JPH01262686A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01262686A JPH01262686A JP9193888A JP9193888A JPH01262686A JP H01262686 A JPH01262686 A JP H01262686A JP 9193888 A JP9193888 A JP 9193888A JP 9193888 A JP9193888 A JP 9193888A JP H01262686 A JPH01262686 A JP H01262686A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- doped
- face
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000010355 oscillation Effects 0.000 claims abstract description 13
- 238000005253 cladding Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体レーザ装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor laser device.
（従来の技術）
光ディスクなどの光情報処理用の光源として波長０．７
８１ｚｍ帯の短波長半導体レーザ装置および波長０．５
８〜０．６８１Ｊｎの可視半導体レーザ装置はその重要
性を増している。(Prior art) As a light source for optical information processing such as optical discs, a wavelength of 0.7 is used.
81zm band short wavelength semiconductor laser device and wavelength 0.5
8-0.681 Jn visible semiconductor laser devices are gaining in importance.
光デイスク用光源として、１つのヘッドで光ディスクに
記録した信号を、記録と同時に独立に検出できるデュア
ル半導体レーザ装置が注目されている。従来例を第２図
に示す、ｎ型ＧａＡｓ基板２０１上に順次ｎ型Ａρ０．
４１Ｇ ａ ０．５１Ａ ５層２０２、ｎ型ＡρＯ，）
ＳＧ ａ ｏ６ｓＡ ｓガイド層２０３、アンドープＡ
ρ０．０９Ｇ ａ ０．９１Ａ ５層２０４ 、 Ｐ型
Ａρ。。As a light source for optical discs, a dual semiconductor laser device that can independently detect signals recorded on an optical disc using a single head at the same time as recording is attracting attention. A conventional example is shown in FIG. 2, in which n-type Aρ0.
41G a 0.51A 5 layers 202, n-type AρO,)
SG a o6sA s guide layer 203, undoped A
ρ0.09G a 0.91A 5 layers 204, P type Aρ. .
Ｇ ａ ｏ、 ｓ Ａ ｓ層２０５ 、ｐ型Ａρａ、
ｓ＊Ｇ ａ ０．６２Ａ ５層２０６ 、ｎ型ＧａＡｓ
層２０７ 、Ｚ ｎ拡散領域２０８が順次形成されてい
る。その後、２つのレーザ装置の間をエツチングで除去
し、２つの半導体レーザの集積された半導体レーザ装置
を形成している。Gao, sAs layer 205, p-type Aρa,
s*Ga 0.62A 5 layers 206, n-type GaAs
A layer 207 and a Zn diffusion region 208 are sequentially formed. Thereafter, the space between the two laser devices is removed by etching to form a semiconductor laser device in which two semiconductor lasers are integrated.
この従来例の様に発光部が２つあり、それぞれの駆動を
独立に行なえる、集積型の半導体レーザ装置ができる。As in this conventional example, an integrated semiconductor laser device can be obtained which has two light emitting sections and can drive each of them independently.
（応用物理学会講演会予稿集２８ｐ−２ｔｌ−６ｐａｒ
ｔｌｌ［Ｌ７１４． （１９８７，春））。(Proceedings of the Society of Applied Physics Conference 28p-2tl-6par
tll[L714. (1987, Spring)).
（発明が解決しようとする課題）
ところが、２個のレーザの発振波長が同じであるレーザ
装置で光ディスクに記録すると同時にその光ディスクか
ら検出を行なった場合、記録あるいは検出時に雑音を導
入しやすく、光デイスク用ヘッドの高性能化および高信
頼化を行なうことかできなかった。(Problem to be solved by the invention) However, when recording on an optical disk and simultaneously detecting from the optical disk using a laser device in which two lasers have the same oscillation wavelength, noise is likely to be introduced during recording or detection, and the optical It was not possible to improve the performance and reliability of the disk head.
従来技術は以上に説明した様な欠点を有している。そこ
で、本発明の目的は、この様な従来の欠点を除去し、光
デイスク用ヘッドの高性能化、高信頼化を行なえる半導
体レーザ装置を提供することにある。The prior art has the drawbacks described above. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor laser device which can eliminate such conventional drawbacks and improve the performance and reliability of an optical disk head.
（課題を解決するための手段）
前述の課題を解決するために本発明が提供する手段は、
（００１）面に等価な第１の面および（１１１）Ａｓ面
または＜１１０）面に等価な第２の面が形成されている
段差のあるＧａＡｓ基板と、Ｇａｏ、ｓ Ｉ ｎｏ、
Ｐまたは（ＡρえＧａ＋−ｘ ） ｏ、Ｉ ｎｏ、ｓ
Ｐ （０＜ｘ＜１． ）を活性層とし、（Ａρｙ Ｇ
ａ ｌ−Ｆ ） （１，５Ｉ ｎ １１．５ Ｐ（Ｏ≦
ｘ＜ｙ≦１）またはＡρｏ、ｓ Ｉ ｎｏ、ｓ Ｐをク
ラッド層とするダブルヘテロ構造とを有し、該ダブルヘ
テロ構造は前記ＧａＡｓ基板上に形成されており、前記
第１の面上の前記ダブルヘテロ構造におけるレーザ発振
の波長と前記第２の面上の前記ダブルヘテロ構造におけ
るレーザ発振の波長とが互いに異なることを特徴とする
２波長集積型半導体レーザ装置である。(Means for Solving the Problems) Means provided by the present invention to solve the above-mentioned problems are as follows:
Gao, s I no, Gao, s I no,
P or (AρeGa+-x) o, I no, s
P (0<x<1.) is the active layer, (Aρy G
a l−F ) (1,5I n 11.5 P(O≦
x<y≦1) or Aρo, sIno, sP as a cladding layer, the double heterostructure is formed on the GaAs substrate, and the double heterostructure is formed on the GaAs substrate, and A two-wavelength integrated semiconductor laser device characterized in that the wavelength of laser oscillation in the double heterostructure and the wavelength of laser oscillation in the double heterostructure on the second surface are different from each other.
（作用） 本発明の作用を以下に説明する。(effect) The operation of the present invention will be explained below.
前に（発明が解決しようとする課題）の項で述べた様に
２個のレーザを集積した半導体レーザ（以下デュアルの
半導体レーザと記す）のそれぞれの発振波長が互いに等
しい場合、１つのヘッドで光ディスクに記録と検出とを
同時に独立に行なう際に記録あるいは検出にａ差を生じ
やすい。As mentioned in the previous section (Problems to be Solved by the Invention), if the oscillation wavelengths of two integrated semiconductor lasers (hereinafter referred to as dual semiconductor lasers) are equal to each other, one head can When recording and detecting on an optical disc are performed simultaneously and independently, a difference in a is likely to occur in recording or detection.
この誤りは、例えば第２図では２個の発光部が約１００
１ＪＩＩ離れているが、２個のレーザ光をヘッド側で区
別できず、記録の為のレーザ光の反射あるいは散乱光が
同一ヘッド内の検出部分に入射し、雑音として導入され
、また、検出のためのレーザ光が同一ヘッド内の記録部
分に入射することに起因している。２個のレーザ光をヘ
ッド側で区別するためには、２個のレーザの発振波長を
互いに異なる波長に選択し、ヘッドに波長を選択するフ
ィルター、すなわち、２個のうちの目的とする一方の波
長のレーザ光だけを通過させ、他方のレーザ光を通過さ
せない様にすればよいことがわかる。This error is caused by, for example, the two light emitting parts in FIG.
Although the two laser beams are separated by 1 JII, the two laser beams cannot be distinguished on the head side, and the reflected or scattered light of the laser beam for recording enters the detection part in the same head and is introduced as noise. This is due to the fact that the laser beam for recording is incident on the recording portion within the same head. In order to distinguish between the two laser beams on the head side, the oscillation wavelengths of the two lasers are selected to be different from each other, and a filter for selecting the wavelength is installed in the head, that is, one of the two laser beams is used. It can be seen that it is sufficient to allow only the laser beam of one wavelength to pass through, and not to allow the other laser beam to pass through.
ところで、有機金属気相成長法（ＭＯＶＰＥ）で成長し
た、Ｇ ａ Ａ ｓ基板に格子整合するＧａｏ、ｓ Ｉ
ｎａ、ｓ Ｐあるいは（Ａρｘ・Ｇ ａ ＋−ｘ・）
ｏ、 ｑＩ ｎｏ、ｓ Ｐ （０＜ｘ’ ＜１ ）の
バンドギャップエネルギー（Ｅｇ）は、＜００１ ）Ｇ
ａＡｓ基板上に成長した場合組成一定のもとで、成長時
の温度およびＶ／Ｉ比およびドーピングによって１．８
５ｅＶから１．９１ｅＶまで約６０ｍ ｅ Ｖ変化する
。By the way, Gao,sI, which is lattice matched to a GaAs substrate and grown by metal organic vapor phase epitaxy (MOVPE),
na, s P or (Aρx・G a +−x・)
The bandgap energy (Eg) of o, qI no, s P (0<x'<1) is <001)G
1.8 when grown on an aAs substrate, depending on the growth temperature, V/I ratio, and doping under a constant composition.
It changes by about 60m eV from 5eV to 1.91eV.
ところが、（１１１）Ａｓ面あるいは＜１１０＞面上に
成長した場合、上記Ｇａｏ５Ｉ ｎｏ、ｓ Ｐあるいは
（ＡＮ ｘＧａ＋−ｘ・） ０．５ Ｉ ｎｏ、ｓ Ｐ
（０＜ｘ’ ＜１）のＥｇは成長時の温度、Ｖ／Ｉ［比
、ドーピングによらず常に１．９１ｅ Ｖとなる。However, when grown on the (111) As plane or <110> plane, the above Gao5I no, s P or (AN xGa+-x・) 0.5 I no, s P
Eg (0<x'<1) is always 1.91 e V regardless of the growth temperature, V/I [ratio, or doping.
このＥｇの違いは結晶中の■族副格子上の配列の違いに
よって生じ、レーザの発振波長と直接関係する。This difference in Eg is caused by a difference in the arrangement on the group II sublattice in the crystal, and is directly related to the oscillation wavelength of the laser.
そこで、第１図（後に詳しく説明する本発明の一実施例
の断面図）に示す様に、同−ＧａＡｓ基板１０１上に、
Ｇａｏ、ｓ Ｉ ｎｏ、ｓ Ｐｔたは（Ａρ工Ｇａ＋−
ｘ ） ｏ、ｓ Ｉ ｎｏ、ｓ Ｐ （０＜ｘ＜ １
）を活性層とし、（００１）面にＭＯＶＰＥ成長する。Therefore, as shown in FIG. 1 (a cross-sectional view of an embodiment of the present invention to be described in detail later), on the GaAs substrate 101,
Gao, s I no, s Pt or (Aρ Engineering Ga+-
x ) o, s I no, s P (0<x<1
) is used as an active layer and grown on the (001) plane by MOVPE.
活性層のＥｇが（１１０）面に成長する場合よりも小さ
い様に、成長時の温度およびＶ１ｍ比を泗んで成長した
（００１）基板上の半導体レーザと、（１，１１） Ａ
ｓ面あるいは（１１０）面基板上の半導体レーザとを
集積することにより、従来のデュアルの半導体レーザの
機能を全く損うことなく、ヘッド搭載時の高性能化およ
び高信顆化を行なうことができる。A semiconductor laser on a (001) substrate grown by adjusting the growth temperature and V1m ratio so that the Eg of the active layer is smaller than that when grown on a (110) plane, and a (1,11) A semiconductor laser.
By integrating a semiconductor laser on an s-plane or (110)-plane substrate, it is possible to achieve higher performance and higher reliability when mounted on a head without compromising the functionality of conventional dual semiconductor lasers. can.
（実施例） 第１図は本発明の一実施例を示す断面図である。(Example) FIG. 1 is a sectional view showing an embodiment of the present invention.
本図の実施例はｎ型ＧａＡｓ基板１０１上に、活性層に
アンドープＧａｏ、ｓ Ｉ ｎｏ、ｓ Ｐ層１０４を用
い、（００１）面上に成長した活性層１０４および（１
１１）Ａｓ面上に成長した活性層１１０をそれぞれの半
導体レーザ構造にもつ、２波長集積型の半導体レーザ装
置である。The embodiment shown in this figure uses an undoped Gao, s I no, s P layer 104 as an active layer on an n-type GaAs substrate 101, and has an active layer 104 grown on a (001) plane and a (1
11) This is a two-wavelength integrated semiconductor laser device in which each semiconductor laser structure has an active layer 110 grown on an As surface.
（００１）面および（１１１）Ａｓ面を成長面にもつ段
差のあるＧａＡｓ基板１０１を形成し、ＭＯＶＰＢ法に
より、ｎ型ＧａＡｓ基板１０１上に、ＳｅドープＧａＡ
ｓバッファ層１０２（厚さ１−）、Ｓｅドーグ（Ａｇ３
．４ Ｇａｏ、ｓ ） ｏ、ｓ Ｉ ｎｏ、ｓ Ｐク
ラッド層１０３（厚さｌ μｍ） 、Ｇａｏ、ｓ Ｉ
ｎａ、ｓＰ活性層１０４．１１０ （各層の厚さ０．１
四）、Ｚｎドープ（Ａｇ３．４ Ｇａｏ、＊ ） ｏ、
ｓ Ｉ ｎｏ、ｓ Ｐ層１０５（厚さＩＬＩＩ＋）、
ｚｎドープＧａＡｓ層１０６、ＳｅドープＧａＡｓ電流
ブロック層１０７を順次に成長し、電流注入領域を形成
し、さらにＺｎドープＧａＡｓｐ側オーミックコンタク
ト層１０８層を成長する。その後、２つの半導体レーザ
間を、エツチングによりｎＧａＡｓ基板１０１まで除去
することにより分離し、Ｐｕｓ極１０９を２個のレーザ
構造に独立に設け、ｎ電極１１０を形成する。２個のレ
ーザ構造は互いの発光部を約１１００ｕ離して形成する
。また、活性層成長時の温度を７００°Ｃ１Ｖ／ＩＩＩ
比を４００に設定した。このようにして製作した本実施
例は、同一基板上に発振波長０．６８ｕ＋ｎの半導体レ
ーザ′ｖ４造および発振波長０．６５四の半導体レーザ
構造を有する２波長集積型の半導体レーザ装置である。A stepped GaAs substrate 101 with (001) plane and (111) As plane as growth planes is formed, and Se-doped GaAs is grown on the n-type GaAs substrate 101 by the MOVPB method.
s buffer layer 102 (thickness 1-), Se dog (Ag3
．． 4 Gao, s ) o, s I no, s P cladding layer 103 (thickness l μm), Gao, s I
na, sP active layer 104.110 (thickness of each layer 0.1
4), Zn doped (Ag3.4 Gao, *) o,
s I no, s P layer 105 (thickness ILII+),
A Zn-doped GaAs layer 106 and a Se-doped GaAs current blocking layer 107 are sequentially grown to form a current injection region, and then a Zn-doped GaAsp side ohmic contact layer 108 is grown. Thereafter, the two semiconductor lasers are separated by etching to remove down to the nGaAs substrate 101, and the PuS poles 109 are provided independently in the two laser structures to form the n-electrode 110. The two laser structures are formed with their light emitting parts separated by about 1100 u. In addition, the temperature during active layer growth was set to 700°C1V/III.
The ratio was set to 400. The present embodiment manufactured in this manner is a two-wavelength integrated semiconductor laser device having a semiconductor laser structure with an oscillation wavelength of 0.68u+n and a semiconductor laser structure with an oscillation wavelength of 0.654 on the same substrate.
本発明は（１１１）Ａｓ面ＧａＡｓ上成長のかわりに（
１１０）面ＧａＡｓ上成長を行なった場合にも適用でき
る。また、他の組成にも適用できる。In the present invention, instead of growing on (111) As-plane GaAs, (
110) It can also be applied to the case where growth is performed on plane GaAs. It is also applicable to other compositions.
（発明の効果）
以上に述べた様に、本発明によれば従来ある通常のデュ
アルの半導体レーザの機能を全く損わず、２個のレーザ
の発振波長をかえることができる。(Effects of the Invention) As described above, according to the present invention, the oscillation wavelengths of two lasers can be changed without impairing the functions of conventional dual semiconductor lasers.
そこで、本発明の半導体レーザ装置を光デイスク装置の
ヘッドに利用すれば、そのヘッドにより同時に行う記録
および検出の性能を高め、信頼性を向上できる。Therefore, if the semiconductor laser device of the present invention is used in the head of an optical disk device, the performance of simultaneous recording and detection performed by the head can be improved, and the reliability can be improved.
第１図は本発明の一実施例の断面図、第２図は従来の半
導体レーザ装置の断面図である。
１０１ 、２０１ ・・・ｎ−ＧａＡｓ基板、１０２−
ｎ −ＧａＡｓバッファ層、１０３ ・・・ｎ （Ａ
’） ０．４ＧＦＬｏ、ｂ ） ｏ、ｓ Ｉ ｎｏ、
ｓ Ｐクラッド層、１０４゜１１０ ・”Ｇａｏ、ｓ
Ｉ ｎｏ、ｓ Ｐ活性層、１０５−ｐ −（Ａｊ！ ０
．４ Ｇａｏ、ｓ ） ｏ、ｓ Ｉ ｎｏ、ｓ Ｐクラ
ッド層、１０６−ｐ−ＧａＡｓ層、１０７−ｎ−ＧａＡ
ｓ層、１０８＝−ｐ−ＧａＡｓ層、１０９・・・ｐ側電
極、１１０−・・ｎｌＦ！ｌ電極、２０２ ・＝ ｎ
Ａ Ａ Ｇ、 ４１Ｇ ａ ｏ、 ｓｅＡ Ｓガイド
層、２０３−ｎ −Ａρｏ、 ｓｓＧ ａ ｏ、 ａｓ
Ａ Ｓ層、２０４− Ａ ｊ！ ｏ、 ｏ＊Ｇ ａ ｏ
、 ＊＋Ａ ｓ活性層、２０５ ・Ｐ −Ａρｏ、 ｓ
Ｇ ａ ｏ、 ｓ Ａ Ｓ層、２０６ ・ｐ−Ａρａ
、 ｓ。
Ｇ ａ ０．６２Ａ Ｓ層、２０７−ｎ−ＧａＡｓ層、
２０８−・・Ｚｎ拡散領域。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor laser device. 101, 201...n-GaAs substrate, 102-
n-GaAs buffer layer, 103...n (A
') 0.4GFLo, b) o, s I no,
s P cladding layer, 104°110 ・”Gao, s
I no, s P active layer, 105-p -(Aj! 0
．． 4 Gao, s) o, s I no, s P cladding layer, 106-p-GaAs layer, 107-n-GaA
s layer, 108=-p-GaAs layer, 109... p-side electrode, 110-... nlF! l electrode, 202 ・= n
AAG, 41G ao, seA S guide layer, 203-n -Aρo, ssG ao, as
A S layer, 204- A j! o, o*G a o
, *+A s active layer, 205 ・P −Aρo, s
G ao, s A S layer, 206 ・p-Aρa
, s. Ga 0.62A S layer, 207-n-GaAs layer,
208--Zn diffusion region.
Claims (1)
または（１１０）面に等価な第２の面が形成されている
段差のあるＧａＡｓ基板と、Ｇａ＿０＿．＿５Ｉｎ＿０
＿．＿５Ｐまたは（Ａｌ＿ｘＧａ＿１＿−＿ｘ）＿０＿
．＿５Ｉｎ＿０＿．＿５Ｐ（０＜ｘ＜１）を活性層とし
、（Ａｌ＿ｙＧａ＿１＿−＿ｙ）＿０＿．＿５Ｉｎ＿０
＿．＿５Ｐ（０≦ｘ＜ｙ≦１）またはＡｌ＿０＿．＿５
Ｉｎ＿０＿．＿５Ｐをクラッド層とするダブルヘテロ構
造とを有し、該ダブルヘテロ構造は前記ＧａＡｓ基板上
に形成されており、前記第１の面上の前記ダブルヘテロ
構造におけるレーザ発振の波長と前記第２の面上の前記
ダブルヘテロ構造におけるレーザ発振の波長とが互いに
異なることを特徴とする２波長集積型半導体レーザ装置
。A GaAs substrate with a step, in which a first surface equivalent to the (001) plane and a second surface equivalent to the (111) As plane or the (110) plane are formed, and a Ga_0_. _5In_0
＿． _5P or (Al_xGa_1_-_x)_0_
．． _5In_0_. _5P (0<x<1) is used as an active layer, (Al_yGa_1_-_y)_0_. _5In_0
＿． _5P (0≦x<y≦1) or Al_0_. ＿５
In_0_. _5P as a cladding layer, the double heterostructure is formed on the GaAs substrate, and the wavelength of laser oscillation in the double heterostructure on the first surface and the second A two-wavelength integrated semiconductor laser device, wherein wavelengths of laser oscillation in the double heterostructure on the surface are different from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9193888A JPH01262686A (en) | 1988-04-14 | 1988-04-14 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9193888A JPH01262686A (en) | 1988-04-14 | 1988-04-14 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01262686A true JPH01262686A (en) | 1989-10-19 |
Family
ID=14040535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9193888A Pending JPH01262686A (en) | 1988-04-14 | 1988-04-14 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01262686A (en) |
-
1988
- 1988-04-14 JP JP9193888A patent/JPH01262686A/en active Pending
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