JP2019212752A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2019212752A JP2019212752A JP2018107569A JP2018107569A JP2019212752A JP 2019212752 A JP2019212752 A JP 2019212752A JP 2018107569 A JP2018107569 A JP 2018107569A JP 2018107569 A JP2018107569 A JP 2018107569A JP 2019212752 A JP2019212752 A JP 2019212752A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 238000005304 joining Methods 0.000 claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 60
- 230000017525 heat dissipation Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 25
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000005476 soldering Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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Abstract
【解決手段】 発光装置は、半導体レーザ素子と、金属を主材料とする底部と、セラミックを主材料とする枠部と、が接合された基部と、を備え、基部は、半導体レーザ素子が配される配置面と、配された半導体レーザ素子の周りを囲う枠と、半導体レーザ素子を電気的に接続するための第1及び第2電極層と、を有し、底部は、配置面を有し、枠部は、配置面と接合する接合面と、接合面と交わり配置面よりも大きい枠を形成する内側面と、接合面と交わり配置面よりも小さい枠を形成する内側面と、を有し、第2電極層は、枠部において、配置面よりも小さい枠を形成する内側面の少なくとも一部と交わる平面であって、接合面とは異なる平面上に設けられる。
【選択図】 図3
Description
図1は、第1実施形態に係る発光装置1の模式図であり、図2は発光装置1の基部の内部構造を説明するための上面図であり、図3は図1のIII-IIIを結ぶ直線における矢印方向の断面図を示す。図2においては内部構造を記すため、蓋部120、接着部130及びレンズ部材140を破線で記し、これらの部材を透過した場合に見られる部分を実線で記す。また、図が煩雑になるのを避けるため、図3で記されているワイヤ180は、図2においては省略している。
図11は、第2実施形態に係る発光装置2の断面図を示す。なお、発光装置2の外観の模式図は図1のものと変わらず、上面視における内部構造についても図2のものと変わらない。第2実施形態に係る発光装置2は、第1実施形態に係る発光装置1と比べて、基部を構成する底部の構造が異なる。特に、基板と接合する底部の接合面が第1実施形態とは異なっており、基板の接合面における絶縁部や露出部の形状をこれに対応したものにすれば、その他の点については、第1実施形態で述べた構造や材料等を採用することができる。
第1変形例の発光装置3は、第2実施形態で示した発光装置2とは他の方法で、基板との接合面における枠部と底部との間隔が、枠部との接合面における枠部と底部との間隔よりも広い発光装置を実現する。
図15は、第2変形例に係る発光装置4の断面図を示す。また図16は、第2変形例に係る底部の模式図を示す。図15に示すように、発光装置4は、底部412において、基板400との接合面が枠部411との接合面よりも小さく、側面413が傾斜を有している。このように側面413に傾斜を設けることで、基板400との接合面における枠部411と底部412との間隔を、枠部411との接合面における枠部411と底部412との間隔よりも広くすることができる。なお、第1変形例と同様に、底部412に傾斜を設ける代わりに、枠部411に設けるようにしてもよい。
100…基板
101…放熱部
102…絶縁部
103…金属膜
104…金属領域
105…絶縁領域
106…露出部
110…基部
111…枠部
112…第1電極層
113…接合面
114…第2電極層
115…内側面
116…内側面
117…内側面
118…底部
119…側面
120…蓋部
130…接着部
140…レンズ部材
150…光反射部材
160…サブマウント
170…半導体レーザ素子
180…ワイヤ
2…発光装置
200…基板
201…露出部
210…基部
211…枠部
212…接合面
213…底部
214…窪み部
215…接合面
3…発光装置
300…基板
310…基部
311…枠部
312…窪み部
313…底部
4…発光装置
400…基板
410…基部
411…枠部
412…底部
413…側面
Claims (13)
- 半導体レーザ素子と、
金属を主材料とする底部と、セラミックを主材料とし前記底部が接合された枠部と、前記半導体レーザ素子と電気的に接続される第1及び第2電極層と、を有する基部と、を備え、
前記底部は、前記半導体レーザ素子が配される配置面を有し、
前記枠部は、配された前記発光素子の周りを囲う枠を形成しており、前記配置面の一部と接合する接合面と、前記底部の周囲で前記接合面と交わり前記配置面よりも大きい枠を形成する第1内側面と、前記配置面上で前記接合面と交わり前記配置面よりも小さい枠を形成する第2内側面と、を有し、
前記第2電極層は、前記枠部において、前記第2内側面の少なくとも一部と交わる平面であって、前記接合面とは異なる平面上に設けられる発光装置。 - 前記第2内側面は、前記接合面及び前記第2電極層が設けられる平面と交わる領域と、前記接合面と交わり前記第2電極層が設けられる平面とは交わらない領域と、を有する請求項1に記載の発光装置。
- 前記基部は、前記配置面の反対側に底面を有し、
前記底部及び枠部は、それぞれ、前記基部の底面と一致する底面を有し、
前記底部の底面と、前記枠部の底面との間に隙間を有する請求項1または2に記載の発光装置。 - 前記接合面から前記基部の底面までの間に亘って、前記底部の側面と前記枠部の内側面との間に隙間を有する請求項3に記載の発光装置。
- 前記枠部は平面視で四角形であり、
前記枠部の底面の幅は、対向する二辺の幅がそれぞれ同じであり、かつ、隣り合う二辺の幅が異なる請求項3または4に記載の発光装置。 - 前記第1電極層は、前記枠部の底面に設けられ、
前記枠部の底面は平面視で多角形であり、
前記枠部の底面の幅は、前記第1電極層が設けられる辺における幅が、前記第1電極層が設けられない辺における幅よりも大きい請求項3乃至5のいずれか一項に記載の発光装置。 - 前記底部の側面と前記第1内側面との間の隙間は、前記接合面における隙間よりも前記底面における隙間の方が大きい請求項3乃至6のいずれか一項に記載の発光装置。
- 前記底部は、前記底面が前記配置面よりも小さい請求項7に記載の発光装置。
- 前記底部は、前記底面の外縁に窪み部を有する請求項8に記載の発光装置。
- 前記底部は、前記配置面から前記底面に亘って、傾斜した側面を有する請求項8または9に記載の発光装置。
- 前記枠部は、前記第1内側面により形成された前記配置面よりも大きい枠であって、前記枠部の底面と交わる位置における枠の大きさが、前記第1内側面により形成された前記配置面よりも大きい枠であって、前記接合面と交わる位置における枠よりも大きい請求項7に記載の発光装置。
- 前記底部の底面の形状が円形である請求項3乃至11のいずれか一項に記載の発光装置。
- 絶縁部と、断面視において凸形状を有した放熱部と、を有する基板を備え、
前記放熱部は、前記基部と接合する接合面において、凸形状の突出した領域が前記底部の底面の形状に応じた形状で露出した露出部を有し、
前記絶縁部は、前記露出部を囲い、
前記底部と前記露出部とが接合される請求項3乃至12のいずれか一項に記載の発光装置。
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TW202333395A (zh) | 2023-08-16 |
JP2023165876A (ja) | 2023-11-17 |
US11581458B2 (en) | 2023-02-14 |
TWI802706B (zh) | 2023-05-21 |
US20210151635A1 (en) | 2021-05-20 |
JP7469728B2 (ja) | 2024-04-17 |
CN110571642B (zh) | 2024-07-05 |
TW202005125A (zh) | 2020-01-16 |
US20190371971A1 (en) | 2019-12-05 |
JP2023052842A (ja) | 2023-04-12 |
US20230163250A1 (en) | 2023-05-25 |
CN110571642A (zh) | 2019-12-13 |
JP2024069444A (ja) | 2024-05-21 |
US10930820B2 (en) | 2021-02-23 |
JP7364970B2 (ja) | 2023-10-19 |
JP2023052858A (ja) | 2023-04-12 |
JP7518459B2 (ja) | 2024-07-18 |
JP7231809B2 (ja) | 2023-03-02 |
EP3579361A1 (en) | 2019-12-11 |
JP2024069454A (ja) | 2024-05-21 |
EP4220874A1 (en) | 2023-08-02 |
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JP7364971B2 (ja) | 2023-10-19 |
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