JPH03259224A - Formation of insulating film of mim element - Google Patents
Formation of insulating film of mim elementInfo
- Publication number
- JPH03259224A JPH03259224A JP2058338A JP5833890A JPH03259224A JP H03259224 A JPH03259224 A JP H03259224A JP 2058338 A JP2058338 A JP 2058338A JP 5833890 A JP5833890 A JP 5833890A JP H03259224 A JPH03259224 A JP H03259224A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- plasma
- high frequency
- substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000003647 oxidation Effects 0.000 abstract description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 3
- 238000010186 staining Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はＭＩＭ素子の絶縁膜形成法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for forming an insulating film of an MIM element.
［従来の技術］
従来のＭＥＩＭ素子の絶縁膜形成法はデータ線のタンタ
ルを弱酸性クエン酸浴中で２０〜５０■の陽極酸化電圧
で陽極酸化して、ＭＩＭ素子の絶縁体である酸化タンタ
ル表面層を形成するものであった。[Prior art] The conventional method for forming an insulating film of an MEIM element is to anodize the tantalum of the data line in a weakly acidic citric acid bath at an anodic oxidation voltage of 20 to 50 μm to form tantalum oxide, which is the insulator of the MIM element. It formed a surface layer.
また別の方法としては、スパッタ法、熱酸化法ＯＶＤ法
等を用いて絶縁体を形成する方法があった。Another method is to form an insulator using a sputtering method, a thermal oxidation method, an OVD method, or the like.
［発明が解決しようとする課題］
しかし、前述の従来技術では、陽極酸化の場合溶液を使
うウェット手法であるため、溶液からの表面汚染、基板
乾燥時のシミの発生、排液処理等の問題があった。[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, since anodization is a wet method using a solution, problems such as surface contamination from the solution, generation of stains when the substrate dries, and drainage treatment occur. was there.
さらに、スパッタ法、熱酸化法、ＯＶＤ法の場合、数百
大の絶縁膜を大面積にわたって均一に形成することが困
難であるという問題点を有する。Furthermore, the sputtering method, thermal oxidation method, and OVD method have a problem in that it is difficult to uniformly form hundreds of insulating films over a large area.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、ＭＩＭ素子の絶縁膜をプラズマ
陽極酸化法で形成し、ウェットの陽極酸化にみられる表
面汚染等の問題を解決し、さらに基板への正のバイアス
電圧の開用により膜厚をコントロールし大面積にわたっ
て均一な絶縁膜を形成することのできるＭＩＭ素子の絶
縁膜形威法を提供するところにある。Therefore, the present invention is intended to solve these problems.The purpose of the present invention is to form the insulating film of the MIM element by plasma anodic oxidation, thereby solving problems such as surface contamination seen in wet anodic oxidation. Furthermore, it is an object of the present invention to provide a method for forming an insulating film of an MIM element, which can control the film thickness by applying a positive bias voltage to the substrate and form a uniform insulating film over a large area.
［課題を解決するための手段］
本発明のＭＩＭ素子の絶縁膜形戊法は、液晶パネルのア
クティブマトリクス用金属（Ｉ）−絶縁膜−金属（Ｉ［
） （ＭＩＭ）素子の絶縁膜形戊法にあって、前記金属
（Ｉ）表面を酸素ガスプラズマ中で発生する活性粒子に
よってプラズマ陽極酸化することを特徴とする。[Means for Solving the Problems] The insulating film forming method of the MIM element of the present invention is based on the metal (I)-insulating film-metal (I[
) (MIM) A method for forming an insulating film of an element, characterized in that the surface of the metal (I) is subjected to plasma anodization using active particles generated in oxygen gas plasma.
［実施例］
以下、本発明の実施例を図面に基づいて説明する。第１
図は本発明に用いる装置の実施例の概略図であって、図
中１は真空容器、２は基板ホルダ３は基板、４は高周波
電極、５はバイアス用定電圧電源で高周波成分をカット
するローパスフィルタ６を介して接続されている。７は
高周波電源８はマツチング回路で高周波電力の印加によ
り負にセルフバイアスされた高周波電極４の直流成分を
フィル９によりゼロにし、電極４のスパッタを抑制する
ように配慮されている。また、１０はガス導入口、１１
はガス排気口である。[Example] Hereinafter, an example of the present invention will be described based on the drawings. 1st
The figure is a schematic diagram of an embodiment of the apparatus used in the present invention, in which 1 is a vacuum container, 2 is a substrate holder, 3 is a substrate, 4 is a high frequency electrode, and 5 is a bias constant voltage power supply that cuts high frequency components. They are connected via a low-pass filter 6. Reference numeral 7 denotes a high frequency power source 8, which is a matching circuit designed to reduce the direct current component of the high frequency electrode 4, which has been negatively self-biased by the application of high frequency power, to zero by means of a filter 9, thereby suppressing sputtering of the electrode 4. In addition, 10 is a gas inlet port, 11
is the gas exhaust port.
この装置を用いたＭＩＭ素子の絶縁膜形戊法を以下に説
明する。A method of forming an insulating film of an MIM element using this device will be described below.
まず、ガラス基板上にパターニングされたタンタル基板
３を基板ホルダ２に設置し、排気口１１に連結した排気
装置によって、容器１内を〜１Ｏ−６ＴＯｒｒに排気し
た後、導入口１０より高純度酸素を導入し、真空度０．
５ Ｔ Ｏｒ ｒとなるように設定した。この状態で、
高周波電源７によって電極４に高周波電力（２００Ｗ）
を供給し、酸素プラズマを発生させた。基板３のＴａパ
ターン部に直流電源５によりバイアス電圧（３５ｖ）を
印加しプラズマ陽極酸化を行ない、約６００Ｘの酸化タ
ンタル絶縁膜を形成させた。First, a tantalum substrate 3 patterned on a glass substrate is placed on the substrate holder 2, and the inside of the container 1 is evacuated to ~1O-6 TOrr by an exhaust device connected to the exhaust port 11, and then high-purity oxygen is was introduced, and the degree of vacuum was 0.
It was set to be 5 T or r. In this state,
High frequency power (200W) is applied to the electrode 4 by the high frequency power source 7.
was supplied to generate oxygen plasma. A bias voltage (35 V) was applied to the Ta pattern portion of the substrate 3 from the DC power supply 5 to perform plasma anodic oxidation to form a tantalum oxide insulating film of approximately 600×.
この膜をＭＩＭ素子の絶縁膜としてＭＩＭ素子のスイッ
チング特性を評価したところ、今回使用した基板（２Ｄ
０ｍ角）全面で同じニーＶ特性を示し、面内で均一な
絶縁膜が得られていることがわかった。When we evaluated the switching characteristics of the MIM element using this film as an insulating film of the MIM element, we found that the substrate used this time (2D
It was found that the same knee V characteristics were exhibited over the entire surface (0 m square), and that an insulating film that was uniform within the surface was obtained.
さらに本発明の方法を用いると、従来の陽極酸化法に比
べて非線形性の強いニーＶ特性が得られＭＩＭ素子の絶
縁膜として顕著な特性改善が図られていることがわかっ
た。Furthermore, it has been found that when the method of the present invention is used, a knee V characteristic with stronger nonlinearity can be obtained compared to the conventional anodic oxidation method, and the characteristics of the insulating film of an MIM element are significantly improved.
［発明の効果］
以上述べたように本発明によれば、ＭＩＭ素子の絶縁膜
を酸素ガスプラズマ中での金属表面のプラズマ陽極酸化
で形成することにより、低温で数百Ｘの膜厚の絶縁膜を
制御性良く形成することができる。またウェット方式の
陽極酸化のような溶液からの表面汚染、基板乾燥時のシ
ミの発生、排液処理等の問題がなく液晶パネルのアクテ
ィブマトリクス用非線形２端子素子の絶縁膜が得られる
ことが可能である。さらに絶縁膜をサンドイッチする上
下の金属の皮膜法を真空装置で行なうと、ＭＩＭ３層を
すべて真空プロセスで行なうことが可能となり、基板表
面の清浄さが保たれ易く、ピンホールの減少をより効果
的になし得ることが可能となる。[Effects of the Invention] As described above, according to the present invention, the insulating film of the MIM element is formed by plasma anodic oxidation of the metal surface in oxygen gas plasma. A film can be formed with good controllability. In addition, it is possible to obtain an insulating film for a nonlinear two-terminal element for an active matrix of a liquid crystal panel without problems such as surface contamination from a solution, staining when the substrate dries, and drainage treatment, as in wet anodizing. It is. Furthermore, if the upper and lower metal coating method that sandwiches the insulating film is performed using a vacuum device, it becomes possible to perform all three MIM layers in a vacuum process, making it easier to maintain the cleanliness of the substrate surface and reducing pinholes more effectively. It becomes possible to do what is possible.
第１図は本発明に使用するプラズマ放電装置の概略構成
を示す断面図。
１・・・・・・・・・真空容器
２・・・・・・・・・基板ホルダ
３・・・・・・・・・基 板
４・・・・・・・・・高周波電極
５・・・・・・・・・バイアス用定電圧電源６・・・・
・・・・・ローパスフィルタ７・・・・・・・・・高周
波電源
８・・・・・・・・・マツチング回路
０９・・・・・・・・・コイル
１０・・・・・・・・・ガス導入口
１１・・・・・・・・・ガス排気口
以上FIG. 1 is a sectional view showing a schematic configuration of a plasma discharge device used in the present invention. 1... Vacuum container 2... Substrate holder 3... Substrate 4... High frequency electrode 5. ...... Constant voltage power supply for bias 6...
・・・・・・Low pass filter 7・・・・・・High frequency power supply 8・・・・・・Matching circuit 09・・・・・・・・・Coil 10・・・・・・・・・・・Gas inlet port 11・・・・・・・・・More than gas exhaust port
Claims (1)
絶縁膜−金属（II）（ＭＩＭ）素子の絶縁膜形成法にあ
って、前記金属（ I ）表面を酸素ガスプラズマ中で発
生する活性粒子によってプラズマ陽極酸化することを特
徴とするＭＩＭ素子の絶縁膜形成法。Metal for active matrix of liquid crystal panel (I) −
Insulating film - A method for forming an insulating film of a metal (II) (MIM) element, characterized in that the metal (I) surface is plasma anodized with active particles generated in oxygen gas plasma. Film formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058338A JPH03259224A (en) | 1990-03-09 | 1990-03-09 | Formation of insulating film of mim element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058338A JPH03259224A (en) | 1990-03-09 | 1990-03-09 | Formation of insulating film of mim element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03259224A true JPH03259224A (en) | 1991-11-19 |
Family
ID=13081534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2058338A Pending JPH03259224A (en) | 1990-03-09 | 1990-03-09 | Formation of insulating film of mim element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03259224A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565132A (en) * | 2018-05-15 | 2018-09-21 | 中国科学院深圳先进技术研究院 | A kind of fibrous material and preparation method thereof with metal oxide nanostructure |
-
1990
- 1990-03-09 JP JP2058338A patent/JPH03259224A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565132A (en) * | 2018-05-15 | 2018-09-21 | 中国科学院深圳先进技术研究院 | A kind of fibrous material and preparation method thereof with metal oxide nanostructure |
| CN108565132B (en) * | 2018-05-15 | 2019-09-27 | 中国科学院深圳先进技术研究院 | A kind of fibrous material and preparation method thereof with metal oxide nanostructure |
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