JP2540652B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2540652B2
JP2540652B2 JP2141684A JP14168490A JP2540652B2 JP 2540652 B2 JP2540652 B2 JP 2540652B2 JP 2141684 A JP2141684 A JP 2141684A JP 14168490 A JP14168490 A JP 14168490A JP 2540652 B2 JP2540652 B2 JP 2540652B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
semiconductor device
lead
metal
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2141684A
Other languages
English (en)
Other versions
JPH0437149A (ja
Inventor
隆夫 藤津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2141684A priority Critical patent/JP2540652B2/ja
Priority to EP00103351A priority patent/EP1020903B1/en
Priority to EP91108886A priority patent/EP0459493B1/en
Priority to KR1019910009041A priority patent/KR970000972B1/ko
Priority to DE69132685T priority patent/DE69132685T2/de
Priority to DE69133497T priority patent/DE69133497T2/de
Publication of JPH0437149A publication Critical patent/JPH0437149A/ja
Priority to US08/344,605 priority patent/US5654584A/en
Priority to US08/461,448 priority patent/US5556810A/en
Application granted granted Critical
Publication of JP2540652B2 publication Critical patent/JP2540652B2/ja
Priority to KR1019960058151A priority patent/KR970005716B1/ko
Priority to KR96058153A priority patent/KR970005718B1/ko
Priority to KR1019960058149A priority patent/KR970005714B1/ko
Priority to KR1019960058152A priority patent/KR970005717B1/ko
Priority to KR1019960058150A priority patent/KR970005715B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） この発明は半導体チップ上の電極とインナーリードと
の間の電気的接続が図られた半導体装置に係り、特に電
気的接続を図る配線間隔が微小な半導体装置に関する。
（従来の技術） 半導体装置を製造する際、半導体チップ上の電極パッ
ドとインナーリードとの間、アウターリードと印刷配線
基板上の配線パターンとの間、等のように相互に電気的
接続を図る箇所が多数存在する。従来、例えば半導体チ
ップ上の電極パッドとインナーリードとの間の電気的接
続は、通常、ワイヤボンディングによるAuワイヤもしく
はAlワイヤを用いた金属接合、TABテープ（Tape Automa
ted Bonding）による金属接合、フリップチップ等のバ
ンプ電極とリードとの間の金属間接合によるオーミック
コンタクト等によって行われる。
（発明が解決しようとする課題） ところで、ワイヤボンディングによる接続は、使用す
るボンディング用キャピラリィ（針）の外形により、隣
接するワイヤ間の最短距離が制約され、半導体チップ上
のパッド間距離を約100μｍ程度以下に縮小することは
難しい。また、AuボールやAlワイヤと半導体チップ上の
アルミニウム・パッドとの金属接続のため、加熱、加
圧、超音波振動等の物理的負荷を加える必要があり、時
としては電極パッド下の半導体チップそのものにダメー
ジを与えることがある。
一方、TABテープを使用する場合やフリップチップを
使用する場合は、Auバンプ、半田バンプとインナーリー
ドとの金属接続であり、ワイヤボンディング接続よりも
高温になることがあるため、加圧力による物理的ダメー
ジが残ることがある。この場合、パッド間隔は80μｍ程
度まで縮小できるが、金属接合を行うため、バンプサイ
ズの縮小には限界がある。しかも、多数箇所の接続を一
括して行うため、バンプ高さ、接続条件等、接続箇所が
多数になる程、接続の安定性を得るため難しく、プロセ
ス条件を安定化させる必要がある。
また、上記のような問題は、半導体チップ上のパッド
やバンプとインナーリードとの間の電気的接続のみでは
なく、アウターリードと印刷配線基板上の配線パターン
との間の電気的接続の場合等にも起こり得る。
この発明は上記のような事情を考慮してなされたもの
であり、その目的は、相互に電気的接続を図る箇所の間
隔を従来よりも縮小することができ、かつ電気的接続を
図る際に加熱、加圧等の物理的ダメージを与えないで高
い信頼性を有する半導体装置を提供することにある。
［発明の構成］ （課題を解決するための手段） この発明の半導体装置は、導電性材料からなるリード
と、表面に電極が形成された半導体チップと、上記リー
ドの先端部と上記半導体チップの電極とを電気的に接続
する導電性の接着剤からなる第１の接続部と、上記第１
の接続部の周囲を覆うように設けられ上記リードと上記
半導体チップの電極とを電気的に接続する金属メッキに
よる第２の接続部とを具備している。
（作 用） 相互に電気的に接続する必要があるリードフレームと
半導体チップの電極、又はリードフレームと配線基板の
配線パターンとの間を接続、金属メッキもしくは導電性
の接着剤と金属メッキとの併用によって行うことによ
り、各接続間に十分なオーミックコンタクトが形成でき
るとともに十分な機械的強度を持たせることができる。
しかも、複数箇所を一括して接続することができ、接続
時に加熱や加圧は不要である。
（実施例） 以下、図面を参照してこの発明を実施例により説明す
る。
第１図はこの発明の途中で考えられた半導体装置の構
成を示し、半導体チップ上の電極パッドとインナーリー
ドとの間の接続をメッキにより行なうようにした半導体
装置の一部構成を示す断面図であり、第２図はそのほぼ
全体の構成を示す断面図である。
図において、11はトランジスタ等の能動素子や、抵
抗，容量等の受動素子が形成されている半導体チップで
ある。この半導体チップ11の主面上の全周囲には、それ
ぞれ下層が例えばアルミニウム（A1）からなる金属層12
によって形成され、上層が少なくとも一層のニッケル層
を含む金属層13で構成された複数の電極パッド14が一定
の間隔で一列に配列されている。そして、上記各電極パ
ッド14の形成位置以外では、半導体チップ11はシリコン
酸化膜等の絶縁性の表面保護膜15で覆われている。さら
に、上記半導体チップ11はエポキシ系の接着剤16によっ
てTABテープ17の所定箇所に貼着されている。
上記TABテープ17は、第１図に示すように、エポキシ
やポリイミド系等の樹脂からなり膜厚が例えば75μｍ程
度の有機フィルム基材18に、膜厚が例えば35μｍ程度の
鋼（Cu）等の導体層をラミネートし、その後、選択エッ
チング技術によって上記複数の電極パッド14と接続すべ
き複数のインナーリード19及びこれら各インナーリード
19と接続された図示しないアウターリードとを備えた配
線パターンを形成することによって構成されている。そ
して、この配線パターンの形成面が上記接着剤16によっ
て半導体チップ11に貼着されている。
また、上記TABテープ17に半導体チップ11を貼着する
際は、上記複数のインナーリード19の先端部の各端面が
露出している付近に上記各電極パッド14が位置するよう
な状態で位置合わせが行われる。そして、半導体チップ
11上の各電極パッド14とインナーリード19の各先端部と
は、例えばニッケル（Ni）からなる金属メッキ層20を介
して電気的に接続されている。
第３図は上記各電極パッド14の詳細な構成を示す断面
図である。アルミニウム（Al）からなる金属層12上に形
成されている金属層13は少なくとも２層の金属層で構成
されている。すなわち、アルミニウムからなる金属層12
と接触する下層は例えば膜厚が1000Åのチタン（Ti）層
31からなり、上層は例えば膜厚が3000Åのニッケル（N
i）層32からなっている。ここで上層のニッケル層32
は、電極パッド14に対してニッケルからなる金属メッキ
層20の形成を可能にするために設けられているものであ
り、下層のチタン層31はバリアメタルの役割を持つ。
第４図は上記複数の電極パッド14と、TABテープ17に
形成された複数のインナーリード19との接続状態を示す
平面図であり、図中、斜線を施した領域が金属メッキ層
20を示している。
上記構成でなる半導体装置によれば、半導体チップ11
上の各電極パッド14とインナーリード17とを金属メッキ
層20を用いて接続するようにしているので、ワイヤボン
ディング、TAB接続等に使用されるボンディング用キャ
ピラリィ、TABツール治具の使用が不要になる。このた
め、各電極パッド14相互の間隔は100μｍ以下の例えば5
0μｍ程度にまで縮小することができる。また、各電極
パッド14と各インナーリード17とを電気的に接続する際
には物理的な加圧力が半導体チップ11に加わらないの
で、この加圧力のダメージによる信頼性の低下はなくな
る。そして、多数の接続箇所を一括してかつ同一条件で
行うことができるため、接続の信頼性が向上する。さら
に、接続時に加熱する必要がないので、半導体チップ11
を構成する各層の熱膨脹係数のミスマッチからくる熱応
力による信頼性低下も防止することができる。
ところで、上記電極パッドとインナーリードとを電気
的に接続する金属メッキ層の形成は次のようにして行わ
れる。すなわち、第５図のTABテープで示すように、前
記有機フィルム基材18に銅等の導体層をラミネートした
後、選択エッチング技術により、前記インナーリード及
びこのインナーリードと接続されたアウターリードとか
らなる複数のリード電極41を各半導体装置毎に形成す
る。このとき同時に、各半導体装置毎に複数のリード電
極41全体を接続する共通電極42を周囲に形成すると共に
これら全ての共通電極42も共通に接続しておく。なお、
第５図において、43は上記有機フィルム基材18に形成さ
れた開孔部である。第６図は上記第５図のTABテープに
おける１つの半導体装置の部分を拡大して示す平面図で
ある。第６図中、一点鎖線で示した領域に半導体チップ
11が位置するように位置合わせした状態でTABテープに
貼着される。このとき、前記したように、複数のインナ
ーリードの先端部の各端面が露出している付近に半導体
チップ上の各電極パッドが位置することになる。
この後、TABテープをメッキ用電極と共にニッケル・
メッキ浴に浸す。このニッケル・メッキ浴としては、一
般にワット浴と称され、硫酸ニッケル、塩化ニッケル及
び添加剤等からなるものがある。上記の両者をこのワッ
ト浴に浸した後、前記共通電極42が正極性、メッキ用電
極が負極性となるように両者間に所定の直流電圧を印加
し、電界メッキを所定時間行う。例えば、印加する直流
電圧を2V、両者間に流す電流を60mA、メッキ時間を10分
間としたところ、前記金属メッキ層20として10μｍの膜
厚のニッケル・メッキ層が得られた。このニッケル・メ
ッキ層は始めはインナーリードの先端部の各端面から成
長する。これがチップ上の電極パッドに接触すると、こ
の後は電極パッド上にもメッキ層が成長し、最終的には
両者がメッキ層によって電気的に接続されることにな
る。メッキ終了後は純水で洗浄され、メッキ時に表面に
付着した汚染物質が除去される。
なお、予めインナーリード及びアウターリードからな
る各リード電極41の、インナーリードの先端部を除いた
大部分の表面を例えばクリーンコートと称されるエポキ
シ系の絶縁被膜を被着させておくことにより、必要部分
にのみメッキ層を形成することができ、メッキ時間の短
縮を図ることができる。
ところで、上述した半導体装置では、半導体チップの
主面上に電極パッドが一定の間隔で一列に配列されてい
る場合について説明したが、第７図に示すこの発明の途
中で考えられた別の半導体装置は、半導体チップ上の電
極パッド14を千鳥状に配列したものである。なお、前記
第４図と対応する箇所には同じ符号を付してその説明は
省略する。また、第８図に示すこの発明の途中で考えら
れたさらに別の半導体装置は、半導体チップ上の電極パ
ッドをチップ上の全面にランダムに配置したた、いわゆ
るフリー・アクセス・パッド・レイアウト方式のもので
ある。後述するようにこの発明は、チップ上の電極パッ
ドの配置状態にかかわらず、どのような方式のものにも
実施することができる。
第９図はこの発明の途中で考えられたもう一つ別の半
導体装置を示すもので、リードフレームのアウターリー
ドと印刷配線基板上の配線パターンとの間の接続をメッ
キによって行なう半導体装置の断面図である。図におい
て、11は半導体チップ、17はTABテープである。この装
置の場合、TABテープのインナーリードの先端部と半導
体チップ11上の電極パッドとは、前述した各半導体装置
の場合と同様に金属メッキ層20によって電気的に接続さ
れている。さらにこの装置では、印刷配線基板51上に形
成されている配線パターン52と、TABテープのアウター
リードとの間も金属メッキ層20によって電気的に接続さ
れている。
次にこの発明の実施例を説明する。
第10図はこの発明を半導体チップ上の電極パッドとリ
ードフレームのインナーリードとの間の接続に実施した
半導体装置の構成を示す断面図である。この実施例の場
合、リードフレームは例えば４−２アロイと称される合
金や銅等からなる金属薄膜をプレスにより打ち抜き加工
して得られたものであり、このリードフレームのインナ
ーリード53の先端部と、半導体チップ11上の電極パッド
14とは、導電性の接着剤54と、前述した金属メッキ層20
と同様にして形成される金属メッキ層55とを併用して電
気的に接続されている。すなわち、この実施例による半
導体装置では、導電性の接着剤54の周囲を覆うように金
属メッキ層55を形成して、接着剤54と金属メッキ層55と
でインナーリード53と半導体チップ11上の電極パッド14
との電気的接続を図るようにしたものである。
TABテープを使用する前記第１図の装置の場合には、T
ABテープ上に半導体チップを接着剤により予め固定した
上で金属メッキ層を形成することができる。しかし、金
属薄膜を打ち抜き加工したリードフレームを使用する場
合にも、各電極パッド14上にスクリーン印刷の手法によ
り予め接着剤54を形成しておき、これらの接着剤によっ
てリードフレームと接着した後、前記と同様の方法によ
りメッキ層を形成することによって両者を電気的に接続
することができる。
なお、この発明は上記実施例に限定されるものではな
く、この他にも種々の変形が可能であることはいうまで
もない。例えば上記実施例では金属メッキ層がニッケル
・メッキ層である場合について説明したが、これは他に
金（Au）メッキ層、銅メッキ層等も使用可能である。
さらに上記実施例では、メッキ層を電界メッキ法によ
って形成する場合について説明したが、これは無電界メ
ッキ法によって形成することも可能である。
また、上記実施例では、予めインナーリードの先端部
を除いた大部分の表面に絶縁被膜を被着させておく場合
について説明した。しかし、電界メッキを行うときに、
インナーリードの先端部以外の箇所には先端部の約1/10
以下の厚みにしかメッキ層が成長しないので、前記絶縁
被膜の被着を省略することもできる。
さらに上記実施例の方法では、上記メッキ層を電界メ
ッキ法によって形成する場合について説明したが、これ
は無電界メッキ法によって形成することも可能である。
［発明の効果］ 以上説明したようにこの発明によれば、相互に電気的
接続を図る箇所の間隔を従来よりも縮小することがで
き、かつ電気的接続を図る際に加熱、加圧等の物理的ダ
メージを与えないで高い信頼性を有する半導体装置を提
供することができる。
【図面の簡単な説明】
第１図はこの発明の途中で考えられた半導体装置の一部
構成を示す断面図、第２図は上記第１図装置のほぼ全体
の構成を示す断面図、第３図は上記第１図装置における
電極パッドの詳細な構成を示す断面図、第４図は上記第
１図装置における複数の電極パッドと複数のインナーリ
ードとの接続状態を示す平面図、第５図及び第６図はそ
れぞれTABテープの平面図、第７図はこの発明の途中で
考えられた別の半導体装置の平面図、第８図はこの発明
の途中で考えられたさらに別の半導体装置の平面図、第
９図はこの発明の途中で考えられたもう一つ別の半導体
装置の断面図、第10図はこの発明の一実施例の半導体装
置の断面図である。 11……半導体チップ、12,13……金属層、14……電極パ
ッド、15……絶縁性の表面保護膜、16……エポキシ系の
接着剤、17……TABテープ、18……有機フィルム基材、1
9……インナーリード、20……金属メッキ層。

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】導電性材料からなるリードと、 表面に電極が形成された半導体チップと、 上記リードの先端部と上記半導体チップの電極とを電気
    的に接続する導電性の接着剤からなる第１の接続部と、 上記第１の接続部の周囲を覆うように設けられ上記リー
    ドと上記半導体チップの電極とを電気的に接続する金属
    メッキによる第２の接続部と を具備したことを特徴とする半導体装置。
JP2141684A 1990-06-01 1990-06-01 半導体装置 Expired - Fee Related JP2540652B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2141684A JP2540652B2 (ja) 1990-06-01 1990-06-01 半導体装置
EP00103351A EP1020903B1 (en) 1990-06-01 1991-05-31 A semiconductor device using a lead frame and its manufacturing method
EP91108886A EP0459493B1 (en) 1990-06-01 1991-05-31 A semiconductor device comprising a TAB tape and its manufacturing method
KR1019910009041A KR970000972B1 (ko) 1990-06-01 1991-05-31 반도체 장치 및 그 제조 방법
DE69132685T DE69132685T2 (de) 1990-06-01 1991-05-31 Halbleiteranordnung bestehend aus einem TAB-Band und deren Herstellungsverfahren
DE69133497T DE69133497T2 (de) 1990-06-01 1991-05-31 Leiterrahmen für eine Halbleiteranordnung und dessen Herstellungsverfahren
US08/344,605 US5654584A (en) 1990-06-01 1994-11-18 Semiconductor device having tape automated bonding leads
US08/461,448 US5556810A (en) 1990-06-01 1995-06-05 Method for manufacturing a semiconductor device wherein a semiconductor chip is connected to a lead frame by metal plating
KR1019960058151A KR970005716B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR96058153A KR970005718B1 (en) 1990-06-01 1996-11-27 A semiconductor device and its menufacture method
KR1019960058149A KR970005714B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR1019960058152A KR970005717B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법
KR1019960058150A KR970005715B1 (ko) 1990-06-01 1996-11-27 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2141684A JP2540652B2 (ja) 1990-06-01 1990-06-01 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1193496A Division JP2736247B2 (ja) 1996-01-26 1996-01-26 半導体装置の製造方法
JP8011933A Division JP2777345B2 (ja) 1996-01-26 1996-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JPH0437149A JPH0437149A (ja) 1992-02-07
JP2540652B2 true JP2540652B2 (ja) 1996-10-09

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JP2141684A Expired - Fee Related JP2540652B2 (ja) 1990-06-01 1990-06-01 半導体装置

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Country Link
US (1) US5654584A (ja)
EP (2) EP0459493B1 (ja)
JP (1) JP2540652B2 (ja)
KR (1) KR970000972B1 (ja)
DE (2) DE69132685T2 (ja)

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DE69133497D1 (de) 2006-01-19
US5654584A (en) 1997-08-05
EP0459493A3 (ja) 1994-02-23
DE69132685D1 (de) 2001-09-20
EP1020903A1 (en) 2000-07-19
EP0459493B1 (en) 2001-08-16
DE69132685T2 (de) 2002-06-13
EP0459493A2 (en) 1991-12-04
EP1020903B1 (en) 2005-12-14
DE69133497T2 (de) 2006-08-24
JPH0437149A (ja) 1992-02-07
KR920001701A (ko) 1992-01-30
KR970000972B1 (ko) 1997-01-21

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