JP7432880B2 - 光センサ及び光検出システム - Google Patents
光センサ及び光検出システム Download PDFInfo
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- JP7432880B2 JP7432880B2 JP2020558188A JP2020558188A JP7432880B2 JP 7432880 B2 JP7432880 B2 JP 7432880B2 JP 2020558188 A JP2020558188 A JP 2020558188A JP 2020558188 A JP2020558188 A JP 2020558188A JP 7432880 B2 JP7432880 B2 JP 7432880B2
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
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- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
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- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical group BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
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- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Description
本開示の項目1に係る光センサは、
光電変換層と、
光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタとを備える。
光電変換層は、ロングパスフィルタのカットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有する。
カットオン波長における光電変換層の分光感度は、第1波長における光電変換層の分光感度の0%以上50%以下である。
項目1に記載のセンサにおいて、カットオン波長における光電変換層の分光感度は、第1波長における光電変換層の分光感度の0%以上30%以下であってもよい。
項目2に記載の光センサにおいて、カットオン波長における光電変換層の分光感度は、第1波長における光電変換層の分光感度の0%以上10%以下であってもよい。
項目1から3のいずれか一項に記載の光センサにおいて、第1ピークの半値全幅は、200nm以下であってもよい。
項目4に記載の光センサでは、光電変換層に関する分光感度曲線において、第1ピークの、第1波長における分光感度の10%となる位置での幅は、200nm以下であってもよい。
項目1から5のいずれか一項に記載の光センサにおいて、
光電変換層は、第1ピークを含む複数のピークを示す分光感度特性を有し、
第1ピークは、複数のピークのうち最も長波長側に位置していてもよい。
項目6に記載の光センサにおいて、
複数のピークは、第2波長に位置する第2ピークを含み、
第2波長は、ロングパスフィルタのカットオン波長よりも短く、
第2ピークは、複数のピークのうち長波長側から2番目のピークであってもよい。
項目7に記載の光センサにおいて、第1波長とカットオン波長との差は、カットオン波長と第2波長との差よりも小さくてもよい。
項目1から8のいずれか一項に記載の光センサにおいて、光電変換層は、カーボンナノチューブを含有していてもよい。
項目1から8のいずれか一項に記載の光センサにおいて、光電変換層は、量子ドットを含有していてもよい。
項目1から10のいずれか一項に記載の光センサにおいて、第1波長は、1300nm以上1500nm以下であってもよい。
項目1から11のいずれか一項に記載の光センサにおいて、ロングパスフィルタは、吸収型の光学フィルタであってもよい。
本開示の項目13に係る、光検出システムは、
被写体に光を照射する光源と、
被写体からの光を検出する光センサと、
を備える。
光センサは、
光電変換層と、
光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと
を含む。
光電変換層は、ロングパスフィルタのカットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有する。
カットオン波長における光電変換層の分光感度は、第1波長における光電変換層の分光感度の0%以上50%以下である。
光源は、第1波長の光を出射する。
項目13に記載の光検出システムにおいて、第1ピークの半値全幅は、200nm以上300nm以下であってもよい。
項目13または14に記載の光検出システムにおいて、光源が出射する光の発光ピークの半値全幅は、第1ピークの半値全幅よりも大きくてもよい。
図1は、本開示の実施形態による光センサの画素のデバイス構造を示す。図1は、本開示の実施形態による光センサ100Aの一部を取り出してその断面を模式的に示している。光センサ100Aは、概略的には、光電変換層10を有する画素Pxと、ロングパスフィルタ60とを有する。
以下、図1を参照しながら、画素Pxのデバイス構造を説明する。図1に示すように、光センサ100Aは、複数の画素Pxを含む。複数の画素Pxは、例えば二次元に配置されることにより、撮像領域を形成する。ロングパスフィルタ60は、複数の画素Pxにわたって複数の画素Pxの光の入射側に配置される。なお、本開示の実施形態による光センサにおける画素Pxの数および配置は、図1に示す例に限定されず任意である。画素Pxの配置が一次元であれば、光センサ100Aを例えばラインセンサとして利用できる。光センサが少なくとも1つの画素Pxを有していれば、その光センサを光の検出に利用することができる。
図2は、光センサ100Aの例示的な回路構成を模式的に示す。光センサ100Aは、上述の画素Pxの例えば二次元配列をその一部に含む。図2では、図面が過度に複雑になることを避けるために、画素Pxの二次元配列から4つの画素Pxを取り出して示している。ここでは、4つの画素Pxは、2行2列に配置されている。
次に、光電変換層10の材料の典型例を詳細に説明する。光電変換層10を構成する光電変換材料としては、カーボンナノチューブ、あるいは、量子閉じ込め効果を持つ量子ナノ構造を有する材料を用いることができる。
図17は、本開示の実施形態による光センサをその一部に含むカメラシステムの例示的な構成を模式的に示す。図17に示すカメラシステム200Aは、レンズ光学系210と、撮像部100Lと、レンズ光学系210および撮像部100Lの間に位置するロングパスフィルタ60と、システムコントローラ230と、信号処理回路220とを有する。撮像部100Lは、例えば上述の光電変換部10Lおよび検出回路30Lを含む。すなわち、カメラシステム200Aは、光センサ100Aをその一部に含んでいる。光センサ100Aに代えて、図13を参照しながら説明した光センサ100Bを適用してもよい。
10L 光電変換部
11 画素電極
12 対向電極
30 半導体基板
30L 検出回路
32 信号検出トランジスタ
34 アドレストランジスタ
36 リセットトランジスタ
37 垂直走査回路
40 電源線
42 垂直信号線
50 絶縁層
52 導電構造
60 ロングパスフィルタ
62 ショートパスフィルタ
70 電圧供給回路
72 リセット電圧供給回路
100、100A、100B 光センサ
100L 撮像部
200A、200B カメラシステム
220 信号処理回路
230 システムコントローラ
240 光源
300 被写体
Px、Px1、Px2 画素
Claims (17)
- 光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと、
を備え、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、前記第1ピークを含む複数のピークを示す分光感度特性を有し、
前記第1ピークは、前記複数のピークのうち最も長波長側に位置する、
光センサ。 - 前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上30%以下である、
請求項1に記載の光センサ。 - 前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上10%以下である、
請求項2に記載の光センサ。 - 前記第1ピークの半値全幅は、200nm以下である、
請求項1から3のいずれか一項に記載の光センサ。 - 前記光電変換層に関する分光感度曲線において、前記第1ピークの、前記第1波長における分光感度の10%となる位置での幅は、200nm以下である、
請求項4に記載の光センサ。 - 前記複数のピークは、第2波長に位置する第2ピークを含み、
前記第2波長は、前記ロングパスフィルタの前記カットオン波長よりも短く、
前記第2ピークは、前記複数のピークのうち長波長側から2番目のピークである、
請求項1に記載の光センサ。 - 前記第1波長と前記カットオン波長との差は、前記カットオン波長と前記第2波長との差よりも小さい 、
請求項6に記載の光センサ。 - 光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと、
を備え、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、カーボンナノチューブを含有する、
光センサ。 - 前記光電変換層は、量子ドットを含有する、
請求項1から7のいずれか一項に記載の光センサ。 - 前記第1波長は、1300nm以上1500nm以下である、
請求項1から9のいずれか一項に記載の光センサ。 - 前記ロングパスフィルタは、吸収型の光学フィルタである、
請求項1から10のいずれか一項に記載の光センサ。 - 被写体に光を照射する光源と、
前記被写体からの光を検出する光センサと、
を備え、
前記光センサは、
光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと
を含み、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、前記第1ピークを含む複数のピークを示す分光感度特性を有し、
前記第1ピークは、前記複数のピークのうち最も長波長側に位置し、
前記光源は、前記第1波長の光を出射する、
光検出システム。 - 前記第1ピークの半値全幅は、200nm以上300nm以下である、
請求項12に記載の光検出システム。 - 前記光源が出射する光の発光ピークの半値全幅は、前記第1ピークの半値全幅よりも大きい、
請求項12または13に記載の光検出システム。 - 被写体に光を照射する光源と、
前記被写体からの光を検出する光センサと、
を備え、
前記光センサは、
光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと
を含み、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、カーボンナノチューブを含有し、
前記光源は、前記第1波長の光を出射する、
光検出システム。 - 光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと、
を備え、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、前記第1ピークを含む複数のピークを示す分光感度特性を有し、
前記複数のピークは、第2波長に位置する第2ピークを含み、
前記第2波長は、前記ロングパスフィルタの前記カットオン波長よりも短い、
光センサ。 - 被写体に光を照射する光源と、
前記被写体からの光を検出する光センサと、
を備え、
前記光センサは、
光電変換層と、
前記光電変換層の上方に配置され、入射した光のうちカットオン波長以上の波長を有する成分を選択的に透過させるロングパスフィルタと
を含み、
前記光電変換層は、前記ロングパスフィルタの前記カットオン波長よりも長い第1波長に第1ピークを示す分光感度特性を有し、
前記カットオン波長における前記光電変換層の分光感度は、前記第1波長における前記光電変換層の分光感度の0%以上50%以下であり、
前記光電変換層は、前記第1ピークを含む複数のピークを示す分光感度特性を有し、
前記複数のピークは、第2波長に位置する第2ピークを含み、
前記第2波長は、前記ロングパスフィルタの前記カットオン波長よりも短く、
前記光源は、前記第1波長の光を出射する、
光検出システム。
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