JPH03201498A - Metal board interconnection - Google Patents
Metal board interconnectionInfo
- Publication number
- JPH03201498A JPH03201498A JP33875689A JP33875689A JPH03201498A JP H03201498 A JPH03201498 A JP H03201498A JP 33875689 A JP33875689 A JP 33875689A JP 33875689 A JP33875689 A JP 33875689A JP H03201498 A JPH03201498 A JP H03201498A
- Authority
- JP
- Japan
- Prior art keywords
- wiring pattern
- metal plate
- insulating layer
- metal
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 110
- 239000002184 metal Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 48
- 239000011229 interlayer Substances 0.000 claims description 47
- 239000010410 layer Substances 0.000 claims description 33
- 238000003825 pressing Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、各種電子機器に利用されている金属基板にお
ける配線パターンと、そのベース材である金属板とを接
続する金属基板の層間接続方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to an interlayer connection method of a metal substrate that connects a wiring pattern on a metal substrate used in various electronic devices and a metal plate that is a base material thereof. Regarding.
（従来の技術）
第７図は従来の金属基板における配線パターンと金属板
との接続（以下、層間接続と呼ぶ）の構成の一例を示す
断面図であり、１は金属基板であり、アルミニウム板、
鉄板、ステンレス板などよりなる金属板１−１と、金属
板１−１の表面に形成された樹脂などよりなる絶縁層１
−２と、絶縁層１−２上に積層された銅箔をエツチング
するなどの方法によって形成された配線パターン１−３
とによって構成されている。２は金属板１−１上に設け
られためねじであり、このめねじ２には頭部を有するお
ねじ３が螺入されている。おねし３の頭部は配線パター
ン１−３に半田づけ４されており、さらにおねじ３の先
端部は樹脂などによって封止または半田づけ５され、め
ねじ２とおねじ３の噛合い部に湿気、ガスなどが浸入し
て接続が不確実になるのを防いで、おねじ３と金属板１
−１とを接続している。(Prior Art) FIG. 7 is a cross-sectional view showing an example of the configuration of a connection between a wiring pattern and a metal plate (hereinafter referred to as an interlayer connection) in a conventional metal substrate. ,
A metal plate 1-1 made of an iron plate, a stainless steel plate, etc., and an insulating layer 1 made of a resin etc. formed on the surface of the metal plate 1-1.
-2, and a wiring pattern 1-3 formed by etching the copper foil laminated on the insulating layer 1-2.
It is composed of. 2 is a female screw provided on the metal plate 1-1, and a male screw 3 having a head is screwed into this female screw 2. The head of the male thread 3 is soldered 4 to the wiring pattern 1-3, and the tip of the male thread 3 is sealed or soldered 5 with resin or the like, and the meshing part between the female thread 2 and the male thread 3 is To prevent moisture, gas, etc. from entering into the
-1 is connected.
第８図（ａ）、 （ｂ）は層間接続の他の従来例であり
、第８図（ａ）において、６は金属板１−１に設けられ
た座ぐり部、７は金線、アルミニウム線などよりなるボ
ンディングワイヤーで、金属板１−１と配線パターン■
−３との間をワイヤーボンディング方式によって接続し
ている。第８図（ｂ）において、８はエツチング法など
によって絶縁層１−２に設けられた開孔部で、ボンディ
ングワイヤー７によって金属板Ｌ−１と配線パターン１
−３との間をワイヤーボンディング方式によって接続し
ている。FIGS. 8(a) and 8(b) show other conventional examples of interlayer connections. In FIG. 8(a), 6 is a counterbore provided in the metal plate 1-1, 7 is a gold wire, aluminum Connect the metal plate 1-1 and the wiring pattern with a bonding wire made of wire etc.
-3 is connected by wire bonding method. In FIG. 8(b), reference numeral 8 denotes an opening provided in the insulating layer 1-2 by etching or the like, and a bonding wire 7 connects the metal plate L-1 to the wiring pattern 1.
-3 is connected by wire bonding method.
（発明が解決しようとする課題）
このように、従来の方法によっても金属基板の層間接続
を行なうことができる。しかしながら上記の従来の方法
においては下記のような問題があった・
まず、第７図に示した方法においては、層間接続をさせ
るために広い基板面積を必要とし、高密度実装の用途に
は不適当であること、金属板１−１の厚さが薄い場合に
は、めねじ２を形成するのが困難になること、金属板１
−１とおねじ３の接続は半田づけ５をしない場合には接
触接続であるため接続が不確実になりやすいこと、及び
金属板１−１へのめねじ２の形成、おねじ３の螺入、お
ねじ３の頭部と配線パターン１−３との半田づけ４．お
ねじ３先端部の樹脂封止、または半田づけ５を必要とす
るので加工工数が多くなって接続コストが高くなるなど
の問題があった。(Problems to be Solved by the Invention) As described above, interlayer connections between metal substrates can be performed also by the conventional method. However, the above conventional methods had the following problems. First, the method shown in Figure 7 requires a large board area to make interlayer connections, which is unsuitable for high-density packaging applications. If the thickness of the metal plate 1-1 is thin, it will be difficult to form the female thread 2.
-1 and the male thread 3 are contact connections if soldering 5 is not used, so the connection is likely to be unstable, and the formation of the female thread 2 and the screwing of the male thread 3 into the metal plate 1-1. , Soldering the head of the male screw 3 and the wiring pattern 1-3 4. Since resin sealing of the tip of the male screw 3 or soldering 5 is required, there are problems such as an increase in the number of processing steps and a high connection cost.
次に、第８図（ａ）に示した方法においては、層間接続
に必要な基板面積は第７図に示した方法よりも小さくな
るが、確実な接続方法を得るためには配線パターン１−
３のワイヤーボンド箇所、及び金属板１−１の材質によ
っては、座ぐり部６の面に金メツキを施す必要がありコ
スト高になること、ボンディングワイヤー７に外力が加
わると、容易にボンディングワイヤー７が断線すること
、及び座ぐり加工を必要とするのでコスト高となるとと
もに、金属板１−１の厚さが薄い場合には座ぐり加工が
困難となって実施できなくなるなどの問題があった。Next, in the method shown in FIG. 8(a), the substrate area required for interlayer connection is smaller than in the method shown in FIG. 7, but in order to obtain a reliable connection method, the wiring pattern 1-
Depending on the wire bonding location 3 and the material of the metal plate 1-1, it may be necessary to apply gold plating to the surface of the counterbore 6, which increases the cost.If an external force is applied to the bonding wire 7, the bonding wire may easily There are problems such as disconnection of the metal plate 7 and the need for counterboring, which increases costs, and if the thickness of the metal plate 1-1 is thin, counterboring becomes difficult and cannot be carried out. Ta.
第８図（ｂ）に示した方法によれば座ぐり加工は不要と
なり、薄い金属板でもボンディング接続が可能であるが
、絶縁層１−２の部分的なエツチング除去のためには複
雑な処理を必要とし、第８図（ａ）における問題点に加
えてさらに接続コストが高くなるという問題がある。According to the method shown in FIG. 8(b), spot boring is not required and bonding connection is possible even with a thin metal plate, but complicated processing is required to partially remove the insulating layer 1-2. In addition to the problem in FIG. 8(a), there is a problem in that the connection cost becomes higher.
金屈基板工は、その構造上、絶縁層１−２をはさんで、
片側の配線パターン１−３を、反対側に導電性の金属板
１−１を有しているので配線パターン１−３と金属板１
−１とを任意の箇所で簡単に、かつ微細に接続できれば
、金属板１−１を、単にケース、シールド、放熱板など
として利用するのみでなく、電源回路、グランド回路な
どの全回路に共通の回路構成用の導体としても活用する
ことができ、あたかも両面スルーホール基板のような使
い方をすることが可能となる。Due to its structure, the Kinkutsu substrate process has an insulating layer 1-2 in between,
Since it has wiring pattern 1-3 on one side and conductive metal plate 1-1 on the other side, wiring pattern 1-3 and metal plate 1
If the metal plate 1-1 can be easily and finely connected at any location, the metal plate 1-1 can be used not only as a case, shield, heat sink, etc., but also for all circuits such as power supply circuits and ground circuits. It can also be used as a conductor for circuit configurations, making it possible to use it as if it were a double-sided through-hole board.
本発明の目的は、金属基板上の任意の箇所で、金属板の
厚さに関係なく、微細な基板面積内で、確実かつ簡単に
、低コストで層間接続することができる金属基板の層間
接続方法を提供することにある。An object of the present invention is to provide an interlayer connection for a metal substrate that can be performed reliably, easily, and at low cost at any location on the metal substrate, regardless of the thickness of the metal plate, and within a minute board area. The purpose is to provide a method.
（課題を解決するための手段）
上記の目的を遠戚するため、本発明は、金属板上に絶縁
層を設け、この絶縁層上に配線パターンを形成してなる
金属基板を、前記金属板を下側にして加工台に載置し、
平担状または半球状の先端部を有する接続用工具の先端
で前記配線パターンの層間接続すべき箇所の表面から前
記金属基板を加圧し、前記絶縁層を破るようにして層間
接続することを特徴とし、また金属板上に絶縁層を設け
、この絶縁層上に配線パターンを形成してなる金属基板
を、前記配線パターンを下側にして加工台上に載置し、
平担状または半球状の先端部を有する接続用工具の先端
で前記金属板の層間接続すべき箇所の表面から前記金属
基板を加圧し、前記絶縁層を破るようにして層間接続す
ることを特徴とし、また金属板上に絶縁層を設け、この
絶縁層上に配線パターンを形成してなる金属基板に対し
て、層間接続すべき箇所の金属板側の表面と配線パター
ン側の表面とから同時に同軸上で平担状または半球状の
先端部を有する接続用工具の先端で加圧し、前記絶縁層
を破るようにして層間接続することを特徴とする。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a metal substrate in which an insulating layer is provided on a metal plate and a wiring pattern is formed on the insulating layer. Place it on the processing table with it facing down.
The metal substrate is pressurized from the surface of the portion of the wiring pattern where the interlayer connection is to be made using the tip of a connection tool having a flat or hemispherical tip, and the interlayer connection is made by breaking the insulating layer. and placing an insulating layer on a metal plate and a metal substrate with a wiring pattern formed on the insulating layer on a processing table with the wiring pattern facing down,
The metal substrate is pressurized from the surface of the portion of the metal plate where the interlayer connection is to be made with the tip of a connection tool having a flat or hemispherical tip, and the interlayer connection is made by breaking the insulating layer. In addition, an insulating layer is provided on a metal plate, and a wiring pattern is formed on this insulating layer to form a metal substrate. At the same time, from the surface of the metal plate and the surface of the wiring pattern where interlayer connections are to be made, The method is characterized in that the interlayer connection is made by applying pressure with the tip of a coaxial connection tool having a flat or hemispherical tip to break the insulating layer.
（作 用）
」二記の手段を採用したため、配線パターンまたは金属
板または両者が接続用工具の先端によって局部的に押圧
されて凹みを生じ、この凹みによって絶縁層が破れて、
配線パターンと金属板とが直接接触することになり、加
圧力によって両者が冷間圧接され、層間接続がなされる
。(Function) Because the method described in section 2 was adopted, the wiring pattern or the metal plate, or both, would be locally pressed by the tip of the connection tool, creating a dent, and the insulating layer would be torn due to this dent.
The wiring pattern and the metal plate come into direct contact, and the pressure welds them together by cold pressure, creating an interlayer connection.
（実施例） 以下、本発明の実施例を図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the drawings.
第１図（ａ）〜（ｄ）は本発明の金属基板の層間接続方
法の第１実施例における加工工程を示す断面図であり、
１は金属基板であり、金属板１−１．絶縁層１−２．配
線パターン１−３は第７図に示した従来例と全く同様の
材料、方法によって構成されている。FIGS. 1(a) to 1(d) are cross-sectional views showing processing steps in a first embodiment of the interlayer connection method for metal substrates of the present invention,
1 is a metal substrate; metal plates 1-1. Insulating layer 1-2. The wiring pattern 1-3 is constructed using the same materials and methods as those of the conventional example shown in FIG.
９は接続用工具であって、例えば鋼、超硬合金などで製
作されており、その先端は半球状に形成されている。１
０は鋼などの加工台、１１は配線パターン１−３と金属
板１−１との接合部である。Reference numeral 9 denotes a connecting tool, which is made of, for example, steel or cemented carbide, and has a hemispherical tip. 1
0 is a processing table made of steel or the like, and 11 is a joint between the wiring pattern 1-3 and the metal plate 1-1.
次に上記の第１実施例の動作について説明する。Next, the operation of the first embodiment described above will be explained.
第１図（ａ）は準備状態を示しており、金属基抜工を金
属板１−１を下側にして加工台１０の上に載置し、接続
用工具９を層間接続すべき箇所の配線パターン１−３の
上方に配置する。続いて接続用工具９を下方に移動させ
て第工図（ｂ）に示すように接続用工具９の先端を金属
基板１内に加圧圧入せしめる。さらに接続用工具９を下
方に移動させると第１図（ｃ）に示すように、延性にと
ぼしい絶縁層１−２は加圧箇所で破れるが、延性のすぐ
れた配線パターン１−３は破れることなく、配線パター
ン１−３と金属板１−１とが直接接触し、加圧力によっ
て両者が接合部１１において冷間圧接されて接合して層
間接続される。第１図（ｄ）は層間接続完了の状態であ
る。FIG. 1(a) shows the preparation state, in which the metal base extractor is placed on the processing table 10 with the metal plate 1-1 facing downward, and the connection tool 9 is placed at the location where the interlayer connection is to be made. It is placed above the wiring pattern 1-3. Subsequently, the connecting tool 9 is moved downward, and the tip of the connecting tool 9 is press-fitted into the metal substrate 1 as shown in the drawing (b). When the connection tool 9 is further moved downward, as shown in FIG. 1(c), the insulating layer 1-2, which has low ductility, is torn at the pressurized area, but the wiring pattern 1-3, which is highly ductile, is not torn. Instead, the wiring pattern 1-3 and the metal plate 1-1 are in direct contact with each other, and the two are cold-welded and joined at the joint portion 11 by applying pressure, thereby forming an interlayer connection. FIG. 1(d) shows a state in which the interlayer connection is completed.
第１図（ａ）〜（ｄ）に示した方法では、配線パターン
１３の厚さが薄かったり、絶縁層１−２の厚さが厚い場
合には、配線パターンｌ−３が金属板１−１に確実に接
触せず、層間接続が不完全になることがある。In the method shown in FIGS. 1(a) to (d), when the wiring pattern 13 is thin or the insulating layer 1-2 is thick, the wiring pattern l-3 is 1, and the interlayer connection may be incomplete.
このような場合には第２図（ａ）〜（ｄ）に示した本発
明の第２実施例による層間接続方法が有効である。In such a case, the interlayer connection method according to the second embodiment of the present invention shown in FIGS. 2(a) to 2(d) is effective.
第２図（ａ）〜（ｄ）において、金属基板１．接続用工
具９．加工台１０は第工図の場合と全く同様のものであ
り、１１が接合部である。In FIGS. 2(a) to 2(d), metal substrate 1. Connection tool 9. The processing table 10 is exactly the same as that shown in the first drawing, and 11 is the joint.
次に上記の第２実施例に動作について説明する。Next, the operation of the second embodiment will be explained.
第２図（ａ）は準備状態を示しており、金属基板ｌを配
線パターン１−３側を下側にして加工台１０の上に載置
し、接続用工具９を層間接続すべき箇所の金属板１−１
の上方に配置する。次に第２図（ｂ）、 （Ｃ）に示す
ように、第工図（ｂ）、 （ｃ）に示した彫工実施例と
同様にして接合部１１を得て層間接続させるが、この第
２実施例においては、金属板１−１の厚さが絶縁層１−
２．配線パターン１−３の厚さに比して充分に厚く、絶
縁層１−２の厚さが多少厚くても、また配線パターン１
−３の厚さが多少薄くても、常に確実に金属板１−１と
配線パターン１−３とが接触し、完全な層間接続を得る
ことができる。第２図（ｄ）は層間接続完了の状態であ
る。FIG. 2(a) shows the preparation state, in which the metal substrate l is placed on the processing table 10 with the wiring pattern 1-3 side facing down, and the connection tool 9 is placed at the location where the interlayer connection is to be made. Metal plate 1-1
Place it above. Next, as shown in FIGS. 2(b) and 2(C), a joint 11 is obtained and interlayer connection is made in the same manner as in the carving example shown in FIGS. 2(b) and 2(c). In the second embodiment, the thickness of the metal plate 1-1 is the same as that of the insulating layer 1-1.
2. It is sufficiently thick compared to the thickness of wiring pattern 1-3, and even if the thickness of insulating layer 1-2 is somewhat thicker, wiring pattern 1
Even if the thickness of the metal plate 1-3 is somewhat thin, the metal plate 1-1 and the wiring pattern 1-3 always come into contact with each other reliably, and a perfect interlayer connection can be obtained. FIG. 2(d) shows a state in which the interlayer connection is completed.
第３図（ａ）〜（ｄ）は本発明の第３実施例の加工工程
を示す断面図であり、金属基板１．接続用工具９は第１
図（ａ）〜（ｄ）に示した第１実施例と同様の方法のも
のであるが、加工台１０には鋼などの半球状の頭部を有
する一方の接続用工具となる突起１２を設けである。１
■は配線パターン１−３と金属板１−１との接合部であ
る。3(a) to 3(d) are cross-sectional views showing the processing steps of the third embodiment of the present invention, in which the metal substrate 1. The connection tool 9 is the first
The method is similar to that of the first embodiment shown in FIGS. (a) to (d), but the processing table 10 has a protrusion 12 made of steel or the like having a hemispherical head and serving as one of the connecting tools. It is a provision. 1
2 is a joint between the wiring pattern 1-3 and the metal plate 1-1.
次に上記の第３実施例の動作について説明する。Next, the operation of the third embodiment described above will be explained.
第３図（ａ）は準備状態を示しており、金属基板ｌを、
金属板１−１を下側にして層間接続すべき箇所に突起１
２の先端が合致するように、突起１２の上に載置し、接
続用工具９の層間接続すべき箇所の配線パターン１−３
の上方、すなわち突起１２と同軸上に載置する。なお、
この場合１図示はしないが、配線パターン１−３を下側
にして載置しても全く同様の効果が得られる。続いて接
続用工具９を下方に移動させると第３図（ｂ）に示すよ
うに接続用工具９の先端と突起１２の先端とが同時に金
属基板１内に加圧圧入される。さらに接続用工具９を下
方に移動させると第３図（Ｃ）に示すように、延性にと
ぼしい絶縁層１〜２は加圧箇所で破れるが、延性のすぐ
れた配線パターン１−３と金属板１−１とは破れること
なく、配線パターン１−３と金属板１−１とが直接接触
し、加圧力によって両者が接合部１１において冷間圧接
されて接合し、層間接続される。第３図（ｄ）は層間接
続完了の状態である。FIG. 3(a) shows the preparation state, in which the metal substrate l is
With the metal plate 1-1 facing down, place the protrusion 1 at the location where the interlayer connection is to be made.
Place the wiring pattern 1-3 on the protrusion 12 so that the tips of the wiring patterns 1-3 and 2 match, and place the wiring pattern 1-3 on the connection tool 9 at the location where the interlayer connection is to be made.
It is placed above the protrusion 12, that is, coaxially with the protrusion 12. In addition,
In this case, although not shown, the same effect can be obtained even if the wiring pattern 1-3 is placed on the lower side. Subsequently, when the connecting tool 9 is moved downward, the tip of the connecting tool 9 and the tip of the protrusion 12 are press-fitted into the metal substrate 1 at the same time, as shown in FIG. 3(b). When the connection tool 9 is further moved downward, as shown in FIG. 3(C), the insulating layers 1-2, which have low ductility, are torn at the pressure points, but the wiring pattern 1-3, which has high ductility, and the metal plate are broken. The wiring pattern 1-3 and the metal plate 1-1 are in direct contact with each other without being torn from the metal plate 1-1, and the two are cold-welded and bonded at the joint portion 11 by pressure, resulting in an interlayer connection. FIG. 3(d) shows a state in which the interlayer connection is completed.
また第３図（ａ）〜（ｄ）では、接続用工具９のみを移
動させる例を示したが、接続用工具９と突起１２とを同
時に移動させても同様の効果が得られる。Further, although FIGS. 3(a) to 3(d) show an example in which only the connecting tool 9 is moved, the same effect can be obtained even if the connecting tool 9 and the protrusion 12 are moved simultaneously.
上記の第１．第２実施例においては加圧を金属基板１の
片側のみから行なうので、層間接続後。No. 1 above. In the second embodiment, since pressure is applied only from one side of the metal substrate 1, after the interlayer connection.
金属基板１に「そり」が発生しやすいが、この第３の実
施例では金属基板１の両側から均等に加圧するので「そ
り」の発生がない。Although "warping" is likely to occur in the metal substrate 1, in this third embodiment, since pressure is applied evenly from both sides of the metal substrate 1, "warping" does not occur.
上記の各実施例では、半球状の先端部を有する接続用工
具９を使用した場合を示したが、例えば第４図に示すよ
うに先端部を平担状に成形した接続用工具１３を使用し
ても上記の各実施例と同様の工程を経て層間接続させる
ことが可能であり、第５図、第６図は、それぞれ第１実
施例と第２実施例の層間接続方法による場合の層間接続
完了の状態を示している。In each of the above embodiments, the connection tool 9 having a hemispherical tip is used, but for example, as shown in FIG. 4, a connection tool 13 having a flat tip is used. However, it is possible to connect the layers through the same steps as in each of the above embodiments, and FIGS. Indicates that the connection is complete.
上記の実施例では、下記に示すように効果を奏する。The above embodiment has the following effects.
（１）平担状または半球状の先端部を有する接続用工具
９，１３の先端で、層間接続すべき箇所の金属基板１の
表面から加圧するようにしたので、簡単な装置でｔ回の
動作によって、任意の箇所を金属基板ｌの厚さに関係な
く、低コストで層間接続することができる。(1) Pressure is applied from the surface of the metal substrate 1 at the location where interlayer connection is to be made using the tips of the connection tools 9 and 13 having flat or hemispherical tips, so a simple device can be used t times. Through this operation, interlayer connections can be made at any location at low cost, regardless of the thickness of the metal substrate l.
（２）配線パターン１−３と金属板１−１との接合は、
冷間圧接によってなされるので接続の信頼性が高い。(2) The connection between the wiring pattern 1-3 and the metal plate 1-1 is as follows:
The connection is highly reliable because it is made by cold pressure welding.
（３）層間接続をするために必要な金属基板１の面積は
、−殻内なスルーホール基板のスルーホール径程度でよ
く、高密度実装が可能である。(3) The area of the metal substrate 1 required for interlayer connection is approximately the diameter of the through-holes in the through-hole substrate, allowing high-density mounting.
（４）金属板１−１を電源回路、グランド回路などの全
回路に共通の回路構成用の導体として活用することが可
能となり、片面基板であっても両面スルーホール基板に
匹敵する布線処理能力を発揮し、高密度実装が可能とな
る。特に、金属板１−１をグランド回路とした場合には
、グランドインピーダンスを著しく低く保つことが可能
となり、動作の安定した特性のすぐれた電気回路を提供
することができる。(4) Metal plate 1-1 can be used as a conductor for circuit configurations common to all circuits such as power supply circuits and ground circuits, and even a single-sided board has wiring processing comparable to a double-sided through-hole board. This enables high-density packaging. In particular, when the metal plate 1-1 is used as a ground circuit, the ground impedance can be kept extremely low, and an electric circuit with stable operation and excellent characteristics can be provided.
（５）配線パターン１−３側または金属板１−１側のど
ちらからでも加圧接続することができるので、金属基板
上の厚さや部品の搭載状況、構造などに応じて加圧方向
を自由に選択することができる。(5) Since pressure can be connected from either the wiring pattern 1-3 side or the metal plate 1-1 side, the direction of pressure can be freely selected depending on the thickness of the metal board, the mounting status of components, the structure, etc. can be selected.
（６）金属基板１の両側から同軸上で同時に加圧する第
３実施例の方法によれば、加圧による金属基板１の「そ
り」を防止することができる。(6) According to the method of the third embodiment in which pressure is applied simultaneously from both sides of the metal substrate 1 on the same axis, it is possible to prevent "warping" of the metal substrate 1 due to pressure application.
（発明の効果）
本発明によれば、接続用工具によって金属基板を加圧す
ることによって層間接続がなされるため、金属基板上の
任意の箇所で、しかも金属板の厚さに関係なく、微少な
基板面積内で、確実かつ簡単に、低コストで層間接続で
きる金属基板の層間接続方法を提供できる。(Effects of the Invention) According to the present invention, interlayer connections are made by applying pressure to the metal substrate with a connection tool, so minute connections can be made at any location on the metal substrate, regardless of the thickness of the metal plate. It is possible to provide an interlayer connection method for metal substrates that allows interlayer connection to be performed reliably, easily, and at low cost within the board area.
第工図（ａ）〜（ｄ）は本発明の金属基板の層間接続方
法の第１実施例における加工工程を示す断面図、第２図
（ａ）〜（ｄ）は本発明の第２実施例における加工工程
を示す断面図、第３図（ａ）〜（ｄ）は本発明の第３実
施例における加工工程を示す断面図、第４図は接続用工
具の他の例を示す正面図、第５図。
第６図は第４図の接続用工具を用いた場合の層間接続完
了の状態を示す金属基板の断面図、第７図。
第８図（ａ）、、 （ｂ）は従来の金属基板の層間接続
構成を示す金属基板の断面図である。
１・・・金属基板、 １−１・・・金属板、 １−２・
・・絶縁周、
１−３・・配線パターン、
９．１３・・・
接続用工具、
１０・・・加工台、
１１・・・接合部、
１２・・・加工台の突起。The construction drawings (a) to (d) are cross-sectional views showing the processing steps in the first embodiment of the interlayer connection method for metal substrates of the present invention, and FIG. 3(a) to 3(d) are sectional views showing the processing steps in the third embodiment of the present invention, and FIG. 4 is a front view showing another example of the connection tool. , FIG. 6 is a sectional view of a metal substrate showing a state in which interlayer connection is completed when the connection tool of FIG. 4 is used, and FIG. 7 is a sectional view of the metal substrate. FIGS. 8(a) and 8(b) are cross-sectional views of a metal substrate showing the interlayer connection structure of a conventional metal substrate. 1... Metal substrate, 1-1... Metal plate, 1-2.
... Insulation circumference, 1-3... Wiring pattern, 9.13... Connection tool, 10... Processing table, 11... Joint portion, 12... Protrusion of processing table.
Claims (3)
パターンを形成してなる金属基板を、前記金属板を下側
にして加工台上に載置し、平担状または半球状の先端部
を有する接続用工具の先端で前記配線パターンの層間接
続すべき箇所の表面から前記金属基板を加圧し、前記絶
縁層を破るようにして層間接続することを特徴とする金
属基板の層間接続方法。(1) A metal substrate formed by providing an insulating layer on a metal plate and forming a wiring pattern on this insulating layer is placed on a processing table with the metal plate facing down, and is shaped into a flat or hemispherical shape. An interlayer connection between layers of a metal substrate, characterized in that the metal substrate is pressurized from the surface of the portion of the wiring pattern where the interlayer connection is to be made with the tip of a connection tool having a tip end of the wiring pattern, and the interlayer connection is made by breaking the insulating layer. Connection method.
パターンを形成してなる金属基板を、前記配線パターン
を下側にして加工台上に載置し、平担状または半球状の
先端部を有する接続用工具の先端で前記金属板の層間接
続すべき箇所の表面から前記金属基板を加圧し、前記絶
縁層を破るようにして層間接続することを特徴とする金
属基板の層間接続方法。(2) A metal substrate formed by providing an insulating layer on a metal plate and forming a wiring pattern on this insulating layer is placed on a processing table with the wiring pattern facing down, and is shaped into a flat or hemispherical shape. An interlayer connection between layers of a metal substrate, characterized in that the metal substrate is pressurized from the surface of a portion of the metal plate where the interlayer connection is to be made with the tip of a connection tool having a tip end portion of the metal substrate, and the interlayer connection is made by breaking the insulating layer. Connection method.
パターンを形成してなる金属基板に対して、層間接続す
べき箇所の金属板側の表面と配線パターン側の表面とか
ら同時に同軸上で平担状または半球状の先端部を有する
接続用工具の先端で加圧し、前記絶縁層を破るようにし
て層間接続することを特徴とする金属基板の層間接続方
法。(3) For a metal substrate formed by providing an insulating layer on a metal plate and forming a wiring pattern on this insulating layer, simultaneously connect the surface of the metal plate side and the surface of the wiring pattern side of the location where interlayer connection is to be made. A method for interlayer connection of metal substrates, characterized in that the interlayer connection is made by applying pressure with the tip of a coaxial connection tool having a flat or hemispherical tip to break the insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1338756A JP2640780B2 (en) | 1989-12-28 | 1989-12-28 | Interlayer connection method for metal substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1338756A JP2640780B2 (en) | 1989-12-28 | 1989-12-28 | Interlayer connection method for metal substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03201498A true JPH03201498A (en) | 1991-09-03 |
| JP2640780B2 JP2640780B2 (en) | 1997-08-13 |
Family
ID=18321162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1338756A Expired - Fee Related JP2640780B2 (en) | 1989-12-28 | 1989-12-28 | Interlayer connection method for metal substrates |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2640780B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0686441A1 (en) * | 1993-12-27 | 1995-12-13 | Sanyo Machine Works, Ltd. | Structure for and method of joining metal plate materials |
| DE19522338A1 (en) * | 1995-06-20 | 1997-01-02 | Fraunhofer Ges Forschung | Deformable substrate through-contact production method for chip carrier |
| US6085414A (en) * | 1996-08-15 | 2000-07-11 | Packard Hughes Interconnect Company | Method of making a flexible circuit with raised features protruding from two surfaces and products therefrom |
| EP1019986A1 (en) * | 1997-10-07 | 2000-07-19 | Dimensional Circuits Corp. | Wiring board constructions and methods of making same |
| EP1335452A2 (en) * | 2002-02-08 | 2003-08-13 | W.C. Heraeus GmbH & Co. KG | Device for bonding two metal structures |
| US7205483B2 (en) | 2004-03-19 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Flexible substrate having interlaminar junctions, and process for producing the same |
| JP2007110010A (en) * | 2005-10-17 | 2007-04-26 | Shindo Denshi Kogyo Kk | Flexible printed wiring board, flexible printed circuit board, and their manufacturing method |
| WO2008065972A1 (en) * | 2006-11-27 | 2008-06-05 | Shinano Kenshi Kabushiki Kaisha | Board-mounted brushless motor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4927899A (en) * | 1972-07-10 | 1974-03-12 | ||
| JPH01110495U (en) * | 1988-01-19 | 1989-07-26 |
-
1989
- 1989-12-28 JP JP1338756A patent/JP2640780B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4927899A (en) * | 1972-07-10 | 1974-03-12 | ||
| JPH01110495U (en) * | 1988-01-19 | 1989-07-26 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5798185A (en) * | 1993-12-27 | 1998-08-25 | Sanyo Machine Works, Ltd. | Joined structure and joining method of metal plates |
| EP0686441A4 (en) * | 1993-12-27 | 1996-05-15 | Sanyo Machine Works | Structure for and method of joining metal plate materials |
| EP0686441A1 (en) * | 1993-12-27 | 1995-12-13 | Sanyo Machine Works, Ltd. | Structure for and method of joining metal plate materials |
| DE19522338B4 (en) * | 1995-06-20 | 2006-12-07 | Pac Tech-Packaging Technologies Gmbh | Chip carrier assembly with a via |
| DE19522338A1 (en) * | 1995-06-20 | 1997-01-02 | Fraunhofer Ges Forschung | Deformable substrate through-contact production method for chip carrier |
| US6085414A (en) * | 1996-08-15 | 2000-07-11 | Packard Hughes Interconnect Company | Method of making a flexible circuit with raised features protruding from two surfaces and products therefrom |
| EP1019986A1 (en) * | 1997-10-07 | 2000-07-19 | Dimensional Circuits Corp. | Wiring board constructions and methods of making same |
| US6460247B1 (en) * | 1997-10-07 | 2002-10-08 | Dimensional Circuits Corp. | Wiring board constructions and methods of making same |
| EP1019986A4 (en) * | 1997-10-07 | 2003-03-26 | Dimensional Circuits Corp | Wiring board constructions and methods of making same |
| EP1335452A2 (en) * | 2002-02-08 | 2003-08-13 | W.C. Heraeus GmbH & Co. KG | Device for bonding two metal structures |
| EP1335452A3 (en) * | 2002-02-08 | 2007-05-02 | W.C. Heraeus GmbH | Device for bonding two metal structures |
| US7205483B2 (en) | 2004-03-19 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Flexible substrate having interlaminar junctions, and process for producing the same |
| US7531754B2 (en) | 2004-03-19 | 2009-05-12 | Panasonic Corporation | Flexible substrate having interlaminar junctions, and process for producing the same |
| JP2007110010A (en) * | 2005-10-17 | 2007-04-26 | Shindo Denshi Kogyo Kk | Flexible printed wiring board, flexible printed circuit board, and their manufacturing method |
| WO2008065972A1 (en) * | 2006-11-27 | 2008-06-05 | Shinano Kenshi Kabushiki Kaisha | Board-mounted brushless motor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2640780B2 (en) | 1997-08-13 |
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