JPH01113914A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH01113914A JPH01113914A JP27009887A JP27009887A JPH01113914A JP H01113914 A JPH01113914 A JP H01113914A JP 27009887 A JP27009887 A JP 27009887A JP 27009887 A JP27009887 A JP 27009887A JP H01113914 A JPH01113914 A JP H01113914A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- recording medium
- protective film
- amorphous carbon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 69
- 230000001681 protective effect Effects 0.000 claims abstract description 40
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 55
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 18
- 230000007797 corrosion Effects 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910020630 Co Ni Inorganic materials 0.000 description 2
- 229910002440 Co–Ni Inorganic materials 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 perfluoroalkyl ether Chemical compound 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気ディスク装置または磁気ドラム装置などに
用いられる磁気記録媒体に係り、特にアモルファスカー
ボン保護膜を有する耐摺動性ならびに耐食性に優れた信
頼性の高い磁気記録媒体に関する◇
〔従来の技術〕
一般に、記録再生用磁気ヘッド（以下ヘッドと呼ぶ）と
磁気記録媒体で構成される磁気記録装置の記録再生方法
において、記録再生の開始前に、ヘッド七磁気記録媒体
面とを接触状態でセットした後、磁気記録媒体を回転し
て、ヘッドと磁気記録媒体面との間に薄い空気層のギャ
ップを作り、この状態で記録再生する、いわゆるコンタ
クト・スタート・ストップ方式（以下Ｃ８Ｓと呼ぶ）が
採用されている。このＣ８Ｓでは、磁気記録媒体の回転
開始時および回転停止時には、ヘッドと磁気記録媒体面
は接触し、摩擦状態となる。この、接触摩擦状態におけ
るヘッドと磁気記録媒体との間に生ずる接触摩擦力は、
ヘッドおよび磁気記録媒体を摩耗させ、ついにはヘッド
および磁性媒体に傷が発生し、いわゆるヘッドクラッシ
ュが生じる。才た、上記の接触摩擦状態においてヘッド
のわずかな姿勢の変化がヘッドにかかる荷重を不均一に
させ、ヘッドおよび磁気記録媒体の表面に傷をつける場
合もある。また、磁気記録媒体の磁気記録層（磁性層）
が金属である場合（例えばＣｏ−Ｎｉ系磁性層など）は
、高湿度下に２いて水分の付着および侵入°によって電
池作用が生じ腐食が発生する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a magnetic recording medium used in a magnetic disk device or a magnetic drum device, and in particular, a magnetic recording medium that has an amorphous carbon protective film and has excellent sliding resistance and corrosion resistance. Regarding highly reliable magnetic recording media ◇ [Prior art] In general, in the recording and reproducing method of a magnetic recording device consisting of a magnetic head for recording and reproducing (hereinafter referred to as a head) and a magnetic recording medium, before the start of recording and reproducing. After the head is set in contact with the magnetic recording medium surface, the magnetic recording medium is rotated to create a thin air gap between the head and the magnetic recording medium surface, and recording and reproduction is performed in this state. A contact start-stop system (hereinafter referred to as C8S) is adopted. In this C8S, when the magnetic recording medium starts rotating and stops rotating, the head and the magnetic recording medium surface come into contact, creating a frictional state. The contact friction force generated between the head and the magnetic recording medium in this contact friction state is:
This wears out the head and the magnetic recording medium, and eventually causes scratches on the head and the magnetic medium, resulting in a so-called head crash. In the above-mentioned contact friction state, a slight change in the posture of the head causes the load applied to the head to become uneven, which may cause damage to the surface of the head and the magnetic recording medium. Also, the magnetic recording layer (magnetic layer) of a magnetic recording medium
If it is made of metal (for example, a Co--Ni magnetic layer), if it is exposed to high humidity, the adhesion and intrusion of moisture will cause a battery effect and cause corrosion.
これらの厚粍および腐食を防ぐために、種々の保護膜を
磁性層上に設ける方法が提案されている。In order to prevent these thickening and corrosion, methods of providing various protective films on the magnetic layer have been proposed.
例えば、グラファイトをターゲットとしてＡｒガス。For example, Ar gas using graphite as a target.
ＡｒガスにＨ２１Ｎ２ｔ ０２ｅ ＣＨ４、ＣＩ（ｓＯ
Ｈなどを添加した雰囲気中でスパッタリングを行いカー
ボン保護膜を形成させる方法、Ｓ ＯＧ （５ｉ（ＯＨ
）ｚ＋メタノール溶媒）をスビンコートシ、焼き付けて
５ｉｎ２楔とし、その上にパーフルオロアルキルエーテ
ルなどの潤滑油を塗布する方法などが検討されているが
、いずれも十分な耐摺動性ならびに耐食性を得るまでに
は至らなかった。H21N2t 02e CH4, CI(sO
SOG (5i(OH
) Z + methanol solvent) is coated with a 5in2 wedge and baked to form a 5in2 wedge, and a method of applying lubricating oil such as perfluoroalkyl ether on top of it is being considered, but in either case, it will not work until sufficient sliding and corrosion resistance is achieved. It didn't reach that point.
また、炭化水素ガスを用いてプラズマＣＶＤ法によって
、磁性層上に炭素質の膜を形成させて保り膜としている
場合もあるｏしかし、プラズマＣＶＤ法によって得られ
た炭素質の保護膜は、たとえＲＢ’プラズマを用いたと
しても基板側に電圧がかからないため、有機質の農にな
り易く、通常のプラズマ重合膜に近い組成のものとなり
、良質の炭素質の保ａ膜を形成させることができなかっ
た。な右、この種の保護膜に関連する公知文献として、
例えは時開１１８６１−５０６７１号公報９％開昭６０
−１５７７２６号公報などが挙げられる。In some cases, a carbonaceous film is formed on the magnetic layer by the plasma CVD method using hydrocarbon gas to serve as a protective film.However, the carbonaceous protective film obtained by the plasma CVD method is Even if RB' plasma is used, since no voltage is applied to the substrate side, it is easy to form an organic material, and the composition is close to that of a normal plasma polymerized film, making it possible to form a high-quality carbonaceous a-retaining film. There wasn't. On the right, known documents related to this type of protective film include:
For example, Jikai Publication No. 11861-50671 9% Kaisho 60
-157726, etc.
上述したごとく、従来技術における強磁性金属薄膜を磁
性層とする磁気記録媒体において、ヘッドとの耐摺動性
ならびに耐食性が悪く、ヘッドクラッシュなどによる磁
気記録媒体の損傷あるいは高湿度環境下における腐食作
用による磁気特性の劣化などが生じ易く、磁気記録媒体
としての耐久性ならびに信頼性に欠けるという欠点があ
った。As mentioned above, conventional magnetic recording media in which the magnetic layer is a ferromagnetic metal thin film have poor sliding resistance with the head and poor corrosion resistance, resulting in damage to the magnetic recording media due to head crashes or corrosion in high-humidity environments. This has the disadvantage that magnetic properties tend to deteriorate due to oxidation, resulting in a lack of durability and reliability as a magnetic recording medium.
本発明の目的は、上記従来技術の欠点を解消し、強磁性
金属薄膜を磁性層とする磁気記録媒体において、従来技
術において考慮されていなかった保護膜の密度、硬さお
よび水に対する濡れ性（表面エネルギ）８指標として、
耐摺動性と耐食性七を大幅に向上させるこ七のできる保
護膜を設けた耐久性および信頼性に優れた磁気記録媒体
を提供することにある。An object of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a magnetic recording medium having a ferromagnetic metal thin film as a magnetic layer, with the density, hardness, and water wettability of the protective film, which were not considered in the prior art. surface energy) as 8 indicators,
The object of the present invention is to provide a magnetic recording medium with excellent durability and reliability, which is provided with a protective film that greatly improves sliding resistance and corrosion resistance.
上記本発明の目的は、磁気記録媒体に設ける保ＭＭの成
膜十法七してバイアスプラズマＣＶＤ法を用いることに
より、密度が高く、硬さが大きく、かつ水の濡れ性の悪
い、つまり低エネルギ表面を持つ、アモルファスカーボ
ン膜を磁性層の保護膜として形成させることにより、達
成される。The purpose of the present invention is to provide a film with high density, high hardness, and poor water wettability, that is, low This is achieved by forming an amorphous carbon film with an energetic surface as a protective film for the magnetic layer.
な詔、ここで述べるバイアスプラズマＣＶＤ法とは高周
波電圧、低周波電圧または交流電圧を基板に印加するこ
とによって基板側に自己バイアスを生じさせるものであ
り、この自己バイアスによって従来技術によるプラズマ
ＣＶＤ法によって成膜した炭素質の保護膜よりも密度が
高く、硬さが大きく、かつ水の濡れ性の悪いアモルファ
スカーボン保護膜を得るこ七ができ、磁気記録媒体の耐
摺動性ならびに耐食性を一段と向上させることができる
。The bias plasma CVD method described here is a method in which a self-bias is generated on the substrate side by applying a high-frequency voltage, a low-frequency voltage, or an alternating current voltage to the substrate. This makes it possible to obtain an amorphous carbon protective film that has a higher density, greater hardness, and poor water wettability than the carbonaceous protective film formed by the method, and further improves the abrasion resistance and corrosion resistance of magnetic recording media. can be improved.
本発明の磁気記録媒体に設けるアモルファスカーボン保
護膜の指標として、その密就、硬さおよび累に対する濡
れ性（表面エネルギ）は、それぞれ次のように作用する
ものと考えられる。As indicators of the amorphous carbon protective film provided in the magnetic recording medium of the present invention, its density, hardness, and wettability (surface energy) are considered to function as follows.
保！！！膜の密度はアモルファスカーボン膜の緻密度を
示しており、酸化性のガス（例えばＯｘ ｅ Ｈ２Ｏな
ど）の透過性を左右するものであり、保護膜の密度が大
きい程酸化性のガスの透過を防止し耐食性を向上させる
ことになる。保護膜の硬さは、ヘッドのＣ８Ｓ時に接触
＊謙が生じるため、保護膜の硬さか大きいａ摩耗し難く
耐摩耗性向上の指標となる。さらに、水の濡れ性（表面
エネルギ）は高湿度環境下における水分の侵入の目安と
なり、撥水性となる程、耐食性が向上することｌこなる
。Safe! ! ! The density of the film indicates the density of the amorphous carbon film, and it affects the permeability of oxidizing gases (for example, Oxe H2O, etc.), and the higher the density of the protective film, the better the permeation of oxidizing gases. This will prevent corrosion and improve corrosion resistance. The hardness of the protective film is determined by the hardness of the protective film, since contact occurs during C8S of the head. Furthermore, water wettability (surface energy) is a measure of moisture intrusion in a high humidity environment, and the more water repellent the material, the better the corrosion resistance.
また、アモルファスカーボン保護膜の形成手法として、
バイアスプラズマＣＶＤ法を採用することにより、従来
のプラズマＣＶＤ法に比べ、成膜された保護膜は高密度
、高硬度、低表面エネ□ルギを確保することができる。In addition, as a method for forming an amorphous carbon protective film,
By employing the bias plasma CVD method, the formed protective film can have higher density, higher hardness, and lower surface energy than the conventional plasma CVD method.
つまり、例えば炭化水素ガスを導入し、プラズマを発生
させた場合、通常のプラズマＣＶＤ法では、プラズマ重
合と同様の過程で炭化水素の分解・再結合、堆積により
成膜される。この場合、たとえ高周波（ＲＦ）を用いて
も数十ボルト程度のバイアス電圧が基板に印加される程
度であり、バイアスプラズマＣＶＤ法のごとく、電圧が
印加される電極側に基板がある場合のように数百〜数千
ボルトの電圧が基板に印加されないため、炭化水素が分
解しイオン化して基板に衝突するエネルギが極めて小さ
い。このため、通常のプラズマＣＶＤ法では、炭化水素
をプラズマ中で分解・再結合させることで有機質的な炭
素膜しか得られない。これに対し、バイアスプラズマＣ
ＶＤ法では、電圧が印加される電極側に基板があるので
、基板にプラズマ発生時の電圧が印加され、イオン化さ
れた炭化水素はプラズマ発生時の電圧により加速され、
基板Ｉこ衝突し堆積される。さらに、基板表面に堆積し
た膜は、随時、加速され衝突するイオンによりたたかれ
、これにより脱水素反応が生じ、緻密な炭素膜が形成さ
れる。このため、上述した保護膜の密度、硬さ、水の濡
れ性が改善され、耐摩耗性、耐食性に優れたアモルファ
スカーボン膜を形成させることができる。本発明のアモ
ルファスカーボン保護膜は、密度が２．０ｇ／ｃｄ以上
、硬度（Ｈｖ）が２０００以上、水に対する濡れ性（接
触角）が′９０°以上となり、磁気記録媒体の耐摺動性
、耐食性を大幅に向上させることができる。That is, for example, when hydrocarbon gas is introduced and plasma is generated, in the normal plasma CVD method, a film is formed by decomposing, recombining, and depositing hydrocarbons in a process similar to plasma polymerization. In this case, even if radio frequency (RF) is used, a bias voltage of about several tens of volts is applied to the substrate, and this is similar to when the substrate is on the electrode side to which the voltage is applied, as in bias plasma CVD method. Since no voltage of several hundred to several thousand volts is applied to the substrate, the energy required for hydrocarbons to decompose, ionize, and collide with the substrate is extremely small. Therefore, in the normal plasma CVD method, only an organic carbon film can be obtained by decomposing and recombining hydrocarbons in plasma. On the other hand, bias plasma C
In the VD method, since the substrate is on the electrode side to which voltage is applied, the voltage at the time of plasma generation is applied to the substrate, and the ionized hydrocarbons are accelerated by the voltage at the time of plasma generation.
The substrate I collides with it and is deposited. Furthermore, the film deposited on the substrate surface is bombarded by accelerated and colliding ions from time to time, which causes a dehydrogenation reaction and forms a dense carbon film. Therefore, the density, hardness, and water wettability of the above-mentioned protective film are improved, and an amorphous carbon film with excellent wear resistance and corrosion resistance can be formed. The amorphous carbon protective film of the present invention has a density of 2.0 g/cd or more, a hardness (Hv) of 2000 or more, a water wettability (contact angle) of 90° or more, and has excellent sliding resistance for magnetic recording media. Corrosion resistance can be significantly improved.
な右、本発明のバイアスプラズマＣＶＤ法において、保
護膜の成膜時に印加する低周波とは１６〜２５０ｋＨｚ
、高周波とは２５０ ｋＨｚ以上、交流の場合は５０〜
１５ｋｌｌｚの範囲の周波数を有する電源を云う。On the right, in the bias plasma CVD method of the present invention, the low frequency applied when forming the protective film is 16 to 250 kHz.
, high frequency is 250 kHz or more, and for alternating current 50~
Refers to a power supply having a frequency in the range of 15kllz.
以下に本発明の一実施例を挙げ、図面を参照しながらさ
らに詳細に説明する。第１図は本実施例において作製し
た磁気ディスクの断面構造を示す模式図である。図に忽
いて基板１上に下地層２゜磁気記録層３．および保護膜
４を設けた磁気ディスクである。An embodiment of the present invention will be described below in more detail with reference to the drawings. FIG. 1 is a schematic diagram showing the cross-sectional structure of the magnetic disk manufactured in this example. As shown in the figure, a base layer 2, a magnetic recording layer 3. and a magnetic disk provided with a protective film 4.
基板１は、アルミニウム合金または陽極酸化したアルマ
イトあるいはＮ１−Ｐ合金めつき膜を設けたもの、また
はガラス板などを基体上して構成されている０下地層２
は、Ｃｒ＊ Ｒｆｋｌ、 Ｗ 、 Ｔｉ ＊ Ｓｔなど
の金属または合金の薄膜からなり、この下地層２の上に
磁気記録層３として、Ｃｏ −Ｎｉ 、 Ｃｏ −Ｎｉ
−Ｐ＊Ｃｏ−Ｃｒ、 Ｃｏ−Ｐｔｅ Ｃｏ −Ｎｉ−
ＣｒなどのＣｏ系合金膜をスパッタリング法により成膜
し、さらに磁気記録層３上に、炭化水素ガスを含む雰囲
気中で、ＲＦバイアスプラズマＣＶＤ法、低周波バイア
スプラズマＣＶＤ法によって形成されたアモルファスカ
ーボン保護膜を被覆している。The substrate 1 includes an aluminum alloy, anodized alumite, an N1-P alloy plated film, or a base layer 2 formed by placing a glass plate or the like on the substrate.
is made of a thin film of metal or alloy such as Cr*Rfkl, W, Ti*St, etc., and a magnetic recording layer 3 of Co-Ni, Co-Ni, etc. is formed on this underlayer 2.
-P*Co-Cr, Co-Pte Co -Ni-
A Co-based alloy film such as Cr is formed by a sputtering method, and amorphous carbon is further formed on the magnetic recording layer 3 by an RF bias plasma CVD method or a low frequency bias plasma CVD method in an atmosphere containing hydrocarbon gas. Covered with a protective film.
−第２図は本実施例において用いたアモルファスカーボ
ン保護膜の形成装置の構造を示す模式図である。そして
、アモルファスカーボン保護膜を形成させる手順として
、まず磁気記録層３を形成させた磁気ディスク基板７を
、電力を印加する電極５に取り付け、対抗電極６に対し
平行に配置して、真空槽９内％ Ｉ Ｘ １０−’Ｔｏ
ｒｒ以下に排気した後、ガス導入口８より、炭化水素ガ
スを含むガスを導入し、真空槽９内を所定の圧力に設定
する。この後、電極５にＲＦ、低周波または交流の電源
１１により電力を印加して放電を生じせしめ、磁気ディ
スク基板７上にアモルファスカーボン保護膜を形成させ
る。- FIG. 2 is a schematic diagram showing the structure of the amorphous carbon protective film forming apparatus used in this example. As a procedure for forming an amorphous carbon protective film, first, the magnetic disk substrate 7 on which the magnetic recording layer 3 has been formed is attached to the electrode 5 to which electric power is applied, placed parallel to the counter electrode 6, and placed in the vacuum chamber 9. % I X 10-'To
After evacuation to below rr, a gas containing hydrocarbon gas is introduced from the gas inlet 8 to set the inside of the vacuum chamber 9 to a predetermined pressure. Thereafter, electric power is applied to the electrode 5 by an RF, low frequency, or AC power source 11 to cause discharge, and an amorphous carbon protective film is formed on the magnetic disk substrate 7.
本発明のアモルファスカーボン保護膜の形成可能な電源
としては、ＲＦ、低周波または交流電源であり、ＤＣ電
源では生成されるアモルファスカーボン保護膜が絶縁性
であるためにプラズマ放電が不安定となり易く、場合に
よっては放電が停止するなど保護膜の形成プロセスが不
安定となるので、ＤＣプラズマは不適当である〇
また、本発明のアモルファスカーボン保護膜の形成にお
いて、使用できる炭化水素ガスは、メタン、エタン、プ
ロパン、エチレン、アセチレン。Power sources that can form the amorphous carbon protective film of the present invention include RF, low frequency, or AC power; with DC power, the amorphous carbon protective film produced is insulative, so plasma discharge tends to become unstable; In some cases, the process of forming the protective film becomes unstable, such as by stopping the discharge, so DC plasma is unsuitable. In addition, in the formation of the amorphous carbon protective film of the present invention, hydrocarbon gases that can be used include methane, Ethane, propane, ethylene, acetylene.
ブタンなどを挙げることができ、その他、液体状の炭化
水素であるベンゼン、トルエン、キシレン。Examples include butane, and other liquid hydrocarbons such as benzene, toluene, and xylene.
ペンタン、ヘキサン、ヘプタンなどを蒸気化して使用す
るこ七もできる。そして、これらの炭化水素ガスまたは
蒸気にＨ２，Ａｒなどのガスを混合して使用してもよい
。アモルファスカーボン保護膜の膜厚範囲は、１１００
ｎ以下が好ましく、より好ましい範囲は５〜６０ｎｍで
ある。さらに、本発明のアモルファスカーボン保１ａｐ
ａを形成させる真空槽内のガス圧力範囲は数ｍＴｏｒｒ
〜ＩＴｏｒｒ の範囲が望ましく、特に望ましい範囲
は５〜５００ｍＴｏｒｒである０
上述した成膜手法に基づき、種々の成膜条件下でアモル
ファスカーボン保護膜を形成させて磁気ディスクを作製
（実施例１〜１０）シ、その耐摺動性および耐食性を評
価した。その結果を第１表に示す。なお、ここで、比較
例として、通常のプラズマＣＶＤ法により磁気ディスク
基板７を対抗電極６に取付けて成膜した場合（比較例１
）およびグラファイトをターゲットとして通常のスパッ
タリング法でカーボン膜を形成した場合（比較例２）を
示す。そして、磁気ディスクの耐摺動性はヘッドと５０
に回Ｃ８Ｓさせた後の傷の発生状況および出力変動の幅
によって評価し、耐食性は８０°Ｃ９２％Ｒ）ｆの環境
下で５力月放置後のエラーの増加数および保護膜の密度
、硬さ、水に対する濡れ（表面エネルギ）８測定し評価
した。また、磁気ディスク基板の構成としては、基体と
してＡＩ −Ｍｇ合金。It is also possible to vaporize and use pentane, hexane, heptane, etc. These hydrocarbon gases or vapors may be mixed with gases such as H2 and Ar. The thickness range of the amorphous carbon protective film is 1100
It is preferably n or less, and the more preferable range is 5 to 60 nm. Furthermore, the amorphous carbon retainer 1ap of the present invention
The gas pressure range in the vacuum chamber that forms a is several mTorr.
~ ITorr is desirable, and a particularly desirable range is 5 to 500 mTorr.0 Based on the film formation method described above, amorphous carbon protective films were formed under various film formation conditions to produce magnetic disks (Examples 1 to 10). ), its sliding resistance and corrosion resistance were evaluated. The results are shown in Table 1. Here, as a comparative example, a film was formed by attaching the magnetic disk substrate 7 to the counter electrode 6 by the usual plasma CVD method (Comparative Example 1).
) and a case (Comparative Example 2) in which a carbon film was formed by a normal sputtering method using graphite as a target. The sliding resistance of the magnetic disk is 50% compared to the head.
Corrosion resistance was evaluated by the occurrence of scratches and the width of output fluctuation after being subjected to C8S for 5 months at 80°C, 92% Wetness (surface energy) against water was measured and evaluated. Moreover, as for the structure of the magnetic disk substrate, an AI-Mg alloy is used as the base material.
下地層として厚さ２００ｎｍＯＪＣｒ層、磁気記録層と
して厚さ６０ ｎｍのＣｏ −Ｎｉ合金層を設けた。A 200 nm thick OJCr layer was provided as an underlayer, and a 60 nm thick Co--Ni alloy layer was provided as a magnetic recording layer.
第１表から明らかなごとく、本発明による磁気ディスク
はいずれも耐摺動性および耐食性が共に大幅に向上し、
極めて耐久性に優れた磁気記録媒体が得られることが分
かる。As is clear from Table 1, the magnetic disks according to the present invention both have significantly improved sliding resistance and corrosion resistance.
It can be seen that a magnetic recording medium with extremely excellent durability can be obtained.
以上詳細に説明したごとく、本発明のアモルファスカー
ボン保護膜を設けることにより、ヘッドとの耐摺動性な
らびに耐食性を一段と向上させることができ、耐久性な
らびに信頼性の高い磁気記録媒体が得られる。そして、
アモルファスカーボン保護膜の形成速度が、従来のスパ
ッタリング法に比べ約１０〜５０倍と速く、かつ安定し
た条件で成膜することができ、また成膜用の炭化水素ガ
スのコストがスパッタリング法によるグラファイトター
ゲットに比べて約１１５以下と安価であるため、価格の
安い信頼性の高い磁気記録媒体を生産性よく提供するこ
とができる。As explained in detail above, by providing the amorphous carbon protective film of the present invention, the sliding resistance with the head and the corrosion resistance can be further improved, and a magnetic recording medium with high durability and reliability can be obtained. and,
The formation speed of the amorphous carbon protective film is approximately 10 to 50 times faster than that of the conventional sputtering method, and the film can be formed under stable conditions. Since it is less expensive than the target, at about 115 or less, it is possible to provide an inexpensive and highly reliable magnetic recording medium with high productivity.
第１図は本発明の実施例において作製した磁気ディスク
の断面構造を示す模式図、第２図は本発明の実施例にお
いて用いたアそルファスカーボン保護膜の形成装置の構
造を示す模式図である。
符号の説明
１・・・基板 ２・・・下地層３・・・磁気
記録層 ４・・・保謙膜５・・・電極
６・・・対抗電極７・・・磁気ディスク基板FIG. 1 is a schematic diagram showing the cross-sectional structure of a magnetic disk manufactured in an example of the present invention, and FIG. 2 is a schematic diagram showing the structure of an amorphous carbon protective film forming apparatus used in an example of the present invention. be. Explanation of symbols 1... Substrate 2... Base layer 3... Magnetic recording layer 4... Protective film 5... Electrode
6...Counter electrode 7...Magnetic disk substrate
Claims (1)
磁性金属薄膜からなる磁気記録層を形成させた磁気記録
媒体において、上記磁気記録層の上にアモルファスカー
ボン保護膜を設けたことを特徴とする磁気記録媒体。 ２、アモルファスカーボン保護膜は、炭化水素ガスを含
む雰囲気中で、高周波電圧または低周波電圧もしくは交
流電圧を基板に印加し、基板側に自己バイアスを生じさ
せるバイアスプラズマＣＶＤ法によつて成膜したもので
あることを特徴とする特許請求の範囲第１項に記載の磁
気記録媒体。 ３、基板に印加する高周波電源の周波数は２５０ｋＨｚ
以上であり、低周波電源の周波数は１６ｋＨｚ以上、２
５０ｋＨｚ以下であり、交流電源の周波数は５０〜１５
ｋＨｚであることを特徴とする特許請求の範囲第２項に
記載の磁気記録媒体。[Claims] 1. In a magnetic recording medium in which a magnetic recording layer made of a ferromagnetic metal thin film is formed on a nonmagnetic substrate directly or via an underlayer, an amorphous carbon protection layer is provided on the magnetic recording layer. A magnetic recording medium characterized by being provided with a film. 2. The amorphous carbon protective film was formed by a bias plasma CVD method in which a high frequency voltage, a low frequency voltage, or an alternating current voltage is applied to the substrate in an atmosphere containing hydrocarbon gas to generate a self-bias on the substrate side. The magnetic recording medium according to claim 1, which is a magnetic recording medium. 3. The frequency of the high frequency power supply applied to the board is 250kHz.
Above, the frequency of the low frequency power supply is 16kHz or more, 2
50kHz or less, and the frequency of AC power supply is 50 to 15
The magnetic recording medium according to claim 2, characterized in that the recording frequency is kHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27009887A JPH01113914A (en) | 1987-10-28 | 1987-10-28 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27009887A JPH01113914A (en) | 1987-10-28 | 1987-10-28 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01113914A true JPH01113914A (en) | 1989-05-02 |
Family
ID=17481506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27009887A Pending JPH01113914A (en) | 1987-10-28 | 1987-10-28 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01113914A (en) |
-
1987
- 1987-10-28 JP JP27009887A patent/JPH01113914A/en active Pending
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