JPH0348824A - Production of mim type nonlinear switching element - Google Patents
Production of mim type nonlinear switching elementInfo
- Publication number
- JPH0348824A JPH0348824A JP1185335A JP18533589A JPH0348824A JP H0348824 A JPH0348824 A JP H0348824A JP 1185335 A JP1185335 A JP 1185335A JP 18533589 A JP18533589 A JP 18533589A JP H0348824 A JPH0348824 A JP H0348824A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- entire surface
- metal
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示装置に設置されるスイッチング素子
のうち、金属−絶縁体−金属の３層構造からなる素子（
Ｍｅｔａｌ−Ｉｎｓｕｌａｔｏｒ−Ｍｅｔａｌ、以下Ｍ
Ｉ Ｍ素子と呼ぶ）の製造方法に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a switching element having a three-layer structure of metal-insulator-metal among switching elements installed in a liquid crystal display device (
Metal-Insulator-Metal, hereinafter M
The present invention relates to a method for manufacturing an IM element (referred to as an IM element).
ＭＩＭ素子は、印加電圧が低い場合には高抵抗、印加電
圧が高い場合には低抵抗となる電気的特性を有し、ガラ
ス基板上にも容易に形成できるため、液晶表示装置のス
イッチング素子として利用することが提案されている。MIM elements have electrical characteristics such as high resistance when the applied voltage is low and low resistance when the applied voltage is high, and can be easily formed on glass substrates, so they are used as switching elements in liquid crystal display devices. It is proposed to use.
従来例におけるこのＭ Ｉ Ｍ素子の製造方法を第３図
を用いて説明する。A conventional method of manufacturing this MIM element will be explained with reference to FIG.
まずガラス基板１上の全面に金属２を形成する。First, metal 2 is formed on the entire surface of glass substrate 1.
その後全面に感光性樹脂を形成し、マスクを用いて露光
現像を行ないこの感光性樹脂をバターニングし、このバ
ターニングした感光性樹脂をエツチングマスクにして金
属２をエツチングする、いわゆるフォトエツチングによ
り金属２をエツチングする。After that, a photosensitive resin is formed on the entire surface, and this photosensitive resin is patterned by exposure and development using a mask.The metal 2 is etched using the patterned photosensitive resin as an etching mask. Etch 2.
次にこの金属２上に陽極酸化法や熱酸化法等を用いて絶
縁体６を形成する。Next, an insulator 6 is formed on this metal 2 using an anodic oxidation method, a thermal oxidation method, or the like.
その後基板上に全面に透明導電膜４を形成しフォトエツ
チングを用いてこの透明画素電極をパタニングして、Ｍ
ＩＭ素子を製造している。After that, a transparent conductive film 4 is formed on the entire surface of the substrate, and this transparent pixel electrode is patterned using photoetching.
Manufactures IM devices.
（特開昭５７−１９６２９０号報）
〔発明が解決しようとする課題〕
しかしながら前述したＭＩＭ素子の製造方法においては
、下記のような課題を有している。(Unexamined Japanese Patent Publication No. 57-196290) [Problems to be Solved by the Invention] However, the method for manufacturing the MIM element described above has the following problems.
（イ）絶縁体６と透明導電膜４、およびガラス基板１と
透明導電膜４との密着に問題がある。(a) There is a problem in the close contact between the insulator 6 and the transparent conductive film 4, and between the glass substrate 1 and the transparent conductive film 4.
（ロ）第３図の内部１０に示したような、前述の密着性
に起因する金属２０段差破覆部において透明導電膜４の
サイドエツチングが発生し、断線が多発する。(b) As shown in the interior 10 of FIG. 3, side etching of the transparent conductive film 4 occurs at the broken portion of the metal 20 step caused by the above-mentioned adhesion, resulting in frequent disconnections.
ｅ→ 同様に前述の密着性に起因する透明導電膜４のパ
ターニング時の寸法バラツキが大きいためＭＩＭ素子の
面積バラツキが大きい。e→ Similarly, since there are large dimensional variations during patterning of the transparent conductive film 4 due to the above-mentioned adhesion, there are large area variations of the MIM element.
巨）前述の素子面積バラツキに起因するＭ Ｉ Ｍ素子
の電流−電圧特性、特に高電圧側でのバラツキが大きい
。Large) The current-voltage characteristics of the MIM element, particularly on the high voltage side, are highly variable due to the above-mentioned variation in device area.
（ホ）前述の電流−電圧特性のバラツキに起因する電流
−電圧特性の安定性、再現性が著しく低下する。(e) The stability and reproducibility of the current-voltage characteristics are significantly reduced due to the above-mentioned variations in the current-voltage characteristics.
本発明の目的は、絶縁膜と透明導電膜との密着不良、お
よびガラス基板と透明導電膜との密着不良を解決し、透
明導電膜のサイドエッチをなくし、第１の金属の段差被
覆部における透明導電膜の断線を防止でき、ＭＩＭ素子
の電流−電圧特性のバラツキをなくシ、従ってこの電流
−電圧特性の再現性、安定性を向上させる事のできるＭ
Ｉ Ｍ素子の製造方法を提供するものである。The purpose of the present invention is to solve the problems of poor adhesion between an insulating film and a transparent conductive film, and between a glass substrate and a transparent conductive film, to eliminate side etching of a transparent conductive film, and to eliminate the problem of poor adhesion between an insulating film and a transparent conductive film, and to eliminate side etching of a transparent conductive film. M that can prevent disconnection of the transparent conductive film, eliminate variations in the current-voltage characteristics of the MIM element, and improve the reproducibility and stability of the current-voltage characteristics.
A method for manufacturing an IM element is provided.
上記目的を達成するために、本発明のＭＩＭ素子の製造
方法においては、絶縁膜形成後に酸洗浄処理を施すか、
スパッタライトエツチング処理を施すか、またはスパッ
タライトエツチング処理と酸洗浄処理の両方を施すこと
を特徴とする。In order to achieve the above object, in the method for manufacturing an MIM element of the present invention, acid cleaning treatment is performed after forming an insulating film,
It is characterized by performing sputter light etching treatment or by performing both sputter light etching treatment and acid cleaning treatment.
〔実施例１〕 以下、本発明の実施例を図面に基づいて詳述する。[Example 1] Hereinafter, embodiments of the present invention will be described in detail based on the drawings.
第１図は本発明の一実施例におけるＭＩＭ素子の製造方
法を工程順に示す断面図であり、第２図は本発明のＭＩ
Ｍ素子を示す平面図である。以下第１図と第２図とを参
照して説明する。FIG. 1 is a cross-sectional view showing the manufacturing method of an MIM device according to an embodiment of the present invention in the order of steps, and FIG.
FIG. 3 is a plan view showing an M element. This will be explained below with reference to FIGS. 1 and 2.
まず第１図（ａ）に示すように、金属２としてガラス基
板１上にスパッタリング法や蒸着法等を用いてタンタル
（Ｔａ ）を１００ ｎｍ〜５００ ｎ、ｍの厚さで形
成し、第１図（ｂ）に示すように、フォトエツチングを
用いて金属２をバターニングする。First, as shown in FIG. 1(a), tantalum (Ta) is formed as a metal 2 on a glass substrate 1 to a thickness of 100 nm to 500 nm by using a sputtering method or a vapor deposition method. As shown in Figure (b), the metal 2 is patterned using photoetching.
その後第１図（ｃ）に示すように絶縁体６を得るために
、金属２であるタンタルを０．５ｇ／’ｌ〜５０ ｇ／
１１のクエン酸溶液中における陽極酸化法を行う。ある
いはこの陽極酸化法の代わりに、温度２００°Ｃ〜４５
０℃の酸素雰囲気中で熱処理するいわゆる熱酸化法を行
なう。陽極酸化あるいは熱酸化にて形成する絶縁体３と
しての酸化タンタルは５ｎｍ〜ＩＱＯｎｍの厚さで形成
する。または、スパッタリング法や蒸着法や化学気相成
長法等を用いて酸化タンタル、酸化硅素、窒化硅素等を
５ｎｍ〜１１００ｎ全面に形成する。Thereafter, in order to obtain the insulator 6 as shown in FIG.
The anodic oxidation method in citric acid solution of No. 11 is carried out. Alternatively, instead of this anodizing method, a temperature of 200°C to 45°C can be used.
A so-called thermal oxidation method in which heat treatment is performed in an oxygen atmosphere at 0° C. is performed. Tantalum oxide as the insulator 3 is formed by anodic oxidation or thermal oxidation to a thickness of 5 nm to IQOnm. Alternatively, tantalum oxide, silicon oxide, silicon nitride, or the like is formed over the entire surface to a thickness of 5 nm to 1100 nm using a sputtering method, a vapor deposition method, a chemical vapor deposition method, or the like.
その後１％〜３８％の塩酸溶液中に浸して洗浄を行なう
。上記の塩酸の代わりに塩酸、硫酸、硝酸、酢酸、リン
酸のうちの１種類、もしくは少なくとも２種類以上の混
合液、もしくはこれらに過酸化水素水、及び水のうちど
ちらか一方もしくは両方を加えた溶液を用いて行なって
も同様の効果を得ることが可能である。Thereafter, it is washed by immersing it in a 1% to 38% hydrochloric acid solution. Instead of the above hydrochloric acid, add one or both of hydrochloric acid, sulfuric acid, nitric acid, acetic acid, and phosphoric acid, or a mixture of at least two of these, or hydrogen peroxide and water. A similar effect can be obtained by using a different solution.
最後に、第１図（（１）に示すように、透明画素電極を
形成するために、透明導電膜４として例えばＩ ＴＯ（
Ｉ ｎ２ ｏ３ ａ Ｓ ｎｏｔ ）を５０ｎｍ〜５０
０ｎｍの厚さスパッタリング法や蒸着法等を用いて形成
し、フォトエツチング法によりバターニングして当該へ
・ｉＩＭ素子を得る。このＭ Ｉ Ｍ素子の平面図を第
２図に示す。Finally, as shown in FIG. 1 ((1), in order to form a transparent pixel electrode, for example, ITO (
I n2 o3 a S not ) from 50 nm to 50
It is formed to a thickness of 0 nm using a sputtering method, a vapor deposition method, etc., and is patterned by a photoetching method to obtain the iIM element. A plan view of this MIM element is shown in FIG.
〔実施例２〕
実施例１に述べた方法を用いて金属２をバターニングし
絶縁体６を形成する。[Example 2] Using the method described in Example 1, the metal 2 is buttered to form the insulator 6.
その後、第４図に示すようなアルゴンガスを導入した真
空槽６１内において圧力Ｏ】〜５０Ｐａ、投入電力密度
０１〜１０ Ｗ ／ ａｔ：、処理時間１０砂〜３０分
の範囲でスパッタライトエツチング処理をガラス基板１
の全面に施す。アルゴンガスの代わりにネオン（Ｎｅ）
、クリプトン（Ｋｒ ）等の不活性ガスを用いても同様
の効果を得られる。Thereafter, sputter light etching is carried out in a vacuum chamber 61 into which argon gas is introduced as shown in FIG. Glass substrate 1
Apply to the entire surface. Neon (Ne) instead of argon gas
A similar effect can be obtained by using an inert gas such as , krypton (Kr), or the like.
尚、前述のスパッタライトエツチング処理を施す際に、
基板ホルダー６４として例えばアルミナ、酸化硅素、炭
素、硅素、チタン等の低スパツタ率の物質でできたもの
や、もしくはこれらの物質で覆われたものを用いると、
基板の汚染を効果的に防ぐことができる。さらに基板を
５０℃〜４００°Ｃの間で加熱しながら行なったり、第
５図に示すように投入する高周波電力６６に−１０〜−
１００ＯＶＯ間で直流成分６７を印加したり、高周波電
力６６として例えばマイクロ波を用いろと、スパッタエ
ツチング速度が大きくなるので、より効果的にスパッタ
ライトエツチング処理を行なうことが可能である。In addition, when performing the sputter light etching treatment mentioned above,
If the substrate holder 64 is made of a material with a low spatter rate, such as alumina, silicon oxide, carbon, silicon, or titanium, or is covered with one of these materials,
Contamination of the substrate can be effectively prevented. Further, the substrate is heated between 50° C. and 400° C., and the high frequency power 66 applied as shown in FIG.
By applying the DC component 67 between 100 OVO or by using microwaves as the high frequency power 66, for example, the sputter etching speed increases and it is possible to perform the sputter light etching process more effectively.
最後に、実施例１で述べた方法で透明導電膜４を形成し
て当該ＭＩＭ素子を得る。Finally, the transparent conductive film 4 is formed by the method described in Example 1 to obtain the MIM element.
〔実施例３〕
実施例１で述べた方法で第１の金属２をバターニングし
た後、絶縁体６を形成する。[Example 3] After the first metal 2 is patterned by the method described in Example 1, the insulator 6 is formed.
その後、実施例２で述べた方法でスパッタライトエツチ
ング処理を施す。Thereafter, sputter light etching treatment is performed using the method described in Example 2.
その後、実施例１で述べた方法で酸洗浄処理を施す。Thereafter, acid cleaning treatment is performed using the method described in Example 1.
最後に、実施例１で述べた方法で透明導電膜４を形成し
て当該ＭＩＭ素子を得る。Finally, the transparent conductive film 4 is formed by the method described in Example 1 to obtain the MIM element.
尚、酸洗浄処理を施した後にスパッタライトエツチング
処理を施しても同様の効果が得られる。Note that the same effect can be obtained even if the sputtering light etching treatment is performed after the acid cleaning treatment.
以」二の説明で明らかなように、本発明によればガラス
基板と透明導電膜、及び絶縁膜３と透明導電膜の密着が
良好で、Ｍ Ｉ Ｍ素子の素子面積バラツキもなく、段
差被覆部分におけるサイドエッチも発生せず、断線を防
止し電流−電圧特性のバラツキがなく安定性、再現性を
著しく向上させたＭ、 Ｉ Ｍ素子の製造が可能となる
。本発明を液晶表示装置の製造等に応用すれば、その効
果は絶大である。As is clear from the following explanation, according to the present invention, there is good adhesion between the glass substrate and the transparent conductive film, and between the insulating film 3 and the transparent conductive film, there is no variation in the element area of the MIM element, and there is no difference in step coverage. It is possible to manufacture M and IM elements that do not cause side etching in portions, prevent disconnection, have uniform current-voltage characteristics, and have significantly improved stability and reproducibility. If the present invention is applied to the manufacture of liquid crystal display devices, the effects will be tremendous.
第１図（ａ、）〜（ｄ）は本発明の一実施例におけるＭ
Ｉ Ｍ素子の製造方法を工程順に示す断面図、第２図
は本発明の一実施例におけるＭＩＭ素子の平面図、第３
図は従来例によるＭＩＭ素子の斜視図、第４図は本発明
の実施例におけるスパッタライトエツチング処理を行な
うときの状態を表す模式図、第５図は本発明の実施例中
における高周波電力に直流成分を印加しスパッタエツチ
ング処理を行なうときの状態を表す模式図である。
１・・・・・・ガラス基板、
２・・・・・・金属、
６・・・・・・絶縁体、
４・・・・・・透明導電膜。
第２図
第３図FIGS. 1(a,) to (d) show M in an embodiment of the present invention.
FIG. 2 is a plan view of an MIM device according to an embodiment of the present invention; FIG.
The figure is a perspective view of an MIM element according to a conventional example, FIG. 4 is a schematic diagram showing the state when performing sputter light etching processing in an embodiment of the present invention, and FIG. FIG. 2 is a schematic diagram showing a state when applying components and performing sputter etching processing. 1...Glass substrate, 2...Metal, 6...Insulator, 4...Transparent conductive film. Figure 2 Figure 3
Claims (3)
ォトエッチングにより該金属をパターニングする工程と
、前記金属の表面に絶縁体を形成する工程と、全面に酸
洗浄処理を施す工程と、全面に透明導電膜を形成し第２
番目のフォトエッチングにより該透明導電膜を透明画素
電極の形状にパターニングする工程とを有することを特
徴とするＭＩＭ型非線形スイッチング素子の製造方法。(1) A step of forming a metal on the entire surface of the glass substrate and patterning the metal by first photo-etching, a step of forming an insulator on the surface of the metal, and a step of performing acid cleaning treatment on the entire surface. , a transparent conductive film is formed on the entire surface, and the second
A method for manufacturing an MIM type nonlinear switching element, comprising the step of patterning the transparent conductive film in the shape of a transparent pixel electrode by photo-etching.
ォトエッチングにより該金属をパターニングする工程と
、前記金属の表面に絶縁体を形成する工程と、全面にス
パッタライトエッチング処理を施す工程と、全面に透明
導電膜を形成し第２番目のフォトエッチングにより該透
明導電膜を透明画素電極の形状にパターニングする工程
とを有することを特徴とするＭＩＭ型非線形スイッチン
グ素子の製造方法。(2) A step of forming metal on the entire surface of the glass substrate and patterning the metal by first photo-etching, a step of forming an insulator on the surface of the metal, and a step of performing sputter light etching treatment on the entire surface. A method for manufacturing an MIM type nonlinear switching element, comprising the steps of: forming a transparent conductive film on the entire surface and patterning the transparent conductive film in the shape of a transparent pixel electrode by a second photo-etching.
ォトエッチングにより該金属をパターニングする工程と
、前記金属の表面に絶縁体を形成する工程と、全面に酸
洗浄処理とスパッタライトエッチング処理とを施す工程
と、全面に透明導電膜を形成し第２番目のフォトエッチ
ングにより該透明導電膜を透明画素電極の形状にパター
ニングする工程とを有することを特徴とするＭＩＭ型非
線形スイッチング素子の製造方法。(3) A step of forming metal on the entire surface of the glass substrate and patterning the metal by first photo-etching, a step of forming an insulator on the surface of the metal, and acid cleaning treatment and sputter light etching on the entire surface. an MIM type nonlinear switching element characterized by comprising the steps of: forming a transparent conductive film on the entire surface and patterning the transparent conductive film in the shape of a transparent pixel electrode by a second photo-etching process; Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185335A JPH0348824A (en) | 1989-07-18 | 1989-07-18 | Production of mim type nonlinear switching element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185335A JPH0348824A (en) | 1989-07-18 | 1989-07-18 | Production of mim type nonlinear switching element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0348824A true JPH0348824A (en) | 1991-03-01 |
Family
ID=16169006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1185335A Pending JPH0348824A (en) | 1989-07-18 | 1989-07-18 | Production of mim type nonlinear switching element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0348824A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008112671A (en) * | 2006-10-31 | 2008-05-15 | Omron Corp | Switch |
-
1989
- 1989-07-18 JP JP1185335A patent/JPH0348824A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008112671A (en) * | 2006-10-31 | 2008-05-15 | Omron Corp | Switch |
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