JPH01272755A - Electrically conductive transparent film and production thereof - Google Patents
Electrically conductive transparent film and production thereofInfo
- Publication number
- JPH01272755A JPH01272755A JP9941888A JP9941888A JPH01272755A JP H01272755 A JPH01272755 A JP H01272755A JP 9941888 A JP9941888 A JP 9941888A JP 9941888 A JP9941888 A JP 9941888A JP H01272755 A JPH01272755 A JP H01272755A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tin oxide
- indium tin
- electrically conductive
- conductive transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 14
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は透明導電膜およびその製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent conductive film and a method for manufacturing the same.
従来より液晶表示体、エレクトロルミネッセンス、太陽
電池などの電極材料として透明導電膜が利用されており
、この透明導電膜には金、銀、銅、白金、パラジウム、
アルミニウムなどの金属薄膜と酸化第二スズ、酸化イン
ジウム、酸化亜鉛などの酸化物半導体がある。Transparent conductive films have traditionally been used as electrode materials for liquid crystal displays, electroluminescence, solar cells, etc., and these transparent conductive films include gold, silver, copper, platinum, palladium,
There are metal thin films such as aluminum and oxide semiconductors such as stannic oxide, indium oxide, and zinc oxide.
金属薄膜は低い基板温度で容易に低抵抗の膜を作製する
ことができるが、高い透過率を得るためには膜厚を非常
に薄くしなければならず機械的強度が劣るという欠点を
持っている。一方散化物半導体は優れた透光性と膜強度
を有しており導電性も良いことから実用的であり広く応
用されている。Metal thin films can be easily fabricated with low resistance at low substrate temperatures, but in order to obtain high transmittance, the film must be extremely thin, which has the disadvantage of poor mechanical strength. There is. On the other hand, dispersion semiconductors have excellent light transmittance, film strength, and good conductivity, so they are practical and widely applied.
しかしながら、液晶表示体の高品質化が近年急速に進ん
でいることに伴って表示体を大型化、大容量化した場合
現状の透明導電膜では抵抗が高く表示にむらが出てしま
うという課題が生じている。However, as the quality of liquid crystal displays has progressed rapidly in recent years, the current transparent conductive film has a problem of high resistance and uneven display when the display becomes larger and has a higher capacity. It is occurring.
そこで本発明の目的とするところは液晶表示体の高品質
化を実現させる低抵抗透明導電膜を提供することにある
。Therefore, an object of the present invention is to provide a low-resistance transparent conductive film that can improve the quality of a liquid crystal display.
本発明の透明導電膜は、フッ化スズがドービングされた
酸化インジウム・スズ膜からなることを特徴としている
。また本発明の透明導電膜の製造方法は基板上にフッ化
スズがドーピングされた酸化インジウム・スズ膜をマグ
ネトロンスパッタ法により作製する方法において、酸化
インジウム・スズとフッ化スズを同時にスパッタリング
することにより製膜することを特徴としている。The transparent conductive film of the present invention is characterized by being composed of an indium tin oxide film doped with tin fluoride. In addition, the method for manufacturing a transparent conductive film of the present invention involves simultaneously sputtering indium tin oxide and tin fluoride in a method of manufacturing an indium tin oxide film doped with tin fluoride on a substrate by magnetron sputtering. It is characterized by forming a film.
真空チャンバー内を５Ｘ１０−’Ｔｏｒｒの圧力にして
から酸素を導入し圧力を２ｘｌＯ”Ｔｏｒｒとし、さら
にアルゴンを導入してチャンバー内の圧力を５ｘｌＯ−
”Ｔｏｒｒとした。この雰囲気中で酸化インジウム・ス
ズとフッ化スズをターゲットとしてＲＦスパッタリング
法により同時にスパッタしてフッ化スズがドーピングさ
れた酸化インジウム・スズ膜をガラス基板上に作製した
。この膜の比抵抗は４Ｘ１０−４ΩＣ１であった。After setting the pressure inside the vacuum chamber to 5x10-'Torr, oxygen was introduced to bring the pressure to 2xlO"Torr, and then argon was introduced to bring the pressure inside the chamber to 5xlO"Torr.
In this atmosphere, indium tin oxide and tin fluoride were simultaneously sputtered using RF sputtering as a target to produce an indium tin oxide film doped with tin fluoride on a glass substrate. The specific resistance was 4×10 −4 ΩC1.
実施例と同じ雰囲気中で酸化インジウム・スズをターゲ
ットとしてＲＦスパッタリング法により酸化インジウム
・スズ膜を作製した。この膜の比抵抗は１ 、３ Ｘ
１０−”Ｑｃｍテあった。An indium tin oxide film was produced by RF sputtering using indium tin oxide as a target in the same atmosphere as in the example. The specific resistance of this film is 1,3
There was a 10-"Qcm.
以上述べたように、本発明の透明導電膜は酸化インジウ
ム・スズにフッ化スズがドーピングされているもので非
常に抵抗が低いものであり、デイスプレィデバイスの大
型化・大容量化など高品質化に大きな効果を有するもの
である。また本発明の透明導電膜の製造方法によればフ
ッ化スズの量を任意に変えることができ簡単に低抵抗透
明導電膜を作製することができる。なお本発明の透明導
電膜は真空蒸着法、イオンブレーティング法など様々な
手法により製膜可能でありその応用分野も各種表示デバ
イス、太陽電池、撮像素子などの透明電極や発熱膜、帯
電防止膜、熱線反射膜、選択透過膜など広い分野で応用
可能である。As mentioned above, the transparent conductive film of the present invention is made by doping indium tin oxide with tin fluoride, and has extremely low resistance. This has a great effect on the Further, according to the method for producing a transparent conductive film of the present invention, the amount of tin fluoride can be changed as desired, and a low-resistance transparent conductive film can be easily produced. The transparent conductive film of the present invention can be formed by various methods such as vacuum evaporation method and ion blating method, and its application fields include transparent electrodes, heat-generating films, and antistatic films for various display devices, solar cells, image pickup devices, etc. It can be applied in a wide range of fields such as , heat ray reflective film, selective transmission film, etc.
以 上 出願人 セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation
Claims (2)
スズ膜からなることを特徴とする透明導電膜。(1) Indium oxide doped with tin fluoride
A transparent conductive film characterized by being made of a tin film.
ジウム・スズ膜をマグネトロンスパッタ法により作製す
る方法において、酸化インジウム・スズとフッ化スズを
同時にスパッタリングすることにより製膜を行うことを
特徴とする透明導電膜の製造方法。(2) A method for producing an indium tin oxide film doped with tin fluoride on a substrate by magnetron sputtering, characterized in that the film is formed by simultaneously sputtering indium tin oxide and tin fluoride. A method for producing a transparent conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9941888A JPH01272755A (en) | 1988-04-22 | 1988-04-22 | Electrically conductive transparent film and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9941888A JPH01272755A (en) | 1988-04-22 | 1988-04-22 | Electrically conductive transparent film and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01272755A true JPH01272755A (en) | 1989-10-31 |
Family
ID=14246923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9941888A Pending JPH01272755A (en) | 1988-04-22 | 1988-04-22 | Electrically conductive transparent film and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01272755A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114807856A (en) * | 2022-04-28 | 2022-07-29 | 浙江大学 | Fluorine-doped indium tin oxide transparent conductive film and preparation method thereof |
-
1988
- 1988-04-22 JP JP9941888A patent/JPH01272755A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114807856A (en) * | 2022-04-28 | 2022-07-29 | 浙江大学 | Fluorine-doped indium tin oxide transparent conductive film and preparation method thereof |
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