JPS62130524A - Plasma processing apparatus - Google Patents
Plasma processing apparatusInfo
- Publication number
- JPS62130524A JPS62130524A JP26929285A JP26929285A JPS62130524A JP S62130524 A JPS62130524 A JP S62130524A JP 26929285 A JP26929285 A JP 26929285A JP 26929285 A JP26929285 A JP 26929285A JP S62130524 A JPS62130524 A JP S62130524A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- chamber
- cleaning
- discharge
- protection plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はプラズマ処理装置に係り、特に処理室のクリー
ニングに好適なプラズマ処理装置である。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus suitable for cleaning a processing chamber.
真空下でガスをプラズマ化し、プラズマ構成種の優れた
特性を利用して試料の表面加工および表面改質、あるい
は試料に反応物を薄膜形成させる技術およびその装置が
種々の分野で実用化している。特にプラズマ構成種が物
質の微細加工に適していること、あるいはプラズマ化し
たある種のガスは反応性に富んでいることの理由で半導
体装置（ＶＬＳＩ）の製造のドライエツチングおよび気
相成長による薄膜形成に採り入れられ今では不可欠の技
術となっている。Techniques and equipment for turning gas into plasma under vacuum and utilizing the excellent properties of plasma constituent species to process and modify the surface of samples, or to form thin films of reactants on samples, have been put into practical use in various fields. . In particular, thin films by dry etching and vapor phase growth are used in the production of semiconductor devices (VLSI) because the constituent species of plasma are suitable for fine processing of materials, or because certain gases turned into plasma are highly reactive. It has now become an indispensable technique.
ＶＬＳＩの高集積化のためそのパターンは益々微細化し
、例えば４ Ｍｉ ｔｄ−ＲＡ Ｍでは最少加工寸法は
０．７〜０．８μｍに至っている。かかる超微細な分野
においては塵埃はＶＬＳ Ｉ製造の歩留りを支配するも
ので大赦であり清浄な環境が要求される。Due to the high integration of VLSI, its patterns are becoming increasingly finer, and for example, the minimum processing size of a 4 Mitd-RAM has reached 0.7 to 0.8 μm. In such ultra-fine fields, dust controls the yield of VLSI manufacturing, and a clean environment is required.
一方、特に半導体ウェハな加工するドライエツチング装
置あるいはウェハに反応物を堆積する薄膜形成装置では
、プラズマ化したガスからの反応重合物、プラズマ化し
たガスとウェハ構成成分との反応物、ウェハあるいはプ
ラズマにさらされる試料からの飛散物等が装置構成壁表
面に堆積付着するのが実情である。これらの堆積付着物
はある時期に構成壁から剥離し、試料北に落下する塵埃
となる。（飯田、”ＲＩＥ＋こおけるチャンバ内および
試ｔ−１汚染°、セミコンダクタワールド、１９８４．
１１．ＰＬ２７〜１３２）
従来は、Ｅ述の堆積物を除去（いわゆるクリーニング）
するのに処理装置の惹を開き、水、アルコールあるいは
アセトン等の薬液を浸した防塵布を用い人手によって拭
き取っている。クリーニングの頻度は試料の材質および
加工寸法番こよって異なるが多いものは数回のプラズマ
処理毎に実施する必要がある。クリーニング作業は第１
に処理装置を停止し、＊ｉの真空を破って大気に開放す
るため装置の構成材料が大気のガスおよび水分を吸着し
たり、薬液の湿分を吸着するため、再度真空状聾を得る
のに長時間を要し、処理装置の稼動率を引き下げ、第２
に装置構成材料への吸着成分が微妙に処理特性を狂わせ
処理性の再現性を悪くする、という問題を有していた。On the other hand, in dry etching equipment that processes semiconductor wafers or thin film forming equipment that deposits reactants on wafers, reaction polymers from plasma gas, reactants of plasma gas and wafer constituents, wafer or plasma The reality is that debris from samples exposed to heat accumulates and adheres to the surfaces of the walls of the equipment. At some point, these deposits peel off from the constituent walls and become dust that falls to the north of the sample. (Iida, “RIE+ chamber and test t-1 contamination”, Semiconductor World, 1984.
11. PL27-132) Conventionally, the deposits mentioned in E were removed (so-called cleaning).
To do this, the processing equipment is opened and wiped off manually using a dust-proof cloth soaked in a chemical solution such as water, alcohol, or acetone. The frequency of cleaning varies depending on the material and processing dimensions of the sample, but in most cases it is necessary to perform cleaning every several times of plasma processing. Cleaning work comes first
When the processing equipment is stopped, the vacuum of *i is broken and the equipment is opened to the atmosphere, so the equipment's constituent materials absorb gas and moisture from the atmosphere, and moisture from the chemical solution, so it is difficult to obtain vacuum-like deafness again. It takes a long time to process, reduces the operating rate of the processing equipment, and
In addition, there was a problem in that adsorbed components on the materials constituting the device slightly disrupted the processing characteristics and worsened the reproducibility of processing performance.
〔発明の目的〕
本発明の目的は、処理室内への堆積物の堆積付着面積を
できるだけ少くするとともに、処理室の真空をブレーク
することなくクリーニングできるようにすることで、稼
動率をｍ１できるプラズマ処理装置を提供することにあ
る。[Object of the Invention] The object of the present invention is to reduce the area where deposits accumulate in the processing chamber as much as possible, and to clean the processing chamber without breaking the vacuum, thereby creating a plasma that can increase the operating rate by m1. The purpose of this invention is to provide a processing device.
［発明の概要〕
本発明は、処理ガスが供給され所定の圧力に減圧排気さ
れる処理室内に、放電を発生させる電極を備えるプラズ
マ処理装置において、前記電極の放電空間部会二対向し
て設けた保護板と、前記保護板の反型極側に設けたクリ
ーニング電極と、前記クリーニング電極に放電電圧を印
加する放電電圧印加手段とを具備したことを特徴とし、
処理室内への堆積物の堆積付着面積をできるだけ少くす
るとともに、処理室の真空をブレークすることなくクリ
ーニングできるようにすることで、プラズマ処理装置の
稼動率を同上できるようにしたものである。[Summary of the Invention] The present invention provides a plasma processing apparatus equipped with an electrode for generating a discharge in a processing chamber to which a processing gas is supplied and which is evacuated to a predetermined pressure. characterized by comprising a protective plate, a cleaning electrode provided on the opposite side of the protective plate, and a discharge voltage applying means for applying a discharge voltage to the cleaning electrode,
The operating rate of the plasma processing apparatus can be increased by minimizing the area on which deposits accumulate in the processing chamber and by making cleaning possible without breaking the vacuum in the processing chamber.
以下、本発明の一実施例を第１図により説明する。第１
図は、この場合、ドライエツチング装置を示す。１は処
理室、２は処理室１内こ処理ガスを供給する処理ガス供
給装置、３は処理室１内を所定の圧力（こ減圧排気する
排気装置、４は処理室１内に設けられて試料５を載置す
る試料電極、６は処理室１内（こ設けられて試料電極４
に平行対向した対向電極、７は試料台電極４と対向電極
６との間の空間すなわち開口部薯こ対向して、試料電極
４と対向電極６とから離れて空間を取奄）囲む保護板、
８は試料電極４と対同電極６とを保護板７をはさんで取
り囲むクリーニング１！極、９は切替えスイッチ９を介
して、この場合試料電極４またはクリーニング１！極８
に高周波電圧を印加する放電電圧印加手段である高周波
電源、１０は高周波電源９の接続を試料電極４側とクリ
ーニング電極８側とに切替えるととも奢こ、高周波電源
９をクリーニング電極８側に接続したときに試料電極４
側を接地に接続する切替えスイッチ。１１はクリーニン
グ電極８の処理室１内壁側に取り付けた絶縁体、じはク
リーニング電極８に接続した電線を、処理室１の内外で
接続するフ不りタ。保護板７は、例えば、石英、セラミ
ックス等の絶縁材であり、かつスパ１夕効果やイオン反
応等を起こしにくい材質からなるもので、この場合はエ
ツチング状態を観察できるように透明な石英製としてい
る。An embodiment of the present invention will be described below with reference to FIG. 1st
The figure shows in this case a dry etching device. 1 is a processing chamber; 2 is a processing gas supply device that supplies processing gas into the processing chamber 1; 3 is an exhaust device that exhausts the inside of the processing chamber 1 to a predetermined pressure; 4 is an exhaust device provided in the processing chamber 1; A sample electrode 6 on which the sample 5 is placed is located inside the processing chamber 1 (this is provided in the sample electrode 4).
7 is a protection plate that surrounds the space between the sample stage electrode 4 and the counter electrode 6, that is, the opening (opposed to the space apart from the sample electrode 4 and the counter electrode 6); ,
8 is cleaning 1 which surrounds the sample electrode 4 and counter electrode 6 with a protective plate 7 in between! The pole, 9, via the changeover switch 9, in this case the sample electrode 4 or the cleaning 1! pole 8
A high-frequency power source 10 is a discharge voltage applying means for applying a high-frequency voltage to the sample electrode 4 side and a cleaning electrode 8 side. When sample electrode 4
Transfer switch that connects the side to ground. Reference numeral 11 denotes an insulator attached to the inner wall side of the processing chamber 1 of the cleaning electrode 8, and a ferrule for connecting the electric wire connected to the cleaning electrode 8 inside and outside the processing chamber 1. The protective plate 7 is made of an insulating material such as quartz or ceramics, and is made of a material that does not easily cause the spa bath effect or ionic reaction. In this case, it is made of transparent quartz so that the etched state can be observed. There is.
１記構成により、エツチング用の処理ガスを処理ガス供
給袋ｆｉｔ、 ２から処理室１に供給するとともに、排
気装置３によって所定の圧力に減圧排気して、試料１ｔ
！４に高周波電源９の高周波電圧を印加するように切替
えスイッチ１０を切換えておき、試料電［！４と対向電
極６との間で放電を起こさせ、試料５をプラズマエツチ
ングしていく。この際に堆積物が発生し、この堆積物が
処理室１内の内壁こ付着するのを保護板７で防き゛、保
護板７に付着させることで付着面積を少くさせる。保護
板７への付着堆積量が増えろと、は（離して塵埃となる
ので、その前に、保護板７のクリーニングを行なう。According to the configuration described in 1, the processing gas for etching is supplied from the processing gas supply bag 2 to the processing chamber 1, and is evacuated to a predetermined pressure by the exhaust device 3, and 1 ton of sample is
! The selector switch 10 is set so that the high frequency voltage of the high frequency power supply 9 is applied to the sample voltage [! A discharge is caused between the sample 4 and the counter electrode 6, and the sample 5 is plasma etched. At this time, deposits are generated, and the protection plate 7 prevents the deposits from adhering to the inner wall of the processing chamber 1. By allowing the deposits to adhere to the protection plate 7, the area of adhesion is reduced. If the amount of deposits on the protection plate 7 increases, it will separate and become dust, so the protection plate 7 should be cleaned before doing so.
クリーニング方法は、クリーニング用の処理ガスとして
、０２． Ｎ２． Ａｒ等のガスを処理ガス供給装置２
から処理室１に供給し、排気装置３によりりリーニング
用の圧力に調整し、クリーニング電極８Ｉこ高周波電源
９の高周波１圧を印加するよ５１こ切替えスイッチ１０
を切替えるとともに、試料電極４をアースに接地する。The cleaning method uses 02.0% as a processing gas for cleaning. N2. Processing gas supply device 2 for processing gas such as Ar
is supplied to the processing chamber 1 from the cleaning electrode 8I, adjusted to the pressure for cleaning by the exhaust device 3, and applies high frequency 1 pressure from the high frequency power source 9 to the cleaning electrode 8I.
At the same time, the sample electrode 4 is grounded.
これＩこより、試料電極４とクリーニング電極８および
対向電極６とクリーニング電極８との間壷こ放電が生じ
、クリーニング用の処理ガスがプラズマ化され、プラズ
マ中に位置する保護板７の堆積物がプラズマによりエツ
チング除去される。As a result, a bottle discharge occurs between the sample electrode 4 and the cleaning electrode 8 and between the counter electrode 6 and the cleaning electrode 8, the processing gas for cleaning is turned into plasma, and the deposits on the protection plate 7 located in the plasma are removed. Etched and removed by plasma.
なお、クリーニング中ｌこおいて、クリーニング電極８
と処理室１との間での放電を絶縁体１１によって防染゛
。Note that during cleaning, the cleaning electrode 8
The insulator 11 prevents discharge from occurring between the processing chamber 1 and the processing chamber 1.
以Ｅ、本−実施例によれば、試料電極４と対向［極６と
の回わりに保護板７を設けることにより試料５のエツチ
ング処理中における処理室１の内壁への堆積物の付着を
防σことができる。また、処理室１がステンレス等の金
属でできている場合には、試料電極４と対同電極６との
間のプラズマ１こより、処理室１内壁がスバヴタされ、
試料５が重金属汚染される可能性があるが、保護板７を
設けることζこより、処理室１内をがスパッタされず、
重金属汚染も防止することができる。さらに、保護板７
の外周にクリーニング電極を設けて試料型［１４および
対向ｉｔ極６との間に、クリーニング用の処理ガスのプ
ラズマを発生させることができるので、処理室１内の真
空をブレークすることなく、保護板７Ｉこ付着堆積した
堆積物をエツチング除去できるという効果がある。According to this embodiment, the protection plate 7 is provided around the sample electrode 4 and the opposing electrode 6 to prevent deposits from adhering to the inner wall of the processing chamber 1 during the etching process of the sample 5. σ can be done. Furthermore, when the processing chamber 1 is made of metal such as stainless steel, the inner wall of the processing chamber 1 is blown away by the plasma 1 between the sample electrode 4 and the counter electrode 6.
Although there is a possibility that the sample 5 is contaminated with heavy metals, the provision of the protective plate 7 prevents the inside of the processing chamber 1 from being sputtered.
Heavy metal pollution can also be prevented. Furthermore, the protective plate 7
A cleaning electrode is provided on the outer periphery of the sample mold [14] and a plasma of processing gas for cleaning can be generated between the sample mold [14] and the opposing IT electrode 6. This has the effect that deposits deposited on the plate 7I can be removed by etching.
次に、本発明の他の実施例を第２図薯こより説明する。Next, another embodiment of the present invention will be described with reference to FIG.
本図において、第１図と同符号は同一部材を示し、本図
が第２図と異なる点は、クリーニング電極８′が第１図
のクリーニング電極８に比べ長さが矩くなって、矢印１
３の方向に図示しない駆動装置によって移動可能番こ設
けであることである。In this figure, the same reference numerals as in FIG. 1 indicate the same members, and the difference between this figure and FIG. 1
It is provided with a counter that can be moved in the direction of No. 3 by a drive device (not shown).
Ｅ記ｉｌｌ成により、保護板７のクリーニングは、前記
一実施例と同様に、試料電極４および対同電極６とクリ
ーニング電極８′との間に、クリーニング用の処理ガス
のプラズマを発生させる。この際ｉこ、クリーニング電
極８′をＥ下させて、強いプラズマの範囲を移動させる
。According to the E illumination, cleaning of the protection plate 7 is performed by generating a plasma of a processing gas for cleaning between the sample electrode 4, the counter electrode 6, and the cleaning electrode 8', as in the previous embodiment. At this time, the cleaning electrode 8' is lowered to move the area of strong plasma.
以Ｅ、木地の実施例によれば、前記一実施例と同様の効
果があると同時に、クリーニングＩＣ［！８’を移動さ
せること１こよって、強いプラズマの範囲を移動させる
ことができるので、保護板７に付着堆積した堆積物をむ
らなくエツチング除去できるという効果がある。According to the embodiment of the wooden base, there is an effect similar to that of the above-mentioned embodiment, and at the same time, the cleaning IC [! By moving 8', the range of the strong plasma can be moved, so that the deposits deposited on the protective plate 7 can be evenly etched away.
なお、本実施例はニー１チング装置ｆこついて述べてき
たが、成膜装ＩＣこつぃても同様の効果を得ることがで
きる。Although this embodiment has been described with reference to the kneeling device f, the same effect can be obtained by using the film forming device IC.
また、本実施例では試料電極５と対向ｆ！極６とが、横
１きで平行な平板で形成しであるが、電極は平行、弘板
でなくても良いし、横置き（こなっている必要もな（，
１！極の姿勢によって保護板７の働きおよび保護板７に
付着堆ｆＮ ｔ−’た堆積物の工・ノチング除去Ｊこ影
響を与えるものではない。In addition, in this embodiment, the sample electrode 5 and the opposing f! The electrodes 6 are formed of horizontally parallel flat plates, but the electrodes do not have to be parallel or wide plates, and they do not need to be horizontally arranged (
1! The position of the pole does not affect the function of the protection plate 7 or the processing and notching removal of deposits attached to the protection plate 7.
本発明（こよれば、保護板を設けることｌこよって堆積
物の堆積付着面積を少なくすることができ、クリーニン
グ電極に高周波電圧を印加することで、保護板の設けら
れた部分ｉこプラズマを発生させることができるので、
処理室の真空をブレークすることな（処理室内をクリー
ニングでき、装置の稼動率を回１できるという効果があ
乙。According to the present invention, by providing a protective plate, the area on which deposits are deposited can be reduced, and by applying a high frequency voltage to the cleaning electrode, plasma can be removed from the area where the protective plate is provided. Because it can be generated,
It does not break the vacuum in the processing chamber (it has the effect of cleaning the inside of the processing chamber and reducing the operating rate of the equipment by 1).
第１図は本発明の一実施例であるプラズマ処理装置を示
す構成図、舅２図は本発明の他の実施例であるプラズマ
処理装置を示す構成図である。FIG. 1 is a block diagram showing a plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram showing a plasma processing apparatus according to another embodiment of the present invention.
Claims (1)
理室内に、放電を発生させる電極を備えるプラズマ処理
装置において、前記電極の放電空間部に対向して設けた
保護板と、前記保護板の反電極側に設けたクリーニング
電極と、前記クリーニング電極に放電電圧を印加する放
電電圧印加手段とを具備したことを特徴とするプラズマ
処理装置。1. In a plasma processing apparatus equipped with an electrode that generates a discharge in a processing chamber to which a processing gas is supplied and which is evacuated to a predetermined pressure, a protection plate provided opposite to the discharge space of the electrode, and the protection plate 1. A plasma processing apparatus comprising: a cleaning electrode provided on a side opposite to the electrode; and discharge voltage applying means for applying a discharge voltage to the cleaning electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26929285A JPS62130524A (en) | 1985-12-02 | 1985-12-02 | Plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26929285A JPS62130524A (en) | 1985-12-02 | 1985-12-02 | Plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62130524A true JPS62130524A (en) | 1987-06-12 |
Family
ID=17470314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26929285A Pending JPS62130524A (en) | 1985-12-02 | 1985-12-02 | Plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62130524A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6490522A (en) * | 1987-10-01 | 1989-04-07 | Seiko Epson Corp | Plasma cvd system |
| JPH01231322A (en) * | 1988-03-11 | 1989-09-14 | Sumitomo Metal Ind Ltd | Plasma processing device |
| JPH02130826A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Method and apparatus for processing with plasma |
| US5112641A (en) * | 1989-01-28 | 1992-05-12 | Kokusai Electric Co., Ltd. | Wafer transfer method in vertical cvd diffusion apparatus |
| KR20050004995A (en) * | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | Apparatus for processing a substrate using a plasma |
| JP2007035855A (en) * | 2005-07-26 | 2007-02-08 | Shibaura Mechatronics Corp | Plasma processing apparatus and cleaning method thereof |
-
1985
- 1985-12-02 JP JP26929285A patent/JPS62130524A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6490522A (en) * | 1987-10-01 | 1989-04-07 | Seiko Epson Corp | Plasma cvd system |
| JPH01231322A (en) * | 1988-03-11 | 1989-09-14 | Sumitomo Metal Ind Ltd | Plasma processing device |
| JPH02130826A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Method and apparatus for processing with plasma |
| US5112641A (en) * | 1989-01-28 | 1992-05-12 | Kokusai Electric Co., Ltd. | Wafer transfer method in vertical cvd diffusion apparatus |
| KR20050004995A (en) * | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | Apparatus for processing a substrate using a plasma |
| JP2007035855A (en) * | 2005-07-26 | 2007-02-08 | Shibaura Mechatronics Corp | Plasma processing apparatus and cleaning method thereof |
| JP4721336B2 (en) * | 2005-07-26 | 2011-07-13 | 芝浦メカトロニクス株式会社 | Plasma processing apparatus and cleaning method thereof |
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