JP7370270B2 - 基板保持機構及び基板処理装置 - Google Patents
基板保持機構及び基板処理装置 Download PDFInfo
- Publication number
- JP7370270B2 JP7370270B2 JP2020020124A JP2020020124A JP7370270B2 JP 7370270 B2 JP7370270 B2 JP 7370270B2 JP 2020020124 A JP2020020124 A JP 2020020124A JP 2020020124 A JP2020020124 A JP 2020020124A JP 7370270 B2 JP7370270 B2 JP 7370270B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate holding
- mounting table
- substrate
- wafer
- holding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
図1~図5を参照し、実施形態の基板処理装置について、基板である半導体ウエハ(以下「ウエハW」という。)に原子層堆積(ALD:Atomic Layer Deposition)により膜を形成する成膜装置を例示して説明する。図1は、実施形態の成膜装置の一例を示す縦断面図である。図2は、実施形態の成膜装置の一例を示す横断面図である。図3は、実施形態の成膜装置に設けられる回転テーブルの概略斜視図である。
図6を参照し、成膜装置1に用いられる基板保持機構100の一例について説明する。図6は、基板保持機構100の一例を示す断面図であり、載置台3の周縁部に設けられる3個の基板保持機構100のうちの1個を示す。なお、残りの2個の基板保持機構100についても同様の構成であってよい。
図7~図10を参照し、基板保持機構100の動作の一例について説明する。図7~図10は、基板保持機構100の動作の一例を示す図である。
図11及び図12を参照し、基板保持機構100による効果を確認した実施例について説明する。図11は、実施例の条件を説明するための図である。図12は、実施例の結果を説明するための図である。
実施例1では、載置台3の上面にウエハWを載置し、前述の基板保持機構100によりウエハWを保持した状態で、回転テーブル2を240rpmの回転速度で回転させると共に、載置台3を回転テーブル2の回転方向と同じ方向に所定の回転速度で回転させた。すなわち、実施例1では、ウエハWを、240rpmの回転速度で公転させると共に、公転方向と同じ方向に所定の回転速度で自転させた。所定の条件は、図11に示されるように、載置台3が停止している状態から2rpmの回転速度まで徐々に回転速度を高め、2rpmの回転速度で5分間させた後、徐々に回転速度を低下させて停止させるサイクルを10回繰り返す条件である。また、載置台3に対してウエハWが回転した角度(自転角度)を測定した。
実施例2では、載置台3の上面にウエハWを載置し、前述の基板保持機構100によりウエハWを保持した状態で、回転テーブル2を240rpmの回転速度で回転させると共に、載置台3を回転テーブル2の回転方向と逆の方向に所定の回転速度で回転させた。すなわち、実施例2では、ウエハWを、240rpmの回転速度で公転させると共に、公転方向と逆の方向に所定の回転速度で自転させた。所定の条件は、図11に示されるように、載置台3が停止している状態から2rpmの回転速度まで徐々に回転速度を高め、2rpmの回転速度で5分間させた後、徐々に回転速度を低下させて停止させるサイクルを10回繰り返す条件である。また、載置台3に対してウエハWが回転した角度(自転角度)を測定した。
比較例1では、載置台3の上面にウエハWを載置し、基板保持機構100によるウエハWの保持を行うことなく、実施例1と同じ条件で回転テーブル2及び載置台3を回転させた。また、載置台3に対してウエハWが回転した角度(自転角度)を測定した。
比較例2では、載置台3の上面にウエハWを載置し、基板保持機構100によるウエハWの保持を行うことなく、実施例2と同じ条件で回転テーブル2及び載置台3を回転させた。また、載置台3に対してウエハWが回転した角度(自転角度)を測定した。
図12に示されるように、実施例1ではウエハWの自転角度が6deg.であるのに対し、比較例1ではウエハWの自転角度が156deg.であることが分かる。この結果から、載置台3の上面に載置されたウエハWを基板保持機構100により保持することで、載置台3の上面に載置されたウエハWを基板保持機構100により保持しない場合と比較して、ウエハ自身の自転角度を4%以下に抑制できると言える。
2 回転テーブル
3 載置台
100 基板保持機構
110 基板保持部材
111 鉛直部
112 水平部
120 回転軸
130 バネ
140 バネ支持部
150 押圧部材
W ウエハ
Ws 側面部
Claims (8)
- 回転テーブルに対して回転可能な載置台の上に載置される基板を保持する基板保持機構であって、
前記載置台の周縁部に設けられる基板保持部材であり、前記基板が載置される面よりも下方に配置される回転軸に固定保持され、前記載置台の上に載置された前記基板の側面部に接触可能な基板保持部材と、
一端が前記基板保持部材における前記回転軸よりも前記載置台の中心側に固定され、他端が前記基板保持部材から前記載置台の中心側に離間した位置であって、前記回転軸よりも下方の位置に固定される付勢部材と、
前記基板保持部材の前記付勢部材の前記一端が固定された部位を上方に押圧する押圧部材と、
を有し、
前記基板保持部材は、略鉛直方向に伸びる鉛直部と、前記鉛直部から屈曲して略水平方向に伸びる水平部とを含む略L字形状を有し、
前記回転軸は前記屈曲する部位に設けられ、
前記基板の側面部と接触する位置は前記鉛直部に設けられ、
前記付勢部材の一端が固定される位置は前記水平部に設けられる、
基板保持機構。 - 前記回転軸は、前記載置台の中心に前記基板が載置されたときの前記基板の側面部よりも外側に位置する、
請求項1に記載の基板保持機構。 - 前記付勢部材の一端が、前記回転軸と前記付勢部材の他端とを結ぶ線分上にあるとき、前記鉛直部は鉛直方向に対して前記載置台の中心側に傾斜する、
請求項1又は2に記載の基板保持機構。 - 前記押圧部材は、前記水平部を下方から押圧可能に構成される、
請求項1乃至3のいずれか一項に記載の基板保持機構。 - 前記付勢部材は、バネである、
請求項1乃至4のいずれか一項に記載の基板保持機構。 - 前記基板保持部材、前記付勢部材及び前記押圧部材は、前記載置台の周縁部に複数個設けられる、
請求項1乃至5のいずれか一項に記載の基板保持機構。 - 前記基板保持部材、前記付勢部材及び前記押圧部材は、前記載置台の周縁部に少なくとも3個設けられる、
請求項1乃至6のいずれか一項に記載の基板保持機構。 - 真空容器内に設けられる回転テーブルと、
前記回転テーブルに対して回転可能であり、上面に基板を載置する載置台と、
前記載置台の上に載置される前記基板を保持する基板保持機構と、
を備え、
前記基板保持機構は、
前記載置台の周縁部に設けられる基板保持部材であり、前記基板が載置される面よりも下方に配置される回転軸に固定保持され、前記載置台の上に載置された前記基板の側面部に接触可能な基板保持部材と、
一端が前記基板保持部材における前記回転軸よりも前記載置台の中心側に固定され、他端が前記基板保持部材から前記載置台の中心側に離間した位置であって、前記回転軸よりも下方の位置に固定される付勢部材と、
前記基板保持部材の前記付勢部材の前記一端が固定された部位を上方に押圧する押圧部材と、
を有し、
前記基板保持部材は、略鉛直方向に伸びる鉛直部と、前記鉛直部から屈曲して略水平方向に伸びる水平部とを含む略L字形状を有し、
前記回転軸は前記屈曲する部位に設けられ、
前記基板の側面部と接触する位置は前記鉛直部に設けられ、
前記付勢部材の一端が固定される位置は前記水平部に設けられる、
基板処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020020124A JP7370270B2 (ja) | 2020-02-07 | 2020-02-07 | 基板保持機構及び基板処理装置 |
US17/148,963 US11664201B2 (en) | 2020-02-07 | 2021-01-14 | Substrate holding mechanism and substrate processing apparatus |
KR1020210011144A KR20210101138A (ko) | 2020-02-07 | 2021-01-27 | 기판 보유 지지 기구 및 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020020124A JP7370270B2 (ja) | 2020-02-07 | 2020-02-07 | 基板保持機構及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021125652A JP2021125652A (ja) | 2021-08-30 |
JP7370270B2 true JP7370270B2 (ja) | 2023-10-27 |
Family
ID=77178274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020020124A Active JP7370270B2 (ja) | 2020-02-07 | 2020-02-07 | 基板保持機構及び基板処理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11664201B2 (ja) |
JP (1) | JP7370270B2 (ja) |
KR (1) | KR20210101138A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7471170B2 (ja) * | 2020-08-03 | 2024-04-19 | 東京エレクトロン株式会社 | 基板処理方法、及び基板処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016072428A (ja) | 2014-09-30 | 2016-05-09 | 株式会社ディスコ | ウエーハの保持方法 |
JP2016152264A (ja) | 2015-02-16 | 2016-08-22 | 東京エレクトロン株式会社 | 基板保持機構及びこれを用いた基板処理装置 |
JP2019204844A (ja) | 2018-05-22 | 2019-11-28 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5775000A (en) * | 1996-05-13 | 1998-07-07 | Ebara Corporation | Substrate gripper device for spin drying |
US6827092B1 (en) * | 2000-12-22 | 2004-12-07 | Lam Research Corporation | Wafer backside plate for use in a spin, rinse, and dry module and methods for making and implementing the same |
KR100897431B1 (ko) * | 2001-11-27 | 2009-05-14 | 도쿄엘렉트론가부시키가이샤 | 액처리장치 및 액처리방법 |
JP6330623B2 (ja) * | 2014-10-31 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP6330630B2 (ja) | 2014-11-13 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置 |
-
2020
- 2020-02-07 JP JP2020020124A patent/JP7370270B2/ja active Active
-
2021
- 2021-01-14 US US17/148,963 patent/US11664201B2/en active Active
- 2021-01-27 KR KR1020210011144A patent/KR20210101138A/ko active Search and Examination
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016072428A (ja) | 2014-09-30 | 2016-05-09 | 株式会社ディスコ | ウエーハの保持方法 |
JP2016152264A (ja) | 2015-02-16 | 2016-08-22 | 東京エレクトロン株式会社 | 基板保持機構及びこれを用いた基板処理装置 |
JP2019204844A (ja) | 2018-05-22 | 2019-11-28 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021125652A (ja) | 2021-08-30 |
US20210249235A1 (en) | 2021-08-12 |
US11664201B2 (en) | 2023-05-30 |
KR20210101138A (ko) | 2021-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI694516B (zh) | 基板處理裝置 | |
KR101928134B1 (ko) | 성막 장치 | |
CN109943828B (zh) | 成膜装置 | |
JP5068780B2 (ja) | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 | |
JP6708167B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP7296732B2 (ja) | 基板処理方法 | |
KR20180127195A (ko) | 기판 처리 장치 | |
JP6749225B2 (ja) | クリーニング方法 | |
JP7370270B2 (ja) | 基板保持機構及び基板処理装置 | |
KR102472706B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JP2004115872A (ja) | 基板処理装置および基板処理方法 | |
US11702746B2 (en) | Magnetic drive apparatus and magnetizing method | |
JP2023049756A (ja) | 基板保持機構及びこれを用いた基板処理装置、並びに基板交換方法 | |
JP6481363B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
US20240209507A1 (en) | Film forming apparatus | |
JP2006049449A (ja) | 基板処理装置 | |
JP2022108645A (ja) | 成膜装置及び成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230710 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230718 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230904 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230919 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231017 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7370270 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |