JPH09191059A - Power semiconductor module substrate - Google Patents
Power semiconductor module substrateInfo
- Publication number
- JPH09191059A JPH09191059A JP32368096A JP32368096A JPH09191059A JP H09191059 A JPH09191059 A JP H09191059A JP 32368096 A JP32368096 A JP 32368096A JP 32368096 A JP32368096 A JP 32368096A JP H09191059 A JPH09191059 A JP H09191059A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- power semiconductor
- semiconductor module
- aluminum nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、パワー半導体モジュー
ル基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module substrate.
【０００２】[0002]
【従来の技術】従来、窒化アルミニウム基板の一方の面
に銅回路、その反対面に放熱銅板が形成されてなるパワ
ー半導体モジュール基板は知られており、それを製造す
るための窒化アルミニウム基板と、銅回路、放熱銅板な
いしは銅回路又は放熱銅板を形成させるための銅板（以
下、これを総称して「銅部材」という。）とを接合する
方法としては、以下が提案されている。2. Description of the Related Art Conventionally, there has been known a power semiconductor module substrate in which a copper circuit is formed on one surface of an aluminum nitride substrate and a heat dissipation copper plate is formed on the opposite surface thereof, and an aluminum nitride substrate for manufacturing the same is used. The following methods have been proposed as a method for joining a copper circuit, a heat radiation copper plate or a copper plate for forming a copper circuit or a heat radiation copper plate (hereinafter collectively referred to as "copper member").
【０００３】（１）表面を酸化した窒化アルミニウム基
板に銅部材を接触配置し、銅の融点以下、Ｃｕ2 Ｏ−Ｏ
の共晶温度以上で加熱接合するいわゆるＤＢＣ法（例え
ば特開昭５９−１２１１７５号公報）。 （２）窒化アルミニウム基板と銅部材との間にＡｇ箔、
Ｃｕ箔、活性金属箔を順次積層し加熱接合する方法（例
えば特開昭５６−１６３０９３号公報）。 （３）上記金属の合金板を介在させ加熱接合する方法
（例えば特開昭５８−１４０３８１号公報）。 （４）上記金属からなる合金粉末を介在させ加熱接合す
る方法（例えば特開昭５６−１６３０９３号公報）。 （５）銀粉、銅粉及び活性金属もしくは活性金属を含む
化合物粉からなる混合粉末をペースト化し、それを窒化
アルミニウム基板上に塗布後、銅部材を配置し、加熱接
合するいわゆる活性金属ロウ付け法。[0003] (1) the surface in contact placing copper member to an aluminum nitride substrate obtained by oxidizing the following melting point of copper, Cu 2 O-O
The so-called DBC method of heating and joining at a temperature above the eutectic temperature (for example, JP-A-59-112175). (2) Ag foil between the aluminum nitride substrate and the copper member,
A method in which a Cu foil and an active metal foil are sequentially laminated and heat-bonded (for example, JP-A-56-163093). (3) A method of heating and joining by interposing an alloy plate of the above metal (for example, JP-A-58-140381). (4) A method of heating and joining by interposing an alloy powder made of the above metal (for example, JP-A-56-163093). (5) A so-called active metal brazing method in which a mixed powder composed of silver powder, copper powder and active metal or a compound powder containing an active metal is made into a paste, which is applied on an aluminum nitride substrate, a copper member is arranged and heat-bonded. .
【０００４】これらの方法のうち、（２）〜（５）の方
法は、銅部材と窒化アルミニウム基板の間に、Ａｇ、Ｃ
ｕ及び活性金属かなる成分を介在させ接合体を得るもの
であり、とくに（５）の方法は、特別に箔や、合金板、
合金粉末等を用いずに簡便に接合層を形成できることに
加えて、スクリーン印刷法によって容易に回路パターン
状に接合層を形成できる点で有利な方法である。Among these methods, the methods (2) to (5) use Ag and C between the copper member and the aluminum nitride substrate.
A joined body is obtained by interposing u and a component composed of an active metal. Particularly, the method (5) is particularly applied to a foil, an alloy plate,
This is an advantageous method in that the bonding layer can be easily formed without using alloy powder and the like, and the bonding layer can be easily formed in a circuit pattern by a screen printing method.
【０００５】しかしながら、（５）の方法で製造された
パワー半導体モジュール基板であっても、窒化アルミニ
ウム基板と銅回路及び／又は放熱銅板との接合強度が不
十分であったり、接合不良が生じていて十分に満足でき
るものではなかった。However, even in the power semiconductor module substrate manufactured by the method (5), the bonding strength between the aluminum nitride substrate and the copper circuit and / or the heat radiation copper plate is insufficient, or the bonding failure occurs. I was not completely satisfied with it.
【０００６】[0006]
【発明が解決しようとする課題】本発明の目的は、上記
問題を解決し、十分な接合強度を有し、接合不良も生じ
ていないパワー半導体モジュール基板を提供することで
ある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to provide a power semiconductor module substrate which has sufficient bonding strength and has no defective bonding.
【０００７】[0007]
【課題を解決するための手段】すなわち、本発明は、窒
化アルミニウム基板の一方の面に銅回路、その反対面に
放熱銅板が、活性金属の窒化物層と、銀と銅の混合物層
とを含む接合層を介して接合されてなるものであって、
上記銅回路及び上記放熱銅板の酸素含有量がそれぞれ５
０ｐｐｍ以下であることを特徴とするパワー半導体モジ
ュール基板である。That is, according to the present invention, a copper circuit is provided on one surface of an aluminum nitride substrate, and a heat dissipation copper plate is provided on the opposite surface thereof with a nitride layer of an active metal and a mixture layer of silver and copper. A structure that is bonded through a bonding layer containing
The oxygen content of each of the copper circuit and the heat dissipation copper plate is 5
It is a power semiconductor module substrate characterized by being 0 ppm or less.
【０００８】以下、更に詳しく本発明を説明する。The present invention will be described in more detail below.
【０００９】本発明のパワー半導体モジュール基板は、
銀と銅の混合物層と、チタン及び／又はジルコニウムな
どの活性金属の窒化物層とを含む接合層を介して、銅回
路及び放熱銅板と窒化アルミニウム基板とが接合されて
いるものである。このような接合層は、例えば銀と、銅
と、チタン及び／又はジルコニウムなどの活性金属もし
くは水素化チタン等の活性金属の化合物とからなる混合
粉末のペースト（ロウ材）を、窒化アルミニウム基板と
銅部材との間に介在させた後、加熱接合することによっ
て形成させることができる。The power semiconductor module substrate of the present invention is
The copper circuit and the heat radiating copper plate are joined to the aluminum nitride substrate through a joining layer containing a mixture layer of silver and copper and a nitride layer of an active metal such as titanium and / or zirconium. Such a bonding layer is formed by mixing a paste (a brazing material) of a mixed powder of silver, copper, and an active metal such as titanium and / or zirconium or an active metal such as titanium hydride with an aluminum nitride substrate. It can be formed by interposing it with a copper member and then heat-bonding it.
【００１０】本発明のパワー半導体モジュール基板が十
分な接合強度を発現する理由について、その断面観察と
接合層の組成分析を行い検討したところ、窒化アルミニ
ウム基板側から、活性金属の窒化物層、銀と銅の混合物
層、銅回路又は放熱銅板の順となっており、加熱接合の
高温時に形成された上記窒化物層が窒化アルミニウム基
板と上記混合物層との強度を維持していること、また上
記混合層は銅部材を濡らして拡散層を形成することによ
って、銅部材と上記混合物層とが接合していることに基
づいているものであることがわかった。The reason why the power semiconductor module substrate of the present invention exhibits sufficient bonding strength was examined by observing its cross-section and analyzing the composition of the bonding layer. From the aluminum nitride substrate side, a nitride layer of active metal, silver And a mixture layer of copper, a copper circuit or a heat dissipation copper plate, in that order, the nitride layer formed at the time of high temperature of heat bonding maintains the strength of the aluminum nitride substrate and the mixture layer, and It has been found that the mixed layer is based on the bonding of the copper member and the mixture layer by wetting the copper member to form a diffusion layer.
【００１１】更に詳しく検討したところ、上記混合物層
と銅部材との接合状態は、銅部材の酸素含有量に大きく
依存しており、酸素含有量の少ない銅部材ほど接合状態
がよく接合強度も十分であるが、逆に酸素含有量の多い
銅部材を使用すると、加熱接合時に銅部材から酸素が放
出し、それがペースト中の活性金属成分の活性消失ある
いはロウ材金属（銀と銅）を酸化させて溶融の起こらな
い部分を生じさせ、その結果、十分な接合強度が得られ
なかったり、接合の起こらない部分が生じることを見い
だしたものである。As a result of further detailed examination, the bonding state of the mixture layer and the copper member largely depends on the oxygen content of the copper member. The copper member having a lower oxygen content has a better bonding state and a sufficient bonding strength. However, on the contrary, when a copper member with a high oxygen content is used, oxygen is released from the copper member during heating and bonding, which causes the active metal components in the paste to disappear or the brazing metal (silver and copper) to be oxidized. It was found that a portion where melting does not occur is generated, and as a result, sufficient joining strength cannot be obtained or a portion where joining does not occur occurs.
【００１２】窒化アルミニウム基板に銅部材を接合する
方法としては、上記（１）〜（５）の方法がある。
（１）のＤＢＣ法は、Ｃｕ2 Ｏ−Ｏの共晶を利用して接
合するので酸素の介在が必要な方法であるので、酸素を
ある程度含有する銅部材、例えば酸素含有量３００〜４
００ｐｐｍのタフピッチ銅が用いられる。As a method for joining the copper member to the aluminum nitride substrate, there are the above methods (1) to (5).
DBC method (1) is because it is Cu 2 O-O eutectic required use to intervening oxygen since joining method, copper member containing oxygen to some extent, for example, the oxygen content 300-4
00 ppm tough pitch copper is used.
【００１３】また、（２）〜（５）の方法においても、
基本的にはペースト（ロウ材）を介して窒化アルミニウ
ム基板と銅部材を接合するものであるため、銅部材の酸
素含有量がその接合性に大きく影響するはずであるが、
従来、銅部材の酸素含有量と接合性との関連から、使用
できる銅部材の酸素含有量を追求したものはない。Further, in the methods (2) to (5),
Basically, the aluminum nitride substrate and the copper member are bonded to each other via a paste (brazing material), so the oxygen content of the copper member should greatly affect the bondability.
Conventionally, no one has pursued the oxygen content of a copper member that can be used because of the relationship between the oxygen content of the copper member and the bondability.
【００１４】本発明者らは、タフピッチ銅を含め、種
々、酸素含有量の異なる銅部材を用意し、接合性を検討
したところ、銅部材の酸素含有量が５０ｐｐｍ以下でな
いと銅部材とロウ材の接合性が十分に起こらず、好まし
い酸素含有量は３０ｐｐｍ以下であること、１００ｐｐ
ｍ程度の酸素含有量の銅部材では一部接合しない部分が
発生すること、更には３００〜４００ｐｐｍの酸素含有
量を有するタフピッチ銅では全く接合しないことを見い
だしたものである。The present inventors prepared various copper members having different oxygen contents, including tough pitch copper, and examined the bondability. When the oxygen contents of the copper member were not less than 50 ppm, the copper member and the brazing material. Does not occur sufficiently and the preferred oxygen content is 30 ppm or less, 100 pp
It has been found that in a copper member having an oxygen content of about m, some unbonded portions are generated, and further, tough pitch copper having an oxygen content of 300 to 400 ppm does not bond at all.
【００１５】本発明のパワー半導体モジユール基板を製
造するに際し、銀粉末と銅粉末の混合比は、重量割合
で、銀６０〜８０％、銅４０〜２０％が好ましく採用さ
れる。この混合比は、後の熱処理工程における処理温度
により任意に選択されるが、処理温度の低下及び接合強
度の向上の点から、銀７２％、銅２８％のいわゆる共晶
組成が最適である。チタン及び／又はジルコニウムなど
の活性金属粉もしくはこの活性金属を含む化合物粉の量
は、銀と銅の混合粉末１００重量部に対し活性金属成分
換算で５〜２０重量部が好ましい。これらの中でも、チ
タンの水素化物が好適である。In producing the power semiconductor module substrate of the present invention, the mixing ratio of silver powder and copper powder is preferably 60 to 80% silver and 40 to 20% copper in weight ratio. This mixing ratio is arbitrarily selected depending on the treatment temperature in the subsequent heat treatment step, but a so-called eutectic composition of 72% silver and 28% copper is optimal from the viewpoint of lowering the treatment temperature and improving the bonding strength. The amount of the active metal powder such as titanium and / or zirconium or the compound powder containing this active metal is preferably 5 to 20 parts by weight in terms of the active metal component based on 100 parts by weight of the mixed powder of silver and copper. Among these, titanium hydride is preferable.
【００１６】これらの混合粉末を窒化アルミニウム基板
上に塗布するには、通常、混合粉末をペースト化して行
われる。ペーストの調製は、有機溶剤、例えばメチルセ
ルソルブ、エチルセルソルブ、テルピネオール、トルエ
ン等や、有機結合剤、例えばエチルセルローズ、メチル
セルローズ、ＰＭＭＡ等が用いられる。Application of these mixed powders onto an aluminum nitride substrate is usually carried out by forming the mixed powder into a paste. For the preparation of the paste, an organic solvent such as methyl cellosolve, ethyl cellosolve, terpineol, toluene or the like, and an organic binder such as ethyl cellulose, methyl cellulose or PMMA are used.
【００１７】ペーストの配合例を示せば、有機溶剤６０
〜７０容量部、上記混合粉末１８〜３０容量部及び有機
結合剤０〜２０容量部で、これらの合計が１００容量部
である。ペーストの粘度としては、１００００〜１００
０００ｃｐｓ程度である。An example of the paste formulation is organic solvent 60.
˜70 parts by volume, 18 to 30 parts by volume of the mixed powder, and 0 to 20 parts by volume of the organic binder, and the total of these is 100 parts by volume. The viscosity of the paste is 10,000-100
It is about 000 cps.
【００１８】本発明で使用される窒化アルミニウム基板
としては、公知の方法で製造されたものを使用すること
ができ、その一例を示せば、焼結助剤を添加せずにホッ
トプレス法で焼結したもの、イットリア、カルシア等の
焼結助剤を窒化アルミニウム粉末に添加し常圧焼結した
ものなどである。As the aluminum nitride substrate used in the present invention, a substrate manufactured by a known method can be used. If one example is shown, it is baked by a hot pressing method without adding a sintering aid. Examples of the binder include a binder, a sintering aid such as yttria and calcia, which is added to aluminum nitride powder and sintered under normal pressure.
【００１９】次に、本発明のパワー半導体モジユール基
板の製造法の一例を説明する。Next, an example of a method for manufacturing the power semiconductor module substrate of the present invention will be described.
【００２０】（ａ）窒化アルミニウム基板の表面に、上
記ペーストをスクリーン印刷法等で回路パターン状に塗
布する。一方、窒化アルミニウム基板の裏面には放熱銅
板を接合するために上記ペーストをほぼ全面に塗布す
る。(A) On the surface of an aluminum nitride substrate, the above paste is applied in a circuit pattern by screen printing or the like. On the other hand, on the back surface of the aluminum nitride substrate, the above-mentioned paste is applied to almost the entire surface in order to bond the heat dissipation copper plate.
【００２１】（ｂ）表側には、銅回路を形成させるた
め、回路パターンと同形状もしくは回路パターン全面を
覆える面積を有しかつ本発明に係る酸素含有量を有する
銅部材をペースト塗布面上に配置する。一方、裏側にも
本発明に係る酸素含有量を有する銅部材をペースト塗布
面上に配置する。(B) To form a copper circuit on the front side, a copper member having the same shape as the circuit pattern or an area covering the entire surface of the circuit pattern and having an oxygen content according to the present invention is formed on the paste application surface. To place. On the other hand, a copper member having the oxygen content according to the present invention is also arranged on the back side on the paste application surface.
【００２２】（Ｃ）上記（ｂ）の積層体をＡｒ、Ｈｅ、
Ｎ2 等の不活性雰囲気中もしくは真空中、温度８００〜
９５０℃で加熱処理をして接合体を製造する。昇温速度
は、１０℃／分以下好ましくは５℃／分以下であり、昇
温速度が速いと、ペースト中に含まれる炭素が高温まで
残留し、接合強度の弱いパワー半導体モジユール基板と
なりやすい。(C) Ar, He, and
In an inert atmosphere such as N 2 or in a vacuum, a temperature of 800 to
Heat treatment is performed at 950 ° C. to manufacture a joined body. The heating rate is 10 ° C./minute or less, preferably 5 ° C./minute or less. When the heating rate is fast, carbon contained in the paste remains at a high temperature, and a power semiconductor module substrate with weak bonding strength is likely to be obtained.
【００２３】（ｄ）上記（ｂ）において、回路パターン
と同形状の銅部材を配置したものは、接合後、そのまま
銅回路と放熱銅板を有するパワー半導体モジユール基板
となる。また、回路パターン全面を覆える面積を有する
銅部材を配置した場合は、接合後、エッチング法により
不要な銅部分を除去して銅回路を形成させる。(D) In (b), the copper member having the same shape as that of the circuit pattern is arranged to be a power semiconductor module substrate having a copper circuit and a heat radiation copper plate after bonding. When a copper member having an area capable of covering the entire surface of the circuit pattern is arranged, an unnecessary copper portion is removed by an etching method after the joining to form a copper circuit.
【００２４】[0024]
【実施例】以下、実施例と比較例をあげて、更に具体的
に本発明を説明する。EXAMPLES The present invention will be described more specifically with reference to Examples and Comparative Examples.
【００２５】実施例１〜８ 銀粉末７２重量％、銅粉末２８重量％からなる混合粉末
１００重量部に対し、チタン粉末及び水素化チタン粉末
を各々１０重量部ないし２０重量部を添加した後、ＰＭ
ＭＡを１．０重量部とテルピネオールを加え、十分に混
合し、ペーストを調製した。Examples 1 to 8 After adding 10 to 20 parts by weight of titanium powder and titanium hydride powder to 100 parts by weight of a mixed powder consisting of 72% by weight of silver powder and 28% by weight of copper powder, respectively, PM
1.0 part by weight of MA and terpineol were added and thoroughly mixed to prepare a paste.
【００２６】このペーストを５０ｍｍ×５０ｍｍ×厚み
０．６３５ｍｍの窒化アルミニウム基板の表裏両面にス
クリーン印刷した後、乾燥した。その際、片面（裏面）
はほぼ全面に、もう一方の面（表面）は半導体素子を搭
載する銅回路を形成させるために島状に印刷した。This paste was screen-printed on both sides of an aluminum nitride substrate having a size of 50 mm × 50 mm × a thickness of 0.635 mm and then dried. At that time, one side (back side)
Was printed on almost the entire surface, and the other surface (front surface) was printed in an island shape in order to form a copper circuit for mounting a semiconductor element.
【００２７】次いで、酸素含有量が３０ｐｐｍ又は５０
ｐｐｍで、しかもペースト塗布位置と同形状の銅板を接
触配置した後、真空中、９００℃で１時間熱処理し、窒
化アルミニウム基板の表面に銅回路、裏面に放熱銅板を
形成させたパワー半導体モジユール基板を製造した。な
お、銅板の酸素含有量は、ＬＥＣＯ社製酸素分析計「Ｒ
Ｏ−１８」を使用し、溶融抽出法にて測定した。Next, the oxygen content is 30 ppm or 50
A power semiconductor module board in which a copper plate having a ppm and the same shape as the paste application position is placed in contact, and then heat-treated in vacuum at 900 ° C. for 1 hour to form a copper circuit on the front surface of the aluminum nitride substrate and a heat dissipation copper plate on the back surface. Was manufactured. The oxygen content of the copper plate is the oxygen analyzer "R" manufactured by LECO.
"O-18" was used and the measurement was performed by the melt extraction method.
【００２８】得られたパワー半導体モジユール基板の銅
回路及び放熱銅板を剥がし、剥離した状態を観察するこ
とによって接合性を評価した。それらの結果を表１に示
す。また、パワー半導体モジユール基板の接合断面を走
査型電子顕微鏡により観察したところ、いずれも、窒化
アルミニウム基板側から、チタンの窒化物層、銀と銅の
混合物層、銅回路又は放熱銅板の順となっていた。The copper circuit and the heat dissipation copper plate of the obtained power semiconductor module substrate were peeled off, and the peeled state was observed to evaluate the bondability. Table 1 shows the results. In addition, when observing the bonding cross section of the power semiconductor module substrate with a scanning electron microscope, in each case, from the aluminum nitride substrate side, the titanium nitride layer, the mixture layer of silver and copper, the copper circuit or the heat dissipation copper plate were sequentially ordered. Was there.
【００２９】比較例１〜８ 酸素含有量が１００ｐｐｍ又は３００ｐｐｍである銅板
を用いたこと以外は、実施例１〜８と同様にしてパワー
半導体モジユール基板を製造した。それらの接合性の観
察結果を表１に示す。Comparative Examples 1-8 Power semiconductor module substrates were manufactured in the same manner as in Examples 1-8 except that a copper plate having an oxygen content of 100 ppm or 300 ppm was used. Table 1 shows the results of the observation of their bondability.
【００３０】[0030]
【表１】 [Table 1]
【００３１】[0031]
【発明の効果】本発明によれば、接合性の良好なパワー
半導体モジユール基板が得られる。According to the present invention, a power semiconductor module substrate having good bondability can be obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 加藤 和男 東京都町田市旭町３丁目５番１号 電気化 学工業株式会社総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Kato 3-5-1, Asahimachi, Machida-shi, Tokyo Denka Kagaku Kogyo Co., Ltd.
Claims (1)
路、その反対面に放熱銅板が、活性金属の窒化物層と、
銀と銅の混合物層とを含む接合層を介して接合されてな
るものであって、上記銅回路及び上記放熱銅板の酸素含
有量がそれぞれ５０ｐｐｍ以下であることを特徴とする
パワー半導体モジュール基板。1. A copper circuit is provided on one surface of an aluminum nitride substrate, and a heat-dissipating copper plate is provided on the opposite surface thereof, and a nitride layer of an active metal,
A power semiconductor module substrate, which is bonded through a bonding layer including a mixture layer of silver and copper, and has an oxygen content of 50 ppm or less in each of the copper circuit and the heat dissipation copper plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32368096A JPH09191059A (en) | 1996-12-04 | 1996-12-04 | Power semiconductor module substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32368096A JPH09191059A (en) | 1996-12-04 | 1996-12-04 | Power semiconductor module substrate |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1250484A Division JPH07114316B2 (en) | 1989-09-28 | 1989-09-28 | Method for manufacturing aluminum nitride substrate having copper circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09191059A true JPH09191059A (en) | 1997-07-22 |
Family
ID=18157411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32368096A Pending JPH09191059A (en) | 1996-12-04 | 1996-12-04 | Power semiconductor module substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09191059A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274534A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | Ceramics copper circuit board and method for manufacturing the same |
| WO2008149818A1 (en) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | Laminated heat dissipating base body, and heat dissipating unit and electronic device using the laminated heat dissipating base body |
| CN103282546A (en) * | 2010-11-19 | 2013-09-04 | 日本发条株式会社 | Laminate and method for producing laminate |
-
1996
- 1996-12-04 JP JP32368096A patent/JPH09191059A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274534A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | Ceramics copper circuit board and method for manufacturing the same |
| WO2008149818A1 (en) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | Laminated heat dissipating base body, and heat dissipating unit and electronic device using the laminated heat dissipating base body |
| JP5144657B2 (en) * | 2007-05-30 | 2013-02-13 | 京セラ株式会社 | Laminated heat dissipation base, heat dissipation unit using the same, and electronic device |
| CN103282546A (en) * | 2010-11-19 | 2013-09-04 | 日本发条株式会社 | Laminate and method for producing laminate |
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