JPH03270029A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH03270029A
JPH03270029A JP2070190A JP7019090A JPH03270029A JP H03270029 A JPH03270029 A JP H03270029A JP 2070190 A JP2070190 A JP 2070190A JP 7019090 A JP7019090 A JP 7019090A JP H03270029 A JPH03270029 A JP H03270029A
Authority
JP
Japan
Prior art keywords
film
interlayer film
diffusion layer
bonding
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2070190A
Other languages
English (en)
Inventor
Tatsuo Negoro
根来　達雄
Kazuhiro Yamada
和浩 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2070190A priority Critical patent/JPH03270029A/ja
Publication of JPH03270029A publication Critical patent/JPH03270029A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特に半導体チップにリード
線をボールボンディングして外部リードを接続するボン
ディングパッドを有する半導体装置に関する。
〔従来の技術〕
従来の半導体装置のボンディングパッドは、Ｓｉ上又は
熱酸化、気相成長等により形成された絶縁膜上に蒸着、
スパッタ法により形成された１〜６μｍのＡ！２薄膜に
より形成されている。
第３図はこの構造を示したものであり、半導体チップの
基板１内のベース拡散層２に包含されるエミッタ拡散層
３が形成され、エミッタ拡散層３の表面の一部にエミッ
タ電極となるＡ１薄膜４が形成されている。
又、多層配線構造を取る半導体装置で高耐圧素子からの
配線は、多層配線の最上層でボンディングパッドまで引
き出すと高温高湿ＢＴテスト等でＡ（腐食を起す。従っ
て、高耐圧素子からボンディングパッドへの引き出しは
、第２層以下の配線が用いられ、しかも、カバー膜より
内側に入れることにより、水分の浸入を防ぐ方法がとら
れている。
第４図はこの構造を示したものであり、半導体チップの
基板１上に絶縁膜８を介して第１Ａｆｆｌ１１９が形成
され、第１Ａｆｆｌ膜９上に形成された層間膜６の開口
部に第１Ａ、Ｒ膜９とオーミック接触して第２Ａｆｆｌ
膜１１のボンディングパッドが形成されている。
最上層には、カバー膜１０が形成されているが、層間膜
６がカバー膜１０より内側に入れであるので、段差部に
おいてボンディングにより層間膜６にしばしばクラック
１２の発生が認められた。
〔発明が解決しようとする課題〕
上述した従来の半導体チップ表面のボンディングパッド
では、コストダウンの為、ボンディング線をＡｕ線から
Ｃｕ線へ変えると、ＣｕボールはＡｕボールよりも硬度
、軟化温度が高い為、ボール熱圧着時にボール直下の八
（膜が剥離されて半導体チップに与えるダメージが大き
いという欠点があった。
又、多層配線構造では、層間膜がカバー膜より内側に入
れてあり、段差部において、ボンディングにより層間膜
にクラックが発生するという欠点があった。
本発明の目的は、ボール熱圧着時に半導体チップ表面に
ダメージを与えることがなく、又、層間膜にクラックの
発生がない半導体装置を提供することにある。
〔課題を解決するための手段〕
本発明は、半導体基板の一主面に少くともデバイスの一
部を形成し、該デバイスの端子にオーミックコンタクト
した金属により電極を取り出し、それぞれの前記金属の
一端にリード線をボールボッディングして外部リードを
接続するボンデインクパッドを有する半導体装置におい
て、少くとも一層の層間膜を有し、かつ、該層間膜のボ
ンディングボール径よりも小さい少くとも１個のコンタ
クト穴を通して前記層間膜下の配線金属とデバイス形成
用拡散表面のいずれか一方と前記層間膜上のボンデイン
クパッド用金属が電気的に接続されている。
〔実施例〕
次に、本発明の実施例について図面を参照して説明する
。
第１図は本発明の第１の実施例の要部断面図である。
第１の実施例は、第１図に示すように、半導体チップの
基板１内には、ベース拡散層２内に包含されるエミッタ
拡散層３が形成されている。
エミッタ拡散層３の表面のボンディングエリアには、例
えば、６０μｍのボール径よりも小さな例えば、直径２
０μｍのコンタクト穴５を有する５　０００Ａの熱酸化
膜である５ｉ０２膜からなる層間ｐＡ６を形成し、その
上にエミッタ電極となるＡ１薄膜４を蒸着により形成す
る。エミッタ拡散層３との電気的接続は、層間Ｍ６のコ
ンタクト穴５を介して行われる。
上記構造のエミッタ電極となるＡη薄膜４上にＣｕボー
ルが圧着された時のストレスは、層間膜６によって緩和
される。
第２図（ａ）、（ｂ）は本発明の第２の実施例の要部平
面図及びＡ−Ａ’線断面図である。
第２の実施例は、第２図（ａ）、（ｂ）に示すように、
基板を上には、絶縁膜８を介して第１Ａ（膜９が形成さ
れ、第１Ａβ膜９の上には、層間＠６が形成されている
。層間膜６には、Ｃｕボール７の中心を囲んで放射状に
コンタクト漬１５が形成され、層間膜６の上には、ボン
ディング面を平坦にすると同時に、たとえ層間膜６にク
ラック１２が入っても進行を阻止できる構造に第２六ρ
膜１１が形成され、第１Ａ々膜９とオーミック接触させ
ている。
更に、第２Ａρ膜１１は、ボンディングエリアを残して
カバー膜１０に被覆されているが、水分の浸入を防止す
る為に、最外周のコンタクト溝１５は、カバーｐＡ１０
の内周よりも内側の位置に形成されている。
〔発明の効果〕
以上説明したように本発明は、ボンディングエリア内の
第１Ａ４Ｍ上にコンタクト穴、または、コンタクト溝を
有する層間膜を形成することにより、次に列挙する効果
がある。
１）Ｃｕボール熱圧着時のストレスを緩和し、半導体チ
ップ表面や拡散接合部のダメージを防止できる。
２）層間膜のクラックを防止し、高温高温試験、さらに
は、加圧加湿バイアス試験にも耐える半導体装置を提供
できる。
の半導体装置の一例の要部断面図、第４図は従来の半導
体装置の他の例の要部断面図である。
１・・・基板、２・・・ベース拡散層、３・・・エミッ
タ拡散層、４・・・Ａ１薄膜、５・・・コンタクト穴、
６・・・層間膜、７・・・Ｃｕボール、８・・・絶縁膜
、９・・・第１Ａ１膜、１０・・・カバー膜、１１・・
・第２ＡＡ膜、１２・・・クラック、１５・・・コンタ
クト溝。

Claims (1)

  1. 【特許請求の範囲】 １、半導体基板の一主面に少くともデバイスの一部を形
    成し、該デバイスの端子にオーミックコンタクトした金
    属により電極を取り出し、それぞれの前記金属の一端に
    リード線をボールボンディングして外部リードを接続す
    るボンディングパッドを有する半導体装置において、少
    くとも一層の層間膜を有し、かつ、該層間膜のボンディ
    ングボール径よりも小さい少くとも１個のコンタクト穴
    を通して前記層間膜下の配線金属とデバイス形成用拡散
    表面のいずれか一方と前記層間膜上のボンディングパッ
    ド用金属を電気的に接続したことを特徴とする半導体装
    置。 ２、前記コンタクト穴が層間膜下の配線金属とデバイス
    形成用拡散表面のいずれか一方を底とし、ボンディング
    ボールの中心を囲んで放射状に形成されたコンタクト溝
    によって構成されていることを特徴とする請求項１記載
    の半導体装置。
JP2070190A 1990-03-19 1990-03-19 半導体装置 Pending JPH03270029A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2070190A JPH03270029A (ja) 1990-03-19 1990-03-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2070190A JPH03270029A (ja) 1990-03-19 1990-03-19 半導体装置

Publications (1)

Publication Number Publication Date
JPH03270029A true JPH03270029A (ja) 1991-12-02

Family

ID=13424359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2070190A Pending JPH03270029A (ja) 1990-03-19 1990-03-19 半導体装置

Country Status (1)

Country Link
JP (1) JPH03270029A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396110B1 (en) * 1997-03-28 2002-05-28 Nec Corporation Semiconductor device with multiple emitter contact plugs
JP2006294776A (ja) * 2005-04-08 2006-10-26 Toko Inc ダイオード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396110B1 (en) * 1997-03-28 2002-05-28 Nec Corporation Semiconductor device with multiple emitter contact plugs
JP2006294776A (ja) * 2005-04-08 2006-10-26 Toko Inc ダイオード

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