JPH02966A - Reticle cleaning device - Google Patents
Reticle cleaning deviceInfo
- Publication number
- JPH02966A JPH02966A JP63139848A JP13984888A JPH02966A JP H02966 A JPH02966 A JP H02966A JP 63139848 A JP63139848 A JP 63139848A JP 13984888 A JP13984888 A JP 13984888A JP H02966 A JPH02966 A JP H02966A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- cleaning
- dedicated
- megasonic
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 239000000428 dust Substances 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 5
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 230000032258 transport Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 12
- 239000007787 solid Substances 0.000 abstract description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 235000002918 Fraxinus excelsior Nutrition 0.000 abstract 1
- 239000002956 ash Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造工程のフォトリソグラフィー工程に
おける縮小投影露光装置に使用される所望のパターンを
備えたガラスマスク（以下、レチクルと呼ぶ）の洗浄を
行う装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is for cleaning a glass mask (hereinafter referred to as a reticle) provided with a desired pattern used in a reduction projection exposure apparatus in a photolithography process of a semiconductor manufacturing process. The present invention relates to a device that performs this.
従来、レチクル洗浄は酸溶液等の洗浄液及び純水、アル
コール等のリンス液に浸し洗浄する薬品洗浄又は、洗浄
液を散布しながら回転ブラシを接触させるブラシ洗浄等
を利用し装置化したものとなっていた。Conventionally, reticle cleaning has been done using equipment such as chemical cleaning in which the reticle is immersed in a cleaning solution such as an acid solution and a rinsing solution such as pure water or alcohol, or brush cleaning in which a rotating brush is brought into contact with the reticle while spraying the cleaning solution. Ta.
従来のレチクル洗浄装置において、薬品洗浄は酸溶液等
の危険性が高い薬品を使用する為、取扱いが困難であり
安全性を確保する為、薬品の給廃液施設及び安全対策等
、周辺施設１機能が必要となり装置規模が大きく高価な
ものとなってしまう。In conventional reticle cleaning equipment, chemical cleaning uses highly dangerous chemicals such as acid solutions, which are difficult to handle.In order to ensure safety, peripheral facilities such as chemical supply and drainage facilities and safety measures are required , which makes the equipment large and expensive.
又、その処理能力からバッチ処理の形式となり、縮小投
影露光装置で使用される専用レチクルケースでの直接的
対応は困難なものとなっている。Further, due to its processing capacity, it is a batch process, and it is difficult to directly handle it with a dedicated reticle case used in a reduction projection exposure apparatus.
又、ブラシ洗浄においては、固体的に回転ブラシがレチ
クルに接触し擦れが起こる為、レチクルパターンに微細
な損傷を与えてしまう場合がある。Furthermore, in brush cleaning, the rotating brush comes into solid contact with the reticle and causes friction, which may cause minute damage to the reticle pattern.
さらに、経時的にブラシ材料が摩擦し微細な塵埃が発生
するという問題がある。Furthermore, there is a problem in that the brush material rubs against each other over time and generates fine dust.
従来のレチクル洗浄装置に対し、本発明のレチクル洗浄
装置は紫外線照射による有機物洗浄機能とメガソニック
振動を発生する洗浄液吐出ノズルによる流水洗浄機能を
備えたものであり、危険性の高い薬品の使用及び固体的
な接触を回避したものである。In contrast to conventional reticle cleaning devices, the reticle cleaning device of the present invention is equipped with an organic matter cleaning function using ultraviolet irradiation and a running water cleaning function using a cleaning liquid discharge nozzle that generates megasonic vibrations, which eliminates the use of highly dangerous chemicals and This avoids solid contact.
本発明のレチクル洗浄装置は、レチクルに対し２００
ｎｍ前後の紫外線を照射しオゾン発生による有機物質塵
埃の灰化洗浄を行う紫外線照射処理部と１．８ＭＨｚ前
後のメガソニック振動を発生するノズルからレチクル面
へ洗浄液を吐出し、その振動エネルギーにより洗浄液の
吐出部を物理的に洗浄するメガソニック洗浄処理部とフ
レオン、又は、ＩＰＡ等の溶剤蒸気雰囲気へレチクルを
浸し、冷却凝縮層を通し、引き上げることにより清浄な
状態で乾燥する溶剤蒸気冷却乾燥処理部とレチクル面に
レーザビームを走査照射し、その散乱反射光により塵埃
検出を行う塵埃検出部とレチクルが収納されている専用
レチクルケースから搬出し、各処理、検出部を通し、専
用レチクルケースへ戻し収納する一連の搬送動作を行う
レチクル搬送機構を有している。The reticle cleaning device of the present invention can clean the reticle by
A cleaning liquid is discharged onto the reticle surface from an ultraviolet irradiation processing unit that irradiates ultraviolet rays of around nm to ash and clean organic dust by generating ozone, and a nozzle that generates megasonic vibrations of around 1.8 MHz. A megasonic cleaning processing unit that physically cleans the discharge part of the reticle, and a solvent vapor cooling drying process that dries the reticle in a clean state by immersing the reticle in a solvent vapor atmosphere such as Freon or IPA, passing it through a cooling condensation layer, and pulling it up. The dust detection unit and reticle, which scans and irradiates the reticle surface with a laser beam and detects dust using the scattered reflected light, is removed from the dedicated reticle case that houses the reticle, passes through various processing and detection units, and is placed in the dedicated reticle case. It has a reticle transport mechanism that performs a series of transport operations to return and store the reticle.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の概略構成図である。FIG. 1 is a schematic diagram of an embodiment of the present invention.
本発明によるレチクル洗浄装置は、レチクル７表裏全面
に２００ ｎｍ前後の波長の紫外線を照射しオゾン発生
による有機物質塵埃の灰化洗浄を行う紫外線照射処理部
１と、１．８ＭＨｚ前後のメガソニック振動を発生し、
レチクル引き上げ方向に対し直交方向に走査移動する機
能を備えた洗浄液吐出ノズルをレチクル７引裏面両側に
設は洗浄液を吐出しながらレチクル７引き上げ動作と同
期し吐出ノズルを走査移動することにより、メガソニッ
ク振動エネルギーで、レチクル７表裏全面を物理的に洗
浄するメガソニック洗浄処理部２と、ＩＰＡ、フレオン
等の溶剤蒸気を発生させ、その溶剤蒸気雰囲気中にレチ
クル７引体を浸した後、冷却凝縮層を通し、引き上げる
ことによりレチクル７を乾燥させる溶剤蒸気冷却乾燥処
理部３と、レチクル７引裏両面にレーザビームを走査照
射し、その散乱反射光によりレチクル７引裏面の塵埃を
検出する塵埃検出部４と、縮小投影露光装置で使用され
る専用レチクルケースを所定位置に搭載する専用レチク
ルケース搭載部５と、専用レチクルケースからレチクル
７を搬出し、各処理、検出部を通し、専用レチクルケー
スへ戻し収納する一連の搬送動作を行うレチクル搬送機
構６と、上述した全ての構成要素を連動し制御する制御
部より構成されたものである。The reticle cleaning device according to the present invention includes an ultraviolet irradiation processing unit 1 that irradiates the entire front and back surfaces of a reticle 7 with ultraviolet rays with a wavelength of around 200 nm to ash and clean organic material dust due to ozone generation, and a megasonic vibration of around 1.8 MHz. occurs,
Cleaning liquid discharge nozzles with the function of scanning and moving in a direction perpendicular to the reticle lifting direction are installed on both sides of the back surface of the reticle 7. By discharging cleaning liquid and scanning the discharge nozzles in synchronization with the reticle 7 lifting operation, megasonic The megasonic cleaning processing unit 2 uses vibration energy to physically clean the entire front and back surfaces of the reticle 7, generates solvent vapor such as IPA or Freon, immerses the reticle 7 in the solvent vapor atmosphere, and then cools and condenses it. A solvent vapor cooling drying processing unit 3 that dries the reticle 7 by pulling it up through the layer, and a dust detection unit that scans and irradiates both sides of the back side of the reticle 7 with a laser beam and detects dust on the back side of the reticle 7 using the scattered reflected light. 4, a dedicated reticle case mounting section 5 in which a dedicated reticle case used in a reduction projection exposure device is mounted in a predetermined position, and a reticle 7 is carried out from the dedicated reticle case, passes through various processing and detection sections, and is then placed in the dedicated reticle case. It is comprised of a reticle transport mechanism 6 that performs a series of transport operations for returning and storing the reticle, and a control section that interlocks and controls all of the above-mentioned components.
尚、メガソニック洗浄処理部で使用する洗浄液は化学的
洗浄効果を期待した薬品である必要は無く、純水あるい
は静電気発生を制御する為の添加材（アンモニア等）を
混入した水溶液等の安全で取扱いの容易なもので十分で
ある。Note that the cleaning liquid used in the megasonic cleaning processing unit does not have to be a chemical expected to have a chemical cleaning effect; it can be a safe solution such as pure water or an aqueous solution mixed with additives (ammonia, etc.) to control the generation of static electricity. A material that is easy to handle is sufficient.
前述した第一の実施例に対し、構成要素として純水及び
ＩＰＡ等の溶剤によるシャワー洗浄機能及び処理部を付
加し、洗浄処理効果の向上を計ったものも、本発明の範
囲に含まれるものである。An embodiment in which a shower cleaning function and processing section using pure water and a solvent such as IPA are added as constituent elements to the first embodiment described above to improve the cleaning processing effect is also included within the scope of the present invention. It is.
以上説明したように本発明によるレチクル洗浄装置を採
用することにより、危険性の高い薬品の使用を回避し、
又、洗浄処理においてレチクル面への固体的な接触を皆
無としたレチクル洗浄装置を実現し、半導体製造工程に
おける設備投資効果を向上し、又、レチクル損傷及び微
細塵埃発生等による不良発生の低減に多大な効果がある
。As explained above, by adopting the reticle cleaning device according to the present invention, the use of highly dangerous chemicals can be avoided,
In addition, we have realized a reticle cleaning device that eliminates any solid contact with the reticle surface during the cleaning process, improving the effectiveness of equipment investment in the semiconductor manufacturing process, and reducing the occurrence of defects due to reticle damage and generation of fine dust. It has a huge effect.
第１図は、本発明によるレチクル洗浄装置の概略構成図
である。
１・・・・・・紫外線照射処理部、２・・・・・・メガ
ソニック洗浄処理部、３・・・・・・溶剤蒸気冷却乾燥
処理部、４・・・・・・塵埃検出部、５・・・・・・専
用レチクルケース搭載部、６・・・・・・レチクル搬送
機構、７・・・・・・レチクル。
代理人 弁理士 内 原 音FIG. 1 is a schematic diagram of a reticle cleaning device according to the present invention. 1... Ultraviolet irradiation processing section, 2... Megasonic cleaning processing section, 3... Solvent vapor cooling and drying processing section, 4... Dust detection section, 5... Dedicated reticle case mounting section, 6... Reticle transport mechanism, 7... Reticle. Agent Patent Attorney Oto Uchihara
Claims (1)
いて、レチクルに対し、紫外線照射処理機能およびメガ
ソニック振動発生機能を備えた洗浄液吐出ノズルによる
流水洗浄処理機能と、溶剤蒸気冷却による乾燥処理機能
と、レーザビーム走査照射による塵埃検出機能と、専用
レチクルケースから各処理部への搬送及び専用レチクル
ケースへ戻し収納を行う搬送機構とを有するレチクル洗
浄装置。In the reticle cleaning process used in a reduction projection exposure apparatus, the reticle is cleaned with running water using a cleaning liquid discharge nozzle equipped with an ultraviolet irradiation function and a megasonic vibration generation function, and a drying process using solvent vapor cooling. A reticle cleaning device that has a dust detection function using laser beam scanning irradiation and a transport mechanism that transports the reticle from a dedicated reticle case to each processing section and returns it to the dedicated reticle case for storage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13984888A JPH0675187B2 (en) | 1988-06-06 | 1988-06-06 | Reticle cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13984888A JPH0675187B2 (en) | 1988-06-06 | 1988-06-06 | Reticle cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02966A true JPH02966A (en) | 1990-01-05 |
| JPH0675187B2 JPH0675187B2 (en) | 1994-09-21 |
Family
ID=15254938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13984888A Expired - Lifetime JPH0675187B2 (en) | 1988-06-06 | 1988-06-06 | Reticle cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0675187B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0430513A (en) * | 1990-05-28 | 1992-02-03 | Nec Kyushu Ltd | Reduction projection aligner |
| JPH04109247A (en) * | 1990-08-30 | 1992-04-10 | Nec Kyushu Ltd | Reticle cleaning device |
| JPH04186351A (en) * | 1990-11-21 | 1992-07-03 | Nec Kyushu Ltd | Cleaning of reticle |
| JPH04298747A (en) * | 1991-03-28 | 1992-10-22 | Nec Corp | Washing method for photomask |
| US7001470B2 (en) * | 2001-04-18 | 2006-02-21 | Renesas Technology Corp. | Cleaning process for photomasks |
| JP2009122313A (en) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | Method for cleaning mask substrate |
| JP2012137676A (en) * | 2010-12-27 | 2012-07-19 | Hoya Corp | Method of manufacturing substrate for mask blank, method of manufacturing mask blank, method of manufacturing transfer mask, and cleaning method of transfer mask |
| JP2012211951A (en) * | 2011-03-30 | 2012-11-01 | Shin Etsu Chem Co Ltd | Method and device for cleaning photomask-related substrate |
| CN117644074A (en) * | 2024-01-30 | 2024-03-05 | 深圳市龙图光罩股份有限公司 | Mask cleaning method, device, terminal equipment and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5153766A (en) * | 1974-11-07 | 1976-05-12 | Kaijo Denki Kk | NOZURUGATACHOONPASENJOSOCHI |
| JPS61144830A (en) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | Cleaning device |
| JPS61147534A (en) * | 1984-12-21 | 1986-07-05 | Shimada Phys & Chem Ind Co Ltd | Supersonic chemical treating method |
-
1988
- 1988-06-06 JP JP13984888A patent/JPH0675187B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5153766A (en) * | 1974-11-07 | 1976-05-12 | Kaijo Denki Kk | NOZURUGATACHOONPASENJOSOCHI |
| JPS61144830A (en) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | Cleaning device |
| JPS61147534A (en) * | 1984-12-21 | 1986-07-05 | Shimada Phys & Chem Ind Co Ltd | Supersonic chemical treating method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0430513A (en) * | 1990-05-28 | 1992-02-03 | Nec Kyushu Ltd | Reduction projection aligner |
| JPH04109247A (en) * | 1990-08-30 | 1992-04-10 | Nec Kyushu Ltd | Reticle cleaning device |
| JPH04186351A (en) * | 1990-11-21 | 1992-07-03 | Nec Kyushu Ltd | Cleaning of reticle |
| JPH04298747A (en) * | 1991-03-28 | 1992-10-22 | Nec Corp | Washing method for photomask |
| US7001470B2 (en) * | 2001-04-18 | 2006-02-21 | Renesas Technology Corp. | Cleaning process for photomasks |
| JP2009122313A (en) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | Method for cleaning mask substrate |
| JP2012137676A (en) * | 2010-12-27 | 2012-07-19 | Hoya Corp | Method of manufacturing substrate for mask blank, method of manufacturing mask blank, method of manufacturing transfer mask, and cleaning method of transfer mask |
| JP2012211951A (en) * | 2011-03-30 | 2012-11-01 | Shin Etsu Chem Co Ltd | Method and device for cleaning photomask-related substrate |
| CN117644074A (en) * | 2024-01-30 | 2024-03-05 | 深圳市龙图光罩股份有限公司 | Mask cleaning method, device, terminal equipment and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0675187B2 (en) | 1994-09-21 |
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