JPH0224995A - Electroluminescence element - Google Patents
Electroluminescence elementInfo
- Publication number
- JPH0224995A JPH0224995A JP63175530A JP17553088A JPH0224995A JP H0224995 A JPH0224995 A JP H0224995A JP 63175530 A JP63175530 A JP 63175530A JP 17553088 A JP17553088 A JP 17553088A JP H0224995 A JPH0224995 A JP H0224995A
- Authority
- JP
- Japan
- Prior art keywords
- emitting layer
- light emitting
- phosphor
- transparent electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 29
- 230000005684 electric field Effects 0.000 abstract description 16
- -1 polyethylene terephthalate Polymers 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 4
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 4
- 230000000284 resting effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 239000011230 binding agent Substances 0.000 description 9
- 229920001218 Pullulan Polymers 0.000 description 4
- 239000004373 Pullulan Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 235000019423 pullulan Nutrition 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野） 本発明はエレクトロルミネセンス素子に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to electroluminescent devices.
分散型のエレクトロルミネセンス素子では、発光層は蛍
光体とバインダーとの混合物からなり、第３図に示すよ
うに、透明電極２上に発光層４が直接形成されていた（
例えば、特開昭５７−８０６９５号公報）。In the dispersion type electroluminescent device, the light emitting layer is made of a mixture of a phosphor and a binder, and as shown in FIG. 3, the light emitting layer 4 is formed directly on the transparent electrode 2 (
For example, Japanese Patent Application Laid-Open No. 57-80695).
〔発明が解決しようとする課題］
しかし、上記エレクトロルミネセンス素子では、蛍光体
の誘電率とバインダーの誘電率とが異なるため、蛍光体
に不均一な電界がかかり、輝度が低くなるという問題が
あった。[Problems to be Solved by the Invention] However, in the above electroluminescent device, since the dielectric constant of the phosphor and the dielectric constant of the binder are different, a non-uniform electric field is applied to the phosphor, resulting in a problem of low brightness. there were.
本発明は、上記のように、従来のエレクトロルミネセン
ス素子では、蛍光体に不均一な電界がかかり、それによ
って輝度が低下したという問題点を解決し、以って高輝
度のエレクトロルミネセンス素子を提供することを目的
とする。As described above, the present invention solves the problem that in conventional electroluminescent devices, a non-uniform electric field is applied to the phosphor, resulting in a reduction in brightness. The purpose is to provide
本発明は、透明電極と発光層との間に比誘電率が２５以
下の酸化物または窒化物からなる絶縁薄膜を５〜１，０
００ｎｍの厚さに設けることによって、蛍光体に不均一
な電界がかかるのを防止して、高輝度を呈し得るように
したものである。The present invention provides an insulating thin film made of an oxide or nitride with a dielectric constant of 25 or less between the transparent electrode and the light emitting layer.
By providing the phosphor with a thickness of 0.00 nm, it is possible to prevent a non-uniform electric field from being applied to the phosphor, thereby making it possible to exhibit high brightness.
すなわち、上記酸化物または窒化物からなる絶縁薄膜を
透明電極と発光層との間に設けることによって、発光層
にかかる電界が上記絶縁薄膜によって規制されるように
なり、従来のように蛍光体の誘電率とバインダーの誘電
率との相違に基づいて蛍光体に不均一な電界がかかるの
が防止され、均一な電界が蛍光体にかかるようになって
、エレクトロルミネセンス素子が高輝度を呈するように
なる。また、上記絶縁薄膜によって蛍光体と透明電極と
が接触しなくなり、発光時に蛍光体と透明電極との接触
部分で過大電流が流れて発光効率が低下するのが防止さ
れるようになり、この面からも輝度が向上する。That is, by providing an insulating thin film made of the above oxide or nitride between the transparent electrode and the light-emitting layer, the electric field applied to the light-emitting layer is regulated by the insulating thin film, and the phosphor is Based on the difference between the dielectric constant and the dielectric constant of the binder, a non-uniform electric field is prevented from being applied to the phosphor, and a uniform electric field is applied to the phosphor, so that the electroluminescent device exhibits high brightness. become. In addition, the insulating thin film prevents contact between the phosphor and the transparent electrode, and prevents excessive current from flowing at the contact area between the phosphor and the transparent electrode during light emission and reducing luminous efficiency. Brightness also improves.
つぎに本発明のエレクトロルミネセンス素子の構成を図
面を参照しつつ説明する。Next, the structure of the electroluminescent device of the present invention will be explained with reference to the drawings.
第１図は本発明に係るエレクトロルミネセンス素子の一
例を示す断面図である０図中、１は透明基板、２は透明
電極、３は比誘電率が２５以下の酸化物または窒化物か
らなる絶縁薄膜であり、４は発光層、５は誘電層、６は
背面電極、７は防湿フィルムからなる外装体で、８は接
着剤である。なお、この第１図には図示されていないが
、透明電極２および背面電極６からはそれぞれリード体
が引き出され、外部の駆動電源と接続できるようになっ
ている。FIG. 1 is a cross-sectional view showing an example of an electroluminescent device according to the present invention. In FIG. 1, 1 is a transparent substrate, 2 is a transparent electrode, and 3 is an oxide or nitride with a dielectric constant of 25 or less. It is an insulating thin film, 4 is a light emitting layer, 5 is a dielectric layer, 6 is a back electrode, 7 is an exterior body made of a moisture-proof film, and 8 is an adhesive. Although not shown in FIG. 1, lead bodies are drawn out from the transparent electrode 2 and the back electrode 6, respectively, so that they can be connected to an external drive power source.
透明基板ｌには例えば厚さが１０〜５０μｒｎ程度のポ
リエチレンテレフタレートフィルムが用いられ、透明電
極２はインジウム−スズ酸化物膜（以下、ＩＴＯ膜とい
う）からなり、上記透明基板Ｉ上に真空蒸着法やスパッ
タ法などにより形成される。For example, a polyethylene terephthalate film with a thickness of about 10 to 50 μrn is used for the transparent substrate I, and the transparent electrode 2 is made of an indium-tin oxide film (hereinafter referred to as an ITO film), which is formed on the transparent substrate I by a vacuum evaporation method. It is formed by a sputtering method or the like.
絶縁薄膜３は、後に例示するような比誘電率が２５以下
の酸化物または窒化物からなり、真空蒸着法やスパッタ
法などで上記透明型８ｉ２上に形成される０発光層４は
蛍光体とバインダーとの混合物からなり、蛍光体として
はＺｎＳを母体にし、これにＣｕ、ＣＩやＣｕ、ＡＩ、
Ｃｕ、Ｍｎなとの賦活剤が添加されたものが用いられて
おり、バインダーとしてはシアノエチル化セルロースや
シアノエチル化プルランなどの高誘電率有機物が用いら
れている。誘電層５はＢａＴｉ０ｚなどの高誘電率酸化
物と前述のシアノエチル化セルロース、シアノエチル化
プルランなどの高誘電率有機物よりなるバインダーとの
混合物からなる。これら発光層４および誘電層５を模式
的に拡大して示すと第２図のとおりであり、この第２図
に基づいて説明すると、発光層４ではシアンエチル化セ
ルロースやシアノエチル化プルランなどの高誘電率有機
物からなるバインダー４ｂ中に蛍光体４ａが分散して存
在しており、誘電層５では前記同様の高誘電率有機物か
らなるバインダー５ｂ中にＢａＴｉ０．などの高誘電率
酸化物５ａが分散して存在している。このように、発光
層４ではバインダー４ｂ中に蛍光体４ａが分散して存在
しているので、第３図に示すように、透明電極２上に直
接発光層４が形成されている従来構造のエレクトロルミ
ネセンス素子では、発光層４の蛍光体４ａの誘電率とバ
インダー４ｂの誘電率との相違により蛍光体４ａに不均
一な電界がかかり、輝度が低くなるという欠点が見られ
るが、本発明のエレクトロルミネセンス素子では、透明
電極２と発光層４との間に絶縁薄膜３が設けられている
ので、発光層４にかかる電界が絶縁薄膜３によって規制
され、蛍光体に不均一な電界がかかるのが防止されて、
均一な電界が蛍光体にかかるようになり、エレクトロル
ミネセンス素子が高輝度を呈するようになる。また、第
３図に示すように、透明電極２上に発光層４が直接形成
されている従来構造のエレクトロルミネセンス素子では
、蛍光体と透明電極２とが接触しているので、発光時に
蛍光体と透明電極２との接触部分で過大電流が流れて発
光効率が低下するという欠点も見られるが、本発明のエ
レクトロルミネセンス素子では、透明電極２と発光層４
との間に絶縁薄膜３が設けられているので、蛍光体と透
明電極２とが接触しなくなり、したがって、発光時に蛍
光体と透明電極２との接触部分で過大電流が流れて発光
効率が低下するのが防止されるようになり、この面から
も輝度が向上する。The insulating thin film 3 is made of an oxide or nitride with a dielectric constant of 25 or less, as will be exemplified later, and the light emitting layer 4 formed on the transparent mold 8i2 by vacuum evaporation or sputtering is made of a phosphor. It consists of a mixture with a binder, and the phosphor is ZnS as a matrix, and Cu, CI, Cu, AI,
Those to which activators such as Cu and Mn are added are used, and high dielectric constant organic substances such as cyanoethylated cellulose and cyanoethylated pullulan are used as binders. The dielectric layer 5 is made of a mixture of a high dielectric constant oxide such as BaTiOz and a binder made of a high dielectric constant organic substance such as the aforementioned cyanoethylated cellulose or cyanoethylated pullulan. The light-emitting layer 4 and the dielectric layer 5 are schematically shown in enlarged form as shown in FIG. 2. Based on FIG. The phosphor 4a is dispersed in a binder 4b made of a dielectric constant organic substance, and in the dielectric layer 5, BaTi0. High dielectric constant oxides 5a such as oxides 5a are present in a dispersed manner. In this way, in the light-emitting layer 4, the phosphor 4a is dispersed in the binder 4b, so as shown in FIG. In an electroluminescent device, there is a drawback that a non-uniform electric field is applied to the phosphor 4a due to the difference between the dielectric constant of the phosphor 4a of the light emitting layer 4 and the dielectric constant of the binder 4b, resulting in low brightness. In this electroluminescent device, since the insulating thin film 3 is provided between the transparent electrode 2 and the light emitting layer 4, the electric field applied to the light emitting layer 4 is regulated by the insulating thin film 3, and a non-uniform electric field is generated on the phosphor. This is prevented,
A uniform electric field will be applied to the phosphor, and the electroluminescent device will exhibit high brightness. Furthermore, as shown in FIG. 3, in an electroluminescent element with a conventional structure in which a light emitting layer 4 is directly formed on a transparent electrode 2, since the phosphor and the transparent electrode 2 are in contact with each other, the fluorescent material emits light when emitting light. However, in the electroluminescent device of the present invention, the transparent electrode 2 and the light emitting layer 4
Since the insulating thin film 3 is provided between the phosphor and the transparent electrode 2, there is no contact between the phosphor and the transparent electrode 2. Therefore, when emitting light, an excessive current flows in the contact area between the phosphor and the transparent electrode 2, reducing luminous efficiency. The brightness is improved from this point of view as well.
背面電極６は厚さが５０μｍ程度のアルミニウム箔また
は厚さ１０〜５０μｍのポリエチレンテレフタレートフ
ィルム上に形成した厚さ１００〜５００ｎｍのアルミニ
ウム蒸着膜からなり、外装体７としての防湿フィルムに
は厚さ１００〜５００ａｍ程度のポリクロロトリフルオ
ロエチレンシートが使用されている。The back electrode 6 is made of an aluminum vapor-deposited film with a thickness of 100 to 500 nm formed on an aluminum foil with a thickness of about 50 μm or a polyethylene terephthalate film with a thickness of 10 to 50 μm. A polychlorotrifluoroethylene sheet of about 500 am is used.
そして、上記透明基板１、透明電極２、絶縁薄膜３、発
光層４、誘電層５、背面電極６などの素子内容物は上記
防湿フィルムからなる外装体７で覆われ、外装体７．７
同士の接合部は接着剤８で接着されて、素子内部が密閉
状態となるようにされている。Element contents such as the transparent substrate 1, the transparent electrode 2, the insulating thin film 3, the light emitting layer 4, the dielectric layer 5, and the back electrode 6 are covered with the exterior body 7 made of the moisture-proof film.
The joints between them are bonded with an adhesive 8, so that the inside of the element is sealed.
前記の絶縁薄膜３を構成する材料は酸化物または窒化物
からなるが、これらの酸化物または窒化物は誘電率が２
５以下のもので、特に誘電率が３〜２０の範囲のものが
好ましい、この絶縁薄膜３を構成する酸化物としては、
例えばＡＩ！０ｆｆ（比誘電率８） 、Ｔａ５ｋｓ （
比誘電率２５） 、ＹｇＣｈ （比誘電率＋５） 、Ｓ
ｉ Ｏｘ （比誘電率５）などが用いられ、窒化物と
しては例えばＡＩＮ （比誘電率８）、ｓ １３Ｎ４
（比誘電率５）などが用いられる。これら酸化物または
窒化物からなる絶縁Ｅｌ膜３は真空蒸着法、スパンタ法
などで透明電極２上に形成され、その厚みは５〜１，０
００ｎｍの範囲であることが必要であり、特に１０〜３
００ｎｍの範囲が好ましい、すなわち、上記絶縁薄膜３
の厚みが５ｎｍより薄くなると蛍光体にかかる電界を均
一にする効果が少なくなり、また絶縁薄膜３の厚みが１
．０００ｎｍより厚くなるとその厚み増加によって蛍光
体の発光状態が外部から視認しに（くなり坪度が低下す
る。The material constituting the insulating thin film 3 is made of oxide or nitride, and these oxides or nitrides have a dielectric constant of 2.
The oxide constituting this insulating thin film 3 is preferably one having a dielectric constant of 5 or less, particularly in the range of 3 to 20.
For example, AI! 0ff (relative permittivity 8), Ta5ks (
Relative permittivity 25), YgCh (relative permittivity +5), S
iOx (relative permittivity 5), etc. are used, and examples of nitrides include AIN (relative permittivity 8), s13N4
(relative dielectric constant 5), etc. are used. The insulating El film 3 made of these oxides or nitrides is formed on the transparent electrode 2 by a vacuum evaporation method, a spunter method, etc., and has a thickness of 5 to 1.0
It needs to be in the range of 00 nm, especially in the range of 10 to 3
00 nm range is preferable, that is, the above insulating thin film 3
When the thickness of the insulating thin film 3 becomes thinner than 5 nm, the effect of making the electric field applied to the phosphor uniform becomes less.
．． When the thickness exceeds 000 nm, the luminescent state of the phosphor becomes more visible from the outside due to the increased thickness, and the dimensional stability decreases.
本発明において、絶縁薄膜３を構成するのに用いる酸化
物または窒化物の比誘電率を２５以下に特定するのは、
比誘電率が大きくなると、透明電極２から発光層４にか
かる電界を絶縁薄ＩＩ！４３で規制することが困難にな
り、また厚み増加による杯度の低下を考慮すると形成し
うる膜厚の上限が１，０００ｎｍ程度になるため、それ
らを考慮すると、比誘電率を２５以下にしておくことが
必要となるからである。In the present invention, the dielectric constant of the oxide or nitride used to form the insulating thin film 3 is specified to be 25 or less because
When the relative permittivity increases, the electric field applied from the transparent electrode 2 to the light emitting layer 4 is reduced by a thin insulator II! 43, and considering the decrease in coverage due to the increase in thickness, the upper limit of the film thickness that can be formed is about 1,000 nm. This is because it is necessary to keep the
つぎに実施例をあげて本発明をさらに詳細に説明する。 Next, the present invention will be explained in more detail with reference to Examples.
実施例１
透明基体となる厚さ５０μｍのポリエチレンテレフタレ
ートフィルム上に厚さ２００ｎｍのＩＴＯＩＱを真空蒸
着法によって形成して透明電極とし、この透明電極上に
絶縁薄膜として第１表に試料Ｎ１１１１〜Ｉ−５で示す
各膜厚みのＡ１□０．膜を真空蒸着法により形成した。Example 1 A transparent electrode was formed by forming ITOIQ with a thickness of 200 nm by vacuum evaporation on a polyethylene terephthalate film with a thickness of 50 μm as a transparent substrate, and samples N1111 to I- A1□0. of each film thickness shown in 5. The film was formed by vacuum evaporation.
つぎに、上記Ａ１□０．膜からなる絶縁薄膜上に、シア
ノエチル化プルランおよびＺｎＳ：Ｃｕ、ＣＩをｎ−メ
チル−２−ピロリドンに分散させて調製した発光層形成
用のペーストをスクリーン印刷法で塗布し、乾燥して厚
さ６０μｍの発光層を形成し、ついで該発光層上にＢａ
Ｔｉ０＋とシアノエチル化プルランをｎ−メチル−２−
ピロリドンに分散させて調製した誘電層形成用のペース
トをスクリーン印刷法で塗布し、乾燥して厚さ２０μｍ
の誘電層を形成し、該誘電層上に厚さ５０μｍのアルミ
ニウム笛をラミネートして背面電極とした。そして、透
明電極と背面電極にそれぞれリード体を接続したのち、
全体を厚さ３００μｍのポリクロロトリフロロエチレン
よりなる防湿フィルムで上下より挟み、防湿フィルム同
士の接合部を接着剤で接着して封止し、エレクトロルミ
ネセンス素子を作製した。Next, the above A1□0. A paste for forming a light-emitting layer prepared by dispersing cyanoethylated pullulan, ZnS:Cu, and CI in n-methyl-2-pyrrolidone is applied onto the insulating thin film consisting of the film using a screen printing method, and the paste is dried to form a thick layer. A light emitting layer of 60 μm is formed, and then Ba is deposited on the light emitting layer.
Ti0+ and cyanoethylated pullulan were combined with n-methyl-2-
A paste for forming a dielectric layer prepared by dispersing it in pyrrolidone was applied by screen printing and dried to a thickness of 20 μm.
A dielectric layer was formed, and an aluminum whistle having a thickness of 50 μm was laminated on the dielectric layer to form a back electrode. Then, after connecting the lead bodies to the transparent electrode and the back electrode,
The entire structure was sandwiched between upper and lower moisture-proof films made of polychlorotrifluoroethylene with a thickness of 300 μm, and the joints between the moisture-proof films were sealed with an adhesive to produce an electroluminescent device.
実施例２〜６
実施例１におけるＡ１．Ｏ，に代えて、それぞれＴ ａ
、０．．５ｉｎ２、Ｙ Ｚ Ｏｘ、Ｓｉ＊Ｎ４、ＡＩ
Ｎを用い、それら酸化物または窒化物からなる絶縁薄膜
の厚みを３００ｎｍにした以外は実施例１と同様にして
エレクトロルミネセンス素子を作製した。Examples 2 to 6 A1 in Example 1. In place of O, respectively, T a
,0. ．． 5in2, YZ Ox, Si*N4, AI
An electroluminescent device was produced in the same manner as in Example 1 except that N was used and the thickness of the insulating thin film made of these oxides or nitrides was 300 nm.
比較例１
Ａ１□０．からなる絶縁薄膜を形成しなかったほかは実
施例１と同様にしてエレクトロルミネセンス素子を作製
した。Comparative example 1 A1□0. An electroluminescent device was produced in the same manner as in Example 1 except that the insulating thin film consisting of the following was not formed.
比較例２
Ａ１．Ｏｌからなる絶縁薄膜の厚みを２ｎｍに変えたほ
かは実施例１と同様にしてエレクトロルミネセンス素子
を作製した。Comparative Example 2 A1. An electroluminescent device was produced in the same manner as in Example 1 except that the thickness of the insulating thin film made of Ol was changed to 2 nm.
比較例３
Ａ１□０３からなる絶縁薄膜の厚みを２，０００ｎｍに
変えたほかは実施例１と同様にしてエレクトロルミネセ
ンス素子を作製した。Comparative Example 3 An electroluminescent device was produced in the same manner as in Example 1 except that the thickness of the insulating thin film made of A1□03 was changed to 2,000 nm.
上記のように作製した各エレクトロルミネセンス素子に
４００１（ｚの正弦波を印加し、電圧１００■の輝度を
測定した。その結果を第１表に示す。A sine wave of 4001 (z) was applied to each electroluminescent device produced as described above, and the luminance at a voltage of 100 cm was measured. The results are shown in Table 1.
第
第１表に示すように、絶縁薄膜を５〜１，０００ ｎｒ
ｎのｌγみに設けた実施例のエレクトロルミネセンス素
子は、従来品に相当する比較例１のエレクトロルミネセ
ンス素子に比べて、高輝度であった。As shown in Table 1, the insulating thin film is 5 to 1,000 nr
The electroluminescent element of the example provided at lγ of n had higher luminance than the electroluminescent element of Comparative Example 1, which corresponds to a conventional product.
〔発明の効果）
以上説明したように、本発明では、透明電極と発光層と
の間に比誘電率の小さい酸化物または窒化物からなる絶
縁薄膜を５〜１，０００ｎｍの厚みに設けることによっ
て、発光層にかかる電界を上記絶縁薄膜で規制し、蛍光
体に不均一な電界がかかるのを防止して、輝度を高める
ことができた。[Effects of the Invention] As explained above, in the present invention, by providing an insulating thin film made of an oxide or nitride with a low dielectric constant between the transparent electrode and the light emitting layer, the thickness of the insulating film is 5 to 1,000 nm. By regulating the electric field applied to the light-emitting layer with the insulating thin film, it was possible to prevent uneven electric fields from being applied to the phosphor, thereby increasing brightness.
【図面の簡単な説明】
第１図は本発明に係るエレクトロルミネセンス素子の一
例を示す断面図であり、第２図はエレクトロルミネセン
ス素子の発光層と誘電層を模式的に拡大して示す断面図
である。第３図は従来のエレクトロルミネセンス素子を
示す断面図である。
２・・・透明電極、 ３・・・絶縁薄膜、 ４・・・発
光層、５・・・誘電層、 ６・・・背面電極
２・・透明電極
３・絶縁薄膜
４ 発光層[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a sectional view showing an example of an electroluminescent device according to the present invention, and FIG. 2 is a schematic enlarged view of a light emitting layer and a dielectric layer of the electroluminescent device. FIG. FIG. 3 is a sectional view showing a conventional electroluminescent device. 2...Transparent electrode, 3...Insulating thin film, 4...Light emitting layer, 5...Dielectric layer, 6...Back electrode 2...Transparent electrode 3, Insulating thin film 4 Light emitting layer
Claims (3)
光層４および誘電層５を設けるエレクトロルミネセンス
素子であって、透明電極２と発光層４との間に比誘電率
が２５以下の酸化物または窒化物からなる絶縁薄膜３を
５〜１，０００ｎｍの厚みに設けたことを特徴とするエ
レクトロルミネセンス素子。(1) An electroluminescent element in which at least a light-emitting layer 4 and a dielectric layer 5 are provided between the transparent electrode 2 and the back electrode 6, and the dielectric constant between the transparent electrode 2 and the light-emitting layer 4 is 25 or less. An electroluminescent device characterized in that an insulating thin film 3 made of oxide or nitride is provided with a thickness of 5 to 1,000 nm.
ｉＯ＿２およびＹ＿２Ｏ＿３から選ばれる少なくとも１
種である請求項１記載のエレクトロルミネセンス素子。(2) The oxides are Al_2O_3, Ta_2O_5, S
At least one selected from iO_2 and Y_2O_3
The electroluminescent device according to claim 1, which is a seed.
れる少なくとも１種であるエレクトロルミネセンス素子
。(3) An electroluminescent element in which the nitride is at least one selected from AIN and Si_3N_4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63175530A JPH0224995A (en) | 1988-07-14 | 1988-07-14 | Electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63175530A JPH0224995A (en) | 1988-07-14 | 1988-07-14 | Electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0224995A true JPH0224995A (en) | 1990-01-26 |
Family
ID=15997679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63175530A Pending JPH0224995A (en) | 1988-07-14 | 1988-07-14 | Electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0224995A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61134491A (en) * | 1984-11-30 | 1986-06-21 | フロントエンジニアリング株式会社 | Controller of boring machine |
| JPH05326149A (en) * | 1992-05-20 | 1993-12-10 | Fukuvi Chem Ind Co Ltd | Dispersed electroluminescence |
| DE4123230B4 (en) * | 1990-07-18 | 2005-05-25 | Planar Systems Oy | Phosphor layer of an electroluminescent component |
-
1988
- 1988-07-14 JP JP63175530A patent/JPH0224995A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61134491A (en) * | 1984-11-30 | 1986-06-21 | フロントエンジニアリング株式会社 | Controller of boring machine |
| JPH0224995B2 (en) * | 1984-11-30 | 1990-05-31 | Furonto Enjiniaringu Kk | |
| DE4123230B4 (en) * | 1990-07-18 | 2005-05-25 | Planar Systems Oy | Phosphor layer of an electroluminescent component |
| JPH05326149A (en) * | 1992-05-20 | 1993-12-10 | Fukuvi Chem Ind Co Ltd | Dispersed electroluminescence |
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