JPH0218319B2 - - Google Patents

Info

Publication number: JPH0218319B2
Authority: JP; Japan
Prior art keywords: layer; type; substrate; melt; type layer
Prior art date: 1982-08-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP57141896A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5930797A (ja

Inventor

Toshifumi Ito

Juki Tamura

Toshiharu Takahashi

Akio Nakamura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Handotai Co Ltd

Original Assignee

Shin Etsu Handotai Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-08-16

Filing date

1982-08-16

Publication date

1990-04-25

1982-08-16 Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd

1982-08-16 Priority to JP14189682A priority Critical patent/JPS5930797A/ja

1984-02-18 Publication of JPS5930797A publication Critical patent/JPS5930797A/ja

1990-04-25 Publication of JPH0218319B2 publication Critical patent/JPH0218319B2/ja

Status Granted legal-status Critical Current

Links

239000012535 impurity Substances 0.000 claims description 27
239000000758 substrate Substances 0.000 claims description 26
238000000034 method Methods 0.000 claims description 16
239000002994 raw material Substances 0.000 claims description 14
239000007791 liquid phase Substances 0.000 claims description 9
238000002844 melting Methods 0.000 claims description 3
230000008018 melting Effects 0.000 claims description 3
238000005204 segregation Methods 0.000 description 6
235000012431 wafers Nutrition 0.000 description 6
239000013078 crystal Substances 0.000 description 5
230000000694 effects Effects 0.000 description 5
238000011109 contamination Methods 0.000 description 4
229910001385 heavy metal Inorganic materials 0.000 description 4
239000000463 material Substances 0.000 description 4
238000007796 conventional method Methods 0.000 description 3
230000007547 defect Effects 0.000 description 3
238000010586 diagram Methods 0.000 description 3
239000000155 melt Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
238000001816 cooling Methods 0.000 description 2
238000004020 luminiscence type Methods 0.000 description 2
230000004308 accommodation Effects 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000011148 porous material Substances 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

JP14189682A 1982-08-16 1982-08-16 液相エピタキシヤル成長方法 Granted JPS5930797A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14189682A JPS5930797A (ja)	1982-08-16	1982-08-16	液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14189682A JPS5930797A (ja)	1982-08-16	1982-08-16	液相エピタキシヤル成長方法

Publications (2)

Publication Number	Publication Date
JPS5930797A JPS5930797A (ja)	1984-02-18
JPH0218319B2 true JPH0218319B2 (de)	1990-04-25

Family

ID=15302680

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14189682A Granted JPS5930797A (ja)	1982-08-16	1982-08-16	液相エピタキシヤル成長方法

Country Status (1)

Country	Link
JP (1)	JPS5930797A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH08168413A (ja) *	1990-01-19	1996-07-02	Reboul Smt	制動装置を備えたスティック状製品用ケース
DE19549588C2 (de) *	1995-03-17	2002-12-19	Showa Denko Kk	Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2833479B2 (ja) *	1994-06-16	1998-12-09	信越半導体株式会社	液相エピタキシャル成長法ＧａＰ単結晶層中のＳｉ濃度制御方法
CN104328487A (zh) *	2014-10-16	2015-02-04	中国科学院上海技术物理研究所	一种具有纯化母液功能的双衬底槽液相外延石墨舟

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52155081A (en) *	1976-06-18	1977-12-23	Mitsubishi Electric Corp	Production of gallium phosphide light emitting element
JPS5437472A (en) *	1977-08-29	1979-03-19	Hitachi Ltd	Manufacture of semiconductor
JPS5453977A (en) *	1977-10-07	1979-04-27	Toshiba Corp	Manufacture for gallium phosphide green light emitting element
JPS54133093A (en) *	1978-04-07	1979-10-16	Toshiba Corp	Manufacture for gallium phosphide green color light emitting element

1982
- 1982-08-16 JP JP14189682A patent/JPS5930797A/ja active Granted

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52155081A (en) *	1976-06-18	1977-12-23	Mitsubishi Electric Corp	Production of gallium phosphide light emitting element
JPS5437472A (en) *	1977-08-29	1979-03-19	Hitachi Ltd	Manufacture of semiconductor
JPS5453977A (en) *	1977-10-07	1979-04-27	Toshiba Corp	Manufacture for gallium phosphide green light emitting element
JPS54133093A (en) *	1978-04-07	1979-10-16	Toshiba Corp	Manufacture for gallium phosphide green color light emitting element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH08168413A (ja) *	1990-01-19	1996-07-02	Reboul Smt	制動装置を備えたスティック状製品用ケース
DE19549588C2 (de) *	1995-03-17	2002-12-19	Showa Denko Kk	Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode

Also Published As

Publication number	Publication date
JPS5930797A (ja)	1984-02-18

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