JPH01158633A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH01158633A JPH01158633A JP62317034A JP31703487A JPH01158633A JP H01158633 A JPH01158633 A JP H01158633A JP 62317034 A JP62317034 A JP 62317034A JP 31703487 A JP31703487 A JP 31703487A JP H01158633 A JPH01158633 A JP H01158633A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- film
- recording film
- information recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002425 crystallisation Methods 0.000 claims abstract description 28
- 230000008025 crystallization Effects 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 150000001335 aliphatic alkanes Chemical class 0.000 claims abstract description 4
- 150000001336 alkenes Chemical class 0.000 claims abstract description 4
- 150000001345 alkine derivatives Chemical class 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052787 antimony Inorganic materials 0.000 claims abstract 2
- 229910052733 gallium Inorganic materials 0.000 claims abstract 2
- 229910052745 lead Inorganic materials 0.000 claims abstract 2
- 229910052752 metalloid Inorganic materials 0.000 claims abstract 2
- 150000002738 metalloids Chemical class 0.000 claims abstract 2
- 229910052711 selenium Inorganic materials 0.000 claims abstract 2
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 2
- 229910052718 tin Inorganic materials 0.000 claims abstract 2
- -1 semimetal Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 abstract description 17
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 230000003647 oxidation Effects 0.000 abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 150000002739 metals Chemical class 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 101100146533 Photorhabdus luminescens rpsO gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000235 small-angle X-ray scattering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、高感度でかつ長寿命の情報記録媒体に関する
。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a highly sensitive and long-life information recording medium.
（従来の技術）
アルカンガス、アルケンガス又はアルキンガスのような
炭化水素ガスとＡｒのような希ガスとの混合雰囲気中で
Ｔｅその他の金属、半金属又は半導体（以下「金属等」
と呼ぶ）をスパッタ蒸着すると、基板上に堆積した情報
記録膜は、Ｘ線回折によっても特定指数面からの回折ピ
ークが認められないアモルファスであることが知られて
いる。(Prior Art) In a mixed atmosphere of a hydrocarbon gas such as alkane gas, alkene gas, or alkyne gas and a rare gas such as Ar, Te and other metals, semimetals, or semiconductors (hereinafter referred to as "metals, etc.")
It is known that when an information recording film (referred to as 1) is sputter-deposited on a substrate, the information recording film deposited on the substrate is an amorphous film in which no diffraction peak from a specific index plane is observed even by X-ray diffraction.
これはＴｅクラスタが炭化水素マトリクス中に分散して
、Ｔｅの凝集がマトリクスによって阻害されているため
である。ＣＨ４ガス中でＴｅをスパッタしたときには、
Ｘ線小角散乱法から、約３゜人の大きさのＴｅクラスタ
が炭化水素マトリクス中に分散していることが分ってい
る。以下このような記録膜を、代表してｒＴｅ−Ｃ膜」
と呼ぶ。This is because the Te clusters are dispersed in the hydrocarbon matrix and the aggregation of Te is inhibited by the matrix. When Te is sputtered in CH4 gas,
From small-angle X-ray scattering, it has been found that Te clusters of about 3 degrees in size are dispersed in the hydrocarbon matrix. Hereinafter, such a recording film will be referred to as rTe-C film.
It is called.
Ｔｅ−Ｃ膜は、本来は結晶状態で存在する金属等又はそ
の合金が、非常に細かく３０〜５０人の大きさで、炭素
及び水素中に分散しているため、記録膜全体としてみる
と一定の結晶指数面をもたない。分散質としての金属等
は様々な結晶指数面を有するが、これがランダムに配置
しているために、Ｘ線回折で調べても特定の位置（回折
角度）に回折ピークが生じないのである。Ｔｅ−Ｃ膜は
、金属等の単体やその合金膜に比べて、一般に電気伝導
度が悪いが、耐酸化性にはすぐれているという特色があ
る。Te-C film is made of metals or their alloys that originally exist in a crystalline state, which are dispersed in carbon and hydrogen in extremely fine particles the size of 30 to 50 people, so the recording film as a whole is constant. It has no crystalline index plane. Metals and the like as dispersoids have various crystalline index planes, but because these planes are arranged randomly, no diffraction peak occurs at a specific position (diffraction angle) even when examined by X-ray diffraction. A Te-C film generally has poorer electrical conductivity than a single metal or its alloy film, but is characterized by excellent oxidation resistance.
金属等の酸化反応は複雑であり、温度、湿度、気体雰囲
気（空気、ＣＯ２等）等によって反応が異なる。湿度の
影響の少ないか又はほとんど無視し得る状態での酸化は
、通常「乾食」と呼ばれるが、その反応メカニズムは湿
食と呼ばれる水溶液中の金属等の腐蝕反応と全く同様に
、酸化反応と還元反応が同時に同一表面で進行すると説
明されている。The oxidation reaction of metals and the like is complex, and the reaction varies depending on temperature, humidity, gas atmosphere (air, CO2, etc.), and the like. Oxidation under conditions where the influence of humidity is small or almost negligible is usually called "dry corrosion," but the reaction mechanism is an oxidation reaction that is exactly the same as the corrosion reaction of metals in an aqueous solution called wet corrosion. It is explained that the reduction reaction proceeds simultaneously on the same surface.
金属Ｍを例にとると、金属原子は酸化時に、結晶格子に
おいて下記（１）式に従って金属イオンと電子に解離す
る。Taking metal M as an example, during oxidation, metal atoms dissociate into metal ions and electrons in the crystal lattice according to the following formula (1).
Ｍ→Ｍ”十ｎｅ−・・・・・・・・・・・・（１）従っ
てこの電子を何らかの形で消費しなければ、金属表面の
近傍には、正と負の電荷をもった電気二重層が生じるの
みである。M→M”10ne−・・・・・・・・・・・・・・・(1) Therefore, unless these electrons are consumed in some way, there will be electricity with positive and negative charges near the metal surface. Only a double layer forms.
しかし、このとき下記（２）の還元反応が同時に進行す
ると、（１）で生じたｎｅ″″が消費される。However, if the reduction reaction (2) below proceeds simultaneously at this time, ne'' produced in (1) is consumed.
０□＋ｎｅ−→２０− ＋ （ｎ−２）ｅ−・・・・・
・・・・（２）
（１）と（２）の反応をまとめると、次の（３）式とな
り、酸化物が生成する。0□+ne−→20− + (n−2)e−・・・・
...(2) The reactions of (1) and (2) are summarized as the following equation (3), and an oxide is produced.
Ｍ＋０２４ （Ｍ（−”０２ ）＋（ｎ−２）ｅ−・・
・・・・（３）
そのためには（１）で生ずるｎｅ＝は、ただちに還元反
応が生ずる場所まで移動しなければならない。M+024 (M(-"02)+(n-2)e-...
...(3) For that purpose, ne= generated in (1) must immediately move to a place where a reduction reaction occurs.
しかし、電気伝導度がよい金属と金属の間に、Ｔｅ−Ｃ
膜のように炭素や水素のような不導体が存在すると電子
が移動できないため、連続的に酸化反応が進行していく
ことはない。従ってＴｅ−Ｃ膜の表面に、たまたま金属
等やその合金が露出していたとしても、その下地方向や
横方向への酸化の進行は阻止される。これがＴｅ−Ｃ膜
が耐酸化性に優れていることの理由である。長期間酸化
されないということは、長期間安定に一定の書込み能力
を有する、即ち寿命が長いということであり、これは追
記型の光記録媒体としては必要不可欠な要件である。However, between metals with good electrical conductivity, Te-C
When a nonconductor such as carbon or hydrogen is present in a film, electrons cannot move, so oxidation reactions do not proceed continuously. Therefore, even if a metal or its alloy happens to be exposed on the surface of the Te--C film, oxidation is prevented from proceeding in the underlying direction or in the lateral direction. This is the reason why the Te-C film has excellent oxidation resistance. The fact that it is not oxidized for a long period of time means that it has a constant writing ability over a long period of time, that is, it has a long life, and this is an essential requirement for a write-once optical recording medium.
ところでＴｅ−Ｃ膜は、前述のようにアモルファスであ
るため、結晶化温度が存在する。Ｔｅ−Ｃ膜の酸化のな
い状態における結晶化プロセスを調べるため、Ｎ２気流
中で昇温し、示差走査熱分析を行ったところ、Ｔｅ−Ｃ
膜の結晶化温度は、Ｔｅが多いほど低温側に位置し、Ｔ
ｅが減少するほど高温側にシフトすることが見い出され
た。By the way, since the Te-C film is amorphous as described above, there is a crystallization temperature. In order to investigate the crystallization process of the Te-C film in a non-oxidized state, the temperature was raised in a N2 stream and differential scanning calorimetry was performed.
The crystallization temperature of the film is located on the lower temperature side as the amount of Te increases;
It has been found that as e decreases, the temperature shifts to the higher temperature side.
（発明が解決しようとする問題点）
ところでレーザ光等の光によってヒートモード記録をす
る場合には、Ｔｅの多い方が光の吸収率が大きくなるた
め、感度も向上する。しかし記録膜中の炭素及び水素は
減少するため、前述の耐酸化性は悪化する。(Problems to be Solved by the Invention) By the way, when heat mode recording is performed using light such as a laser beam, the more Te there is, the higher the light absorption rate becomes, and the sensitivity also improves. However, since carbon and hydrogen in the recording film decrease, the above-mentioned oxidation resistance deteriorates.
炭素、水素及び金属等を含む記録膜が酸化される場合に
は、膜中の金属等同士が凝集して結晶化が起っている。When a recording film containing carbon, hydrogen, metals, etc. is oxidized, the metals, etc. in the film aggregate and crystallize.
従って耐酸化性能を維持していくためには、記録膜をで
きるだけ長くアモルファス状態に保つ必要がある。即ち
結晶化温度ができるだけ高い方がよい。しかし上に述べ
た通り、結晶化温度の高いものはＴｅが少ないため、光
記録の感度が低下する。Therefore, in order to maintain oxidation resistance, it is necessary to maintain the recording film in an amorphous state for as long as possible. That is, it is better that the crystallization temperature is as high as possible. However, as mentioned above, materials with a high crystallization temperature have less Te, so the sensitivity of optical recording decreases.
従来は、基板上に単層の記録膜を積層していたが、これ
では常に一定の結晶化温度をしか得ることができないた
め、結晶化温度の高いものにすれば記録感度が低下し、
他方結晶化温度の低いものにすれば耐酸化性が低下して
、２つの特性（記録感度と耐酸化性）を両立することは
困難であった。Conventionally, a single-layer recording film was laminated on a substrate, but this only allowed a constant crystallization temperature, so if a film with a high crystallization temperature was used, the recording sensitivity would decrease.
On the other hand, if the crystallization temperature is lowered, the oxidation resistance decreases, making it difficult to achieve both of the two characteristics (recording sensitivity and oxidation resistance).
［発明の構成コ
（問題点を解決するための手段）
本発明は上記問題点を解決するために、基板、並びに炭
素、水素及び金属、半金属又は半導体元素を含む、結晶
化温度を有するアモルファス状態の記録膜からなる情報
記録媒体において、基板上に互いに結晶化温度が異なる
記録膜を積層したことを特徴とする情報記録媒体を提供
する。[Structure of the Invention (Means for Solving the Problems)] In order to solve the above problems, the present invention provides a substrate, and an amorphous material having a crystallization temperature containing carbon, hydrogen, and a metal, semimetal, or semiconductor element. The present invention provides an information recording medium consisting of a state recording film, characterized in that recording films having different crystallization temperatures are stacked on a substrate.
（作用）
本発明によれば、従来と同一の膜厚の記録膜において、
互いに結晶化温度の異なる、即ち相対的に結晶化温度が
高い記録膜と低い記録膜を積層する。すると前述のよう
に結晶化温度の相対的に低い記録膜は記録感度を向上さ
せ、結晶化温度の相対的に高い記録膜は耐酸化性の向上
に寄与するため、記録感度と耐酸化性の２つの特性を同
時に良好に保つことができる。(Function) According to the present invention, in a recording film having the same thickness as the conventional one,
A recording film having a crystallization temperature different from each other, that is, a recording film having a relatively high crystallization temperature and a recording film having a relatively low crystallization temperature are laminated. Then, as mentioned above, a recording film with a relatively low crystallization temperature improves recording sensitivity, and a recording film with a relatively high crystallization temperature contributes to improving oxidation resistance, so the relationship between recording sensitivity and oxidation resistance is Two characteristics can be maintained well at the same time.
（実施例） 以下添附図面を参照して、本発明の詳細な説明する。(Example) The present invention will be described in detail below with reference to the accompanying drawings.
実施例１
第１図に示した真空排気装置において、真空チェンバ１
を常圧から０．５ｍＴｏｒｒまでは油回転ポンプ２で減
圧した後、切替弁２０をクライオポンプ３側にし、クラ
イオポンプ３を用いて５Ｘ１０−６Ｔｏｒｒ以下に排気
する。次いでメタンガス４を２０ Ｓ ＣＣＭとアルゴ
ンガス５を５ＳＣＣＭ、それぞれマスフローコントロー
ラ６及び７を通してチェンバ１内に導入する。Example 1 In the vacuum evacuation apparatus shown in FIG.
After reducing the pressure from normal pressure to 0.5 mTorr using the oil rotary pump 2, the switching valve 20 is set to the cryopump 3 side, and the cryopump 3 is used to exhaust the pressure to 5×10 −6 Torr or less. Then, 20 SCCM of methane gas 4 and 5 SCCM of argon gas 5 are introduced into the chamber 1 through mass flow controllers 6 and 7, respectively.
次いでイオンゲージ（図示せず）で測定しながら、チェ
ンバ１内の圧力が５ Ｘ １０’ Ｔｏｒｒになるよう
に排気量を制御する。圧力がこの値になったらさらに５
分間、圧力変動をイオンゲージで測定する。変化がなけ
れば下に磁石（図示せず）を配置したＴｅ（直径５イン
チ）カソード８に、直流スパッタ電源９から１００Ｗの
電力を投入してグロー放電を発生させ、いわゆるマグネ
トロン方式のスパッタリングでＰＣ（ポリカーボネート
）基板１１上に第１層１２を成膜する。放電は直流に限
らず、１３．５６ＭＨｚの高周波（ＲＦ）でもよい。な
お半導体をターゲットとする場合には直流電源ではなく
、高周波電源を用いる。Next, while measuring with an ion gauge (not shown), the exhaust amount is controlled so that the pressure inside the chamber 1 becomes 5×10' Torr. When the pressure reaches this value, add 5 more
Measure pressure fluctuations for minutes with an ion gauge. If there is no change, a glow discharge is generated by applying 100 W of power from a DC sputtering power source 9 to a Te (5 inch diameter) cathode 8 with a magnet (not shown) placed below it, and the PC is sputtered using the so-called magnetron method sputtering. A first layer 12 is deposited on a (polycarbonate) substrate 11 . The discharge is not limited to direct current, and may be 13.56 MHz radio frequency (RF). Note that when targeting semiconductors, a high frequency power source is used instead of a DC power source.
基板１１は、第１層１２と第２層１３の成膜中は５０
ｒｐｒＡで回転１７させ、全面にわったって均一に成膜
されるようにした。基板としては、ＰＣの他ポリメチル
メタクリレート（ＰＭＭＡ）等の有機樹脂や５ｉ０２（
石英ガラス）も用いることができる。成膜中には基板１
１の加熱は行わなかった。During the deposition of the first layer 12 and second layer 13, the substrate 11 is
The rprA was rotated 17 times to ensure that the film was formed uniformly over the entire surface. In addition to PC, the substrate can be made of organic resin such as polymethyl methacrylate (PMMA) or 5i02 (
quartz glass) can also be used. During film formation, the substrate 1
No heating was performed in step 1.
第１層１２を形成した後、直ちにクライオポンプ３によ
って５Ｘ１０ Ｔｏｒｒ以下に排気した。Immediately after forming the first layer 12, the temperature was evacuated to 5×10 Torr or less using the cryopump 3.
この圧力になったらメタンガス４を２０８ＣＣＭ。When this pressure is reached, add methane gas 4 to 208 CCM.
アルゴンガス５をＩＯ３ＣＣＭフローさせ、第１層の場
合と同様にして再度放電する。こうして第１層１２上に
第２層１３を積層した。Argon gas 5 is caused to flow through IO3CCM, and discharge is performed again in the same manner as in the case of the first layer. In this way, the second layer 13 was laminated on the first layer 12.
記録膜（第１層と第２層の膜厚の和）厚は２５０人とし
た。第１層の結晶化温度は１３０℃、第２層のそれは１
２０℃であった。The thickness of the recording film (the sum of the thicknesses of the first layer and the second layer) was 250. The crystallization temperature of the first layer is 130℃, that of the second layer is 1
The temperature was 20°C.
放電終了後は窒素１０でチェンバ１内をリークして大気
圧に戻し、結晶化温度の相異なるＴｅ−Ｃ膜が積層され
たＰＣ基板１５を取出す。After the discharge is completed, the inside of the chamber 1 is leaked with nitrogen 10 to return it to atmospheric pressure, and the PC board 15 on which Te--C films having different crystallization temperatures are laminated is taken out.
光デイスク用の記録媒体として用いる場合には、予め基
板上に案内溝（プリグループ）の形成された円板状の基
板を用いる。When used as a recording medium for an optical disk, a disk-shaped substrate on which guide grooves (pre-groups) are formed in advance is used.
実施例２〜４
実施例１と同様の方法によって、第１層と第２層の膜厚
の和を２５０人とし、第１層と第２層の結晶化温度がそ
れぞれ１１０℃と１００℃、１１５℃と１１０℃、並び
に１２０℃と１１５℃の２層の記録膜を積層した情報記
録媒体を形成した。Examples 2 to 4 By the same method as in Example 1, the sum of the thicknesses of the first layer and the second layer was 250, and the crystallization temperatures of the first layer and the second layer were 110°C and 100°C, respectively. An information recording medium was formed by laminating two recording films at 115° C. and 110° C. and 120° C. and 115° C.
第２図に実施例１〜４の成膜した案内溝付きｐｃ基板を
１８０ Ｏｒｐｍで回転させ、波長８３゜ｒｕｎの半導
体レーザで書込んだ場合の変調度を示す。FIG. 2 shows the degree of modulation when the PC substrates with guide grooves on which the films of Examples 1 to 4 were formed were rotated at 180 Orpm and written with a semiconductor laser having a wavelength of 83° run.
パルス幅は６０ ｎ５ｅｃとした。比較のため、膜厚２
５０人のＴｅ−Ｃ単層の記録膜（結晶化温度１４０℃）
に書込んだ結果（比較例１）も同時に示した。本発明の
記録膜（実施例１〜４）の方が高感度であることが分る
。The pulse width was 60 n5ec. For comparison, film thickness 2
50 Te-C single layer recording film (crystallization temperature 140℃)
The results written in (Comparative Example 1) are also shown at the same time. It can be seen that the recording films of the present invention (Examples 1 to 4) have higher sensitivity.
第３図には本発明の２層の記録膜（実施例１〜４）と第
２図に示した比較例１の記録膜、さらに同一の厚さのＴ
ｅ単層膜（比較例２）の高温高湿下における寿命テスト
（加速テスト）の結果を示す。条件は６５℃−９０％と
した。FIG. 3 shows the two-layer recording film of the present invention (Examples 1 to 4) and the recording film of Comparative Example 1 shown in FIG.
e The results of a life test (accelerated test) of a single layer film (Comparative Example 2) under high temperature and high humidity are shown. The conditions were 65°C-90%.
寿命のモニターパラメータとして記録膜面の反射率（波
長８３０ ｒ＋＋ｕにおける分光反射率）を、初期値を
１に規格化して示した。The reflectance of the recording film surface (spectral reflectance at a wavelength of 830 r++u) was normalized to an initial value of 1 and shown as a monitoring parameter for the life span.
これをみると、Ｔｅ膜（比較例２）はわずか数日で急激
な変化があるが、本発明の記録膜（実施例１〜４）はほ
とんど変化していない。比較した王者のうちでは比較例
１が最寿命であったが、第２図に示した光記録の書込み
感度は悪く、二律相反の関係となっている。従って本発
明による記録膜か、記録感度及び寿命を総合的に判断し
て最も優れていることが分る。Looking at this, it can be seen that the Te film (Comparative Example 2) undergoes a rapid change in just a few days, but the recording film of the present invention (Examples 1 to 4) shows almost no change. Although Comparative Example 1 had the longest lifespan among the champions compared, the writing sensitivity of the optical recording shown in FIG. 2 was poor, resulting in an antinomian relationship. Therefore, it can be seen that the recording film according to the present invention is the most excellent in terms of recording sensitivity and lifespan.
なお上記実施例では炭化水素ガスとして、アルカンガス
（メタンガス）を用いたが、エチレンガスなどのアルケ
ンガス、アセチレンなどのアルキンガスを用いてもよい
。Although alkane gas (methane gas) was used as the hydrocarbon gas in the above embodiment, an alkene gas such as ethylene gas or an alkyne gas such as acetylene may also be used.
また本実施例においては、金属等としてＴｅを用いたが
、Ｓｅ、Ｂｉ、Ｇ ｅ ＳＳ ｂ ％ Ｓ ｎ ｓ Ｐ
ｂ ｓＧａ、Ｉｎ又はＡｇも用いることができる。Further, in this example, Te was used as the metal etc., but Se, Bi, G e SS b % S n s P
b sGa, In or Ag can also be used.
［発明の効果］
以上説明したように本発明によれば、光記録特性として
の高感度と長寿命の両長所を兼ね備えた情報記録媒体を
得ることができる。[Effects of the Invention] As explained above, according to the present invention, it is possible to obtain an information recording medium that has both the advantages of high sensitivity and long life as optical recording characteristics.
第１図は本発明の一実施例に係る真空成膜装置を示す図
、第２図は本発明の一実施例の記録感度を示すグラフ図
、及び第３図は本発明の一実施例の加速テストの結果を
示すグラフ図である。
１・・・・・・真空チェンバ、４・・・・・・メタンガ
ス、５・・・・・・アルゴンガス、８・・・・・・Ｔｅ
ターゲット。
出願人代理人 弁理士 鈴江武彦
第１図
ｆ夜−２＋し一ザ ハ１ワー
ｌ￥２図
ヤσ５丈１代
第３図FIG. 1 is a diagram showing a vacuum film forming apparatus according to an embodiment of the present invention, FIG. 2 is a graph diagram showing recording sensitivity of an embodiment of the present invention, and FIG. 3 is a diagram showing a recording sensitivity of an embodiment of the present invention. FIG. 3 is a graph diagram showing the results of an acceleration test. 1... Vacuum chamber, 4... Methane gas, 5... Argon gas, 8... Te
target. Applicant's agent Patent attorney Takehiko Suzue Figure 1 f Night - 2 + Shiichiza Ha 1 War l ¥ 2 Figure Ya σ5 Jyo 1 Generation Figure 3
Claims (5)
導体元素を含む、結晶化温度を有するアモルファス状態
の記録膜からなる情報記録媒体において、基板上に互い
に結晶化温度が異なる記録膜を積層したことを特徴とす
る情報記録媒体。(1) In an information recording medium consisting of a substrate and an amorphous recording film containing carbon, hydrogen, and a metal, semimetal, or semiconductor element and having a crystallization temperature, recording films having different crystallization temperatures are laminated on the substrate. An information recording medium characterized by:
、Ｓｎ、Ｐｂ、Ｇａ、Ｉｎ又はＡｇである特許請求の範
囲第１項記載の情報記録媒体。(2) The metal element is Te, Se, Bi, Ge, Sb
, Sn, Pb, Ga, In, or Ag.
アルキンガス、及び希ガスからなる雰囲気中で金属、半
金属又は半導体元素をスパッタ蒸着して形成する特許請
求の範囲第１項記載の情報記録媒体。(3) Information recording according to claim 1, wherein the recording film is formed by sputter deposition of a metal, metalloid, or semiconductor element in an atmosphere consisting of an alkane gas, an alkene gas, an alkyne gas, and a rare gas. Medium.
ある特許請求の範囲第１項記載の情報記録媒体。(4) The information recording medium according to claim 1, wherein the recording film is a heat mode recording film.
００℃以下である特許請求の範囲第１項記載の情報記録
媒体。(5) The mutually different crystallization temperatures are 100°C or more;
The information recording medium according to claim 1, which has a temperature of 00°C or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62317034A JPH01158633A (en) | 1987-12-15 | 1987-12-15 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62317034A JPH01158633A (en) | 1987-12-15 | 1987-12-15 | Information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01158633A true JPH01158633A (en) | 1989-06-21 |
Family
ID=18083685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62317034A Pending JPH01158633A (en) | 1987-12-15 | 1987-12-15 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01158633A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0936605A1 (en) * | 1998-02-10 | 1999-08-18 | Sony Corporation | Optical recording medium and manufacturing method thereof |
| US6996055B2 (en) | 2002-04-30 | 2006-02-07 | Tdk Corporation | Optical recording medium and method for optically recording data in the same |
| US7141289B2 (en) | 2003-08-25 | 2006-11-28 | Tdk Corporation | Optical information recording medium |
| US7157128B2 (en) | 2003-07-23 | 2007-01-02 | Tdk Corporation | Optical information recording medium |
| US7231649B2 (en) | 2002-05-31 | 2007-06-12 | Tdk Corporation | Optical recording medium and method for optically recording data in the same |
| US7321481B2 (en) | 2002-07-04 | 2008-01-22 | Tdk Corporation | Optical recording medium |
-
1987
- 1987-12-15 JP JP62317034A patent/JPH01158633A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0936605A1 (en) * | 1998-02-10 | 1999-08-18 | Sony Corporation | Optical recording medium and manufacturing method thereof |
| US6996055B2 (en) | 2002-04-30 | 2006-02-07 | Tdk Corporation | Optical recording medium and method for optically recording data in the same |
| US7231649B2 (en) | 2002-05-31 | 2007-06-12 | Tdk Corporation | Optical recording medium and method for optically recording data in the same |
| US7321481B2 (en) | 2002-07-04 | 2008-01-22 | Tdk Corporation | Optical recording medium |
| US7157128B2 (en) | 2003-07-23 | 2007-01-02 | Tdk Corporation | Optical information recording medium |
| US7141289B2 (en) | 2003-08-25 | 2006-11-28 | Tdk Corporation | Optical information recording medium |
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