JP6749225B2 - クリーニング方法 - Google Patents
クリーニング方法 Download PDFInfo
- Publication number
- JP6749225B2 JP6749225B2 JP2016237074A JP2016237074A JP6749225B2 JP 6749225 B2 JP6749225 B2 JP 6749225B2 JP 2016237074 A JP2016237074 A JP 2016237074A JP 2016237074 A JP2016237074 A JP 2016237074A JP 6749225 B2 JP6749225 B2 JP 6749225B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- gas
- rotary table
- cleaning step
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/34—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 containing fluorides or complex fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
まず、本発明の実施形態に係るクリーニング方法が適用可能な成膜装置の一例について説明する。図1は、本発明の実施形態に係る成膜装置の概略断面図である。図2は、図1の成膜装置の真空容器内の構成を示す概略斜視図である。図3は、図1の成膜装置の真空容器内の構成を示す概略平面図である。なお、図2及び図3では、説明の便宜上、天板の図示を省略している。
次に、本発明の実施形態に係る成膜装置による成膜方法(成膜工程)について説明する。以下では、シリコン酸化膜を成膜する場合を例に挙げて説明する。
次に、本発明の実施形態に係るクリーニング方法について説明する。本発明の実施形態に係るクリーニング方法は、回転テーブル2の上下方向の位置を異ならせて行う2つのクリーニング工程(第1のクリーニング工程及び第2のクリーニング工程)を含む。第1のクリーニング工程は、真空容器1内において回転テーブル2を、第1のクリーニング位置において回転させた状態で、回転テーブル2の基板載置面の上方からクリーニングガスを供給する工程である。第2のクリーニング工程は、回転テーブル2を、第1のクリーニング位置よりも下方である第2のクリーニング位置において回転させた状態で、回転テーブル2の基板載置面の上方からクリーニングガスを供給する工程である。第1のクリーニング工程及び第2のクリーニング工程で使用するクリーニングガスは、同一のガスであってもよく、異なるガスであってもよい。
2 回転テーブル
2a 凹部
5 突出部
31 反応ガスノズル
32 反応ガスノズル
33 クリーニングガスノズル
51 分離ガス供給管
C 中心領域
D 分離領域
P1 第1の処理領域
P2 第2の処理領域
W ウエハ
Claims (10)
- 処理室内において基板を上面に載置可能な回転テーブルと、回転テーブルの上方に回転テーブルの回転方向に沿って互いに離間して配置された第1の処理領域及び第2の処理領域と、第1の処理領域及び第2の処理領域との間に配置された分離領域と、が設けられ、前記分離領域に前記処理室内の天井面の側から下方に向かって突出する突出部が設けられて前記第1の処理領域及び前記第2の処理領域よりも低い天井面が形成され、前記第1の処理領域及び/又は前記第2の処理領域にクリーニングガス、前記分離領域にパージガスが供給可能であり、前記第1の処理領域と前記第2の処理領域との雰囲気を分離するために前記処理室内の中心部に位置し、前記回転テーブルの基板載置面に分離ガスを供給する分離ガス供給管が設けられた中心領域を有する成膜装置を用いたクリーニング方法であって、
前記回転テーブルを、第1のクリーニング位置において回転させた状態で、前記回転テーブルの基板載置面の上方からクリーニングガスを供給する第1のクリーニング工程と、
前記回転テーブルを、前記第1のクリーニング位置よりも下方である第2のクリーニング位置において回転させた状態で、前記回転テーブルの基板載置面の上方から前記クリーニングガスを供給する第2のクリーニング工程と、
を含み、
前記第2のクリーニング工程は、前記中心領域から供給される分離ガスの流量を前記第1のクリーニング工程よりも小さくした状態で行う工程である、
クリーニング方法。 - 前記第1の処理領域に第1の反応ガス、前記第2の処理領域に第2の反応ガス、前記分離領域にパージガスを供給した状態で前記回転テーブルを回転させることにより、前記第1の反応ガスと前記第2の反応ガスとの反応生成物を基板に成膜する成膜工程を有し、
前記成膜工程を繰り返すことにより、前記回転テーブルの上面に所定の膜厚の膜が成膜されたときに前記第1のクリーニング工程及び前記第2のクリーニング工程を行う、
請求項1に記載のクリーニング方法。 - 前記所定の膜は、シリコン酸化膜である、
請求項2に記載のクリーニング方法。 - 前記第1のクリーニング工程の後、前記第2のクリーニング工程を行う、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記第1のクリーニング工程の後であって、前記第2のクリーニング工程の前に、前記回転テーブルを、前記第1のクリーニング位置から前記第2のクリーニング位置に移動させながら回転させた状態で、前記回転テーブルの基板載置面の上方から前記クリーニングガスを供給する第3のクリーニング工程を含む、
請求項4に記載のクリーニング方法。 - 前記第2のクリーニング工程の後、前記第1のクリーニング工程を行う、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記第2のクリーニング工程の後であって、前記第1のクリーニング工程の前に、前記回転テーブルを、前記第2のクリーニング位置から前記第1のクリーニング位置に移動させながら回転させた状態で、前記回転テーブルの基板載置面の上方から前記クリーニングガスを供給する第4のクリーニング工程を含む、
請求項6に記載のクリーニング方法。 - 前記第1のクリーニング工程と前記第2のクリーニング工程とを交互に繰り返す、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記第1のクリーニング工程の後に、前記回転テーブルを、前記第1のクリーニング位置から前記第2のクリーニング位置に移動させながら回転させた状態で、前記回転テーブルの基板載置面の上方から前記クリーニングガスを供給する第3のクリーニング工程と、
前記第2のクリーニング工程の後に、前記回転テーブルを、前記第2のクリーニング位置から前記第1のクリーニング位置に移動させながら回転させた状態で、前記回転テーブルの基板載置面の上方から前記クリーニングガスを供給する第4のクリーニング工程と、
を含み、
前記第1のクリーニング工程、前記第3のクリーニング工程、前記第2のクリーニング工程及び前記第4のクリーニング工程をこの順番に繰り返す、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記クリーニングガスは、ClF3ガスを含む、
請求項1乃至9のいずれか一項に記載のクリーニング方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016237074A JP6749225B2 (ja) | 2016-12-06 | 2016-12-06 | クリーニング方法 |
US15/825,611 US10648076B2 (en) | 2016-12-06 | 2017-11-29 | Cleaning method and film deposition apparatus executing the cleaning method for uniformly cleaning rotary table |
KR1020170164222A KR102170612B1 (ko) | 2016-12-06 | 2017-12-01 | 클리닝 방법 |
TW106142334A TWI695442B (zh) | 2016-12-06 | 2017-12-04 | 清潔方法 |
CN201711277807.XA CN108149221B (zh) | 2016-12-06 | 2017-12-06 | 清洁方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016237074A JP6749225B2 (ja) | 2016-12-06 | 2016-12-06 | クリーニング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018093121A JP2018093121A (ja) | 2018-06-14 |
JP6749225B2 true JP6749225B2 (ja) | 2020-09-02 |
Family
ID=62240866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016237074A Active JP6749225B2 (ja) | 2016-12-06 | 2016-12-06 | クリーニング方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10648076B2 (ja) |
JP (1) | JP6749225B2 (ja) |
KR (1) | KR102170612B1 (ja) |
CN (1) | CN108149221B (ja) |
TW (1) | TWI695442B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6956660B2 (ja) * | 2018-03-19 | 2021-11-02 | 東京エレクトロン株式会社 | クリーニング方法及び成膜装置 |
JP7042689B2 (ja) * | 2018-05-23 | 2022-03-28 | 東京エレクトロン株式会社 | サセプタのドライクリーニング方法及び基板処理装置 |
JP7038618B2 (ja) * | 2018-07-12 | 2022-03-18 | 東京エレクトロン株式会社 | クリーニング方法及び基板処理装置 |
KR102081706B1 (ko) * | 2018-07-18 | 2020-02-27 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
KR102620219B1 (ko) | 2018-11-02 | 2024-01-02 | 삼성전자주식회사 | 기판 처리 방법 및 기판 처리 장치 |
CN113637950A (zh) * | 2021-08-17 | 2021-11-12 | 浙江海顺新材料有限公司 | 一种超薄铝层pet镀铝膜的生产装置及其生产方法 |
CN114242626B (zh) * | 2021-12-21 | 2022-04-29 | 智程半导体设备科技(昆山)有限公司 | 一种干法晶圆片清洗设备 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
JP3274389B2 (ja) * | 1996-08-12 | 2002-04-15 | 株式会社東芝 | 半導体基板の洗浄方法 |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
JPH11283950A (ja) * | 1998-03-30 | 1999-10-15 | Ebara Corp | 基板洗浄装置 |
JP2002009035A (ja) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | 基板洗浄方法及び基板洗浄装置 |
US20030216041A1 (en) * | 2002-05-08 | 2003-11-20 | Herring Robert B. | In-situ thermal chamber cleaning |
US20040093679A1 (en) * | 2002-11-15 | 2004-05-20 | Jay Kukoff | Scrubbing sponge with indicia and method of making same |
US6919101B2 (en) * | 2003-02-04 | 2005-07-19 | Tegal Corporation | Method to deposit an impermeable film on porous low-k dielectric film |
US20090047447A1 (en) * | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
JP2007053154A (ja) * | 2005-08-16 | 2007-03-01 | Pre-Tech Co Ltd | マスク基板用の洗浄装置及びそれを用いたマスク基板の洗浄方法 |
KR100753158B1 (ko) | 2006-06-19 | 2007-08-30 | 삼성전자주식회사 | 공정 챔버의 세정 방법 |
KR20100049599A (ko) * | 2007-07-17 | 2010-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 원격 플라즈마 소오스에 의한 세정률 개선 |
EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
KR101504138B1 (ko) * | 2008-11-19 | 2015-03-19 | 주식회사 원익아이피에스 | 박막 증착장치 및 이 장치의 세정방법 |
JP5031013B2 (ja) | 2008-11-19 | 2012-09-19 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体 |
JP2010251705A (ja) * | 2009-03-24 | 2010-11-04 | Nuflare Technology Inc | 成膜装置および成膜方法 |
US20120000490A1 (en) | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for enhanced processing chamber cleaning |
JP5632860B2 (ja) * | 2012-01-05 | 2014-11-26 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体 |
JP2013201317A (ja) * | 2012-03-26 | 2013-10-03 | Toyota Central R&D Labs Inc | 表面処理装置 |
JP6095172B2 (ja) * | 2012-03-30 | 2017-03-15 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
JP5857896B2 (ja) * | 2012-07-06 | 2016-02-10 | 東京エレクトロン株式会社 | 成膜装置の運転方法及び成膜装置 |
US20140069459A1 (en) | 2012-09-09 | 2014-03-13 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition chambers |
JP6086763B2 (ja) * | 2013-03-11 | 2017-03-01 | ファスフォードテクノロジ株式会社 | コレットクリーニング方法及びそれを用いたダイボンダ |
NL2014497B1 (en) * | 2015-03-20 | 2017-01-19 | Asm Int Nv | Method for cleaning deposition apparatus. |
-
2016
- 2016-12-06 JP JP2016237074A patent/JP6749225B2/ja active Active
-
2017
- 2017-11-29 US US15/825,611 patent/US10648076B2/en active Active
- 2017-12-01 KR KR1020170164222A patent/KR102170612B1/ko active IP Right Grant
- 2017-12-04 TW TW106142334A patent/TWI695442B/zh active
- 2017-12-06 CN CN201711277807.XA patent/CN108149221B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108149221B (zh) | 2021-06-25 |
US20180155829A1 (en) | 2018-06-07 |
JP2018093121A (ja) | 2018-06-14 |
KR102170612B1 (ko) | 2020-10-27 |
CN108149221A (zh) | 2018-06-12 |
TW201832306A (zh) | 2018-09-01 |
TWI695442B (zh) | 2020-06-01 |
US10648076B2 (en) | 2020-05-12 |
KR20180064983A (ko) | 2018-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6749225B2 (ja) | クリーニング方法 | |
US10475641B2 (en) | Substrate processing apparatus | |
JP5107185B2 (ja) | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 | |
JP6303592B2 (ja) | 基板処理装置 | |
TWI514507B (zh) | 基板處理裝置 | |
JP4668286B2 (ja) | 処理装置 | |
JP5056735B2 (ja) | 成膜装置 | |
TWI506159B (zh) | 成膜裝置 | |
TWI579954B (zh) | 基板處理裝置及基板處理方法 | |
JP5173684B2 (ja) | 成膜装置、成膜方法、並びにこの成膜方法を成膜装置に実施させるプログラム及びこれを記憶するコンピュータ可読記憶媒体 | |
JP6478847B2 (ja) | 基板処理装置 | |
JP5093078B2 (ja) | 成膜装置 | |
US11214864B2 (en) | Method for reducing metal contamination and film deposition apparatus | |
JP6747220B2 (ja) | 基板処理装置及び基板処理方法 | |
JP2012004408A (ja) | 支持体構造及び処理装置 | |
KR102491924B1 (ko) | 성막 방법 및 성막 장치 | |
JP7382836B2 (ja) | 基板処理装置及び回転駆動方法 | |
JP2008034858A (ja) | 処理装置 | |
JP5708843B2 (ja) | 支持体構造及び処理装置 | |
JP6096588B2 (ja) | 基板処理装置及び基板処理方法 | |
JP3221102U (ja) | シール構造及び処理装置 | |
JP2004011005A (ja) | 処理装置および処理方法 | |
JP6906439B2 (ja) | 成膜方法 | |
JP6739370B2 (ja) | 基板処理装置 | |
JP2023031752A (ja) | 基板に成膜処理を行う装置、及び基板に成膜処理を行う方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190520 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200424 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200714 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200811 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6749225 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |