber of the process chamber and the exhaust line, the blow-in gas injected into the lower chamber of the process chamber can flow to the exhaust through the exhaust passage The tubing then leaves the process equipment. Moreover, when the process equipment is in operation, the process gas is injected into the process. In the upper cavity of the cavity, the pressure in the upper cavity is increased, and therefore, by maintaining the exhaust pipe in a low pressure state, at least part of the purge gas will flow to the relatively low pressure exhaust gas. The tubing does not flow to the upper chamber with a relatively high pressure.
(2)由於吹驅氣體流動至上腔體的機會降低，因此，吹驅氣體因流動至上腔體而於上腔體中產生紊流(Turbulent Flow)的機會也會降低。如此一來，製程氣體於上腔體中受到紊流影響的程度也將會降低，而能夠實質上保持以層流(Laminar Flow)的方式穩定地流動。如此一來，當製程氣體自上腔體沉積於晶圓的表面上時，由於紊流影響的程度降低，製程氣體沉積於晶圓表面上的均勻度將會提高，亦即，晶圓表面上所形成之薄膜厚度不一的程度將會降低。換句話說，排氣通道能夠使製程氣體於上腔體中實質保持以層流的方式穩定地流動，將有利於晶圓在製程設備中進行化學氣相沉積，而製程氣體沉積於晶圓表面上的薄膜，也能夠得到更佳的品質控制。 (2) Since the chance of the purge gas flowing to the upper chamber is lowered, the chance of the turbulent flow in the upper chamber due to the flow of the purge gas to the upper chamber is also reduced. As a result, the degree of turbulence of the process gas in the upper chamber will also be reduced, and the flow can be stably maintained in a laminar flow manner. In this way, when the process gas is deposited on the surface of the wafer from the upper cavity, the uniformity of the deposition of the process gas on the surface of the wafer will be improved due to the reduced degree of turbulence influence, that is, on the surface of the wafer. The degree of thickness of the formed film will be reduced. In other words, the exhaust passage enables the process gas to stably flow in a laminar manner in the upper chamber, which facilitates chemical vapor deposition of the wafer in the process equipment, and the process gas is deposited on the wafer surface. The film on the top can also achieve better quality control.
100‧‧‧製程設備 100‧‧‧Processing equipment
110‧‧‧製程腔體 110‧‧‧Processing cavity
110a‧‧‧上腔體 110a‧‧‧Upper cavity
110b‧‧‧下腔體 110b‧‧‧ lower cavity
111‧‧‧上腔壁 111‧‧‧ upper wall
112‧‧‧下腔壁 112‧‧‧ lower wall
113‧‧‧襯墊 113‧‧‧ cushion
113a‧‧‧上襯墊 113a‧‧‧Upper liner
113b‧‧‧下襯墊 113b‧‧‧ under liner
114‧‧‧製程氣體排氣通道 114‧‧‧Process gas exhaust passage
120‧‧‧晶圓承托裝置 120‧‧‧ wafer support device
121‧‧‧晶圓承托位置 121‧‧‧ wafer support location
122‧‧‧支架 122‧‧‧ bracket
123‧‧‧基座 123‧‧‧Base
130‧‧‧排氣管路 130‧‧‧Exhaust line
135‧‧‧抽氣裝置 135‧‧‧Exhaust device
140‧‧‧排氣通道 140‧‧‧Exhaust passage
150‧‧‧製程氣體源 150‧‧‧Process gas source
160‧‧‧吹驅氣體源 160‧‧‧Blowing gas source
170‧‧‧預熱單元 170‧‧‧Preheating unit
180‧‧‧製程氣體入口 180‧‧‧Process gas inlet
190‧‧‧吹驅氣體入口 190‧‧‧Blowing gas inlet
195‧‧‧高溫計 195‧‧‧ pyrometer
200‧‧‧晶圓 200‧‧‧ wafer
300‧‧‧化學氣相沉積製程 300‧‧‧Chemical vapor deposition process
310~330‧‧‧步驟 310~330‧‧‧Steps
CD‧‧‧周向 CD‧‧‧Weighing
G‧‧‧間隙 G‧‧‧ gap
G1‧‧‧製程氣體 G1‧‧‧ process gas
G2‧‧‧吹驅氣體 G2‧‧‧Blowing gas
第1圖繪示依照本發明多個實施例之製程設備的局部剖面圖。 1 is a partial cross-sectional view of a process apparatus in accordance with various embodiments of the present invention.
第2圖繪示第1圖之下襯墊的立體示意圖。 Figure 2 is a perspective view showing the spacer under the first figure.
第3圖繪示依照本發明多個實施例之化學氣相沉積製程的流程圖。 3 is a flow chart showing a chemical vapor deposition process in accordance with various embodiments of the present invention.
以下將以圖式揭露本發明之多個實施例，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施例中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and for the purpose of clarity However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.
請參照第1圖，其繪示依照本發明多個實施例之製程設備100的局部剖面圖。如第1圖所示，一種製程設備100包含製程腔體110、晶圓承托裝置120、至少一排氣管路130以及至少一排氣通道140。晶圓承托裝置120位於製程腔體110中。晶圓承托裝置120具有晶圓承托位置121。當晶圓承托裝置120承托晶圓200時，晶圓200將位於晶圓承托位置121。此晶圓承托位置121將製程腔體110區分為位於晶圓承托位置121上方的上腔體110a，以及位於晶圓承托位置121下方之下腔體110b。再者，排氣通道140連通下腔體110b與排氣管路130。 Referring to FIG. 1, a partial cross-sectional view of a process apparatus 100 in accordance with various embodiments of the present invention is shown. As shown in FIG. 1, a process apparatus 100 includes a process chamber 110, a wafer support device 120, at least one exhaust line 130, and at least one exhaust passage 140. Wafer support device 120 is located in process chamber 110. Wafer holder 120 has a wafer support location 121. When wafer support device 120 supports wafer 200, wafer 200 will be at wafer support location 121. The wafer support location 121 divides the process cavity 110 into an upper cavity 110a above the wafer support location 121 and a cavity 110b below the wafer support location 121. Furthermore, the exhaust passage 140 communicates with the lower chamber 110b and the exhaust line 130.
具體而言，晶圓承托裝置120包含支架122以及基座123。支架122配置以承托基座123，而基座123則配置以承托晶圓200。在一些實施例中，支架122係以複數個支撐點接觸並承托基座123接近邊緣的位置。如此一來，晶圓承托裝置120對晶圓200的承托將變得更為穩固。並且，藉由調校支架122每一個支撐點的位置，可以有效使晶圓200於製程腔體110中保持水平地設置，有利後續的製程進行。 Specifically, the wafer holder 120 includes a bracket 122 and a base 123. The bracket 122 is configured to support the base 123 while the base 123 is configured to support the wafer 200. In some embodiments, the bracket 122 is in contact with a plurality of support points and supports the position of the base 123 proximate the edge. As a result, the support of the wafer support device 120 to the wafer 200 will become more stable. Moreover, by adjusting the position of each support point of the bracket 122, the wafer 200 can be effectively horizontally disposed in the process chamber 110, which facilitates subsequent processes.
當製程設備100運作時，晶圓承托裝置120將承托晶圓200，使得晶圓200位於晶圓承托位置121。另一方面，製程氣體G1將會被注入至製程腔體110的上腔體110a中。在實務的應用中，製程設備100所進行的製程可為化學氣相沉積(Chemical Vapor Deposition；CVD)製程，例如磊晶成長(Epitaxial Growth)製程。磊晶成長製程亦即為一種用於半導體製程中，在原有的晶圓上長出新結晶層的技術。一般而言，磊晶成長設備是用來在例如矽晶圓之表面上形成單晶層(又稱磊晶層)的設備。在逐片式的磊晶成長設備中，晶圓可水平放置，並一面導入製程氣體，一面將晶圓加熱至既定溫度，使磊晶成長。 When process device 100 is in operation, wafer support device 120 will support wafer 200 such that wafer 200 is at wafer support location 121. On the other hand, the process gas G1 will be injected into the upper chamber 110a of the process chamber 110. In practical applications, the process performed by the process equipment 100 may be a Chemical Vapor Deposition (CVD) process, such as an Epitaxial Growth process. The epitaxial growth process is also a technique used in semiconductor processes to grow new crystalline layers on existing wafers. In general, an epitaxial growth apparatus is an apparatus for forming a single crystal layer (also referred to as an epitaxial layer) on a surface of, for example, a germanium wafer. In the piece-by-piece epitaxial growth apparatus, the wafer can be placed horizontally, and the process gas is introduced while heating the wafer to a predetermined temperature to cause epitaxial growth.
在一些實施例中，製程氣體G1可為例如甲矽烷(SiH4)、氯化氫(HCl)或上述之任意組合，但本發明並不以此為限。在磊晶成長進行的過程中，晶圓200將被晶圓承托裝置120所承托，而位於晶圓承托位置121。另一方面，製程氣體G1則自製程腔體110的上腔體110a沉積於晶圓200的表面上，並於晶圓200的表面上長出新結晶以形成結晶層。 In some embodiments, the process gas G1 may be, for example, metformin (SiH 4 ), hydrogen chloride (HCl), or any combination thereof, but the invention is not limited thereto. During the epitaxial growth process, the wafer 200 will be supported by the wafer holder 120 and located at the wafer support location 121. On the other hand, the process gas G1 is deposited on the surface of the wafer 200 on the surface of the wafer 200, and a new crystal is grown on the surface of the wafer 200 to form a crystalline layer.
另一方面，當製程設備100運作時，吹驅氣體G2將會被注入至製程腔體110的下腔體110b中，以防止製程氣體G1從製程腔體110的上腔體110a流動至下腔體110b，並沉積於下腔體110b的內表面上。具體而言，吹驅氣體G2被注入至製程腔體110的下腔體110b中後，下腔體110b中的壓力將會增加，從而降低製程氣體G1從上腔體 110a流動至下腔體110b的機會。如此一來，製程氣體G1沉積於下腔體110b的機會也會有效降低。換句話說，藉由將吹驅氣體G2注入至製程腔體110的下腔體110b中，製程氣體G1污染下腔體110b的機會將會降低。 On the other hand, when the process apparatus 100 is in operation, the purge gas G2 will be injected into the lower chamber 110b of the process chamber 110 to prevent the process gas G1 from flowing from the upper chamber 110a of the process chamber 110 to the lower chamber. The body 110b is deposited on the inner surface of the lower cavity 110b. Specifically, after the purge gas G2 is injected into the lower chamber 110b of the process chamber 110, the pressure in the lower chamber 110b is increased, thereby reducing the process gas G1 from the upper chamber. The opportunity for 110a to flow to the lower chamber 110b. As a result, the chance that the process gas G1 is deposited on the lower chamber 110b is also effectively reduced. In other words, by injecting the purge gas G2 into the lower chamber 110b of the process chamber 110, the chance of the process gas G1 contaminating the lower chamber 110b will be lowered.
再者，為了避免吹驅氣體G2有機會與製程氣體G1產生化學反應，甚至導致對製程設備100的運作帶來影響，在一些實施例中，吹驅氣體G2可包含惰性氣體。在此，惰性氣體應廣義解釋為不會與製程氣體G1產生影響製程之化學反應的氣體。舉例來說，在一些實施例中，惰性氣體可為鈍氣，其係指元素周期表上根據國際純化學和應用化學聯合會(International Union of Pure and Applied Chemistry；IUPAC)所規定的18族元素。舉例而言，在一些實施例中，吹驅氣體G2可為氦、氖、氬、氪、氙或上述之任意組合，但本發明並不以此為限。 Furthermore, in order to avoid the opportunity for the purge gas G2 to chemically react with the process gas G1, or even to affect the operation of the process apparatus 100, in some embodiments, the purge gas G2 may contain an inert gas. Here, the inert gas should be interpreted broadly as a gas which does not react with the process gas G1 to affect the chemical reaction of the process. For example, in some embodiments, the inert gas may be an blunt gas, which refers to a Group 18 element of the Periodic Table of the Elements according to the International Union of Pure and Applied Chemistry (IUPAC). . For example, in some embodiments, the purge gas G2 may be helium, neon, argon, neon, xenon, or any combination thereof, but the invention is not limited thereto.
如上所述，由於排氣通道140連通製程腔體110的下腔體110b與排氣管路130，因此，被注入至下腔體110b中的吹驅氣體G2，將可以通過排氣通道140而流動至排氣管路130，繼而離開製程設備100。而且，在製程設備100運作時，由於製程氣體G1被注入至製程腔體110的上腔體110a中，使得上腔體110a中的壓力增加，因此，藉由維持排氣管路130處於低壓的狀態，至少部份的吹驅氣體G2將會流動至壓力相對較低的排氣管路130，而不會流動至壓力相對較高的上腔體110a。 As described above, since the exhaust passage 140 communicates with the lower chamber 110b of the process chamber 110 and the exhaust line 130, the purge gas G2 injected into the lower chamber 110b may pass through the exhaust passage 140. It flows to the exhaust line 130 and then exits the process equipment 100. Moreover, when the process apparatus 100 is in operation, since the process gas G1 is injected into the upper chamber 110a of the process chamber 110, the pressure in the upper chamber 110a is increased, thereby maintaining the exhaust line 130 at a low pressure. In this state, at least a portion of the purge gas G2 will flow to the relatively low pressure exhaust line 130 without flowing to the relatively high pressure upper chamber 110a.
為了維持排氣管路130處於低壓的狀態，舉例 而言，如第1圖所示，排氣管路130更可連接抽氣裝置135。抽氣裝置135能夠藉由抽氣的方式，把氣流帶走，以使排氣管路130維持於低壓的狀態。而且，除了能夠維持排氣管路130處於低壓的狀態之外，在抽氣裝置135的作用下，吹驅氣體G2通過排氣管路130離開製程設備100的速度也會加快。 In order to maintain the exhaust line 130 in a low pressure state, for example In other words, as shown in FIG. 1, the exhaust line 130 can be connected to the air extracting device 135. The air extracting device 135 can take the airflow away by means of air suction to maintain the exhaust line 130 in a low pressure state. Moreover, in addition to being able to maintain the exhaust line 130 in a low pressure state, the speed at which the purge gas G2 exits the process equipment 100 through the exhaust line 130 is also accelerated by the suction device 135.
另外，在一些實施例中，排氣管路130亦連通製程腔體110的上腔體110a。當製程氣體G1被注入至製程腔體110的上腔體110a中後，至少部分的製程氣體G1會發生化學反應而沉積於晶圓200的表面上，而未被使用的製程氣體G1以及製程氣體G1在沉積過程中所產生的副產物，則會通過排氣管路130而離開製程設備100。相似地，由於吹驅氣體G2被注入至製程腔體110的下腔體110b中，使得下腔體110b中的壓力增加，因此，藉由維持排氣管路130處於低壓的狀態，大部分的製程氣體G1將會流動至壓力相對較低的排氣管路130，而不會流動至壓力相對較高的下腔體110b。而且，如上所述，在抽氣裝置135的作用下，製程氣體G1通過排氣管路130離開製程設備100的速度也會加快。 Additionally, in some embodiments, the exhaust line 130 also communicates with the upper chamber 110a of the process chamber 110. When the process gas G1 is injected into the upper cavity 110a of the process chamber 110, at least part of the process gas G1 is chemically reacted and deposited on the surface of the wafer 200, and the unused process gas G1 and process gas are used. The by-products produced by G1 during the deposition process exit the process equipment 100 through the exhaust line 130. Similarly, since the purge gas G2 is injected into the lower chamber 110b of the process chamber 110, the pressure in the lower chamber 110b is increased, and therefore, by maintaining the exhaust line 130 in a low pressure state, most of the The process gas G1 will flow to the relatively low pressure exhaust line 130 without flowing to the relatively high pressure lower chamber 110b. Moreover, as described above, the speed at which the process gas G1 exits the process equipment 100 through the exhaust line 130 is also accelerated by the suction device 135.
更具體而言，如上所述，由於吹驅氣體G2流動至上腔體110a的機會降低，因此，吹驅氣體G2因流動至上腔體110a而於上腔體110a中產生紊流(Turbulent Flow)的機會也會降低。如此一來，製程氣體G1於上腔體110a中受到紊流影響的程度也將會降低，而能夠實質上保持以層流(Laminar Flow)的方式穩定地流動。如此一來，當製程 氣體G1自上腔體110a沉積於晶圓200的表面上時，由於紊流影響的程度降低，製程氣體G1沉積於晶圓200表面上的均勻度將會提高，亦即，晶圓200表面上所形成之薄膜厚度不一的程度將會降低。換句話說，排氣通道140能夠使製程氣體G1於上腔體110a中實質保持以層流的方式穩定地流動，將有利於晶圓200在製程設備100中進行化學氣相沉積，而製程氣體G1沉積於晶圓200表面上的薄膜，也能夠得到更佳的品質控制。 More specifically, as described above, since the chance of the purge gas G2 flowing to the upper chamber 110a is lowered, the purge gas G2 is turbulent flow in the upper chamber 110a due to the flow to the upper chamber 110a. Opportunities will also decrease. As a result, the degree of the turbulent flow of the process gas G1 in the upper chamber 110a is also reduced, and the flow can be stably maintained in a laminar flow manner. As a result, when the process When the gas G1 is deposited on the surface of the wafer 200 from the upper cavity 110a, the uniformity of the deposition of the process gas G1 on the surface of the wafer 200 will be improved due to the reduced degree of turbulence influence, that is, on the surface of the wafer 200. The degree of thickness of the formed film will be reduced. In other words, the exhaust passage 140 enables the process gas G1 to stably flow in a manner of laminar flow in the upper chamber 110a, which facilitates chemical vapor deposition of the wafer 200 in the process equipment 100, and process gas The film deposited on the surface of the wafer 200 by G1 can also achieve better quality control.
另外，從結構上而言，如第1圖所示，製程腔體110包含至少一上腔壁111、至少一下腔壁112以及至少一襯墊113。上腔壁111位於晶圓承托位置121上方，下腔壁112則位於晶圓承托位置121下方。也就是說，被晶圓承托裝置120承托於晶圓承托位置121的晶圓200，係位於上腔壁111與下腔壁112之間。上腔體110a位於上腔壁111與晶圓承托位置121之間，而下腔體110b則位於下腔壁112與晶圓承托位置121之間。襯墊113介於上腔壁111與下腔壁112之間，且排氣通道140位於襯墊113中。 In addition, structurally, as shown in FIG. 1, the process chamber 110 includes at least one upper chamber wall 111, at least a lower chamber wall 112, and at least one liner 113. The upper chamber wall 111 is above the wafer support location 121 and the lower chamber wall 112 is located below the wafer support location 121. That is, the wafer 200 supported by the wafer holder 120 at the wafer holding position 121 is located between the upper chamber wall 111 and the lower chamber wall 112. The upper cavity 110a is located between the upper cavity wall 111 and the wafer receiving position 121, and the lower cavity 110b is located between the lower cavity wall 112 and the wafer receiving position 121. The gasket 113 is interposed between the upper chamber wall 111 and the lower chamber wall 112, and the exhaust passage 140 is located in the gasket 113.
換句話說，當製程設備100運作時，被注入製程腔體110的下腔體110b中的吹驅氣體G2，係通過位於襯墊113中的排氣通道140而流動至排氣管路130，繼而離開製程設備100。 In other words, when the process apparatus 100 is in operation, the purge gas G2 injected into the lower chamber 110b of the process chamber 110 flows to the exhaust line 130 through the exhaust passage 140 located in the gasket 113. It then leaves the process device 100.
更具體而言，襯墊113包含至少一上襯墊113a以及至少一下襯墊113b。也就是說，上襯墊113a與下襯墊113b共同形成襯墊113。上襯墊113a介於上腔壁111與下腔 壁112之間。下襯墊113b則介於上襯墊113a與下腔壁112之間，亦即上襯墊113a相對地介於下襯墊113b與上腔壁111之間。下襯墊113b具有至少一吹驅氣體排氣通道於其中，吹驅氣體排氣通道亦即上述的排氣通道140，也就是說，排氣通道140位於下襯墊113b中。再者，如上所述，排氣通道140連通排氣管路130，亦即排氣管路130連通吹驅氣體排氣通道。 More specifically, the liner 113 includes at least one upper liner 113a and at least a lower liner 113b. That is, the upper pad 113a and the lower pad 113b together form the pad 113. The upper liner 113a is interposed between the upper chamber wall 111 and the lower chamber Between the walls 112. The lower liner 113b is interposed between the upper liner 113a and the lower chamber wall 112, that is, the upper liner 113a is relatively interposed between the lower liner 113b and the upper chamber wall 111. The lower liner 113b has at least one purge gas exhaust passage therein, and the purge gas exhaust passage, that is, the above-described exhaust passage 140, that is, the exhaust passage 140 is located in the lower gasket 113b. Further, as described above, the exhaust passage 140 communicates with the exhaust line 130, that is, the exhaust line 130 communicates with the purge gas exhaust passage.
換句話說，當製程設備100運作時，被注入製程腔體110的下腔體110b中的吹驅氣體G2，係通過位於下襯墊113b中的排氣通道140而流動至排氣管路130，繼而離開製程設備100。 In other words, when the process apparatus 100 operates, the purge gas G2 injected into the lower chamber 110b of the process chamber 110 flows to the exhaust line 130 through the exhaust passage 140 located in the lower liner 113b. Then, the process device 100 is left.
進一步而言，襯墊113的上襯墊113a與下襯墊113b共同定義製程氣體排氣通道114於其中，排氣管路130更連通製程氣體排氣通道114。更具體而言，如第1圖所示，製程腔體110的上腔體110a連通製程氣體排氣通道114，因此，位於上腔體110a中的製程氣體G1，在製程設備100運作時，係通過上襯墊113a與下襯墊113b共同定義的製程氣體排氣通道114而流動至排氣管路130，繼而離開製程設備100。 Further, the upper liner 113a of the liner 113 and the lower liner 113b together define a process gas exhaust passage 114 therein, and the exhaust conduit 130 further communicates with the process gas exhaust passage 114. More specifically, as shown in FIG. 1, the upper chamber 110a of the process chamber 110 communicates with the process gas exhaust passage 114. Therefore, the process gas G1 located in the upper chamber 110a is operated when the process apparatus 100 is operated. The process gas exhaust passage 114 defined by the upper liner 113a and the lower liner 113b flows to the exhaust line 130, and then exits the process apparatus 100.
為了要向製程腔體110的上腔體110a供應製程氣體G1，在一些實施例中，製程設備100更包含製程氣體源150。如第1圖所示，製程設備100包含製程氣體入口180，製程氣體源150通過製程氣體入口180連通製程腔體110的上腔體110a，因此，製程氣體G1能夠被注入至上腔體110a 中。更具體而言，製程氣體源150通過製程氣體入口180連通上腔體110a的位置，係遠離製程氣體排氣通道114，故此，當製程氣體源150通過製程氣體入口180把製程氣體G1注入至上腔體110a中後，製程氣體G1將朝製程氣體排氣通道114的方向以實質層流的方式穩定地流動於晶圓200與上腔壁111之間，並在至少部分的製程氣體G1發生化學反應而沉積於晶圓200的表面上後，未被使用的製程氣體G1以及製程氣體G1在沉積過程中所產生的副產物，會通過上襯墊113a與下襯墊113b共同定義的製程氣體排氣通道114而流動至排氣管路130，繼而離開製程設備100。在一些實施例中，更具體而言，製程氣體入口180係通過襯墊113的上襯墊113a與下襯墊113b之間而與製程腔體110的上腔體110a連通。換句話說，上襯墊113a與下襯墊113b之間於製程氣體入口180與上腔體110a之間具有通道，使得製程氣體入口180與上腔體110a能夠連通。 In order to supply the process gas G1 to the upper chamber 110a of the process chamber 110, in some embodiments, the process apparatus 100 further includes a process gas source 150. As shown in FIG. 1, the process apparatus 100 includes a process gas inlet 180 through which the process gas source 150 communicates with the upper chamber 110a of the process chamber 110. Therefore, the process gas G1 can be injected into the upper chamber 110a. in. More specifically, the process gas source 150 is in a position to communicate with the upper chamber 110a through the process gas inlet 180, away from the process gas exhaust passage 114, so that the process gas source 150 injects the process gas G1 into the upper chamber through the process gas inlet 180. After the body 110a, the process gas G1 stably flows in the direction of the process gas exhaust passage 114 in a substantially laminar flow between the wafer 200 and the upper chamber wall 111, and chemical reaction occurs in at least part of the process gas G1. After being deposited on the surface of the wafer 200, the unused process gas G1 and the by-products generated by the process gas G1 during the deposition process are exhausted by the process gas defined by the upper liner 113a and the lower liner 113b. The passage 114 flows to the exhaust line 130 and then exits the process equipment 100. In some embodiments, more specifically, the process gas inlet 180 is in communication with the upper chamber 110a of the process chamber 110 through the upper liner 113a and the lower liner 113b of the liner 113. In other words, there is a passage between the upper gasket 113a and the lower gasket 113b between the process gas inlet 180 and the upper chamber 110a, so that the process gas inlet 180 can communicate with the upper chamber 110a.
另一方面，為了要向製程腔體110的下腔體110b供應吹驅氣體G2，在一些實施例中，製程設備100更包含吹驅氣體源160。如第1圖所示，製程設備100包含吹驅氣體入口190，吹驅氣體源160通過吹驅氣體入口190連通製程腔體110的下腔體110b，因此，吹驅氣體G2能夠被注入至下腔體110b中。更具體而言，吹驅氣體源160通過吹驅氣體入口190連通下腔體110b的位置，係遠離上腔體110a，且吹驅氣體入口190至少部分朝向位於晶圓承托位置121的晶圓200。 On the other hand, in order to supply the purge gas G2 to the lower cavity 110b of the process chamber 110, in some embodiments, the process apparatus 100 further includes a purge gas source 160. As shown in FIG. 1, the process apparatus 100 includes a purge gas inlet 190 through which the purge gas source 160 communicates with the lower chamber 110b of the process chamber 110, so that the purge gas G2 can be injected into the lower chamber. In the cavity 110b. More specifically, the purge gas source 160 is in communication with the lower cavity 110b through the purge gas inlet 190, away from the upper cavity 110a, and the purge gas inlet 190 is at least partially oriented toward the wafer at the wafer support location 121. 200.
再者，在一些實施例中，製程設備100更包含預熱單元170。預熱單元170可呈環狀，且至少部分圍繞晶圓承托裝置120設置，更具體而言，預熱單元170與晶圓承托裝置120的基座123之間具有間隙G。如第1圖所示，圍繞基座123的間隙G連通製程腔體110的上腔體110a與下腔體110b，而預熱單元170更連接襯墊113的下襯墊113b。預熱單元170配置以熱輻射的方式提供熱能，藉此提昇製程腔體110的上腔體110a以及位於晶圓承托位置121的晶圓200的溫度。 Moreover, in some embodiments, the process device 100 further includes a preheating unit 170. The preheating unit 170 can be annular and at least partially disposed around the wafer holder 120, and more specifically, the preheating unit 170 has a gap G with the base 123 of the wafer holder 120. As shown in FIG. 1, the gap G surrounding the susceptor 123 communicates with the upper cavity 110a and the lower cavity 110b of the process chamber 110, and the preheating unit 170 further connects the lower liner 113b of the gasket 113. The preheating unit 170 is configured to provide thermal energy in a thermally radiated manner, thereby increasing the temperature of the upper chamber 110a of the process chamber 110 and the wafer 200 at the wafer holding position 121.
如上所述，由於製程腔體110的上腔體110a的壓力相對較高，而排氣管路130的壓力相對較低，因此，大部分的吹驅氣體G2實質上會避免從製程腔體110的下腔體110b通過圍繞晶圓200的間隙G而流動至製程腔體110的上腔體110a。由於大部分的吹驅氣體G2實質上會避免通過間隙G而流動至上腔體110a，因此吹驅氣體G2將不會在上腔體110a靠近間隙G的位置產生有意義的紊流。如此一來，製程氣體G1於上腔體110a中接近間隙G的流動形態，將實質上不會受到吹驅氣體G2的影響，而能實質保持以層流的方式穩定地流動。如此一來，當製程氣體G1自上腔體110a沉積於晶圓200的表面上時，由於上腔體110a靠近間隙G的位置没有產生有意義的紊流，因此製程氣體G1將實質上不會於靠近間隙G的位置受到紊流的帶動而不均勻地沉積於晶圓200的表面上，故此，也實質上不會導致於晶圓200的表面上尤其是靠近間隙G的位置形成厚度不一的薄膜，造成生 產品質的降低。換句話說，排氣通道140能夠使製程氣體G1於上腔體110a中實質保持以層流的方式穩定地流動，將有利於晶圓200在製程設備100中進行化學氣相沉積製程，例如磊晶成長製程，而製程氣體G1沉積於晶圓200的表面上的結晶層，也能夠得到更佳的品質控制。 As described above, since the pressure of the upper chamber 110a of the process chamber 110 is relatively high and the pressure of the exhaust line 130 is relatively low, most of the purge gas G2 substantially avoids the process chamber 110. The lower cavity 110b flows to the upper cavity 110a of the process chamber 110 through the gap G surrounding the wafer 200. Since most of the purge gas G2 substantially prevents flow to the upper chamber 110a through the gap G, the purge gas G2 will not cause significant turbulence at the position where the upper chamber 110a approaches the gap G. As a result, the flow pattern of the process gas G1 in the upper chamber 110a close to the gap G is substantially not affected by the purge gas G2, and can be stably maintained in a laminar flow. As a result, when the process gas G1 is deposited on the surface of the wafer 200 from the upper cavity 110a, since the position of the upper cavity 110a close to the gap G does not cause significant turbulence, the process gas G1 will not substantially The position close to the gap G is unevenly deposited on the surface of the wafer 200 by the turbulent flow, and thus does not substantially cause a thickness difference on the surface of the wafer 200, particularly near the gap G. Film, causing health The quality of the product is reduced. In other words, the exhaust passage 140 enables the process gas G1 to stably flow in a manner of laminar flow in the upper chamber 110a, which facilitates the wafer 200 to perform a chemical vapor deposition process in the process apparatus 100, such as Lei. The crystal growth process, and the process gas G1 deposited on the crystal layer on the surface of the wafer 200, can also achieve better quality control.
當製程設備100運作時，預熱單元170會以熱輻射的方式提供熱能，藉此提昇製程腔體110的上腔體110a以及位於晶圓承托位置121的晶圓200的溫度，而上腔體110a及晶圓200在受熱後上升的溫度，有利於製程氣體G1在晶圓200的表面上形成薄膜。在實務的應用中，預熱單元170可將晶圓200的溫度加熱至約1000~1200℃左右，但本發明並不以此為限。 When the process device 100 is in operation, the preheating unit 170 provides thermal energy in a thermal radiation manner, thereby raising the temperature of the upper cavity 110a of the process cavity 110 and the wafer 200 at the wafer holding position 121, and the upper cavity The temperature at which the body 110a and the wafer 200 rise after being heated causes the process gas G1 to form a thin film on the surface of the wafer 200. In a practical application, the preheating unit 170 can heat the temperature of the wafer 200 to about 1000 to 1200 ° C, but the invention is not limited thereto.
為了要測量晶圓200表面的溫度，在一些實施例中，製程設備100更可設有高溫計195。舉例而言，如第1圖所示，高溫計195可位於上腔體110a中接近上腔壁111的位置。由於預熱單元170可呈環狀且至少部分圍繞晶圓承托裝置120設置，因此，預熱單元170將不會位於晶圓200與高溫計195之間，阻擋高溫計195接收來自晶圓200的熱輻射能量。 In order to measure the temperature of the surface of the wafer 200, in some embodiments, the process apparatus 100 may be further provided with a pyrometer 195. For example, as shown in FIG. 1, the pyrometer 195 can be located in the upper chamber 110a near the upper chamber wall 111. Since the preheating unit 170 can be annular and at least partially disposed around the wafer holder 120, the preheating unit 170 will not be located between the wafer 200 and the pyrometer 195, blocking the pyrometer 195 from receiving from the wafer 200. Thermal radiant energy.
如上所述，當製程設備100運作時，預熱單元170會以熱輻射的方式提供熱能，使得製程腔體110的上腔體110a以及位於晶圓承托位置121的晶圓200的溫度上升。為使製程能夠在穩定的環境條件下進行，並減低襯墊113的下襯墊113b於高溫下向上腔體110a釋放出不必要物 質的機會，下襯墊113b的材質可選用具有耐高溫特性的材料，例如二氧化矽。二氧化矽為酸性氧化物，其具有硬度大、耐高溫、耐震及電性絕緣等性能，且二氧化矽的化學性質不活潑，不容易與水和大部分酸性溶液發生反應，因此，包含二氧化矽的下襯墊113b具有穩定的特性，且下襯墊113b在高溫下向製程腔體110釋放出不必要物質的機會也會降低。另外，在一些實施例中，下襯墊113b亦可包含石英，石英亦為矽的氧化物之一。 As described above, when the process apparatus 100 is in operation, the preheating unit 170 provides thermal energy in a manner of heat radiation such that the temperature of the upper chamber 110a of the process chamber 110 and the wafer 200 at the wafer holding position 121 rises. In order to enable the process to be carried out under stable environmental conditions, and the lower liner 113b of the liner 113 is lowered, an unnecessary substance is released to the upper chamber 110a at a high temperature. For the quality opportunity, the material of the lower liner 113b may be selected from materials having high temperature resistance, such as cerium oxide. Cerium oxide is an acidic oxide, which has high hardness, high temperature resistance, shock resistance and electrical insulation properties, and the chemical properties of cerium oxide are not active, and it is not easy to react with water and most acidic solutions. The lower liner 113b of the yttria has stable characteristics, and the chance that the lower liner 113b releases unnecessary substances to the process chamber 110 at a high temperature is also lowered. In addition, in some embodiments, the lower liner 113b may also comprise quartz, and the quartz is also one of the oxides of tantalum.
另一方面，為了避免製程氣體G1因意外地進入下腔體110b，而與襯墊113的下襯墊113b產生化學反應，下襯墊113b的材質可選用具有耐酸特性的材料，例如：二氧化矽、石英或上述之任意組合。如此一來，即使製程氣體G1因意外地進入下腔體110b，甚至與下襯墊113b產生接觸，製程氣體G1也不會與下襯墊113b產生有意義的化學作用，並對下襯墊113b造成有意義的破壞。如此一來，下襯墊113b的使用壽命得以有效延長。 On the other hand, in order to prevent the process gas G1 from chemically reacting with the lower liner 113b of the liner 113 due to accidental entry into the lower cavity 110b, the material of the lower liner 113b may be selected from materials having acid resistance, for example, dioxide. Tantalum, quartz or any combination of the above. As a result, even if the process gas G1 accidentally enters the lower cavity 110b, even in contact with the lower liner 113b, the process gas G1 does not have a significant chemical action with the lower liner 113b, and causes the lower liner 113b. Meaningful destruction. As a result, the service life of the lower liner 113b is effectively extended.
相似地，上襯墊113a的材質亦可選用具有耐高溫及/或耐酸特性的材料，例如：二氧化矽、石英或上述之任意組合。此外，為了減低晶圓承托裝置120於高溫下釋放出不必要物質的機會，晶圓承托裝置120的材質亦可包含石英，但本發明並不以此為限。 Similarly, the material of the upper liner 113a may also be selected from materials having high temperature and/or acid resistance, such as cerium oxide, quartz or any combination thereof. In addition, in order to reduce the chance of the wafer support device 120 releasing unnecessary substances at a high temperature, the material of the wafer support device 120 may also include quartz, but the invention is not limited thereto.
請參照第2圖，其繪示第1圖之下襯墊113b的立體示意圖。如第2圖所示，排氣通道140可呈長形，並沿下襯墊113b之周向CD延伸。在實務的應用中，排氣通道140 的大小為約40%~160%的排氣管路130的大小，例如約50%、約100%或約150%的排氣管路130的大小，但本發明並不以此為限。在一些實施例中，排氣通道140的數量可為複數個，且分別連通下腔體110b與排氣管路130。 Please refer to FIG. 2 , which is a perspective view of the pad 113 b in FIG. 1 . As shown in Fig. 2, the exhaust passage 140 may be elongated and extend along the circumferential CD of the lower liner 113b. In practical applications, the exhaust passage 140 The size of the exhaust line 130 is about 40% to 160%, for example, about 50%, about 100%, or about 150% of the size of the exhaust line 130, but the invention is not limited thereto. In some embodiments, the number of exhaust passages 140 may be plural and communicate with the lower chamber 110b and the exhaust line 130, respectively.
請參照第3圖，其繪示依照本發明多個實施例之化學氣相沉積(Chemical Vapor Deposition；CVD)製程300的流程圖。進一步而言，除了上述的製程設備100之外，本發明之另一態樣在於提供一種化學氣相沉積製程300，如第3圖所示，第3圖之化學氣相沉積製程300包含下列步驟(應了解到，在一些實施例中所提及的步驟，除特別敘明其順序者外，均可依實際需要調整其前後順序，甚至可同時或部分同時執行)：(1)導引至少一製程氣體G1進入至少一晶圓200上方的上腔體110a(步驟310)；(2)導引至少一吹驅氣體進G2進入晶圓200下方的下腔體110b(步驟320)；以及(3)導引至少部份位於下腔體110b中的吹驅氣體G2進入排氣管路130(步驟330)。 Referring to FIG. 3, a flow diagram of a chemical vapor deposition (CVD) process 300 in accordance with various embodiments of the present invention is shown. Further, in addition to the above-described process apparatus 100, another aspect of the present invention is to provide a chemical vapor deposition process 300. As shown in FIG. 3, the chemical vapor deposition process 300 of FIG. 3 includes the following steps. (It should be understood that the steps mentioned in some embodiments, except for the order in which they are specifically stated, may be adjusted according to actual needs, and may even be performed simultaneously or partially simultaneously): (1) guiding at least a process gas G1 enters the upper cavity 110a above the at least one wafer 200 (step 310); (2) directs at least one purge gas into the lower cavity 110b below the wafer 200 (step 320); 3) Guiding at least a portion of the purge gas G2 located in the lower chamber 110b into the exhaust line 130 (step 330).
藉由導引至少部份位於下腔體110b中的吹驅氣體G2進入排氣管路130，至少此部份的吹驅氣體G2將不會流動至上腔體110a，因此吹驅氣體G2因流動至上腔體110a而於上腔體110a中產生紊流(Turbulent Flow)的現象將可減輕。如此一來，製程氣體G1於上腔體110a中流動的形態，將實質上不會受到吹驅氣體G2的影響，而能實質 保持以層流(Laminar Flow)的方式穩定地流動。如此一來，當製程氣體G1自上腔體110a沉積於晶圓200的表面上時，由於上腔體110a中紊流所產生的影響降低，因此製程氣體G1沉積於晶圓200表面上的均勻度將得以提高。換句話說，第3圖所繪示的化學氣相沉積製程300，能夠使製程氣體G1於上腔體110a中實質上保持以層流的方式穩定地流動，有利於控制產品的均勻度。 By guiding at least a portion of the purge gas G2 located in the lower chamber 110b into the exhaust line 130, at least this portion of the purge gas G2 will not flow to the upper chamber 110a, so the purge gas G2 flows. The phenomenon of turbulent flow in the upper chamber 110a to the upper chamber 110a can be alleviated. In this way, the form of the process gas G1 flowing in the upper cavity 110a will not be substantially affected by the purge gas G2, but can be substantially Maintain a steady flow in the form of Laminar Flow. As a result, when the process gas G1 is deposited on the surface of the wafer 200 from the upper cavity 110a, the influence of the turbulent flow in the upper cavity 110a is reduced, so that the process gas G1 is uniformly deposited on the surface of the wafer 200. Degree will be improved. In other words, the chemical vapor deposition process 300 illustrated in FIG. 3 enables the process gas G1 to stably flow in a laminar flow in the upper cavity 110a, which is advantageous for controlling the uniformity of the product.
綜上所述，本發明上述的多個實施例所揭露的技術方案至少具有以下優點： In summary, the technical solutions disclosed in the foregoing various embodiments of the present invention have at least the following advantages:
(1)由於排氣通道連通製程腔體的下腔體與排氣管路，因此，被注入至製程腔體的下腔體中的吹驅氣體，將可以通過排氣通道而流動至排氣管路，繼而離開製程設備。而且，在製程設備運作時，由於製程氣體被注入至製程腔體的上腔體中，會使得上腔體中的壓力增加，因此，藉由維持排氣管路處於低壓的狀態，至少部份的吹驅氣體將會流動至壓力相對較低的排氣管路，而不會流動至壓力相對較高的上腔體。 (1) Since the exhaust passage communicates with the lower chamber of the process chamber and the exhaust line, the blow-in gas injected into the lower chamber of the process chamber can flow to the exhaust through the exhaust passage The tubing then leaves the process equipment. Moreover, when the process equipment is in operation, since the process gas is injected into the upper chamber of the process chamber, the pressure in the upper chamber is increased, and therefore, at least part of the exhaust line is maintained at a low pressure. The purge gas will flow to the relatively low pressure exhaust line without flowing to the relatively high pressure upper chamber.
(2)由於吹驅氣體流動至上腔體的機會降低，因此，吹驅氣體因流動至上腔體而於上腔體中產生紊流(Turbulent Flow)的機會也會降低。如此一來，製程氣體於上腔體中受到紊流影響的程度也將會降低，而能夠實質上保持以層流(Laminar Flow)的方式穩定地流動。如此一來，當製程氣體自上腔體沉積於晶圓的表面上時，由於紊流影響的程度降低，製程氣體沉積於晶圓表面上的均勻度將 會提高，亦即，晶圓表面上所形成之薄膜厚度不一的程度將會降低。換句話說，排氣通道能夠使製程氣體於上腔體中實質保持以層流的方式穩定地流動，將有利於晶圓在製程設備中進行化學氣相沉積，而製程氣體沉積於晶圓表面上的薄膜，也能夠得到更佳的品質控制。 (2) Since the chance of the purge gas flowing to the upper chamber is lowered, the chance of the turbulent flow in the upper chamber due to the flow of the purge gas to the upper chamber is also reduced. As a result, the degree of turbulence of the process gas in the upper chamber will also be reduced, and the flow can be stably maintained in a laminar flow manner. In this way, when the process gas is deposited on the surface of the wafer from the upper cavity, the uniformity of the process gas deposition on the surface of the wafer will be reduced due to the reduced degree of turbulence influence. It will increase, that is, the degree of film thickness formed on the surface of the wafer will be reduced. In other words, the exhaust passage enables the process gas to stably flow in a laminar manner in the upper chamber, which facilitates chemical vapor deposition of the wafer in the process equipment, and the process gas is deposited on the wafer surface. The film on the top can also achieve better quality control.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧製程設備 100‧‧‧Processing equipment
110‧‧‧製程腔體 110‧‧‧Processing cavity
110a‧‧‧上腔體 110a‧‧‧Upper cavity
110b‧‧‧下腔體 110b‧‧‧ lower cavity
111‧‧‧上腔壁 111‧‧‧ upper wall
112‧‧‧下腔壁 112‧‧‧ lower wall
113‧‧‧襯墊 113‧‧‧ cushion
113a‧‧‧上襯墊 113a‧‧‧Upper liner
113b‧‧‧下襯墊 113b‧‧‧ under liner
114‧‧‧製程氣體排氣通道 114‧‧‧Process gas exhaust passage
120‧‧‧晶圓承托裝置 120‧‧‧ wafer support device
121‧‧‧晶圓承托位置 121‧‧‧ wafer support location
122‧‧‧支架 122‧‧‧ bracket
123‧‧‧基座 123‧‧‧Base
130‧‧‧排氣管路 130‧‧‧Exhaust line
135‧‧‧排氣管路 135‧‧‧Exhaust line
140‧‧‧排氣通道 140‧‧‧Exhaust passage
150‧‧‧製程氣體源 150‧‧‧Process gas source
160‧‧‧吹驅氣體源 160‧‧‧Blowing gas source
170‧‧‧預熱單元 170‧‧‧Preheating unit
180‧‧‧製程氣體入口 180‧‧‧Process gas inlet
190‧‧‧吹驅氣體入口 190‧‧‧Blowing gas inlet
195‧‧‧高溫計 195‧‧‧ pyrometer
200‧‧‧晶圓 200‧‧‧ wafer
G‧‧‧間隙 G‧‧‧ gap
G1‧‧‧製程氣體 G1‧‧‧ process gas
G2‧‧‧吹驅氣體 G2‧‧‧Blowing gas
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| TW200804619A (en) * | 2006-05-16 | 2008-01-16 | Applied Materials Inc | In situ cleaning of CVD system exhaust |
| WO2011034057A1 (en) * | 2009-09-17 | 2011-03-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and gas supply mechanism for plasma processing apparatus |
| US8337619B2 (en) * | 2008-09-19 | 2012-12-25 | Applied Materials, Inc. | Polymeric coating of substrate processing system components for contamination control |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW200804619A (en) * | 2006-05-16 | 2008-01-16 | Applied Materials Inc | In situ cleaning of CVD system exhaust |
| US8337619B2 (en) * | 2008-09-19 | 2012-12-25 | Applied Materials, Inc. | Polymeric coating of substrate processing system components for contamination control |
| WO2011034057A1 (en) * | 2009-09-17 | 2011-03-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and gas supply mechanism for plasma processing apparatus |
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