JPH03219680A - Manufacture of josephson junction - Google Patents
Manufacture of josephson junctionInfo
- Publication number
- JPH03219680A JPH03219680A JP2014694A JP1469490A JPH03219680A JP H03219680 A JPH03219680 A JP H03219680A JP 2014694 A JP2014694 A JP 2014694A JP 1469490 A JP1469490 A JP 1469490A JP H03219680 A JPH03219680 A JP H03219680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposited
- thickness
- josephson junction
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000008961 swelling Effects 0.000 claims abstract description 8
- 229920001002 functional polymer Polymers 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 10
- 239000007789 gas Substances 0.000 abstract description 9
- 229920001721 polyimide Polymers 0.000 abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 4
- 229910017107 AlOx Inorganic materials 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 230000035515 penetration Effects 0.000 abstract description 2
- 229920002521 macromolecule Polymers 0.000 abstract 1
- 239000010955 niobium Substances 0.000 description 28
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、非常に薄い機能性高分子フィルム上のジョセ
フソン接合素子の作製方法に関Ｌ５゜基板となる機能性
高分子フィルムの膨潤を防ぐことを目的とし。[Detailed Description of the Invention] [Summary] The present invention relates to a method for manufacturing a Josephson junction element on a very thin functional polymer film, and its purpose is to prevent swelling of the functional polymer film serving as the L5° substrate. year.
機能性高分子フィルム上にジョセフソン接合素子を作製
する前に、あらかじめ、該機能性高分子フィルムの両面
に、水や有機溶剤による膨潤を防ぐ為の保護膜を被覆す
るように構成する。Before fabricating a Josephson junction element on a functional polymer film, both sides of the functional polymer film are coated with a protective film to prevent swelling due to water or organic solvents.
〔産業上の利用分野）
本発明は、非常に薄い機能性高分子フィルム上のジョセ
フソン接合素子の作製方法に関する。INDUSTRIAL APPLICATION FIELD OF THE INVENTION The present invention relates to a method for making Josephson junction devices on very thin functional polymer films.
ジョセフソン接合素子は、高速、低消費電力のスイッチ
ング素子であると同時に、非常に高感度の磁気センサー
としての特性を有する。A Josephson junction device is a high-speed, low-power switching device, and at the same time has the characteristics of a highly sensitive magnetic sensor.
しかも、特にＮｂ／Ａ １０ｘ／Ｎｂ接合では、スパッ
タ法で作製するため２種々の物質を基板として、その上
に作製が可能となる。Moreover, especially in the case of Nb/A 10x/Nb junctions, since they are manufactured by sputtering, they can be formed on two different materials as substrates.
機能性高分子フィルム上にも作製が可能であるが９機能
性高分子フィルムは非常に柔らかいので容易に曲げられ
る。その為、従来のシリコン基板のような硬い基板上に
作製した場合に比べて、平坦な面取外の１例えば曲面等
にも容易に実装できる。It can also be produced on a functional polymer film, but the 9-functional polymer film is very soft and can be easily bent. Therefore, compared to the case where it is fabricated on a hard substrate such as a conventional silicon substrate, it can be easily mounted on a flat surface, such as a curved surface.
従って、特に高感度の磁気センサー（ＳＱＵＩＤ）とし
て使用すれば１人体の計測などを行うのに有効となる。Therefore, if used as a particularly highly sensitive magnetic sensor (SQUID), it will be effective for measuring a single human body.
磁気センサーは特に人体の発生する微弱な磁気を捉える
ことが可能であり９人体の測定を行うには１人体の表面
になるべく近づけて測定しなければならず１人体の表面
に沿って曲面上に磁気センサーを実装することが肝要で
あり、従って。Magnetic sensors are particularly capable of capturing the weak magnetism generated by the human body, and in order to measure the human body, they must be placed as close to the surface of the human body as possible. It is therefore vital to implement a magnetic sensor.
ジョセフソン接合を薄い機能性高分子フィルム上に形成
することが望まれている。It is desirable to form Josephson junctions on thin functional polymer films.
その際、感度をより向上させるためには、接合の寸法を
小さくする必要があり、そのためにはフィルムの寸法安
定性が重要となる。At this time, in order to further improve the sensitivity, it is necessary to reduce the bonding dimensions, and for this purpose, the dimensional stability of the film is important.
第３図、第４図は従来例の説明図である。 FIGS. 3 and 4 are explanatory diagrams of conventional examples.
図において、１６は機能性高分子フィルム、 １７はＮ
ｂ膜、１８はＡｆＯｘｌｌｌ、 ｔ９はＮｂ膜、２０は
ジョセフソン接合、 ２１は第１のレジスト、２２は第
２のレジスト、２３はＳｉＯ膜、２４は第３のレジスト
、２５は窓。In the figure, 16 is a functional polymer film, 17 is N
b film, 18 AfOxIII, t9 Nb film, 20 Josephson junction, 21 first resist, 22 second resist, 23 SiO film, 24 third resist, 25 window.
２ＧはＮｂ配線、２７は第４のレジストである。2G is an Nb wiring, and 27 is a fourth resist.
従来、薄い機能性高分子フィルム上にジョセフソン接合
を作製する場合には、第３図（ａ）に示すように、直接
９機能性高分子フィルム１６上にＮｂ／Ａ Ｉ Ｏｘ／
Ｎｂ層からなるジョセフソン接合２０を形成していた。Conventionally, when creating a Josephson junction on a thin functional polymer film, as shown in FIG. 3(a), Nb/A I Ox/
A Josephson junction 20 made of an Nb layer was formed.
第３図（ｂ）に示すように、 Ｎｂ／八ＮへＯｘ／Ｎｂ
層を堆積後、第１のレジスト２１によるパターニングを
行い９反応性イオンエツチング（ＲＩＥ）により加工を
行って、上部電極のニオブ（Ｎｂ）膜１９．バリア層の
アルミニウム酸化膜（Ａ Ｉ Ｏｘ） １８を順次エツ
チングした後、第３図（Ｃ）に示すように、第２のレジ
ストによるパターニングを行って、下部電極のＮｂ１ｌ
１７をエツチングする。次に、第３図（ｄ）に示すよう
に、酸素（Ｏｌ）雰囲気中で酸化シリコン膜（Ｓｉｎ）
２３を蒸着して絶縁膜を形成した後、第３図（ｅ）に示
すように、 ＳｉＯＭ２３上に第３のレジスト２４をマ
スクとして窓２５を開口し、第３図（ｆ）に示すように
、 Ｎｂ膜を被覆後、第４のレジスト２７をマスクとし
て、 Ｎｂ配線２６を形成して、ジョセフソン接合を得
ていた。As shown in Figure 3(b), Ox/Nb to Nb/8N
After depositing the layer, it is patterned using a first resist 21 and processed by reactive ion etching (RIE) to form a niobium (Nb) film 19 for the upper electrode. After sequentially etching the aluminum oxide film (A I Ox) 18 of the barrier layer, patterning is performed using a second resist as shown in FIG.
Etch 17. Next, as shown in FIG. 3(d), a silicon oxide film (Sin) is formed in an oxygen (Ol) atmosphere.
After forming an insulating film by vapor-depositing SiOM 23, a window 25 is opened on the SiOM 23 using the third resist 24 as a mask, as shown in FIG. 3(e), and a window 25 is opened as shown in FIG. 3(f). After coating with the Nb film, an Nb wiring 26 was formed using the fourth resist 27 as a mask to obtain a Josephson junction.
ところが、前述のように、ジョセフソン接合。 However, as mentioned above, it is a Josephson junction.
作製プロセスにおいて、特に、４回ものレジストパター
ンの形成、或いは、エツチング後のレジスト除去に、水
やアセトン、アルコール等の有機溶剤を使用することが
多い。そのために、基板となる機能性高分子フィルム自
体は、他の高分子膜に比べて、水や有機溶剤に対しては
安定で溶解したりはしないが、フィルム内に水や有機溶
剤が浸透して、フィルムが膨潤し、第４図（ａ）に示す
ように、最初平坦で寸法が正しい機能性高分子フィルム
１６が膨潤により、第４図（ｂ）或いは（Ｃ）のように
、伸びてしまい、且つ９反りが生じて。In the manufacturing process, organic solvents such as water, acetone, alcohol, etc. are often used, particularly in forming a resist pattern four times or removing the resist after etching. For this reason, the functional polymer film itself that serves as the substrate is more stable and does not dissolve in water or organic solvents than other polymer films, but water and organic solvents do not penetrate into the film. As shown in FIG. 4(a), the functional polymer film 16, which is initially flat and has the correct dimensions, expands as shown in FIG. 4(b) or (C). It got stuck and a 9-degree warpage occurred.
接合パターンの寸法安定性が低下してしまうという問題
があった。There was a problem in that the dimensional stability of the bonding pattern deteriorated.
特に、高感度の磁気センサーでは、微細な接合とパター
ン形状が必要であり９寸法安定性の劣化は大きな障害と
なる。In particular, high-sensitivity magnetic sensors require fine bonding and pattern shapes, and deterioration in dimensional stability becomes a major obstacle.
本発明は、この機能性高分子フィルムの膨潤を防止する
ことを目的として提供されるものである。The present invention is provided for the purpose of preventing this functional polymer film from swelling.
（課題を解決するための手段〕 第１図は本発明の原理説明図である。(Means for solving problems) FIG. 1 is a diagram explaining the principle of the present invention.
図において、１は機能性高分子フィルム、２は保護膜で
ある。In the figure, 1 is a functional polymer film and 2 is a protective film.
先の問題点を解決するには、フィルムが直接。To solve the above problems, the film is directly used.
プロセスを経る過程において、水や有機溶剤に直接接触
しないようにすることが肝要である。It is important to avoid direct contact with water or organic solvents during the process.
そのため、第１図に示すように、ジョセフソン接合を作
製する前に２機能性高分子フィルム１の両面に絶縁膜等
を蒸着法、スパッタ法、或いはＣＶＤ法等により堆積し
て、フィルム表面に酸化シリコン等の水や有機溶剤によ
ってフィルムが膨潤することを防ぐ為の保護膜２を形成
する。Therefore, as shown in FIG. 1, before fabricating the Josephson junction, an insulating film or the like is deposited on both sides of the bifunctional polymer film 1 by vapor deposition, sputtering, or CVD, and then the surface of the film is coated. A protective film 2 is formed to prevent the film from swelling due to water or organic solvents such as silicon oxide.
この際、保護膜２は機能性高分子フィルム１の表裏両面
に堆積することが必要であり１片面では反りが却って酷
くなる場合がある。At this time, it is necessary that the protective film 2 be deposited on both the front and back surfaces of the functional polymer film 1, and if only one surface is used, the warpage may become worse.
本発明では、保護膜を機能性高分子フィルム上の両面に
作製することによって、ジョセフソン接合の作製プロセ
スにおいて、フィルムは常に水や有機溶剤に触れること
がな（なり、従つ工、水や有機溶剤の浸透によるフィル
ムの膨潤を防ぐことが可能となった。これにより２寸法
安定性が低下−ｔｑず、微細な接合の形成においてもパ
ターンの信頼性が向上する。In the present invention, by forming protective films on both sides of the functional polymer film, the film does not always come into contact with water or organic solvents during the Josephson junction fabrication process. It has become possible to prevent the film from swelling due to the penetration of organic solvents.This prevents the two-dimensional stability from decreasing -tq and improves the reliability of the pattern even in the formation of fine junctions.
〔実施例） 第２図は本発明の一実施例の工程順模式断面図である。〔Example) FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention in the order of steps.
図において、３はポリイミドフィルム、４はＳｉＯｐ、
５はＮｂ膜、６はＡｊ！Ｏｘ膜、７はＮｂ膜、８は
ジョセフソン接合、９は第１のレジスト、１０は第２の
レジスト、１１はＳｉＯ膜、１２は第３のレジスト、１
３は開口部、１４はＮｂ配線、１５は第４のレジストで
ある。In the figure, 3 is a polyimide film, 4 is SiOp,
5 is Nb film, 6 is Aj! Ox film, 7 Nb film, 8 Josephson junction, 9 first resist, 10 second resist, 11 SiO film, 12 third resist, 1
3 is an opening, 14 is an Nb wiring, and 15 is a fourth resist.
ここでは、５０μｍの厚さのポリイミドフィルム３を基
板として、 Ｎｂ／Ａ Ｉ Ｏｘ／Ｎｂ層のジョセフソ
ン接合８を形成する一実施例について２第２図の工程順
模式断面図により説明する。Here, an example of forming a Josephson junction 8 of Nb/AI Ox/Nb layers using a polyimide film 3 with a thickness of 50 μm as a substrate will be described with reference to the schematic cross-sectional views of the process order in FIG. 2.
しかるのちに、エツチングマスクとして使用し先ず、第
２図（ａ）に示すように９機能性高分子としてのポリイ
ミドフィルム３の表面上に、酸素ガス雰囲気中で、
Ｉ Ｘｌ０−’Ｔｏｒｒの真空圧で、保護膜としてのＳ
ｉＯ膜４を３００ｎｍの厚さに蒸着する。Thereafter, using it as an etching mask, first, as shown in FIG. 2(a), on the surface of the polyimide film 3 as a 9-functional polymer, in an oxygen gas atmosphere,
At a vacuum pressure of I Xl0-'Torr, S as a protective film
An iO film 4 is deposited to a thickness of 300 nm.
続いて、フィルムの裏面にも同様な方法で、保護膜とし
てのＳｉＯ膜４を３００ｎｓ＋の厚さに蒸着する。Subsequently, a SiO film 4 as a protective film is vapor-deposited to a thickness of 300 ns+ on the back surface of the film in the same manner.
次に、ポリイミドフィルム３上に下部電極としてのＮｂ
５をアルゴン（Ａｒ）ガス圧力１０ｓｍＴｏｒｒで２０
０ｎａの厚さにスパッタ法で堆積し、続いてｉ膜をＡｒ
ガス圧力１０＋＋＋ｍＴｏｒｒで５ｎ−の厚さに堆積後
１例えば、 Ａｒに１０％０□ガスを導入して、 ０．
７Ｔｏｒｒで１時間酸化し、バリア層としてＡ Ｉ Ｏ
ｘ膜６を形成し。Next, Nb as a lower electrode is placed on the polyimide film 3.
5 at argon (Ar) gas pressure of 10 smTorr for 20
The i film was deposited by sputtering to a thickness of 0na, and then Ar
After deposition to a thickness of 5n- at a gas pressure of 10+++ mTorr, for example, by introducing 10% 0□ gas into Ar, 0.
Oxidize at 7 Torr for 1 hour and use AIO as a barrier layer.
x film 6 is formed.
更に前述と同様の方法で５上部電極としてのＮｂ膜７を
１５０１−の厚さに堆積して、 Ｎｂ／Ａ Ｉ Ｏｘ／
Ｎｂ層のジョセフソン接合８を形成する。Further, in the same manner as described above, an Nb film 7 as an upper electrode is deposited to a thickness of 1501-100 nm to form a Nb/A I Ox/
A Josephson junction 8 of the Nb layer is formed.
第２図（Ｃ）に示すように、第１のレジスト９をマスク
として上部電極のＮｂ膜７をパターニングし、余分のＮ
ｂを例えば、四弗化炭素（ＣＦ４） −５％０２ガスに
より＋ ５０ｍｒｍＴｏｒｒで５０Ｗの出力を加えて。As shown in FIG. 2(C), the Nb film 7 of the upper electrode is patterned using the first resist 9 as a mask, and excess Nb is removed.
b, for example, by carbon tetrafluoride (CF4) -5%02 gas with +50 W of power applied at 50 mrmTorr.
１？ＩＥ法により除去する。1? Remove by IE method.
続いて、第１のレジスト９を除去後、ＡｆＯｘ膜６のバ
リア層をＡｒガス中でスパッタエツチングにより除去す
る。Subsequently, after removing the first resist 9, the barrier layer of the AfOx film 6 is removed by sputter etching in Ar gas.
第２図（ｄ）に示すように、第２のレジスト１０をマス
クとして、 Ｎｂ膜５をＲＩＥ法により前述と同様の方
法でエツチングして、下部電極を形成する。As shown in FIG. 2(d), using the second resist 10 as a mask, the Nb film 5 is etched by RIE in the same manner as described above to form a lower electrode.
次に１第２図（ｅ）に示すように、酸素雰囲気中で９例
えば１ ｘ １０−’ＴｏｒｒでＳｉＯ膜１１を３５０
ｎｍの厚さに蒸着後、第２図（ｆ）に示すように、第３
のレジストをマスクとしてコンタクト用のパターンを形
成した後、 ＳｉＯ膜１１を三弗化メタン（Ｃｔｌ Ｆ
３）−２０％０！ガスで、 ＲＩＥ法により５例えば
２ＱｎｕａＴｏｒｒ。Next, as shown in FIG. 2(e), the SiO film 11 is heated to 350 m
After deposition to a thickness of nm, the third layer is deposited as shown in Figure 2(f).
After forming a contact pattern using the resist as a mask, the SiO film 11 is coated with methane trifluoride (CtlF).
3) -20%0! gas, for example 2QnuaTorr, by RIE method.
１００Ｗの出力で除去して、開口部１３を形成する。The opening 13 is formed by removing with a power of 100W.
最後に、第２図（ｇ）に示すように、 Ｎｂ配線１４を
前述と同様の方法で被膜し、第４のレジス目５をマスク
として、エツチングによりＮｂ配線１４を形成して完成
する。Finally, as shown in FIG. 2(g), the Nb wiring 14 is coated in the same manner as described above, and is completed by etching using the fourth resist pattern 5 as a mask.
以上の実施例では、１１能性高分子フィルムとして、ポ
リイミドフィルムを使用したが、他に実用できる機能性
高分子フィルムとしては、アラミドフィルム、ポリエチ
レンテレフタレートフィルム。In the above examples, a polyimide film was used as the 11-functional polymer film, but other functional polymer films that can be used include aramid film and polyethylene terephthalate film.
ポリエーテル・エーテルケトンフィルムなどがある。Examples include polyether and etherketone films.
以上説明したように２本発明によれば２機能性高分子フ
ィルムをジョセフソン接合素子の基板とした場合に、フ
ィルム上に前もって保護膜を作製しておくことで、プロ
セスにおいての、何回も使用される水や有機溶剤による
フィルムの膨潤が防止でき、フィルムの寸法安定性を向
上させることが可能となる。これにより、高分子フィル
ム上に微細なジョセフソン接合をパターンの寸法ずれも
なく作製することが可能となり、信転性の向上に寄与す
るところが大きい。As explained above, according to the present invention, when a bifunctional polymer film is used as the substrate of a Josephson junction element, by preparing a protective film on the film in advance, it is possible to reduce the number of times during the process. Swelling of the film due to the water and organic solvent used can be prevented, and the dimensional stability of the film can be improved. This makes it possible to fabricate fine Josephson junctions on a polymer film without any deviation in pattern size, which greatly contributes to improving reliability.
第１図は本発明の原理説明図。 第２図は本発明の一実施例の工程順模式断面図。 第３図、第４図は従来例の説明図である。 図において。 １は機能性高分子フィルム。 ２は保護膜、 ３はポリイミドフィルム。 ４はＳｉＯ膜、 ５はＮｂ膜。 ６はＡｌＯｘ膜、 ７はＮｂ膜。 ８はジョセフソン接合。 ９は第１のレジスト、１０は第２のレジスト。 １１はＳｉＯ膜、１２は第３のレジスト。 １３は開口部、１４はＮｂ配線。 １５は第４のレジスト 本発明の原理ｔｊｌ明図 第１図 本発明の一実施例の工程ｐ唄項戎断面図男２図 FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention in the order of steps. FIGS. 3 and 4 are explanatory diagrams of conventional examples. In fig. 1 is a functional polymer film. 2 is a protective film, 3 is a polyimide film. 4 is a SiO film, 5 is a Nb film. 6 is an AlOx film, 7 is an Nb film. 8 is a Josephson junction. 9 is a first resist, and 10 is a second resist. 11 is a SiO film, and 12 is a third resist. 13 is an opening, and 14 is Nb wiring. 15 is the fourth resist Principle of the present invention Figure 1 A cross-sectional diagram of the process of an embodiment of the present invention, Figure 2.
Claims (1)
する前に、あらかじめ、該機能性高分子フィルムの両面
に、水や有機溶剤による膨潤を防ぐ為の保護膜を被覆す
ることを特徴とするジョセフソン接合の作製方法。Before fabricating the Josephson junction device on a functional polymer film, both sides of the functional polymer film are coated with a protective film to prevent swelling due to water or organic solvents. How to make a Son junction.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014694A JPH03219680A (en) | 1990-01-24 | 1990-01-24 | Manufacture of josephson junction |
| DE69026339T DE69026339T2 (en) | 1989-11-13 | 1990-11-12 | Josephson Transition Apparatus |
| EP90312322A EP0428357B1 (en) | 1989-11-13 | 1990-11-12 | Josephson junction apparatus |
| US07/611,789 US5131976A (en) | 1989-11-13 | 1990-11-13 | Josephson junction apparatus formed on flexible polymeric film and producing method thereof |
| KR1019900018344A KR940006778B1 (en) | 1989-11-13 | 1990-11-13 | Josephson junction apparatus |
| US08/227,698 US5436471A (en) | 1989-11-13 | 1994-04-14 | Josephson junction apparatus formed on flexible polymeric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014694A JPH03219680A (en) | 1990-01-24 | 1990-01-24 | Manufacture of josephson junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03219680A true JPH03219680A (en) | 1991-09-27 |
Family
ID=11868299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014694A Pending JPH03219680A (en) | 1989-11-13 | 1990-01-24 | Manufacture of josephson junction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03219680A (en) |
-
1990
- 1990-01-24 JP JP2014694A patent/JPH03219680A/en active Pending
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