JPH03268477A - Manufacture of printed wiring board - Google Patents
Manufacture of printed wiring boardInfo
- Publication number
- JPH03268477A JPH03268477A JP6730890A JP6730890A JPH03268477A JP H03268477 A JPH03268477 A JP H03268477A JP 6730890 A JP6730890 A JP 6730890A JP 6730890 A JP6730890 A JP 6730890A JP H03268477 A JPH03268477 A JP H03268477A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- thin film
- graphite
- metal
- diamond thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010432 diamond Substances 0.000 claims abstract description 61
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 26
- 239000010439 graphite Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000002470 thermal conductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
熱伝導率の高いダイヤモンド薄膜を絶縁膜として基板上
に形成したプリント配線板に関し、より詳しくは、導電
性の配線を有するダイヤモンドコートプリント配線板の
製造方法に関し、ダイヤモンド薄膜上に金属配線を密着
性良く形成することを目的とし、
基板表面をダイヤモンド薄膜で被覆したダイヤモンドコ
ートプリント配線板の製造において、ダイヤモンド薄膜
の表面をエネルギービームによって局所的に加熱してグ
ラファイト領域に相変化させ、次に該グラファイト領域
上に選択的に配線金属を被覆するように構成する。[Detailed Description of the Invention] [Summary] This invention relates to a printed wiring board in which a diamond thin film with high thermal conductivity is formed on a substrate as an insulating film, and more specifically, a method for manufacturing a diamond coated printed wiring board having conductive wiring. For the purpose of forming metal wiring on a diamond thin film with good adhesion, the surface of the diamond thin film is locally heated with an energy beam in the production of diamond-coated printed wiring boards in which the substrate surface is coated with a diamond thin film. The graphite region is subjected to a phase change, and then a wiring metal is selectively coated on the graphite region.
本発明は、熱伝導率の高いダイヤモンド薄膜を絶縁膜と
して基板上に形成したプリント配線板に関し、より詳し
くは、導電性の配線を有するダイャモンドコートプリン
ト配線板の製造方法に関する。The present invention relates to a printed wiring board in which a diamond thin film with high thermal conductivity is formed as an insulating film on a substrate, and more particularly to a method for manufacturing a diamond coated printed wiring board having conductive wiring.
ダイヤモンドは絶縁体でありながら、熱伝導率は、あら
ゆる物質の中で最も高い。従って、ヒートシンクとして
の応用が注目されている。ヒートシンクとしての一つの
適用形態としてプリント配線板が考えられる。しかしな
がら、ダイヤモンドのみでプリント板を形成するのは、
技術的にも価格的にも困難である。そこで、８１基板等
、熱伝導率の高い材料の上に絶縁体であるダイヤモンド
薄膜を被覆（コート）シたものは比較的安価に製造でき
、実用的である。ダイヤモンド薄膜の基板への被覆は、
例えば、電子材料、１９８９年８月号、Ｖａｔ、２８．
Ｎα８での特集「ダイヤモンド薄膜の電子工業への応
用Ｊ 、ｐｐ、 ２２−６７に開示されている。Although diamond is an insulator, it has the highest thermal conductivity of all materials. Therefore, its application as a heat sink is attracting attention. A printed wiring board can be considered as one form of application as a heat sink. However, forming a printed board using only diamonds is
This is difficult both technically and economically. Therefore, a material having a high thermal conductivity, such as an 81 substrate, coated with a diamond thin film as an insulator can be produced relatively inexpensively and is practical. Coating a substrate with a diamond thin film is
For example, Electronic Materials, August 1989 issue, Vat, 28.
It is disclosed in the special issue of Nα8, “Applications of Diamond Thin Films to Electronic Industry J, pp. 22-67.
このダイヤモンドを高温に熱すると、比較的低抵抗のグ
ラファイトに転移するたｔ、これを配線に利用すること
ができる。しかし、高性能のプリント配線板にするには
グラファイトの部分に選択的に金属−（配線）を付加す
る等の方法によって、さらに低抵抗化することが望まし
い。When this diamond is heated to a high temperature, it transforms into graphite, which has a relatively low resistance, and can be used for wiring. However, in order to make a high-performance printed wiring board, it is desirable to further reduce the resistance by selectively adding metal (wiring) to the graphite portion.
一般には、熱的不良導体である合成樹脂がプリント配線
基板に用いられているために、その放熱性は悪く、実装
密度増大に伴う発熱密度増加に有効に対処できないでい
る。このたぬ、高集積化が進むなどで発熱の大きな半導
体素子を搭載するプリント配線板には、金属基板を用い
られることが提案されている。具体的には、アルミニウ
ム板の表面に絶縁体のアルマイト膜を形成したものなど
が使われている。しかし、アルマイトは熱的に不良導体
であるため、放熱効果は不十分である。この点、ダイヤ
モンド薄膜を熱的良導体の上に設けたものは、ヒートシ
ンクとしての効果は大きい。Generally, synthetic resins, which are thermally poor conductors, are used for printed wiring boards, so their heat dissipation is poor and it is not possible to effectively cope with the increase in heat generation density that accompanies an increase in packaging density. As a result of increasing integration, it has been proposed that metal substrates be used for printed wiring boards on which semiconductor elements that generate a large amount of heat are mounted. Specifically, an aluminum plate with an insulating alumite film formed on its surface is used. However, since alumite is a poor thermal conductor, its heat dissipation effect is insufficient. In this respect, a diamond thin film provided on a thermally good conductor is highly effective as a heat sink.
一方、ダイヤモンド薄膜の上に金属配線を形成すること
が容易でないという問題がある。On the other hand, there is a problem in that it is not easy to form metal wiring on a diamond thin film.
プリント配線板に要求される電気的絶縁性と放熱効率と
を両立させる基板を用い、その上に、どうやって金属配
線パターンを形成するかが、ダイヤモンドコートプリン
ト配線板を製造する上で解決すべき課題である。The issue to be solved in manufacturing diamond-coated printed wiring boards is how to form metal wiring patterns on a substrate that achieves both the electrical insulation and heat dissipation efficiency required for printed wiring boards. It is.
すなわち、熱的良導体でありながら電気的絶縁体である
ダイヤモンドの薄膜を熱的良導体の上にコーティングす
ることによりプリント配線基板を形成するわけであるが
、ダイヤモンドの上には、密着性良く金属膜を被覆（コ
ーティング）することは容易でないという問題がある。In other words, a printed wiring board is formed by coating a thin film of diamond, which is a good thermal conductor but also an electrical insulator, on top of a good thermal conductor. There is a problem in that it is not easy to coat.
上述の課題が、基板表面をダイヤモンド薄膜で被覆した
ダイヤモンドコートプリント配線板の製造において、ダ
イヤモンド薄膜の表面をエネルギービームによって局所
的に加熱してグラファイト領域に相変化させ、次に該グ
ラファイト領域上に選択的に配線金属を被覆することを
特徴とするプリント配線板の製造方法によって解決され
る。The above-mentioned problem is solved in the production of diamond-coated printed wiring boards in which the substrate surface is coated with a diamond thin film. The problem is solved by a method for manufacturing a printed wiring board characterized by selectively coating wiring metal.
被覆形成したダイヤモンド薄膜を局所的に高温加熱して
グラファイト領域（配線パターン形状部分）を形成し、
この領域を金属配線の下地に利用するわけである。グラ
ファイトのみでは導電性は充分でないので、その上に金
属を被覆させて配線を構成する。多くの金属はグラファ
イト上には密着性良く被覆形成できるが、ダイヤモンド
には密着力が弱いという性質があるので、これを利用し
て、全面金属被覆後、ダイヤモンド上の金属膜を機械的
除去し、グラファイト上のみに選択的に金属被膜を残す
ようにすることができる。The coated diamond thin film is locally heated to a high temperature to form a graphite region (wiring pattern shaped part),
This area is used as the base for metal wiring. Graphite alone does not have sufficient conductivity, so a metal is coated on top of it to form wiring. Many metals can be coated on graphite with good adhesion, but diamond has a property of weak adhesion. Taking advantage of this, the metal film on diamond can be mechanically removed after the entire surface has been coated with metal. , it is possible to selectively leave a metal coating only on graphite.
なお、グラファイト領域形成に、コンピュータ制御によ
るレーザ走査または電子線描画等を用いることができる
ので、プリント配線板作成の簡便化がはかれる。Note that computer-controlled laser scanning, electron beam lithography, or the like can be used to form the graphite region, thereby simplifying the production of the printed wiring board.
以下、添付図面を参照して、本発明の実施態様例によっ
て、本発明の詳細な説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail by way of embodiments with reference to the accompanying drawings.
第１図〜第４図に示す工程を経て金属配線を有するダイ
ヤモンドコートプリント配線板が次のようにして、本発
明にしたがって、製造される。A diamond-coated printed wiring board having metal wiring is manufactured according to the present invention through the steps shown in FIGS. 1 to 4 as follows.
ダイヤモンド薄膜形成法には、高圧合成法と気相成長法
とがあるが、本発明のダイヤモンドコーティングには、
気相成長法を用いた。この場合、通常、高温（８００〜
１０００℃）でダイヤモンド膜形成を行うので、熱膨張
係数がダイヤモンドと大幅に異なる基板の上にダイヤモ
ンドを成長させることはできない。そこで、ダイヤモン
ド成長が可能で、熱伝導率の高い基板としてシリコン（
Ｓｌ）基板１ （第１図）を用いた。メタン（ＣＨ４）
と水素（Ｈ２）とを原料ガスとするＤＣプラズマジェッ
ト法によって８１基板１の上にダイヤモンドの薄膜２を
５０声の厚さに形成した。このときのガス流量は、Ｈ２
ＳＯ１／ｍｉｎ ５ＣＨａ Ｏ，７Ｒ／ｍｉｎであり、
チャンバー内ガス圧を５０Ｔｏｒｒ、アーク電圧をｌｌ
０Ｖ、７−り電流を３０Ａ１ノズル−基板間距離を２０
市として、５０分間製膜処理した。製膜速度は６０７＝
−／ ｈであった。There are high-pressure synthesis methods and vapor phase growth methods for forming diamond thin films, but the diamond coating of the present invention uses
A vapor phase growth method was used. In this case, it is usually a high temperature (800~
Since the diamond film is formed at a temperature (1000° C.), diamond cannot be grown on a substrate whose coefficient of thermal expansion is significantly different from that of diamond. Therefore, silicon (
Sl) Substrate 1 (Fig. 1) was used. Methane (CH4)
A diamond thin film 2 was formed to a thickness of 50 mm on an 81 substrate 1 by a DC plasma jet method using hydrogen (H2) and hydrogen (H2) as source gases. The gas flow rate at this time is H2
SO1/min 5CHa O,7R/min,
Gas pressure in the chamber is 50 Torr, arc voltage is 11
0V, 7-current: 30A1 nozzle-substrate distance: 20
Film forming treatment was carried out for 50 minutes. Film forming speed is 607=
-/h.
このようにして得られたダイヤモンド薄膜は、表面の凹
凸が大きく、ダイヤモンド砥石により表面が平滑になる
まで研磨した。そして、第１図に示すように、ダイヤモ
ンド薄膜２の表面に不活性雰囲気下でｌ０Ｊ−φに絞っ
たレーザビーム３を５０ｍ／Ｓの速度で走査照射した。The thus obtained diamond thin film had a large surface unevenness, and was polished with a diamond grindstone until the surface became smooth. Then, as shown in FIG. 1, the surface of the diamond thin film 2 was scanned and irradiated with a laser beam 3 focused at 10J-φ at a speed of 50 m/s in an inert atmosphere.
レーザビーム（光）３による配線パターン描画は、レー
ザ光源（出力５Ｗのアルゴンレーザ）４からのレーザビ
ームをシャッタ５、ガルバノミラ−６で電子計算機７に
よって制御し、同時に３１基板１の移動（矢印Ａ）をも
電子計算機７にて制御して行なった。レーザ走査部８は
若干黒ぼく変色しており、グラファイトに変えられてお
り、その抵抗を測定したところ、３Ω／ ｃｍ程度の抵
抗値であった。このグラファイト領域（レーザ走査部）
８の深さは１５ｎｍであって、ダイヤモンド薄膜２の厚
さの約３０％であった。なお、グラファイト領域８の深
さがＳｉ基板１に達することは、ダイヤモンド薄膜２が
絶縁膜とならないことになるので、避けなければいけな
い。To draw a wiring pattern using a laser beam (light) 3, a laser beam from a laser light source (argon laser with an output of 5 W) 4 is controlled by an electronic computer 7 using a shutter 5 and a galvanometer mirror 6, and at the same time the movement of the substrate 1 (arrow A) is performed. ) was also controlled by the electronic computer 7. The laser scanning section 8 was slightly discolored and had been replaced with graphite, and when its resistance was measured, it was found to be about 3 Ω/cm. This graphite area (laser scanning part)
The depth of the diamond film 8 was 15 nm, which was about 30% of the thickness of the diamond thin film 2. Note that the depth of the graphite region 8 should be avoided to reach the Si substrate 1 because this means that the diamond thin film 2 will not become an insulating film.
次に、第２図に示すように、ダイヤモンド薄膜２の全面
に金を真空蒸着によって堆積して（飛着させて）、厚さ
５−の金膜１０を形成した。Next, as shown in FIG. 2, gold was deposited (fly-deposited) on the entire surface of the diamond thin film 2 by vacuum evaporation to form a gold film 10 with a thickness of 5 mm.
この金膜１０を有するダイヤモンドコート配線板を、第
３図に示すように、イソプロピルアルコール１２０入っ
たビーカニ３内に沈め、これを超音波洗浄装置１４の水
１５内に入れて３０分間超音波洗浄した。As shown in FIG. 3, this diamond-coated wiring board having the gold film 10 is submerged in a beaker 3 containing 120 isopropyl alcohol, and then placed in water 15 of an ultrasonic cleaning device 14 for 30 minutes of ultrasonic cleaning. did.
この結果として、第４図に示すように、グラファイト領
域８の上の金は剥離せずに付着しているが、ダイヤモン
ド上の金は完全に剥離していた。この金配線１０Ａでコ
ートした配線（幅１０廁）の抵抗を測定したところ、０
．０５Ω／ Ｃｍであった。回路配線として充分適用で
きる抵抗値である。As a result, as shown in FIG. 4, the gold on the graphite region 8 adhered without being peeled off, but the gold on the diamond was completely peeled off. When we measured the resistance of the wire (width 10 m) coated with 10A of gold wire, it was found to be 0.
．． The resistance was 0.05Ω/cm. This resistance value is sufficient for use as circuit wiring.
本発明は、上述の実施例に限定されるものでないことは
云うまでもなく、基板にＳｉ より熱伝導率の良い銅（
Ｃｕ）等を用い、何らかの手法でダイヤモンドコーティ
ングができれば、ヒートシンクとしての効果は、更に向
上し、プリント配線基板としては、望ましい。ダイヤモ
ンドコーテイング膜形成法も、上述のＤＣプラズマジェ
ット法に限定されるものではなく、マイクロ波プラズマ
ＣＶＤ法をはじめ、他のダイヤモンド膜形成法も適用可
能である。被覆しかつ金属配線となる金属材料にはＡβ
、Ｃｕなども使用できるが、金はダイヤモンドからの剥
離性が良いので望ましい。金属被膜手段も、真空蒸着の
他に、スパッタ、メッキ、さらには有機金属（例えばト
リメチルアルミ）ＣＶＤが採用できる。エネルギービー
ムも、上述のレーザビームの代わりに電子線を用いるこ
とができ、真空中での電子線描画によって、グラファイ
ト領域を形成することができる。さらに、ダイヤモンド
膜上の金属被膜を除去する方法も、上述超音波洗浄の代
わりにガーゼで強くこすってもグラファイト領域以外を
除去することができる。カミソリの刃等で引っかいても
ダイヤモンド上の金属被膜は除去され、グラファイト上
の金属被膜のみが残る。また、粘着テープを貼り付け、
そして、はがすことによっても、ダイヤモンド上の金属
被膜を容易に剥離、除去することができる。Needless to say, the present invention is not limited to the above-described embodiments, and the substrate is made of copper (which has a better thermal conductivity than Si).
If diamond coating could be applied by some method using Cu), the effect as a heat sink would be further improved, and it would be desirable as a printed wiring board. The diamond coating film forming method is not limited to the above-mentioned DC plasma jet method, and other diamond film forming methods such as the microwave plasma CVD method can also be applied. Aβ is used in the metal material that covers and becomes the metal wiring.
, Cu, etc. can also be used, but gold is preferable because it has good peelability from diamond. As for the metal coating means, in addition to vacuum deposition, sputtering, plating, and organic metal (for example, trimethylaluminum) CVD can be employed. As for the energy beam, an electron beam can be used instead of the above-mentioned laser beam, and the graphite region can be formed by electron beam drawing in a vacuum. Furthermore, as a method for removing the metal film on the diamond film, areas other than the graphite region can be removed by strongly rubbing with gauze instead of the above-mentioned ultrasonic cleaning. Even when scratched with a razor blade, the metal coating on the diamond is removed, leaving only the metal coating on the graphite. Also, paste the adhesive tape,
Also, by peeling it off, the metal coating on the diamond can be easily peeled off and removed.
上述したように、本発明によれば、絶縁性であって熱伝
導率が物質の中で最も高いダイヤモンドの薄膜を全表面
に被覆しているので放熱効果が得られ、かつダイヤモン
ド表面には付着しがたい金属を配線パターンのグラファ
イト領域形成でその上に金属を付着力強く残すことによ
って必要な導電率の金属配線が得られる。本発明では、
電子計算機制御によってレーザ等で基板に直接配線が描
画できるので、回路配線形成が非常に簡便になる。As mentioned above, according to the present invention, the entire surface is coated with a thin film of diamond, which is insulating and has the highest thermal conductivity among substances, so a heat dissipation effect can be obtained, and the diamond surface has no adhesion. Metal wiring with the required conductivity can be obtained by strongly adhering metal to a difficult metal by forming a graphite region in the wiring pattern. In the present invention,
Since wiring can be drawn directly on the substrate using a laser or the like under electronic computer control, circuit wiring formation becomes extremely simple.
第１図は、本発明の製造方法にしたがって、レーザビー
ム描画しているダイヤモンドコートプリント配線板の斜
視図であり、
第２図は、全面に金属被覆したダイヤモンドコートプリ
ント配線板の概略断面図であり、第３図は、超音波洗浄
中のダイヤモンドコートプリント配線板の概略断面図で
あり、
第４図は、完成したダイヤモンドコートプリント配線板
の概略断面図である。
１・・・基板、
３・・・レーザビーム、
１０・・・金膜、
１４・・・超音波洗浄装置。
２・・・ダイヤモンド薄膜、
訃・・グラファイト領域、
１０Ａ・・・金属配線、FIG. 1 is a perspective view of a diamond-coated printed wiring board subjected to laser beam drawing according to the manufacturing method of the present invention, and FIG. 2 is a schematic cross-sectional view of a diamond-coated printed wiring board whose entire surface is coated with metal. 3 is a schematic cross-sectional view of a diamond-coated printed wiring board during ultrasonic cleaning, and FIG. 4 is a schematic cross-sectional view of a completed diamond-coated printed wiring board. DESCRIPTION OF SYMBOLS 1...Substrate, 3...Laser beam, 10...Gold film, 14...Ultrasonic cleaning device. 2...Diamond thin film, Grain...Graphite area, 10A...Metal wiring,
Claims (4)
ドコートプリント配線板の製造において、前記ダイヤモ
ンド薄膜の表面をエネルギービームによって局所的に加
熱してグラファイト領域に相変化させ、次に該グラファ
イト領域上に選択的に配線金属を被覆することを特徴と
するプリント配線板の製造方法。1. In manufacturing a diamond-coated printed wiring board in which the substrate surface is coated with a diamond thin film, the surface of the diamond thin film is locally heated with an energy beam to cause a phase change to a graphite region, and then selective wiring is performed on the graphite region. A method for manufacturing a printed wiring board, characterized by coating a metal.
ことを特徴とする請求項１記載の製造方法。2. 2. The manufacturing method according to claim 1, wherein the energy beam is a laser beam or an electron beam.
メッキ又は有機金属ＣＶＤのいずれかで行なうことを特
徴とする請求項１記載の製造方法。3. The wiring metal coating is vacuum evaporated, sputtered,
2. The manufacturing method according to claim 1, wherein the manufacturing method is carried out by either plating or organometallic CVD.
超音波洗浄にて除去して、前記グラファイト領域の上に
前記配線金属を残すことを特徴とする請求項３記載の製
造方法。4. 4. The manufacturing method according to claim 3, wherein the wiring metal coated on the surface of the diamond thin film is removed by ultrasonic cleaning to leave the wiring metal on the graphite region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6730890A JPH03268477A (en) | 1990-03-19 | 1990-03-19 | Manufacture of printed wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6730890A JPH03268477A (en) | 1990-03-19 | 1990-03-19 | Manufacture of printed wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03268477A true JPH03268477A (en) | 1991-11-29 |
Family
ID=13341255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6730890A Pending JPH03268477A (en) | 1990-03-19 | 1990-03-19 | Manufacture of printed wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03268477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012121751A (en) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | Graphene-diamond laminate |
| CN112839449A (en) * | 2021-01-06 | 2021-05-25 | 南昌大学 | Diamond circuit board preparation method based on laser direct processing |
| CN116916547A (en) * | 2023-09-14 | 2023-10-20 | 中国科学院宁波材料技术与工程研究所 | Diamond-based packaging circuit board and preparation method thereof |
-
1990
- 1990-03-19 JP JP6730890A patent/JPH03268477A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012121751A (en) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | Graphene-diamond laminate |
| CN112839449A (en) * | 2021-01-06 | 2021-05-25 | 南昌大学 | Diamond circuit board preparation method based on laser direct processing |
| CN116916547A (en) * | 2023-09-14 | 2023-10-20 | 中国科学院宁波材料技术与工程研究所 | Diamond-based packaging circuit board and preparation method thereof |
| CN116916547B (en) * | 2023-09-14 | 2023-12-05 | 中国科学院宁波材料技术与工程研究所 | Diamond-based packaging circuit board and preparation method thereof |
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