JPH03114289A - Aluminum nitride substrate having copper circuit - Google Patents
Aluminum nitride substrate having copper circuitInfo
- Publication number
- JPH03114289A JPH03114289A JP1250484A JP25048489A JPH03114289A JP H03114289 A JPH03114289 A JP H03114289A JP 1250484 A JP1250484 A JP 1250484A JP 25048489 A JP25048489 A JP 25048489A JP H03114289 A JPH03114289 A JP H03114289A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- copper plate
- nitride substrate
- aluminum nitride
- oxygen content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000010949 copper Substances 0.000 title claims abstract description 72
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 11
- 239000011812 mixed powder Substances 0.000 abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005219 brazing Methods 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- -1 titanium hydride Chemical compound 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、パワー半導体モジュール基板等に用いられる
銅回路を有する窒化アルミニウム基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an aluminum nitride substrate having a copper circuit used for power semiconductor module substrates and the like.
従来より、窒化アルミニウム基板と銅板を接合する方法
としては、以下が提案されている。Conventionally, the following methods have been proposed for bonding an aluminum nitride substrate and a copper plate.
（ｉ）表面を酸化した窒化アルミニウム基板に銅板を接
触配置し、銅の融点以下、ＣｕｚＯ−０の共晶温度以上
で加熱して接合するいわゆるＤＢＣ法（例えば特開昭５
９−１２１１７５号公報）。(i) The so-called DBC method (for example, Japanese Patent Application Laid-Open No. 5-11111
9-121175).
（ｉｉ ）窒化アルミニウム基板と銅板の間にＡｇ箔、
Ｃｕ箔さらには活性金属箔を順次積層し加熱して接合す
る方法（例えば特開昭５６−１６３０９３号公報）。(ii) Ag foil between the aluminum nitride substrate and the copper plate;
A method in which Cu foil and further active metal foil are sequentially laminated and bonded by heating (for example, JP-A-56-163093).
（ｉｉｉ ）前記金属の合金板を介在させ加熱接合する
方法（例えば特開昭５８−１４０３８１号公報）。(iii) A method of heating and bonding with an alloy plate of the metals interposed therebetween (for example, Japanese Patent Application Laid-open No. 140381/1981).
（ｉｖ ）前記金属からなる合金粉末を介在させ加熱接
合する方法（例えば特開昭５６−１６３０９３号公報）
。(iv) A method of heating and bonding using an alloy powder made of the metal (for example, Japanese Patent Application Laid-open No. 163093/1983)
.
（Ｖ）銀粉、銅粉及び活性金属もしくは活性金属を含む
化合物粉からなる混合粉末をペースト化し、窒化アルミ
ニウム基板上に塗布後、銅板を配置し、加熱接合する方
法。(V) A method in which a mixed powder consisting of silver powder, copper powder, and active metal or active metal-containing compound powder is made into a paste, coated on an aluminum nitride substrate, a copper plate is placed, and heat bonded.
これらの方法のうち、（ｉｉ）〜（Ｖ）の方法は、銅板
と窒化アルミニウム基板の間に、八ｇ、 Ｃｕ及び活性
金属からなる成分を介在−させ接合体を構成するもので
あり、とくに（Ｖ）の方法は、特別に箔や、合金板、合
金粉末等を用いずに筒便に接合層を形成できることや、
スクリーン印刷法にて容易に回路パターン状に接合層を
形成できる点で有利な方法である。Among these methods, methods (ii) to (V) construct a bonded body by interposing a component consisting of 8g, Cu, and an active metal between a copper plate and an aluminum nitride substrate. Method (V) is capable of forming a bonding layer on the tube without using special foil, alloy plate, alloy powder, etc.
This method is advantageous in that the bonding layer can be easily formed in a circuit pattern by screen printing.
しかしながら、（Ｖ）の方法においても、従来より銅板
と窒化アルミニウム基板との接合強度が不充分であった
り、場合によっては接合しないいわゆる接合不良が生じ
やすく、満足な銅回路を有する窒化アルミニウム基板と
はいいがたかった。However, even in the method (V), the bonding strength between the copper plate and the aluminum nitride substrate is insufficient, and in some cases, so-called bonding failures tend to occur, and the aluminum nitride substrate has a satisfactory copper circuit. Yes, it was hard.
本発明者らは、以上の問題点を解決することを目的とし
て種々検討を重ねた結果、接合に用いる銅板の不純物量
、とくに酸素含有量が接合強度ならびに接合性に大きく
影響を及ぼし、酸素含有量を特定値以下に抑えれば充分
な接合強度を有し、しかも接合不良を生じない銅回路を
有する窒化アルミニウム基板となることを見い出し本発
明を完成したものである。As a result of various studies aimed at solving the above problems, the present inventors found that the amount of impurities in the copper plates used for bonding, especially the oxygen content, greatly affects the bonding strength and bondability. The present invention has been completed by discovering that if the amount is kept below a specific value, an aluminum nitride substrate having a copper circuit that has sufficient bonding strength and does not cause bonding defects can be obtained.
〔課題を解決するための手段〕
すなわち、本発明は、窒化アルミニウム基板に銀、銅及
び活性金属もしくは活性金属を含む化合物からなる混合
物を介在させて銅板を接合してなる基板において、前記
銅板は酸素含有量５０ｐｐｍ以下の銅板であることを特
徴とする銅回路を有する窒化アルミニウム基板である。[Means for Solving the Problems] That is, the present invention provides a substrate in which a copper plate is bonded to an aluminum nitride substrate with a mixture of silver, copper, and an active metal or a compound containing an active metal interposed therebetween, wherein the copper plate is This is an aluminum nitride substrate having a copper circuit, characterized in that it is a copper plate with an oxygen content of 50 ppm or less.
以下、本発明をさらに詳細に説明する。The present invention will be explained in more detail below.
本発明では、銅板と窒化アルミニウム基板との接合剤と
して、銀、銅及びチタン、ジルコニウムなどの活性金属
もしくはこれら活性金属を含む化合物からなる混合粉末
を用い加熱接合して一体化するものである。In the present invention, a copper plate and an aluminum nitride substrate are integrated by heating and bonding using a mixed powder made of silver, copper, and active metals such as titanium and zirconium, or compounds containing these active metals, as a bonding agent.
前記（Ｖ）の方法において充分な接合強度が得られる原
因について、接合体の断面観察と接合層の組成分析を行
ない検討したところ、窒化アルミニウム側から、活性金
属の窒化物層、銀と銅の混合物層、銅板の順となってお
り、高温時に形成される窒化物層が窒化アルミニウムと
接合層との強度を維持していること、銅板と銀、銅から
なる接合層との強度は、銀と銅からなる混合層が銅板を
濡らし、さらに銅板と混合物層とが拡散層を形成してい
ることによることがわかった。We examined the reason why sufficient bonding strength was obtained in the method (V) above by observing the cross section of the bonded body and analyzing the composition of the bonding layer. The nitride layer formed at high temperatures maintains the strength between the aluminum nitride and the bonding layer, and the strength between the copper plate and the bonding layer made of silver and copper is the same as that of the silver. It was found that this is because the mixed layer consisting of copper and copper wets the copper plate, and the copper plate and the mixed layer form a diffusion layer.
本発明者らは、これら接合用ペーストならびに使用する
銅板の組成と接合状態との関係をさらに詳しく検討した
ところ、とくに銀、銅からなる接合層と銅板との接合状
態が、銅板の酸素含有量に大きく依存しており、酸素含
有量の少ない銅板はど接合状態もよく、接合強度も充分
であること、逆に酸素含有量の多い銅板を使用すると、
銅板からの酸素の放出が起こり、この放出酸素によって
ペースト中の活性金属の活性消失あるいはロウ材金属の
酸化により、溶融が起こらない部分が生じる等によって
、充分な接合強度が得られないこと、さらには接合の起
こらない場合も生じることを見い出したのである。The present inventors investigated in more detail the relationship between the composition of these bonding pastes and the copper plates used, and the bonding state, and found that the bonding state between the bonding layer consisting of silver and copper and the copper plate is influenced by the oxygen content of the copper plate. Copper plates with low oxygen content have good bonding conditions and sufficient bonding strength, while copper plates with high oxygen content, on the other hand,
Oxygen is released from the copper plate, and due to this released oxygen, the active metal in the paste loses its activity or the brazing metal oxidizes, resulting in areas where melting does not occur, making it impossible to obtain sufficient bonding strength. found that bonding occurs even when no bonding occurs.
銅回路を有する窒化アルミニウム基板の製造方法には、
前記（ｉ）〜（Ｖ）の方法がある。（ｉ）のＤＢＣ法は
、ＣｕｚＯ−０の共晶を用いて接合する方法であり、酸
素の介在が必要な方法であるため、酸素をある程度含有
する銅板例えば３００〜４００ｐｐｍのタフピッチ銅が
用いられる。The method for manufacturing an aluminum nitride substrate with a copper circuit includes:
There are methods (i) to (V) above. The DBC method (i) is a bonding method using a CuzO-0 eutectic and requires the presence of oxygen, so a copper plate containing a certain amount of oxygen, such as tough pitch copper of 300 to 400 ppm, is used. .
また、（ｉｉ）〜（Ｖ）の方法においては、基本的にペ
ースト（ロウ材）を介して銅板と窒化アルミニウム基板
を接合するため、銅板の酸素含有量がその接合性に大き
く影響するはずであるが、従来、銅板の酸素含有量と接
合性との関連から、使用できる銅板の酸素含有量を追求
したものはない。In addition, in methods (ii) to (V), the copper plate and aluminum nitride substrate are basically bonded via paste (brazing material), so the oxygen content of the copper plate should have a large effect on the bondability. However, due to the relationship between the oxygen content of a copper plate and bonding properties, there has been no attempt to determine the oxygen content of a copper plate that can be used.
本発明者は、タフピッチ銅を含め、種々、酸素含有量の
異なる銅板を用意し、接合性を検討したところ、本発明
の（Ｖ）による方法においては、使用する銅板の酸素含
有量が５０ｐｐｒｎ以下でないと銅板とロウ材の接合性
が充分に起こらないこと、好ましくは３０ｐｐｍ以下と
する必要があること、１１００ｐｐの酸素含有量を有す
る銅板では一部接合しない部分が発生すること、さらに
３００〜４００ｐｐｍの酸素含有量を有するタフピッチ
銅では全く接合が生じないことを見い出したのである。The present inventor prepared various copper plates with different oxygen contents, including tough pitch copper, and examined the bonding properties, and found that in the method according to (V) of the present invention, the oxygen content of the copper plates used was 50 pprn or less. Otherwise, sufficient bonding between the copper plate and the brazing material will not occur, and the oxygen content should preferably be 30 ppm or less. In a copper plate with an oxygen content of 1100 ppm, some parts will not bond. They found that no bonding occurs with tough pitch copper having an oxygen content of .
本発明の銅回路を有する窒化アルミニウム基板を得るに
際し、銀と銅粉末の混合比は、重量割合で、銀６０〜８
０％、銅２０〜４０％が好ましく採用される。この混合
比は、後の熱処理工程における処理温度により任意に選
択されるが、処理温度の低下及び接合強度の向上の点か
ら、銀７２％、銅２８％のいわゆる共晶組成が最も好ま
しい。活性金属もしくは活性金属を含む化合物粉の量は
、銀と銅の混合粉末１００重量部に対し活性金属換算で
５〜２０重量部が好ましく、さらに活性金属種としては
、チタン、ジルコニウムが、とくにチタンの水素化物が
好適である。When obtaining an aluminum nitride substrate having a copper circuit according to the present invention, the mixing ratio of silver and copper powder is 60 to 8 by weight.
0% and 20 to 40% copper are preferably employed. This mixing ratio is arbitrarily selected depending on the treatment temperature in the subsequent heat treatment step, but from the viewpoint of lowering the treatment temperature and improving bonding strength, a so-called eutectic composition of 72% silver and 28% copper is most preferable. The amount of active metal or compound powder containing active metal is preferably 5 to 20 parts by weight in terms of active metal per 100 parts by weight of mixed powder of silver and copper, and the active metal species include titanium and zirconium, especially titanium. hydrides are preferred.
これら混合粉末を窒化アルミニウム基板上に積層する方
法としては、通常、混合粉末をペースト化し塗布する方
法で行なう。ペーストの調製には、打機溶剤、例えばメ
チルセルソルブ、エチルセルソルブ、テレピネオール、
トルエン等や、有機結合剤、例えばエチルセルローズ、
メチルセルローズ、ＰＭＭＡ等が用いられる。The method of laminating these mixed powders on an aluminum nitride substrate is usually a method in which the mixed powders are made into a paste and coated. For the preparation of the paste, a battering machine solvent such as methylcellosolve, ethylcellosolve, terpineol,
Toluene etc., organic binders such as ethyl cellulose,
Methyl cellulose, PMMA, etc. are used.
ペーストの配合の一例を示せば、有機溶剤６０〜７０容
量部、上記混合粉末１８〜３０容量部及び有機結合剤０
〜２０容量部で、これらの合計が１００容量部である。An example of the composition of the paste is: 60 to 70 parts by volume of organic solvent, 18 to 30 parts by volume of the above mixed powder, and 0 parts by volume of organic binder.
~20 parts by volume, for a total of 100 parts by volume.
ペースト粘度としては１００００〜１０００００ｃｐｓ
程度である。Paste viscosity is 10,000 to 100,000 cps
That's about it.
本発明で使用される窒化アルミニウム基板としては、公
知の方法で製造されたものが使用でき、その−例を示せ
ば、焼結助剤を添加せずホットプレス法で焼結したもの
、イツトリア、カルシアなどの焼結助剤を窒化アルミニ
ウム粉末に添加し常圧焼結したものなどである。As the aluminum nitride substrate used in the present invention, those manufactured by known methods can be used. Examples include those sintered by hot press method without adding a sintering aid, itria, It is made by adding a sintering aid such as calcia to aluminum nitride powder and sintering it under normal pressure.
以下、本発明の銅回路を有する窒化アルミニウム基板の
製法の一例を説明する。An example of a method for manufacturing an aluminum nitride substrate having a copper circuit according to the present invention will be described below.
■ 窒化アルミニウム基板上に、上記ペーストをスクリ
ーン印刷法等で回路パターン状に塗布する。(2) Apply the above paste in a circuit pattern onto an aluminum nitride substrate by screen printing or the like.
■ 回路パターンと同形状もしくはパターン全面を覆え
る面積を有しかつ本発明に係る酸素含有量を有する銅板
をペースト塗布面上に配置する。(2) A copper plate having the same shape as the circuit pattern or an area that can cover the entire surface of the pattern and having the oxygen content according to the present invention is placed on the paste application surface.
■ 上記■の積層体を不活性雰囲気中もしくは真空中で
加熱処理し接合体を形成する。(2) The laminate of (2) above is heat-treated in an inert atmosphere or in a vacuum to form a bonded body.
■ 上記■のうち、回路パターンと同形状の銅板を配置
したものは、接合後、そのまま回路を有する窒化アルミ
ニウム基板となる。また、パターン全面を覆える銅板を
使用したものは、接合後、エツチング法により不要部分
を除去すれば、回路パターンとなる。(2) In the case (2) above, the one in which a copper plate having the same shape as the circuit pattern is arranged becomes an aluminum nitride substrate with a circuit after bonding. In addition, if a copper plate that can cover the entire pattern is used, after bonding, unnecessary portions can be removed by etching to form a circuit pattern.
なお、上記工程中、■における不活性雰囲気とはＡｒ、
ｌｉｅ、 Ｎ、等であり、加熱条件としては、８００
〜９５０°Ｃで保持することが好ましい。昇温速度とし
ては１０°Ｃ／分以下好ましくは５°Ｃ／分以下とする
のがよい。昇温速度の速い場合、ペースト中に含まれる
炭素が高温まで残留し、接合強度の弱い回路基板となり
やすい。In addition, in the above steps, the inert atmosphere in (1) is Ar,
ie, N, etc., and the heating conditions are 800
Preferably, the temperature is maintained at ~950°C. The temperature increase rate is preferably 10°C/min or less, preferably 5°C/min or less. If the temperature rise rate is fast, the carbon contained in the paste remains at high temperatures, which tends to result in a circuit board with weak bonding strength.
〔実施例〕
以下、実施例と比較例をあげて、さらに具体的に本発明
を説明する。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples and Comparative Examples.
実施例１〜８
銀粉末７２重量％、銅粉末２８重量％からなる混合粉末
１００重量部に対し、チタン粉末及び水素化チタン粉末
を各々１０重量部ないし２０重量部添加後、さらに、Ｐ
ＭＭＡを１．０重量部とテレピネオールを加え、充分混
合し、ペーストを調製した。このペーストを５０胴Ｘ５
０ｍｍＸ０．６３５ｍｍＬの窒化アルミニウム基板の両
面にスクリーン印刷したのち乾燥した。その際、片面は
ほぼ全面に、もう一方の面は半導体素子搭載のため島状
に印刷した。Examples 1 to 8 After adding 10 to 20 parts by weight of titanium powder and titanium hydride powder to 100 parts by weight of a mixed powder consisting of 72% by weight of silver powder and 28% by weight of copper powder, P was further added.
1.0 parts by weight of MMA and terpineol were added and thoroughly mixed to prepare a paste. Add this paste to 50 cylinders x 5
After screen printing was performed on both sides of a 0 mm x 0.635 mm L aluminum nitride substrate, it was dried. At that time, one side was printed almost entirely, and the other side was printed in an island shape to accommodate the semiconductor elements.
次に、３０ｐｐｍ又は５０ｐｐｎ＋の酸素含有量で、か
つペースト塗布位置と同形状の銅板を接触配置後、真空
中９００℃でｌｈｒ熱処理し接合体を作製した。これら
の接合体の銅板をはがし、剥離した状態を観察すること
により接合性を調べた。それらの結果を表１に示す。Next, a copper plate having an oxygen content of 30 ppm or 50 ppn+ and having the same shape as the paste application position was placed in contact with the copper plate, and then subjected to lhr heat treatment at 900° C. in vacuum to produce a bonded body. The bondability was examined by peeling off the copper plate of these bonded bodies and observing the peeled state. The results are shown in Table 1.
なお、銅板の酸素含有量は、ＬＥＣＯ社製酸素分析計Ｒ
Ｏ−１８を使用し、溶融抽出法にて測定した。The oxygen content of the copper plate was measured using an oxygen analyzer R manufactured by LECO.
It was measured by the melt extraction method using O-18.
比較例１〜８
酸素含有量が１１００ｐｐ又は３００ｐｐｍである銅板
を用いたこと以外は実施例１〜８と同様にして接合処理
を実施した。それらの接合性の観察結果を表１に示す。Comparative Examples 1 to 8 Bonding treatments were carried out in the same manner as Examples 1 to 8, except that copper plates having an oxygen content of 1100 ppm or 300 ppm were used. Table 1 shows the observation results of their zygosity.
本発明のように、酸素含有量を低く抑えた銅板を使用す
ることにより、接合性の良好な銅回路を有する窒化アル
ミニウム基板とすることができる。By using a copper plate with a low oxygen content as in the present invention, an aluminum nitride substrate having a copper circuit with good bonding properties can be obtained.
Claims (1)
は活性金属を含む化合物からなる混合物を介在させて銅
板を接合してなる基板において、前記銅板は酸素含有量
５０ｐｐｍ以下の銅板であることを特徴とする銅回路を
有する窒化アルミニウム基板。1. A substrate formed by bonding a copper plate to an aluminum nitride substrate with a mixture of silver, copper, and an active metal or a compound containing an active metal interposed therebetween, wherein the copper plate is a copper plate with an oxygen content of 50 ppm or less. Aluminum nitride substrate with circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1250484A JPH07114316B2 (en) | 1989-09-28 | 1989-09-28 | Method for manufacturing aluminum nitride substrate having copper circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1250484A JPH07114316B2 (en) | 1989-09-28 | 1989-09-28 | Method for manufacturing aluminum nitride substrate having copper circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32368096A Division JPH09191059A (en) | 1996-12-04 | 1996-12-04 | Power semiconductor module substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03114289A true JPH03114289A (en) | 1991-05-15 |
| JPH07114316B2 JPH07114316B2 (en) | 1995-12-06 |
Family
ID=17208546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1250484A Expired - Lifetime JPH07114316B2 (en) | 1989-09-28 | 1989-09-28 | Method for manufacturing aluminum nitride substrate having copper circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07114316B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
| WO2013024813A1 (en) * | 2011-08-12 | 2013-02-21 | 三菱マテリアル株式会社 | Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module |
| CN107556060A (en) * | 2017-09-04 | 2018-01-09 | 福建华清电子材料科技有限公司 | The method of al nitride ceramic board metallization |
| EP4175425A4 (en) * | 2020-06-29 | 2023-12-27 | BYD Company Limited | Ceramic-cladded copper plate and method for manufacturing ceramic-cladded copper plate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103741141B (en) * | 2014-01-24 | 2016-03-02 | 浙江工业大学 | A kind of metallized method of al nitride ceramic board |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5822157A (en) * | 1981-08-03 | 1983-02-09 | 松下電工株式会社 | Metallic foil plated laminated board |
| JPS60177635A (en) * | 1984-02-24 | 1985-09-11 | Toshiba Corp | Manufacture of good heat conductive substrate |
-
1989
- 1989-09-28 JP JP1250484A patent/JPH07114316B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5822157A (en) * | 1981-08-03 | 1983-02-09 | 松下電工株式会社 | Metallic foil plated laminated board |
| JPS60177635A (en) * | 1984-02-24 | 1985-09-11 | Toshiba Corp | Manufacture of good heat conductive substrate |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
| WO2013024813A1 (en) * | 2011-08-12 | 2013-02-21 | 三菱マテリアル株式会社 | Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module |
| CN103733329A (en) * | 2011-08-12 | 2014-04-16 | 三菱综合材料株式会社 | Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module |
| US9066433B2 (en) | 2011-08-12 | 2015-06-23 | Mitsubishi Materials Corporation | Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate |
| EP2743978A4 (en) * | 2011-08-12 | 2015-07-29 | Mitsubishi Materials Corp | Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module |
| TWI575680B (en) * | 2011-08-12 | 2017-03-21 | 三菱綜合材料股份有限公司 | Substrate for power module, substrate for power module with heat sink, method for manufacturing power module and substrate for power module |
| CN107556060A (en) * | 2017-09-04 | 2018-01-09 | 福建华清电子材料科技有限公司 | The method of al nitride ceramic board metallization |
| EP4175425A4 (en) * | 2020-06-29 | 2023-12-27 | BYD Company Limited | Ceramic-cladded copper plate and method for manufacturing ceramic-cladded copper plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07114316B2 (en) | 1995-12-06 |
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