JPH04186351A - Cleaning of reticle - Google Patents
Cleaning of reticleInfo
- Publication number
- JPH04186351A JPH04186351A JP2316964A JP31696490A JPH04186351A JP H04186351 A JPH04186351 A JP H04186351A JP 2316964 A JP2316964 A JP 2316964A JP 31696490 A JP31696490 A JP 31696490A JP H04186351 A JPH04186351 A JP H04186351A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- cleaning
- cleaning liquid
- cleanliness
- arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 40
- 239000000428 dust Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 8
- 230000003749 cleanliness Effects 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程に用いるレチクルの洗浄
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaning a reticle used in a manufacturing process of a semiconductor device.
従来のレチクルの洗浄方法は洗浄液を流しながら一定方
向に回転をつづける洗浄ブラシにレチクルの表面が触れ
る様にしながらレチクルを上下に移動させ、レチクル表
面を洗浄していた。In the conventional reticle cleaning method, the reticle surface was cleaned by moving the reticle up and down so that the surface of the reticle was in contact with a cleaning brush that continued to rotate in a fixed direction while flowing a cleaning solution.
従来のレチクルの洗浄方法は、洗浄ブラシにより、レチ
クルの表面に付着した塵埃、汚れを物理的に除去させよ
うとするものであるが、微小なごみでは、ブラシが一定
方向に回転している為、レチクルのクローム面のパター
ンエツジの片側にごみがトラップされて除去されない場
合や、有機物では、レチクル表面が捩水状態である為、
洗浄液とのなじみが悪くなり、完全には除去されない場
合があるなど、レチクル表面の清浄度が充分でないとい
う問題点があった。その為、この様なレチクルを使用し
て半導体基板上に投影縮小露光した場合には、形成され
たパターンには、パターンショートなどの欠陥を生じて
半導体装置の歩留や信頼性が低下するという問題点があ
った。Conventional reticle cleaning methods use a cleaning brush to physically remove dust and dirt adhering to the reticle surface, but when it comes to small particles, the brush rotates in a fixed direction. If dirt is trapped on one side of the pattern edge of the chrome surface of the reticle and cannot be removed, or if it is organic matter, the reticle surface is in a water-twisted state.
There was a problem that the cleanliness of the reticle surface was not sufficient, such as poor compatibility with the cleaning solution and complete removal in some cases. Therefore, when such a reticle is used to perform projection reduction exposure on a semiconductor substrate, defects such as pattern shorts may occur in the formed pattern, reducing the yield and reliability of semiconductor devices. There was a problem.
本発明の目的は、レチクルの洗浄度を向上させるレチク
ルの洗浄方法を提供することにある。An object of the present invention is to provide a reticle cleaning method that improves the degree of reticle cleaning.
本発明のレチクル洗浄方法は、洗浄液を流しなから洗浄
ブラシによりレチクル表面を洗浄し塵埃や汚れを除去す
る工程を有するレチクルの洗浄方法に於いて、前記レチ
クルの表面及び裏面に紫外線を照射する工程を含んで構
成される。The reticle cleaning method of the present invention includes a step of cleaning the reticle surface with a cleaning brush to remove dust and dirt without flowing a cleaning solution, and a step of irradiating the front and back surfaces of the reticle with ultraviolet rays. It consists of:
・、実施例〕 次に本発明について図面を参照して説明する。·,Example〕 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例を示す模式図である。FIG. 1 is a schematic diagram showing an embodiment of the present invention.
第1図に示すように、レチクルアーム4に支持されたレ
チクル3はまず前処理として紫外線照射ボックス14中
に取り込まれ、紫外線ランプ6にて一定時間照射される
。この間、紫外線照射ボックス14内は03が発生する
ので排気管13で、03の排気を行なう。次に、レチク
ル3は、レチクル洗浄ボックス15内に移され、洗浄液
11をレチクル3の表面に流しながら、洗浄ブラシ2を
回転させてレチクルの表面をこすり、且つレチクルアー
ム4を上下させてレチクル3の表面を洗浄した後純水を
流しながら洗浄ブラシ2でこすり洗浄液1を除去する。As shown in FIG. 1, the reticle 3 supported by the reticle arm 4 is first taken into an ultraviolet irradiation box 14 as a pretreatment and is irradiated with an ultraviolet lamp 6 for a certain period of time. During this time, since 03 is generated inside the ultraviolet irradiation box 14, the 03 is exhausted through the exhaust pipe 13. Next, the reticle 3 is moved into the reticle cleaning box 15, and while the cleaning liquid 11 is flowing onto the surface of the reticle 3, the cleaning brush 2 is rotated to scrub the surface of the reticle, and the reticle arm 4 is moved up and down to clean the reticle 3. After cleaning the surface, the cleaning liquid 1 is removed by rubbing with a cleaning brush 2 while running pure water.
次に、レチクル3は、乾燥ボックス12内に移され、ア
ルコール蒸気にてし千クル3の表面の水分を取り去り表
面の乾燥を行なう。Next, the reticle 3 is moved into a drying box 12, and the moisture on the surface of the reticle 3 is removed using alcohol vapor to dry the surface.
以上説明したように本発明は、洗浄に先立ちレチクル表
面を紫外線照射することにより、撥水性を示していた表
面は、化学的に有機物か分解されて、親水性となり、洗
浄液とのなじみか向上し、パターンエツジ部に付着して
いた塵埃を容易に除去することができるようになった。As explained above, in the present invention, by irradiating the reticle surface with ultraviolet rays prior to cleaning, the water-repellent surface chemically decomposes organic substances, becomes hydrophilic, and improves compatibility with the cleaning liquid. It became possible to easily remove dust adhering to the pattern edges.
同時に前に述べた様に油汚れも分解することができる。At the same time, as mentioned earlier, oil stains can also be broken down.
これらを効果に加え、物理的に洗浄ブラシを用いレチク
ル表面を洗浄処理をほどこすことによる相乗効果でレチ
クル表面の清浄度を向上させることができるという効果
を有する。これらの効果により半導体基板上に投影縮小
露光されるパターンの欠陥を低減することができ、IC
の歩留や品質を向上させることができる。In addition to these effects, the cleanliness of the reticle surface can be improved by the synergistic effect of physically cleaning the reticle surface using a cleaning brush. These effects make it possible to reduce defects in the pattern projected and reduced by exposure on the semiconductor substrate, and the IC
can improve yield and quality.
第1図は本発明の一実施例を示す模式図である9
1・・・洗浄液、2・・・洗浄ブラシ、3・・・レチク
ル、4・・・レチクル運搬アーム、5・・・洗浄液排出
管、6・・・紫外線ランプ、7・・・純水、8・・・ヒ
ータ、9・・・アルコール、10・・・アルコール排出
管、11・・・冷却管、12・・・乾燥ボックス、13
・・・排気管、14・・・紫外線照射ボックス、15・
・・レチクル洗浄ボックス。
代理人 弁理士 内 原 音
月 1 図FIG. 1 is a schematic diagram showing an embodiment of the present invention 9 1...Cleaning liquid, 2...Cleaning brush, 3...Reticle, 4...Reticle carrying arm, 5...Cleaning liquid discharge Tube, 6... Ultraviolet lamp, 7... Pure water, 8... Heater, 9... Alcohol, 10... Alcohol discharge pipe, 11... Cooling tube, 12... Drying box, 13
...Exhaust pipe, 14...Ultraviolet irradiation box, 15.
...Reticle cleaning box. Agent Patent Attorney Otsuki Uchihara 1 Figure
Claims (1)
浄し塵埃や汚れを除去する工程を有するレチクルの洗浄
方法に於いて、前記レチクルの表面及び裏面に紫外線を
照射する工程を含むことを特徴とするレチクルの洗浄方
法。A reticle cleaning method comprising the step of cleaning the reticle surface with a cleaning brush to remove dust and dirt while flowing a cleaning solution, the reticle cleaning method comprising the step of irradiating the front and back surfaces of the reticle with ultraviolet rays. Cleaning method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2316964A JPH04186351A (en) | 1990-11-21 | 1990-11-21 | Cleaning of reticle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2316964A JPH04186351A (en) | 1990-11-21 | 1990-11-21 | Cleaning of reticle |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04186351A true JPH04186351A (en) | 1992-07-03 |
Family
ID=18082903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2316964A Pending JPH04186351A (en) | 1990-11-21 | 1990-11-21 | Cleaning of reticle |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04186351A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04298747A (en) * | 1991-03-28 | 1992-10-22 | Nec Corp | Washing method for photomask |
JP2012211951A (en) * | 2011-03-30 | 2012-11-01 | Shin Etsu Chem Co Ltd | Method and device for cleaning photomask-related substrate |
CN114798599A (en) * | 2022-04-15 | 2022-07-29 | 深圳市华星光电半导体显示技术有限公司 | Mask plate cleaning equipment and mask plate cleaning method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63249146A (en) * | 1987-04-03 | 1988-10-17 | Mitsubishi Electric Corp | Mask cleaning device |
JPS63271938A (en) * | 1987-04-28 | 1988-11-09 | Hoya Corp | Cleaning of hard surface |
JPS649618A (en) * | 1987-07-02 | 1989-01-12 | Matsushita Electric Ind Co Ltd | Pattern formation |
JPH02966A (en) * | 1988-06-06 | 1990-01-05 | Nec Corp | Reticle cleaning device |
-
1990
- 1990-11-21 JP JP2316964A patent/JPH04186351A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63249146A (en) * | 1987-04-03 | 1988-10-17 | Mitsubishi Electric Corp | Mask cleaning device |
JPS63271938A (en) * | 1987-04-28 | 1988-11-09 | Hoya Corp | Cleaning of hard surface |
JPS649618A (en) * | 1987-07-02 | 1989-01-12 | Matsushita Electric Ind Co Ltd | Pattern formation |
JPH02966A (en) * | 1988-06-06 | 1990-01-05 | Nec Corp | Reticle cleaning device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04298747A (en) * | 1991-03-28 | 1992-10-22 | Nec Corp | Washing method for photomask |
JP2012211951A (en) * | 2011-03-30 | 2012-11-01 | Shin Etsu Chem Co Ltd | Method and device for cleaning photomask-related substrate |
CN114798599A (en) * | 2022-04-15 | 2022-07-29 | 深圳市华星光电半导体显示技术有限公司 | Mask plate cleaning equipment and mask plate cleaning method |
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