JPH0765950A - Dispersion type el element - Google Patents
Dispersion type el elementInfo
- Publication number
- JPH0765950A JPH0765950A JP5215420A JP21542093A JPH0765950A JP H0765950 A JPH0765950 A JP H0765950A JP 5215420 A JP5215420 A JP 5215420A JP 21542093 A JP21542093 A JP 21542093A JP H0765950 A JPH0765950 A JP H0765950A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light emitting
- layer
- moisture
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006185 dispersion Substances 0.000 title claims description 17
- 239000010408 film Substances 0.000 claims abstract description 58
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920003002 synthetic resin Polymers 0.000 claims description 15
- 239000000057 synthetic resin Substances 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims 1
- -1 polyethylene terephthalate Polymers 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 15
- 238000007789 sealing Methods 0.000 abstract description 15
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 13
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 12
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 abstract description 10
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229920001684 low density polyethylene Polymers 0.000 abstract description 3
- 239000004702 low-density polyethylene Substances 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- PYVHTIWHNXTVPF-UHFFFAOYSA-N F.F.F.F.C=C Chemical compound F.F.F.F.C=C PYVHTIWHNXTVPF-UHFFFAOYSA-N 0.000 abstract 1
- 239000012789 electroconductive film Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000005001 laminate film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 239000011230 binding agent Substances 0.000 description 9
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000005033 polyvinylidene chloride Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000004373 Pullulan Substances 0.000 description 2
- 229920001218 Pullulan Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 235000019423 pullulan Nutrition 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、合成樹脂とガラスの積
層フィルムを封止用防湿フィルムとして使用した分散型
ＥＬ（エレクトロルミネッセンス）発光素子に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dispersion type EL (electroluminescence) light emitting device using a laminated film of synthetic resin and glass as a moistureproof film for sealing.
【０００２】[0002]
【従来の技術】近年、種々の形状や発光面積を選択でき
る均一な平面発光体としてＥＬ発光素子が注目されてき
ている。中でも高誘電有機バインダーを使用する分散型
ＥＬ発光素子は、薄く軽量な上、大面積とすることが容
易で安価なため、液晶ディスプレイのバックライト光源
や常夜灯等の表示灯に応用されている。2. Description of the Related Art In recent years, EL light-emitting devices have been attracting attention as a uniform flat light-emitting body in which various shapes and light-emitting areas can be selected. Among them, the dispersion type EL light emitting device using a high dielectric organic binder is applied to a backlight light source of a liquid crystal display or an indicator light such as a night light because it is thin and lightweight and can be easily made large in area.
【０００３】かかる分散型ＥＬ発光素子は、一般に図１
に示されるような構造である。すなわち、金属箔または
金属薄板からなる背面電極１と、酸化チタンもしくはチ
タン酸バリウム等の高誘電体粉末を高誘電有機バインダ
ーに分散させて薄膜を形成させた絶縁反射層２と、蛍光
体粉末を高誘電有機バインダーに分散させて薄膜を形成
した蛍光体層（発光層）３と、酸化インジウム等の金属
酸化物をポリエチレンテレフタレート、ポリエステル等
の絶縁性フィルム４上に蒸着して形成した透明電極５
（４と５で透明導電性フィルム６を構成する。）とから
なる積層体を、ガラスまたは合成樹脂等の透明防湿材料
７で封止した構造を有するものであり、上記電極５と背
面電極１との間に交流電場を印加することにより蛍光体
が励起され発光を与えるものである。Such a dispersion type EL light emitting device is generally shown in FIG.
The structure is as shown in. That is, a back electrode 1 made of a metal foil or a thin metal plate, an insulating reflection layer 2 in which a high dielectric powder such as titanium oxide or barium titanate is dispersed in a high dielectric organic binder to form a thin film, and a phosphor powder. A phosphor layer (light emitting layer) 3 in which a thin film is formed by dispersing in a high dielectric organic binder, and a transparent electrode 5 formed by vapor deposition of a metal oxide such as indium oxide on an insulating film 4 such as polyethylene terephthalate or polyester.
(A transparent conductive film 6 is constituted by 4 and 5) is sealed with a transparent moisture-proof material 7 such as glass or synthetic resin, and the electrode 5 and the back electrode 1 are provided. The fluorescent substance is excited by applying an AC electric field between them and gives light emission.
【０００４】ここで、分散型ＥＬ発光素子の寿命は、外
部から侵入する湿気により左右される。なぜならば、透
明導電性フィルム６は、通常２０ｇ／ｍ2 ・２４ｈｒ以
上の透湿性を有しているからである。このため、侵入し
た湿気から素子を保護するために、吸湿層を設けて最外
層を透明防湿材料７で封止することが一般的である。つ
まり、分散型ＥＬ発光素子の寿命は、上記封止材料であ
る透明防湿材料７の防湿性能によって決定される。Here, the life of the dispersion type EL light emitting device is influenced by moisture invading from the outside. This is because the transparent conductive film 6 usually has a moisture permeability of 20 g / m 2 · 24 hr or more. Therefore, in order to protect the element from invading moisture, it is common to provide a moisture absorption layer and seal the outermost layer with the transparent moisture-proof material 7. That is, the life of the dispersion type EL light emitting element is determined by the moistureproof performance of the transparent moistureproof material 7 which is the above-mentioned sealing material.
【０００５】従来、上記透明防湿材料として、無機物質
ではガラス板、合成樹脂では三フッ化塩化エチレン系樹
脂（以下、「ＰＣＴＦＥ」と略す。）やポリ塩化ビニリ
デン系樹脂が使用されてきた。Conventionally, as the transparent moisture-proof material, a glass plate is used as an inorganic substance, a trifluorochloroethylene resin (hereinafter abbreviated as "PCTFE") as a synthetic resin, and a polyvinylidene chloride resin as a synthetic resin.
【０００６】しかし、ガラス板を用いた場合には、防湿
性については満足できるものの、素子自体の形が平板状
に限られるかあるいはガラスの形によって決定され、設
置場所に応じた自由な形態をとることができないこと、
耐衝撃性に劣ること、重量が大きくなること等の欠点が
ある。However, when a glass plate is used, although the moisture resistance is satisfactory, the shape of the element itself is limited to a flat plate shape or is determined by the shape of the glass, and a free form depending on the place of installation can be used. Things that can't be taken,
It has drawbacks such as poor impact resistance and large weight.
【０００７】一方、合成樹脂を用いた場合には、簡単な
ヒートシールで封止できること、素子の形に応じて自由
な形態をとることができること、耐衝撃性に優れること
を長所として挙げることができるが、以下の欠点を有す
る。すなわち、例えばポリ塩化ビニリデン系樹脂を用い
た場合には、防湿性が不十分である。また、現在主流で
あるＰＣＴＦＥを用いた場合には、防湿性に優れるもの
の、非常に高価となる。On the other hand, when a synthetic resin is used, the advantages are that it can be sealed by a simple heat seal, it can take any shape depending on the shape of the element, and it has excellent impact resistance. However, it has the following drawbacks. That is, for example, when a polyvinylidene chloride resin is used, the moisture resistance is insufficient. Further, when PCTFE, which is currently the mainstream, is used, it is very expensive although it has excellent moisture resistance.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、従来
使用されていた透明防湿材料の上記欠点を解消し、ガラ
ス板やＰＣＴＦＥと同程度の防湿性を有し、かつ安価で
屈曲性を有する透明防湿材料を封止防湿フィルムとして
使用することにより、安価で長寿命の分散型ＥＬ発光素
子を提供することにある。SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned drawbacks of the transparent moisture-proof materials that have been conventionally used, to have a moisture-proof property comparable to that of a glass plate or PCTFE, and to be inexpensive and flexible. It is to provide an inexpensive and long-life dispersion-type EL light-emitting element by using the transparent moisture-proof material which it has as a sealing moisture-proof film.
【０００９】[0009]
【課題を解決するための手段】本発明者らは、上記課題
の解決のために鋭意検討した結果、合成樹脂フィルムに
透明ガラス薄膜を積層してなるフィルムが原理的にはガ
ラス板並みの防湿性を有しながら、安価で屈曲性を有す
ることに着目し、これを用いて最外層を封止した分散型
ＥＬ発光素子が、封止材料としてＰＣＴＦＥフィルムを
用いた素子に比べ安価に製造できること、かつ同等以上
の寿命が得られることを見い出し、本発明を完成させ
た。Means for Solving the Problems As a result of intensive studies for solving the above-mentioned problems, the present inventors found that a film obtained by laminating a transparent glass thin film on a synthetic resin film is a moisture-proof film which is in principle equivalent to a glass plate. Paying attention to the fact that the dispersion type EL light-emitting element is sealed at the outermost layer using the PCTFE film as an encapsulating material at a lower cost than the element using the PCTFE film as an encapsulating material. Moreover, they have found that the same or longer life can be obtained, and completed the present invention.
【００１０】すなわち、本発明は、少なくとも片方が透
明な材質である一対の電極間に誘電体と電場発光性蛍光
体とからなる発光層を有する素子本体が、防湿フィルム
で封止された構造において、上記防湿フィルムが、合成
樹脂フィルムに透明ガラス薄膜を積層したものからなる
ことを特徴とする分散型ＥＬ発光素子に関するものであ
る。That is, the present invention provides a structure in which an element body having a light emitting layer made of a dielectric material and an electroluminescent phosphor between a pair of electrodes, at least one of which is transparent, is sealed with a moisture-proof film. Further, the present invention relates to a dispersion-type EL light-emitting device, characterized in that the moisture-proof film is formed by laminating a transparent glass thin film on a synthetic resin film.
【００１１】以下、本発明を詳細に説明する。本発明の
分散型ＥＬ発光素子に使用される封止フィルムの第１層
を構成する合成樹脂フィルムは、透明性を有し１００℃
以下の温度領域において安定に形態を保持できれば、基
本的にその材質の種類に制限はないが、例えばポリプロ
ピレン、ポリエチレン、ポリエチレンテレフタレート
（以下、「ＰＥＴ」と略す。）、ポリ塩化ビニリデン、
ポリエステル等を例示することができる。それらのう
ち、特にＰＥＴ、ポリ塩化ビニリデンが好適である。The present invention will be described in detail below. The synthetic resin film constituting the first layer of the sealing film used in the dispersion type EL light emitting device of the present invention has transparency and is 100 ° C.
Basically, the kind of the material is not limited as long as the shape can be stably maintained in the following temperature range, but for example, polypropylene, polyethylene, polyethylene terephthalate (hereinafter abbreviated as “PET”), polyvinylidene chloride,
Polyester etc. can be illustrated. Among them, PET and polyvinylidene chloride are particularly preferable.
【００１２】上記合成樹脂フィルムの形態として、単一
樹脂フィルムであるか複数の樹脂を積層したフィルムで
あるか、または、延伸フィルムであるか無延伸フィルム
であるかを問わない。若干高価になるが、ＰＣＴＦＥフ
ィルムでもよい。但し、使用目的から、できるだけ防湿
性能の高い樹脂を用いることが望ましい。また、紫外線
防止剤や分散型ＥＬ素子の色変換を行なうための顔料等
を混合することもできる。上記合成樹脂フィルムの膜厚
は、１０〜２００μｍ程度が好ましい。The form of the synthetic resin film may be a single resin film, a film obtained by laminating a plurality of resins, or a stretched film or a non-stretched film. PCTFE film may be used although it is slightly expensive. However, for the purpose of use, it is desirable to use a resin having a moisture-proof property as high as possible. Further, it is also possible to mix an anti-UV agent or a pigment for performing color conversion of the dispersion type EL element. The thickness of the synthetic resin film is preferably about 10 to 200 μm.
【００１３】第２層を構成する透明ガラス薄膜は、透明
性を有し適度な屈曲性を有すれば基本的に制限はない
が、基材となる合成樹脂フィルム上に１０〜５００ｎｍ
程度の膜厚でガラス層を形成させたものが好ましい。ガ
ラス成分としては、多成分ガラス、石英ガラスのどちら
でもよいが、可視光透過率を極端に低下させない範囲に
おいては、価格面及び紫外線防止の面から多成分ガラス
が好ましい。The transparent glass thin film constituting the second layer is not particularly limited as long as it is transparent and has appropriate flexibility, but it is 10 to 500 nm on the synthetic resin film as the base material.
It is preferable that the glass layer is formed with a film thickness of about the same. The glass component may be either multi-component glass or quartz glass, but multi-component glass is preferable from the viewpoint of price and UV protection as long as the visible light transmittance is not extremely lowered.
【００１４】これら２つの構成要素を積層する方法とし
ては、真空蒸着法、イオンプレーティング法、スパッタ
リング法等を使用することができる。これら積層体およ
びその製造方法としては、特公平３−６９０４号、特開
平２−２４９６３６号、特開昭６０−６１２５５号に掲
げるものが例示できる。上記方法により、基材となる合
成樹脂上にガラス薄膜を形成し、積層する。この時、必
要に応じて所望枚数のガラス薄膜積層フィルムを合成樹
脂−ガラス薄膜−合成樹脂−ガラス薄膜の順となるよう
に熱圧着する方法や接着剤を介して接合することが好ま
しい。As a method for laminating these two constituent elements, a vacuum vapor deposition method, an ion plating method, a sputtering method or the like can be used. Examples of these laminates and methods for producing the same include those disclosed in JP-B-3-6904, JP-A-2-249636, and JP-A-60-61255. By the above method, a glass thin film is formed and laminated on a synthetic resin which is a base material. At this time, it is preferable to bond a desired number of glass thin film laminated films by thermocompression bonding or an adhesive so that the order of the synthetic resin-glass thin film-synthetic resin-glass thin film is in order, if necessary.
【００１５】この積層フィルムを封止フィルムとして使
用するには、ヒートシール性を持たせるために、１）ガ
ラス薄膜面にホットメルト接着剤層を設ける、２）ガラ
ス薄膜面にポリエチレンのようなヒートシール性のある
合成樹脂を熱圧着する方法や接着剤を介して積層する、
３）ガラス合成樹脂を熱圧着する方法や接着剤を介して
積層し、さらにホットメルト接着剤層を設けるという処
理を要する。To use this laminated film as a sealing film, in order to have heat sealability, 1) a hot melt adhesive layer is provided on the glass thin film surface, and 2) heat such as polyethylene is provided on the glass thin film surface. A method of thermocompression bonding synthetic resin with sealing property or laminating via a bonding agent,
3) A method of thermocompression bonding a glass synthetic resin or a process of laminating via a bonding agent and further providing a hot melt adhesive layer is required.
【００１６】この封止フィルムを用いて分散型ＥＬ発光
素子を製作するには、従来公知の方法を適用することが
でき、従来使用されてきたＰＣＴＦＥフィルムを本発明
に係る封止フィルムに変更するだけでよい。In order to manufacture a dispersion type EL light emitting device using this sealing film, a conventionally known method can be applied, and the conventionally used PCTFE film is changed to the sealing film according to the present invention. Just enough.
【００１７】すなわち、まず、分散型ＥＬ素子のバイン
ダーとして従来公知のもの、例えばエポキシ樹脂、フッ
素樹脂、シアノエチルプルラン、シアノエチルセルロー
ス、シアノエチルポリビニルアルコール等のシアノエチ
ル化物のような樹脂をＮ，Ｎ´−ジメチルホルムアミド
等の溶剤に溶解し、これに酸化チタンやチタン酸バリウ
ムのような無機誘電体を分散させた分散液を、アルミニ
ウム、金等の材料からなる電極基板上に塗布し乾燥させ
て５〜５０μｍの膜厚の絶縁反射層を形成する。That is, first, a conventionally known binder such as an epoxy resin, a fluororesin, cyanoethyl pullulan, cyanoethyl cellulose, or a cyanoethylated compound such as cyanoethyl polyvinyl alcohol is used as a binder for a dispersion type EL element. Dissolve in a solvent such as formamide and disperse an inorganic dielectric material such as titanium oxide or barium titanate on the electrode substrate made of a material such as aluminum and gold, and dry it to 5 to 50 μm. An insulating reflection layer having a film thickness of is formed.
【００１８】そして、該絶縁反射層の上に、上記と同様
な樹脂溶液にＺｎＳ等の電場発光性蛍光体を分散させた
分散液を塗布し乾燥させて１０〜５０μｍの膜厚の薄膜
状発光層を形成する。Then, on the insulating reflection layer, a dispersion liquid in which an electroluminescent phosphor such as ZnS is dispersed in a resin solution similar to the above is applied and dried to form thin film light emission having a film thickness of 10 to 50 μm. Form the layers.
【００１９】次いで酸化スズ、酸化インジウム等のペー
ストを塗布し乾燥させるか、あるいはこれらの導電性酸
化物をポリエステル等の絶縁性フィルム上に蒸着したも
のを、加熱圧着するかの手段で透明電極を形成する。Then, a transparent electrode is formed by applying a paste of tin oxide, indium oxide or the like and drying it, or by heat-pressing the conductive oxide vapor-deposited on an insulating film of polyester or the like. Form.
【００２０】最後に本発明に係る封止フィルムで封止す
る。このとき、本発明の目的から、長寿命化のためには
既存の蛍光体の表面を金属酸化物等により被覆防湿処理
したものを使用することが特に好ましい。また、封止フ
ィルムで封止する前に吸湿層としてナイロン層を積層す
ることもできる。Finally, sealing is performed with the sealing film according to the present invention. At this time, for the purpose of the present invention, it is particularly preferable to use an existing phosphor whose surface is covered with a metal oxide or the like for moisture-proof treatment in order to prolong the life. A nylon layer may be laminated as a moisture absorption layer before sealing with a sealing film.
【００２１】[0021]
【実施例】以下に、本発明を実施例及び比較例を挙げて
さらに詳細に説明する。なお、本発明は、これらによっ
て限定されるものではない。EXAMPLES The present invention will be described in more detail below with reference to examples and comparative examples. The present invention is not limited to these.
【００２２】実施例１ シアノエチルプルラン（信越化学株式会社製：ＣＲ−
Ｓ）とシアノエチルポリビニルアルコール（信越化学株
式会社製：ＣＲ−Ｖ）をで７：３の割合で混合し、Ｎ，
Ｎ´−ジメチルホルムアミドを加えて混合し攪拌して均
一なバインダー溶液を調製した。この溶液を２分して、
その一方に平均粒径が３０μｍの蛍光体粉末（ＺｎＳに
活性剤としてＣｕを加えたもの）をバインダー重量の
３．２倍量加え、均一に分散させて発光用ペーストとし
た。もう一方のバインダー溶液には平均粒径１．４μｍ
のチタン酸バリウム粉末をバインダー重量の４．７倍量
加え、均一に分散させて絶縁反射層用ペーストを調製し
た。Example 1 Cyanoethyl pullulan (manufactured by Shin-Etsu Chemical Co., Ltd .: CR-
S) and cyanoethyl polyvinyl alcohol (manufactured by Shin-Etsu Chemical Co., Ltd .: CR-V) were mixed at a ratio of 7: 3, and N,
N'-Dimethylformamide was added, mixed and stirred to prepare a uniform binder solution. 2 minutes into this solution,
To one of them, a phosphor powder having an average particle diameter of 30 μm (ZnS with Cu as an activator added) was added in an amount 3.2 times the binder weight and uniformly dispersed to obtain a light emitting paste. The other binder solution has an average particle size of 1.4 μm.
The barium titanate powder of was added in an amount of 4.7 times the weight of the binder and uniformly dispersed to prepare an insulating reflective layer paste.
【００２３】次に、図２に示すように、８０μｍ厚のア
ルミシート基板８上にスクリーン印刷法によって上記の
絶縁反射層用ペーストを印刷乾燥し、絶縁反射層９を形
成した。次いで同層上に同じくスクリーン印刷法によっ
て発光層用ペーストを印刷し、乾燥させて発光層１０を
形成した。得られた層の厚さは、絶縁反射層が約２６μ
ｍ、発光層が約５８μｍであった。Next, as shown in FIG. 2, the insulating reflection layer paste was printed and dried on the aluminum sheet substrate 8 having a thickness of 80 μm by a screen printing method to form an insulating reflection layer 9. Next, a light emitting layer paste was printed on the same layer by the screen printing method and dried to form the light emitting layer 10. The thickness of the obtained layer is about 26μ for the insulating reflective layer.
m, and the emission layer was about 58 μm.
【００２４】一方、ポリエチレンテレフタレート上に酸
化インジウムと酸化スズの混合物を蒸着積層してなる透
明導電性フィルム１１（エレクリスタ３００ｃ、日東電
工社製）の導電面側に銀ペーストを印刷乾燥し、給電線
１２を作製し、これにりん青銅よりなるリード電極１３
を取り付けた後、この給電線印刷面に上記発光層を重ね
合わせ、ロールラミネーターにより加熱圧着した。そし
て、背面電極となるアルミシート基板８にリード電極１
４を取り付け、発光素子本体を完成させた。On the other hand, a silver paste is printed and dried on the conductive surface side of a transparent conductive film 11 (Electrister 300c, manufactured by Nitto Denko Corporation), which is formed by vapor-depositing a mixture of indium oxide and tin oxide on polyethylene terephthalate. 12 is prepared, and a lead electrode 13 made of phosphor bronze
After mounting, the light emitting layer was superposed on the printed surface of the power supply line, and heat-pressed by a roll laminator. Then, the lead electrode 1 is formed on the aluminum sheet substrate 8 serving as the back electrode.
4 was attached to complete the light emitting element body.
【００２５】その後、膜厚１００μｍのポリエチレンテ
レフタレート１５、膜厚２００ｎｍのガラス薄膜１６及
び膜厚６０μｍの低密度ポリエチレン１７よりなる三層
積層フィルムで、発光素子本体をロールラミネーターに
より圧着封止し、分散型ＥＬ発光素子を得た。Thereafter, the light emitting element body was pressure-bonded and sealed by a roll laminator with a three-layer laminated film consisting of polyethylene terephthalate 15 having a film thickness of 100 μm, glass thin film 16 having a film thickness of 200 nm and low density polyethylene 17 having a film thickness of 60 μm. A type EL light emitting device was obtained.
【００２６】この素子は、１００Ｖ／４００Ｈｚ駆動に
て７２ｃｄ／ｍ2 を与え、５０℃×９０％ＲＨ雰囲気下
１００Ｖ／４００Ｈｚ駆動における輝度半減期４１０ｈ
ｒを与えた。This device gives 72 cd / m 2 at 100 V / 400 Hz driving, and a luminance half-life of 410 h at 100 V / 400 Hz driving in an atmosphere of 50 ° C. and 90% RH.
gave r.
【００２７】実施例２ 図３に示すように、第１層として膜厚３０μｍのポリエ
チレンテレフタレート１８、第２層として膜厚２００ｎ
ｍのガラス薄膜１９、第３層として膜厚３０μｍのポリ
エチレンテレフタレート１８、第４層として膜厚２００
ｎｍのガラス薄膜１９、第５層として膜厚５０μｍの低
密度ポリエチレン２０よりなる防湿フィルムを使用し、
実施例１と同様に封止し、分散型ＥＬ発光素子を得た。Example 2 As shown in FIG. 3, a polyethylene terephthalate film 18 having a thickness of 30 μm was used as the first layer and a film thickness of 200 n was used as the second layer.
m glass thin film 19, a third layer having a thickness of 30 μm polyethylene terephthalate 18, and a fourth layer having a thickness of 200
nm glass thin film 19 and a moisture-proof film made of low-density polyethylene 20 having a film thickness of 50 μm as the fifth layer,
The same sealing as in Example 1 was performed to obtain a dispersion type EL light emitting device.
【００２８】この素子は、１００Ｖ／４００Ｈｚ駆動に
て６９ｃｄ／ｍ2 を与え、５０℃×９０％ＲＨ雰囲気下
１００Ｖ／４００Ｈｚ駆動における輝度半減期４５０ｈ
ｒを与えた。This device gives 69 cd / m 2 at 100 V / 400 Hz drive, and a luminance half-life of 450 h at 100 V / 400 Hz drive in a 50 ° C. × 90% RH atmosphere.
gave r.
【００２９】比較例１ 封止フィルムとして膜厚２５０μｍのポリクロロトリフ
ルオロエチレンよりなる防湿シート（ＥＬシーラー ４
８１０Ｎ−Ｒ、日東電工社製）を使用した以外は、実施
例と同様にして分散型ＥＬ発光素子を作製した。Comparative Example 1 A moisture-proof sheet (EL sealer 4) having a thickness of 250 μm and made of polychlorotrifluoroethylene as a sealing film.
810N-R, manufactured by Nitto Denko Corporation) was used, and a dispersion type EL light emitting device was produced in the same manner as in the example.
【００３０】この素子は、１００Ｖ／４００Ｈｚ駆動に
て６８ｃｄ／ｍ2 を与え、５０℃×９０％ＲＨ雰囲気下
１００Ｖ／４００Ｈｚ駆動における輝度半減期３７０ｈ
ｒを与えた。This device gives 68 cd / m 2 at 100 V / 400 Hz drive and a luminance half-life of 370 h at 100 V / 400 Hz drive in an atmosphere of 50 ° C. and 90% RH.
gave r.
【００３１】比較例２ 封止フィルムとして膜厚２００μｍのポリエチレンテレ
フタレートよりなるパッケージシートを使用した以外
は、実施例と同様にして分散型ＥＬ発光素子を作製し
た。Comparative Example 2 A dispersion type EL light emitting device was produced in the same manner as in Example except that a package sheet made of polyethylene terephthalate having a film thickness of 200 μm was used as a sealing film.
【００３２】この素子は、１００Ｖ／４００Ｈｚ駆動に
て６８ｃｄ／ｍ2 を与え、５０℃×９０％ＲＨ雰囲気下
１００Ｖ／４００Ｈｚ駆動における輝度半減期８０ｈｒ
を与えた。This device gives 68 cd / m 2 at 100 V / 400 Hz driving, and a luminance half-life of 80 hr at 100 V / 400 Hz driving in an atmosphere of 50 ° C. and 90% RH.
Was given.
【００３３】実施例１、２と比較例１とを比較して明ら
かなように、本発明に係る発光素子は、非常に高価なＰ
ＣＴＦＥフィルムを用いたものと同程度の寿命を有す
る。As is clear from comparison between Examples 1 and 2 and Comparative Example 1, the light emitting device according to the present invention has a very expensive P
It has the same life as that using CTFE film.
【００３４】[0034]
【発明の効果】本発明により、ＰＣＴＦＥフィルムやガ
ラス板と同程度の防湿性を有し、長寿命で安価な分散型
ＥＬ発光素子を得ることができる。この発光素子は、面
状発光体として広く応用することができる。EFFECTS OF THE INVENTION According to the present invention, it is possible to obtain a dispersion type EL light emitting device which has the same moisture resistance as a PCTFE film or a glass plate and has a long life and is inexpensive. This light emitting element can be widely applied as a planar light emitting body.
【図１】図１は、発光素子の一般的な構造の断面を表す
図である。FIG. 1 is a diagram showing a cross section of a general structure of a light emitting device.
【図２】図２は、実施例１の発光素子の断面を表す図で
ある。FIG. 2 is a diagram showing a cross section of a light emitting device of Example 1.
【図３】図３は、実施例２の発光素子の断面を表す図で
ある。FIG. 3 is a diagram showing a cross section of a light emitting device of Example 2.
１ 背面電極 ２ 絶縁反射層 ３ 蛍光体層（発光層） ４ 絶縁性透明フィルム ５ 透明電極 ６ 透明導電性フィルム ７ 透明防湿材料 ８ アルミシート基板（背面電極） ９ 絶縁反射層 １０ 発光層 １１ 透明導電性フィルム １２ 給電線 １３ リード電極 １４ リード電極 １５ ポリエチレンテレフタレート １６ ガラス薄板 １７ ポリエチレン １８ ポリエチレンテレフタレート １９ ガラス薄板 ２０ ポリエチレン（最内層） 1 Back Electrode 2 Insulating Reflective Layer 3 Phosphor Layer (Light Emitting Layer) 4 Insulating Transparent Film 5 Transparent Electrode 6 Transparent Conductive Film 7 Transparent Moisture Proof Material 8 Aluminum Sheet Substrate (Back Electrode) 9 Insulating Reflective Layer 10 Light Emitting Layer 11 Transparent Conducting Film 12 Feed line 13 Lead electrode 14 Lead electrode 15 Polyethylene terephthalate 16 Glass thin plate 17 Polyethylene 18 Polyethylene terephthalate 19 Glass thin plate 20 Polyethylene (innermost layer)
Claims (1)
ている一対の電極間に誘電体と電場発光性蛍光体を含む
発光層を有する素子本体を、防湿フィルムで封止した分
散型ＥＬ発光素子において、上記防湿フィルムが、合成
樹脂フィルムと透明ガラス薄膜とを積層したものからな
ることを特徴とする分散型ＥＬ発光素子。1. A dispersion-type EL light-emitting device in which a device body having a light-emitting layer containing a dielectric and an electroluminescent phosphor is sealed between a pair of electrodes, at least one of which is made of a transparent material, with a moisture-proof film. In the dispersion type EL light emitting device, the moisture-proof film is formed by laminating a synthetic resin film and a transparent glass thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5215420A JPH0765950A (en) | 1993-08-31 | 1993-08-31 | Dispersion type el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5215420A JPH0765950A (en) | 1993-08-31 | 1993-08-31 | Dispersion type el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0765950A true JPH0765950A (en) | 1995-03-10 |
Family
ID=16672046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5215420A Pending JPH0765950A (en) | 1993-08-31 | 1993-08-31 | Dispersion type el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0765950A (en) |
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| US7067976B2 (en) | 2001-07-03 | 2006-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| KR100913927B1 (en) * | 2001-06-20 | 2009-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting device and method of manufacturing the same |
| US7728326B2 (en) | 2001-06-20 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
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| US9401498B2 (en) | 2011-03-04 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, substrate, and manufacturing method of substrate |
| US9502690B2 (en) | 2010-12-16 | 2016-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic light-emitting device and lighting device with organic resin and glass substrate |
-
1993
- 1993-08-31 JP JP5215420A patent/JPH0765950A/en active Pending
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|---|---|---|---|---|
| US9178168B2 (en) | 2001-06-20 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | White light emitting device |
| KR100975800B1 (en) * | 2001-06-20 | 2010-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting device and electronic appliance |
| US7728326B2 (en) | 2001-06-20 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
| KR100913927B1 (en) * | 2001-06-20 | 2009-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting device and method of manufacturing the same |
| KR100884218B1 (en) * | 2001-07-03 | 2009-02-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method of manufacturing a light-emitting device |
| US7372200B2 (en) | 2001-07-03 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| US7129102B2 (en) | 2001-07-03 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| US7067976B2 (en) | 2001-07-03 | 2006-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| JP2011018581A (en) * | 2009-07-09 | 2011-01-27 | Suzuki Motor Corp | Silencer for fuel cell system, and manufacturing method thereof |
| US9502690B2 (en) | 2010-12-16 | 2016-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic light-emitting device and lighting device with organic resin and glass substrate |
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| US9401498B2 (en) | 2011-03-04 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, substrate, and manufacturing method of substrate |
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