JPH02134813A - Application of resist - Google Patents
Application of resistInfo
- Publication number
- JPH02134813A JPH02134813A JP28763688A JP28763688A JPH02134813A JP H02134813 A JPH02134813 A JP H02134813A JP 28763688 A JP28763688 A JP 28763688A JP 28763688 A JP28763688 A JP 28763688A JP H02134813 A JPH02134813 A JP H02134813A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- wafer
- gas
- film thickness
- coating method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004528 spin coating Methods 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000003570 air Substances 0.000 claims abstract description 3
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 239000001307 helium Substances 0.000 claims abstract description 3
- 229910052734 helium Inorganic materials 0.000 claims abstract description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000002904 solvent Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000011324 bead Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
スピンコート法により半導体ウェファ−上にフォトレジ
ストを塗布する場合のレジストの塗布方法に関し、
レジスト膜厚の均一性の向上を目的とし、スピンコート
法によりウェファ−上にレジストを塗布する場合、ウェ
ファ−のエツジ領域に対してガスを吹付けるように構成
する。[Detailed Description of the Invention] [Summary] Regarding a resist coating method for coating a photoresist on a semiconductor wafer using a spin coating method, the present invention aims to improve the uniformity of the resist film thickness. - When applying resist on top, gas is blown against the edge areas of the wafer.
〔産業上の利用分野］
本発明はスピンコート法により半導体ウェファ−上にフ
ォトレジストを塗布する場合のレジストの塗布方法に関
する。[Industrial Application Field] The present invention relates to a resist coating method for coating a photoresist onto a semiconductor wafer by spin coating.
半導体装置の構造には、１個の半導体基板に対し金属又
は絶縁物の蒸着と、それらをパターニングするフォトリ
ソグラフィー工程が複数回行われる。このような半導体
装置の構造において、近時のＬＳＩの高密度、高集積化
に伴い、フォトリソグラフィー工程におけるレジストパ
ターニングの微細化が必要不可欠となって来ている。こ
のためウェファ−上のレジストの膜厚分布を均一にして
パターン精度の向上を行うことが要望されている。In the structure of a semiconductor device, vapor deposition of a metal or insulator and a photolithography process for patterning the same are performed multiple times on one semiconductor substrate. In the structure of such a semiconductor device, with the recent trend toward higher density and higher integration of LSIs, miniaturization of resist patterning in the photolithography process has become essential. Therefore, it is desired to improve the pattern accuracy by making the thickness distribution of the resist on the wafer uniform.
特にスピンコート法でレジストを塗布する場合にはウェ
ファ−周辺にエツジビード（レジストの盛り上がり）が
生ずるため、この膜厚制御はパターン精度の向上に大き
な影響を与えている。In particular, when resist is applied by spin coating, edge beads (bulges of resist) occur around the wafer, so controlling the film thickness has a great effect on improving pattern accuracy.
〔従来の技術］
第２図は従来のスピンコート法に用いるレジストコータ
を示す図である。これはレジストコータカップ１の中に
スピンナー２が設けられ、該スピンナー２は駆動モータ
３により回転駆動されるようになっている。そしてレジ
ストの塗布は、スピンナー２上にレジストを塗布すべき
ウェファ−４を取り付け、その表面にレジスト塗布ノズ
ル５から適量のレジストを滴下し、スピンナー２を回転
してレジストを遠心力によりウェファ−４の表面に広げ
てレジスト膜を形成するのである。[Prior Art] FIG. 2 is a diagram showing a resist coater used in a conventional spin coating method. A spinner 2 is provided in a resist coater cup 1, and the spinner 2 is rotationally driven by a drive motor 3. To apply the resist, the wafer 4 to be coated with the resist is mounted on the spinner 2, an appropriate amount of resist is dropped onto the surface of the wafer 4 from the resist coating nozzle 5, and the spinner 2 is rotated to apply the resist onto the wafer 4 by centrifugal force. A resist film is formed by spreading it over the surface.
上記従来のレジストコータでレジストを塗布する場合、
レジストの粘性、スピンナーの回転数等でレジスト膜厚
分布の不均一が発生する。特にウェファ−エツジでの膜
厚分布に異常が発生し易い。When applying resist using the conventional resist coater mentioned above,
Non-uniform resist film thickness distribution occurs due to resist viscosity, spinner rotation speed, etc. In particular, abnormalities tend to occur in the film thickness distribution at the wafer edge.
（以下エツジビードと称する。）
このエツジビードと称する膜厚分布異常は第３図に示す
ように中心方向に比べて厚くなる傾向がある。このため
、パターニング時の露光時にマスクがウェファ−中心部
のレジストに密着せずパタニング精度に悪影響を及ぼす
。特にレジスト塗布膜厚が厚い場合はこのエツジビード
領域が数ミリにおよぶこともある。(Hereinafter referred to as edge bead.) As shown in FIG. 3, this film thickness distribution abnormality called edge bead tends to become thicker in the center direction. For this reason, the mask does not come into close contact with the resist at the center of the wafer during exposure during patterning, which adversely affects patterning accuracy. Particularly when the resist coating is thick, this edge bead area may extend to several millimeters.
第４図はスピンナーの回転数とエツジビードの領域幅と
レジスト膜厚の変化を示す図であり、曲線Ａでスピンナ
ー回転数とレジスト膜厚との関係を示し、曲線Ｂでスピ
ンナー回転数とエツジビード領域幅との関係を示してい
る。図よりスピンナー回転数を増加させるとエツジビー
ド領域幅を減少させるが、塗布膜厚も減少させてしまう
。これは所定膜厚維持のためには望ましくない。このた
め、塗布膜厚維持とエツジビード領域幅減少を両５立さ
せる必要がある。FIG. 4 is a diagram showing changes in spinner rotation speed, edge bead area width, and resist film thickness. Curve A shows the relationship between spinner rotation speed and resist film thickness, and curve B shows the relationship between spinner rotation speed and edge bead area width. It shows the relationship with width. As shown in the figure, increasing the spinner rotation speed reduces the edge bead region width, but also reduces the coating film thickness. This is not desirable for maintaining a predetermined film thickness. Therefore, it is necessary to maintain the coating film thickness and reduce the width of the edge bead region at the same time.
本発明は上記従来の問題点に鑑み、レジスト膜厚の均一
性を向上可能としたレジストの塗布方法を提供すること
を目的とする。SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, it is an object of the present invention to provide a resist coating method that can improve the uniformity of resist film thickness.
（課題を解決するための手段〕
上記目的を達成するために、本発明のレジストの塗布方
法は、スピンコート法によりウェファ−１１上にレジス
ト１２を塗布する場合、ウェファ−１１のエツジ領域に
対してウェファ−中心から外方に向かう方向にガスを吹
き付けることを特徴とする。(Means for Solving the Problems) In order to achieve the above object, the resist coating method of the present invention applies to the edge region of the wafer 11 when the resist 12 is coated on the wafer 11 by spin coating. It is characterized by blowing gas outward from the center of the wafer.
スピンナー回転数依存の遠心力とウェファ−エツジ領域
で発生する表面張力との釣り合いでエツジビードの大き
さが決定されるので、この釣り合いを破るように核部に
ガスを吹き付けることにより、ウェファ−のエツジ領域
以外のレジスト膜厚に影響を与えずにエツジビードの発
生を抑えることができ、膜厚の均一性を向上することが
できる。The size of the edge bead is determined by the balance between the centrifugal force that depends on the spinner rotation speed and the surface tension generated in the wafer edge region. The generation of edge beads can be suppressed without affecting the resist film thickness outside the region, and the uniformity of the film thickness can be improved.
第１図は本発明方法の実施例を説明するための図である
。FIG. 1 is a diagram for explaining an embodiment of the method of the present invention.
同図において、１０はレジストコータのスピンナー １
１はその上に真空吸引等で固定されたウェファ−１１２
はレジストであり、１３が本発明の要点であるガス吹付
けのためのノズルである。In the figure, 10 is a spinner 1 of a resist coater.
1 is a wafer 112 fixed thereon by vacuum suction, etc.
1 is a resist, and 13 is a nozzle for gas spraying, which is the main point of the present invention.
該ノズル１３はウェファ−１１の中心から外方に向かう
方向で且つウェファ−の表面に対し約４５゜の角度でウ
ェファ−周辺類にガスを吹き付けることができるように
配置されている。The nozzle 13 is arranged so as to direct gas outwardly from the center of the wafer 11 and at an angle of about 45 DEG to the surface of the wafer onto the wafer surroundings.
ノズル１３から噴射するガスの流量はスピンナー１０の
回転数、レジストの粘度により適正値を決定しなければ
ならないが、本実施例ではスピンナーの回転数５０Ｏｒ
ｐｍ、レジスト粘度１５ｃｐのときノズル１３を３木用
いＮ２ガスを約３尼／ｍｉｎで流した。その結果エツジ
ビード領域を従来の１ ｃｍから１／１０の約１ ｍｍ
に抑えることができた。このときのレジスト膜厚は３．
９ ｔｍと通常のコーティング方法と変わりなかった。The flow rate of the gas injected from the nozzle 13 must be determined to an appropriate value depending on the rotation speed of the spinner 10 and the viscosity of the resist, but in this embodiment, the rotation speed of the spinner is 50 Or.
When the resist viscosity was 15 cp and the resist viscosity was 15 cp, N2 gas was flowed through the nozzle 13 at a rate of about 3 mm/min. As a result, the edge bead area has been reduced to approximately 1 mm, which is 1/10 of the conventional 1 cm.
I was able to keep it down to The resist film thickness at this time was 3.
9 tm, which was no different from the usual coating method.
なお本実施例では吹き付はガスとしてＮ２ガスを用いた
が、その他アルゴン、空気、ヘリウム、水素、酸素、水
蒸気等の単独ガス、又はこれらの混合ガスを用いること
もできる。またガス中にレジストの溶剤を混入させ、エ
ツジビード生成部分を溶解すると共によりガスによりエ
ツジビードを除去することもできる。In this embodiment, N2 gas was used as the gas for spraying, but other gases such as argon, air, helium, hydrogen, oxygen, water vapor, or a mixture thereof may also be used. It is also possible to mix a resist solvent into the gas to dissolve the edge bead forming portion and to remove the edge bead with the gas.
以上説明した様に、本発明によれば、スピンコート法に
よりウェファ−上にレジストを塗布する場合、ウェファ
−のエツジ領域にガスを吹き付けることによりエツジビ
ードの発生を抑え、塗布膜厚の均一化を行うことができ
る。これによりレジストパターニング精度の著しい向上
が可能となり、またウェファ−内におけるチップ良品率
も上がり、ウェファ−周辺領域での良品チップ取得率の
向上が達成される。As explained above, according to the present invention, when a resist is applied onto a wafer by a spin coating method, generation of edge beads is suppressed by spraying gas onto the edge region of the wafer, and the coating film thickness is made uniform. It can be carried out. This makes it possible to significantly improve resist patterning accuracy, and also increases the rate of good chips within the wafer, thereby achieving an improvement in the rate of obtaining good chips in the wafer peripheral area.
第１図は本発明の詳細な説明するための図、第２図は従
来のレジストコータを示す図、第３図は従来技術の問題
点を説明するための図、第４図はスピンナーの回転数と
エツジビード領域幅及びレジスト膜厚との関係を示す図
である。
図において、
１０はスピンナー
１１はウェファ−
１２はレジスト、
１３はノズル、
１４はガス
を示す。Fig. 1 is a diagram for explaining the present invention in detail, Fig. 2 is a diagram showing a conventional resist coater, Fig. 3 is a diagram for explaining the problems of the conventional technology, and Fig. 4 is a diagram for explaining the rotation of the spinner. FIG. 3 is a diagram showing the relationship between the number, edge bead region width, and resist film thickness. In the figure, 10 is a spinner 11 is a wafer, 12 is a resist, 13 is a nozzle, and 14 is a gas.
Claims (1)
スト（１２）を塗布する場合、ウエファー（１１）のエ
ッジ領域に対して１ウエファー中心から外方に向かう方
向にガスを吹付けることを特徴とするレジストの塗布方
法。 ２、上記ガスに、窒素、アルゴン、空気、ヘリウム、水
素、酸素、水蒸気から選択した１つ、又はこれらの混合
ガスを用いる請求項１記載のレジストの塗布方法。 ３、上記ガス中に、レジストの溶剤を混入させることを
特徴とする請求項１記載のレジストの塗布方法。[Claims] 1. When applying a resist (12) on a wafer (11) by spin coating, a gas is blown outward from the center of the wafer (11) to the edge region of the wafer (11). A method for applying a resist, which is characterized by applying a resist. 2. The resist coating method according to claim 1, wherein the gas is one selected from nitrogen, argon, air, helium, hydrogen, oxygen, and water vapor, or a mixture thereof. 3. The resist coating method according to claim 1, wherein a resist solvent is mixed into the gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28763688A JPH02134813A (en) | 1988-11-16 | 1988-11-16 | Application of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28763688A JPH02134813A (en) | 1988-11-16 | 1988-11-16 | Application of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02134813A true JPH02134813A (en) | 1990-05-23 |
Family
ID=17719793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28763688A Pending JPH02134813A (en) | 1988-11-16 | 1988-11-16 | Application of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02134813A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03245870A (en) * | 1990-02-21 | 1991-11-01 | Mitsubishi Electric Corp | Apparatus for applying coating fluid |
| US5378511A (en) * | 1993-03-22 | 1995-01-03 | International Business Machines Corporation | Material-saving resist spinner and process |
| US5449405A (en) * | 1991-10-29 | 1995-09-12 | International Business Machines Corporation | Material-saving resist spinner and process |
| JP2013171937A (en) * | 2012-02-20 | 2013-09-02 | Disco Abrasive Syst Ltd | Protective film coating device |
-
1988
- 1988-11-16 JP JP28763688A patent/JPH02134813A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03245870A (en) * | 1990-02-21 | 1991-11-01 | Mitsubishi Electric Corp | Apparatus for applying coating fluid |
| US5449405A (en) * | 1991-10-29 | 1995-09-12 | International Business Machines Corporation | Material-saving resist spinner and process |
| US5378511A (en) * | 1993-03-22 | 1995-01-03 | International Business Machines Corporation | Material-saving resist spinner and process |
| JP2013171937A (en) * | 2012-02-20 | 2013-09-02 | Disco Abrasive Syst Ltd | Protective film coating device |
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