JPH02119241A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH02119241A
JPH02119241A JP27343088A JP27343088A JPH02119241A JP H02119241 A JPH02119241 A JP H02119241A JP 27343088 A JP27343088 A JP 27343088A JP 27343088 A JP27343088 A JP 27343088A JP H02119241 A JPH02119241 A JP H02119241A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
ball
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27343088A
Other languages
Japanese (ja)
Inventor
Masao Inoue
雅夫 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP27343088A priority Critical patent/JPH02119241A/en
Publication of JPH02119241A publication Critical patent/JPH02119241A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent wiring parts from being concentrated on the inside of a semiconductor integrated circuit by means of a simple constitution and to obtain a semiconductor integrated circuit device whose integration density is high by a method wherein cell ball shells composed of a plurality of fundamental cells are arranged in the shape of a concentric ball. CONSTITUTION:Cell ball shells 13 composed of a plurality of fundamental cells are arranged to be a concentric ball shape. For example, fundamental cell shells 13 composed of a plurality of fundamental cells are installed at the outside of a spherical semiconductor substrate 12; an outer frame is installed at their outermost side. Thereby, the fundamental cells are arranged and constituted in the shape of a ball shell; there is no distinction between a peripheral part and the inside; accordingly, an imbalance of a congestion degree of wiring parts between the inside and the peripheral part of the semiconductor integrated circuit device is not caused as compared with a conventional semiconductor integrated circuit device constituted on a plane semiconductor substrate. In addition, wiring parts between the individual cells can be arranged in various wiring routes because the individual cells are arranged to be a ball shape; a problem of unwired parts is hard to be caused.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体集積回路装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a semiconductor integrated circuit device.

従来の技術 従来の半導体集積回路装置は、円板状の半導体ウェハー
面上に平面的に形成されていた。2. Description of the Related Art Conventional semiconductor integrated circuit devices have been formed planarly on a disk-shaped semiconductor wafer.

発明が解決しようとする課題 以上のような従来の半導体集積回路装置では、平面的に
半導体回路を集積していたため、周辺部の基本セル間の
配線に比べて、内部の基本セル間の配線の配線密度が高
くなり、最悪の場合、未配線の問題が生じて配線をやり
直さなければならな（なり、半導体集積回路装置におけ
るボトルネックとなっていた。したがって半導体集積回
路の集積度をなかなか上げられなかった。Problems to be Solved by the Invention In the conventional semiconductor integrated circuit devices as described above, semiconductor circuits are integrated in a two-dimensional manner, so the wiring between internal basic cells is smaller than the wiring between basic cells in the peripheral area. As wiring density increases, in the worst case scenario, a problem of unwired wiring occurs and the wiring has to be redone (this has become a bottleneck in semiconductor integrated circuit devices. Therefore, it has been difficult to increase the degree of integration of semiconductor integrated circuits). There wasn't.

本発明は、かかる点に鑑みてなされたもので、簡単な構
成で、半導体集積回路内部に配線が集中するのを防ぎ、
集積度の高い半導体集積回路装置を提供することを目的
としている。The present invention has been made in view of these points, and has a simple configuration that prevents wiring from concentrating inside a semiconductor integrated circuit.
The purpose is to provide a semiconductor integrated circuit device with a high degree of integration.

課題を解決するための手段 本発明は上記目的を達成するため、複数の基本セルから
なるセル球殻を同心球状１′ニー配列形成するよう構成
した半導体集積回路装置である。Means for Solving the Problems In order to achieve the above object, the present invention provides a semiconductor integrated circuit device in which cell spherical shells each consisting of a plurality of basic cells are arranged in a concentric spherical 1' knee arrangement.

作用 本発明は上記した構成により、半導体集積回路内部に配
線が集中するのを防ぎ、集猜度の高い半導体集積回路装
置を構成することができる。According to the above-described structure, the present invention can prevent wiring from concentrating inside the semiconductor integrated circuit, and can construct a highly integrated semiconductor integrated circuit device.

実施例 本発明の一実施例を第１図を用いて説明する。Example An embodiment of the present invention will be described with reference to FIG.

まず第１図は本発明の一実施例における同心球状の半導
体集積回路装置の構造図である。図中、１１は本発明に
おける半導体集積回路装置の外枠である。１２は半導体
集積回路装置における球形の半導体基板である。１３は
複数の基本セルからなる基本セル球殻を示す。第１図で
本発明における半導体集積回路装置では、基本セルが球
殻状に配列構成されているため、周辺部き、内部の区別
がなく、したがって従来の平面的な半導体基板上で構成
した半導体集積回路装置においてよ（起こる、半導体集
積回路装置内部と周辺部の配線混雑度のアンバランスが
起こらない。また各基本セル間の配線も、各基本セルが
球状に並んでいるため、様々な配線経路が考えられ、未
配線の問題も起こりにくい。First, FIG. 1 is a structural diagram of a concentric spherical semiconductor integrated circuit device according to an embodiment of the present invention. In the figure, 11 is an outer frame of the semiconductor integrated circuit device according to the present invention. 12 is a spherical semiconductor substrate in a semiconductor integrated circuit device. 13 indicates a basic cell spherical shell consisting of a plurality of basic cells. As shown in FIG. 1, in the semiconductor integrated circuit device according to the present invention, the basic cells are arranged in a spherical shell shape, so there is no distinction between the periphery and the inside. There is no imbalance in wiring congestion between the inside and the periphery of a semiconductor integrated circuit device, which occurs in integrated circuit devices.Also, since each basic cell is arranged in a spherical shape, the wiring between each basic cell is different from each other. Routes can be considered, and problems with unwired connections are less likely to occur.

発明の効果 本発明によれば、半導体集積回路装置に配線が集中する
のを防ぎ、集積度の高い半導体集積回路装置を構成する
ことができる。Effects of the Invention According to the present invention, concentration of wiring in a semiconductor integrated circuit device can be prevented, and a highly integrated semiconductor integrated circuit device can be constructed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例における同心球状の半導体集
積回路装置の構造図である。 １１・・・・・・外枠、１２・・・・・・球形の半導体
基板、１３・・・・・・基本セル球殻。FIG. 1 is a structural diagram of a concentric spherical semiconductor integrated circuit device according to an embodiment of the present invention. 11... Outer frame, 12... Spherical semiconductor substrate, 13... Basic cell spherical shell.

Claims (1)

【特許請求の範囲】[Claims] 複数の基本セルからなるセル球殻を同心球状に配列形成
することを特徴とする半導体集積回路装置。A semiconductor integrated circuit device characterized in that cell spherical shells consisting of a plurality of basic cells are arranged in a concentric spherical shape.
JP27343088A 1988-10-28 1988-10-28 Semiconductor integrated circuit device Pending JPH02119241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27343088A JPH02119241A (en) 1988-10-28 1988-10-28 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27343088A JPH02119241A (en) 1988-10-28 1988-10-28 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH02119241A true JPH02119241A (en) 1990-05-07

Family

ID=17527795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27343088A Pending JPH02119241A (en) 1988-10-28 1988-10-28 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH02119241A (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117772A (en) * 1998-07-10 2000-09-12 Ball Semiconductor, Inc. Method and apparatus for blanket aluminum CVD on spherical integrated circuits
WO2000062349A1 (en) * 1999-04-09 2000-10-19 Ball Semiconductor, Inc. Heterostructure spherical shaped semiconductor device
US6179922B1 (en) 1998-07-10 2001-01-30 Ball Semiconductor, Inc. CVD photo resist deposition
US6197610B1 (en) 2000-01-14 2001-03-06 Ball Semiconductor, Inc. Method of making small gaps for small electrical/mechanical devices
US6203623B1 (en) 1999-12-28 2001-03-20 Ball Semiconductor, Inc. Aerosol assisted chemical cleaning method
US6214110B1 (en) 1999-04-23 2001-04-10 Ball Semiconductor, Inc. Apparatus for producing uniform coating thickness on a spherical substrate
US6221165B1 (en) 1998-07-10 2001-04-24 Ball Semiconductor, Inc. High temperature plasma-assisted diffusion
US6235126B1 (en) 1999-02-02 2001-05-22 Ball Semiconductor, Inc. Cleaning system for very small semiconductor spherical-shaped objects
US6240655B1 (en) 1998-07-10 2001-06-05 Ball Semiconductor, Inc. Fluid exchange system and an associated spherical-shaped semiconductor integrated circuit manufacturing system
US6245630B1 (en) * 1996-12-04 2001-06-12 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
US6271145B1 (en) 1999-05-31 2001-08-07 Ball Semiconductor, Inc. Method for making a micromachine
US6300245B1 (en) 1997-12-22 2001-10-09 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
US6303517B1 (en) 1999-07-27 2001-10-16 Ball Semiconductor, Inc. Fast deposition on spherical-shaped integrated circuits in non-contact CVD process
US6331477B1 (en) 2000-01-24 2001-12-18 Ball Semiconductor, Inc. Doping of spherical semiconductors during non-contact processing in the liquid state
US6335268B1 (en) 1998-03-02 2002-01-01 Ball Semiconductor, Inc. Plasma immersion ion processor for fabricating semiconductor integrated circuits
US6335291B1 (en) 1998-07-10 2002-01-01 Ball Semiconductor, Inc. System and method for plasma etch on a spherical shaped device
JP2002001933A (en) * 2000-06-16 2002-01-08 Canon Inc Ink jet recording method, ink jet recording head, and ink jet recorder
US6365493B1 (en) 2000-01-24 2002-04-02 Ball Semiconductor, Inc. Method for antimony and boron doping of spherical semiconductors
US6383287B1 (en) 2000-09-28 2002-05-07 Ball Semiconductor, Inc. System and method for performing diffusion on a three-dimensional substrate
US6426280B2 (en) 2000-01-26 2002-07-30 Ball Semiconductor, Inc. Method for doping spherical semiconductors
US6440253B1 (en) 2000-02-14 2002-08-27 Ball Semiconductor, Inc. Method to facilitate processing of three dimensional substrates
US6444135B1 (en) 2000-01-14 2002-09-03 Ball Semiconductor, Inc. Method to make gas permeable shell for MEMS devices with controlled porosity
US6505409B2 (en) 1999-05-31 2003-01-14 Ball Semiconductor, Inc. Inclinometer

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245630B1 (en) * 1996-12-04 2001-06-12 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
US6300245B1 (en) 1997-12-22 2001-10-09 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
US6335268B1 (en) 1998-03-02 2002-01-01 Ball Semiconductor, Inc. Plasma immersion ion processor for fabricating semiconductor integrated circuits
US6179922B1 (en) 1998-07-10 2001-01-30 Ball Semiconductor, Inc. CVD photo resist deposition
US6335291B1 (en) 1998-07-10 2002-01-01 Ball Semiconductor, Inc. System and method for plasma etch on a spherical shaped device
US6117772A (en) * 1998-07-10 2000-09-12 Ball Semiconductor, Inc. Method and apparatus for blanket aluminum CVD on spherical integrated circuits
US6221165B1 (en) 1998-07-10 2001-04-24 Ball Semiconductor, Inc. High temperature plasma-assisted diffusion
US6240655B1 (en) 1998-07-10 2001-06-05 Ball Semiconductor, Inc. Fluid exchange system and an associated spherical-shaped semiconductor integrated circuit manufacturing system
US6235126B1 (en) 1999-02-02 2001-05-22 Ball Semiconductor, Inc. Cleaning system for very small semiconductor spherical-shaped objects
WO2000062349A1 (en) * 1999-04-09 2000-10-19 Ball Semiconductor, Inc. Heterostructure spherical shaped semiconductor device
US6214110B1 (en) 1999-04-23 2001-04-10 Ball Semiconductor, Inc. Apparatus for producing uniform coating thickness on a spherical substrate
US6271145B1 (en) 1999-05-31 2001-08-07 Ball Semiconductor, Inc. Method for making a micromachine
US6505409B2 (en) 1999-05-31 2003-01-14 Ball Semiconductor, Inc. Inclinometer
US6303517B1 (en) 1999-07-27 2001-10-16 Ball Semiconductor, Inc. Fast deposition on spherical-shaped integrated circuits in non-contact CVD process
US6203623B1 (en) 1999-12-28 2001-03-20 Ball Semiconductor, Inc. Aerosol assisted chemical cleaning method
US6197610B1 (en) 2000-01-14 2001-03-06 Ball Semiconductor, Inc. Method of making small gaps for small electrical/mechanical devices
US6444135B1 (en) 2000-01-14 2002-09-03 Ball Semiconductor, Inc. Method to make gas permeable shell for MEMS devices with controlled porosity
US6331477B1 (en) 2000-01-24 2001-12-18 Ball Semiconductor, Inc. Doping of spherical semiconductors during non-contact processing in the liquid state
US6365493B1 (en) 2000-01-24 2002-04-02 Ball Semiconductor, Inc. Method for antimony and boron doping of spherical semiconductors
US6426280B2 (en) 2000-01-26 2002-07-30 Ball Semiconductor, Inc. Method for doping spherical semiconductors
US6440253B1 (en) 2000-02-14 2002-08-27 Ball Semiconductor, Inc. Method to facilitate processing of three dimensional substrates
JP2002001933A (en) * 2000-06-16 2002-01-08 Canon Inc Ink jet recording method, ink jet recording head, and ink jet recorder
US6383287B1 (en) 2000-09-28 2002-05-07 Ball Semiconductor, Inc. System and method for performing diffusion on a three-dimensional substrate

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