JP7443159B2 - 単層回路基板、多層回路基板及びそれらの製造方法 - Google Patents
単層回路基板、多層回路基板及びそれらの製造方法 Download PDFInfo
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- JP7443159B2 JP7443159B2 JP2020088788A JP2020088788A JP7443159B2 JP 7443159 B2 JP7443159 B2 JP 7443159B2 JP 2020088788 A JP2020088788 A JP 2020088788A JP 2020088788 A JP2020088788 A JP 2020088788A JP 7443159 B2 JP7443159 B2 JP 7443159B2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
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- 239000012964 benzotriazole Substances 0.000 description 2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
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- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/096—Vertically aligned vias, holes or stacked vias
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0565—Resist used only for applying catalyst, not for plating itself
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- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0769—Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure
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- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1423—Applying catalyst before etching, e.g. plating catalyst in holes before etching circuit
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/4617—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar single-sided circuit boards
Description
(例示1)
(例示2)
(例示3)
11 基材
12 基材の表面
13 導電種結晶層
131 イオン注入層
132 プラズマ堆積層
15 導体肉厚層
16 回路パターン層
161 回路領域
162 非回路領域
17 貫通穴
18 止まり穴
19 穴の壁
20 多層回路基板
21 金属箔
22 中間貼合層
23 表面貼合層
24 フォトレジスト膜
Claims (12)
- 止まり穴及び/または貫通穴を含む穴があけられた基材であって、前記穴の壁に第1導電種結晶層が形成された前記基材と、
前記基材の一部の表面上に形成された回路パターン層であって、前記基材の一部の表面に形成された、前記第1導電種結晶層と同時に形成された第2導電種結晶層を含む、前記回路パターン層と、
を含み、
前記基材の表面上に回路のネガパターンを有するフォトレジスト層と該フォトレジスト層上の第三導電種結晶層が形成されており、前記第三導電種結晶層は前記第一導電種結晶層と同時に形成され、且つ剥離液を用いて当該フォトレジスト層を溶解して前記第三導電種結晶層を前記フォトレジストとともに離脱させるように構成され、
前記第1導電種結晶層及び前記第2導電種結晶層は全て、前記基材の一部の表面の下方及び前記穴の壁の下方に注入されたイオン注入層と、前記イオン注入層の上方に付着したプラズマ堆積層とを含み、前記第三導電種結晶層は前記イオン注入層と前記プラズマ堆積層を含む、
単層回路基板。 - 前記イオン注入層は前記基材の一部の表面の下方及び前記穴の壁の下方の1-500nmの深さに位置するとともに、前記基材と安定したドーピング構造を形成している、請求項1に記載の単層回路基板。
- 前記プラズマ堆積層は、厚さが1-10000nmのプラズマ堆積層である、請求項1に記載の単層回路基板。
- 前記第1導電種結晶層及び前記第2導電種結晶層を構成する導電材料は、Ti、Cr、Ni、Cu、Ag、Au、V、Zr、Mo、Nb、及びそれらの間の合金のうちの1種または多種を含む、請求項1に記載の単層回路基板。
- 前記回路パターン層は、前記第1導電種結晶層及び前記第2導電種結晶層の上方に位置する導体肉厚層をさらに含み、前記導体肉厚層は、厚さが0.01-1000μmであり、Al、Mn、Fe、Ti、Cr、Co、Ni、Cu、Ag、Au、V、Zr、Mo、Nb、及びそれらの間の合金のうちの1種または多種によって構成される、請求項1に記載の単層回路基板。
- 表面貼合層、二層以上の単層回路基板及び各前記単層回路基板同士の間の中間貼合層、表面貼合層の順で構成され、穴があけられ、前記穴の壁に第1導電種結晶層が形成されるとともに、前記表面貼合層の一部の外面上に、前記第1導電種結晶層と同時に形成された第2導電種結晶層を有し、前記第二導電種結晶層の外表面の上方には回路パターンを有する導体肉厚層と回路のネガパターンを有するフォトレジスト層が形成され、前記第1導電種結晶層及び前記第2導電種結晶層は全て、前記穴の壁の下方及び前記表面貼合層の一部の外面の下方に注入されるイオン注入層と、前記イオン注入層の上方に付着したプラズマ堆積層とを含む、
多層回路基板。 - 前記イオン注入層は前記穴の壁の下方及び前記表面貼合層の一部の外面の下方の1-500nmの深さに位置する、請求項6に記載の多層回路基板。
- 前記プラズマ堆積層は、厚さが1-10000nmである、請求項6に記載の多層回路基板。
- 前記第1導電種結晶層及び前記第2導電種結晶層を構成する導電材料は、Ti、Cr、Ni、Cu、Ag、Au、V、Zr、Mo、Nb、及びそれらの間の合金のうちの1種または多種を含む、請求項6に記載の多層回路基板。
- 前記第1導電種結晶層及び前記第2導電種結晶層の上方に厚さが0.01-1000μmの導体肉厚層が形成されている、請求項6に記載の多層回路基板。
- 前記穴は多層回路基板を貫通する貫通穴、または前記多層回路基板の表面上に形成される止まり穴、あるいは前記単層回路基板または中間貼合層に形成される止まり穴である、請求項6に記載の多層回路基板。
- 前記中間貼合層及び前記表面貼合層は、PP、PI、PTO、PC、PSU、PES、PPS、PS、PE、PEI、PTFE、PEEK、PA、PET、PEN、LCP、PPAのうちの1種または多種を含む、請求項6に記載の多層回路基板。
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