JPH01204487A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH01204487A JPH01204487A JP2746788A JP2746788A JPH01204487A JP H01204487 A JPH01204487 A JP H01204487A JP 2746788 A JP2746788 A JP 2746788A JP 2746788 A JP2746788 A JP 2746788A JP H01204487 A JPH01204487 A JP H01204487A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser device
- layer
- active layer
- hetero structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005253 cladding Methods 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 abstract description 8
- 125000005842 heteroatom Chemical group 0.000 abstract 4
- 230000009977 dual effect Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体レーザ装置、特に２波長集積型の半扉体
レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device, and particularly to a two-wavelength integrated half-door laser device.
〔従来技術と発明が解決しようとする課題〕光ディスク
などの光情報処理用の光源として、波長０．７８μｍ帯
の短波長半導体レーザ装置および波長０．５８〜０．６
８μｍの可視半導体レーザ装置は、その重要性を増して
いる。[Prior art and problems to be solved by the invention] A short wavelength semiconductor laser device with a wavelength of 0.78 μm and a wavelength of 0.58 to 0.6 are used as a light source for optical information processing of optical discs etc.
8 μm visible semiconductor laser devices are gaining in importance.
光デイスク用光源として、１つのヘッドで信号の記録と
同時に独立に検出可能なデュアル半導体レーザ装置が注
目されている。デュアル半導体レーザ装置の従来例を第
２図に示す。このデュアル半導体レーザ装置は、ｎ型Ｇ
ａＡｓ基板２０１上に、順次、ｎ型Ａ ｌ ｏ、 ４９
Ｇ ａ ｏ、 ｓ＋ Ａ ５層２０２．ｎ型Ａ１、、、
、Ｇａ、０．、Ａｓガイド層２０３．アンドープＡｊｒ
、、、、Ｇａ、、、、Ａｓ層２０４．ｐ型Ａｎ＠、５Ｇ
ａｏ、ｓＡｓ層２０５．ｐ型Ａ １ ｏ、 ｓｓＧ ａ
ｏ、 ｂｚＡ ｓ層２０６゜ｎ型ＧａＡｓｊｇ２Ｑ７
、Ｚｎ拡散領域２０８が順次形成され、その後、２つ
のレーザ装置の間をエツチングで除去し、２つの半導体
レーザの集積された半導体レーザ装置を形成している。As a light source for optical discs, a dual semiconductor laser device that can record signals and simultaneously detect signals independently with one head is attracting attention. A conventional example of a dual semiconductor laser device is shown in FIG. This dual semiconductor laser device is an n-type G
On the aAs substrate 201, n-type A lo, 49
G ao, s+ A 5 layers 202. n-type A1...
, Ga, 0. , As guide layer 203. Undoped Ajr
, , Ga, , As layer 204 . p-type An@, 5G
ao, sAs layer 205. p-type A 1 o, ssG a
o, bzA s layer 206゜n-type GaAsjg2Q7
, Zn diffusion regions 208 are sequentially formed, and then the space between the two laser devices is removed by etching to form a semiconductor laser device in which two semiconductor lasers are integrated.
このように発光部が２つあり、それぞれの駆動を独立に
行える集積型の半導体レーザ装置は、応用物理学会講演
会予講集（２８ｐ −Ｚ Ｈ−６、ｐａｒｔｌｌｌ。An integrated semiconductor laser device that has two light emitting parts and can drive each independently is described in the Japan Society of Applied Physics Preliminary Lectures (28p-Z H-6, partll).
ｐ 、７１４． （１９８７，春））に開示されている
。p, 714. (1987, Spring)).
ところが、２個のレーザの発振波長が同じであるデュア
ル半導体レーザ装置で光ディスクに記録と同時に検出を
行った場合、記録あるいは検出時に雑音を導入しやすく
、光デイスク用ヘッドの高性能化および高信頼化を行う
ことができないという欠点があった。However, when recording on an optical disk and detecting it at the same time using a dual semiconductor laser device in which the two lasers have the same oscillation wavelength, noise is likely to be introduced during recording or detection, making it difficult to improve the performance and reliability of the optical disk head. The disadvantage was that it was not possible to convert.
本発明の目的は、この様な従来の欠点を除去し、光デイ
スク用ヘッドの高性能化、高信頼化を行える半導体レー
ザ装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser device that eliminates such conventional drawbacks and can improve the performance and reliability of an optical disk head.
本発明の半導体レーザ装置は、発振波長が互いに異なる
、第１のダブルヘテロ構造半導体レーザ装置と第２のダ
ブルヘテロ構造半導体レーザ装置とが同一の基板上に形
成されていることを特徴としている。The semiconductor laser device of the present invention is characterized in that a first double heterostructure semiconductor laser device and a second double heterostructure semiconductor laser device, which have different oscillation wavelengths, are formed on the same substrate.
また本発明によれば、
前記基板をＧａＡｓ基板とし、
前記第１のダブルヘテロ構造半導体レーザ装置を、Ｇ
ａ ｏ、５１ ｎ０．５Ｐまたは（Ａ Ｊ ｘＧ ａ
Ｉ−Ｘ）＠、 ５Ｉｎ０．５Ｐ （０＜ｘ＜１）を活性
層とし、（Ａｆｆ。Further, according to the present invention, the substrate is a GaAs substrate, and the first double heterostructure semiconductor laser device is made of GaAs.
a o, 51 n0.5P or (A J xG a
I-X)@, 5In0.5P (0<x<1) is used as the active layer, and (Aff.
Ｇａ＋−ｙ）ｏ、ｓｌ ｎ０．５Ｐ （０≦ｘ＜ｙ≦１
）またはＡｊ２．、、Ｉ ｎ０．５Ｐをクラッド層とし
、前記第２のダブルヘテロ構造半導体レーザ装置を、Ａ
ｌＸ−Ｇａ、−、’Ａｓ （Ｑ＜ｘ’ ＜１）を活性層
とし、Ａｊ２ｙ＋Ｇａ＋−ｙ、Ａｓ （０＜ｘ’＜ｙ
’＜１）または（Ａｊ！、、Ｇａ、−、、）ｏ、５ｌｎ
０．５Ｐ （０＜ｙ″≦１）またはＡｊ’６．５Ｉｎｏ
ｚｓＰをクラッド層とするのが好適である。Ga+-y) o, sl n0.5P (0≦x<y≦1
) or Aj2. ,,In0.5P as a cladding layer, the second double heterostructure semiconductor laser device is made of A
lX-Ga,-,'As (Q<x'<1) is the active layer, Aj2y+Ga+-y, As (0<x'<y
'<1) or (Aj!,,Ga,-,,)o,5ln
0.5P (0<y″≦1) or Aj'6.5Ino
It is preferable to use zsP as the cladding layer.
従来技術と発明が解決しようとする課題の項で述べた様
に、２個のレーザを集積したデュアル半導体レーザ装置
のそれぞれの発振波長が互いに等しい場合、１つのヘッ
ドで光ディスクに記録と検出を同時に独立に行う際に記
録あるいは検出の誤差を生じやすい。これは、例えば第
２図のデュアル半導体レーザ装置では２個の発光部が約
１００μｍ離れているが、２つのレーザ光をヘッド側で
区別できず、記録の為のレーザ光の反射あるいは散乱光
が同一ヘッド内の検出部分に入射し、雑音として導入さ
れる、また、検出のためのレーザ光が同一ヘッド内の記
録部分に入射するためである。As mentioned in the section on the prior art and problems to be solved by the invention, if the oscillation wavelengths of the dual semiconductor laser devices that integrate two lasers are equal to each other, it is possible to simultaneously record and detect on an optical disk using one head. Recording or detection errors are likely to occur when performed independently. For example, in the dual semiconductor laser device shown in Figure 2, the two light emitting parts are separated by about 100 μm, but the two laser beams cannot be distinguished on the head side, and the laser beam for recording is reflected or scattered. This is because the laser light enters the detection section within the same head and is introduced as noise, and the laser light for detection enters the recording section within the same head.
２つのレーザ光をヘッド側で区別するためには、２個の
レーザの発振波長を互いに異なる波長に選択し、ヘッド
に波長を選択するフィルター、すなわち、２つのレーザ
光のうちの目的とする一方の波長のレーザ光のみを通過
させ、他方のレーザ光を通過させない様にすればよいこ
とがわかる。In order to distinguish the two laser beams on the head side, the oscillation wavelengths of the two lasers are selected to be different from each other, and a filter for selecting the wavelength is installed in the head, that is, one of the two laser beams is targeted. It can be seen that it is sufficient to allow only the laser beam with the wavelength of 2 to pass through, and not to allow the other laser beam to pass through.
そこで、同−ｎ型ＧａＡｓ基板上に発振波長の異なる、
Ｇ ａ ｏ、ｓ Ｉ ｎ０．５Ｐまたは（Ａ Ｉｔ 、
Ｇ ａ ｔ−ｘ）ｏ、５Ｉｎ０．５Ｐ（０＜ｘ＜１）を
活性層とする半導体レーザと、Ａｌｘ−Ｇａ、−ｘ’Ａ
ｓ （０＜ｘ’ ＜１）を活性層とする半導体レーザを
集積することにより、従来のデュアルの半導体レーザ装
置の機能を全く損うことなく、ヘッドに搭載したときの
高性能化および高信頼化を行うことができる。Therefore, on the same n-type GaAs substrate,
G a o, s I n0.5P or (A It ,
A semiconductor laser having an active layer of Ga t-x)o, 5In0.5P (0<x<1) and Alx-Ga, -x'A
By integrating a semiconductor laser with s (0 <x'< 1) as its active layer, it achieves higher performance and reliability when mounted on a head without compromising the functionality of conventional dual semiconductor laser devices. can be converted into
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
第１図は、ｎ型ＧａＡｓ基板上に、１つのレーザの活性
層にアンドープＱａｏ、５１ ｎ０．５Ｐ層を、もう１
つのレーザの活性層にアンドープＡｌ１ｏ、ｏｑｃａｏ
、９＋ＡＳを用いた２波長、デュアルの半導体レーザ装
置に本発明を適用した実施例を示す。Figure 1 shows an undoped Qao, 51n0.5P layer as the active layer of one laser, and another layer of n0.5P on an n-type GaAs substrate.
Undoped Al1o, oqcao in the active layer of two lasers
An embodiment in which the present invention is applied to a dual wavelength, dual semiconductor laser device using , 9+AS will be described.
この半導体レーザ装置の構造を、その製造方法に基づい
て説明する。The structure of this semiconductor laser device will be explained based on its manufacturing method.
まずＭＯＶＰＥ法により、ｎ型ＧａＡｓ基板１０１上に
、ＳｅドープＧａＡｓバッファ層１０２を１μｍ、Ｓｅ
ドープＣＡｌｏ、ａＧａｏ、ｂ）ｏ、ｓｌ ｎ０．５Ｐ
クラッド層１０３を１ｐｍＳＧａｏ、ｓＩ ｎ０．５Ｐ
活性層１０４を１μｍ、Ｚｎドープ（Ａ １ ｏ、ａＧ
ａ ｏ、ｈ）ｏ、５Ｉｎ０．ｓＰ層１０５をｌｃｒｍ
成長し、第１の半導体レーザのためのダブルヘテロ構造
を形成した後、第２の半導体レーザを形成するため、ダ
ブルヘテ口構造をストライプ状に化学エツチングして除
去する。First, by MOVPE method, a Se-doped GaAs buffer layer 102 with a thickness of 1 μm and Se
Doped CAlo, aGao, b) o, sl n0.5P
The cladding layer 103 is 1pmSGao, sI n0.5P
The active layer 104 is 1 μm thick and Zn-doped (A 1 o, aG
a o, h) o, 5In0. lcrm the sp layer 105
After growing and forming the double heterostructure for the first semiconductor laser, the double heterostructure is chemically etched away in stripes to form the second semiconductor laser.
その後、第２の半導体レーザのためのダブルヘテロ構造
を、ＳｅドープＡ ｊ！ ｏ、 ｓＧ ａ ６．５Ａ
Ｓクラッド層１０９を１μｍ、アンドープＡ ｊ２ ｏ
、 ｏｑＧ ａ ｏ、 ｑＩＡｓ活性１１１０を０．１
／’ ｍｓ Ｚ ｎドープＡｌ！Ｏ，５Ｇａｏ、ｓＡｓ
クラッド層１１１を１μｍ順次成長する。Then, the double heterostructure for the second semiconductor laser is Se-doped A j! o, sGa 6.5A
The S cladding layer 109 is 1 μm thick and undoped A j2 o
, oqGa o, qIAs activity 1110 to 0.1
/' ms Z n-doped Al! O,5Gao,sAs
A cladding layer 111 is sequentially grown to a thickness of 1 μm.
この時、選択成長を行い第１の半導体レーザ用のダブル
ヘテロ構造上には結晶成長を行わない。At this time, selective growth is performed and no crystal growth is performed on the double heterostructure for the first semiconductor laser.
その後、ＺｎドープＧａＡｓ層１０８．ＳｅドープＧａ
Ａｓ層１０７を電流を狭さくできる様に、２個の発光部
を約１００μｍ離して形成し、ｐ電極１１２を２個のレ
ーザに独立に設け、ｎ電極１１３を形成する。Thereafter, a Zn-doped GaAs layer 108. Se-doped Ga
In order to narrow the current, the As layer 107 is formed so that the two light emitting parts are separated by about 100 μm, the p electrodes 112 are provided independently in the two lasers, and the n electrodes 113 are formed.
本実施例により、同一基板上に発振波長０．７８μｍお
よび０．６８μｍのそれぞれの波長を有する２波長のデ
ュアルの半導体レーザ装置ができる。According to this embodiment, a dual semiconductor laser device having two wavelengths having oscillation wavelengths of 0.78 μm and 0.68 μm can be fabricated on the same substrate.
以上、本発明の一実施例を説明したが、本発明はこの実
施例の組成に限られるものではなく、他の組成も適用で
きることはもちろんである。Although one embodiment of the present invention has been described above, the present invention is not limited to the composition of this embodiment, and it goes without saying that other compositions can also be applied.
以上述べた様に、本発明によれば従来ある通常のデュア
ルの半導体レーザの機能を全（損わず、２つのレーザの
発振波長を変えることができる。As described above, according to the present invention, the oscillation wavelengths of two lasers can be changed without impairing all the functions of conventional dual semiconductor lasers.
それにより、同一ヘッド上への同時の記録と検出に対す
る性能を高め、高信顛化させることができる。Thereby, performance for simultaneous recording and detection on the same head can be improved and reliability can be improved.
第１図は本発明の一実施例である半導体レーザ装置の断
面図、
第２図は従来側の半導体レーザ装置の断面図である。
１０１．２０１ ・ｎ−Ｇ ａ Ａ ｓ基板１０２
・・・ｎ−ＧａＡｓバッファ層１０３ ・・・ｎ
（Ａｊ！ｏ１Ｇａｏ、６）ｏ、ｓＩ ｎ０．５Ｐクラッ
ド層
１０４ ・・・Ｇａｏ、ｓ Ｉ ｎｏ、ｓ Ｐ活性
層１０５ ・” ｐ（ＡＩｏ、４Ｇ３０．６）０．５
１ ｎ０．５Ｐクラッド層
１０７・・・ｎ−ＧａＡｓ層
１０８ ・・・ｐ−ＧａＡｓ層
１０９ ・・・ｎ Ａｌｏ、ｓ Ｇａｏ、５ Ａｓク
ラッド層
１１０ ・・・ｎ Ａｊ２ｏ、ｏｗＧａｏ、ｇｌＡ
Ｓ活性層１１１ ・ ・ ・ ｐ ＡＩ！ｏ、ｓ
Ｇａｏ、ｓ ＡｓＪ！１１２ ・・・ｐ電極
１１３ ・・・ｎ電極
２０２ ・・・ｎ Ａｌｏ、ｎｏＧａｏ、３１Ａ３層
２０３ ・・・ｎ−Ａ ｌｏ、、ｌｓＧ ａｏ、６３Ａ
３層２０４ ・−・アンドープＡｊ！ｏ、ｏ９Ｇａｏ
、＋ｎＡＳ層
２０５ ・・・ｐＡｎ！ｏ、５Ｇａｏ、ｓＡｓ層２０６
・・・ｐ Ａｊ！ｏ、５ｅＧａｏ、６２Ａｓ層２０
７− ・・ｎ−ＧａＡｓ層
２０８ ・・・Ｚｎ拡散領域
代理人 弁理士 岩 佐 義 幸FIG. 1 is a sectional view of a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor laser device. 101.201 ・n-GaAs substrate 102
... n-GaAs buffer layer 103 ... n
(Aj!o1Gao, 6) o, sI n0.5P cladding layer 104 ... Gao, sI no, s P active layer 105 ・'' p(AIo, 4G30.6) 0.5
1 n0.5P cladding layer 107...n-GaAs layer 108...p-GaAs layer 109...n Alo, s Gao, 5 As cladding layer 110...n Aj2o, owGao, glA
S active layer 111 ・ ・ ・ p AI! o,s
Gao,s AsJ! 112...p electrode 113...n electrode 202...n Alo, noGao, 31A3 layer 203...n-A lo,, lsG ao, 63A
3rd layer 204 --- Undoped Aj! o, o9Gao
, +nAS layer 205...pAn! o, 5 Gao, sAs layer 206
... p Aj! o, 5eGao, 62As layer 20
7-...n-GaAs layer 208...Zn diffusion region agent Patent attorney Yoshiyuki Iwasa
Claims (2)
造半導体レーザ装置と第２のダブルヘテロ構造半導体レ
ーザ装置とが同一の基板上に形成されていることを特徴
とする２波長集積型の半導体レーザ装置。(1) A dual-wavelength integrated semiconductor, characterized in that a first double-hetero structure semiconductor laser device and a second double-hetero structure semiconductor laser device, which have different oscillation wavelengths, are formed on the same substrate. laser equipment.
＿０＿．＿５Ｉｎ＿０＿．＿５Ｐまたは（Ａｌ＿ｘＧａ
＿１＿−＿ｘ）＿０＿．＿５Ｉｎ＿０＿．＿５Ｐ（０＜
ｘ＜１）を活性層とし、（Ａｌ＿ｙＧａ＿１＿−＿ｙ）
＿０＿．＿５Ｉｎ＿０＿．＿５Ｐ（０≦ｘ＜ｙ≦１）ま
たはＡｌ＿０＿．＿５Ｉｎ＿０＿．＿５Ｐをクラッド層
とし、前記第２のダブルヘテロ構造半導体レーザ装置を
、Ａｌ＿ｘ’Ｇａ＿１＿−＿ｘ’Ａｓ（０＜ｘ’＜１）
を活性層とし、Ａｌ＿ｙ’Ｇａ＿１＿−＿ｙ’Ａｓ（０
＜ｘ’＜ｙ’＜１）または（Ａｌ＿ｙ”Ｇａ＿１＿−＿
ｙ”）＿０＿．＿５Ｉｎ＿０＿．＿５Ｐ（０＜ｙ”≦１
）またはＡｌ＿０＿．＿５Ｉｎ＿０＿．＿５Ｐをクラッ
ド層とすることを特徴とする請求項１記載の２波長集積
型の半導体レーザ装置。(2) The substrate is a GaAs substrate, and the first double heterostructure semiconductor laser device is made of GaAs.
＿0＿． _5In_0_. _5P or (Al_xGa
_1_-_x)_0_. _5In_0_. _5P(0<
x<1) as the active layer, (Al_yGa_1_-_y)
＿0＿． _5In_0_. _5P (0≦x<y≦1) or Al_0_. _5In_0_. _5P is used as a cladding layer, and the second double heterostructure semiconductor laser device is made of Al_x'Ga_1_-_x'As (0<x'<1)
is the active layer, Al_y'Ga_1_-_y'As(0
<x'<y'<1) or (Al_y"Ga_1_-_
y”)_0_._5In_0_._5P(0<y”≦1
) or Al_0_. _5In_0_. 2. The two-wavelength integrated semiconductor laser device according to claim 1, wherein the cladding layer is made of _5P.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2746788A JPH01204487A (en) | 1988-02-10 | 1988-02-10 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2746788A JPH01204487A (en) | 1988-02-10 | 1988-02-10 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01204487A true JPH01204487A (en) | 1989-08-17 |
Family
ID=12221919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2746788A Pending JPH01204487A (en) | 1988-02-10 | 1988-02-10 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01204487A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0410689A (en) * | 1990-04-27 | 1992-01-14 | Nec Corp | Semiconductor laser |
| JP2000196203A (en) * | 1998-12-25 | 2000-07-14 | Sharp Corp | Semiconductor laser and its manufacture |
| JP2001352129A (en) * | 2000-02-18 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacturing method |
| JP2002094168A (en) * | 2000-09-19 | 2002-03-29 | Toshiba Corp | Semiconductor laser device and its manufacturing method |
| US6618420B1 (en) | 1999-08-18 | 2003-09-09 | Kabushiki Kaisha Toshiba | Monolithic multi-wavelength semiconductor laser unit |
| JP2004328011A (en) * | 1998-12-22 | 2004-11-18 | Sony Corp | Manufacturing method of semiconductor light emitting device |
| US6919217B2 (en) | 2002-04-15 | 2005-07-19 | Sharp Kabushiki Kaisha | Semiconductor laser device fabricating method |
| US6967119B2 (en) | 2002-10-31 | 2005-11-22 | Sharp Kabushiki Kaisha | Semiconductor laser device and method of fabricating the same |
| US7034341B2 (en) | 2002-04-15 | 2006-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device having a multi-layer buffer layer |
| US7274721B2 (en) | 2003-09-30 | 2007-09-25 | Sharp Kabushiki Kaisha | Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same |
-
1988
- 1988-02-10 JP JP2746788A patent/JPH01204487A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0410689A (en) * | 1990-04-27 | 1992-01-14 | Nec Corp | Semiconductor laser |
| JP2004328011A (en) * | 1998-12-22 | 2004-11-18 | Sony Corp | Manufacturing method of semiconductor light emitting device |
| JP2000196203A (en) * | 1998-12-25 | 2000-07-14 | Sharp Corp | Semiconductor laser and its manufacture |
| US6618420B1 (en) | 1999-08-18 | 2003-09-09 | Kabushiki Kaisha Toshiba | Monolithic multi-wavelength semiconductor laser unit |
| JP2001352129A (en) * | 2000-02-18 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacturing method |
| JP2002094168A (en) * | 2000-09-19 | 2002-03-29 | Toshiba Corp | Semiconductor laser device and its manufacturing method |
| US6919217B2 (en) | 2002-04-15 | 2005-07-19 | Sharp Kabushiki Kaisha | Semiconductor laser device fabricating method |
| US7034341B2 (en) | 2002-04-15 | 2006-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device having a multi-layer buffer layer |
| US6967119B2 (en) | 2002-10-31 | 2005-11-22 | Sharp Kabushiki Kaisha | Semiconductor laser device and method of fabricating the same |
| US7274721B2 (en) | 2003-09-30 | 2007-09-25 | Sharp Kabushiki Kaisha | Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same |
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