JPH0714015B2 - Manufacturing method of aluminum nitride substrate having copper circuit - Google Patents
Manufacturing method of aluminum nitride substrate having copper circuitInfo
- Publication number
- JPH0714015B2 JPH0714015B2 JP1238169A JP23816989A JPH0714015B2 JP H0714015 B2 JPH0714015 B2 JP H0714015B2 JP 1238169 A JP1238169 A JP 1238169A JP 23816989 A JP23816989 A JP 23816989A JP H0714015 B2 JPH0714015 B2 JP H0714015B2
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- Japan
- Prior art keywords
- copper
- aluminum nitride
- pattern
- nitride substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Insulated Metal Substrates For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、銅回路を有する窒化アルミニウム基板の製法
に関するもので、特にパワー半導体モジユール等に適し
た熱放散性回路基板の改良製法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an aluminum nitride substrate having a copper circuit, and more particularly to an improved method for manufacturing a heat-dissipating circuit board suitable for a power semiconductor module or the like.
従来より、銅板と窒化アルミニウム基板の接合として
は、活性金属法（例えば特開昭60−177634号公報）や、
銅板と表面酸化処理してなる窒化アルミニウム基板とを
銅の融点以下Cu2O-Oの共晶温度以上で加熱して接合する
いわゆるDBC法（例えば特開昭56−163093号公報）など
が知られている。Conventionally, an active metal method (for example, Japanese Patent Laid-Open No. 60-177634) or a method for joining a copper plate and an aluminum nitride substrate
A so-called DBC method (for example, Japanese Patent Laid-Open No. 56-163093) is known, in which a copper plate and a surface-oxidized aluminum nitride substrate are heated at a temperature below the melting point of copper and above the eutectic temperature of Cu 2 OO to join them. There is.
活性金属法は、DBC法に比較して、 （１）接合処理温度が低いので、AlN−Cuの熱膨張差に
よつて生じる残留応力が小さい。Compared to the DBC method, the active metal method (1) has a lower bonding treatment temperature, and therefore has less residual stress caused by the difference in thermal expansion of AlN-Cu.
（２）接合不良が少なく接合強度が高い。(2) Bonding failure is small and bonding strength is high.
（３）接合層が延性金属であるので、ヒートシヨツクや
ヒートサイクルに対して耐久性が大である。(3) Since the bonding layer is a ductile metal, it has high durability against heat shock and heat cycles.
などの利点を有する反面、DBC法で採用されている全面
ベタ付エツチングによる回路形成ができず、生産性が悪
いという問題がある。その理由は、次のとおりである。
すなわち、活性金属法で用いられる活性金属はTi,Zrが
一般的であるが、それらはAlNと反応してAlN基板表面で
TiN,ZrNを生成することによつて強固な接合をもたら
す。しかしながら、回路基板の場合には、回路間は絶縁
されていなければならないので、導体成分であるTiNやZ
rNを除去する必要があり、それらの除去には、銅で採用
されているような塩化第２鉄のエッチング液ではでき
ず、したがってろう材ペーストを全面塗布しさらに銅板
をベタ付してエッチング処理し回路を形成するような方
法をとることができない。そのためこれの改良法が種々
検討されているが、まだ十分に満足したものは得られて
いない。On the other hand, there is a problem that the productivity cannot be improved because the circuit cannot be formed by the solid etching with the entire surface adopted in the DBC method. The reason is as follows.
In other words, the active metals used in the active metal method are generally Ti and Zr, but they react with AlN and react on the AlN substrate surface.
By producing TiN and ZrN, a strong bond is brought about. However, in the case of a circuit board, the circuits must be insulated from each other, so TiN or Z
It is necessary to remove rN, which cannot be removed with an etching solution of ferric chloride such as that used for copper. Therefore, the brazing filler metal paste is applied over the entire surface and the copper plate is solid-etched. However, it is impossible to adopt a method of forming a circuit. Therefore, various improved methods have been investigated, but a satisfactory method has not been obtained yet.
本発明者らは、以上の問題点を解決するために種々検討
した結果、DBC法で採用されているような銅板の全面ベ
タ付エツチングによる生産性向上法を上記した長所を有
する活性金属法によつて達成できることを見い出し、本
発明を完成したものである。The present inventors have conducted various studies in order to solve the above problems, as a result of the active metal method having the above-mentioned advantages of the productivity improving method by full-faced etching of a copper plate as used in the DBC method. The present invention has been completed by finding out what can be achieved.
すなわち、本発明は、次の（ａ），（ｂ）及び（ｃ）の
工程からなることを特徴とする銅回路を有する窒化アル
ミニウム基板の製法である。That is, the present invention is a method for manufacturing an aluminum nitride substrate having a copper circuit, which comprises the following steps (a), (b) and (c).
（ａ）窒化アルミニウム基板上に、活性金属ろう材ペー
ストを所望の接合パターンに塗布する工程 （ｂ）上記塗布ペースト上に、接合パターンを覆うに十
分な広さの銅板を接合する工程 （ｃ）上記接合体の銅板上に、上記接合パターンを少な
くとも備えた回路パターンをエツチングレジストにより
形成させた後、エツチング処理して不要部分を除去する
工程 以下、さらに詳しく本発明について説明する。(A) A step of applying an active metal brazing material paste to a desired joining pattern on an aluminum nitride substrate (b) A step of joining a copper plate having a sufficient width to cover the joining pattern on the above applying paste (c) The step of forming a circuit pattern having at least the above-mentioned bonding pattern on the copper plate of the above-mentioned bonded body by an etching resist and then performing an etching treatment to remove unnecessary portions. The present invention will be described in more detail below.
（ａ）工程の説明 本発明では、銅板と窒化アルミニウム基板の接合剤とし
て、活性金属ろう材ペーストを用いるが、これには、
銅、銀及び水素化チタンの粉末に、有機溶剤又は有機溶
剤と有機結合剤を配合してなるものが好ましい。通常、
これらのろう材では、活性金属として、チタン、ジルコ
ニウム、ハフニウム等が用いられているが、本発明で
は、それらの中で特にチタンを、しかもその添加形態と
して水素化物を用いることが望ましい。その理由は、ペ
ースト中のチタンが有機溶剤中の溶存酸素等によつて酸
化されることなく、接合工程までその活性を維持させる
ためである。すなわち、金属チタンの場合は、溶存酸素
等による酸化によつて接合工程に至るまでに活性を失う
おそれがあるが、水素化チタンの場合は、接合工程の加
熱処理によつて初めて水素を放出し活性な金属チタンと
なつてAlN表面に作用するので、そのようなおそれがな
いからである。(A) Description of Process In the present invention, an active metal brazing paste is used as a bonding agent between a copper plate and an aluminum nitride substrate.
It is preferable to use powders of copper, silver and titanium hydride mixed with an organic solvent or an organic solvent and an organic binder. Normal,
In these brazing filler metals, titanium, zirconium, hafnium, etc. are used as the active metal, but in the present invention, it is particularly preferable to use titanium among them and to use hydride as the addition form. The reason is that the titanium in the paste is maintained in its activity until the bonding step without being oxidized by the dissolved oxygen in the organic solvent. That is, in the case of titanium metal, the activity may be lost before the bonding step due to oxidation by dissolved oxygen, but in the case of titanium hydride, hydrogen is released only by the heat treatment in the bonding step. This is because such an active metal titanium acts on the AlN surface, and there is no such possibility.
本発明において、銀と銅粉末の混合比は、重量割合で、
銀60〜80％、銅20〜40％が好ましく採用される。この混
合比は、後の熱処理工程における処理温度により任意に
選択されるが、処理温度の低下及び接合強度の向上の点
から、銀72％、銅28％のいわゆる共晶組成が最も好まし
い。In the present invention, the mixing ratio of silver and copper powder is a weight ratio,
Silver of 60 to 80% and copper of 20 to 40% are preferably adopted. This mixing ratio is arbitrarily selected depending on the treatment temperature in the subsequent heat treatment step, but a so-called eutectic composition of 72% silver and 28% copper is most preferable from the viewpoint of lowering the treatment temperature and improving the bonding strength.
銀と銅の混合粉末100重量部に対するチタン及び／又は
水素化チタンは２重量部以上25重量部以下が好ましい。
２重量部未満では生成される窒化チタン層が少なくな
り、窒化アルミニウム焼結体との接合強度が充分高くな
く、一方、25重量部を越えると生成する窒化チタン量が
増加するため窒化アルミニウム焼結体との接着強度は増
すが残留応力の緩和が困難となりクラツクが発生しやす
くなる。Titanium and / or titanium hydride is preferably 2 parts by weight or more and 25 parts by weight or less based on 100 parts by weight of the mixed powder of silver and copper.
If the amount is less than 2 parts by weight, the titanium nitride layer produced is small, and the bonding strength with the aluminum nitride sintered body is not sufficiently high. On the other hand, if it exceeds 25 parts by weight, the amount of titanium nitride produced is increased, so the aluminum nitride sintered body is increased. Although the adhesive strength with the body increases, it is difficult to alleviate the residual stress and cracking easily occurs.
有機溶剤としては、メチルセルソルブ，エチルセルソル
ブ，テルピネオール、イソホロン，トルエン等、また有
機結合剤としては、エチルセルローズ、メチルセルロー
ズ,PMMA等が用いられる。ペーストの配合の一例を示せ
ば、有機溶剤60〜70容量部、上記混合粉末30〜60容量部
及び有機結合剤０〜20容量部で、これらの合計が100容
量部である。ペーストの粘度としては20,000〜100,000c
ps程度である。As the organic solvent, methyl cellosolve, ethyl cellosolve, terpineol, isophorone, toluene, etc., and as the organic binder, ethyl cellulose, methyl cellulose, PMMA, etc. are used. An example of the paste formulation is 60 to 70 parts by volume of the organic solvent, 30 to 60 parts by volume of the mixed powder, and 0 to 20 parts by volume of the organic binder, and the total of these is 100 parts by volume. Paste viscosity of 20,000-100,000c
It is about ps.
本発明で使用される窒化アルミニウム基板としては、公
知の方法で製造されたものが使用でき、その一例を示せ
ば、焼結助剤を添加せずにホツトプレス法で焼結したも
の、イツトリア、カルシアなどの酸化物を窒化アルミニ
ウム粉末に添加して常圧焼結したものなどである。As the aluminum nitride substrate used in the present invention, those manufactured by a known method can be used, and if one example thereof is shown, those sintered by a hot press method without adding a sintering aid, ittoria, calcia Such oxides are added to aluminum nitride powder and sintered under normal pressure.
ペーストは窒化アルミニウム焼結体の片面又は両面にス
クリーン印刷法により塗布される。パワー半導体モジユ
ール用基板としては、片面に基板とほぼ同じ大きさの銅
板を接合しヒートシンク材と半田付けするため、この面
に対してはほぼ全面に上記ペーストを塗布する。また、
もう一方の面には半導体素子を搭載する銅回路板を接合
するため、目的回路パターンと同形の、又は目的回路パ
ターンの一部をなす形状の接合パターンをスクリーン印
刷により印刷する。後記するように、前者の場合には、
接合パターンと同形の銅回路が（ｃ）工程で形成され、
後者の場合には、接合パターンを含むが接合パターンと
は異なつた非接合部を有する銅回路が形成される。The paste is applied to one side or both sides of the aluminum nitride sintered body by a screen printing method. As a substrate for power semiconductor modules, a copper plate of approximately the same size as the substrate is bonded to one side and soldered to a heat sink material, so the paste is applied to almost this entire surface. Also,
In order to bond the copper circuit board on which the semiconductor element is mounted to the other surface, a bonding pattern having the same shape as the target circuit pattern or a shape forming a part of the target circuit pattern is printed by screen printing. As will be described later, in the case of the former,
A copper circuit having the same shape as the bonding pattern is formed in step (c),
In the latter case, a copper circuit including a bonding pattern but having a non-bonding portion different from the bonding pattern is formed.
塗布量としては、ペーストのはみ出しや接合不良等が起
こらないように、乾燥塗膜重量で4.5〜15mg/cm2程度と
するのが望ましい。The coating amount is preferably about 4.5 to 15 mg / cm 2 in terms of dry coating film weight so that the protrusion of the paste and the bonding failure do not occur.
（ｂ）工程の説明 （ａ）工程において、窒化アルミニウム基板のほぼ全面
にペーストを塗布した面にはそのペースト面を覆うに十
分な広さ、すなわち、窒化アルミニウム基板面と同程度
以上の広さのベタ銅板を接触配置する。一方、その片面
である接合パターンを印刷した面にも上記と同程度の広
さのベタ銅板を接触配置してもよいが、必ずしもそのよ
うにする必要はない。接合パターンを覆うに十分な広
さ、すなわち、接合パターンよりも広い銅板を接触配置
すればよい。その際の銅板としては無酸素銅板が望まし
い。(B) Step Description In step (a), the surface of the aluminum nitride substrate on which the paste is applied has a sufficient area to cover the paste surface, that is, an area that is at least as large as the surface of the aluminum nitride substrate. The solid copper plate of is placed in contact. On the other hand, a solid copper plate having the same size as the above may be placed in contact with the one side, on which the joining pattern is printed, but this is not always necessary. A copper plate having a sufficient width to cover the bonding pattern, that is, a copper plate wider than the bonding pattern may be arranged in contact. An oxygen-free copper plate is desirable as the copper plate in that case.
以上のようにして銅板が配置された窒化アルミニウム基
板は、800℃以上950℃以下の温度で熱処理される。800
℃に満たない温度においてもCu−Agは液相を生成する
が、このような条件下において作製された接合体は、介
在層と窒化アルミニウム焼結体や銅板との濡れが不良と
なり十分な接合強度を生じない。また、950℃を越える
温度で処理されたものは、接合層の粘性が小さいため、
銅板からペーストのはみ出しを生じ短絡の原因となつて
しまう。The aluminum nitride substrate on which the copper plate is arranged as described above is heat-treated at a temperature of 800 ° C. or higher and 950 ° C. or lower. 800
Although Cu-Ag forms a liquid phase even at temperatures below ℃, the joints produced under such conditions have poor wetting between the intervening layer and the aluminum nitride sintered body or copper plate Does not produce strength. In addition, since the viscosity of the bonding layer is small for those processed at temperatures above 950 ° C,
The paste may squeeze out from the copper plate, causing a short circuit.
熱処理雰囲気としては、Ar、He等の不活性ガス雰囲気下
でもよいが、真空雰囲気がろう材の濡れの点で望まし
い。The heat treatment atmosphere may be an inert gas atmosphere such as Ar or He, but a vacuum atmosphere is preferable from the viewpoint of wetting of the brazing material.
熱処理後冷却して本発明に係る銅を接合した窒化アルミ
ニウム基板とする。窒化アルミニウム焼結体と銅の熱膨
張係数の差が大きいので、その際の冷却速度を大きくす
ると得られた基板に残留応力に起因するクラツクや欠損
が生じることがある。そのため、本発明では、残留応力
を極力少なくするために冷却速度を５℃／分以下特に２
℃／分以下とするのが望ましい。After the heat treatment, it is cooled to obtain the aluminum nitride substrate bonded with copper according to the present invention. Since the difference in thermal expansion coefficient between the aluminum nitride sintered body and copper is large, if the cooling rate at that time is increased, cracks or defects due to residual stress may occur in the obtained substrate. Therefore, in the present invention, in order to reduce residual stress as much as possible, the cooling rate is 5 ° C./min or less, especially 2
It is desirable to set the temperature to below ° C / min.
（ｃ）工程の説明 （ｂ）工程で得られた接合体の銅板上に、エツチングレ
ジストを用いて最終目的の回路パターンを形成する。こ
の場合、エツチングレジストは、ろう材ペーストの塗布
位置（接合パターン）としつかりと合つていることが大
切であり、これについて充分な配慮が必要である。(C) Step Description A final target circuit pattern is formed on the copper plate of the joined body obtained in the step (b) using an etching resist. In this case, it is important that the etching resist matches the application position (bonding pattern) of the brazing material paste and the contact, and it is necessary to give sufficient consideration to this.
エツチングレジストを接合パターンと全く同じに形成さ
せた場合には、接合パターンと銅回路とは同形状になる
が、本発明では、何もこれに制限されるものではない。
接合パターンと同形状のエツチングレジストを形成させ
ると共にろう材ペーストが塗布されていない位置の銅板
にもそれを形成させることによつて、接合パターンとは
異なる形状で、しかも非接合部を有する銅回路を形成さ
せることができる。When the etching resist is formed in exactly the same shape as the bonding pattern, the bonding pattern and the copper circuit have the same shape, but the present invention is not limited to this.
By forming an etching resist having the same shape as the bonding pattern and also forming it on the copper plate in the position where the brazing material paste is not applied, a copper circuit having a shape different from the bonding pattern and having a non-bonding portion Can be formed.
次いで、エツチング処理によつて銅の不要部分を除去し
た後エツチングレジスト膜を除去して所期した銅回路を
有する窒化アルミニウム基板とする。エツチング液とし
ては、通常、銅のエツチングに用いられる塩化第２鉄溶
液が用いられる。Then, an unnecessary portion of copper is removed by an etching process and then the etching resist film is removed to obtain an aluminum nitride substrate having a desired copper circuit. As the etching solution, a ferric chloride solution used for etching copper is usually used.
以上のように、本発明においては、接合パターンと銅回
路パターンとを変えることも容易であり、そうすること
によつて非接合部を有する銅回路を簡単に形成させるこ
とができる。このように非接合部を形成させることの利
点は、外部電極と基板上の銅回路とを接続する際に、外
部電極をその非接合部に接続することによつて、通電・
停止のヒートサイクルによつて発生する金属部の膨張・
収縮による基板の損傷を防止することができるというこ
とである。また、DBC法の場合、非接合部を形成するに
は、予め非接合部に相当する銅板が基板と接触しないよ
うに銅板を特殊加工しなければならず、また特定の位置
にぴつたり配置する必要があるが、本発明ではそのよう
なことは必要でない。As described above, in the present invention, it is easy to change the joining pattern and the copper circuit pattern, and by doing so, the copper circuit having the non-joining portion can be easily formed. The advantage of forming the non-bonded portion in this manner is that when the external electrode is connected to the copper circuit on the substrate, the external electrode is connected to the non-bonded portion, so
Expansion of the metal part caused by the stop heat cycle
That is, it is possible to prevent damage to the substrate due to contraction. Further, in the case of the DBC method, in order to form the non-bonded portion, the copper plate must be specially processed in advance so that the copper plate corresponding to the non-bonded portion does not come into contact with the substrate, and the copper plate is arranged exactly at a specific position. Although necessary, such is not required by the present invention.
以下、図面を参照し、実施例と比較例をあげてさらに具
体的に本発明を説明する。Hereinafter, the present invention will be described more specifically with reference to the drawings and examples and comparative examples.
実施例１ 銀粉末72重量部、銅粉末28重量部、水素化チタン４重量
部、テレピネオール15重量部を混合してペーストを調整
した。このペーストを60mm×30mm×0.65mmtの窒化アル
ミニウム基板１の両面にスクリーン印刷した後乾燥し
た。その際、片面（裏面）はほぼ全面に（図示せず）、
もう一方の面（表面）は半導体素子搭載のため島状のペ
ースト層（接合パターン）２に印刷した（第１図参
照）。塗布量は乾燥後の塗膜が10mg/cm2となるようにし
た。Example 1 A paste was prepared by mixing 72 parts by weight of silver powder, 28 parts by weight of copper powder, 4 parts by weight of titanium hydride and 15 parts by weight of terpineol. This paste was screen-printed on both sides of an aluminum nitride substrate 1 of 60 mm × 30 mm × 0.65 mmt and then dried. At that time, one side (back side) is almost all over (not shown),
The other surface (front surface) was printed on an island-shaped paste layer (bonding pattern) 2 for mounting semiconductor elements (see FIG. 1). The coating amount was such that the coating film after drying was 10 mg / cm 2 .
次いで、60mm×30mm×0.30mmtの表銅板３を表面に、ま
た、60mm×30mm×0.20mmtの裏銅板４を裏面に接触配置
した後、スペーサーを介して240gの重しをのせ、８×10
-6Torrの真空中、最高温度850℃で30分間加熱処理して
から冷却速度５℃／分として冷却し窒化アルミニウム基
板と銅板の接合体を製造した。Next, after placing the front copper plate 3 of 60 mm × 30 mm × 0.30 mmt on the front surface and the back copper plate 4 of 60 mm × 30 mm × 0.20 mmt on the rear surface, place 240 g of weight through the spacer and 8 × 10
In a vacuum of -6 Torr, heat treatment was performed at a maximum temperature of 850 ° C for 30 minutes, and then cooling was performed at a cooling rate of 5 ° C / minute to manufacture a joined body of an aluminum nitride substrate and a copper plate.
得られた接合体の銅の面に、接合パターンとの位置ズレ
がないように目的最終の回路パターンをエツチングレジ
スト５で形成させた後（第２図参照）、塩化第２鉄溶液
でエツチング処理をして銅の不要部分を除去してからエ
ツチングレジスト膜を除去して銅回路６を有する窒化ア
ルミニウム基板とした（第３図参照）。なお、パターン
形成にはスクリーン印刷機を用いた。After forming an intended final circuit pattern with an etching resist 5 on the copper surface of the obtained bonded body so that there is no positional deviation from the bonded pattern (see FIG. 2), an etching treatment with a ferric chloride solution is performed. After removing unnecessary portions of copper, the etching resist film was removed to obtain an aluminum nitride substrate having a copper circuit 6 (see FIG. 3). A screen printer was used for pattern formation.
その結果、活性金属ろう材ペーストのはみ出しもなく、
そのまま回路基板として使用できる仕上りであつた。ま
た、これに無電解Ni-Ｐメツキにより銅の酸化防止処理
を行つたが、パターンの外にNi-Ｐメツキが析出するこ
となく、パワーモジユール用回路基板として何ら支障の
ないものが得られた。接合体のピール強度は15kg・f/cm
であり実用強度5kg・f/cmをはるかに上まわつていた。As a result, there is no protrusion of the active metal brazing material paste,
The finished product can be used as it is as a circuit board. In addition, the copper was subjected to antioxidation treatment by electroless Ni-P plating, but Ni-P plating was not deposited outside the pattern, and a circuit board for power modules that did not cause any problems was obtained. It was The peel strength of the bonded body is 15kgf / cm
The practical strength was much higher than 5 kgf / cm.
実施例２〜15 活性金属ろう材ペーストの組成と塗布量を変えたこと以
外は実施例１と同様にして回路基板を製造しピール強度
を測定した。その結果を表−１に示す。なお、回路基板
の外観はいずれも良好であつた。Examples 2 to 15 Circuit boards were manufactured in the same manner as in Example 1 except that the composition and the coating amount of the active metal brazing material paste were changed, and the peel strength was measured. The results are shown in Table-1. The appearance of each circuit board was good.
実施例16 エツチングレジスト７の塗布パターンを第４図に示すも
のにしたこと以外はは実施例１と全く同様な操作を行つ
て回路基板を製造した（第５図参照）。この回路基板
は、回路パターンと接合パターンとが異なるために、非
接合部９を有する銅回路８をもつものであるが、エツチ
ング処理によつても非接合部がうすくなるようなことは
なかつた。また、ペーストのはみ出しもなく、ピール強
度も14kg・f/cmと十分に高かつた。 Example 16 A circuit board was manufactured in the same manner as in Example 1 except that the coating pattern of the etching resist 7 was as shown in FIG. 4 (see FIG. 5). This circuit board has the copper circuit 8 having the non-bonding portion 9 because the circuit pattern and the bonding pattern are different, but the non-bonding portion did not become thin even by the etching process. . In addition, there was no squeeze-out of the paste, and the peel strength was sufficiently high at 14 kgf / cm.
比較例１ 窒化アルミニウム基板の両面に、ペーストを接合パター
ン状にスクリーン印刷し、これに予めパターン形状に加
工した銅板（回路側0.3mm、裏面0.2mm）をペースト塗布
部に位置ズレのないように置いたこと以外は、実施例１
と同様にして銅回路を有する窒化アルミニウム基板を製
造した。その結果、無電解Ni−Ｐメツキ前の状態で銅板
の位置精度を測定したところ、測定数1,000枚のうち153
枚が目的公差を外れていた。Comparative Example 1 A paste was screen-printed on both sides of an aluminum nitride substrate in a joining pattern, and a copper plate (0.3 mm on the circuit side, 0.2 mm on the back side) pre-processed in the pattern was placed on the paste application part without displacement. Example 1 except that it was placed
An aluminum nitride substrate having a copper circuit was manufactured in the same manner as in. As a result, when the position accuracy of the copper plate was measured in the state before electroless Ni-P plating, 153 out of 1,000 measured
The sheet was out of the target tolerance.
比較例２ 窒化アルミニウム基板の両面に所望の接合パターンを形
成するかわりにスクリーン印刷でベタ印刷し、これに目
的パターンの形成が可能となる大きさのベタ銅板を置い
たこと以外は実施例１と同様にして銅回路を有する窒化
アルミニウム基板を製造した。Comparative Example 2 The same as Example 1 except that solid printing was performed by screen printing instead of forming a desired bonding pattern on both sides of an aluminum nitride substrate, and a solid copper plate having a size capable of forming a target pattern was placed on the solid printing. Similarly, an aluminum nitride substrate having a copper circuit was manufactured.
得られた銅の面に目的の回路パターンをエツチングレジ
ストを用いて形成した後、塩化第２鉄溶液でエツチング
処理をし、銅の不要部分を除去したが、不要部分の基板
表面にはTiN層が残つており回路間は短絡していた。こ
のTiN層をフツ酸溶液で溶解し目的回路基板を得た。し
かしながら、この基板について−40℃と150℃のヒート
シヨツク試験を実施したところ、２回目に基板にクラツ
クが生じ信頼性の点で問題があることがわかつた。After forming the desired circuit pattern on the obtained copper surface using an etching resist, an etching treatment with a ferric chloride solution was performed to remove unnecessary portions of copper, but a TiN layer was formed on the substrate surface of the unnecessary portions. Was left and there was a short circuit between the circuits. This TiN layer was dissolved with a hydrofluoric acid solution to obtain a target circuit board. However, when this substrate was subjected to a heat shock test at −40 ° C. and 150 ° C., it was found that a crack occurred on the substrate for the second time and there was a problem in reliability.
本発明によれば、活性金属性とDBC法の両方の長所が採
り入れられた銅回路を有する窒化アルミニウム基板を製
造することができる。すなわち、接合強度とパターン精
度に優れた銅回路を有する窒化アルミニウム基板を簡単
に製造することができる。また、接合パターンと異なる
非接合部を有する銅回路を形成させることもできるの
で、そのように形成させた非接合部に外部電極を取付け
ることによつて、ヒートサイクル時に発生する熱応力か
ら解放され基板が損傷することも少なくなる。According to the present invention, it is possible to manufacture an aluminum nitride substrate having a copper circuit incorporating the advantages of both the active metal property and the DBC method. That is, it is possible to easily manufacture an aluminum nitride substrate having a copper circuit having excellent bonding strength and pattern accuracy. Further, since it is possible to form a copper circuit having a non-bonding part different from the bonding pattern, by attaching an external electrode to the non-bonding part thus formed, the thermal stress generated during the heat cycle can be released. Substrate damage is also reduced.
第１図〜第３図は実施例１〜15の銅回路を有する窒化ア
ルミニウム基板の、また第１図と第４図〜第５図は実施
例16のそれの製造工程を説明するための斜視図である。 １…窒化アルミニウム基板 ２…島状のペースト層（接合パターン） ３…表銅板 ４…裏銅板 5,7…エツチングレジスト ６…非接合部を有しない銅回路 ８…非接合部９を有する銅回路1 to 3 are perspective views for explaining the manufacturing process of an aluminum nitride substrate having a copper circuit according to Examples 1 to 15, and FIGS. 1 and 4 to 5 are for explaining the manufacturing process thereof according to Example 16. It is a figure. DESCRIPTION OF SYMBOLS 1 ... Aluminum nitride substrate 2 ... Island-like paste layer (bonding pattern) 3 ... Front copper plate 4 ... Back copper plate 5,7 ... Etching resist 6 ... Copper circuit without non-bonding part 8 ... Copper circuit with non-bonding part 9
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｃ０４Ｂ 41/90 Ｚ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location // C04B 41/90 Z
Claims (1)
なることを特徴とする銅回路を有する窒化アルミニウム
基板の製法。 （ａ）窒化アルミニウム基板上に、活性金属ろう材ペー
ストを所望の接合パターンに塗布する工程 （ｂ）上記塗布ペースト上に、接合パターンを覆うに十
分な広さの銅板を接合する工程 （ｃ）上記接合体の銅板上に、上記接合パターンを少な
くとも備えた回路パターンをエツチングレジストにより
形成させた後、エツチング処理して不要部分を除去する
工程1. A method of manufacturing an aluminum nitride substrate having a copper circuit, which comprises the following steps (a), (b) and (c). (A) A step of applying an active metal brazing material paste to a desired joining pattern on an aluminum nitride substrate (b) A step of joining a copper plate having a sufficient width to cover the joining pattern on the above applying paste (c) After forming a circuit pattern having at least the bonding pattern on the copper plate of the bonded body by an etching resist, an etching process to remove unnecessary portions
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1238169A JPH0714015B2 (en) | 1989-09-13 | 1989-09-13 | Manufacturing method of aluminum nitride substrate having copper circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1238169A JPH0714015B2 (en) | 1989-09-13 | 1989-09-13 | Manufacturing method of aluminum nitride substrate having copper circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03101153A JPH03101153A (en) | 1991-04-25 |
| JPH0714015B2 true JPH0714015B2 (en) | 1995-02-15 |
Family
ID=17026206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1238169A Expired - Lifetime JPH0714015B2 (en) | 1989-09-13 | 1989-09-13 | Manufacturing method of aluminum nitride substrate having copper circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714015B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011108498A1 (en) * | 2010-03-02 | 2011-09-09 | 株式会社トクヤマ | Method for manufacturing a metallized substrate |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04168792A (en) * | 1990-11-01 | 1992-06-16 | Kawasaki Steel Corp | Manufacture of high heat radiating ceramic circuit board with excellent thermal shock resistance |
| JPH0832204A (en) * | 1994-07-19 | 1996-02-02 | Dowa Mining Co Ltd | Production of ceramic wiring board |
| US5955686A (en) * | 1996-10-30 | 1999-09-21 | Dowa Mining Co., Ltd. | Brazing materials for producing metal-ceramics composite substrates |
| JP3682552B2 (en) * | 1997-03-12 | 2005-08-10 | 同和鉱業株式会社 | Method for producing metal-ceramic composite substrate |
| KR101336902B1 (en) | 2009-03-30 | 2013-12-04 | 가부시끼가이샤 도꾸야마 | Process for producing metallized substrate and metallized substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4500029A (en) * | 1982-06-11 | 1985-02-19 | General Electric Company | Electrical assembly including a conductor pattern bonded to a non-metallic substrate and method of fabricating such assembly |
| JPH0738423B2 (en) * | 1986-08-07 | 1995-04-26 | 昭和電工株式会社 | Hybrid integrated circuit board and manufacturing method thereof |
| JP2571233B2 (en) * | 1987-09-05 | 1997-01-16 | 昭和電工株式会社 | Circuit board manufacturing method |
-
1989
- 1989-09-13 JP JP1238169A patent/JPH0714015B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011108498A1 (en) * | 2010-03-02 | 2011-09-09 | 株式会社トクヤマ | Method for manufacturing a metallized substrate |
| US9374893B2 (en) | 2010-03-02 | 2016-06-21 | Tokuyama Corporation | Production method of metallized substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03101153A (en) | 1991-04-25 |
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