JP7469592B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP7469592B2 JP7469592B2 JP2019220036A JP2019220036A JP7469592B2 JP 7469592 B2 JP7469592 B2 JP 7469592B2 JP 2019220036 A JP2019220036 A JP 2019220036A JP 2019220036 A JP2019220036 A JP 2019220036A JP 7469592 B2 JP7469592 B2 JP 7469592B2
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- light
- emitting device
- wiring
- electronic component
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- 230000003287 optical effect Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 description 117
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/161—Cap
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- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
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Description
第1実施形態に係る発光装置1を説明する。図1乃至図4は、発光装置1の例示的な一形態を説明するための図面である。図1は、発光装置1の斜視図である。図2は、発光装置1から蓋部材80を除いた状態の斜視図である。図3は、図2と同様の状態の上面図である。図4は、図3のIV-IV断面線における断面図である。
基部10は、他の構成要素を配置するための領域である配置領域と、配置領域を囲う側壁と、を有する。また基部は、この配置領域及び側壁を含んだ凹部を有する。凹部は、基部10の上面から下面の方向に向かって窪んでいる。ここでは、凹部の窪みの底となる面を底面と呼ぶものとする。底面は、配置領域の主要な部分となり得る。
半導体レーザ素子20は、上面視で長方形の外形を有する。また、長方形の2つの短辺のうちの一辺と交わる側面が、半導体レーザ素子20から出射される光の出射端面となる。また、半導体レーザ素子20の上面及び下面は、出射端面よりも面積が大きい。
サブマウント30は、対向する2つの接合面を有し、直方体の形状で構成される。また、サブマウント30は、対向する2つの接合面の間の距離が、他の対向する2面の間の距離よりも小さい。なお、サブマウント30の形状は直方体に限らなくてよい。サブマウント30は、例えば、窒化ケイ素、窒化アルミニウム、又は炭化ケイ素を用いて形成することができる。また、サブマウント30の上面には金属膜が設けられている。
電子部品40は、接合面と、光照射面と、を有する。また、接合面と、光照射面とは対向している。また、電子部品40は、光照射面に照射される光を制御する光制御ユニットの一部を構成する。
支持台50は、下面と、下面に対して傾斜した傾斜面51と、を有する。傾斜面51は、下面からみて垂直でも平行でもない。例えば、傾斜面51は、下面に対して45度の傾斜角を成す平面で構成される。なお、傾斜角は45度に限らなくてもよい。また、傾斜面51は、支持台50において、下面に対して傾斜する1または複数の傾斜面であって、かつ、傾斜面が複数ある場合は最も面積の大きな傾斜面である。
光学部品60は、接合面と、レンズ面61と、を有する。レンズ面61は、レンズの形状を有する面である。接合面とレンズ面61との配置関係は、接合面を下面とした場合に、レンズ面61が側面となる関係である。
配線70は、両端を接合部とする線状の形状で構成される。つまり、線状部分の両端に、他の構成要素と接合する接合部を有する。配線70は、例えば、金属のワイヤである。金属には、例えば、金、アルミニウム、銀、銅などを用いることができる。
蓋部材80は、下面と、上面と、を有し、直方体の平板形状で構成される。なお、直方体でなくてもよい。また、蓋部材80は、光を透過する透光性を有する。そのため、蓋部材80は、透光性部材ということもできる。なお、蓋の役割を有さない透光性部材を用いてもよい。
次に、発光装置1について説明する。発光装置1は、基部10、基部10に配される3つの半導体レーザ素子20、基部10に配される電子部品40、複数の配線70のうちの3つの半導体レーザ素子20を電気的に接続するための複数の第1配線71、及び、複数の配線70のうちの電子部品40を電気的に接続するための複数の第2配線72、を有する。
第2実施形態に係る発光装置2を説明する。図5乃至図9は、発光装置2の例示的な一形態を説明するための図面である。図5は、発光装置2の斜視図である。図6は、発光装置2から蓋部材80を除いた状態の斜視図である。図7は、図6と同様の状態の上面図である。図8は、図7のVIII-VIII断面線における断面図である。図9は、第2実施形態に係る電子部品40を光照射面からみた上面図である。図9に記される楕円は、半導体レーザ素子20からの主要部分の光が照射される領域を示している。また、楕円の長径を破線で記している。
図10は、第3実施形態に係る発光装置3の斜視図である。図11は、図10で示した発光装置3から蓋部材80を除いた状態の上面図である。
10、310 基部
11 底面部
12、312 側面部
13、313 第1段差部
14 第1配線領域
15 第2段差部
16 第2配線領域
20 半導体レーザ素子
30 サブマウント
40 電子部品
41、241 光照射面
242 受光領域
243 第1接合領域
244 第2接合領域
50 支持台
51 傾斜面
60 光学部品
61 レンズ面
70 配線
71 第1配線
72 第2配線
80 蓋部材
Claims (18)
- 底面を囲い前記底面から上方に伸びる側面部を有する基部と、
前記底面に配される1以上の発光素子と、
前記底面に配され、前記発光素子から出射された光が照射される電子部品と、
前記発光素子と電気的に接続される1または複数の第1配線と、
前記電子部品と電気的に接続される1または複数の第2配線と、
を有し、
前記側面部は、内側面と上面とで構成される段差部として、第1段差部と、前記第1段差部よりも前記底面からの高さが大きい第2段差部と、を有し、
前記第1段差部には、1または複数の第1配線領域が設けられ、
前記第2段差部には、1または複数の第2配線領域が設けられ、
前記第1配線の一端は、前記第1配線領域および前記第2配線領域のうちの一方に接合され、前記第2配線の一端は、前記第1配線領域および前記第2配線領域のうちの他方に接合され、
前記第1配線および前記第2配線のうち、前記第1配線領域に接合された配線の他端は、前記第2配線領域に接合された配線の他端よりも、前記底面からの高さが低い位置で接合される発光装置。 - 前記第1段差部の内側面は、前記底面と交わり、
前記第2段差部の内側面は、前記底面と交わる請求項1に記載の発光装置。 - 前記第2段差部の内側面と前記底面とが交わる部分の長さの方が、前記第2段差部の内側面と前記第1段差部の上面とが交わる部分の長さよりも大きい、請求項1または2に記載の発光装置。
- 前記基部は、前記底面を構成する底面部と、前記側面部とが一体となっている請求項1乃至3のいずれか一項に記載の発光装置。
- 前記基部は、前記底面を構成する底面部と、前記側面部と、を有し、
前記底面部は、前記側面部よりも熱伝導率が高い請求項1乃至3のいずれか一項に記載の発光装置。 - 前記電子部品には、前記発光素子から出射された主要部分の光が全て照射される請求項1乃至5のいずれか一項に記載の発光装置。
- 前記電子部品は、前記発光素子から所定の方向へと出射された前記主要部分の光の少なくとも80%以上を、前記所定の方向とは異なる方向へと進行させる請求項6に記載の発光装置。
- 前記電子部品は、MEMSまたはフォトダイオードである請求項1乃至7のいずれか一項に記載の発光装置。
- 前記底面に配され、上面視で前記発光素子と前記電子部品の間に位置し、前記発光素子から出射される光をコリメートする光学部品、をさらに有する請求項1乃至8のいずれか一項に記載の発光装置。
- 前記第1配線および前記第2配線のうち、前記第2配線領域に接合された配線の他端は、前記底面からの高さが、前記第1配線領域よりも高い位置に配置される請求項1乃至9のいずれか一項に記載の発光装置。
- 前記第1配線領域に前記1または複数の第1配線が接合され、
前記第2配線領域に前記1または複数の第2配線が接合される請求項1乃至10のいずれか一項に記載の発光装置。 - 前記1または複数の第1配線の他端は、前記発光素子の上面または前記発光素子が配されるサブマウントの上面に接合される請求項1乃至11のいずれか一項に記載の発光装置。
- 前記第2段差部の内側面は、前記発光素子及び前記電子部品を直列に挟んで対向する2つの面領域のうち、前記発光素子までの距離よりも前記電子部品までの距離の方が短い方の面領域に形成される請求項1乃至12のいずれか一項に記載の発光装置。
- 前記第1段差部の内側面は、前記発光素子及び前記電子部品を並列に挟んで対向する2つの面領域に形成される請求項13に記載の発光装置。
- 前記第1段差部の内側面は、前記発光素子及び前記電子部品を直列に挟んで対向する2つの面領域のうち、前記発光素子までの距離よりも前記電子部品までの距離の方が短い方の面領域には形成されない請求項14に記載の発光装置。
- 前記第1段差部の内側面は、前記発光素子及び前記電子部品を直列に挟んで対向する2つの面領域のうち、前記発光素子までの距離よりも前記電子部品までの距離の方が長い方の面領域に形成される請求項15に記載の発光装置。
- 前記基部の底面に配され、前記底面に対して傾いた傾斜面を有する支持台、をさらに有し、
前記電子部品は、前記支持台の傾斜面の上に配される請求項1乃至16のいずれか一項に記載の発光装置。 - 前記第2段差部よりも上方に位置する前記基部の上面に接合され、前記発光素子が配置される空間を気密封止する蓋部材、をさらに有する請求項1乃至17のいずれか一項に記載の発光装置。
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US20240055827A1 (en) | 2024-02-15 |
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