JPS61196534A - Photoresist coating device - Google Patents

Photoresist coating device

Info

Publication number
JPS61196534A
JPS61196534A JP3688685A JP3688685A JPS61196534A JP S61196534 A JPS61196534 A JP S61196534A JP 3688685 A JP3688685 A JP 3688685A JP 3688685 A JP3688685 A JP 3688685A JP S61196534 A JPS61196534 A JP S61196534A
Authority
JP
Japan
Prior art keywords
photoresist
semiconductor wafer
wafer
turbine wheel
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3688685A
Other languages
Japanese (ja)
Inventor
Kenji Kawai
研至 河合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3688685A priority Critical patent/JPS61196534A/en
Publication of JPS61196534A publication Critical patent/JPS61196534A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To reduce any coating unevenness in the spin-coating process by a method wherein a turbine wheel is mounted encircling a wafer to locate it on the central part of the turbine wheel so that the turbine wheel may be turned forcing the atmosphere therein to flow from the turning center to the peripheral part. CONSTITUTION:Photoresist is dripped on the surface of a semiconductor wafer 2 and then the wafer 2 is turned centering on the central axle of a spin chuck 1 to form a specified photoresist coating film meeting the specified requirements. At this time, a turbine wheel 5 is turned making the atmosphere above the semiconductor wafer 2 flow from the turning center to the peripheral part to be exhausted. Through these procedures, even and excellent photoresist coating film may be formed stably in the continuous processing of wafers since the photoresist may be prevented from bouncing upon the surface of semiconductor wafer 2 within the processing cup while making the atmosphere above the semiconductor streadily flow from the turning center to the peripheral part.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造工程に関し、特にフォトリソグラフ
ィーにおける、半導体基板すなわち半導体ウェハー表面
へのフォトレジスト塗布処理に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing process, and particularly to a photoresist coating process on the surface of a semiconductor substrate, that is, a semiconductor wafer, in photolithography.

〔従来の技術〕[Conventional technology]

従来、この徳のフォトレジスト塗布処理は吐出ノズルよ
りフォトレジストｔスピンチヤツク上に真空吸着された
半導体ウェハー表面に滴丁し、回転塗布する方法となっ
ているが、塗布カップ内の雰囲気の流れは塗布カップ下
部に設けられている排気口に向かう流れとなるため、そ
の方向はウェハーの回転中心に対して対称なものではな
く、また排気の量も一定でないこと等の要因により、均
一な塗布膜を形成し、塗布装置としての安定性を保つに
はかなりきびしい条件設定を必要としていた。Conventionally, this photoresist coating process has been performed by applying a droplet from a discharge nozzle onto the surface of a semiconductor wafer that is vacuum-adsorbed onto a photoresist T-spin chuck, and coating it by rotation, but the flow of the atmosphere inside the coating cup is Since the flow is directed toward the exhaust port provided at the bottom of the cup, the direction is not symmetrical with respect to the center of rotation of the wafer, and the amount of exhaust gas is not constant. In order to form the coating and maintain stability as a coating device, it was necessary to set very strict conditions.

〔発明が、剪決しようとする問題点〕[Problems that the invention attempts to solve]

上述した従来のフォトレジスト塗布方法は、第３図に示
す様な処理カップ４の内に２いて塗布処理を行っている
。半導体ウェハー２の表面に形成されるフォトレジスト
塗布膜は、半導体ウェハー表面全体において均一な所望
の膜厚であり、ざらにこの内容が、半導体ウェハーの連
続処理において安定して得られることが望ましい。しか
しながら、回転塗布処理中における処理カップ内部での
フォトレジストのはね返りや、塗布カップ内の雰囲気の
流れが安定したものとは言えず１旗れの方向もウェハー
の回転中心に対して対称とはなっていないこと等の要因
により、半導体ウェハー表面に均一なフォトレジスト塗
布膜を安定して形成するための、雰囲気の状態、カップ
形状といった諸条件を決定することが容易なものではな
い。このため、均一なフォトレジス）ｊ［’ｅ影形成る
ための条件設定、装置の調整といったことにかな）の努
力を払わなければならないという欠点がある。尚第３図
で１はスピンチャック、３はフォトレジスト滴下用ノズ
ルである。In the conventional photoresist coating method described above, coating is performed using two photoresists in a processing cup 4 as shown in FIG. It is desirable that the photoresist coating film formed on the surface of the semiconductor wafer 2 has a desired thickness that is uniform over the entire surface of the semiconductor wafer, and that this content can be stably obtained during continuous processing of the semiconductor wafer. However, during the spin coating process, the photoresist bounces inside the processing cup, and the flow of the atmosphere inside the coating cup is not stable, and the direction of one flag is not symmetrical with respect to the center of rotation of the wafer. It is not easy to determine various conditions, such as the atmosphere and cup shape, in order to stably form a uniform photoresist coating film on the surface of a semiconductor wafer. For this reason, there is a drawback that efforts must be made to create a uniform photoresist, such as setting conditions for forming a shadow and adjusting the apparatus. In FIG. 3, 1 is a spin chuck, and 3 is a nozzle for dropping photoresist.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のフォトレジスト塗布装置は処理カップ内部に、
ウェハー周囲を囲みウェハーがその中心に位置する様に
羽根車を設けてあり、この羽根車を回転させることで強
制的にウェハー面上に中心部から外周方向への雰囲気の
流れ場を形成させる機能を有し、ている。The photoresist coating device of the present invention has inside the processing cup,
An impeller is installed to surround the wafer so that the wafer is located at the center, and by rotating this impeller, a function that forcibly creates an atmosphere flow field from the center to the outer circumference on the wafer surface. have.

〔実施例」 次に１本発明について図面上参照して説明する。〔Example" Next, one embodiment of the present invention will be explained with reference to the drawings.

第１図は、本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

フォトレジストのウェハー表面への塗布はａｇ１図に示
す様な処理カップにおいて行う。スピンチャック１上に
真空吸着された半導体ウェハー２と、その半導体ウェハ
ーの中央付近にフォトレジストｙｋ調下するノズル３と
、半導体ウェハー外周部に設けた羽根車５と、それらを
被う処理カップ４により基本構成される。半導体ウェハ
ー表面にフォトレジスト′ｌｔ滴下し、設定条件に従い
半導体ウェハーをスピンチャック１の中心軸を中心に回
転さ所望のフォトレジスト塗布膜全形成させる。この際
、羽根車５を回転させ半導体ウェハー面上の雰囲気に回
転中心部から外周部への流れを生じさせて、排気を行う
ことにより、処理カップ内部での半導体ウェハー表面へ
のフォトレジストのはね返りを防ぎ、さらに半導体ウェ
ハー表面上での回転中心部から外周方向への安定した雰
１ｆｆｌ気の流れ場が作られることにより、均一で良好
なフォトレジスト塗布膜をウェハーの連続処理において
安定して形成することができる。The photoresist is applied to the wafer surface in a processing cup as shown in Figure ag1. A semiconductor wafer 2 vacuum-adsorbed onto a spin chuck 1, a nozzle 3 for adjusting photoresist yk near the center of the semiconductor wafer, an impeller 5 provided on the outer periphery of the semiconductor wafer, and a processing cup 4 covering them. It basically consists of: A photoresist 'lt is dropped onto the surface of the semiconductor wafer, and the semiconductor wafer is rotated around the central axis of the spin chuck 1 according to the set conditions to completely form a desired photoresist coating film. At this time, the impeller 5 is rotated to create a flow in the atmosphere above the semiconductor wafer surface from the rotation center to the outer periphery, and exhaust is performed, thereby preventing the photoresist from rebounding onto the semiconductor wafer surface inside the processing cup. Furthermore, by creating a stable air flow field from the center of rotation toward the outer periphery on the semiconductor wafer surface, a uniform and good photoresist coating film can be stably formed during continuous wafer processing. can do.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、処理カップ内に設けた羽
根車を回転させ、半導体ウェハー面上部の雰囲気に、中
央部から外周方向への流れを強制的に発生させることに
より、フォトレジストの回転塗布における塗布むら勿低
減させウェハー表面に均一なフォトレジスト塗布膜を半
４体ウェハーの連続処理において安定して形成すること
ができる効果がある。As explained above, the present invention rotates the impeller provided in the processing cup to forcefully generate a flow in the atmosphere above the surface of the semiconductor wafer from the center toward the outer circumference, thereby rotating the photoresist. This has the effect of reducing coating unevenness during coating and stably forming a uniform photoresist coating film on the wafer surface during continuous processing of half-quad wafers.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明のフォトレジスト塗布装置の縦断面図、
第２図は第１図のＡ−Ａ縦断面図、第３図は従来のレジ
スト塗布装置の断面図である。 １・・・・・・スピンチャック、２・・・・・・ウェハ
ー、３・・・・・・フォトレジスト滴下用ノズル、４・
・・・・・処理カップ、５・・・・・・羽根車。 代理人　弁理士　　内　原　　　日　　、−１・　゛ユ
１，７・′ ＋−ゝ 第１図 第２図FIG. 1 is a longitudinal cross-sectional view of the photoresist coating apparatus of the present invention;
FIG. 2 is a longitudinal sectional view taken along the line AA in FIG. 1, and FIG. 3 is a sectional view of a conventional resist coating apparatus. 1...Spin chuck, 2...Wafer, 3...Photoresist dropping nozzle, 4...
...Processing cup, 5... Impeller. Agent Patent Attorney Uchihara Hi, -1・゛yu1,7・′ +−ゝFigure 1Figure 2

Claims (1)

【特許請求の範囲】[Claims] 　半導体ウェハー表面にフォトレジストを回転塗布する
装置に於いて、塗布カップ内部に半導体ウェハー周囲を
囲み、該半導体ウェハーがその中心に位置する様に羽根
車を設け、この羽根車を回転させることで強制的に該ウ
ェハー面上に中心部から外周方向への雰囲気の流れを作
ることにより、該ウェハー面上に均一なフォトレジスト
膜を形成する機能を具備することを特徴とするフォトレ
ジスト塗布装置。In an apparatus for spin-coating photoresist onto the surface of a semiconductor wafer, an impeller is installed inside the coating cup to surround the semiconductor wafer and position the semiconductor wafer in the center. 1. A photoresist coating apparatus having a function of forming a uniform photoresist film on the wafer surface by creating an atmosphere flow from the center toward the outer periphery on the wafer surface.
JP3688685A 1985-02-26 1985-02-26 Photoresist coating device Pending JPS61196534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3688685A JPS61196534A (en) 1985-02-26 1985-02-26 Photoresist coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3688685A JPS61196534A (en) 1985-02-26 1985-02-26 Photoresist coating device

Publications (1)

Publication Number Publication Date
JPS61196534A true JPS61196534A (en) 1986-08-30

Family

ID=12482258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3688685A Pending JPS61196534A (en) 1985-02-26 1985-02-26 Photoresist coating device

Country Status (1)

Country Link
JP (1) JPS61196534A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124661U (en) * 1991-05-01 1992-11-13 ゼネラル株式会社 Ink ribbon fall prevention member for ink ribbon/cassette
JPH09232206A (en) * 1996-02-22 1997-09-05 Hitachi Ltd Coating apparatus
US6264752B1 (en) * 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US6318385B1 (en) 1998-03-13 2001-11-20 Semitool, Inc. Micro-environment chamber and system for rinsing and drying a semiconductor workpiece
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6413436B1 (en) 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6492284B2 (en) 1999-01-22 2002-12-10 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US6511914B2 (en) 1999-01-22 2003-01-28 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US6543156B2 (en) 2000-01-12 2003-04-08 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6548411B2 (en) 1999-01-22 2003-04-15 Semitool, Inc. Apparatus and methods for processing a workpiece
US6632292B1 (en) 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6680253B2 (en) 1999-01-22 2004-01-20 Semitool, Inc. Apparatus for processing a workpiece
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124661U (en) * 1991-05-01 1992-11-13 ゼネラル株式会社 Ink ribbon fall prevention member for ink ribbon/cassette
JPH09232206A (en) * 1996-02-22 1997-09-05 Hitachi Ltd Coating apparatus
US6632292B1 (en) 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6264752B1 (en) * 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6997988B2 (en) 1998-03-13 2006-02-14 Semitool, Inc. System for processing a workpiece
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6447633B1 (en) 1998-03-13 2002-09-10 Semitdol, Inc. Reactor for processing a semiconductor wafer
US6446643B2 (en) 1998-03-13 2002-09-10 Semitool, Inc. Micro-environment chamber and system for rinsing and drying a semiconductor workpiece
US6695914B2 (en) 1998-03-13 2004-02-24 Semitool, Inc. System for processing a workpiece
US6494956B2 (en) 1998-03-13 2002-12-17 Semitool, Inc. System for processing a workpiece
US6666922B2 (en) 1998-03-13 2003-12-23 Semitool, Inc. System for processing a workpiece
US6660098B2 (en) 1998-03-13 2003-12-09 Semitool, Inc. System for processing a workpiece
US6318385B1 (en) 1998-03-13 2001-11-20 Semitool, Inc. Micro-environment chamber and system for rinsing and drying a semiconductor workpiece
US6558470B2 (en) 1998-03-13 2003-05-06 Semitool, Inc. Reactor for processing a microelectronic workpiece
US6548411B2 (en) 1999-01-22 2003-04-15 Semitool, Inc. Apparatus and methods for processing a workpiece
US6511914B2 (en) 1999-01-22 2003-01-28 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US6680253B2 (en) 1999-01-22 2004-01-20 Semitool, Inc. Apparatus for processing a workpiece
US6492284B2 (en) 1999-01-22 2002-12-10 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
US6413436B1 (en) 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US6543156B2 (en) 2000-01-12 2003-04-08 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying

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