JPH02123764A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- JPH02123764A JPH02123764A JP63277710A JP27771088A JPH02123764A JP H02123764 A JPH02123764 A JP H02123764A JP 63277710 A JP63277710 A JP 63277710A JP 27771088 A JP27771088 A JP 27771088A JP H02123764 A JPH02123764 A JP H02123764A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- film
- main component
- material whose
- whose main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000007787 solid Substances 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 22
- 238000005299 abrasion Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001721 carbon Chemical class 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- -1 composed of carbon Chemical compound 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003208 poly(ethylene sulfide) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
「発明の利用分野」
本発明は下地被膜と、この被膜上に光学的バンド巾が１
．ＯｅＶ以上特に１．５〜５．５ｅＶを有する炭素また
は炭素を主成分とする被膜をテープ状キャリアに仮付け
された固体の被形成面上にコーティングすることにより
、これら固体の表面でＳＭＴ （サーフェイス・マウン
ト・テクノロジ 表面実装技術以下ＳＭＴという）にお
けるマウントの際必要な滑り（平滑性）をよくし、また
電子部品を摩擦によって生ずる静電気の発生による破損
から防ごうとした複合体に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Application of the Invention" The present invention provides a base coating and an optical band width of 1 on this coating.
．． SMT (surface・Mount Technology This technology relates to a composite that improves the slippage (smoothness) necessary for mounting in surface mount technology (hereinafter referred to as SMT), and that attempts to prevent electronic components from being damaged by static electricity generated by friction.
「従来技術」
炭素膜のコーティングに関しては、未発四人の出願にな
る特許１１１ｒ炭素被膜を有する複合体およびその作製
方法１ （特願昭５６−１４６９３６ 昭和５６年９
月１７日出願）が知られている。しかしこれらはその形
成温度が１５０℃以下、好ましくは室温で成膜し、かつ
、これらの温度でも耐熱性を有する有機樹脂を主成分と
するテープ状キャリア上の固体である被形成面に形成せ
んとする場合の例はまったく述べられていない。``Prior art'' Regarding carbon film coating, Patent No. 111r Composite with carbon film and its manufacturing method 1 (Patent application No. 146936, 1982)
(filed on May 17th) is known. However, these films are formed at a temperature of 150°C or lower, preferably at room temperature, and are not formed on a solid surface on a tape-shaped carrier whose main component is an organic resin that is heat resistant even at these temperatures. No example is given at all.
また種々の材料表面を複合して有する固体をまず下地被
膜で覆い、その上に積層して炭素または炭素を主成分と
する被膜を形成する例はいわんや述べられていない。Further, there is no mention of an example in which a solid having a composite surface of various materials is first covered with a base film and then laminated thereon to form carbon or a film mainly composed of carbon.
「従来の問題点」
従来、炭素膜に関しては、種々の材料の表面、特に酸化
物材料の表面または金属表面への密着性を考慮した例は
述べられていない。炭素膜を室温（プラズマにより１５
０″Ｃ以下にまで表面が昇温する）で作るという条件で
は形成された被膜が剥がれやすくこの密着性は重要であ
る。この低温での被膜作製方法でも十分な硬度を有せし
め得ることの特徴を有しつつも、固体上ではしばしば固
体表面とは剥がれやすいという問題があった。特に、１
つの固体がセラミック表面、有機樹脂表面、金属表面、
ガラス表面等の複合した表面を有するとともに、一部（
例えば外部接触用電極等）を選択的に被膜を形成せずに
多量生産することは不可能とされていた。"Conventional Problems" Conventionally, regarding carbon films, no examples have been described that take into account adhesion to the surfaces of various materials, especially the surfaces of oxide materials or metal surfaces. The carbon film was heated to room temperature (15
This adhesion is important because the film formed is likely to peel off under the condition that the surface temperature rises to below 0''C.The feature of this method is that it can have sufficient hardness even at low temperatures. However, there was a problem that it often peeled off from the solid surface.In particular, 1
The three solids are ceramic surfaces, organic resin surfaces, metal surfaces,
It has a composite surface such as a glass surface, and some parts (
For example, it has been considered impossible to mass-produce external contact electrodes (for example, external contact electrodes, etc.) without selectively forming a coating.
「問題を解決すべき手段」
本発明は、テープ状キャリア上に仮付けされた固体上に
下地被膜として被酸化物、特に好ましくは窒化珪素（Ｓ
ｉＪ４−ｘ Ｏ≦Ｘ〈４）またはこれらを主成分とする
被膜を室温〜１５０°Ｃの温度で形成し、さらＪここの
上に密接させ炭素または炭素を主成分とする被膜をプラ
ズマ表面コーティングし、その表面テノＳＭＴの際のロ
ーディングロボットとの耐摩耗性等の機械的強度を補強
し、またこれらローディングロボットとの平滑性を向上
せしめたというものである。"Means to Solve the Problem" The present invention provides an oxidized material, particularly preferably silicon nitride (S
iJ4-x O≦X〈4) or a film mainly composed of these is formed at a temperature of room temperature to 150°C, and then carbon or a film mainly composed of carbon is plasma-coated on the surface. However, the mechanical strength such as wear resistance with loading robots during surface Teno SMT has been reinforced, and smoothness with these loading robots has been improved.
特にかかる下地被膜である第１の被膜上に、炭素または
炭素を主成分とする第２の被膜を形成せしめることによ
り、実質的に固体と密着性が向上できる。また第２の被
膜である炭素または炭素を主成分とする被膜は１×１０
６〜５Ｘ１０１３Ωｃｍの比抵抗をもつため、この表面
に静電気が摩擦等でこすれて発生しても、局部的に集中
し固体即ち例えば電子部品を破損するということがない
。このため、本発明において炭素または炭素を主成分と
する被膜は、光学的エネルギバンド巾（Ｅｇという）が
１．ＯｅＶ以上、好ましくは１．５〜５．５ｅＶを有す
るダイヤモンドに類似の１×１０６〜５×１０１３Ωｃ
ｍの半絶縁性の炭素を形成することを特徴としている。In particular, by forming carbon or a second film containing carbon as a main component on the first film, which is the base film, the adhesion to the solid can be substantially improved. In addition, the second coating, which is carbon or a coating mainly composed of carbon, is 1×10
Since it has a specific resistance of 6 to 5×10 13 Ωcm, even if static electricity is generated due to friction or the like on this surface, it will not be locally concentrated and damage solid objects, such as electronic components. Therefore, in the present invention, carbon or a coating mainly composed of carbon has an optical energy band width (referred to as Eg) of 1. 1 x 106 to 5 x 1013 Ωc similar to diamond with OeV or more, preferably 1.5 to 5.5 eV
It is characterized by forming semi-insulating carbon of m.
さらに本発明は、その硬度もビッカース硬度が１０００
Ｋｇ／ｍｍ”以上、好ましくは２５００にｇ／ｍｍ”以
上というダイヤモンド類似の硬さを有するアモルファス
（非晶質）または５〜２００人の大きさの微結晶性を有
するセミアモルファス（半非晶質）構造を有する炭素ま
たはこの炭素中に水素または弗素の如きハロゲン元素が
２５原子％以下、または■価またはＶ価の不純物が５原
子％以下の濃度に添加されたいわゆる炭素、または炭素
を主成分とする（以下本発明においては単に炭素という
）被膜を、下地材料特に絶縁性下地材料である窒化珪素
（Ｓｉ３Ｎ４−Ｘ Ｏ≦ｘ＜４）またはこれを主成分と
した被膜上に設けた複合体を設けんとしたものである。Furthermore, the hardness of the present invention is 1000 on the Vickers hardness.
Amorphous (non-crystalline) having a hardness similar to that of diamond, preferably 2500 to 200 g/mm" or more, or semi-amorphous (semi-amorphous) having a microcrystalline size of 5 to 200 kg/mm" or more. ) structure, or so-called carbon in which a halogen element such as hydrogen or fluorine is added to a concentration of 25 atom % or less, or a valent or V-valent impurity is added to a concentration of 5 atom % or less, or carbon as a main component A composite body in which a coating (hereinafter simply referred to as carbon in the present invention) is provided on a base material, particularly silicon nitride (Si3N4-X O≦x<4), which is an insulating base material, or a coating containing this as a main component. This is what we wanted to establish.
また本発明は、この炭素に■価の不純物であるホウ素を
０．１〜５原子％の濃度に添加し、Ｐ型の炭素を設け、
またＶ価の不純物であるリン、窒素を同様に０．１〜５
原子％の濃度に添加し、Ｎ型の炭素を設けることにより
、この基板上面の炭素を１×１０６〜５Ｘ１０′３Ωｃ
Ｉｌと半絶縁性の導電性にしたことを他の特徴としてい
る。In addition, the present invention adds boron, which is a valent impurity, to this carbon at a concentration of 0.1 to 5 atomic % to provide P-type carbon,
In addition, phosphorus and nitrogen, which are V-valent impurities, are similarly 0.1 to 5
By adding N-type carbon to a concentration of atomic%, the carbon on the top surface of this substrate can be reduced to 1×106 to 5×10′3Ωc.
Another feature is that it has semi-insulating conductivity with Il.
また本発明は基体として、特にＰＥＴ（ポリエチレンテ
レフタート）、ＰＥＳ、ＰＭＭＡ、 テフロン、エポキ
シ、ポリイミド等の有機樹脂または金属のメツシュ状の
テープキャリア、紙等テープ状キャリアを用いた。そし
てテープ状キャリア上に半導体金属、セラミックス、有
機樹脂、磁性材料が複合化した固体、特に半導体集積回
路、トランジスタ、ダイオード等の個別部品を仮付けま
たは配設し、ロール・ツー・ロール（ｒｏｌｌ ｔｏ
ｒａｌｌ以下ＲＴＲという）方式で移動しつつ、このテ
ープ状キャリア上の固体表面上に下地材料の第１の被膜
とこの被膜上に炭素膜の第２の被膜を形成せんとするも
のである。Further, in the present invention, as a substrate, in particular, a mesh-like tape carrier made of an organic resin such as PET (polyethylene tereftate), PES, PMMA, Teflon, epoxy, polyimide, or metal, or a tape-like carrier such as paper is used. Then, individual parts such as semiconductor metals, ceramics, organic resins, and magnetic materials, especially individual parts such as semiconductor integrated circuits, transistors, and diodes, are temporarily attached or arranged on the tape-shaped carrier, and then rolled to roll.
The purpose is to form a first coating of a base material on the solid surface of this tape-shaped carrier and a second coating of a carbon film on this coating.
特に複数種類の材料表面をもつ複合化した材料である半
導体集積回路、トランジスタ、ダイオド、抵抗、コンデ
ンサ等の個別部品に対し、本発明は有効である。The present invention is particularly effective for individual components such as semiconductor integrated circuits, transistors, diodes, resistors, capacitors, etc., which are made of composite materials having multiple types of material surfaces.
本発明は、耐摩耗材であり、かつ耐すべりやすさを表面
に必要とする電気部品に特に有効である。The present invention is particularly effective for electrical parts whose surfaces require wear-resistant materials and slip resistance.
以下に図面に従って本発明に用いられた複合体の作製方
法を記す。The method for producing the composite used in the present invention will be described below according to the drawings.
「実施例１」
第１図は本発明の炭素または炭素を主成分とする被膜を
形成するためのＲＴＲ方式のプラズマＣＶＤ装置の概要
を示す。"Example 1" FIG. 1 shows an outline of an RTR type plasma CVD apparatus for forming carbon or a film containing carbon as a main component according to the present invention.
図面において、ドーピング系（１０）において、キャリ
アガスである水素を（１０−１）より、反応性気体であ
る炭化水素気体、例えばエチレンを（１０−２）より、
Ｃ２Ｆ、を（１０−３）より、７価不純物のアンモニア
トリメチルアミン（Ｎ （Ｃｌｌｚ） ３） 、）リエ
チルアミン （Ｎ （Ｃ２）Ｉｓ） ｔ）を（１０−４
）よりバルブ（２８）、流量計（２９）をへて反応系（
３０）中にノズル（２５）より導入する。また下地材用
被膜形成用として窒素（１１−１）より、ジシラン（Ｓ
ｉｚｌｌｂ）を（１１−２）より、メタンまたはエチレ
ンを＜１ｌ−３）より、エツチング用にＳＦ、、ＮＦ３
またはＣ２Ｆ、を（１１−４）よりバルブ（２８）、流
量計（２９）をへて導入する。このノズルに至る前に、
反応性気体の励起用にマイクロ波エネルギを（２６）で
加えて予め活性化させることは有効である。In the drawing, in the doping system (10), hydrogen as a carrier gas is added to (10-1), and a hydrocarbon gas, such as ethylene, is added to (10-2) as a reactive gas.
C2F, from (10-3), the heptavalent impurity ammoniatrimethylamine (N (Cllz) 3),) ethylamine (N (C2)Is) t) is converted to (10-4)
), the reaction system (
30) through the nozzle (25). In addition, disilane (S
izllb) from (11-2), methane or ethylene from <1l-3), SF, NF3 for etching.
Alternatively, C2F is introduced from (11-4) through the valve (28) and the flow meter (29). Before reaching this nozzle,
It is advantageous to preactivate the reactive gas by adding microwave energy (26) for excitation of the reactive gas.
反応系（３０）では、第１のロール（４）より第２のロ
ール（５）に補助ロール（６） 、 （７）を経て移動
する。In the reaction system (30), it moves from the first roll (4) to the second roll (5) via auxiliary rolls (6) and (7).
この補助ロール（７）は固体を仮付または配設したテー
プ状キャリアの基体（１）にたるみがニないように一定
の張力（テンション）を与えるべく、バネ（２７）を具
備する。補助ロール間には、第１の電極（２）、被形成
面を具備するテープ状キャリア（１）。This auxiliary roll (7) is equipped with a spring (27) in order to apply a constant tension to the base (1) of the tape-shaped carrier on which the solid is temporarily attached or disposed so as not to sag. Between the auxiliary rolls is a tape-shaped carrier (1) comprising a first electrode (2) and a surface to be formed.
第２の電極（３）を有し、一対の電極（２） 、 （３
）間には高周波電極（１５）、マツチングトランス（１
６） 、直流バイアス電源（１７）より電気エネルギが
加えられ、プラズマ（４０）が発生する。排気系（２０
）は圧力調整バルブ（２５）、ターボ分子ポンプ（２２
）、 ロータリーポンプ（２３）をへて不要気体を排
気する。a second electrode (3), a pair of electrodes (2), (3
), there is a high frequency electrode (15) and a matching transformer (1
6) Electrical energy is applied from the DC bias power supply (17) to generate plasma (40). Exhaust system (20
) is a pressure adjustment valve (25), a turbo molecular pump (22)
), unnecessary gas is exhausted through the rotary pump (23).
これらの反応性気体は、反応空間（４０）で０．０１〜
Ｑ、３ｔｏｒｒ例えばＱ、 １ｔｏｒｒとし、高周波に
よる電磁エネルギにより０．１〜５ＫＨのエネルギを加
えられる。直流バイヤスを（１７）より、被形成面上に
−５０〜−６００ｖを加える。These reactive gases are present in the reaction space (40) at a concentration of 0.01 to
Q, 3 torr, for example, Q, 1 torr, and energy of 0.1 to 5 KH can be added by electromagnetic energy due to high frequency. A DC bias (17) of -50 to -600 V is applied onto the surface to be formed.
ジシランと窒素とを５ｉｚＬ／Ｎｚ＝０．０１〜０．１
として窒化珪素ＳｉＪ、−ｘ Ｏ≦Ｘ＜４を形成した。Disilane and nitrogen at 5izL/Nz=0.01~0.1
Silicon nitride SiJ was formed as -x O≦X<4.
さらにこの上に炭素膜を形成せんとする時、この第１の
被膜の形成に用いた反応性気体を完全に排除し、次に反
応性気体として、ＣｚＦａ：ＣＪｎ：Ｈ□−１：１：５
にＮｔ（：＋、 Ｎ（ＣＨ３） ３を添加して用いた。Furthermore, when a carbon film is to be formed on this, the reactive gas used to form the first film is completely removed, and then the reactive gas is CzFa:CJn:H□-1:1: 5
was used with the addition of Nt(:+, N(CH3)3).
第１の電極は冷却手段（９）を有し、冷却液体を（８）
より入れ、（８′）に排出させ、１５０〜−１００°Ｃ
に保持させる。かくしてプラズマにより被形成面上に例
えば窒化珪素膜とその上にビッカース硬度１０００Ｋｇ
／ｍｍ”以上を有するとともに、平滑性を有するＳＰ３
軌道を有するＣ−Ｃ結合を多数形成したアモルファス構
造または微結晶構造を有する炭素を生成させた。The first electrode has a cooling means (9) and a cooling liquid (8).
Twist and discharge at (8') at 150 to -100°C.
hold it. In this way, a silicon nitride film with a Vickers hardness of 1000 kg is formed on the surface to be formed by plasma.
/mm" or more and has smoothness
Carbon having an amorphous structure or a microcrystalline structure in which many C--C bonds having orbitals were formed was produced.
この電磁エネルギは５０Ｗ−１ｉｌｌを供給し、単位面
積あたり０．０３〜３Ｗ／ｃｍ”のプラズマエネルギを
加えた。このプラズマ密度が大きい場合、また予めマイ
クロ波で反応性気体が励起されている場合は、５〜２０
０人の大きさの微結晶性を有するセミアモルファス構造
の炭素を生成させることができた。This electromagnetic energy was supplied at 50W-1ill, and plasma energy of 0.03 to 3W/cm'' per unit area was added.When this plasma density is large, or when the reactive gas has been excited by microwaves in advance, is 5-20
Carbon having a semi-amorphous structure with microcrystallinity as large as 0 people could be produced.
成膜速度は１００〜１０００人／分を有し、特に表面温
度を一５０〜１５０°Ｃとし、負の直流バイアスを−１
００〜−３００ｖ加えた場合、ビッカース硬度として１
０００Ｋｇ／ｍｍ”以上の硬度を有しつつその成膜速度
は１００〜２００人／分を得た。The deposition rate is 100 to 1000 people/min, especially when the surface temperature is -50 to 150°C and the negative DC bias is -1.
When applying 00 to -300v, the Vickers hardness is 1
While having a hardness of 000 Kg/mm'' or more, the film forming rate was 100 to 200 people/min.
この反応生成物は、基体（１）が冷却媒体（９）により
所定の温度になった固体上面に被膜として形成される。This reaction product is formed as a film on the solid upper surface of the substrate (1) brought to a predetermined temperature by the cooling medium (9).
反応後の不純物は排気系（２０）よりターボ分子ポンプ
、ロータリーポンプを経て排気される。反応系は０．０
０１〜１０ｔｏｒｒ代表的には０．０１〜０．５ｔｏｒ
ｒに保持されており、マイクロ波（２６）、高周波のエ
ネルギ（１５）により、反応系内はプラズマ状態（４０
）が生成される。特に励起源がＩＧＨｚ以上、例えば２
．４５ＧＩＩｚの周波数にあっては、Ｃ−Ｈ結合より水
素を分離し、さらに周波源が０．１〜５０ Ｍ ＩＩ
ｚ例えば１３．５６ＭＨ２の周波数にあっては、Ｃ−Ｃ
結合、Ｃ＝Ｃ結合を分解し、Ｃ−Ｃ結合または−Ｃ−Ｃ
−結合を作り、炭素の不対結合手同志を互いに衝突させ
て共有結合させ、安定なダイヤモンド構造を局部的に有
した構造とさせ得る。Impurities after the reaction are exhausted from the exhaust system (20) via a turbo molecular pump and a rotary pump. The reaction system is 0.0
01~10torr typically 0.01~0.5torr
The reaction system is kept in a plasma state (40
) is generated. In particular, if the excitation source is above IGHz, e.g.
．． At the frequency of 45 GIIz, hydrogen is separated from the C-H bond, and the frequency source is 0.1 to 50 M II
zFor example, at a frequency of 13.56MH2, C-C
bond, C=C bond is decomposed, C-C bond or -C-C
- It is possible to create a bond and cause the unpaired bonds of carbon to collide with each other to form a covalent bond, resulting in a structure that locally has a stable diamond structure.
か（してテープ状キャリア上に半導体（シリコンウェハ
）、セラミックス、磁性体、金属または電気部品の固体
が仮付けまたは配設された固体表面上に炭素特に炭素中
に水素を２５モル％以下含存する炭素またＰ、Ｉまたは
Ｎ型の導電型を有する炭素被膜を形成させることができ
た。(Then, on the solid surface on which semiconductors (silicon wafers), ceramics, magnetic materials, metals, or electrical parts are temporarily attached or placed on a tape-shaped carrier, carbon, especially carbon containing 25 mol% or less of hydrogen, is applied. It was possible to form a carbon film having conductivity type of P, I or N type.
「実施例２」
第２図は実施例１の作製方法によって得られた下地被膜
である窒化珪素膜とその上に炭素がコーティングされた
固体である複合体の例である。"Example 2" FIG. 2 is an example of a solid composite consisting of a silicon nitride film, which is a base film, obtained by the manufacturing method of Example 1, and carbon coated thereon.
即ち第２図（＾）に示す如く、テープ状キャリア上に固
体である電気部品（４５）（この固体の形状は任意に被
コーテイング材によって決められる）等が仮付けされて
いる。これを第１図のＲＴＲ方式にてこの上面に窒化珪
素膜を２００人〜５μｍの厚さに形成し、さらに炭素を
２００人〜５μｍの厚さに設けた複合被膜（５０）を示
す。That is, as shown in FIG. 2(^), a solid electrical component (45) (the shape of this solid is arbitrarily determined depending on the material to be coated) etc. are temporarily attached onto a tape-shaped carrier. A composite coating (50) is shown in which a silicon nitride film is formed on the upper surface of this by the RTR method in FIG. 1 to a thickness of 200 to 5 μm, and carbon is further provided to a thickness of 200 to 5 μm.
さらにこれらの複合膜（５０）をコートした後、これら
固体（４５）をテープ状キャリア（４１）よりとりはず
し、第２図（Ｂ）に示すようにそれぞれ分離した。After further coating these composite membranes (50), these solids (45) were removed from the tape carrier (41) and separated as shown in FIG. 2(B).
かかる電気部品の一例として、ＳＭＴ用の半導体集積回
路、抵抗、コンデンサ、磁気ヘッド、サマルヘッド、密
着型イメージセンサがあげられる。Examples of such electrical components include semiconductor integrated circuits for SMT, resistors, capacitors, magnetic heads, thermal heads, and contact image sensors.
「実施例３」
本発明において、第１図のロールの上下を逆向きとし、
第３図（Ａ） 、 （Ｂ）に示す如く固体（４５）をテ
ープ状キャリアの上面に配設した。この固体上に実施例
１に示したプラズマＣＶＤ法により下地材料の第１の被
膜を形成した。さらに第１図においてそれに用いた気体
を排気した後、この上面に第１図のテープキャリアの働
きを逆向きにして移動しつつ炭素膜を流れ作業的にコー
ティングすることも有効である。"Example 3" In the present invention, the rolls shown in FIG. 1 are turned upside down,
As shown in FIGS. 3(A) and 3(B), a solid (45) was placed on the top surface of the tape-shaped carrier. A first coating of a base material was formed on this solid by the plasma CVD method shown in Example 1. Furthermore, it is also effective to coat the upper surface with a carbon film in an assembly line while moving the tape carrier in the reverse direction after the gas used in FIG. 1 has been exhausted.
かかる場合にも固体の一例として半導体のウェハ（４５
）例えばシリコンウェハの表面側に炭素膜をコートする
ことは有効である。この炭素膜は窒化珪素膜が形成され
る上に１×１０６〜５Ｘ１０”０ｃｍの半絶縁性を有し
、平滑性を有するため、静電気破壊に対する防止に有効
である。さらに炭素膜は熱伝導度がよいため、半導体集
積回路におけるパワートランジスタ部等の局部発熱を全
体に均一に逃がすことができる。そしてウェハの表面に
形成される場合、炭素膜は０．０２〜５μｍの厚さ、例
えば０．３〜１μｍの厚さに形成した。この厚さは下地
材料として窒化珪素膜を０．１〜１μｍの厚さに形成し
ているため密着性が阻害されずＩくでき、ひいては熱伝
導を大きくすることができた。In such a case, a semiconductor wafer (45
) For example, it is effective to coat the front surface of a silicon wafer with a carbon film. This carbon film is formed with a silicon nitride film, has a semi-insulating property of 1 x 106 to 5 x 10"0 cm, and has smoothness, so it is effective in preventing electrostatic breakdown. Furthermore, the carbon film has a high thermal conductivity. Since the carbon film has a good thickness, it is possible to uniformly dissipate localized heat generated in the power transistor part, etc. in a semiconductor integrated circuit to the entire surface.When formed on the surface of a wafer, the carbon film has a thickness of 0.02 to 5 μm, for example, 0.02 to 5 μm. The film was formed to a thickness of 3 to 1 μm.This thickness is because the silicon nitride film is formed as a base material to a thickness of 0.1 to 1 μm, so the adhesion is not inhibited and the thickness can be reduced, which in turn increases heat conduction. We were able to.
さらに、選択除去用レジストを選択的にコートし、酸化
物気体のプラズマエツチングにより炭素膜および窒化珪
素膜に関し、ボンディングバット部のみ除去した。この
後、これらの上のレジストを除去した。そして炭素膜を
ファイナルコート膜としてＩＣチップの上面に構成させ
た。Furthermore, a resist for selective removal was selectively coated, and only the bonding butt portions of the carbon film and silicon nitride film were removed by plasma etching with oxide gas. After this, the resist on these was removed. Then, a carbon film was formed as a final coat film on the upper surface of the IC chip.
このコーティングの後、ウェハのプローブテストを行い
、さらにそれぞれのＩＣチップにするため、スクライブ
、ブレイク工程を経て、各半導体チップの裏面に炭素膜
がコートされた状態でダイボンディング、ワイヤボンデ
ィングをして完成させた。After this coating, a probe test is performed on the wafer, and in order to make each IC chip, it goes through a scribing and breaking process, and then die bonding and wire bonding are performed with the back side of each semiconductor chip coated with a carbon film. Completed.
「実施例４」
この実施例においては、下地材料の被膜および炭素膜を
半導体集積回路が予め形成されたチップにスクライブ、
ブレイクされたシリコン半導体の上表面および裏面のす
べてにわたり第２図（Ｂ）に示す如く形成した。この場
合、シリコンチップのパッド部に予め金等で°バンブ（
外部接続点）を作り、この部分をテープキャリアに仮付
した。するとこの仮付した部分のみには複合膜が形成さ
れないため、第２図（Ｂ）に示した如く、テープキャリ
アより固体を分離した時もバンブを除きすべてを静電破
壊防止用の複合膜が覆うことができる。"Example 4" In this example, a base material coating and a carbon film are scribed onto a chip on which a semiconductor integrated circuit has been formed in advance.
A structure was formed over the entire top and bottom surfaces of the broken silicon semiconductor as shown in FIG. 2(B). In this case, the pad part of the silicon chip should be pre-bubbled with gold, etc.
(external connection point) and temporarily attached this part to the tape carrier. Then, since the composite film is not formed only on this temporarily attached part, even when the solid is separated from the tape carrier, the composite film for preventing electrostatic damage is formed on everything except the bumps, as shown in Figure 2 (B). Can be covered.
かくすると、パワートランジスタ等により局部加熱をさ
らに速やかに全体に広げることができた。In this way, local heating could be spread over the entire area more quickly using power transistors and the like.
加えて、ナトリウムイオンに対するブロッキングも可能
となった。もちろんこの炭素膜はアルミニューム配線間
またこの炭素膜上に他の酸化珪素膜等を残存させてもよ
い。In addition, blocking against sodium ions has become possible. Of course, another silicon oxide film or the like may be left between the aluminum wirings or on this carbon film.
「効果」
本発明は、ＳＭＴ等一部に異種材料がその表面をこすっ
て走行する電気用部材にきわめて有効である。特にこの
炭素膜は熱伝導率が大きいため、高速テープ状キャリア
走行により発生する熱を全体に均一に逃がし、局部的な
昇温およびそれに伴う磁気ヘッドの特性劣化を防ぐこと
ができる。そのめ、耐摩耗性、耐静電気破壊性、裔熱伝
導性、炭素膜特有の高平滑性等、多くの特性を併用して
有効に用いている。"Effects" The present invention is extremely effective for electrical components, such as SMTs, in which a dissimilar material rubs against the surface of the electrical component. In particular, since this carbon film has a high thermal conductivity, it is possible to uniformly dissipate the heat generated by high-speed tape-shaped carrier travel throughout the film, thereby preventing localized temperature rise and accompanying deterioration of the characteristics of the magnetic head. Therefore, many properties such as abrasion resistance, electrostatic breakdown resistance, thermal conductivity, and high smoothness unique to carbon films are effectively used in combination.
以上の説明より明らかな如く、本発明は有機樹脂または
それに複合化させたガラス、磁性体、金属またはセラミ
ック、さらに半導体またはそれらの複合体を構成し、そ
れら複合材料の表面を有する固体表面に下地材料である
窒化珪素膜とその上の炭素または炭素を主成分とした被
膜をコーティングして設けたものである。As is clear from the above description, the present invention comprises an organic resin or a glass, magnetic material, metal or ceramic composited therewith, a semiconductor or a composite thereof, and a solid surface having a surface of the composite material as a base. It is provided by coating a silicon nitride film as a material with carbon or a film mainly composed of carbon.
この複合体は他の多くの実施例にみられる如くその応用
は計り知れないものであり、有機材料を下地材料とし、
その上に炭素をともに１５０°Ｃ以下の低温で形成させ
てもよい。The applications of this composite, as seen in many other examples, are immeasurable.
Carbon may also be formed thereon at a low temperature of 150°C or less.
本発明は、固体に対する密着性が下地被膜を設けたこと
によりきわめて優れているのが特徴である。The present invention is characterized in that adhesion to solids is extremely excellent due to the provision of a base coat.
本発明におけるセラミックはアルミナ、ジルコニア、カ
ーボランダムでもよ（、また旧ＣａＢａＣｕＯ等の超伝
導材料、ＹＢＣＯ系の酸化物超伝導材料にも適用できる
。The ceramic in the present invention may be alumina, zirconia, or carborundum (also applicable to superconducting materials such as old CaBaCuO and YBCO-based oxide superconducting materials).
またｔｎ性体はサマリューム、コバルト等の希土ＭＧｆ
１石、アモルファス磁性体、酸化鉄またはこれにニッケ
ル、クロム等がコートされた形状異方形の磁性体であっ
てもよい。In addition, tn-based substances include rare earth MGf such as samarium and cobalt.
It may be a single stone, an amorphous magnetic material, iron oxide, or an anisotropic magnetic material coated with nickel, chromium, or the like.
第１図は本発明の下地被膜と炭素または炭素を主成分と
する被膜とを基体の被形成面上に作製するロール・ツー
・ロール方式の製造装置の概要を示す。
第２図および第３図は本発明の複合体の実施例を示す。FIG. 1 shows an outline of a roll-to-roll manufacturing apparatus for producing the base coating of the present invention and carbon or a coating mainly composed of carbon on a surface of a substrate. Figures 2 and 3 show examples of composites of the invention.
Claims (3)
る第１の被膜と、該被膜上に炭素または炭素を主成分と
する第２の被膜とを設けたことを特徴とする電子装置。1. 1. An electronic device comprising: a first film serving as a base film covering a solid body such as a semiconductor integrated circuit; and a second film comprising carbon or carbon as a main component provided on the first film.
主成分とする被膜は１×１０＾６〜５×１０＾１＾３Ω
ｃｍの比抵抗を有することを特徴とする電子装置。2. In claim 1, carbon or a coating mainly composed of carbon has a resistance of 1 x 10^6 to 5 x 10^1^3 Ω.
An electronic device characterized in that it has a resistivity of cm.
素（Ｓｉ＿３Ｎ＿４＿−＿Ｘ，０≦Ｘ＜４）またはこれ
を主成分とする薄膜よりなることを特徴とする電子装置
。3. An electronic device according to claim 1, wherein the base film is made of silicon nitride (Si_3N_4_-_X, 0≦X<4) or a thin film containing silicon nitride as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277710A JP2585758B2 (en) | 1988-11-02 | 1988-11-02 | Electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277710A JP2585758B2 (en) | 1988-11-02 | 1988-11-02 | Electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123764A true JPH02123764A (en) | 1990-05-11 |
| JP2585758B2 JP2585758B2 (en) | 1997-02-26 |
Family
ID=17587236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63277710A Expired - Lifetime JP2585758B2 (en) | 1988-11-02 | 1988-11-02 | Electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2585758B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033979A (en) * | 1994-09-12 | 2000-03-07 | Nec Corporation | Method of fabricating a semiconductor device with amorphous carbon layer |
| KR100296521B1 (en) * | 1998-05-26 | 2001-11-30 | 구자홍 | Method of manufacturing magnetic head slider |
| US6441839B1 (en) | 1999-10-29 | 2002-08-27 | Kyocera Corporation | Thermal head |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5577582A (en) * | 1978-12-08 | 1980-06-11 | Hitachi Ltd | Dot printer |
| JPS5848428A (en) * | 1981-09-17 | 1983-03-22 | Semiconductor Energy Lab Co Ltd | Compound material having carbon film and manufacture therefor |
| JPS6135509A (en) * | 1984-07-28 | 1986-02-20 | Anelva Corp | Substrate heating method |
-
1988
- 1988-11-02 JP JP63277710A patent/JP2585758B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5577582A (en) * | 1978-12-08 | 1980-06-11 | Hitachi Ltd | Dot printer |
| JPS5848428A (en) * | 1981-09-17 | 1983-03-22 | Semiconductor Energy Lab Co Ltd | Compound material having carbon film and manufacture therefor |
| JPS6135509A (en) * | 1984-07-28 | 1986-02-20 | Anelva Corp | Substrate heating method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033979A (en) * | 1994-09-12 | 2000-03-07 | Nec Corporation | Method of fabricating a semiconductor device with amorphous carbon layer |
| KR100296521B1 (en) * | 1998-05-26 | 2001-11-30 | 구자홍 | Method of manufacturing magnetic head slider |
| US6441839B1 (en) | 1999-10-29 | 2002-08-27 | Kyocera Corporation | Thermal head |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2585758B2 (en) | 1997-02-26 |
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