JPH01289016A - Transparent electrically conductive film - Google Patents
Transparent electrically conductive filmInfo
- Publication number
- JPH01289016A JPH01289016A JP11870988A JP11870988A JPH01289016A JP H01289016 A JPH01289016 A JP H01289016A JP 11870988 A JP11870988 A JP 11870988A JP 11870988 A JP11870988 A JP 11870988A JP H01289016 A JPH01289016 A JP H01289016A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- indium
- electrically conductive
- tin oxide
- silver oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910001923 silver oxide Inorganic materials 0.000 claims abstract description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract 4
- 239000010408 film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は透明導電膜に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent conductive film.
従来より液晶表示体、エレクトロルミネッセンス、太陽
電池などの電極材料として透明導電膜が利用されており
、この透明導電膜には金、銀、銅、白金、パラジウム、
アルミニウムなどの金属薄膜と酸化第二スズ、酸化イン
ジウム、酸化亜鉛などの酸化物半導体がある。Transparent conductive films have traditionally been used as electrode materials for liquid crystal displays, electroluminescence, solar cells, etc., and these transparent conductive films include gold, silver, copper, platinum, palladium,
There are metal thin films such as aluminum and oxide semiconductors such as stannic oxide, indium oxide, and zinc oxide.
金属薄膜は低い基板温度で容易に低抵抗の膜を作製する
ことができるが、高い透過率を得るためには膜厚を非常
に薄くしなければならず機械的強度が劣るという欠点を
持っている。一方酸化物半導体は優れな透光性と膜強度
を有しており導電性ら良いことから実用的であり広く応
用されている。Metal thin films can be easily fabricated with low resistance at low substrate temperatures, but in order to obtain high transmittance, the film must be extremely thin, which has the disadvantage of poor mechanical strength. There is. On the other hand, oxide semiconductors have excellent light transmittance, film strength, and good conductivity, so they are practical and widely applied.
〔発明が解決しようとする課題及び目的〕しかしながら
、液晶表示体の高品質化が近年急速に進んでいることに
伴って表示体を大型化、大容呈化した場合現状の透明導
電膜では抵抗が高く表示にむらが出てしまうという課題
が生じている。[Problems and objectives to be solved by the invention] However, as the quality of liquid crystal display bodies has rapidly improved in recent years, when display bodies are made larger and larger in size, the current transparent conductive film has a high resistance. The problem is that the display is uneven due to high values.
そこで本発明の目的とするところは液晶表示体の高品質
化を実現させる低抵抗透明導電膜を堤供することにある
。Therefore, an object of the present invention is to provide a low-resistance transparent conductive film that realizes high quality liquid crystal displays.
本発明の透明導電膜は、酸化銀がドーピングさ均た酸化
インジウム・スズ膜からなることを特徴としている。The transparent conductive film of the present invention is characterized in that it consists of an indium tin oxide film uniformly doped with silver oxide.
真空チャンバー内に酸素とアルゴンを導入し、酸化銀を
象む酸化インジウム・スズのターゲットを用いてＤＣマ
グネトロンスパッタ法により酸化銀がドーピングされた
酸化インジウム・スズ膜を作製した。製膜東件は以下の
通りである。Oxygen and argon were introduced into a vacuum chamber, and an indium tin oxide film doped with silver oxide was produced by DC magnetron sputtering using an indium tin oxide target surrounding silver oxide. The film manufacturing process is as follows.
（１）基板
ガラス基板
（２）到達圧力
５ｘ １０−’Ｔｏ ｒ ｒ
（３）酸素分圧
４Ｘ１０−’Ｔｏｒｒ
（４）スパッタ圧力
５ｘ １０−’Ｔｏ ｒ ｒ
（５）基板温度
１７０℃
（６）ターゲット
Ｉｎ２Ｏ３５ＷＴ％ＳｎＯ，−Ａｇ、０第１図は酸化銀
の量と比抵抗の値の関係を示した図である。この図から
れかるように酸化インジウム・スズに酸化銀をドーピン
グしたものは酸化銀をドーピングしていないものく酸化
銀添加量が０のもの）と比べて抵抗値が低いことがわか
る。(1) Substrate glass substrate (2) Ultimate pressure 5x 10-'Torr (3) Oxygen partial pressure 4X10-'Torr (4) Sputtering pressure 5x 10-'Torr (5) Substrate temperature 170°C (6) Target In2O35WT%SnO,-Ag,0 FIG. 1 is a diagram showing the relationship between the amount of silver oxide and the value of specific resistance. As can be seen from this figure, the resistance value of the indium tin oxide doped with silver oxide is lower than that of the indium tin oxide doped with silver oxide (the amount of silver oxide added is 0).
以上述べたように、本発明の透明導電膜は酸化インジウ
ム・スズに酸化銀かドーピングされているもので非常に
抵抗が低いものであり、デイスプレィデバイスの大型化
・大容量化など高品質化に大きな効果を有するものであ
る。なお本発明の透明導電膜は真空蒸着法、イオンブレ
ーティング法など様々な手法により製膜可能でありその
応用分野も各種表示デバイス、太陽電池、撮像素子など
の透明Ｔｏ ＆や発熱膜、帯電防止膜、熱線反射膜、選
択透過膜など広い分野で応用可能である。As mentioned above, the transparent conductive film of the present invention is made by doping indium tin oxide with silver oxide, and has extremely low resistance. It has a great effect on The transparent conductive film of the present invention can be formed by various methods such as vacuum evaporation method and ion blating method, and its application fields include various display devices, solar cells, image pickup devices, etc., transparent To & heat-generating films, and antistatic films. It can be applied in a wide range of fields, including films, heat ray reflection films, and selective transmission films.
第１図は実施例における酸化銀の添加量と比抵抗の関係
を示した図。
以上
出願人 セイコーエプソン株式会社FIG. 1 is a diagram showing the relationship between the amount of silver oxide added and specific resistance in Examples. Applicant: Seiko Epson Corporation
Claims (1)
膜からなることを特徴とする透明導電膜。(1) A transparent conductive film comprising an indium tin oxide film doped with silver oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11870988A JPH01289016A (en) | 1988-05-16 | 1988-05-16 | Transparent electrically conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11870988A JPH01289016A (en) | 1988-05-16 | 1988-05-16 | Transparent electrically conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01289016A true JPH01289016A (en) | 1989-11-21 |
Family
ID=14743178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11870988A Pending JPH01289016A (en) | 1988-05-16 | 1988-05-16 | Transparent electrically conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01289016A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005314131A (en) * | 2004-04-27 | 2005-11-10 | Sumitomo Metal Mining Co Ltd | Oxide sintered compact, sputtering target, transparent conductive thin film, and their production method |
-
1988
- 1988-05-16 JP JP11870988A patent/JPH01289016A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005314131A (en) * | 2004-04-27 | 2005-11-10 | Sumitomo Metal Mining Co Ltd | Oxide sintered compact, sputtering target, transparent conductive thin film, and their production method |
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